-
Influence of ZnTe based distributed Bragg reflectors on the yellow range luminescence of self assembled CdTe QDs
Authors:
Jean-Guy Rousset,
Jakub Kobak,
Elżbieta Janik,
Magdalena Parlinska-Wojtan,
Tomasz Słupinski,
Jan Suffczyński,
Andrzej Golnik,
Piotr Kossacki,
Michał Nawrocki,
Wojciech Pacuski
Abstract:
The influence of a distributed Bragg reflector composed of ZnTe, MgTe, and MgSe superlattices on photoluminescence of self assembled CdTe quantum dots (QD) emitting in the yellow spectral range is investigated. In the case of QDs grown on a distributed Bragg reflector the photoluminescence intensity is enhanced by more than one order of magnitude, whereas the single QD lines are broadened as compa…
▽ More
The influence of a distributed Bragg reflector composed of ZnTe, MgTe, and MgSe superlattices on photoluminescence of self assembled CdTe quantum dots (QD) emitting in the yellow spectral range is investigated. In the case of QDs grown on a distributed Bragg reflector the photoluminescence intensity is enhanced by more than one order of magnitude, whereas the single QD lines are broadened as compared to the case of QDs grown on a ZnTe buffer. Structural and chemical analysis reveal an unintentional formation of a thin ZnSe layer induced by the growth interruption needed for the deposition of the QDs sheet. Sharp emission lines from individual quantum dots are recovered in the case of a thicker ZnTe layer grown prior to the QDs. This indicates that growth interruptions might be responsible for the QD emission line broadening.
△ Less
Submitted 3 November, 2014;
originally announced November 2014.
-
MBE grown microcavities based on selenium and tellurium compounds
Authors:
J. -G. Rousset,
T. Jakubczyk,
J. Kobak,
R. Rudniewski,
P. Piotrowski,
M. Ściesiek,
E. Janik,
J. Borysiuk,
T. Slupinski,
A. Golnik,
P. Kossacki,
M. Nawrocki,
W. Pacuski
Abstract:
In this work, we present three groups of microcavities: based on selenium compounds only, based on tellurium compounds only, and structures based on mixed selenium and tellurium compounds. We focus on their possible applications in the field of optoelectronic devices and fundamental physics (VCSELs, narrow range light sources, studies of cavity-polariton electrodynamics) in a range of wavelength f…
▽ More
In this work, we present three groups of microcavities: based on selenium compounds only, based on tellurium compounds only, and structures based on mixed selenium and tellurium compounds. We focus on their possible applications in the field of optoelectronic devices and fundamental physics (VCSELs, narrow range light sources, studies of cavity-polariton electrodynamics) in a range of wavelength from 540 to 760 nm.
△ Less
Submitted 15 October, 2013;
originally announced October 2013.
-
MBE growth and characterization of a II-VI distributed Bragg reflector and microcavity lattice-matched to MgTe
Authors:
J. -G. Rousset,
J. Kobak,
T. Slupinski,
T. Jakubczyk,
P. Stawicki,
E. Janik,
M. Tokarczyk,
G. Kowalski,
M. Nawrocki,
W. Pacuski
Abstract:
We present the realization and characterization of a 20 fold, fully lattice-matched epitaxial distributed Bragg reflector based on (Cd,Zn)Te and (Cd,Zn,Mg)Te layers. We also present a microcavity based on (Cd,Zn,Mg)Te containing a (Cd,Zn)Te quantum well. Reflectivity spectra, photoluminescence in real space and in far field are presented.
We present the realization and characterization of a 20 fold, fully lattice-matched epitaxial distributed Bragg reflector based on (Cd,Zn)Te and (Cd,Zn,Mg)Te layers. We also present a microcavity based on (Cd,Zn,Mg)Te containing a (Cd,Zn)Te quantum well. Reflectivity spectra, photoluminescence in real space and in far field are presented.
△ Less
Submitted 6 October, 2012;
originally announced October 2012.
-
Hole Transport in Impurity Band and Valence Bands Studied in Moderately Doped GaAs:Mn Single Crystals
Authors:
T. Slupinski,
J. Caban,
K. Moskalik
Abstract:
We report on simple experiment on temperature-dependent Hall effect measurements in GaMnAs single crystalline samples with Mn composition estimated at 0.05-0.3 at.% which is slightly below the onset of ferromagnetism. Impurity band transport is visible for Mn compositions of ~0.3 at.% as a clear metallic behaviour. The results show interesting situation that the Metal-Insulator transition in GaA…
▽ More
We report on simple experiment on temperature-dependent Hall effect measurements in GaMnAs single crystalline samples with Mn composition estimated at 0.05-0.3 at.% which is slightly below the onset of ferromagnetism. Impurity band transport is visible for Mn compositions of ~0.3 at.% as a clear metallic behaviour. The results show interesting situation that the Metal-Insulator transition in GaAs:Mn occurs within the impurity band which is separated from the valence bands for Mn concentrations studied here. We also discuss on the equilibrium high temperature solubility limit of Mn in GaAs, unknown precisely in the literature.
△ Less
Submitted 6 July, 2007;
originally announced July 2007.
-
Photo-induced spin dynamics in ferromagnetic semiconductor $p$-(Ga,Mn)As
Authors:
Y. Mitsumori,
A. Oiwa,
T. Slupinski,
H. Maruki,
Y. Kashimura,
F. Minami,
H. Munekata
Abstract:
Spin dynamics in ferromagnetic $p$-(Ga,Mn)As ($x$ = 0.011, $T_{C}$ = 30 K) has been studied by carefully comparing the decay time of the photo-induced reflectivity change with the transient behavior of polar Kerr rotation induced by photo-generated carrier spins with a femtosecond light pulse of various polarizations. As to the rising process, the rate of Kerr rotation is found comparable to the…
▽ More
Spin dynamics in ferromagnetic $p$-(Ga,Mn)As ($x$ = 0.011, $T_{C}$ = 30 K) has been studied by carefully comparing the decay time of the photo-induced reflectivity change with the transient behavior of polar Kerr rotation induced by photo-generated carrier spins with a femtosecond light pulse of various polarizations. As to the rising process, the rate of Kerr rotation is found comparable to the generation rate of spin-polarized carriers. For the decay process, the Kerr rotation and reflectivity signal both show the same decay rate at above the $T_{C}$, whereas, below the $T_{C}$, the former becomes slower than the latter. The magnitude of Kerr rotation suggests that 10$^{2}$ Mn spins are revolved by injecting one hole spin. On the basis of these observations, collective rotation of ferromagnetically coupled Mn spins is discussed in terms of $p$-$d$ exchange interaction and successive transverse spin relaxation. Development of another long-lived behavior under external perpendicular magnetic fields is also disclosed.
△ Less
Submitted 11 July, 2003;
originally announced July 2003.
-
Cyclotron Resonance in Ferromagnetic InMnAs/(Al,Ga)Sb Heterostructures
Authors:
G. A. Khodaparast,
J. Kono,
Y. H. Matsuda,
S. Ikeda,
N. Miura,
T. Slupinski,
A. Oiwa,
H. Munekata,
Y. Sun,
F. V. Kyrychenko,
G. D. Sanders,
C. J. Stanton
Abstract:
We report the observation of hole cyclotron resonance (CR) in InMnAs/(Al,Ga)Sb heterostructures in a wide temperature range covering both the paramagnetic and ferromagnetic phases. We observed two pronounced resonances that exhibit drastic changes in position, linewidth, and intensity at a temperature higher than the Curie temperature, indicating possible local magnetic ordering or clustering. W…
▽ More
We report the observation of hole cyclotron resonance (CR) in InMnAs/(Al,Ga)Sb heterostructures in a wide temperature range covering both the paramagnetic and ferromagnetic phases. We observed two pronounced resonances that exhibit drastic changes in position, linewidth, and intensity at a temperature higher than the Curie temperature, indicating possible local magnetic ordering or clustering. We attribute the two resonances to the fundamental CR transitions expected for delocalized valence-band holes in the quantum limt. Using an 8-band {\bf k$\cdot$p} model, which incorporates ferromagnetism within a mean-field approximation, we show that the temperature-dependent CR peak shift is a direct measure of the carrier-Mn exchange interaction. Significant line narrowing was observed at low temperatures, which we interpret as the suppression of localized spin fluctuations.
△ Less
Submitted 3 July, 2003;
originally announced July 2003.
-
Ultrafast optical manipulation of ferromagnetic order in InMnAs/GaSb
Authors:
J. Wang,
G. A. Khodaparast,
J. Kono,
T. Slupinski,
A. Oiwa,
H. Munekata
Abstract:
We have performed a two-color time-resolved magneto-optical Kerr effect (MOKE) study of a ferromagnetic InMnAs/GaSb heterostructure. We observed ultrafast photo-induced changes in the MOKE signal induced by a large density of spin-polarized transient carriers created only within the InMnAs layer using intense 140 fs mid-infrared pulses. Our data clearly demonstrates that magnetic properties, e.g…
▽ More
We have performed a two-color time-resolved magneto-optical Kerr effect (MOKE) study of a ferromagnetic InMnAs/GaSb heterostructure. We observed ultrafast photo-induced changes in the MOKE signal induced by a large density of spin-polarized transient carriers created only within the InMnAs layer using intense 140 fs mid-infrared pulses. Our data clearly demonstrates that magnetic properties, e.g., remanence and coercivity, can be strongly modified. The dependence of these changes on the time delay, pump polarization, pump intensity, and sample temperature is discussed.
△ Less
Submitted 23 July, 2002;
originally announced July 2002.
-
Cyclotron Resonance of Itinerant Holes in Ferromagnetic InMnAs/GaSb Heterostructures
Authors:
G. A. Khodaparast,
J. Kono,
Y. H. Matsuda,
T. Ikaida,
S. Ikeda,
N. Miura,
T. Slupinski,
A. Oiwa,
H. Munekata
Abstract:
We report the first observation of hole cyclotron resonance (CR) in ferromagnetic InMnAs/GaSb heterostructures both in the high-temperature paramagnetic phase and the low-temperature ferromagnetic phase. We clearly resolve two resonances that exhibit strong temperature dependence in position, linewidth, and intensity. We attribute the two resonances to the so-called fundamental CR transitions ex…
▽ More
We report the first observation of hole cyclotron resonance (CR) in ferromagnetic InMnAs/GaSb heterostructures both in the high-temperature paramagnetic phase and the low-temperature ferromagnetic phase. We clearly resolve two resonances that exhibit strong temperature dependence in position, linewidth, and intensity. We attribute the two resonances to the so-called fundamental CR transitions expected for delocalized holes in the valence band in the magnetic quantum limit, demonstrating the existence of $p$-like itinerant holes that are describable within the Luttinger-Kohn effective mass theory.
△ Less
Submitted 19 July, 2002;
originally announced July 2002.
-
Electronic structure of In$_{1-x}$Mn$_x$As studied by photoemission spectroscopy: Comparison with Ga$_{1-x}$Mn$_x$As
Authors:
J. Okabayashi,
T. Mizokawa,
D. D. Sarma,
A. Fujimori,
T. Slupinski,
A. Oiwa,
H. Munekata
Abstract:
We have investigated the electronic structure of the $p$-type diluted magnetic semiconductor In$_{1-x}$Mn$_x$As by photoemission spectroscopy. The Mn 3$d$ partial density of states is found to be basically similar to that of
Ga$_{1-x}$Mn$_x$As. However, the impurity-band like states near the top of the valence band have not been observed by angle-resolved photoemission spectroscopy unlike Ga…
▽ More
We have investigated the electronic structure of the $p$-type diluted magnetic semiconductor In$_{1-x}$Mn$_x$As by photoemission spectroscopy. The Mn 3$d$ partial density of states is found to be basically similar to that of
Ga$_{1-x}$Mn$_x$As. However, the impurity-band like states near the top of the valence band have not been observed by angle-resolved photoemission spectroscopy unlike Ga$_{1-x}$Mn$_x$As. This difference would explain the difference in transport, magnetic and optical properties of
In$_{1-x}$Mn$_x$As and Ga$_{1-x}$Mn$_x$As. The different electronic structures are attributed to the weaker Mn 3$d$ - As 4$p$ hybridization in In$_{1-x}$Mn$_x$As than in Ga$_{1-x}$Mn$_x$As.
△ Less
Submitted 4 March, 2002;
originally announced March 2002.
-
Ferromagnetic semiconductor (In,Ga,Mn)As with Curie temperature above 100 K
Authors:
T. Slupinski,
H. Munekata,
A. Oiwa
Abstract:
We have grown (InyGa1-y)1-xMnxAs ferromagnetic semiconductor layers with Mn composition x up to 0.13 on InP substrates by molecular beam epitaxy. Near the lattice-matched composition, i.e., y ~ 0.53, the Curie temperature increases linearly with the ferromagnetically effective Mn composition x_eff, following the empirical equation T_C=1300x_eff. We obtained Curie temperatures above 100 K when x…
▽ More
We have grown (InyGa1-y)1-xMnxAs ferromagnetic semiconductor layers with Mn composition x up to 0.13 on InP substrates by molecular beam epitaxy. Near the lattice-matched composition, i.e., y ~ 0.53, the Curie temperature increases linearly with the ferromagnetically effective Mn composition x_eff, following the empirical equation T_C=1300x_eff. We obtained Curie temperatures above 100 K when x is relatively high (x>0.1; x_eff>0.08) and the hole concentration is in the order of 10^19 cm^-3.
△ Less
Submitted 21 January, 2002;
originally announced January 2002.
