Fine-tunable near-critical Stranski-Krastanov growth of InAs/InP quantum dots
Authors:
Yury Berdnikov,
Pawel Holewa,
Shima Kadkhodazadeh,
Jan Mikolaj Smigiel,
Adrianna Frackowiak,
Aurimas Sakanas,
Kresten Yvind,
Marcin Syperek,
Elizaveta Semenova
Abstract:
Emerging applications of self-assembled semiconductor quantum dot (QD)-based nonclassical light sources emitting in the telecom C-band (1530 to 1565 nm) present challenges in terms of controlled synthesis of their low-density ensembles, critical for device processing with an isolated QD. This work shows how to control the surface density and size of InAs/InP quantum dots over a wide range by tailo…
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Emerging applications of self-assembled semiconductor quantum dot (QD)-based nonclassical light sources emitting in the telecom C-band (1530 to 1565 nm) present challenges in terms of controlled synthesis of their low-density ensembles, critical for device processing with an isolated QD. This work shows how to control the surface density and size of InAs/InP quantum dots over a wide range by tailoring the conditions of Stranski-Krastanow growth. We demonstrate that in the near-critical growth regime, the density of quantum dots can be tuned between $10^7$ and $10^{10} cm^{-2}$. Furthermore, employing both experimental and modeling approaches, we show that the size (and therefore the emission wavelength) of InAs nanoislands on InP can be controlled independently from their surface density. Finally, we demonstrate that our growth method gives low-density ensembles resulting in well-isolated QD-originated emission lines in the telecom C-band.
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Submitted 26 January, 2023;
originally announced January 2023.
