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Perpendicular magnetic anisotropy of an ultrathin Fe layer grown on NiO(001)
Authors:
Soki Kobayashi,
Hiroki Koizumi,
Hideto Yanagihara,
Jun Okabayashi,
Takahiro Kondo,
Takahide Kubota,
Koki Takanashi,
Yoshiaki Sonobe
Abstract:
The magnetic anisotropy and magnetic interactions at the interface between Fe and NiO(001) were investigated. Depending on the growth conditions of the NiO(001) layers and the post-annealing temperature, the preferential magnetization direction of the ultrathin Fe layer grown on a NiO(001) layer changed from in-plane to a direction perpendicular to the film plane. The lattice constant of the NiO(0…
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The magnetic anisotropy and magnetic interactions at the interface between Fe and NiO(001) were investigated. Depending on the growth conditions of the NiO(001) layers and the post-annealing temperature, the preferential magnetization direction of the ultrathin Fe layer grown on a NiO(001) layer changed from in-plane to a direction perpendicular to the film plane. The lattice constant of the NiO(001) layers parallel to the growth direction increased with O$_2$ flow rate, while that parallel to the in-plane were locked onto the MgO(001) substrate regardless of the growth conditions of the NiO layers. Moreover, perpendicular magnetization was observed only when the NiO layer was grown with O$_2$ flow rates higher than 2.0 sccm corresponding to oxygen-rich NiO. X-ray magnetic circular dichroism measurements revealed an enhancement in anisotropic orbital magnetic moments similar to the origin of perpendicular magnetic anisotropy at the Fe/MgO(001) interface. The interfacial magnetic anisotropy energies were 0.93 and 1.02 mJ/m$^2$ at room temperature and at 100 K, respectively, indicating less temperature dependence. In contrast, the coercivity $H_c$ exhibited a significant temperature dependence. Although no signature of exchange bias or unidirectional loop shift was observed, $H_c$ was strongly dependent on the NiO layer thickness, indicating that the exchange interaction at the interface between the ferromagnetic and antiferromagnetic layers was not negligible, despite the NiO(001) being a spin-compensated surface.
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Submitted 1 May, 2023;
originally announced May 2023.
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Band-folding-driven high tunnel magnetoresistance ratios in (111)-oriented junctions with SrTiO$_3$ barriers
Authors:
Keisuke Masuda,
Hiroyoshi Itoh,
Yoshiaki Sonobe,
Hiroaki Sukegawa,
Seiji Mitani,
Yoshio Miura
Abstract:
We theoretically study the tunnel magnetoresistance (TMR) effect in (111)-oriented magnetic tunnel junctions (MTJs) with SrTiO$_{3}$ barriers, Co/SrTiO$_{3}$/Co(111) and Ni/SrTiO$_{3}$/Ni(111). Our analysis combining the first-principles calculation and the Landauer formula shows that the Co-based MTJ has a high TMR ratio over 500%, while the Ni-based MTJ has a smaller value (290%). Since the in-p…
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We theoretically study the tunnel magnetoresistance (TMR) effect in (111)-oriented magnetic tunnel junctions (MTJs) with SrTiO$_{3}$ barriers, Co/SrTiO$_{3}$/Co(111) and Ni/SrTiO$_{3}$/Ni(111). Our analysis combining the first-principles calculation and the Landauer formula shows that the Co-based MTJ has a high TMR ratio over 500%, while the Ni-based MTJ has a smaller value (290%). Since the in-plane lattice periodicity of SrTiO$_{3}$ is about twice that of the primitive cell of fcc Co (Ni), the original bands of Co (Ni) are folded in the $k_x$-$k_y$ plane corresponding to the $ab$ plane of the MTJ supercell. We find that this band folding gives a half-metallic band structure in the $Λ_1$ state of Co (Ni) and the coherent tunneling of such a half-metallic $Λ_1$ state yields a high TMR ratio. We also reveal that the difference in the TMR ratio between the Co- and Ni-based MTJs can be understood by different $s$-orbital weights in the $Λ_1$ band at the Fermi level.
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Submitted 31 October, 2022; v1 submitted 14 September, 2022;
originally announced September 2022.
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Interfacial giant tunnel magnetoresistance and bulk-induced large perpendicular magnetic anisotropy in (111)-oriented junctions with fcc ferromagnetic alloys: A first-principles study
Authors:
Keisuke Masuda,
Hiroyoshi Itoh,
Yoshiaki Sonobe,
Hiroaki Sukegawa,
Seiji Mitani,
Yoshio Miura
Abstract:
We study the tunnel magnetoresistance (TMR) effect and magnetocrystalline anisotropy in a series of magnetic tunnel junctions (MTJs) with $L1_1$-ordered fcc ferromagnetic alloys and MgO barrier along the [111] direction. Considering the (111)-oriented MTJs with different $L1_1$ alloys, we calculate their TMR ratios and magnetocrystalline anisotropies on the basis of the first-principles calculatio…
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We study the tunnel magnetoresistance (TMR) effect and magnetocrystalline anisotropy in a series of magnetic tunnel junctions (MTJs) with $L1_1$-ordered fcc ferromagnetic alloys and MgO barrier along the [111] direction. Considering the (111)-oriented MTJs with different $L1_1$ alloys, we calculate their TMR ratios and magnetocrystalline anisotropies on the basis of the first-principles calculations. The analysis shows that the MTJs with Co-based alloys (CoNi, CoPt, and CoPd) have high TMR ratios over 2000$\%$. These MTJs have energetically favored Co-O interfaces where interfacial antibonding between Co $d$ and O $p$ states is formed around the Fermi level. We find that the resonant tunneling of the antibonding states, called the interface resonant tunneling, is the origin of the obtained high TMR ratios. Our calculation of the magnetocrystalline anisotropy shows that many $L1_1$ alloys have large perpendicular magnetic anisotropy (PMA). In particular, CoPt has the largest value of anisotropy energy $K_{\rm u} \approx 10\,{\rm MJ/m^3}$. We further conduct a perturbation analysis of the PMA with respect to the spin-orbit interaction and reveal that the large PMA in CoPt and CoNi mainly originates from spin-conserving perturbation processes around the Fermi level.
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Submitted 22 February, 2021; v1 submitted 2 July, 2020;
originally announced July 2020.
