Showing 1–22 of 22 results for author: Sofo, J O

Memory Function Representation for the Electrical Conductivity of Solids

Authors: Brett R. Green, Maria Troppenz, Santiago Rigamonti, Claudia Draxl, Jorge O. Sofo

Abstract: We derive a formula for the electrical conductivity of solids that includes relaxation, dissipation, and quantum coherence. The derivation is based on the Kubo formula, with a Mori memory function approach to include dissipation effects at all orders in the relaxation interaction. It offers a practical method to evaluate the conductivity with electronic-structure codes and avoids the complications… ▽ More We derive a formula for the electrical conductivity of solids that includes relaxation, dissipation, and quantum coherence. The derivation is based on the Kubo formula, with a Mori memory function approach to include dissipation effects at all orders in the relaxation interaction. It offers a practical method to evaluate the conductivity with electronic-structure codes and avoids the complications and limitations of the Kubo formula in the thermodynamic limit. The derivation of our formula provides a method applicable to other transport coefficients and correlation functions. △ Less

Submitted 6 October, 2021; originally announced October 2021.

Inversion Domain Boundaries in Wurzite GaN

Authors: M. M. F. Umar, Jorge O. Sofo

Abstract: We present two models for the atomic structure of inversion domain boundaries in wurzite GaN, that have not been discussed in existing literature. Using density functional theory, we find that one of these models has a lower formation energy than a previously proposed model known as Holt-$IDB$. Although this newly proposed model has a formation energy higher that the accepted lower energy structur… ▽ More We present two models for the atomic structure of inversion domain boundaries in wurzite GaN, that have not been discussed in existing literature. Using density functional theory, we find that one of these models has a lower formation energy than a previously proposed model known as Holt-$IDB$. Although this newly proposed model has a formation energy higher that the accepted lower energy structure, known as $IDB^*$, we argue that it can be formed under typical growth conditions. We present evidence that it may have been already observed in experiments, albeit misidentified as Holt-$IDB$. Our analysis was facilitated by a convenient notation, that we introduced, to characterize these models; it is based on the mismatch in crystal stacking sequence across the $\{10\overline{1}0\}$ plane. Additionally, we introduce an improved method to calculate energies of certain domain walls that challenge the periodic boundary conditions needed for plane-wave density functional theory methods. This new method provides improved estimations of domain wall energies. △ Less

Submitted 28 March, 2021; v1 submitted 7 January, 2021; originally announced January 2021.

Journal ref: Phys. Rev. B 103, 165305 (2021)

Partial Order-Disorder Transition Driving Closure of Band Gap: Example of Thermoelectric Clathrates

Authors: Maria Troppenz, Santiago Rigamonti, Jorge O. Sofo, Claudia Draxl

Abstract: On the quest for efficient thermoelectrics, semiconducting behavior is a targeted property. Yet, this is often difficult to achieve due to the complex interplay between electronic structure, temperature, and disorder. We find this to be the case for the thermoelectric clathrate Ba$_8$Al$_{16}$Si$_{30}$: Although this material exhibits a band gap in its groundstate, a temperature-driven partial ord… ▽ More On the quest for efficient thermoelectrics, semiconducting behavior is a targeted property. Yet, this is often difficult to achieve due to the complex interplay between electronic structure, temperature, and disorder. We find this to be the case for the thermoelectric clathrate Ba$_8$Al$_{16}$Si$_{30}$: Although this material exhibits a band gap in its groundstate, a temperature-driven partial order-disorder transition leads to its effective closing. This finding is enabled by a novel approach to calculate the temperature-dependent effective band structure of alloys. Our method fully accounts for the effects of short-range order and can be applied to complex alloys with many atoms in the primitive cell, without relying on effective medium approximations. △ Less

Submitted 23 September, 2020; originally announced September 2020.

Comments: 5 pages, 3 figures

Landau Level Phases in Bilayer Graphene under Pressure at Charge Neutrality

Authors: Brett R. Green, Jorge O. Sofo

Abstract: Bilayer graphene in a magnetic field hosts a variety of ordered phases built from eight Landau levels close in energy to the neutrality point. These levels are characterized by orbital $n=0,1$, valley $ξ=+,-$ and spin $σ=\uparrow,\downarrow$; their relative energies depend strongly on the Coulomb interaction, magnetic field, and interlayer bias. We treat interactions at the Hartree-Fock level, inc… ▽ More Bilayer graphene in a magnetic field hosts a variety of ordered phases built from eight Landau levels close in energy to the neutrality point. These levels are characterized by orbital $n=0,1$, valley $ξ=+,-$ and spin $σ=\uparrow,\downarrow$; their relative energies depend strongly on the Coulomb interaction, magnetic field, and interlayer bias. We treat interactions at the Hartree-Fock level, including the effects of metallic gates, layer separation, spatial extent of the $p_z$ orbitals, all Slonczewski-Weiss-McClure tight-binding parameters, and pressure. We obtain the ground state as function of the applied magnetic field, bias, and pressure. The gates, layer separation and extent of the $p_z$ orbitals weaken the Coulomb interaction at different length scales; these effects distort the phase diagram but do not change its topology. However, previously-predicted continuous transitions become discontinuous when all tight-binding parameters are included nonperturbatively. We find that pressure increases the importance of the noninteracting scale with respect to the Coulomb energy, which drives phase transitions to occur at lower fields. This brings two orbitally polarized states not yet predicted or observed into the experimentally accessible region of the phase diagram, in addition to previously-identified valley-, spin-, and partially orbitally polarized states. △ Less

Submitted 13 February, 2020; originally announced February 2020.

Comments: Main paper: 27 pages, 5 figures; supplemental material: 12 pages, 3 figures

Journal ref: Phys. Rev. B 101, 195432 (2020)

Low energy phases of bilayer Bi predicted by structure search in two dimensions

Authors: Sobhit Singh, Zeila Zanolli, Maximilian Amsler, B. Belhadji, Jorge O. Sofo, Matthieu J. Verstraete, Aldo H. Romero

Abstract: We employ an ab-initio structure search algorithm to explore the configurational space of Bi in quasi two dimensions. A confinement potential restricts the movement of atoms within a pre-defined thickness during structure search calculations within the minima hop** method to find the stable and metastable forms of bilayer Bi. In addition to recovering the two known low-energy structures (puckere… ▽ More We employ an ab-initio structure search algorithm to explore the configurational space of Bi in quasi two dimensions. A confinement potential restricts the movement of atoms within a pre-defined thickness during structure search calculations within the minima hop** method to find the stable and metastable forms of bilayer Bi. In addition to recovering the two known low-energy structures (puckered monoclinic and buckled hexagonal), our calculations predict three new structures of bilayer Bi. We call these structures the $α$, $β$, and $γ$ phases of bilayer Bi, which are, respectively, 63, 72, and 83 meV/atom higher in energy than that of the monoclinic ground state, and thus potentially synthesizable using appropriate substrates. We also compare the structural, electronic, and vibrational properties of the different phases. The puckered monoclinic, buckled hexagonal, and $β$ phases exhibit a semiconducting energy gap, whereas $α$ and $γ$ phases are metallic. We notice an unusual Mexican-hat type band dispersion leading to a van Hove singularity in the buckled hexagonal bilayer Bi. Notably, we find symmetry-protected topological Dirac points in the electronic spectrum of the $γ$ phase. The new structures suggest that bilayer Bi provides a novel playground to study distortion-mediated metal-insulator phase transitions. △ Less

Submitted 15 January, 2019; originally announced January 2019.

Journal ref: J. Phys. Chem. Lett. 2019, 10, 23, 7324-7332

Bilayer graphene under pressure: Electron-hole Symmetry Breaking, Valley Hall Effect, and Landau Levels

Authors: F Munoz, H. P. Ojeda Collado, Gonzalo Usaj, Jorge O. Sofo, C. A. Balseiro

Abstract: The electronic structure of bilayer graphene under pressure develops very interesting features with an enhancement of the trigonal war** and a splitting of the parabolic touching bands at the K point of the reciprocal space into four Dirac cones, one at K and three along the T symmetry lines. As pressure is increased, these cones separate in reciprocal space and in energy, breaking the electron-… ▽ More The electronic structure of bilayer graphene under pressure develops very interesting features with an enhancement of the trigonal war** and a splitting of the parabolic touching bands at the K point of the reciprocal space into four Dirac cones, one at K and three along the T symmetry lines. As pressure is increased, these cones separate in reciprocal space and in energy, breaking the electron-hole symmetry. Due to their energy separation, their opposite Berry curvature can be observed in valley Hall effect experiments and in the structure of the Landau levels. Based on the electronic structure obtained by Density Functional Theory, we develop a low energy Hamiltonian that describes the effects of pressure on measurable quantities such as the Hall conductivity and the Landau levels of the system. △ Less

Submitted 4 February, 2016; originally announced February 2016.

Comments: 11 pages, 9 figures

Journal ref: Phys. Rev. B 93, 235443 (2016)

An Investigation of Machine Learning Methods Applied to Structure Prediction in Condensed Matter

Authors: William J. Brouwer, James D. Kubicki, Jorge O. Sofo, C. Lee Giles

Abstract: Materials characterization remains a significant, time-consuming undertaking. Generally speaking, spectroscopic techniques are used in conjunction with empirical and ab-initio calculations in order to elucidate structure. These experimental and computational methods typically require significant human input and interpretation, particularly with regards to novel materials. Recently, the application… ▽ More Materials characterization remains a significant, time-consuming undertaking. Generally speaking, spectroscopic techniques are used in conjunction with empirical and ab-initio calculations in order to elucidate structure. These experimental and computational methods typically require significant human input and interpretation, particularly with regards to novel materials. Recently, the application of data mining and machine learning to problems in material science have shown great promise in reducing this overhead. In the work presented here, several aspects of machine learning are explored with regards to characterizing a model material, titania, using solid-state Nuclear Magnetic Resonance (NMR). Specifically, a large dataset is generated, corresponding to NMR $^{47}$Ti spectra, using ab-initio calculations for generated TiO$_2$ structures. Principal Components Analysis (PCA) reveals that input spectra may be compressed by more than 90%, before being used for subsequent machine learning. Two key methods are used to learn the complex map** between structural details and input NMR spectra, demonstrating excellent accuracy when presented with test sample spectra. This work compares Support Vector Regression (SVR) and Artificial Neural Networks (ANNs), as one step towards the construction of an expert system for solid state materials characterization. △ Less

Submitted 14 May, 2014; originally announced May 2014.

Comments: 21 pages, 4 figures

Impurity State and Variable Range Hop** Conduction in Graphene

Authors: Sang-Zi Liang, Jorge O. Sofo

Abstract: The variable range hop** theory, as formulated for exponentially localized impurity states, does not necessarily apply in the case of graphene with covalently attached impurities. We analyze the localization of impurity states in graphene using the nearest-neighbor, tight-binding model of an adatom-graphene system with Green's function perturbation methods. The amplitude of the impurity state wa… ▽ More The variable range hop** theory, as formulated for exponentially localized impurity states, does not necessarily apply in the case of graphene with covalently attached impurities. We analyze the localization of impurity states in graphene using the nearest-neighbor, tight-binding model of an adatom-graphene system with Green's function perturbation methods. The amplitude of the impurity state wave function is determined to decay as a power law with exponents depending on sublattice, direction, and the impurity species. We revisit the variable range hop** theory in view of this result and find that the conductivity depends as a power law of the temperature with an exponent related to the localization of the wave function. We show that this temperature dependence is in agreement with available experimental results. △ Less

Submitted 21 December, 2012; v1 submitted 24 August, 2012; originally announced August 2012.

Journal ref: Phys. Rev. Lett. 109, 256601 (2012)

Novel substrates for Helium adsorption: Graphane and Graphene-Fluoride

Authors: L. Reatto, M. Nava, D. E. Galli, C. Billman, J. O. Sofo, M. W. Cole

Abstract: The discovery of fullerenes has stimulated extensive exploration of the resulting behavior of adsorbed films. Our study addresses the planar substrates graphene-fluoride (GF) and graphane (GH) in comparison to graphene. We present initial results concerning the potential energy, energy bands and low density behavior of 4He and 3He films on such different surfaces. For example, while graphene prese… ▽ More The discovery of fullerenes has stimulated extensive exploration of the resulting behavior of adsorbed films. Our study addresses the planar substrates graphene-fluoride (GF) and graphane (GH) in comparison to graphene. We present initial results concerning the potential energy, energy bands and low density behavior of 4He and 3He films on such different surfaces. For example, while graphene presents an adsorption potential that is qualitatively similar to that on graphite, GF and GH yield potentials with different symmetry, a number of adsorption sites double that on graphene/graphite and a larger corrugation for the adatom. In the case of GF, the lowest energy band width is similar to that on graphite but the He atom has a significantly larger effective mass and the adsorption energy is about three time that on graphite. Implications concerning the monolayer phase diagram of 4He are explored with the exact path integral ground state method. A commensurate ordered state similar to the sqrt{3} x sqrt{3} R30^o state on graphite is found the be unstable both on GF and on GH. The ground states of submonolayer 4He on both GF and GH are superfluids with a Bose Einstein condensate fraction of about 10%. △ Less

Submitted 13 April, 2012; originally announced April 2012.

Comments: 6 pages, 3 figures, LT26 proceedings, accepted for publication in Journal of Physics: Conference Series

Magnetic Structure of Hydrogen Induced Defects on Graphene

Authors: J. O. Sofo, Gonzalo Usaj, P. S. Cornaglia, A. M. Suarez, A. D. Hernández-Nieves, C. A. Balseiro

Abstract: Using density functional theory (DFT), Hartree-Fock, exact diagonalization, and numerical renormalization group methods we study the electronic structure of diluted hydrogen atoms chemisorbed on graphene. A comparison between DFT and Hartree-Fock calculations allows us to identify the main characteristics of the magnetic structure of the defect. We use this information to formulate an Anderson-Hub… ▽ More Using density functional theory (DFT), Hartree-Fock, exact diagonalization, and numerical renormalization group methods we study the electronic structure of diluted hydrogen atoms chemisorbed on graphene. A comparison between DFT and Hartree-Fock calculations allows us to identify the main characteristics of the magnetic structure of the defect. We use this information to formulate an Anderson-Hubbard model that captures the main physical ingredients of the system, while still allowing a rigorous treatment of the electronic correlations. We find that the large hydrogen-carbon hybridization puts the structure of the defect half-way between the one corresponding to an adatom weakly coupled to pristine graphene and a carbon vacancy. The impurity's magnetic moment leaks into the graphene layer where the electronic correlations on the C atoms play an important role in stabilizing the magnetic solution. Finally, we discuss the implications for the Kondo effect. △ Less

Submitted 12 December, 2011; originally announced December 2011.

Comments: 10 pages, 10 figs

Journal ref: Phys. Rev. B 85, 115405 (2012)

Electrical Control of the Chemical Bonding of Fluorine on Graphene

Authors: J. O. Sofo, A. M. Suarez, Gonzalo Usaj, P. S. Cornaglia, A. D. Hernández-Nieves, C. A. Balseiro

Abstract: We study the electronic structure of diluted F atoms chemisorbed on graphene using density functional theory calculations. We show that the nature of the chemical bonding of a F atom adsorbed on top of a C atom in graphene strongly depends on carrier do**. In neutral samples the F impurities induce a sp^3-like bonding of the C atom below, generating a local distortion of the hexagonal lattice. A… ▽ More We study the electronic structure of diluted F atoms chemisorbed on graphene using density functional theory calculations. We show that the nature of the chemical bonding of a F atom adsorbed on top of a C atom in graphene strongly depends on carrier do**. In neutral samples the F impurities induce a sp^3-like bonding of the C atom below, generating a local distortion of the hexagonal lattice. As the graphene is electron-doped, the C atom retracts back to the graphene plane and for high do** (10^14 cm^-2) its electronic structure corresponds to a nearly pure sp^2 configuration. We interpret this sp^3-sp^2 do**-induced crossover in terms of a simple tight binding model and discuss the physical consequences of this change. △ Less

Submitted 24 January, 2011; originally announced January 2011.

Comments: 4 pages, 4 figures. Accepted in Phys. Rev. B. Rapid Comm

Journal ref: Phys. Rev. B 83, 081411(R) (2011)

Photoluminescence from nanocrystalline graphite monofluoride

Authors: Bei Wang, Justin R. Sparks, Humberto R. Gutierrez, Fujio Okino, Qingzhen Hao, Youjian Tang, Vincent H. Crespi, Jorge O. Sofo, Jun Zhu

Abstract: We synthesize and study the structural and optical properties of nanocrystalline graphene monofluoride and graphite monofluoride, which are carbon-based wide bandgap materials. Using laser excitations 2.41 - 5.08 eV, we identify six emission modes of graphite monofluoride, spanning the visible spectrum from red to violet. The energy and linewidth of the modes point to defect-induced midgap states… ▽ More We synthesize and study the structural and optical properties of nanocrystalline graphene monofluoride and graphite monofluoride, which are carbon-based wide bandgap materials. Using laser excitations 2.41 - 5.08 eV, we identify six emission modes of graphite monofluoride, spanning the visible spectrum from red to violet. The energy and linewidth of the modes point to defect-induced midgap states as the source of the photoemission. We discuss possible candidates. Our findings open the window to electro-optical applications of graphene fluoride. △ Less

Submitted 29 July, 2010; originally announced July 2010.

Comments: 11 pages including supporting information, 2 figures

Journal ref: Applied Physics Letters, 97, 141915 (2010)

Reversible Fluorination of Graphene: towards a Two-Dimensional Wide Bandgap Semiconductor

Authors: S. -H. Cheng, K. Zou, F. Okino, H. R. Gutierrez, A. Gupta, N. Shen, P. C. Eklund, J. O. Sofo, J. Zhu

Abstract: We report the synthesis and evidence of graphene fluoride, a two-dimensional wide bandgap semiconductor derived from graphene. Graphene fluoride exhibits hexagonal crystalline order and strongly insulating behavior with resistance exceeding 10 G$Ω$ at room temperature. Electron transport in graphene fluoride is well described by variable-range hop** in two dimensions due to the presence of local… ▽ More We report the synthesis and evidence of graphene fluoride, a two-dimensional wide bandgap semiconductor derived from graphene. Graphene fluoride exhibits hexagonal crystalline order and strongly insulating behavior with resistance exceeding 10 G$Ω$ at room temperature. Electron transport in graphene fluoride is well described by variable-range hop** in two dimensions due to the presence of localized states in the band gap. Graphene obtained through the reduction of graphene fluoride is highly conductive, exhibiting a resistivity of less than 100 k$Ω$ at room temperature. Our approach provides a new path to reversibly engineer the band structure and conductivity of graphene for electronic and optical applications. △ Less

Submitted 1 May, 2010; originally announced May 2010.

Comments: 7 pages, 5 figures, revtex, to appear in PRB

Journal ref: Phys. Rev. B 81, 205435 (2010)

Graphane: a two-dimensional hydrocarbon

Authors: Jorge O. Sofo, Ajay S. Chaudhari, Greg D. Barber

Abstract: We predict the stability of a new extended two-dimensional hydrocarbon on the basis of first-principles total energy calculations. The compound that we call graphane is a fully saturated hydrocarbon derived from a single graphene sheet with formula CH. All of the carbon atoms are in sp3 hybridization forming a hexagonal network and the hydrogen atoms are bonded to carbon on both sides of the pla… ▽ More We predict the stability of a new extended two-dimensional hydrocarbon on the basis of first-principles total energy calculations. The compound that we call graphane is a fully saturated hydrocarbon derived from a single graphene sheet with formula CH. All of the carbon atoms are in sp3 hybridization forming a hexagonal network and the hydrogen atoms are bonded to carbon on both sides of the plane in an alternating manner. Graphane is predicted to be stable with a binding energy comparable to other hydrocarbons such as benzene, cyclohexane, and polyethylene. We discuss possible routes for synthesizing graphane and potential applications as a hydrogen storage material and in two dimensional electronics. △ Less

Submitted 27 June, 2006; originally announced June 2006.

Journal ref: Phys. Rev. B 75, 153401_4 (2007)

Fully retarded van der Waals interaction between dielectric nanoclusters

Authors: Hye-Young Kim, Jorge O. Sofo, Darrell Velegol, Milton W. Cole

Abstract: The fully retarded dispersion interaction between an atom and a cluster or between two clusters is calculated. Results obtained with two different methods are compared. One is to consider a cluster as a collection of many atoms and evaluate the sum of two-body and three-body interatomic interactions, a common assumption. The other method, valid at large separation, is to consider each cluster as… ▽ More The fully retarded dispersion interaction between an atom and a cluster or between two clusters is calculated. Results obtained with two different methods are compared. One is to consider a cluster as a collection of many atoms and evaluate the sum of two-body and three-body interatomic interactions, a common assumption. The other method, valid at large separation, is to consider each cluster as a point particle, characterized by a polarizability tensor, and evaluate the inter-cluster interaction. This method employs the static polarizability, evaluated by including all many-body (MB) intra-cluster atomic interactions self-consistently, which yields the full inter-cluster interaction, including all MB terms. A comparison of the results from the two methods reveals that the contribution of the higher-than-three-body MB interactions is always attractive and non-negligible, with a relative importance that varies with geometry. The procedure is quite general and is applicable to any shape or size of dielectric clusters, in principle. We present numerical results for clusters composed of atoms with polarizability consistent with silica, for which the higher-than-three-body MB correction term can be as high as 42% of the atomic pair-wise sum. The full result is quite sensitive to the anisotropic structure of the cluster, in contrast to the result found in the additive case, which is orientation independent. We also present a power law expansion of the total van der Waals (VDW) interaction as a series of n-body interaction terms. △ Less

Submitted 20 March, 2006; originally announced March 2006.

Comments: 36 pages, 14 figures

Static Polarizabilities of Dielectric Nanoclusters

Authors: Hye-Young Kim, Jorge O. Sofo, Darrell Velegol, Milton W. Cole, Gautam Mukhopadhyay

Abstract: A cluster consisting of many atoms or molecules may be considered, in some circustances, to be a single large molecule with a well defined polarizability. Once the polarizability of such a cluster is known, one can evaluate certain properties, e.g. the cluster's van der Waals interactions, using expressions derived for molecules. In the present work, we evaluate the static polarizability of a cl… ▽ More A cluster consisting of many atoms or molecules may be considered, in some circustances, to be a single large molecule with a well defined polarizability. Once the polarizability of such a cluster is known, one can evaluate certain properties, e.g. the cluster's van der Waals interactions, using expressions derived for molecules. In the present work, we evaluate the static polarizability of a cluster using a microscopic method that is exact within the linear and dipolar approximations. Numerical examples are presented for various shapes and sizes of clusters composed of identical atoms, where the term "atom" actually refers to a generic constituent, which could be any polarizable entity. The results for the cluster's polarizabilities are compared with those obtained by assuming simple additivity of the constituents' atomic polarizabilities; in many cases, the difference is large, demonstrating the inadequacy of the additivity approximation. Comparison is made (for symmetrical geometries) with results obtained from continuum models of the polarizability. Also, the surface effects due to the nonuniform local field near a surface or edge are shown to be significant. △ Less

Submitted 15 August, 2005; originally announced August 2005.

Comments: 44 pages, 5 tables, 20 figures, A shortened version is to be published in Phys. Rev. A

Linear optical properties of solids within the full-potential linearized augmented planewave method

Authors: C. Ambrosch-Draxl, J. O. Sofo

Abstract: We present a scheme for the calculation of linear optical properties by the all-electron full-potential linearized augmented planewave (LAPW) method. A summary of the theoretical background for the derivation of the dielectric tensor within the random-phase approximation is provided together with symmetry considerations and the relation between the optical constants. The momentum matrix elements… ▽ More We present a scheme for the calculation of linear optical properties by the all-electron full-potential linearized augmented planewave (LAPW) method. A summary of the theoretical background for the derivation of the dielectric tensor within the random-phase approximation is provided together with symmetry considerations and the relation between the optical constants. The momentum matrix elements are evaluated in detail for the LAPW basis, and the interband as well as the intraband contributions to the dielectric tensor are given. Results are presented for the metals aluminum and gold, where we crosscheck our results by sumrules. We find that the optical spectra can be extremely sensitive to the Brillouin zone sampling. For gold, the influence of relativistic effects on the dielectic function is investigated. It is shown that the scalar-relativistic effect is much more important than spin-orbit coupling. The interpretability of the Kohn-Sham eigenstates in terms of excited states is discussed. △ Less

Submitted 20 February, 2004; originally announced February 2004.

Electronic structure of the pyrochlore metals Cd2Os2O7 and Cd2Re2O7

Authors: D. J. Singh, P. Blaha, K. Schwarz, J. O. Sofo

Abstract: First principles density functional calculations within the local spin density approximation (LSDA) and the generalized gradient approximation (GGA) are reported for pyrochlore Cd$_2$Os$_2$O$_7$ and Cd$_{2}$Re$_{2}$O$_7$. The transition metal $t_{2g}$ manifolds are found to be well separated in energy from the O $2p$ bands and from the higher lying $e_g$ and Cd derived bands. The active electron… ▽ More First principles density functional calculations within the local spin density approximation (LSDA) and the generalized gradient approximation (GGA) are reported for pyrochlore Cd$_2$Os$_2$O$_7$ and Cd$_{2}$Re$_{2}$O$_7$. The transition metal $t_{2g}$ manifolds are found to be well separated in energy from the O $2p$ bands and from the higher lying $e_g$ and Cd derived bands. The active electronic structure in the $t_{2g}$ manifold near the Fermi energy, $E_F$ is found to be significantly modified by spin orbit interactions, which we include. Both materials show semi-metallic band structures, in which the $E_F$ lies in an pseudogap. The band structure of Cd$_2$Os$_2$O$_7$ near $E_F$ is dominated by very heavy hole and electron bands, though at $E_F$ the electron sections are lighter. Cd$_{2}$Re$_{2}$O$_7$ has heavy hole bands but moderate mass electron states. The results are discussed in terms of measured transport and thermodynamic properties of these compounds as well as the very different ground states of these two materials. △ Less

Submitted 14 August, 2001; originally announced August 2001.

Comments: 7 pages

Metal-insulator transition in the double perovskites

Authors: A. A. Aligia, P. Petrone, J. O. Sofo, B. Alascio

Abstract: We construct an effective Hamiltonian for the motion of electrons among the transition metal ions of ordered double perovskites like Sr2FeMoO6. in which strong intra-atomic Coulomb repulsion U is present in only one of the inequivalent transition metal sites. Using a slave-boson formalism, we construct a phase diagram which describes a charge transfer transition between insulating and metallic b… ▽ More We construct an effective Hamiltonian for the motion of electrons among the transition metal ions of ordered double perovskites like Sr2FeMoO6. in which strong intra-atomic Coulomb repulsion U is present in only one of the inequivalent transition metal sites. Using a slave-boson formalism, we construct a phase diagram which describes a charge transfer transition between insulating and metallic behavior as the parameters of the model are changed. The parameters for Sr2FeMoO6 are estimated from first-principles calculations and a transition to the insulating state with negative pressure is obtained. △ Less

Submitted 29 May, 2001; originally announced May 2001.

Comments: 5 pages, 3 figures, submitted to Phys. Rev. B

Journal ref: Phys. Rev. B 64, 092414 (2001)

Photoemission study of the skutterudite compounds Co(Sb$_{1-x}$Te$_{x}$)$_3$ and RhSb$_3$

Authors: H. Ishii, K. Okazaki, A. Fujimori, Y. Nagamoto, T. Koyanagi, J. O. Sofo

Abstract: We have studied the electronic structure of the skutterudite compounds Co(Sb$_{1-x}$Te$_{x}$)$_3$ (x= 0, 0.02, 0.04) by photoemission spectroscopy. Valence-band spectra revealed that Sb 5p states are dominant near the Fermi level and are hybridized with Co 3d states just below it. The spectra of {\it p}-type CoSb$_3$ are well reproduced by the band-structure calculation, which suggests that the… ▽ More We have studied the electronic structure of the skutterudite compounds Co(Sb$_{1-x}$Te$_{x}$)$_3$ (x= 0, 0.02, 0.04) by photoemission spectroscopy. Valence-band spectra revealed that Sb 5p states are dominant near the Fermi level and are hybridized with Co 3d states just below it. The spectra of {\it p}-type CoSb$_3$ are well reproduced by the band-structure calculation, which suggests that the effect of electron correlations is not strong in CoSb$_3$. When Te is substituted for Sb and n-type carriers are doped into CoSb$_3$, the spectra are shifted to higher binding energies as predicted by the rigid-band model. From this shift and the free-electron model for the conduction and valence bands, we have estimated the band gap of CoSb$_3$ to be 0.03-0.04 eV, which is consistent with the result of transport measurements. Photoemission spectra of RhSb$_3$ have also been measured and revealed similarities to and differences from those of CoSb$_3$. △ Less

Submitted 19 March, 2001; v1 submitted 16 March, 2001; originally announced March 2001.

Comments: 6 pages, 7 figures

Journal ref: J. Phys. Soc. Jpn. 71, 2271 (2002).

Diffusion and Transport Coefficients in Synthetic Opals

Authors: J. O. Sofo, G. D. Mahan

Abstract: Opals are structures composed of the closed packing of spheres in the size range of nano-to-micro meter. They are sintered to create small necks at the points of contact. We have solved the diffusion problem in such structures. The relation between the diffusion coefficient and the termal and electrical conductivity makes possible to estimate the transport coefficients of opal structures. We est… ▽ More Opals are structures composed of the closed packing of spheres in the size range of nano-to-micro meter. They are sintered to create small necks at the points of contact. We have solved the diffusion problem in such structures. The relation between the diffusion coefficient and the termal and electrical conductivity makes possible to estimate the transport coefficients of opal structures. We estimate this changes as function of the neck size and the mean-free path of the carriers. The theory presented is also applicable to the diffusion problem in other periodic structures. △ Less

Submitted 21 October, 1999; originally announced October 1999.

Comments: Submitted to PRB

Multilayer Thermionic Refrigerator and Generator

Authors: G. D. Mahan, J. O. Sofo, M. Bartkowiak

Abstract: A new method of refrigeration is proposed. Cooling is obtained by thermionic emission of electrons over periodic barriers in a multilayer geometry. These could be either Schottky barriers between metals and semiconductors or else barriers in a semiconductor superlattice. The same device is an efficient power generator. A complete theory is provided. A new method of refrigeration is proposed. Cooling is obtained by thermionic emission of electrons over periodic barriers in a multilayer geometry. These could be either Schottky barriers between metals and semiconductors or else barriers in a semiconductor superlattice. The same device is an efficient power generator. A complete theory is provided. △ Less

Submitted 19 January, 1998; originally announced January 1998.

Comments: 17 pages with 5 postscript figures, submitted to J. Appl. Phys

Report number: Report CNEA-CAB 34-01-98