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Room temperature ballistic transport in InSb quantum well nanodevices
Authors:
A. M. Gilbertson,
A. Kormanyos,
P. D. Buckle,
M. Fearn,
T. Ashley,
C. J. Lambert,
S. A. Solin,
L. F. Cohen
Abstract:
We report the room temperature observation of significant ballistic electron transport in shallow etched four-terminal mesoscopic devices fabricated on an InSb/AlInSb quantum well (QW) heterostructure with a crucial partitioned growth-buffer scheme. Ballistic electron transport is evidenced by a negative bend resistance signature which is quite clearly observed at 295 K and at current densities in…
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We report the room temperature observation of significant ballistic electron transport in shallow etched four-terminal mesoscopic devices fabricated on an InSb/AlInSb quantum well (QW) heterostructure with a crucial partitioned growth-buffer scheme. Ballistic electron transport is evidenced by a negative bend resistance signature which is quite clearly observed at 295 K and at current densities in excess of 10$^{6}$ A/cm$^{2}$. This demonstrates unequivocally that by using effective growth and processing strategies, room temperature ballistic effects can be exploited in InSb/AlInSb QWs at practical device dimensions.
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Submitted 21 November, 2011;
originally announced November 2011.
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Ballistic transport and boundary scattering in InSb/InxAl1-xSb mesoscopic devices
Authors:
A. M. Gilbertson,
M. Fearn,
A. Kormányos,
D. E. Read,
C. J. Lambert,
M. T. Emeny,
T. Ashley,
S. A. Solin,
L. F. Cohen
Abstract:
We describe the influence of hard wall confinement and lateral dimension on the low temperature transport properties of long diffusive channels and ballistic crosses fabricated in an InSb/InxAl1-xSb heterostructure. Partially diffuse boundary scattering is found to play a crucial role in the electron dynamics of ballistic crosses and substantially enhance the negative bend resistance. Experimental…
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We describe the influence of hard wall confinement and lateral dimension on the low temperature transport properties of long diffusive channels and ballistic crosses fabricated in an InSb/InxAl1-xSb heterostructure. Partially diffuse boundary scattering is found to play a crucial role in the electron dynamics of ballistic crosses and substantially enhance the negative bend resistance. Experimental observations are supported by simulations using a classical billiard ball model for which good agreement is found when diffuse boundary scattering is included.
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Submitted 20 September, 2010;
originally announced September 2010.
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Spin glassiness and power law scaling in a quasi-triangular spin-1/2 compound
Authors:
Jian Wu,
Julia S. Wildeboer,
Fletcher Werner,
Alexander Seidel,
Z. Nussinov,
S. A. Solin
Abstract:
We present data on the magnetic properties of two classes of layered spin S=1/2 antiferromagnetic quasi-triangular lattice materials: $Cu_{2(1-x)}Zn_{2x}(OH)_3NO_3$ ($0 < x < 0.65$) and its long chain organic derivatives $Cu_{2(1-x)}Zn_{2x}(OH)_3(C_7H_{15}COO)\cdot mH_2O$ ($0 < x < 0.29$), where non-magnetic Zn substitutes Cu isostructurally. It is found that the long-chain compounds, even in a cl…
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We present data on the magnetic properties of two classes of layered spin S=1/2 antiferromagnetic quasi-triangular lattice materials: $Cu_{2(1-x)}Zn_{2x}(OH)_3NO_3$ ($0 < x < 0.65$) and its long chain organic derivatives $Cu_{2(1-x)}Zn_{2x}(OH)_3(C_7H_{15}COO)\cdot mH_2O$ ($0 < x < 0.29$), where non-magnetic Zn substitutes Cu isostructurally. It is found that the long-chain compounds, even in a clean system in the absence of dilution, $x\!=\!0$, show spin-glass behavior, as evidenced by DC and AC susceptibility, and by time dependent magnetization measurements. A striking feature is the observation of a sharp crossover between two successive power law regimes in the DC susceptibility above the freezing temperature. Specific heat data are consistent with a conventional phase transition in the unintercalated compounds, and glassy behavior in the long chain compunds.
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Submitted 2 July, 2010;
originally announced July 2010.
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Finite element modeling of extraordinary optoconductance in GaAs-In metal-semiconductor hybrid structures
Authors:
K. A. Wieland,
Yun Wang,
S. A. Solin,
A. M. Girgis,
L. R. Ram-Mohan
Abstract:
We present a detailed discussion of extraordinary optoconductance (EOC). Experimental data was acquired via macroscopic metal-semiconductor hybrid structures composed of GaAs and In and subjected to illumination from an Ar ion laser. A drift diffusion model using the finite element method (FEM) provided a reasonable fit to the data. EOC is explored as a function of laser position, bias current,…
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We present a detailed discussion of extraordinary optoconductance (EOC). Experimental data was acquired via macroscopic metal-semiconductor hybrid structures composed of GaAs and In and subjected to illumination from an Ar ion laser. A drift diffusion model using the finite element method (FEM) provided a reasonable fit to the data. EOC is explored as a function of laser position, bias current, laser power density, and temperature. The positional dependence of the voltage is accounted for by the Dember effect, with the model incorporating the excess hole distribution based on the carrier mobility, and thus the mean free path. The bias current is found to produce a linear voltage offset and does not influence the EOC. A linear relationship is found between the laser power density and the voltage in the bare and hybrid devices. This dependence is reproduced in the model by a generation rate parameter which is related to the power density. Incorporating the mobility and diffusion temperature dependence, the model directly parallels the temperature dependence of the EOC without the use of fitting parameters.
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Submitted 9 March, 2006; v1 submitted 6 February, 2006;
originally announced February 2006.
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Design and Properties of a scanning EMR probe Microscope
Authors:
S. A. Solin
Abstract:
The design, fabrication, and predicted performance of a new type of magnetic scanning probe microscope based on the newly discovered phenomenon of extraordinary magnetoresistance (EMR) is described. It is shown that the new probe should advance the state of the art of both sensitivity and spatial resolution by an order of magnitude or more.
The design, fabrication, and predicted performance of a new type of magnetic scanning probe microscope based on the newly discovered phenomenon of extraordinary magnetoresistance (EMR) is described. It is shown that the new probe should advance the state of the art of both sensitivity and spatial resolution by an order of magnitude or more.
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Submitted 6 February, 2006;
originally announced February 2006.
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Carrier Mobilities in Delta-doped Heterostructures
Authors:
Y. Shao,
S. A. Solin,
L. R. Ram-Mohan
Abstract:
For applications to sensor design, the product nxmu of the electron density n and the mobility mu is a key parameter to be optimized for enhanced device sensitivity. We model the carrier mobility in a two dimensional electron gas (2DEG) layer developed in a delta-doped heterostructure. The subband energy levels, electron wave functions, and the band-edge profile are obtained by numerically solvi…
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For applications to sensor design, the product nxmu of the electron density n and the mobility mu is a key parameter to be optimized for enhanced device sensitivity. We model the carrier mobility in a two dimensional electron gas (2DEG) layer developed in a delta-doped heterostructure. The subband energy levels, electron wave functions, and the band-edge profile are obtained by numerically solving the Schrodinger and Poisson equations self-consistently. The electron mobility is calculated by including contributions of scattering from ionized impurities, the background neutral impurities, the deformation potential acoustic phonons, and the polar optical phonons. We calculate the dependencies of nxmu on temperature, spacer layer thickness, do** density, and the quantum well thickness. The model is applied to delta-doped quantum well heterostructures of AlInSb-InSb. At low temperature, mobilities as high as 1.3x10^3 m^2/Vs are calculated for large spacer layers (400 A) and well widths (400 A). The corresponding room temperature mobility is 10 m^2/Vs. The dependence of nxmu shows a maximum for a spacer thickness of 300 A for higher background impurity densities while it continues to increase monotonically for lower background impurity densities; this has implications for sensor design.
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Submitted 6 February, 2006;
originally announced February 2006.
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The Effect of Transfer Printing on Pentacene Thin-Film Crystal Structure
Authors:
Y. Shao,
S. A. Solin,
D. R. Hines,
E. D. Williams
Abstract:
The thermal deposition and transfer Printing method had been used to produce pentacene thin-films on SiO2/Si and plastic substrates (PMMA and PVP), respectively. X-ray diffraction patterns of pentacene thin films showed reflections associated with highly ordered polycrystalline films and a coexistence of two polymorph phases classified by their d-spacing, d(001): 14.4 and 15.4 A.The dependence o…
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The thermal deposition and transfer Printing method had been used to produce pentacene thin-films on SiO2/Si and plastic substrates (PMMA and PVP), respectively. X-ray diffraction patterns of pentacene thin films showed reflections associated with highly ordered polycrystalline films and a coexistence of two polymorph phases classified by their d-spacing, d(001): 14.4 and 15.4 A.The dependence of the c-axis correlation length and the phase fraction on the film thickness and printing temperature were measured. A transition from the 15.4 A phase towards 14.4 A phase was also observed with increasing film thickness. An increase in the c-axis correlation length of approximately 12% ~16% was observed for Pn films transfer printed onto a PMMA coated PET substrate at 100~120 C as compared to as-grown Pn films on SiO2/Si substrates. The transfer printing method is shown to be an attractive for the fabrication of pentacene thin-film transistors on flexible substrates partly because of the resulting improvement in the quality of the pentacene film.
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Submitted 6 February, 2006;
originally announced February 2006.
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Extraordinary Phenomena in Semiconductor-Metal Hybrid Nanostructures Based on Bilinear Conformal Map**
Authors:
S. A. Solin
Abstract:
We have shown that bilinear conformal map** can be used to transform 4-lead internally shunted EMR semiconductor-metal hybrid structures to galvanomagnetically equivalent externally shunted 4 lead structures. The latter are compatible with the fabrication of nanoscale EMR devices while the former are not. Mapped rectangular EMR van der Pauw plate exhibit very large EMR values in both macroscop…
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We have shown that bilinear conformal map** can be used to transform 4-lead internally shunted EMR semiconductor-metal hybrid structures to galvanomagnetically equivalent externally shunted 4 lead structures. The latter are compatible with the fabrication of nanoscale EMR devices while the former are not. Mapped rectangular EMR van der Pauw plate exhibit very large EMR values in both macroscopic and nanoscopic form. We have also shown that the map** procedure applied in the case of EMR will also be applicable to other generalized EXX structures.
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Submitted 6 February, 2006;
originally announced February 2006.
