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Measurement of the Spin-Transfer-Torque Vector in Magnetic Tunnel Junctions
Authors:
J. C. Sankey,
Y. -T. Cui,
R. A. Buhrman,
D. C. Ralph,
J. Z. Sun,
J. C. Slonczewski
Abstract:
Spin-polarized currents can transfer spin angular momentum to a ferromagnet, generating a torque that can efficiently reorient its magnetization. Achieving quantitative measurements of the spin-transfer-torque vector in magnetic tunnel junctions (MTJs) is important for understanding fundamental mechanisms affecting spin-dependent tunneling, and for develo** magnetic memories and nanoscale micr…
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Spin-polarized currents can transfer spin angular momentum to a ferromagnet, generating a torque that can efficiently reorient its magnetization. Achieving quantitative measurements of the spin-transfer-torque vector in magnetic tunnel junctions (MTJs) is important for understanding fundamental mechanisms affecting spin-dependent tunneling, and for develo** magnetic memories and nanoscale microwave oscillators. Here we present direct measurements of both the magnitude and direction of the spin torque in Co60Fe20B20/MgO/Co60Fe20B20 MTJs. At low bias V, the differential torque vector d{tau}/dV lies in the plane defined by the electrode magnetizations, and its magnitude is in excellent agreement with a prediction for highly-spin-polarized tunneling. With increasing bias, the in-plane component d{tau}_{parallel}/dV remains large, in striking contrast to the decreasing magnetoresistance ratio. The differential torque vector also rotates out of the plane under bias; we measure a perpendicular component tau_{perp}(V) with bias dependence proportional to V^2 for low V, that becomes as large as 30% of the in-plane torque.
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Submitted 29 May, 2007;
originally announced May 2007.
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The role of electron scattering in magnetization relaxation in thin Ni$_{81}$Fe$_{19}$ films
Authors:
S. Ingvarsson,
L. Ritchie,
X. Y. Liu,
Gang Xiao,
J. C. Slonczewski,
P. L. Trouilloud,
R. H. Koch
Abstract:
We observe a strong correlation between magnetization relaxation and electrical resistivity in thin Permalloy (Ni$_{81}$Fe$_{19}$, ``Py'') films. Electron scattering rates in the films were affected by varying film thickness and deposition conditions. This shows that the magnetization relaxation mechanism is analogous to ``bulk'' relaxation, where phonon scattering in bulk is replaced by surface…
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We observe a strong correlation between magnetization relaxation and electrical resistivity in thin Permalloy (Ni$_{81}$Fe$_{19}$, ``Py'') films. Electron scattering rates in the films were affected by varying film thickness and deposition conditions. This shows that the magnetization relaxation mechanism is analogous to ``bulk'' relaxation, where phonon scattering in bulk is replaced by surface and defect scattering in thin films. Another interesting finding is the increased magnetization dam** with Pt layers adjacent to the Py films. This is attributed to the strong spin-orbit coupling in Pt, resulting in spin-flip scattering of electrons that enter from the Py.
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Submitted 12 August, 2002;
originally announced August 2002.
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Exchange-driven Magnetic Excitation and Integrated Magnetoelectronics
Authors:
J. C. Slonczewski
Abstract:
Theory and recent experiments concerning exchange-driven magnetic excitation (EDME) are reviewed. This phenomenon employs the exchange field produced by a narrowly distributed spin-polarized electron current to excite Larmor precession in a magnetic film or particle. Predicted threshold currents for such excitation of both two-dimensional spin-waves and of monodomain reversal are now experimenta…
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Theory and recent experiments concerning exchange-driven magnetic excitation (EDME) are reviewed. This phenomenon employs the exchange field produced by a narrowly distributed spin-polarized electron current to excite Larmor precession in a magnetic film or particle. Predicted threshold currents for such excitation of both two-dimensional spin-waves and of monodomain reversal are now experimentally supported at both helium and ambient temperatures. The present status of this field suggests a high potential for applications of EDME to the write operation of magnetic recording and, when combined with tunneling magnetoresistance, to a memory latch using sub-200 nm lithography. This potential is buoyed by very recent experiments at Cornell University implying the theoretical availability of almost hundred-fold advantage in excitation efficiency favoring exchange fields over Maxwell fields.
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Submitted 2 May, 2002;
originally announced May 2002.
