Showing 1–16 of 16 results for author: Smilauer, P

Step bunching during Si(001) homoepitaxy caused by the surface diffusion anisotropy

Authors: J. Myslivecek, C. Schelling, F. Schaffler, G. Springholz, P. Smilauer, J. Krug, B. Voigtlander

Abstract: Scanning tunneling microscopy experiments show that the unstable growth morphology observed during molecular beam homoepitaxy on slightly vicinal Si(001) surfaces consists of straight step bunches. The instability occurs under step- flow growth conditions and vanishes both during low-temperature island growth and at high temperatures. An instability with the same characteristics is observed in a… ▽ More Scanning tunneling microscopy experiments show that the unstable growth morphology observed during molecular beam homoepitaxy on slightly vicinal Si(001) surfaces consists of straight step bunches. The instability occurs under step- flow growth conditions and vanishes both during low-temperature island growth and at high temperatures. An instability with the same characteristics is observed in a 2D Kinetic Monte Carlo model of growth with incorporated Si(001)- like diffusion anisotropy. This provides strong evidence that the diffusion anisotropy destabilizes growth on Si(001) and similar surfaces towards step bunching. This new instability mechanism is operational without any additional step edge barriers. △ Less

Submitted 13 December, 2002; originally announced December 2002.

Comments: 6 pages, 4 figures

Effects of adsorbates on submonolayer growth

Authors: Miroslav Kotrla, Joachim Krug, Pavel Smilauer

Abstract: The effects of adsorbates on nucleation and growth of two-dimensional islands is investigated by kinetic Monte Carlo simulations and rate equation theory. The variation of island morphology with adsorbate parameters is discussed and the temperature-dependence of island density in the case of immobile adsorbates is studied in detail. A set of rate equations for the description of nucleation in th… ▽ More The effects of adsorbates on nucleation and growth of two-dimensional islands is investigated by kinetic Monte Carlo simulations and rate equation theory. The variation of island morphology with adsorbate parameters is discussed and the temperature-dependence of island density in the case of immobile adsorbates is studied in detail. A set of rate equations for the description of nucleation in the presence of predeposited mobile and immobile adsorbates is developed. △ Less

Submitted 8 November, 2001; originally announced November 2001.

Comments: NATO ARW Colective surface diffusion coefficients under non-equilibrium conditions, October 2-6, 2000, Prague

Submonolayer epitaxy with impurities

Authors: Miroslav Kotrla, Joachim Krug, Pavel Smilauer

Abstract: The effect of impurities on epitaxial growth in the submonolayer regime is studied using kinetic Monte Carlo simulations of a two-species solid-on-solid growth model. Both species are mobile, and attractive interactions among adatoms and between adatoms and impurities are incorporated. Impurities can be codeposited with the growing material or predeposited prior to growth. The activated exchange… ▽ More The effect of impurities on epitaxial growth in the submonolayer regime is studied using kinetic Monte Carlo simulations of a two-species solid-on-solid growth model. Both species are mobile, and attractive interactions among adatoms and between adatoms and impurities are incorporated. Impurities can be codeposited with the growing material or predeposited prior to growth. The activated exchange of impurities and adatoms is identified as the key kinetic process in the formation of a growth morphology in which the impurities decorate the island edges. The dependence of the island density on flux and coverage is studied in detail. The impurities strongly increase the island density without appreciably changing its power-law dependence on flux, apart from a saturation of the flux dependence at high fluxes and low coverages. A simple analytic theory taking into account only the dependence of the adatom diffusion constant on impurity coverage is shown to provide semi-quantitative agreement with many features observed in the simulations. △ Less

Submitted 27 January, 2000; originally announced January 2000.

Comments: 11 pages, 11 Postscript figures, RevTex

Submonolayer growth with decorated island edges

Authors: Miroslav Kotrla, Joachim Krug, Pavel Smilauer

Abstract: We study the dynamics of island nucleation in the presence of adsorbates using kinetic Monte Carlo simulations of a two-species growth model. Adatoms (A-atoms) and impurities (B-atoms) are codeposited, diffuse and aggregate subject to attractive AA- and AB-interactions. Activated exchange of adatoms with impurities is identified as the key process to maintain decoration of island edges by impuri… ▽ More We study the dynamics of island nucleation in the presence of adsorbates using kinetic Monte Carlo simulations of a two-species growth model. Adatoms (A-atoms) and impurities (B-atoms) are codeposited, diffuse and aggregate subject to attractive AA- and AB-interactions. Activated exchange of adatoms with impurities is identified as the key process to maintain decoration of island edges by impurities during growth. While the presence of impurities strongly increases the island density, a change in the scaling of island density with flux, predicted by a rate equation theory for attachment-limited growth [D. Kandel, Phys. Rev. Lett. 78, 499 (1997)], is not observed. We argue that, within the present model, even completely covered island edges do not provide efficient barriers to attachment. △ Less

Submitted 22 October, 1999; v1 submitted 2 August, 1999; originally announced August 1999.

Comments: 7 pages, 2 postscript figures

Magic Islands and Barriers to Attachment: A Si/Si(111)7x7 Growth Model

Authors: J. Myslivecek, T. Jarolimek, P. Smilauer, B. Voigtlaender, M. Kaestner

Abstract: Surface reconstructions can drastically modify growth kinetics during initial stages of epitaxial growth as well as during the process of surface equilibration after termination of growth. We investigate the effect of activation barriers hindering attachment of material to existing islands on the density and size distribution of islands in a model of homoepitaxial growth on Si(111)7x7 reconstruc… ▽ More Surface reconstructions can drastically modify growth kinetics during initial stages of epitaxial growth as well as during the process of surface equilibration after termination of growth. We investigate the effect of activation barriers hindering attachment of material to existing islands on the density and size distribution of islands in a model of homoepitaxial growth on Si(111)7x7 reconstructed surface. An unusual distribution of island sizes peaked around "magic" sizes and a steep dependence of the island density on the growth rate are observed. "Magic" islands (of a different shape as compared to those obtained during growth) are observed also during surface equilibration. △ Less

Submitted 6 May, 1999; originally announced May 1999.

Comments: 4 pages including 5 figures, REVTeX, submitted to Physical Review B

Dam** of Growth Oscillations

Authors: H. Kallabis, L. Brendel, P. Smilauer, J. Krug, D. E. Wolf

Abstract: Computer simulations and scaling theory are used to investigate the dam** of oscillations during epitaxial growth on high-symmetry surfaces. The crossover from smooth to rough growth takes place after the deposition of (D/F)^δmonolayers, where D and F are the surface diffusion constant and the deposition rate, respectively, and the exponent δ=2/3 on a two-dimensional surface. At the transition… ▽ More Computer simulations and scaling theory are used to investigate the dam** of oscillations during epitaxial growth on high-symmetry surfaces. The crossover from smooth to rough growth takes place after the deposition of (D/F)^δmonolayers, where D and F are the surface diffusion constant and the deposition rate, respectively, and the exponent δ=2/3 on a two-dimensional surface. At the transition, layer-by-layer growth becomes desynchronized on distances larger than a layer coherence length proportional l^2, where l is a typical distance between two-dimensional islands in the submonolayer region of growth. △ Less

Submitted 19 January, 1999; originally announced January 1999.

Comments: to appear in The European Physical Journal B/Surfaces and Interfaces (5 pages, 4 figures)

Fast coarsening in unstable epitaxy with desorption

Authors: Pavel Smilauer, Martin Rost, Joachim Krug

Abstract: Homoepitaxial growth is unstable towards the formation of pyramidal mounds when interlayer transport is reduced due to activation barriers to hop** at step edges. Simulations of a lattice model and a continuum equation show that a small amount of desorption dramatically speeds up the coarsening of the mound array, leading to coarsening exponents between 1/3 and 1/2. The underlying mechanism is… ▽ More Homoepitaxial growth is unstable towards the formation of pyramidal mounds when interlayer transport is reduced due to activation barriers to hop** at step edges. Simulations of a lattice model and a continuum equation show that a small amount of desorption dramatically speeds up the coarsening of the mound array, leading to coarsening exponents between 1/3 and 1/2. The underlying mechanism is the faster growth of larger mounds due to their lower evaporation rate. △ Less

Submitted 2 November, 1998; originally announced November 1998.

Comments: 4 pages, 4 PostScript figures

Noise-assisted Mound Coarsening in Epitaxial Growth

Authors: L. -H. Tang, P. Smilauer, D. D. Vvedensky

Abstract: We propose deposition noise to be an important factor in unstable epitaxial growth of thin films. Our analysis yields a geometrical relation H=(RWL)^2 between the typical mound height W, mound size L, and the film thickness H. Simulations of realistic systems show that the parameter R is a characteristic of the growth conditions, and generally lies in the range 0.2-0.7. The constancy of R in lat… ▽ More We propose deposition noise to be an important factor in unstable epitaxial growth of thin films. Our analysis yields a geometrical relation H=(RWL)^2 between the typical mound height W, mound size L, and the film thickness H. Simulations of realistic systems show that the parameter R is a characteristic of the growth conditions, and generally lies in the range 0.2-0.7. The constancy of R in late-stage coarsening yields a scaling relation between the coarsening exponent 1/z and the mound height exponent βwhich, in the case of saturated mound slope, gives β= 1/z = 1/4. △ Less

Submitted 5 March, 1997; originally announced March 1997.

Comments: 4 pages, RevTex Macros, 3 eps figures

Determination of step--edge barriers to interlayer transport from surface morphology during the initial stages of homoepitaxial growth

Authors: P. Šmilauer, S. Harris

Abstract: We use analytic formulae obtained from a simple model of crystal growth by molecular--beam epitaxy to determine step--edge barriers to interlayer transport. The method is based on information about the surface morphology at the onset of nucleation on top of first--layer islands in the submonolayer coverage regime of homoepitaxial growth. The formulae are tested using kinetic Monte Carlo simulati… ▽ More We use analytic formulae obtained from a simple model of crystal growth by molecular--beam epitaxy to determine step--edge barriers to interlayer transport. The method is based on information about the surface morphology at the onset of nucleation on top of first--layer islands in the submonolayer coverage regime of homoepitaxial growth. The formulae are tested using kinetic Monte Carlo simulations of a solid--on--solid model and applied to estimate step--edge barriers from scanning--tunneling microscopy data on initial stages of Fe(001), Pt(111), and Ag(111) homoepitaxy. △ Less

Submitted 21 March, 1995; originally announced March 1995.

Comments: 4 pages, a Postscript file, uuencoded and compressed. Physical Review B, Rapid Communications, in press.

Report number: IC-DDV-95-001

Re-entrant Layer-by-Layer Etching of GaAs(001)

Authors: T. Kaneko, P. Šmilauer, B. A. Joyce, T. Kawamura, D. D. Vvedensky

Abstract: We report the first observation of re-entrant layer-by-layer etching based on {\it in situ\/} reflection high-energy electron-diffraction measurements. With AsBr$_3$ used to etch GaAs(001), sustained specular-beam intensity oscillations are seen at high substrate temperatures, a decaying intensity with no oscillations at intermediate temperatures, but oscillations reappearing at still lower temp… ▽ More We report the first observation of re-entrant layer-by-layer etching based on {\it in situ\/} reflection high-energy electron-diffraction measurements. With AsBr$_3$ used to etch GaAs(001), sustained specular-beam intensity oscillations are seen at high substrate temperatures, a decaying intensity with no oscillations at intermediate temperatures, but oscillations reappearing at still lower temperatures. Simulations of an atomistic model for the etching kinetics reproduce the temperature ranges of these three regimes and support an interpretation of the origin of this phenomenon as the site-selectivity of the etching process combined with activation barriers to interlayer adatom migration. △ Less

Submitted 21 March, 1995; originally announced March 1995.

Comments: 11 pages, REVTeX 3.0. Physical Review Letters, in press.

Report number: IC-DDV-94-008

Submonolayer Epitaxy Without A Critical Nucleus

Authors: C. Ratsch, P. Šmilauer, A. Zangwill, D. D. Vvedensky

Abstract: The nucleation and growth of two--dimensional islands is studied with Monte Carlo simulations of a pair--bond solid--on--solid model of epitaxial growth. The conventional description of this problem in terms of a well--defined critical island size fails because no islands are absolutely stable against single atom detachment by thermal bond breaking. When two--bond scission is negligible, we find… ▽ More The nucleation and growth of two--dimensional islands is studied with Monte Carlo simulations of a pair--bond solid--on--solid model of epitaxial growth. The conventional description of this problem in terms of a well--defined critical island size fails because no islands are absolutely stable against single atom detachment by thermal bond breaking. When two--bond scission is negligible, we find that the ratio of the dimer dissociation rate to the rate of adatom capture by dimers uniquely indexes both the island size distribution scaling function and the dependence of the island density on the flux and the substrate temperature. Effective pair-bond model parameters are found that yield excellent quantitative agreement with scaling functions measured for Fe/Fe(001). △ Less

Submitted 21 March, 1995; originally announced March 1995.

Comments: 8 pages, Postscript files (the paper and Figs. 1-3), uuencoded, compressed and tarred. Surface Science Letters, in press.

Report number: IC-DDV-94-009

Kinetic Roughening in Growth Models with Diffusion in Higher Dimensions

Authors: P. Šmilauer, M. Kotrla

Abstract: We present results of numerical simulations of kinetic roughening for a growth model with surface diffusion (the Wolf-Villain model) in 3+1 and 4+1~dimensions using lattices of a linear size up to $L=64$ in 3+1~D and $L=32$ in 4+1~D. The effective exponents calculated both from the surface width and from the height--height correlation function are much larger than those expected based on results… ▽ More We present results of numerical simulations of kinetic roughening for a growth model with surface diffusion (the Wolf-Villain model) in 3+1 and 4+1~dimensions using lattices of a linear size up to $L=64$ in 3+1~D and $L=32$ in 4+1~D. The effective exponents calculated both from the surface width and from the height--height correlation function are much larger than those expected based on results in lower dimensions, due to a growth instability which leads to the evolution of large mounded structures on the surface. An increase of the range for incorporation of a freshly deposited particle leads to a decrease of the roughness but does not suppress the instability. △ Less

Submitted 19 July, 1994; originally announced July 1994.

Comments: 8 pages, LaTeX 2.09, IC-DDV-93-004

Scaling of Heteroepitaxial Island Sizes

Authors: C. Ratsch, A. Zangwill, P. Šmilauer

Abstract: Monte Carlo simulations of an atomistic solid-on-solid model are used to study the effect of lattice misfit on the distribution of two-dimensional islands sizes as a function of coverage $Θ$ in the submonolayer aggregation regime of epitaxial growth. Misfit promotes the detachment of atoms from the perimeter of large pseudomorphic islands and thus favors their dissolution into smaller islands th… ▽ More Monte Carlo simulations of an atomistic solid-on-solid model are used to study the effect of lattice misfit on the distribution of two-dimensional islands sizes as a function of coverage $Θ$ in the submonolayer aggregation regime of epitaxial growth. Misfit promotes the detachment of atoms from the perimeter of large pseudomorphic islands and thus favors their dissolution into smaller islands that relieve strain more efficiently. The number density of islands composed of $s$ atoms exhibits scaling in the form \mbox{$N_s(Θ) \sim Θ/ \langle s \rangle^2 \, g(s/\langle s \rangle$)} where $\langle s \rangle$ is the average island size. Unlike the case of homoepitaxy, a rate equation theory based on this observation leads to qualitatively different behavior than observed in the simulations. △ Less

Submitted 15 June, 1994; originally announced June 1994.

Comments: 10 pages, LaTeX 2.09, IC-DDV-94-001

Analytical solution of generalized Burton--Cabrera--Frank equations for growth and post--growth equilibration on vicinal surfaces

Authors: S. Harris, P. Šmilauer

Abstract: We investigate growth on vicinal surfaces by molecular beam epitaxy making use of a generalized Burton--Cabrera--Frank model. Our primary aim is to propose and implement a novel analytical program based on a perturbative solution of the non--linear equations describing the coupled adatom and dimer kinetics. These equations are considered as originating from a fully microscopic description that a… ▽ More We investigate growth on vicinal surfaces by molecular beam epitaxy making use of a generalized Burton--Cabrera--Frank model. Our primary aim is to propose and implement a novel analytical program based on a perturbative solution of the non--linear equations describing the coupled adatom and dimer kinetics. These equations are considered as originating from a fully microscopic description that allows the step boundary conditions to be directly formulated in terms of the sticking coefficients at each step. As an example, we study the importance of diffusion barriers for adatoms hop** down descending steps (Schwoebel effect) during growth and post-growth equilibration of the surface. △ Less

Submitted 15 June, 1994; originally announced June 1994.

Comments: 16 pages, REVTeX 3.0, IC-DDV-94-003

Crossover effects in the Wolf-Villain model of epitaxial growth in 1+1 and 2+1 dimensions

Authors: Pavel Šmilauer, Miroslav Kotrla

Abstract: A simple model of epitaxial growth proposed by Wolf and Villain is investigated using extensive computer simulations. We find an unexpectedly complex crossover behavior of the original model in both 1+1 and 2+1 dimensions. A crossover from the effective growth exponent $β_{\rm eff}\!\approx\!0.37$ to $β_{\rm eff}\!\approx\!0.33$ is observed in 1+1 dimensions, whereas additional crossovers, which… ▽ More A simple model of epitaxial growth proposed by Wolf and Villain is investigated using extensive computer simulations. We find an unexpectedly complex crossover behavior of the original model in both 1+1 and 2+1 dimensions. A crossover from the effective growth exponent $β_{\rm eff}\!\approx\!0.37$ to $β_{\rm eff}\!\approx\!0.33$ is observed in 1+1 dimensions, whereas additional crossovers, which we believe are to the scaling behavior of an Edwards--Wilkinson type, are observed in both 1+1 and 2+1 dimensions. Anomalous scaling due to power--law growth of the average step height is found in 1+1 D, and also at short time and length scales in 2+1~D. The roughness exponents $ζ_{\rm eff}^{\rm c}$ obtained from the height--height correlation functions in 1+1~D ($\approx\!3/4$) and 2+1~D ($\approx\!2/3$) cannot be simultaneously explained by any of the continuum equations proposed so far to describe epitaxial growth. △ Less

Submitted 31 January, 1994; originally announced January 1994.

Comments: 11 pages, REVTeX 3.0, IC-DDV-93-006

Step edge barriers on GaAs(001)

Authors: Pavel Šmilauer, Dimitri D. Vvedensky

Abstract: We investigate the growth kinetics on vicinal GaAs(001) surfaces by making detailed comparisons between reflection high--energy electron--diffraction specular intensity measured near in--phase diffraction conditions and the surface step density obtained from simulations of a solid--on--solid model. Only by including a barrier to interlayer transport and a short--range incorporation process of fr… ▽ More We investigate the growth kinetics on vicinal GaAs(001) surfaces by making detailed comparisons between reflection high--energy electron--diffraction specular intensity measured near in--phase diffraction conditions and the surface step density obtained from simulations of a solid--on--solid model. Only by including a barrier to interlayer transport and a short--range incorporation process of freshly--deposited atoms can the simulations be brought into agreement with the measurements both during growth and during post--growth equilibration of the surface. △ Less

Submitted 29 November, 1993; originally announced November 1993.

Comments: 11 pages, REVTeX 3.0, IC-DDV-93-005