Showing 1–4 of 4 results for author: Sobanska, M

Pseudomagnetic fields and strain engineering: graphene on GaN nanowires

Authors: Jakub Kierdaszuk, Paweł Dąbrowski, Maciej Rogala, Paweł Krukowski, Aleksandra Przewłoka, Aleksandra Krajewska, Wawrzyniec Kaszub, Marta Sobanska, Zbigniew R. Zytkiewicz, Vitaly Z. Zubialevich, Paweł J. Kowalczyk, Andrzej Wysmołek, Johannes Binder, Aneta Drabińska

Abstract: Gallium nitride nanowire and nanorod substrates with different morphology are prospective platforms allowing to control the local strain distribution in graphene films top of them, resulting in an induction of pseudomagnetic fields. Atomic force microscopy measurements performed in a HybriD mode complemented by scanning electron microscopy allow for a detailed visualization of the strain distribut… ▽ More Gallium nitride nanowire and nanorod substrates with different morphology are prospective platforms allowing to control the local strain distribution in graphene films top of them, resulting in an induction of pseudomagnetic fields. Atomic force microscopy measurements performed in a HybriD mode complemented by scanning electron microscopy allow for a detailed visualization of the strain distribution on graphene surface. Graphene in direct contact with supporting regions is tensile strained, while graphene located in-between is characterized by lower strain. Characteristic tensile strained wrinkles also appear in the areas between the supporting regions. A detailed analysis of the strain distribution shows positive correlation between strain gradient and distances between borders of supporting regions. These results are confirmed by Raman spectroscopy by analysis the D' band intensity, which is affected by an enhancement of intravalley scattering. Furthermore, scanning tunneling spectroscopy shows a local modification of the density of states near the graphene wrinkle and weak localization measurements indicate the enhancement of pseudomagnetic field-induced scattering. Therefore, we show that nanowire and nanorod substrates provide strain engineering and induction of pseudomagnetic fields in graphene. The control of graphene morphology by a modification of distances between supporting regions is promising for both further fundamental research and the exploration of innovative ways to fabricate pseudomagnetic field-based devices like sensors or filters. △ Less

Submitted 31 July, 2021; originally announced August 2021.

Properties of graphene deposited on GaN nanowires: influence of nanowire roughness, self-induced nanogating and defects

Authors: Jakub Kierdaszuk, Piotr Kaźmierczak, Justyna Grzonka, Aleksandra Krajewska, Aleksandra Przewłoka, Wawrzyniec Kaszub, Zbigniew R. Zytkiewicz, Marta Sobanska, Maria Kamińska, Andrzej Wysmołek, Aneta Drabińska

Abstract: We present detailed Raman studies of graphene deposited on gallium nitride nanowires with different variations in height. Our results show that different density and height of nanowires being in contact with graphene impact graphene properties like roughness, strain and carrier concentration as well as density and type of induced defects. Detailed analysis of Raman spectra of graphene deposited on… ▽ More We present detailed Raman studies of graphene deposited on gallium nitride nanowires with different variations in height. Our results show that different density and height of nanowires being in contact with graphene impact graphene properties like roughness, strain and carrier concentration as well as density and type of induced defects. Detailed analysis of Raman spectra of graphene deposited on different nanowire substrates shows that bigger differences in nanowires height increase graphene strain, while higher number of nanowires in contact with graphene locally reduce the strain. Moreover, the value of graphene carrier concentration is found to be correlated with the density of nanowires in contact with graphene. Analysis of intensity ratios of Raman G, D and D' bands enable to trace how nanowire substrate impacts the defect concentration and type. The lowest concentration of defects is observed for graphene deposited on nanowires of the lowest density. Contact between graphene and densely arranged nanowires leads to a large density of vacancies. On the other hand, grain boundaries are the main type of defects in graphene on rarely distributed nanowires. Our results also show modification of graphene carrier concentration and strain by different types of defects present in graphene. △ Less

Submitted 8 October, 2018; originally announced October 2018.

Surface-enhanced Raman scattering in graphene deposited on Al$_x$Ga$_{1-x}$N/GaN axial heterostructure nanowires

Authors: Jakub Kierdaszuk, Mateusz Tokarczyk, Krzysztof M. Czajkowski, Rafał Bożek, Aleksandra Krajewska, Aleksandra Przewłoka, Wawrzyniec Kaszub, Marta Sobanska, Zbigniew R. Zytkiewicz, Grzegorz Kowalski, Tomasz J. Antosiewicz, Maria Kamińska, Andrzej Wysmołek, Aneta Drabińska

Abstract: The surface-enhanced Raman scattering in graphene deposited on AlxGa1-xN/GaN axial heterostructure nanowires was investigated. The intensity of graphene Raman spectra was found not to be correlated with aluminium content. Analysis of graphene Raman bands parameters, KPFM and electroreflectance showed a screening of polarization charges. Theoretical calculations showed that plasmon resonance in gra… ▽ More The surface-enhanced Raman scattering in graphene deposited on AlxGa1-xN/GaN axial heterostructure nanowires was investigated. The intensity of graphene Raman spectra was found not to be correlated with aluminium content. Analysis of graphene Raman bands parameters, KPFM and electroreflectance showed a screening of polarization charges. Theoretical calculations showed that plasmon resonance in graphene is far beyond the Raman spectral range. This excludes the presence of an electromagnetic mechanism of SERS and therefore suggests the chemical mechanism of enhancement. △ Less

Submitted 6 August, 2018; originally announced August 2018.

Surface-enhanced Raman scattering of graphene caused by self-induced nanogating by GaN nanowire array

Authors: Jakub Kierdaszuk, Piotr Kaźmierczak, Rafał Bożek, Justyna Grzonka, Aleksandra Krajewska, Zbigniew R. Zytkiewicz, Marta Sobanska, Kamil Klosek, Agnieszka Wołoś, Maria Kamińska, Andrzej Wysmołek, Aneta Drabińska

Abstract: A constant height of gallium nitride (GaN) nanowires with graphene deposited on them is shown to have a strong enhancement of Raman scattering, whilst variable height nanowires fail to give such an enhancement. Scanning electron microscopy reveals a smooth graphene surface which is present when the GaN nanowires are uniform, whereas graphene on nanowires with substantial height differences is obse… ▽ More A constant height of gallium nitride (GaN) nanowires with graphene deposited on them is shown to have a strong enhancement of Raman scattering, whilst variable height nanowires fail to give such an enhancement. Scanning electron microscopy reveals a smooth graphene surface which is present when the GaN nanowires are uniform, whereas graphene on nanowires with substantial height differences is observed to be pierced and stretched by the uppermost nanowires. The energy shifts of the characteristic Raman bands confirms that these differences in the nanowire height has a significant impact on the local graphene strain and the carrier concentration. The images obtained by Kelvin probe force microscopy show clearly that the carrier concentration in graphene is modulated by the nanowire substrate and dependent on the nanowire density. Therefore, the observed surface enhanced Raman scattering for graphene deposited on GaN nanowires of comparable height is triggered by self-induced nano-gating to the graphene. However, no clear correlation of the enhancement with the strain or the carrier concentration of graphene was discovered. △ Less

Submitted 7 November, 2017; v1 submitted 14 September, 2017; originally announced September 2017.