Showing 1–39 of 39 results for author: Smrcka, L

Commensurability oscillations in a quasi-two-dimensional electron gas subjected to strong in-plane magnetic field

Authors: Ludvik Smrcka

Abstract: We report on a theoretical study of the commensurability oscillations in a quasi-two-dimensional electron gas modulated by a unidirectional periodic potential and subjected to tilted magnetic fields with a strong in-plane component. As a result of coupling of the in-plane field component and the confining potential in the finite-width quantum well, the originally circular cyclotron orbits become a… ▽ More We report on a theoretical study of the commensurability oscillations in a quasi-two-dimensional electron gas modulated by a unidirectional periodic potential and subjected to tilted magnetic fields with a strong in-plane component. As a result of coupling of the in-plane field component and the confining potential in the finite-width quantum well, the originally circular cyclotron orbits become anisotropic and tilted out of the sample plane. A quasi-classical approach to the theory, that relates the magneto-resistance oscillations to the guiding-center drift, is extended to this case. △ Less

Submitted 25 February, 2015; originally announced February 2015.

Comments: 6 pages, 4 figures

Magnetotransport in graphene on silicon side of SiC

Authors: P. Vasek, L. Smrcka, P. Svoboda, V. Jurka, M. Orlita, D. K. Maude, W. Strupinski, R. Stepniewski, R. Yakimova

Abstract: We have studied the transport properties of graphene grown on silicon side of SiC. Samples under study have been prepared by two different growth methods in two different laboratories. Magnetoresistance and Hall resistance have been measured at temperatures between 4 and 100 K in resistive magnet in magnetic fields up to 22 T. In spite of differences in sample preparation, the field dependence of… ▽ More We have studied the transport properties of graphene grown on silicon side of SiC. Samples under study have been prepared by two different growth methods in two different laboratories. Magnetoresistance and Hall resistance have been measured at temperatures between 4 and 100 K in resistive magnet in magnetic fields up to 22 T. In spite of differences in sample preparation, the field dependence of resistances measured on both sets of samples exhibits two periods of magneto-oscillations indicating two different parallel conducting channels with different concentrations of carriers. The semi-quantitative agreement with the model calculation allows for conclusion that channels are formed by high-density and low-density Dirac carriers. The coexistence of two different groups of carriers on the silicon side of SiC was not reported before. △ Less

Submitted 24 April, 2013; v1 submitted 2 October, 2012; originally announced October 2012.

Comments: 5 pages, 6 figures, accepted for publication in the "IOP Journal of Physics: Conference series" as a contribution to the proceedings of the 20th International Conference on "High Magnetic Fields in Semiconductor Physics", HMF 20

Infrared magneto-spectroscopy of graphite in tilted fields

Authors: N. A. Goncharuk, L. Nadvornik, C. Faugeras, M. Orlita, L. Smrcka

Abstract: The electronic structure of Bernal-stacked graphite subject to tilted magnetic fields has been investigated using infrared magneto-transmission experiments. With the increasing in-plane component of the magnetic field B, we observe significant broadening and partially also splitting of interband inter-Landau level transitions, which originate at the H point of the graphite Brillouin zone, where th… ▽ More The electronic structure of Bernal-stacked graphite subject to tilted magnetic fields has been investigated using infrared magneto-transmission experiments. With the increasing in-plane component of the magnetic field B, we observe significant broadening and partially also splitting of interband inter-Landau level transitions, which originate at the H point of the graphite Brillouin zone, where the charge carriers behave as massless Dirac fermions. The observed behavior is attributed to the lifting of the twofold degeneracy of Landau levels at the H point - a degeneracy which in graphite complements the standard spin and valley degeneracies typical of graphene. △ Less

Submitted 13 August, 2012; originally announced August 2012.

Comments: 6 pages, 3 figures

Journal ref: Physical Review B 86, 155409 (2012)

Tight-binding description of Landau levels of graphite in tilted magnetic fields

Authors: Nataliya A. Goncharuk, Ludvik Smrcka

Abstract: The electronic structure of Bernal-stacked graphite subject to tilted magnetic fields is studied theoretically. The minimal nearest-neighbor tight-binding model with the Peierls substitution is employed to describe the structure of Landau levels. We show that while the orbital effect of the in-plane component of the magnetic field is negligible for massive Dirac fermions in the vicinity of the K p… ▽ More The electronic structure of Bernal-stacked graphite subject to tilted magnetic fields is studied theoretically. The minimal nearest-neighbor tight-binding model with the Peierls substitution is employed to describe the structure of Landau levels. We show that while the orbital effect of the in-plane component of the magnetic field is negligible for massive Dirac fermions in the vicinity of the K point of the graphite Brillouin zone, at the H point it leads to the experimentally observable splitting of Landau levels, which grows approximately linearly with the in-plane field intensity. △ Less

Submitted 20 October, 2011; v1 submitted 4 August, 2011; originally announced August 2011.

Comments: 15 pages, 6 figures

Journal ref: J. Phys.: Condens. Matter 24 (2012) 185503

Electronic properties of graphite in tilted magnetic fields

Authors: Nataliya A. Goncharuk, Ludvik Smrcka

Abstract: The minimal nearest-neighbor tight-binding model with the Peierls substitution is employed to describe the electronic structure of Bernal-stacked graphite subject to tilted magnetic fields. We show that while the presence of the in-plane component of the magnetic field has a negligible effect on the Landau level structure at the K point of the graphite Brillouin zone, at the H point it leads to th… ▽ More The minimal nearest-neighbor tight-binding model with the Peierls substitution is employed to describe the electronic structure of Bernal-stacked graphite subject to tilted magnetic fields. We show that while the presence of the in-plane component of the magnetic field has a negligible effect on the Landau level structure at the K point of the graphite Brillouin zone, at the H point it leads to the experimentally observable splitting of Landau levels which grows approximately linearly with the in-plane field intensity. △ Less

Submitted 4 May, 2011; originally announced May 2011.

Comments: 4 pages, 1 figure

From laterally modulated two-dimensional electron gas towards artificial graphene

Authors: L. Nadvornik, M. Orlita, N. A. Goncharuk, L. Smrcka, V. Novak, V. Jurka, K. Hruska, Z. Vyborny, Z. R. Wasilewski, M. Potemski, K. Vyborny

Abstract: Cyclotron resonance has been measured in far-infrared transmission of GaAs/Al$_x$Ga$_{1-x}$As heterostructures with an etched hexagonal lateral superlattice. Non-linear dependence of the resonance position on magnetic field was observed as well as its splitting into several modes. Our explanation, based on a perturbative calculation, describes the observed phenomena as a weak effect of the lateral… ▽ More Cyclotron resonance has been measured in far-infrared transmission of GaAs/Al$_x$Ga$_{1-x}$As heterostructures with an etched hexagonal lateral superlattice. Non-linear dependence of the resonance position on magnetic field was observed as well as its splitting into several modes. Our explanation, based on a perturbative calculation, describes the observed phenomena as a weak effect of the lateral potential on the two-dimensional electron gas. Using this approach, we found a correlation between parameters of the lateral patterning and the created effective potential and obtain thus insights on how the electronic miniband structure has been tuned. The miniband dispersion was calculated using a simplified model and allowed us to formulate four basic criteria that have to be satisfied to reach graphene-like physics in such systems. △ Less

Submitted 16 December, 2011; v1 submitted 28 April, 2011; originally announced April 2011.

Journal ref: New J. Phys. 14, 053002 (2012)

Pre-edge XANES structure of Mn in (Ga,Mn)As

Authors: N. A. Goncharuk, J. Kucera, L. Smrcka

Abstract: The X-ray absorption near-edge structure (XANES) at the Mn K-edge in the (Ga,Mn)As magnetic semiconductor was simulated using the full potential linearized augmented plane wave (FLAPW) method including the core-hole effect. The calculations were performed in the supercell scheme for a substitutional and two tetrahedral interstitial Mn sites. The resulting pre-edge absorption structures show sharp… ▽ More The X-ray absorption near-edge structure (XANES) at the Mn K-edge in the (Ga,Mn)As magnetic semiconductor was simulated using the full potential linearized augmented plane wave (FLAPW) method including the core-hole effect. The calculations were performed in the supercell scheme for a substitutional and two tetrahedral interstitial Mn sites. The resulting pre-edge absorption structures show sharp distinction between the spectra simulated for the substitutional and interstitial Mn defects which is determined mainly by the second nearest neighbor ligands. A single feature is obtained for the substitutional Mn impurity, whereas two peaks appear for both types of interstitial defects. An interpretation of the pre-edge features was proposed. △ Less

Submitted 23 March, 2010; originally announced March 2010.

Comments: 5 pages, 4 figures

Journal ref: Chem. Met. Alloys 2, 34 (2009)

Gate-induced magneto-oscillation phase anomalies in graphene bilayers

Authors: N. A. Goncharuk, L. Smrcka

Abstract: The magneto-oscillations in graphene bilayers are studied in the vicinity of the K and K' points of the Brillouin zone within the four-band continuum model ased on the simplest tight-binding approximation involving only the nearest neighbor interactions. The model is employed to construct Landau plots for a variety of carrier concentrations and bias strengths between the graphene planes. The quant… ▽ More The magneto-oscillations in graphene bilayers are studied in the vicinity of the K and K' points of the Brillouin zone within the four-band continuum model ased on the simplest tight-binding approximation involving only the nearest neighbor interactions. The model is employed to construct Landau plots for a variety of carrier concentrations and bias strengths between the graphene planes. The quantum-mechanical and quasiclassical approaches are compared. We found that the quantum magneto-oscillations are only asymptotically periodic and reach the frequencies predicted quasiclassically for high indices of Landau levels. In unbiased bilayers the phase of oscillations is equal to the phase of massive fermions. Anomalous behavior of oscillation phases was found in biased bilayers with broken inversion symmetry. The oscillation frequencies again tend to quasiclassically predicted ones, which are the same for $K$ and $K'$, but the quantum approach yields the gate-tunable corrections to oscillation phases, which differ in sign for K and K'. These valley-dependent phase corrections give rise, instead of a single quasiclassical series of oscillations, to two series with the same frequency but shifted in phase. △ Less

Submitted 22 March, 2010; v1 submitted 11 January, 2010; originally announced January 2010.

Comments: 8 pages, 8 figures

Journal ref: New J. Phys. 12, 083048 (2010)

On the phase of magneto-oscillations in graphite

Authors: L. Smrcka, N. A. Goncharuk

Abstract: The problem of Dirac fermions in graphite subject to a perpendicular magnetic field is studied. We show analytically that the weak inter-layer interaction between the graphene sheets leads to anomalies in the Shubnikov-de Haas and de Haas-van Alphen magneto-oscillations governed by the orbits around extremal cross-sections of the graphite Fermi surface. The calculation of the Landau plot perform… ▽ More The problem of Dirac fermions in graphite subject to a perpendicular magnetic field is studied. We show analytically that the weak inter-layer interaction between the graphene sheets leads to anomalies in the Shubnikov-de Haas and de Haas-van Alphen magneto-oscillations governed by the orbits around extremal cross-sections of the graphite Fermi surface. The calculation of the Landau plot performed within a four band continuum model reveals that magneto-oscillations are aperiodic, except of the case of vanishing inter-layer interaction at the H point of the graphite Brillouin zone. Also for all other orbits along the H-K-H edge the magneto-oscillations are only asymptotically periodic in the quasi-classical limit, with the phase corresponding to massive fermions. △ Less

Submitted 27 April, 2009; originally announced April 2009.

Comments: 4 pages, 3 figures

Journal ref: PHYSICAL REVIEW B 80, 073403 (2009)

K-edge XANES of substitutional and interstitial Mn atoms in (Ga,Mn)As

Authors: N. A. Goncharuk, L. Smrcka, J. Kucera, K. Olejnik, V. Novak, Z. Matej, L. Nichtova, V. Holy

Abstract: This work reports theoretical and experimental study of the X-ray absorption near-edge structure (XANES) at the Mn K-edge in (Ga,Mn)As diluted magnetic semiconductors. The spectra have been calculated from the first-principles using FLAPW including the core-hole effect, a special attention has been paid to consequences of coexistence of Mn impurities in substitutional and tetrahedral interstitial… ▽ More This work reports theoretical and experimental study of the X-ray absorption near-edge structure (XANES) at the Mn K-edge in (Ga,Mn)As diluted magnetic semiconductors. The spectra have been calculated from the first-principles using FLAPW including the core-hole effect, a special attention has been paid to consequences of coexistence of Mn impurities in substitutional and tetrahedral interstitial positions. We have performed quantitative component analysis of experimental spectra collected on the (Ga,Mn)As samples before/after annealing and etching, with the aim to determine the proportion of Mn impurity configurations. Comparison of the experimental data with theoretical computations indicates that even after annealing and etching some Mn atoms still reside in interstitial sites, although the concentration of interstitial defects has been reduced by annealing. △ Less

Submitted 23 March, 2010; v1 submitted 7 May, 2008; originally announced May 2008.

Comments: 8 pages, 10 figures

Electron magnetotransport in GaAs/AlGaAs superlattices with weak and strong inter-well coupling

Authors: L. Smrcka, N. A. Goncharuk, P. Svoboda, P. Vasek, Yu. Krupko, W. Wegscheider

Abstract: We report on magnetotransport measurements in two MBE-grown GaAs/AlGaAs superlattices formed by wide and narrow quantum wells and thin Si-doped barriers subject to tilted magnetic fields. It has been shown that illumination of the strongly coupled superlattice with narrow wells leads to reduction of its dimensionality from the 3D to 2D. The illumination-induced transition is revealed by remarkab… ▽ More We report on magnetotransport measurements in two MBE-grown GaAs/AlGaAs superlattices formed by wide and narrow quantum wells and thin Si-doped barriers subject to tilted magnetic fields. It has been shown that illumination of the strongly coupled superlattice with narrow wells leads to reduction of its dimensionality from the 3D to 2D. The illumination-induced transition is revealed by remarkable change of magnetoresistance curves as compared to those measured before illumination. The experimental data along with tight-binding model calculations indicate that the illumination not only enhances the electron concentration but also suppresses the electron tunneling through the barriers. △ Less

Submitted 25 July, 2007; originally announced July 2007.

Comments: 3 pages, 3 figures, elsart/PHYEAUTH macros; presented on the LDSD 2007 Conference in the Caribbean Archipelago San Andres, Colombia. To be published as a special issue of Microelectronics Journal (Elsevier)

Journal ref: Microelectronics Journal 39, 411 (2008)

Electronic structure of unidirectional superlattices in crossed electric and magnetic fields and related terahertz oscillations

Authors: L. Smrcka, N. A. Goncharuk, M. Orlita, R. Grill

Abstract: We have studied Bloch electrons in a perfect unidirectional superlattice subject to crossed electric and magnetic fields, where the magnetic field is oriented ``in-plane'', i.e. in parallel to the sample plane. Two orientation of the electric field are considered. It is shown that the magnetic field suppresses the intersubband tunneling of the Zener type, but does not change the frequency of Blo… ▽ More We have studied Bloch electrons in a perfect unidirectional superlattice subject to crossed electric and magnetic fields, where the magnetic field is oriented ``in-plane'', i.e. in parallel to the sample plane. Two orientation of the electric field are considered. It is shown that the magnetic field suppresses the intersubband tunneling of the Zener type, but does not change the frequency of Bloch oscillations, if the electric field is oriented perpendicularly to both the sample plane and the magnetic field. The electric field applied in-plane (but perpendicularly to the magnetic field) yields the step-like electron energy spectrum, corresponding to the magnetic-field-tunable oscillations alternative to the Bloch ones. △ Less

Submitted 25 July, 2007; originally announced July 2007.

Comments: 7 pages, 1 figure, accepted for publication in Phys. Rev. B

Journal ref: Phys. Rev. B 76, 075321 (2007)

Illumination-induced changes of the Fermi surface topology in three-dimensional superlattices

Authors: N. A. Goncharuk, L. Smrcka, P. Svoboda, P. Vasek, J. Kucera, Yu. Krupko, W. Wegscheider

Abstract: The magnetoresistance of the MBE-grown GaAs/AlGaAs superlattice with Si-doped barriers has been measured in tilted magnetic fields in the as-grown state, and after brief illumination by a red-light diode at low temperature, T is approximately 0.3 K. A remarkable illumination-induced modification of magnetoresistance curves has been observed, which indicates a significant change of the superlatti… ▽ More The magnetoresistance of the MBE-grown GaAs/AlGaAs superlattice with Si-doped barriers has been measured in tilted magnetic fields in the as-grown state, and after brief illumination by a red-light diode at low temperature, T is approximately 0.3 K. A remarkable illumination-induced modification of magnetoresistance curves has been observed, which indicates a significant change of the superlattice Fermi surface topology. Analysis of magnetoresistance data in terms of the tight-binding model reveals that not only electron concentration and mobility have been increased by illumination, but also the coupling among 2D electron layers in neighboring quantum wells has been reduced. △ Less

Submitted 31 May, 2007; originally announced May 2007.

Comments: 7 pages, 6 figures, accepted for publication in Phys. Rev. B

Journal ref: Phys. Rev. B 75 (2007) 245322 (1-7)

Substrate temperature changes during MBE growth of GaMnAs

Authors: V. Novak, K. Olejnik, M. Cukr, L. Smrcka, Z. Remes, J. Oswald

Abstract: Remarkably big increase of the substrate temperature during the low-temperature MBE growth of GaMnAs layers is observed by means of band gap spectroscopy. It is explained and simulated in terms of changes in the absorption/emission characteristics of the growing layer. Options for the temperature variation dam** are discussed. Remarkably big increase of the substrate temperature during the low-temperature MBE growth of GaMnAs layers is observed by means of band gap spectroscopy. It is explained and simulated in terms of changes in the absorption/emission characteristics of the growing layer. Options for the temperature variation dam** are discussed. △ Less

Submitted 19 April, 2007; originally announced April 2007.

Comments: 5 pages, 5 figures Submitted to Journal of Applied Physics

Journal ref: J.Appl.Phys. 102, 083536 (2007)

Tunable terahertz oscillations in superlattices subject to an in-plane magnetic field

Authors: M. Orlita, R. Grill, L. Smrcka, M. Zvara

Abstract: We present a concept of terahertz oscillations in superlattices that are generated under conditions apparently different from standard Bloch oscillations. These oscillations are induced when crossed magnetic and electric fields are applied to the superlattice, both in the in-plane direction. The frequency of these oscillations is tunable by the applied fields. We present a concept of terahertz oscillations in superlattices that are generated under conditions apparently different from standard Bloch oscillations. These oscillations are induced when crossed magnetic and electric fields are applied to the superlattice, both in the in-plane direction. The frequency of these oscillations is tunable by the applied fields. △ Less

Submitted 14 August, 2006; v1 submitted 19 January, 2006; originally announced January 2006.

Comments: Accepted by Phys. Rev. B

Journal ref: Phys. Rev. B 74, 125312 (2006)

Magnetoresistance oscillations in GaAs/AlGaAs superlattices subject to in-plane magnetic fields

Authors: L. Smrčka, P. Vašek, P. Svoboda, N. A. Goncharuk, O. Pacherová, Yu. Krupko, Y. Sheikin

Abstract: The MBE-grown GaAs/AlGaAs superlattice with Si-doped barriers has been used to study a 3D-2D transition under the influence of the in-plane component of applied magnetic field. The longitudinal magnetoresistance data measured in tilted magnetic fields have been interpreted in terms of a simple tight-binding model. The data provide values of basic parameters of the model and make it possible to r… ▽ More The MBE-grown GaAs/AlGaAs superlattice with Si-doped barriers has been used to study a 3D-2D transition under the influence of the in-plane component of applied magnetic field. The longitudinal magnetoresistance data measured in tilted magnetic fields have been interpreted in terms of a simple tight-binding model. The data provide values of basic parameters of the model and make it possible to reconstruct the superlattice Fermi surface and to calculate the density of states for the lowest Landau subbands. Positions of van Hove singularities in the DOS agree excellently with magnetoresistance oscillations, confirming that the model describes adequately the magnetoresistance of strongly coupled semiconductor superlattices. △ Less

Submitted 14 October, 2005; originally announced October 2005.

Comments: 4 pages, 3 figures, elsart/PHYEAUTH macros; presented on the EP2DS-16 Conference in Albuquerque, New Mexico USA. To be published in Physica E

Journal ref: Physica E 34 (2006) 632-635

Electronic Structure of Three-Dimensional Superlattices Subject to Tilted Magnetic Fields

Authors: N. A. Goncharuk, L. Smrcka, J. Kucera, K. Vyborny

Abstract: Full quantum-mechanical description of electrons moving in 3D structures with unidirectional periodic modulation subject to tilted magnetic fields requires an extensive numerical calculation. To understand magneto-oscillations in such systems it is in many cases sufficient to use the quasi-classical approach, in which the zero-magnetic-field Fermi surface is considered as a magnetic-field-indepe… ▽ More Full quantum-mechanical description of electrons moving in 3D structures with unidirectional periodic modulation subject to tilted magnetic fields requires an extensive numerical calculation. To understand magneto-oscillations in such systems it is in many cases sufficient to use the quasi-classical approach, in which the zero-magnetic-field Fermi surface is considered as a magnetic-field-independent rigid body in k-space and periods of oscillations are related to extremal cross-sections of the Fermi surface cut by planes perpendicular to the magnetic-field direction. We point out cases where the quasi-classical treatment fails and propose a simple tight-binding fully-quantum-mechanical model of the superlattice electronic structure. △ Less

Submitted 25 February, 2005; originally announced February 2005.

Comments: 8 pages, 7 figures, RevTex, submitted to Phys. Rev. B

Journal ref: Phys. Rev. B 71, 195318 (2005)

Magnetoresistance of Si(001) MOSFETs with high concentration of electrons

Authors: L. Smrcka, O. N. Makarovsky, S. G. Schemenchinskii, P. Vasek, V. Jurka

Abstract: We present an experimental study of electron transport in inversion layers of high-mobility Si(001) samples with occupied excited subbands. The second series of oscillations, observed in addition to the main series of Shubnikov-de Hass oscillations, is tentatively attributed to the occupation of a subband associated with the $E_{0'}$ level. Besides, a strong negative magnetoresistance and nonlin… ▽ More We present an experimental study of electron transport in inversion layers of high-mobility Si(001) samples with occupied excited subbands. The second series of oscillations, observed in addition to the main series of Shubnikov-de Hass oscillations, is tentatively attributed to the occupation of a subband associated with the $E_{0'}$ level. Besides, a strong negative magnetoresistance and nonlinear field dependence of the Hall resistance accompany the novel oscillations at high carrier concentrations. The heating of the 2D electron layers leads to suppression of the observed anomalies. △ Less

Submitted 12 June, 2003; originally announced June 2003.

Comments: 4 pages, 6 figures, elsart/PHYEAUTH macros; to be presented on the EP2DS-15 Conference in Nara, Japan

In-plane Magnetic Field Dependent Magnetoresistance of Gated Asymmetric Double Quantum Wells

Authors: Yu. Krupko, L. Smrcka, P. Vasek, P. Svoboda, M. Cukr, L. Jansen

Abstract: We have investigated experimentally the magnetoresistance of strongly asymmetric double-wells. The structures were prepared by inserting a thin Al$_{0.3}$Ga$_{0.7}$As barrier into the GaAs buffer layer of a standard modulation-doped GaAs/Al$_{0.3}$Ga$_{0.7}$As heterostructure. The resulting double-well system consists of a nearly rectangular well and of a triangular well coupled by tunneling thr… ▽ More We have investigated experimentally the magnetoresistance of strongly asymmetric double-wells. The structures were prepared by inserting a thin Al$_{0.3}$Ga$_{0.7}$As barrier into the GaAs buffer layer of a standard modulation-doped GaAs/Al$_{0.3}$Ga$_{0.7}$As heterostructure. The resulting double-well system consists of a nearly rectangular well and of a triangular well coupled by tunneling through the thin barrier. With a proper choice of the barrier parameters one can control the occupancy of the two wells and of the two lowest (bonding and antibonding) subbands. The electron properties can be further influenced by applying front- or back-gate voltage. △ Less

Submitted 22 September, 2003; v1 submitted 12 June, 2003; originally announced June 2003.

Comments: 4 pages, 5 figures, elsart/PHYEAUTH macros; to be presented on the EP2DS-15 Conference in Nara, Japan. Revised version. To appear in Physica E

Cyclotron Resonance Study of the Two-Dimensional Electron Layers and Double-Layers in Tilted Magnetic Fields

Authors: Nataliya A. Goncharuk, Ludvik Smrcka, Jan Kucera

Abstract: The far-infrared absorption in two-dimensional electron layers subject to magnetic field of general orientation was studied theoretically. The Kubo formula is employed to derive diagonal components of the magneto-conductivity tensor of two-dimensional electron single-layers and double-layers. The parabolic quantum well is used to model a simple single-layer system. Both single-layer and double-l… ▽ More The far-infrared absorption in two-dimensional electron layers subject to magnetic field of general orientation was studied theoretically. The Kubo formula is employed to derive diagonal components of the magneto-conductivity tensor of two-dimensional electron single-layers and double-layers. The parabolic quantum well is used to model a simple single-layer system. Both single-layer and double-layer systems can be realized in a pair of tunnel-coupled, strictly two-dimensional quantum wells. Obtained results are compared to experimental data. △ Less

Submitted 22 September, 2003; v1 submitted 12 June, 2003; originally announced June 2003.

Comments: 4 pages, 6 figures, elsart/PHYEAUTH macros; presented on the EP2DS-15 Conference in Nara, Japan. To be published in Physica E

Tight-binding model for strongly modulated two-dimensional superlattices

Authors: Karel Vyborny, Ludvik Smrcka

Abstract: Common models describing magnetotransport properties of periodically modulated two--dimensional systems often either directly start from a semiclassical approach or give results well conceivable within the semiclassical framework. Recently, magnetoresistance oscillations have been found on samples with strong unilateral modulation and short period (d=15 nm) which cannot be explained on a semicla… ▽ More Common models describing magnetotransport properties of periodically modulated two--dimensional systems often either directly start from a semiclassical approach or give results well conceivable within the semiclassical framework. Recently, magnetoresistance oscillations have been found on samples with strong unilateral modulation and short period (d=15 nm) which cannot be explained on a semiclassical level (magnetic breakdown). We use a simple fully quantum mechanical model which gives us both magnetoresistance data nicely comparing to the experiments and a good intuitive insight into the effects taking place in the system. △ Less

Submitted 12 August, 2002; originally announced August 2002.

Comments: 7 pages, 5 figures, LaTeX, iopart, in proceedings of the 26th ICPS

Cyclotron Resonance in Two-Dimensional Electron Single-Layers and Double-Layers in Tilted Magnetic Fields

Authors: N. Goncharuk, L. Smrcka, J. Kucera

Abstract: The far-infrared absorption in two-dimensional electron layers subject to magnetic field of general orientation was studied theoretically. The Kubo formula was employed to derive diagonal components of the magneto-conductivity tensor of two-dimensional electron single-layers and double-layers. A parabolic quantum well was used to model single-layer systems. Bilayer systems were represented by a… ▽ More The far-infrared absorption in two-dimensional electron layers subject to magnetic field of general orientation was studied theoretically. The Kubo formula was employed to derive diagonal components of the magneto-conductivity tensor of two-dimensional electron single-layers and double-layers. A parabolic quantum well was used to model single-layer systems. Bilayer systems were represented by a pair of tunnel-coupled, strictly two-dimensional quantum wells. Obtained results were compared to experimental data. △ Less

Submitted 23 July, 2002; v1 submitted 22 July, 2002; originally announced July 2002.

Comments: 8 pages, 11 figures, Latex, iopart, Semi-Mag 15

Magnetoresistance calculations for a two-dimensional electron gas with unilateral short-period strong modulation

Authors: Karel Vyborny, Ludvik Smrcka, Rainer A. Deutschmann

Abstract: The linear response theory is used to describe magnetoresistance oscillations of short-period unilateral superlattices with strong modulation (or alternatively arrays of coupled quantum wires). The semiclassical description of this system fails for strong magnetic fields (magnetic breakdown) and we employ a simple fully-quantum-mechanical tight-binding model in conjunction with Kubo's formula in… ▽ More The linear response theory is used to describe magnetoresistance oscillations of short-period unilateral superlattices with strong modulation (or alternatively arrays of coupled quantum wires). The semiclassical description of this system fails for strong magnetic fields (magnetic breakdown) and we employ a simple fully-quantum-mechanical tight-binding model in conjunction with Kubo's formula instead. The resulting magnetoresistance data nicely compare to the experiments while the model opens good intuitive insight into the effects taking place in the system. △ Less

Submitted 12 June, 2002; originally announced June 2002.

Comments: 8 pages, 8 figures, submitted to PRB

Journal ref: Phys. Rev. B 66, 205318 (2002)

Novel critical field in magneto-resistance oscillation of 2DEG in asymmetric GaAs/AlGaAs double wells measured as a function of the in-plane magnetic field

Authors: P. Svoboda, Y. Krupko, L. Smrcka, M. Cukr, T. Jungwirth, L. Jansen

Abstract: We have investigated the magnetoresistance of strongly asymmetric double-well structures formed by a thin AlGaAs barrier grown far from the interface in the GaAs buffer of standard heterostructures. In magnetic fields oriented parallel to the electron layers, the magnetoresistance exhibits an oscillation associated with the depopulation of the higher occupied subband and with the field-induced t… ▽ More We have investigated the magnetoresistance of strongly asymmetric double-well structures formed by a thin AlGaAs barrier grown far from the interface in the GaAs buffer of standard heterostructures. In magnetic fields oriented parallel to the electron layers, the magnetoresistance exhibits an oscillation associated with the depopulation of the higher occupied subband and with the field-induced transition into a decoupled bilayer. In addition, the increasing field transfers electrons from the triangular to rectangular well and, at high enough field value, the triangular well is emptied. Consequently, the electronic system becomes a single layer which leads to a sharp step in the density of electron states and to an additional minimum in the magnetoresistance curve. △ Less

Submitted 21 June, 2001; originally announced June 2001.

Comments: 3 pages, 3 figures

Longitudinal conductivity and transverse charge redistribution in coupled quantum wells subject to in-plane magnetic fields

Authors: J. Kolorenc, L. Smrcka, P. Streda

Abstract: In double quantum wells electrons experience a Lorentz force oriented perpendicular to the structure plane when an electric current is driven perpendicular to the direction of an in-plane magnetic field. Consequently, the excess charge is accumulated in one of the wells. The polarization of a bilayer electron system and the corresponding Hall voltage are shown to contribute substantially to the… ▽ More In double quantum wells electrons experience a Lorentz force oriented perpendicular to the structure plane when an electric current is driven perpendicular to the direction of an in-plane magnetic field. Consequently, the excess charge is accumulated in one of the wells. The polarization of a bilayer electron system and the corresponding Hall voltage are shown to contribute substantially to the in-plane conductivity. △ Less

Submitted 21 June, 2001; originally announced June 2001.

Comments: 3 pages, 2 figures

Quantum Hall Stripe States in a Tilted Magnetic Field

Authors: T. Jungwirth, A. H. MacDonald, L. Smrčka, S. M. Girvin

Abstract: A strong anisotropy in the longitudinal resistivity of a 2D electron system has been observed at half-filled high Landau levels. We report on detailed Hartree-Fock calculations of the unidirectional charge density wave (UCDW) orientation energy induced by a tilted magnetic field. We find that stripes can orient both parallel or perpendicular to the in-plane field depending on the sample paramete… ▽ More A strong anisotropy in the longitudinal resistivity of a 2D electron system has been observed at half-filled high Landau levels. We report on detailed Hartree-Fock calculations of the unidirectional charge density wave (UCDW) orientation energy induced by a tilted magnetic field. We find that stripes can orient both parallel or perpendicular to the in-plane field depending on the sample parameters and field strength. The close agreement between complex experimental data on different sample geometries and our theoretical results strongly support the UCDW picture as the origin of the observed anisotropies in high Landau levels. △ Less

Submitted 16 March, 2001; originally announced March 2001.

Comments: 2 pages, 2 figures, 25th International Conference on the Physics of Semiconductors, Osaka, Japan, 2000

Journal ref: Proceedings of ICPS25, Springer Verlag p.933 (2001)

Inter-layer Hall effect in double quantum wells subject to in-plane magnetic fields

Authors: J. Kolorenc, L. Smrcka, P. Streda

Abstract: We report on a theoretical study of the transport properties of two coupled two-dimensional electron systems subject to in-plane magnetic fields. The charge redistribution in double wells induced by the Lorenz force in crossed electric and magnetic fields has been studied. We have found that the redistribution of the charge and the related inter-layer Hall effect originate in the chirality of di… ▽ More We report on a theoretical study of the transport properties of two coupled two-dimensional electron systems subject to in-plane magnetic fields. The charge redistribution in double wells induced by the Lorenz force in crossed electric and magnetic fields has been studied. We have found that the redistribution of the charge and the related inter-layer Hall effect originate in the chirality of diamagnetic currents and give a substantial contribution to the conductivity. △ Less

Submitted 4 November, 2001; v1 submitted 13 March, 2001; originally announced March 2001.

Comments: 7 RevTex pages, 4 figures, appendix added and misprint in Eq. (11) corrected

Journal ref: Phys. Rev. B 66, 085301 (2002)

Magnetoresistance and electronic structure of asymmetric GaAs/AlGaAs double quantum wells in the in-plane/tilted magnetic field

Authors: O. N. Makarovskii, L. Smrcka, P. Vasek, T. Jungwirth, M. Cukr, L. Jansen

Abstract: Bilayer two-dimensional electron systems formed by a thin barrier in the GaAs buffer of a standard heterostructure were investigated by magnetotransport measurements. In magnetic fields oriented parallel to the electron layers, the magnetoresistance exhibits an oscillation associated with the depopulation of the higher occupied subband and the field-induced transition into a decoupled bilayer. S… ▽ More Bilayer two-dimensional electron systems formed by a thin barrier in the GaAs buffer of a standard heterostructure were investigated by magnetotransport measurements. In magnetic fields oriented parallel to the electron layers, the magnetoresistance exhibits an oscillation associated with the depopulation of the higher occupied subband and the field-induced transition into a decoupled bilayer. Shubnikov-de Haas oscillations in slightly tilted magnetic fields allow to reconstruct the evolution of the electron concentration in the individual subbands as a function of the in-plane magnetic field. The characteristics of the system derived experimentally are in quantitative agreement with numerical self-consistent-field calculations of the electronic structure. △ Less

Submitted 18 April, 2000; originally announced April 2000.

Comments: 6 pages, 5 figures

Reorientation of Anisotropy in a Square Well Quantum Hall Sample

Authors: W. Pan, T. Jungwirth, H. L. Stormer, D. C. Tsui, A. H. MacDonald, S. M. Girvin, L. Smrcka, L. N. Pfeiffer, K. W. Baldwin, K. W. West

Abstract: We have measured magnetotransport at half-filled high Landau levels in a quantum well with two occupied electric subbands. We find resistivities that are {\em isotropic} in perpendicular magnetic field but become strongly {\em anisotropic} at $ν$ = 9/2 and 11/2 on tilting the field. The anisotropy appears at an in-plane field, $B_{ip} \sim$ 2.5T, with the easy-current direction {\em parallel} to… ▽ More We have measured magnetotransport at half-filled high Landau levels in a quantum well with two occupied electric subbands. We find resistivities that are {\em isotropic} in perpendicular magnetic field but become strongly {\em anisotropic} at $ν$ = 9/2 and 11/2 on tilting the field. The anisotropy appears at an in-plane field, $B_{ip} \sim$ 2.5T, with the easy-current direction {\em parallel} to $B_{ip}$ but rotates by 90$^{\circ}$ at $B_{ip} \sim$ 10T and points now in the same direction as in single-subband samples. This complex behavior is in quantitative agreement with theoretical calculations based on a unidirectional charge density wave state model. △ Less

Submitted 29 March, 2000; originally announced March 2000.

Comments: 4 pages, 4 figures

Excitonic photoluminescence in symmetric coupled double quantum wells subject to an external electric field

Authors: J. Soubusta, R. Grill, P. Hlidek, M. Zvara, L. Smrcka, S. Malzer, W. Geisselbrecht, G. H. Dohler

Abstract: The effect of an external electric field F on the excitonic photoluminescence (PL) spectra of a symmetric coupled double quantum well (DQW) is investigated both theoretically and experimentally. We show that the variational method in a two-particle electron-hole wave function approximation gives a good agreement with measurements of PL on a narrow DQW in a wide interval of F including flat-band… ▽ More The effect of an external electric field F on the excitonic photoluminescence (PL) spectra of a symmetric coupled double quantum well (DQW) is investigated both theoretically and experimentally. We show that the variational method in a two-particle electron-hole wave function approximation gives a good agreement with measurements of PL on a narrow DQW in a wide interval of F including flat-band regime. The experimental data are presented for an MBE-grown DQW consisting of two 5 nm wide GaAs wells, separated by a 4 monolayers (MLs) wide pure AlAs central barrier, and sandwiched between Ga_{0.7}Al_{0.3}As layers. The bias voltage is applied along the growth direction. Spatially direct and indirect excitonic transitions are identified, and the radius of the exciton and squeezing of the exciton in the growth direction are evaluated variationally. The excitonic binding energies, recombination energies, oscillator strengths, and relative intensities of the transitions as functions of the applied field are calculated. Our analysis demonstrates that this simple model is applicable in case of narrow DQWs not just for a qualitative description of the PL peak positions but also for the estimation of their individual shapes and intensities. △ Less

Submitted 14 June, 1999; originally announced June 1999.

Comments: 5 pages, 4 figures (accepted in Phys. Rev. B)

Journal ref: Phys. Rev. B 60, 7740 (1999)

Field-tilt Anisotropy Energy in Quantum Hall Stripe States

Authors: T. Jungwirth, A. H. MacDonald, L. Smrcka, S. M. Girvin

Abstract: Recently reported giant anisotropy in the longitudinal resistivity of a 2D electron system with valence Landau level index $N \ge 2$ has been interpreted as a signal of unidirectional charge density wave (UCDW) ground states. We report on detailed Hartree-Fock calculations of the UCDW orientation energy induced by a tilted magnetic field. We find that for current experimental samples stripes are… ▽ More Recently reported giant anisotropy in the longitudinal resistivity of a 2D electron system with valence Landau level index $N \ge 2$ has been interpreted as a signal of unidirectional charge density wave (UCDW) ground states. We report on detailed Hartree-Fock calculations of the UCDW orientation energy induced by a tilted magnetic field. We find that for current experimental samples stripes are oriented perpendicular to the in-plane field, consistent with experiment. For wider 2D electron systems we predict tilt-induced stripe states with variable anisotropy energy sign. △ Less

Submitted 8 February, 2000; v1 submitted 25 May, 1999; originally announced May 1999.

Comments: 4 pages, 2 tables, 2 figures, minor changes

Journal ref: Phys. Rev. B 60, 15574 (1999)

Magnetic Anisotropy in Quantum Hall Ferromagnets

Authors: T. Jungwirth, S. P. Shukla, L. Smrcka, M. Shayegan, A. H. MacDonald

Abstract: We show that the sign of magnetic anisotropy energy in quantum Hall ferromagnets is determined by a competition between electrostatic and exchange energies. Easy-axis ferromagnets tend to occur when Landau levels whose states have similar spatial profiles cross. We report measurements of integer QHE evolution with magnetic-field tilt. Reentrant behavior observed for the $ν= 4$ QHE at high tilt a… ▽ More We show that the sign of magnetic anisotropy energy in quantum Hall ferromagnets is determined by a competition between electrostatic and exchange energies. Easy-axis ferromagnets tend to occur when Landau levels whose states have similar spatial profiles cross. We report measurements of integer QHE evolution with magnetic-field tilt. Reentrant behavior observed for the $ν= 4$ QHE at high tilt angles is attributed to easy-axis anisotropy. This interpretation is supported by a detailed calculation of the magnetic anisotropy energy. △ Less

Submitted 19 May, 1998; originally announced May 1998.

Comments: 12 pages, 3 figures, submitted to Phys. Rev. Lett

Magnetotransport with two occupied subbands in a Si(100) inversion layer

Authors: S. G. Semenchinsky, L. Smrcka, J. Stehno

Abstract: We have studied an electron transport in inversion layers of high-mobility Si(100) samples. At high electron concentrations and temperatures below 4.2 K, two series of Shubnikov-de Haas oscillations have been observed. The temperature dam** of the second series oscillations indicates that the second occupied subband belongs to the first energy level of the fourfold-degenerate ladder $0'$. Samp… ▽ More We have studied an electron transport in inversion layers of high-mobility Si(100) samples. At high electron concentrations and temperatures below 4.2 K, two series of Shubnikov-de Haas oscillations have been observed. The temperature dam** of the second series oscillations indicates that the second occupied subband belongs to the first energy level of the fourfold-degenerate ladder $0'$. Samples with two occupied subbans exhibit a strong anomalous negative magnetoresitance, reaching $\rm \approx 25 \%$ of a zero field value at $B =$ 12 T. The resistance decrease is more pronounced for lower temperatures and higher electron concentrations. We explain this behaviour by an increase of the second subband mobility due to the freezing-out of the scattering of $0'$ electrons. Based on the measured periods of SdH oscillations, we conclude that the electrons are distributed inhomogeneously beneath the sample gate. △ Less

Submitted 31 July, 1995; originally announced July 1995.

Comments: 4 pages. RevTex text and 4 PostScript figures in a single tar-compressed file produced by 'uufiles'

Report number: SSS-95-1

Cyclotron effective mass of 2D electron layer at GaAs/AlGaAs heterojunction subject to in-plane magnetic fields

Authors: L. Smrcka, P. Vasek, J. Kolacek, T. Jungwirth, M. Cukr

Abstract: We have found that Fermi contours of a two-dimensional electron gas at $\rmGaAs/Al_xGa_{1-x}As$ interface deviate from a standard circular shape under the combined influence of an approximately triangular confining potential and the strong in-plane magnetic field. The distortion of a Fermi contour manifests itself through an increase of the electron effective cyclotron mass which has been measur… ▽ More We have found that Fermi contours of a two-dimensional electron gas at $\rmGaAs/Al_xGa_{1-x}As$ interface deviate from a standard circular shape under the combined influence of an approximately triangular confining potential and the strong in-plane magnetic field. The distortion of a Fermi contour manifests itself through an increase of the electron effective cyclotron mass which has been measured by the cyclotron resonance in the far-infrared transmission spectra and by the thermal dam** of Shubnikov-de Haas oscillations in tilted magnetic fields with an in-plane component up to 5 T. The observed increase of the cyclotron effective mass reaches almost 5 \% of its zero field value which is in good agreement with results of a self-consistent calculation. △ Less

Submitted 2 June, 1995; v1 submitted 11 April, 1995; originally announced April 1995.

Comments: 4 pages, Revtex, figures can be obtained on request from [email protected]; to appear in Phys. Rev. B (in press). No changes, the corrupted submission replaced

Single layer/bilayer transition of electron systems in AlGaAs/GaAs/AlGaAs quantum wells subject to in-plane magnetic fields

Authors: L. Smrcka, T. Jungwirth

Abstract: Equilibrium properties of electrons in double-heterojunction AlGaAs/GaAs\AlGaAs structures are investigated theoretically, using a full self-consistent numerical method. The transition from single to bilayer electron systems is discussed for the case of double-junction structures with varying distance between interfaces. In strong in-plane magnetic fields we observed the same type of transition ac… ▽ More Equilibrium properties of electrons in double-heterojunction AlGaAs/GaAs\AlGaAs structures are investigated theoretically, using a full self-consistent numerical method. The transition from single to bilayer electron systems is discussed for the case of double-junction structures with varying distance between interfaces. In strong in-plane magnetic fields we observed the same type of transition accompanied by large effects on the energy spectra. A new fenomenon in bilayer systems - separability of the energy dispersion curve in parts corresponding to electrons either in first or second layer is analyzed in detail. The magnetic field induced variation in the effective distance between electron layers is compared to the constant layers separation in standard double-well structures. Due to relatively small and soft electrostatic barrier between interfaces we expect the van Hove singularity in the 2D density of states to be easier detectable than in double-well systems. The cyclotron mass, proportional to the density of states and characterizing the electron motion in tilted magnetic fields, is calculated as a function of in-plane magnetic field. The separability of the energy spectra resulting in tilted cyclotron orbits is demonstrated on a classical picture of an electron moving in crossed electric and magnetic fields. △ Less

Submitted 1 March, 1995; originally announced March 1995.

Comments: 16 pages, Revtex. 7 PostScript figures in an uuencoded compressed file available upon request ([email protected]). J.Phys.Condens.Matter (to be published)

Report number: JS-95-02

Capacitance of Gated GaAs/AlGaAs Heterostructures Subject to In-plane Magnetic Fields

Authors: T. Jungwirth, L. Smrcka

Abstract: A detailed analysis of the capacitance of gated GaAs/AlGaAs heterostructures is presented. The nonlinear dependence of the capacitance on the gate voltage and in-plane magnetic field is discussed together with the capacitance quantum steps connected with a population of higher 2D gas subbands. The results of full self-consistent numerical calculations are compared to recent experimental data. A detailed analysis of the capacitance of gated GaAs/AlGaAs heterostructures is presented. The nonlinear dependence of the capacitance on the gate voltage and in-plane magnetic field is discussed together with the capacitance quantum steps connected with a population of higher 2D gas subbands. The results of full self-consistent numerical calculations are compared to recent experimental data. △ Less

Submitted 11 January, 1995; originally announced January 1995.

Comments: 4 pages, Revtex. 4 PostScript figures in an uuencoded compressed file available upon request. Phys. Rev.B, in press

Report number: JS-95-01

In-Plane Magnetic Field Induced Anisotropy of 2D Fermi Contours and the Field Dependent Cyclotron Mass

Authors: L. Smrcka, T. Jungwirth

Abstract: The electronic structure of a 2D gas subjected to a tilted magnetic field, with a strong component parallel to the GaAs/AlGaAs interface and a weak component oriented perpendicularly, is studied theoretically. It is shown that the parallel field component modifies the originally circular shape of a Fermi contour while the perpendicular component drive an electron by the Lorentz force along a Fer… ▽ More The electronic structure of a 2D gas subjected to a tilted magnetic field, with a strong component parallel to the GaAs/AlGaAs interface and a weak component oriented perpendicularly, is studied theoretically. It is shown that the parallel field component modifies the originally circular shape of a Fermi contour while the perpendicular component drive an electron by the Lorentz force along a Fermi line with a cyclotron frequency given by its shape. The corresponding cyclotron effective mass is calculated self-consistently for several concentrations of 2D carriers as a function of the in-plane magnetic field. The possibility to detect its field-induced deviations from the zero field value experimentally is discussed. △ Less

Submitted 25 August, 1993; originally announced August 1993.

Comments: written in LaTeX, 9 pages, 4 figures (6 pages) in 1 PS file (compressed and uuencoded) available on request from [email protected], SM-JU-93-3

Capacitance of a Double-Heterojunction GaAs/AlGaAs Structure Subjected to In-Plane Magnetic Fields: Results of Self-Consistent Calculations

Authors: T. Jungwirth, L. Smrcka

Abstract: The capacitance of a double-heterojunction structure with a wide GaAs undoped layer embedded between two selectively doped AlGaAs barriers is calculated self-consistently as a function of intensity of the in-plane magnetic field. With increasing field intensity the capacitance initially increases and after reaching a maximum decreases toward a high field limit which is less than its zero field v… ▽ More The capacitance of a double-heterojunction structure with a wide GaAs undoped layer embedded between two selectively doped AlGaAs barriers is calculated self-consistently as a function of intensity of the in-plane magnetic field. With increasing field intensity the capacitance initially increases and after reaching a maximum decreases toward a high field limit which is less than its zero field value. This behaviour is attributed to 'breathing', or charge redistribution, of the 2D electron gas at individual heterojunctions due to a combination of the confining potential and the magnetic field. △ Less

Submitted 12 August, 1993; originally announced August 1993.

Comments: LaTeX, 9 pages, 7 figs. available on request from [email protected] in 1 PS file (compressed and uuencoded)

Self-Consistent Electron Subbands of Gaas/Algaas Heterostructure in Magnetic Fields Parallel to the Interface

Authors: T. Jungwirth, L. Smrcka

Abstract: The effect of strong magnetic fields parallel to GaAs/AlGaAs interface on the subband structure of a 2D electron layer is ivestigated theoretically. The system with two levels occupied in zero magnetic field is considered and the magnetic field induced depletion of the second subband is studied. The confining potential and the electron dispersion relations are calculated self-consistently, the e… ▽ More The effect of strong magnetic fields parallel to GaAs/AlGaAs interface on the subband structure of a 2D electron layer is ivestigated theoretically. The system with two levels occupied in zero magnetic field is considered and the magnetic field induced depletion of the second subband is studied. The confining potential and the electron dispersion relations are calculated self-consistently, the electron- electron interaction is taken into account in the Hartree approximation. △ Less

Submitted 21 April, 1993; originally announced April 1993.

Comments: written in LaTeX, 8 pages, 4 figs. available on request from [email protected]