Showing 1–8 of 8 results for author: Slablab, A

Light extraction from CVD-grown <400> single crystal diamond nanopillars. Selective charge state manipulations with 0V SF6 plasma

Authors: Mariusz Radtke, Abdallah Slablab, Sandra Van Vlierberghe, Chao-Nan Lin, Ying-Jie Lu, Chong-Xin Shan

Abstract: We investigate the possibilities to realize light extraction from single crystal diamond (SCD) nanopillars. This was achieved by dedicated 519 nm laser-induced spin-state initiation of negatively charged nitrogen vacancies (NV-). For the first time, we present possibility to perform effective spin-readout of NV(-)s that were naturally generated by the growth process during chemical vapor depositio… ▽ More We investigate the possibilities to realize light extraction from single crystal diamond (SCD) nanopillars. This was achieved by dedicated 519 nm laser-induced spin-state initiation of negatively charged nitrogen vacancies (NV-). For the first time, we present possibility to perform effective spin-readout of NV(-)s that were naturally generated by the growth process during chemical vapor deposition (CVD) synthesis within SCD without any post-growth implantation strategies. Applied diamond was neither implanted with 14N+, nor was the CVD synthesized SCD annealed, making the presence of nitrogen vacancy a remarkable phenomenon. To investigate the possibility to realize light extraction by the utilization of NV(-) bright photoluminescence at room temperature and ambient conditions with the waveguiding effect, we have performed a top-down nanofabrication of SCD by electron beam lithography (EBL) and dry inductively-coupled plasma/ reactive ion etching (ICP-RIE) to generate light focusing nanopillars. In addition, we have fluorinated the diamond's surface by dedicated 0V ICP plasma. Light extraction and spin manipulations were performed with photoluminescence (PL) spectroscopy and optically detected magnetic resonance (ODMR) at room temperature. We have observed a remarkable effect based on the selective 0V SF6 plasma etching and surprisingly, in contrast to literature findings, deactivation of NV(-) centers. We discuss the possible deactivation mechanism in detail regarding 2-dimensional hole gas (2HG) and Fermi band bending. △ Less

Submitted 14 January, 2020; originally announced January 2020.

Reliable Nanofabrication of Single-Crystal Diamond Photonic Nanostructures for Nanoscale Sensing

Authors: Mariusz Radtke, Richard Nelz, Abdallah Slablab, Elke Neu

Abstract: In this manuscript, we outline a reliable procedure to manufacture photonic nanostructures from single-crystal diamond (SCD). Photonic nanostructures, in our case SCD nanopillars on thin (< 1$μ$m) platforms, are highly relevant for nanoscale sensing. The presented top-down procedure includes electron beam lithography (EBL) as well as reactive ion etching (RIE). Our method introduces a novel type o… ▽ More In this manuscript, we outline a reliable procedure to manufacture photonic nanostructures from single-crystal diamond (SCD). Photonic nanostructures, in our case SCD nanopillars on thin (< 1$μ$m) platforms, are highly relevant for nanoscale sensing. The presented top-down procedure includes electron beam lithography (EBL) as well as reactive ion etching (RIE). Our method introduces a novel type of inter-layer, namely silicon, that significantly enhances the adhesion of hydrogen silsesquioxane (HSQ) electron beam resist to SCD and avoids sample charging during EBL. In contrast to previously used adhesion layers, our silicon layer can be removed using a highly-selective RIE step which is not damaging HSQ mask structures. We thus refine published nanofabrication processes to ease a higher process reliability especially in the light of the advancing commercialization of SCD sensor devices. △ Less

Submitted 24 October, 2019; v1 submitted 26 September, 2019; originally announced September 2019.

Comments: v2: accepted for publication in Micromachines 2019, 10(11), 718; https://doi.org/10.3390/mi10110718

Journal ref: Micromachines 2019, 10(11), 718

Nanoscale sensing based on nitrogen vacancy centersin single crystal diamond and nanodiamonds:achievements and challenges

Authors: Mariusz Radtke, Ettore Bernardi, Abdallah Slablab, Richard Nelz, Elke Neu

Abstract: Powered by the mutual developments in instrumentation, materials andtheoretical descriptions, sensing and imaging capabilities of quantum emitters insolids have significantly increased in the past two decades. Quantum emitters insolids, whose properties resemble those of atoms and ions, provide alternative waysto probing natural and artificial nanoscopic systems with minimum disturbance andultimat… ▽ More Powered by the mutual developments in instrumentation, materials andtheoretical descriptions, sensing and imaging capabilities of quantum emitters insolids have significantly increased in the past two decades. Quantum emitters insolids, whose properties resemble those of atoms and ions, provide alternative waysto probing natural and artificial nanoscopic systems with minimum disturbance andultimate spatial resolution. Among those emerging quantum emitters, the nitrogen-vacancy (NV) color center in diamond is an outstanding example due to its intrinsicproperties at room temperature (highly-luminescent, photo-stable, biocompatible,highly-coherent spin states). This review article summarizes recent advances andachievements in using NV centers within nano- and single crystal diamonds in sensingand imaging. We also highlight prevalent challenges and material aspects for differenttypes of diamond and outline the main parameters to consider when using color centersas sensors. As a novel sensing resource, we highlight the properties of NV centersas light emitting electrical dipoles and their coupling to other nanoscale dipoles e.g.graphene. △ Less

Submitted 9 September, 2019; originally announced September 2019.

Near-field energy transfer between a luminescent 2D material and color centers in diamond

Authors: Richard Nelz, Mariusz Radtke, Abdallah Slablab, Mehran Kianinia, Chi Li, Zai-Quan Xu, Carlo Bradac, Igor Aharonovich, Elke Neu

Abstract: Energy transfer between fluorescent probes lies at the heart of many applications ranging from bio-sensing and -imaging to enhanced photo-detection and light harvesting. In this work, we study Förster resonance energy transfer (FRET) between shallow defects in diamond --- nitrogen-vacancy (NV) centers --- and atomically-thin, two-dimensional materials --- tungsten diselenide (WSe$_2$). By means of… ▽ More Energy transfer between fluorescent probes lies at the heart of many applications ranging from bio-sensing and -imaging to enhanced photo-detection and light harvesting. In this work, we study Förster resonance energy transfer (FRET) between shallow defects in diamond --- nitrogen-vacancy (NV) centers --- and atomically-thin, two-dimensional materials --- tungsten diselenide (WSe$_2$). By means of fluorescence lifetime imaging, we demonstrate the occurrence of FRET in the WSe$_2$/NV system. Further, we show that in the coupled system, NV centers provide an additional excitation pathway for WSe$_2$ photoluminescence. Our results constitute the first step towards the realization of hybrid quantum systems involving single-crystal diamond and two-dimensional materials that may lead to new strategies for studying and controlling spin transfer phenomena and spin valley physics. △ Less

Submitted 24 October, 2019; v1 submitted 29 July, 2019; originally announced July 2019.

Comments: v2: accepted for publication in Advanced Quantum Technologies

Towards wafer-scale diamond nano- and quantum technologies

Authors: Richard Nelz, Johannes Görlitz, Dennis Herrmann, Abdallah Slablab, Michel Challier, Mariusz Radtke, Martin Fischer, Stefan Gsell, Matthias Schreck, Christoph Becher, Elke Neu

Abstract: We investigate native nitrogen (NV) and silicon vacancy (SiV) color centers in commercially available, heteroepitaxial, wafer-sized, mm thick, single-crystal diamond. We observe single, native NV centers with a density of roughly 1 NV per $μm^3$ and moderate coherence time ($T_2 = 5 μs$) embedded in an ensemble of SiV centers. Low-temperature spectroscopy of the SiV zero phonon line fine structure… ▽ More We investigate native nitrogen (NV) and silicon vacancy (SiV) color centers in commercially available, heteroepitaxial, wafer-sized, mm thick, single-crystal diamond. We observe single, native NV centers with a density of roughly 1 NV per $μm^3$ and moderate coherence time ($T_2 = 5 μs$) embedded in an ensemble of SiV centers. Low-temperature spectroscopy of the SiV zero phonon line fine structure witnesses high crystalline quality of the diamond especially close to the growth surface, consistent with a reduced dislocation density. Using ion implantation and plasma etching, we verify the possibility to fabricate nanostructures with shallow color centers rendering our diamond material promising for fabrication of nanoscale sensing devices. As this diamond is available in wafer-sizes up to $100 mm$ it offers the opportunity to up-scale diamond-based device fabrication. △ Less

Submitted 22 October, 2018; originally announced October 2018.

Enhancement of bulk second-harmonic generation from silicon nitride films by material composition

Authors: K. Koskinen, R. Czaplicki, A. Slablab, T. Ning, A. Hermans, B. Kuyken, V. Mittal, G. S. Murugan, T. Niemi, R. Baets, M. Kaurenen

Abstract: We present a comprehensive tensorial characterization of second-harmonic generation from silicon nitride films with varying composition. The samples were fabricated using plasma-enhanced chemical vapor deposition, and the material composition was varied by the reactive gas mixture in the process. We found a six-fold enhancement between the lowest and highest second-order susceptibility, with the h… ▽ More We present a comprehensive tensorial characterization of second-harmonic generation from silicon nitride films with varying composition. The samples were fabricated using plasma-enhanced chemical vapor deposition, and the material composition was varied by the reactive gas mixture in the process. We found a six-fold enhancement between the lowest and highest second-order susceptibility, with the highest value of approximately 5 pm/V from the most silicon-rich sample. Moreover, the optical losses were found to be sufficiently small (below 6 dB/cm) for applications. The tensorial results show that all samples retain in-plane isotropy independent of silicon content, highlighting the controllability of the fabrication process. △ Less

Submitted 3 October, 2017; v1 submitted 9 August, 2017; originally announced August 2017.

Comments: 4 pages, 3 figures, 2 tables; Re-submitted to Optics Letters

Journal ref: Optics Letters 42 (2017) 5030-5033

Second-harmonic generation from coupled plasmon modes in a single dimer of gold nanospheres

Authors: A. Slablab, L. Le Xuan, M. Zielinski, Y. de Wilde, V. Jacques, D. Chauvat, J. -F. Roch

Abstract: We show that a dimer made of two gold nanospheres exhibits a remarkable efficiency for second-harmonic generation under femtosecond optical excitation. The detectable nonlinear emission for the given particle size and excitation wavelength arises when the two nanoparticles are as close as possible to contact, as in situ controlled and measured using the tip of an atomic force microscope. The excit… ▽ More We show that a dimer made of two gold nanospheres exhibits a remarkable efficiency for second-harmonic generation under femtosecond optical excitation. The detectable nonlinear emission for the given particle size and excitation wavelength arises when the two nanoparticles are as close as possible to contact, as in situ controlled and measured using the tip of an atomic force microscope. The excitation wavelength dependence of the second-harmonic signal supports a coupled plasmon resonance origin with radiation from the dimer gap. This nanometer-size light source might be used for high-resolution near-field optical microscopy. △ Less

Submitted 5 September, 2011; v1 submitted 26 August, 2011; originally announced August 2011.

Comments: 6 pages, 5 figures

Journal ref: Opt. Exp. 20, 220 (2012)

Surface-induced charge state conversion of nitrogen-vacancy defects in nanodiamonds

Authors: L. Rondin, G. Dantelle, A. Slablab, F. Grosshans, F. Treussart, P. Bergonzo, S. Perruchas, T. Gacoin, M. Chaigneau, H. -C. Chang, V. Jacques, J. -F. Roch

Abstract: We present a study of the charge state conversion of single nitrogen-vacancy (NV) defects hosted in nanodiamonds (NDs). We first show that the proportion of negatively-charged NV$^{-}$ defects, with respect to its neutral counterpart NV$^{0}$, decreases with the size of the ND. We then propose a simple model based on a layer of electron traps located at the ND surface which is in good agreement wi… ▽ More We present a study of the charge state conversion of single nitrogen-vacancy (NV) defects hosted in nanodiamonds (NDs). We first show that the proportion of negatively-charged NV$^{-}$ defects, with respect to its neutral counterpart NV$^{0}$, decreases with the size of the ND. We then propose a simple model based on a layer of electron traps located at the ND surface which is in good agreement with the recorded statistics. By using thermal oxidation to remove the shell of amorphous carbon around the NDs, we demonstrate a significant increase of the proportion of NV$^{-}$ defects in 10-nm NDs. These results are invaluable for further understanding, control and use of the unique properties of negatively-charged NV defects in diamond △ Less

Submitted 19 October, 2010; v1 submitted 13 August, 2010; originally announced August 2010.

Comments: 6 pages, 4 figures

Journal ref: Phys. Rev. B 82, 115449 (2010)