Showing 1–19 of 19 results for author: Soref, R

Remote Electric Powering by Germanium Photovoltaic Conversion of an Erbium-Fiber Laser Beam

Authors: Richard Soref, Francesco De Leonardis, Oussama Moutanabbir, Gerard Daligou

Abstract: The commercially available 4000-Watt continuous-wave Erbium-doped-fiber laser, emitting at the 1567-nanometer wavelength where the atmosphere has high transmission, provides an opportunity for harvesting electric power at remote off the grid locations using a multi-module photovoltaic receiver panel. This paper proposes a 32-element monocrystalline thick-layer Germanium photovoltaic panel for effi… ▽ More The commercially available 4000-Watt continuous-wave Erbium-doped-fiber laser, emitting at the 1567-nanometer wavelength where the atmosphere has high transmission, provides an opportunity for harvesting electric power at remote off the grid locations using a multi-module photovoltaic receiver panel. This paper proposes a 32-element monocrystalline thick-layer Germanium photovoltaic panel for efficient harvesting of a collimated 1.13-meter-diameter beam.The 0.78-meter squared PV panel is constructed from commercial Ge wafers. For incident continuous-wave laser-beam power in the 4000 to 10000 Watt range, our thermal and electrical and infrared simulations predict 660 to 1510 Watts of electrical output at panel temperatures of 350 to 423 Kelvin. △ Less

Submitted 2 July, 2024; v1 submitted 7 June, 2024; originally announced July 2024.

Comments: 11 pages, 6 figures

Design of an ultra-compact, energy-efficient non-volatile photonic switch based on phase change materials

Authors: Khoi Phuong Dao, Juejun Hu, Richard Soref

Abstract: The on-chip photonic switch is a critical building block for photonic integrated circuits (PICs) and the integration of phase change materials (PCMs) enables non-volatile switch designs that are compact, low-loss, and energy-efficient. Existing switch designs based on these materials typically rely on weak evanescent field interactions, resulting in devices with a large footprint and high energy c… ▽ More The on-chip photonic switch is a critical building block for photonic integrated circuits (PICs) and the integration of phase change materials (PCMs) enables non-volatile switch designs that are compact, low-loss, and energy-efficient. Existing switch designs based on these materials typically rely on weak evanescent field interactions, resulting in devices with a large footprint and high energy consumption. Here we present a compact non-volatile 2 by 2 switch design leveraging optical concentration in slot waveguide modes to significantly enhance interactions of light with PCMs, thereby realizing a compact, efficient photonic switch. To further improve the device's energy efficiency, we introduce an integrated single-layer graphene heater for ultrafast electrothermal switching of the PCM. Computational simulations demonstrate a 2 by 2 switch with crosstalk (CT) down to -24 dB at 1550 nm wavelength and more than 55 nm 0.3 dB insertion loss (IL) bandwidth. The proposed photonic switch architecture can constitute the cornerstone for next-generation high-performance reconfigurable photonic circuits. △ Less

Submitted 13 May, 2024; originally announced May 2024.

Room-temperature photonic quantum computing in integrated silicon photonics with germanium-silicon single-photon avalanche diodes

Authors: Neil Na, Chou-Yun Hsu, Erik Chen, Richard Soref

Abstract: Most, if not all, photonic quantum computing (PQC) relies upon superconducting nanowire single-photon detectors (SNSPDs) based on Nb operated at a temperature < 4 K. This paper proposes and analyzes 300 K Si-waveguide-integrated GeSi single-photon avalanche diodes (SPADs) based on the recently demonstrated normal-incidence GeSi SPADs operated at room temperature, and shows that their performance i… ▽ More Most, if not all, photonic quantum computing (PQC) relies upon superconducting nanowire single-photon detectors (SNSPDs) based on Nb operated at a temperature < 4 K. This paper proposes and analyzes 300 K Si-waveguide-integrated GeSi single-photon avalanche diodes (SPADs) based on the recently demonstrated normal-incidence GeSi SPADs operated at room temperature, and shows that their performance is competitive against that of SNSPDs in a series of metrics for PQC with a reasonable time-gating window to resolve the issue of dark-count rate (DCR). These GeSi SPADs become photon-number-resolving avalanche diodes (PNRADs) by deploying a spatially multiplexed M-fold-waveguide array of M SPADs. Using on-chip waveguided spontaneous four-wave mixing (SFWM) sources and waveguided field-programmable interferometer mesh (FPIM) circuits, together with the high-metric SPADs and PNRADs, high-performance quantum computing at room temperature is predicted for this PQC architecture. △ Less

Submitted 7 May, 2024; originally announced May 2024.

Directed High-Energy Infrared Laser Beams for Photovoltaic Generation of Electric Power at Remote Locations

Authors: Richard Soref, Francesco De Leonardis, Gerard Daligou, Oussama Moutanabbir

Abstract: Transferring energy without transferring mass is a powerful paradigm to address the challenges faced when the access to, or the deployment of, the infrastructure for energy conversion is locally impossible or impractical. Laser beaming holds the promise of effectively implementing this paradigm. With this perspective, this work evaluates the optical-to-electrical power conversion that is created w… ▽ More Transferring energy without transferring mass is a powerful paradigm to address the challenges faced when the access to, or the deployment of, the infrastructure for energy conversion is locally impossible or impractical. Laser beaming holds the promise of effectively implementing this paradigm. With this perspective, this work evaluates the optical-to-electrical power conversion that is created when a collimated laser beam illuminates a silicon photovoltaic solar cell that is located kilometers away from the laser. The laser is a CW high-energy Yb-doped fiber laser emitting at a center wavelength of 1075 nm with ~1 m2 of effective beam area. For 20 kW illumination of a solar panel having 0.6 m2 of area, optical simulations and thermal simulations indicate electrical output power of 3000 Watts at a panel temperature of 550 K. Our investigations show that thermo-radiative cells are rather inefficient. In contrast, an optimized approach to harvest laser energy is achieved by using a hybrid module consisting of a photovoltaic cell and a thermo-electric generator. Finally, practical considerations related to infrared power beaming are discussed and its potential applications are outlined. △ Less

Submitted 8 March, 2024; originally announced May 2024.

Comments: 14 pages, 11 Figures

Compact Non-Volatile Multilevel Sb$_2$Se$_3$ Electro-Optical Switching in the Mid-Infrared Group-IV-Photonics Platform

Authors: Richard Soref, Francesco De Leonardis, Martino De Carlo, Vittorio M. N. Passaro

Abstract: This theoretical modeling and simulation paper presents designs and projected performances of two non-volatile, broadband, on-chip 2-by-2 electro-optical switches based upon the germanium-on-insulator (GeOI) photonic-electronic platform operating at the 2.5 $μ$m mid-infrared wavelength. These compact devices facilitate large-scale integration on a monolithic wafer where all components are made of… ▽ More This theoretical modeling and simulation paper presents designs and projected performances of two non-volatile, broadband, on-chip 2-by-2 electro-optical switches based upon the germanium-on-insulator (GeOI) photonic-electronic platform operating at the 2.5 $μ$m mid-infrared wavelength. These compact devices facilitate large-scale integration on a monolithic wafer where all components are made of group-IV semiconductors. The switches are the two-waveguide directional coupler (DC) and the Mach-Zehnder interferometer (MZI). A thin-film graphene Joule-effect micro-heater is assumed on the planarized GeOI device to change the phase (reversably) of DC-slot-embedded Sb$_2$Se$_3$ phase-change material (PCM) from crystalline to amorphous. The MZI has this PCM within its slotted-arm waveguides. Simulations show high-performance bistable or multi-stable cross-bar switching in both devices. The 2-by-2 DC has an active coupling length of 17 $μ$m, 130 nm gap, and a footprint of 5 $μ$m -by- 31 $μ$m. The device bandwidth is 30 nm over a wavelength range where cross and bar insertion losses IL are less than 0.3 dB, and where optical crosstalk is less than -15 dB. Results for the 2-by-2 MZI show crossbar switching attained with a 7.8 $μ$m-length Sb$_2$Se$_3$ slot and a 5 $μ$m -by- 51 $μ$m switch footprint. Stable, multi-level switching in both devices is attained via partial amorphization. Thermal modeling shows that careful control of the voltage-pulse amplitude V applied to graphene (rectangular pulse duration of 500 ns) can give 32 levels, for example, using V in the range from 6.18 to 7.75 Volts. △ Less

Submitted 29 January, 2024; originally announced January 2024.

Roadmap** the Next Generation of Silicon Photonics

Authors: Sudip Shekhar, Wim Bogaerts, Lukas Chrostowski, John E. Bowers, Michael Hochberg, Richard Soref, Bhavin J. Shastri

Abstract: Silicon photonics has developed into a mainstream technology driven by advances in optical communications. The current generation has led to a proliferation of integrated photonic devices from thousands to millions - mainly in the form of communication transceivers for data centers. Products in many exciting applications, such as sensing and computing, are around the corner. What will it take to i… ▽ More Silicon photonics has developed into a mainstream technology driven by advances in optical communications. The current generation has led to a proliferation of integrated photonic devices from thousands to millions - mainly in the form of communication transceivers for data centers. Products in many exciting applications, such as sensing and computing, are around the corner. What will it take to increase the proliferation of silicon photonics from millions to billions of units shipped? What will the next generation of silicon photonics look like? What are the common threads in the integration and fabrication bottlenecks that silicon photonic applications face, and which emerging technologies can solve them? This perspective article is an attempt to answer such questions. We chart the generational trends in silicon photonics technology, drawing parallels from the generational definitions of CMOS technology. We identify the crucial challenges that must be solved to make giant strides in CMOS-foundry-compatible devices, circuits, integration, and packaging. We identify challenges critical to the next generation of systems and applications - in communication, signal processing, and sensing. By identifying and summarizing such challenges and opportunities, we aim to stimulate further research on devices, circuits, and systems for the silicon photonics ecosystem. △ Less

Submitted 19 January, 2024; v1 submitted 25 May, 2023; originally announced May 2023.

Group IV Mid-Infrared Thermophotovoltaic Cells on Silicon

Authors: Gérard Daligou, Richard Soref, Anis Attiaoui, Jaker Hossain, Mahmoud R. M. Atalla, Patrick Del Vecchio, Oussama Moutanabbir

Abstract: Compound semiconductors have been the predominant building blocks for the current mid-infrared thermophotovoltaic devices relevant to sub-2000 K heat conversion and power beaming. However, the prohibitively high cost associated with these technologies limits their broad adoption. Herein, to alleviate this challenge we introduce an all-group IV mid-infrared cell consisting of GeSn alloy directly on… ▽ More Compound semiconductors have been the predominant building blocks for the current mid-infrared thermophotovoltaic devices relevant to sub-2000 K heat conversion and power beaming. However, the prohibitively high cost associated with these technologies limits their broad adoption. Herein, to alleviate this challenge we introduce an all-group IV mid-infrared cell consisting of GeSn alloy directly on a silicon wafer. This emerging class of semiconductors provides strain and composition as degrees of freedom to control the bandgap energy thus covering the entire mid-infrared range. The proposed thermophotovoltaic device is composed of a fully relaxed Ge$_{0.83}$Sn$_{0.17}$ double heterostructure corresponding to a bandgap energy of 0.29 eV. A theoretical framework is derived to evaluate cell performance under high injection. The black-body radiation absorption is investigated using the generalized transfer matrix method thereby considering the mixed coherent/incoherent layer stacking. Moreover, the intrinsic recombination mechanisms and their importance in a narrow bandgap semiconductor were also taken into account. In this regard, the parabolic band approximation and Fermi's golden rule were combined for an accurate estimation of the radiative recombination rate. Based on these analyses, power conversion efficiencies of up to 9% are predicted for Ge$_{0.83}$Sn$_{0.17}$ thermophotovoltaic cells under black-body radiation at temperatures in the 500-1500 K range. A slight improvement in the efficiency is observed under the frontside illumination but vanishes below 800 K, while the use of a backside reflector improves the efficiency across the investigated black-body temperature range. The effects of the heterostructure thickness, surface recombination velocity, and carrier lifetime are also elucidated and discussed. △ Less

Submitted 21 February, 2023; originally announced February 2023.

An Integrated Optical Circuit Architecture for Inverse-Designed Silicon Photonic Components

Authors: Richard Soref, Dusan Gostimirovic

Abstract: In this work, we demonstrate a compact toolkit of inverse-designed topologically optimized silicon-photonic devices that are arranged in a plug-and-play fashion to realize many different photonic integrated circuits, both passive and active, each with a small footprint. The silicon-on-insulator 1550-nm toolkit contains a 2x2 3dB splitter-combiner, a 2x2 waveguide crossover and a 2x2 all-forward ad… ▽ More In this work, we demonstrate a compact toolkit of inverse-designed topologically optimized silicon-photonic devices that are arranged in a plug-and-play fashion to realize many different photonic integrated circuits, both passive and active, each with a small footprint. The silicon-on-insulator 1550-nm toolkit contains a 2x2 3dB splitter-combiner, a 2x2 waveguide crossover and a 2x2 all-forward add-drop resonator. The resonator can become a 2x2 electro-optical crossbar switch by means of the thermo-optical effect or phase-change cladding or free-carrier injection. For each of the ten circuits demonstrated in this work, the toolkit of photonic devices enables the compact circuit to achieve low insertion loss and low crosstalk. By adopting the sophisticated inverse-design approach, the design structure, shape, and sizing of each individual device can be made more flexible to better suit the architecture of the greater circuit. For a compact architecture, we present a unified, parallel waveguide circuit framework into which the devices are designed to fit seamlessly, thus enabling low-complexity circuit design. △ Less

Submitted 16 November, 2022; originally announced November 2022.

Comments: 8 pages, 14 figures

High-performance Pockels-effect modulation and switching in silicon-based GaP/Si, AlP/Si, ZnS/Si, AlN/3C-SiC, GaAs/Ge, ZnSe/GaAs, and ZnSe/Ge superlattice-on-insulator integrated circuits

Authors: Francesco De Leonardis, Richard Soref

Abstract: We propose new Si-based waveguided Superlattice on Insulator (SLOI) platforms for high-performance electro-optical (EO) 2 x 2 and N x M switching and 1 x 1 modulation; including broad spectrum and resonant. We present a theoretical investigation, based on the tight-binding Hamiltonian, of the Pockels EO effect in the lattice-matched undoped GaP/Si, AlP/Si, ZnS/Si, AlN/3C-SiC, GaAs/Ge, ZnSe/GaAs, a… ▽ More We propose new Si-based waveguided Superlattice on Insulator (SLOI) platforms for high-performance electro-optical (EO) 2 x 2 and N x M switching and 1 x 1 modulation; including broad spectrum and resonant. We present a theoretical investigation, based on the tight-binding Hamiltonian, of the Pockels EO effect in the lattice-matched undoped GaP/Si, AlP/Si, ZnS/Si, AlN/3C-SiC, GaAs/Ge, ZnSe/GaAs, and ZnSe/Ge wafer-scale short-period superlattices that are etched into waveguided networks of small-footprint Mach-Zehnder interferometers and micro-ring resonators to yield opto-electronic chips. △ Less

Submitted 19 August, 2022; originally announced August 2022.

Electrically injected GeSn lasers with peak wavelength up to 2.7 micrometer at 90 K

Authors: Yiyin Zhou, Solomon Ojo, Yuanhao Miao, Huong Tran, Joshua M. Grant, Grey Abernathy, Sylvester Amoah, Jake Bass, Gregory Salamo, Wei Du, Jifeng Liu, Joe Margetis, John Tolle, Yong-Hang Zhang, Greg Sun, Richard A. Soref, Baohua Li, Shui-Qing Yu

Abstract: GeSn lasers enable monolithic integration of lasers on the Si platform using all-group-IV direct-bandgap materials. Although optically pumped GeSn lasers have made significant progress, the study of the electrically injected lasers has just begun only recently. In this work, we present explorative investigations of electrically injected GeSn heterostructure lasers with various layer thicknesses an… ▽ More GeSn lasers enable monolithic integration of lasers on the Si platform using all-group-IV direct-bandgap materials. Although optically pumped GeSn lasers have made significant progress, the study of the electrically injected lasers has just begun only recently. In this work, we present explorative investigations of electrically injected GeSn heterostructure lasers with various layer thicknesses and material compositions. The cap layer total thickness was varied between 240 and 100 nm. At 10 K, a 240-nm-SiGeSn capped device had a threshold current density Jth = 0.6 kA/cm2 compared to Jth = 1.4 kA/cm2 of a device with 100-nm-SiGeSn cap due to an improved modal overlap with the GeSn gain region. Both devices had a maximum operating temperature Tmax = 100 K. Device with cap layers of Si0.03Ge0.89Sn0.08 and Ge0.95Sn0.05, respectively, were also compared. Due to less effective carrier (electron) confinement, the device with a 240-nm-GeSn cap had a higher threshold Jth = 2.4 kA/cm2 and lower maximum operating temperature Tmax = 90 K, compared to those of the 240-nm-SiGeSn capped device with Jth = 0.6 kA/cm2 and Tmax = 100 K. In the study of the active region material, the device with Ge0.85Sn0.15 active region had a 2.3 times higher Jth and 10 K lower Tmax, compared to the device with Ge0.89Sn0.11 in its active region. This is likely due to higher defect density in Ge0.85Sn0.15 rather than an intrinsic issue. The longest lasing wavelength was measured as 2682 nm at 90 K. The investigations provide guidance to the future structure design of GeSn laser diodes to further improve the performance. △ Less

Submitted 25 September, 2020; originally announced September 2020.

Comments: 21 pages, 5 figures, and 2 tables

Electrically injected GeSn lasers on Si operating up to 100 K

Authors: Yiyin Zhou, Yuanhao Miao, Solomon Ojo, Huong Tran, Grey Abernathy, Joshua M. Grant, Sylvester Amoah, Gregory Salamo, Wei Du, Jifeng Liu, Joe Margetis, John Tolle, Yong-Hang Zhang, Greg Sun, Richard A. Soref, Baohua Li, Shui-Qing Yu

Abstract: The significant progress of GeSn material development has enabled a feasible solution to the long-desired monolithically integrated lasers on the Si platform. While there are many reports focused on optically pumped lasers, GeSn lasers through electrical injection have not been experimentally achieved yet. In this work, we report the first demonstration of electrically injected GeSn lasers on Si.… ▽ More The significant progress of GeSn material development has enabled a feasible solution to the long-desired monolithically integrated lasers on the Si platform. While there are many reports focused on optically pumped lasers, GeSn lasers through electrical injection have not been experimentally achieved yet. In this work, we report the first demonstration of electrically injected GeSn lasers on Si. A GeSn/SiGeSn heterostructure diode grown on a Si substrate was fabricated into ridge waveguide laser devices and tested under pulsed conditions. Special considerations were given for the structure design to ensure effective carrier confinement and optical confinement that lead to lasing. Lasing was observed at temperatures from 10 to 100 K with emission peaks at around 2300 nm. The minimum threshold of 598 A/cm2 was recorded at 10 K and the threshold increased to 842 A/cm2 at 77 K. The spectral linewidth of a single peak was measured as small as 0.13 nm (0.06 meV). The maximum characteristic temperature was extracted as 99 K over the temperature range of 10-77 K. △ Less

Submitted 20 April, 2020; originally announced April 2020.

Si-based GeSn photodetectors towards mid-infrared imaging applications

Authors: Huong Tran, Thach Pham, Joe Margetis, Yiyin Zhou, Wei Dou, Perry C. Grant, Joshua M. Grant, Sattar Alkabi, Greg Sun, Richard A. Soref, John Tolle, Yong-Hang Zhang, Wei Du, Baohua Li, Mansour Mortazavi, Shui-Qing Yu

Abstract: This paper reports a comprehensive study of Si-based GeSn mid-infrared photodetectors, which includes: 1) the demonstration of a set of photoconductors with Sn compositions ranging from 10.5% to 22.3%, showing the cut-off wavelength has been extended to 3.65 um. The measured maximum D* of 1.1x10^10 cmHz^(1/2)W(-1) is comparable to that of commercial extended-InGaAs detectors; 2) the development of… ▽ More This paper reports a comprehensive study of Si-based GeSn mid-infrared photodetectors, which includes: 1) the demonstration of a set of photoconductors with Sn compositions ranging from 10.5% to 22.3%, showing the cut-off wavelength has been extended to 3.65 um. The measured maximum D* of 1.1x10^10 cmHz^(1/2)W(-1) is comparable to that of commercial extended-InGaAs detectors; 2) the development of surface passivation technique on photodiode based on in-depth analysis of dark current mechanism, effectively reducing the dark current. Moreover, mid-infrared images were obtained using GeSn photodetectors, showing the comparable image quality with that acquired by using commercial PbSe detectors. △ Less

Submitted 6 June, 2019; originally announced June 2019.

Comments: 25 pages, 8 figures

Hybrid Photonic-Plasmonic Non-blocking Broadband 5x5 Router for Optical Networks

Authors: Shuai Sun, Vikram K. Narayana, Ibrahim Sarpkaya, Joseph Crandall, Richard A. Soref, Hamed Dalir, Tarek El-Ghazawi, Volker J. Sorger

Abstract: Photonic data routing in optical networks overcomes the limitations of electronic routers with respect to data rate, latency, and energy consumption while suffering from dynamic power consumption, non-simultaneous usage of multiple wavelength channels, and large footprints. Here we show the first hybrid photonic-plasmonic, non-blocking, broadband 5x5 router. The compact footprint (<250 μm2) enable… ▽ More Photonic data routing in optical networks overcomes the limitations of electronic routers with respect to data rate, latency, and energy consumption while suffering from dynamic power consumption, non-simultaneous usage of multiple wavelength channels, and large footprints. Here we show the first hybrid photonic-plasmonic, non-blocking, broadband 5x5 router. The compact footprint (<250 μm2) enables high operation speed (480 GHz) requiring only 82 fJ/bit (1.9 dB) of averaged energy consumption (routing loss). The router supports multi-wavelength up to 206 nm in the telecom band. Having a data-capacity of >70 Tbps, thus demonstrating key features required by future high data-throughput optical networks. △ Less

Submitted 14 November, 2017; v1 submitted 18 August, 2017; originally announced August 2017.

Comments: 12 pages, 4 figures

Journal ref: IEEE Photonics Journal, Volume: PP, Issue: 99, Page: 1-1 (2017)

Si-based GeSn lasers with wavelength coverage of 2 to 3 μm and operating temperatures up to 180 K

Authors: Joe Margetis, Sattar Al-Kabi, Wei Du, Wei Dou, Yiyin Zhou, Thach Pham, Perry Grant, Seyed Ghetmiri, Aboozar Mosleh, Baohua Li, Jifeng Liu, Greg Sun, Richard Soref, John Tolle, Mansour Mortazavi, Shui-Qing Yu

Abstract: A Si-based monolithic laser is highly desirable for full integration of Si-photonics. Lasing from direct bandgap group-IV GeSn alloy has opened a completely new venue from the traditional III-V integration approach. We demonstrated optically pumped GeSn lasers on Si with broad wavelength coverage from 2 to 3 μm. The GeSn alloys were grown using newly developed approaches with an industry standard… ▽ More A Si-based monolithic laser is highly desirable for full integration of Si-photonics. Lasing from direct bandgap group-IV GeSn alloy has opened a completely new venue from the traditional III-V integration approach. We demonstrated optically pumped GeSn lasers on Si with broad wavelength coverage from 2 to 3 μm. The GeSn alloys were grown using newly developed approaches with an industry standard chemical vapor deposition reactor and low-cost commercially available precursors. The achieved maximum Sn composition of 17.5% exceeded the generally acknowledged Sn incorporation limits for using similar deposition chemistries. The highest lasing temperature was measured as 180 K with the active layer thickness as thin as 260 nm. The unprecedented lasing performance is mainly due to the unique growth approaches, which offer high-quality epitaxial materials. The results reported in this work show a major advance towards Si-based mid-infrared laser sources for integrated photonics. △ Less

Submitted 19 August, 2017; originally announced August 2017.

Comments: 34 pages, 12 figures

MSC Class: 00A79

A compact plasmonic MOS-based 2x2 electro-optic switch

Authors: Chenran Ye, Ke Liu, Richard A. Soref, Volker J. Sorger

Abstract: We report on a three-waveguide electro-optic switch for compact photonic integrated circuits and data routing applications. The device features a plasmonic metal-oxide-semiconductor (MOS) mode for enhanced light-matter-interactions. The switching mechanism originates from a capacitor-like design where the refractive index of the active medium, Indium-Tin-Oxide, is altered via shifting the plasma f… ▽ More We report on a three-waveguide electro-optic switch for compact photonic integrated circuits and data routing applications. The device features a plasmonic metal-oxide-semiconductor (MOS) mode for enhanced light-matter-interactions. The switching mechanism originates from a capacitor-like design where the refractive index of the active medium, Indium-Tin-Oxide, is altered via shifting the plasma frequency due to carrier accumulation inside the waveguide-based MOS structure. This light manipulation mechanism controls the transmission direction of transverse magnetic polarized light into either a CROSS or BAR waveguide port. The extinction ratio of 18 dB (7) dB for the CROSS (BAR) state, respectively, is achieved via a gating voltage bias. The ultrafast broadband fJ/bit device allows for seamless integration with Siliconon- Insulator platforms to for low-cost manufacturing. △ Less

Submitted 7 June, 2015; originally announced June 2015.

Comments: 10 pages,6 figures

Guided Plasmon Modes of Elliptical Cross Section Silver Nanoridges

Authors: Zeyu Pan, Junpeng Guo, Richard Soref, Walter Buchwald

Abstract: Propagating two-dimensional plasmon modes guided by elliptical cross section silver nanoridges are investigated in this paper. Mode field profiles, dispersion curves, propagation distances, and figure-of-merits of the plasmon ridge modes are calculated for various elliptical cross sections. It is found that an elliptical cross section metal nanoridge, if designed properly, can support a well-confi… ▽ More Propagating two-dimensional plasmon modes guided by elliptical cross section silver nanoridges are investigated in this paper. Mode field profiles, dispersion curves, propagation distances, and figure-of-merits of the plasmon ridge modes are calculated for various elliptical cross sections. It is found that an elliptical cross section metal nanoridge, if designed properly, can support a well-confined plasmon mode with a longer propagation distance and a higher figure-of-merit than the flat-top nanoridge plasmon waveguide of the same width. The optimal ridge waveguide cross section is obtained when the elliptical ridge top has a semicircular cross section. When the curvature of the elliptical nanoridge is large, the mode approaches the tightly confined wedge plasmon mode. △ Less

Submitted 2 July, 2012; v1 submitted 11 February, 2012; originally announced February 2012.

Comments: arXiv admin note: text overlap with arXiv:1202.2477

Guided plasmon modes of triangular and inverted triangular cross section silver nanoridges

Authors: Zeyu Pan, Junpeng Guo, Richard Soref, Walter Buchwald, Greg Sun

Abstract: Propagating two-dimensional plasmon modes guided along silver nanoridge waveguides with triangular and inverted triangular cross sections are investigated in this paper. Mode field profiles, dispersion curves, propagation distances, and figure-of-merits of the plasmon ridge modes are calculated for silver nanoridge waveguides with various triangular and inverted triangular waveguide cross sections… ▽ More Propagating two-dimensional plasmon modes guided along silver nanoridge waveguides with triangular and inverted triangular cross sections are investigated in this paper. Mode field profiles, dispersion curves, propagation distances, and figure-of-merits of the plasmon ridge modes are calculated for silver nanoridge waveguides with various triangular and inverted triangular waveguide cross sections. It is found that the triangular cross section nanoridge waveguide, if designed properly, can have longer propagation distance and higher figure-of-merit than the flat-top nanoridge waveguide of the same width. When the triangle height of the nanoridge is high, the mode approaches to the small angle wedge mode. An inverted triangular cross section nanoridge mode can be considered as a hybrid mode of two metal wedge plasmon modes. When inverted triangle depth increases, the propagation distance and the figure-of-merit decrease dramatically, suggesting the poorer performance when compared to the flat-top nanoridge plasmon waveguide. △ Less

Submitted 11 February, 2012; originally announced February 2012.

Journal ref: JOSA B, Vol. 29, Issue 5, pp. 950-958 (2012)

A wide-band perfect light absorber at mid-wave infrared using multiplexed metal structures

Authors: Joshua Hendrickson, Junpeng Guo, Boyang Zhang, Walter Buchwald, Richard Soref

Abstract: We experimentally demonstrate a wide band near perfect light absorber in the mid-wave infrared region using multiplexed plasmonic metal structures. The wide band near perfect light absorber is made of two different size gold metal squares multiplexed on a thin dielectric spacing layer on the top of a thick metal layer in each unit cell. We also fabricate regular non-multiplexed structure perfect l… ▽ More We experimentally demonstrate a wide band near perfect light absorber in the mid-wave infrared region using multiplexed plasmonic metal structures. The wide band near perfect light absorber is made of two different size gold metal squares multiplexed on a thin dielectric spacing layer on the top of a thick metal layer in each unit cell. We also fabricate regular non-multiplexed structure perfect light absorbers. The multiplexed structure IR absorber absorbs above 98% incident light over a much wider spectral band than the regular non-multiplexed structure perfect light absorbers in the mid-wave IR region. △ Less

Submitted 6 January, 2012; originally announced January 2012.

Mode Properties of Flat-top Silver Nano-ridge Surface Plasmon Waveguides

Authors: Zeyu Pan, Junpeng Guo, Richard Soref, Walter Buchwald, Greg Sun

Abstract: We investigate surface plasmon modes supported by flat-top silver nano-ridges. We calculate the mode electromagnetic field distribution, the dispersion curve, the travel range, and the figure-of-merit of the nano-ridge mode. We find that the nano-ridge surface plasmon modes are quasi-TEM modes with longitudinal field components three orders of magnitude smaller than the transverse field components… ▽ More We investigate surface plasmon modes supported by flat-top silver nano-ridges. We calculate the mode electromagnetic field distribution, the dispersion curve, the travel range, and the figure-of-merit of the nano-ridge mode. We find that the nano-ridge surface plasmon modes are quasi-TEM modes with longitudinal field components three orders of magnitude smaller than the transverse field components. The quasi-TEM nature of mode profiles reveals that the propagation of free electron oscillations on the top of the nano-ridge contributes mainly to the tightly confined ridge mode. We also find that as the width of the nano-ridge decreases, the ridge mode becomes more tightly confined on the ridge top. As the width of the nano-ridge increases, the nano-ridge mode approaches two decoupled right-angle wedge plasmon modes. △ Less

Submitted 4 December, 2011; originally announced December 2011.

Comments: 23 pages, 9 figures, journal article

Journal ref: JOSA B, Vol. 29, Issue 3, pp. 340-345 (2012)