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Neural network execution using nicked DNA and microfluidics
Authors:
Arnav Solanki,
Zak Griffin,
Purab Ranjan Sutradhar,
Amlan Ganguly,
Marc D. Riedel
Abstract:
DNA has been discussed as a potential medium for data storage. Potentially it could be denser, could consume less energy, and could be more durable than conventional storage media such as hard drives, solid-state storage, and optical media. However, computing on data stored in DNA is a largely unexplored challenge. This paper proposes an integrated circuit (IC) based on microfluidics that can perf…
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DNA has been discussed as a potential medium for data storage. Potentially it could be denser, could consume less energy, and could be more durable than conventional storage media such as hard drives, solid-state storage, and optical media. However, computing on data stored in DNA is a largely unexplored challenge. This paper proposes an integrated circuit (IC) based on microfluidics that can perform complex operations such as artificial neural network (ANN) computation on data stored in DNA. It computes entirely in the molecular domain without converting data to electrical form, making it a form of in-memory computing on DNA. The computation is achieved by topologically modifying DNA strands through the use of enzymes called nickases. A novel scheme is proposed for representing data stochastically through the concentration of the DNA molecules that are nicked at specific sites. The paper provides details of the biochemical design, as well as the design, layout, and operation of the microfluidics device. Benchmarks are reported on the performance of neural network computation.
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Submitted 2 July, 2023;
originally announced July 2023.
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Greatly Enhanced Emission from Spin Defects in Hexagonal Boron Nitride Enabled by a Low-Loss Plasmonic Nano-Cavity
Authors:
Xiaohui Xu,
Abhishek. B. Solanki,
Demid Sychev,
Xingyu Gao,
Samuel Peana,
Aleksandr S. Baburin,
Karthik Pagadala,
Zachariah O. Martin,
Sarah N. Chowdhury,
Yong P. Chen,
Ilya A. Rodionov,
Alexander V. Kildishev,
Tongcang Li,
Pramey Upadhyaya,
Alexandra Boltasseva,
Vladimir M. Shalaev
Abstract:
Two-dimensional hexagonal boron nitride (hBN) has been known to host a variety of quantum emitters with properties suitable for a broad range of quantum photonic applications. Among them, the negatively charged boron vacancy (VB-) defect with optically addressable spin states has emerged recently due to its potential use in quantum sensing. Compared to spin defects in bulk crystals, VB- preserves…
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Two-dimensional hexagonal boron nitride (hBN) has been known to host a variety of quantum emitters with properties suitable for a broad range of quantum photonic applications. Among them, the negatively charged boron vacancy (VB-) defect with optically addressable spin states has emerged recently due to its potential use in quantum sensing. Compared to spin defects in bulk crystals, VB- preserves its spin coherence properties when placed at nanometer-scale distances from the hBN surface, enabling nanometer-scale quantum sensing. On the other hand, the low quantum efficiency of VB- has hindered its use in practical applications. Several studies have reported improving the overall quantum efficiency of VB- defects using plasmonic effects; however, the overall enhancements of up to 17 times reported to date are relatively modest. In this study, we explore and demonstrate much higher emission enhancements of VB- with ultralow-loss nano-patch antenna (NPA) structures. An overall intensity enhancement of up to 250 times is observed for NPA-coupled VB- defects. Since the laser spot exceeds the area of the NPA, where the enhancement occurs, the actual enhancement provided by the NPA is calculated to be ~1685 times, representing a significant increase over the previously reported results. Importantly, the optically detected magnetic resonance (ODMR) contrast is preserved at such exceptionally strong enhancement. Our results not only establish NPA-coupled VB- defects as high-resolution magnetic field sensors operating at weak laser powers, but also provide a promising approach to obtaining single VB- defects.
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Submitted 17 July, 2022;
originally announced July 2022.
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Correlative nanoscale imaging of strained hBN spin defects
Authors:
David Curie,
Jaron T. Krogel,
Lukas Cavar,
Abhishek Solanki,
Pramey Upadhyaya,
Tongcang Li,
Yun-Yi Pai,
Michael Chilcote,
Vasudevan Iyer,
Alex Puretzky,
Ilia Ivanov,
Mao-Hua Du,
Fernando Reboredo,
Benjamin Lawrie
Abstract:
Spin defects like the negatively charged boron vacancy color center ($V_B^-$) in hexagonal boron nitride (hBN) may enable new forms of quantum sensing with near-surface defects in layered van der Waals heterostructures. Here, we reveal the effect of strain associated with creases in hBN flakes on $V_B^-$ and $V_B$ color centers in hBN with correlative cathodoluminescence and photoluminescence micr…
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Spin defects like the negatively charged boron vacancy color center ($V_B^-$) in hexagonal boron nitride (hBN) may enable new forms of quantum sensing with near-surface defects in layered van der Waals heterostructures. Here, we reveal the effect of strain associated with creases in hBN flakes on $V_B^-$ and $V_B$ color centers in hBN with correlative cathodoluminescence and photoluminescence microscopies. We observe strong localized enhancement and redshifting of the $V_B^-$ luminescence at creases, consistent with density functional theory calculations showing $V_B^-$ migration toward regions with moderate uniaxial compressive strain. The ability to manipulate these spin defects with highly localized strain offers intriguing possibilities for future 2D quantum sensors.
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Submitted 18 March, 2022;
originally announced March 2022.
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High-contrast plasmonic-enhanced shallow spin defects in hexagonal boron nitride for quantum sensing
Authors:
Xingyu Gao,
Boyang Jiang,
Andres E. Llacsahuanga Allcca,
Kunhong Shen,
Mohammad A. Sadi,
Abhishek B. Solanki,
Peng Ju,
Zhu**g Xu,
Pramey Upadhyaya,
Yong P. Chen,
Sunil A. Bhave,
Tongcang Li
Abstract:
The recently discovered spin defects in hexagonal boron nitride (hBN), a layered van der Waals material, have great potential in quantum sensing. However, the photoluminescence and the contrast of the optically detected magnetic resonance (ODMR) of hBN spin defects are relatively low so far, which limits their sensitivity. Here we report a record-high ODMR contrast of 46$\%$ at room temperature, a…
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The recently discovered spin defects in hexagonal boron nitride (hBN), a layered van der Waals material, have great potential in quantum sensing. However, the photoluminescence and the contrast of the optically detected magnetic resonance (ODMR) of hBN spin defects are relatively low so far, which limits their sensitivity. Here we report a record-high ODMR contrast of 46$\%$ at room temperature, and simultaneous enhancement of the photoluminescence of hBN spin defects by up to 17-fold by the surface plasmon of a gold-film microwave waveguide. Our results are obtained with shallow boron vacancy spin defects in hBN nanosheets created by low-energy He$^+$ ion implantation, and a gold-film microwave waveguide fabricated by photolithography. We also explore the effects of microwave and laser powers on the ODMR, and improve the sensitivity of hBN spin defects for magnetic field detection. Our results support the promising potential of hBN spin defects for nanoscale quantum sensing.
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Submitted 25 June, 2021;
originally announced June 2021.
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Electric field control of interaction between magnons and quantum spin defects
Authors:
Abhishek Bharatbhai Solanki,
Simeon I. Bogdanov,
Avinash Rustagi,
Neil R. Dilley,
Tingting Shen,
Mohammad Mushfiqur Rahman,
Wenqi Tong,
Punyashloka Debashis,
Zhihong Chen,
Joerg Appenzeller,
Yong P. Chen,
Vladimir M. Shalaev,
Pramey Upadhyaya
Abstract:
Hybrid systems coupling quantum spin defects (QSD) and magnons can enable unique spintronic device functionalities and probes for magnetism. Here, we add electric field control of magnon-QSD coupling to such systems by integrating ferromagnet-ferroelectric multiferroic with nitrogen-vacancy (NV) center spins. Combining quantum relaxometry with ferromagnetic resonance measurements and analytical mo…
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Hybrid systems coupling quantum spin defects (QSD) and magnons can enable unique spintronic device functionalities and probes for magnetism. Here, we add electric field control of magnon-QSD coupling to such systems by integrating ferromagnet-ferroelectric multiferroic with nitrogen-vacancy (NV) center spins. Combining quantum relaxometry with ferromagnetic resonance measurements and analytical modeling, we reveal that the observed electric-field tuning results from ferroelectric polarization control of the magnon-generated fields at the NV. Exploiting the demonstrated control, we also propose magnon-enhanced hybrid electric field sensors with improved sensitivity.
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Submitted 24 May, 2021; v1 submitted 2 December, 2020;
originally announced December 2020.
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Coupled spin-charge dynamics in magnetic van der Waals heterostructures
Authors:
Avinash Rustagi,
Abhishek Solanki,
Yaroslav Tserkovnyak,
Pramey Upadhyaya
Abstract:
We present a phenomenological theory for coupled spin-charge dynamics in magnetic van der Waals heterostructures. The system studied consists of a layered antiferromagnet inserted into a capacitive vdW heterostructure. It has been recently demonstrated that charge do** in such layered antiferromagnets can modulate the strength, and even the sign, of exchange coupling between the layer magnetizat…
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We present a phenomenological theory for coupled spin-charge dynamics in magnetic van der Waals heterostructures. The system studied consists of a layered antiferromagnet inserted into a capacitive vdW heterostructure. It has been recently demonstrated that charge do** in such layered antiferromagnets can modulate the strength, and even the sign, of exchange coupling between the layer magnetizations. This provides a mechanism for electrically generating magnetization dynamics. The central result we predict here is that the magnetization dynamics reciprocally results in inducing charge dynamics. Such dynamics makes magnetic van der Waals heterostructures interesting candidates for spintronics applications. To this end, we also show that these systems can be used to convert sub-THz radiation induced magnetization dynamics into electrical signals.
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Submitted 3 December, 2019; v1 submitted 21 November, 2019;
originally announced November 2019.
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Domain Wall Magnetoresistance of Co Nanowires
Authors:
R. F. Sabirianov,
A. K. Solanki,
J. D. Burton,
S. S. Jaswal,
E. Y. Tsymbal
Abstract:
Using density functional theory implemented within a tight-binding linear muffin-tin orbital method we perform calculations of electronic, magnetic and transport properties of ferromagnetic free-standing fcc Co wires with diameters up to 1.5 nm. We show that finite-size effects play an important role in these nanowires resulting in oscillatory behavior of electronic charge and the magnetization…
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Using density functional theory implemented within a tight-binding linear muffin-tin orbital method we perform calculations of electronic, magnetic and transport properties of ferromagnetic free-standing fcc Co wires with diameters up to 1.5 nm. We show that finite-size effects play an important role in these nanowires resulting in oscillatory behavior of electronic charge and the magnetization as a function of the wire thickness, and a non-monotonic behavior of spin-dependent quantized conductance. We calculate the magnetoresistance (MR) of a domain wall (DW) modeled by a spin-spiral region of finite width sandwiched between two semi-infinite Co wire leads. We find that the DW MR decreases very rapidly, on the scale of a few interatomic layers, with the increasing DW width. The largest MR value of about 250% is predicted for an abrupt DW in the monatomic wire. We show that, for some energy values, the density of states and the conductance may be non-zero only in one spin channel, making the MR for the abrupt DW infinitely large. We also demonstrate that for the abrupt DW a large MR may occur due to the hybridization between two spin subbands across the DW interface. We do not find, however, such a behavior at the Fermi energy for the Co wires considered.
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Submitted 13 July, 2005; v1 submitted 11 June, 2005;
originally announced June 2005.
