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Two-dimensional electrons at mirror and twistronic twin boundaries in van der Waals ferroelectrics
Authors:
James G. McHugh,
Xue Li,
Isaac Soltero,
Vladimir I. Fal'ko
Abstract:
Semiconducting transition metal dichalcogenides (MX$_2$) occur in 2H and rhombohedral (3R) polytypes, respectively distinguished by anti-parallel and parallel orientation of consecutive monolayer lattices. In its bulk form, 3R-MX$_2$ is ferroelectric, hosting an out-of-plane electric polarisation, the direction of which is dictated by stacking. Here, we predict that twin boundaries, separating adj…
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Semiconducting transition metal dichalcogenides (MX$_2$) occur in 2H and rhombohedral (3R) polytypes, respectively distinguished by anti-parallel and parallel orientation of consecutive monolayer lattices. In its bulk form, 3R-MX$_2$ is ferroelectric, hosting an out-of-plane electric polarisation, the direction of which is dictated by stacking. Here, we predict that twin boundaries, separating adjacent polarization domains with reversed built-in electric fields, are able to host two-dimensional electrons and holes with an areal density reaching $\sim 10^{13} {\rm cm}^{-2}$. Our modelling suggests that n-doped twin boundaries have a more promising binding energy than p-doped ones, whereas hole accumulation is stable at external surfaces of a twinned film. We also propose that assembling pairs of mono-twin films with a `magic' twist angle $θ^*$ that provides commensurability between the moiré pattern at the interface and the accumulated carrier density, should promote a regime of strongly correlated states of electrons, such as Wigner crystals, and we specify the values of $θ^*$ for homo- and heterostructures of various TMDs.
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Submitted 28 June, 2024; v1 submitted 23 May, 2024;
originally announced May 2024.
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Competition of moiré network sites to form electronic quantum dots in reconstructed MoX${}_2$/WX${}_2$ heterostructures
Authors:
Isaac Soltero,
Mikhail A. Kaliteevski,
James G. McHugh,
Vladimir V. Enaldiev,
Vladimir I. Fal'ko
Abstract:
Twisted bilayers of two-dimensional semiconductors offer a versatile platform to engineer quantum states for charge carriers using moiré superlattice effects. Among the systems of recent interest are twistronic MoSe${}_{2}$/WSe${}_{2}$ and MoS${}_{2}$/WS${}_{2}$ heterostructures, which undergo reconstruction into preferential stacking domains and highly strained domain wall networks, determining t…
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Twisted bilayers of two-dimensional semiconductors offer a versatile platform to engineer quantum states for charge carriers using moiré superlattice effects. Among the systems of recent interest are twistronic MoSe${}_{2}$/WSe${}_{2}$ and MoS${}_{2}$/WS${}_{2}$ heterostructures, which undergo reconstruction into preferential stacking domains and highly strained domain wall networks, determining the electron/hole localization across moiré superlattices. Here, we present a catalogue of options for the formation of self-organized quantum dots and wires in lattice-reconstructed marginally twisted MoSe${}_{2}$/WSe${}_{2}$ and MoS${}_{2}$/WS${}_{2}$ bilayers, fine tuned by the twist angle between the monolayers from perfect alignment to $θ\sim 1^{\circ}$, and by choosing parallel or anti-parallel orientation of their unit cells. The proposed scenarios of the quantum dots and wires formation are found using multi-scale modelling that takes into account the features of strain textures caused by twirling of domain wall networks.
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Submitted 29 November, 2023;
originally announced November 2023.
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Dimensionality crossover for moiré excitons in twisted bilayers of anisotropic two-dimensional semiconductors
Authors:
Isaac Soltero,
David A. Ruiz-Tijerina
Abstract:
We study the energies and optical spectra of excitons in twisted bilayers of anisotropic van der Waals semiconductors exhibiting moiré patterns, taking phosphorene as a case study. Following the electronic Hamiltonian introduced by us in [Phys. Rev. B 105, 235421 (2022)], and leveraging the scale separation between the moiré lengthscale and the exciton Bohr radii, we introduce a continuous model f…
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We study the energies and optical spectra of excitons in twisted bilayers of anisotropic van der Waals semiconductors exhibiting moiré patterns, taking phosphorene as a case study. Following the electronic Hamiltonian introduced by us in [Phys. Rev. B 105, 235421 (2022)], and leveraging the scale separation between the moiré lengthscale and the exciton Bohr radii, we introduce a continuous model for excitons that incorporates the spatial variation of their binding energies. Our zone-folding calculations reveal a dimensionality crossover for the exciton states, driven by the combined dispersion- and moiré potential anisotropies, from quantum-dot-like (0D) lattices at twist angles $θ<θ_*$, to quantum-wire-like (1D) arrays at $θ>θ_*$, with crossover angle $θ_*=4^\circ$. We identify clear signatures of this dimensionality crossover in the twist angle dependence of the excitonic absorption spectra, which allows experimental verification of our theoretical results through standard optical measurements. Our results establish two-dimensional anisotropic moiré semiconductors as versatile solid-state platforms for exploring bosonic correlations across different dimensionalities.
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Submitted 7 August, 2023;
originally announced August 2023.
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Moiré band structures of twisted phosphorene bilayers
Authors:
Isaac Soltero,
Jonathan Guerrero-Sánchez,
Francisco Mireles,
David A. Ruiz-Tijerina
Abstract:
We report on the theoretical electronic spectra of twisted phosphorene bilayers exhibiting moiré patterns, as computed by means of a continuous approximation to the moiré superlattice Hamiltonian. Our model is constructed by interpolating between effective $Γ$-point conduction- and valence-band Hamiltonians for the different stacking configurations approximately realized across the moiré supercell…
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We report on the theoretical electronic spectra of twisted phosphorene bilayers exhibiting moiré patterns, as computed by means of a continuous approximation to the moiré superlattice Hamiltonian. Our model is constructed by interpolating between effective $Γ$-point conduction- and valence-band Hamiltonians for the different stacking configurations approximately realized across the moiré supercell, formulated on symmetry grounds. We predict the realization of three distinct regimes for $Γ$-point electrons and holes at different twist angle ranges: a Hubbard regime for small twist angles $θ< 2^\circ$, where the electronic states form arrays of quantum-dot-like states, one per moiré supercell; a Tomonaga-Luttinger regime at intermediate twist angles $2^\circ < θ\lesssim 10^\circ$, characterized by the appearance of arrays of quasi-1D states; and finally, a ballistic regime at large twist angles $θ\gtrsim 10^\circ$, where the band-edge states are delocalized, with dispersion anisotropies modulated by the twist angle. Our method correctly reproduces recent results based on large-scale ab initio calculations at a much lower computational cost, and with fewer restrictions on the twist angles considered.
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Submitted 4 June, 2022; v1 submitted 5 April, 2022;
originally announced April 2022.
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Theory of moiré localized excitons in transition-metal dichalcogenide heterobilayers
Authors:
David A. Ruiz-Tijerina,
Isaac Soltero,
Francisco Mireles
Abstract:
Transition-metal dichalcogenide heterostructures exhibit moiré patterns that spatially modulate the electronic structure across the material's plane. For certain material pairs, this modulation acts as a potential landscape with deep, trigonally symmetric wells capable of localizing interlayer excitons, forming periodic arrays of quantum emitters. Here, we study these moiré localized exciton state…
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Transition-metal dichalcogenide heterostructures exhibit moiré patterns that spatially modulate the electronic structure across the material's plane. For certain material pairs, this modulation acts as a potential landscape with deep, trigonally symmetric wells capable of localizing interlayer excitons, forming periodic arrays of quantum emitters. Here, we study these moiré localized exciton states and their optical properties. By numerically solving the two-body problem for an interacting electron-hole pair confined by a trigonal potential, we compute the localized exciton spectra for different pairs of materials. We derive optical selection rules for the different families of localized states, each belonging to one of the irreducible representations of the potential's symmetry group $C_{3v}$, and numerically estimate their polarization-resolved absorption spectra. We find that the optical response of localized moiré interlayer excitons is dominated by states belonging to the doubly-degenerate $E$ irreducible representation. Our results provide new insights into the optical properties of artificially confined excitons in two-dimensional semiconductors.
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Submitted 10 March, 2021; v1 submitted 7 July, 2020;
originally announced July 2020.
