Design Space and Variability Analysis of SOI MOSFET for Ultra-Low Power Band-to-Band Tunneling Neurons
Authors:
Jay Sonawane,
Shubham Patil,
Abhishek Kadam,
Ajay Kumar Singh,
Sandip Lashkare,
Veeresh Deshpande,
Udayan Ganguly
Abstract:
Large spiking neural networks (SNNs) require ultra-low power and low variability hardware for neuromorphic computing applications. Recently, a band-to-band tunneling-based (BTBT) integrator, enabling sub-kHz operation of neurons with area and energy efficiency, was proposed. For an ultra-low power implementation of such neurons, a very low BTBT current is needed, so minimizing current without degr…
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Large spiking neural networks (SNNs) require ultra-low power and low variability hardware for neuromorphic computing applications. Recently, a band-to-band tunneling-based (BTBT) integrator, enabling sub-kHz operation of neurons with area and energy efficiency, was proposed. For an ultra-low power implementation of such neurons, a very low BTBT current is needed, so minimizing current without degrading neuronal properties is essential. Low variability is needed in the ultra-low current integrator to avoid network performance degradation in a large BTBT neuron-based SNN. To address this, we conducted design space and variability analysis in TCAD, utilizing a well-calibrated TCAD deck with experimental data from GlobalFoundries 32nm PD-SOI MOSFET. First, we discuss the physics-based explanation of the tunneling mechanism. Second, we explore the impact of device design parameters on SOI MOSFET performance, highlighting parameter sensitivities to tunneling current. With device parameters' optimization, we demonstrate a ~20x reduction in BTBT current compared to the experimental data. Finally, a variability analysis that includes the effects of random dopant fluctuations (RDF), oxide thickness variability (OTV), and channel-oxide interface traps DIT in the BTBT, SS, and ON regimes of operation is shown. The BTBT regime shows high sensitivity to the RDF and OTV as any variation in them directly modulates the tunnel length or the electric field at the drain-channel junction, whereas minimal sensitivity to DIT is observed.
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Submitted 30 November, 2023;
originally announced November 2023.
An analysis of vaccine-related sentiments from development to deployment of COVID-19 vaccines
Authors:
Rohitash Chandra,
Jayesh Sonawane,
Janhavi Lande,
Cathy Yu
Abstract:
Anti-vaccine sentiments have been well-known and reported throughout the history of viral outbreaks and vaccination programmes. The COVID-19 pandemic had fear and uncertainty about vaccines which has been well expressed on social media platforms such as Twitter. We analyse Twitter sentiments from the beginning of the COVID-19 pandemic and study the public behaviour during the planning, development…
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Anti-vaccine sentiments have been well-known and reported throughout the history of viral outbreaks and vaccination programmes. The COVID-19 pandemic had fear and uncertainty about vaccines which has been well expressed on social media platforms such as Twitter. We analyse Twitter sentiments from the beginning of the COVID-19 pandemic and study the public behaviour during the planning, development and deployment of vaccines expressed in tweets worldwide using a sentiment analysis framework via deep learning models. In this way, we provide visualisation and analysis of anti-vaccine sentiments over the course of the COVID-19 pandemic. Our results show a link between the number of tweets, the number of cases, and the change in sentiment polarity scores during major waves of COVID-19 cases. We also found that the first half of the pandemic had drastic changes in the sentiment polarity scores that later stabilised which implies that the vaccine rollout had an impact on the nature of discussions on social media.
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Submitted 23 June, 2023;
originally announced June 2023.
