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Formation of silicon nanocrystals in silicon carbide using flash lamp annealing
Authors:
C. Weiss,
M. Schnabel,
S. Prucnal,
J. Hofmann,
A. Reichert,
T. Fehrenbach,
W. Skorupa,
S. Janz
Abstract:
During the formation of Si nanocrystals (Si NC) in Si$_x$C$_{1-x}$ layers via solid-phase crystallization, the unintended formation of nanocrystalline SiC reduces the minority carrier lifetime and therefore the performance of Si$_x$C$_{1-x}$ as an absorber layer in solar cells. A significant reduction in the annealing time may suppress the crystallization of the SiC matrix while maintaining the fo…
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During the formation of Si nanocrystals (Si NC) in Si$_x$C$_{1-x}$ layers via solid-phase crystallization, the unintended formation of nanocrystalline SiC reduces the minority carrier lifetime and therefore the performance of Si$_x$C$_{1-x}$ as an absorber layer in solar cells. A significant reduction in the annealing time may suppress the crystallization of the SiC matrix while maintaining the formation of Si NC. In this study, we investigated the crystallization of stoichiometric SiC and Si-rich SiC using conventional rapid thermal annealing (RTA) and nonequilibrium millisecond range flash lamp annealing (FLA). The investigated Si$_x$C$_{1-x}$ films were prepared by plasma-enhanced chemical vapor deposition and annealed at temperatures from 700$°$C to 1100$°$C for RTA and at flash energies between 34 J/cm$^2$ and 62 J/cm$^2$ for FLA. GIXRD and FTIR were conducted to investigate hydrogen effusion, Si and SiC NC growth, and SiC crystallinity. Both the Si content and the choice of the annealing process affect the crystallization behavior. It is shown that under certain conditions, FLA can be successfully utilized for the formation of Si NC in a SiC matrix, which closely resembles Si NC in a SiC matrix achieved by RTA. The samples must have excess Si, and the flash energy should not exceed 40 J/cm$^2$ and 47 J/cm$^2$ for Si$_{0.63}$C$_{0.37}$ and Si$_{0.77}$C$_{0.23}$ samples, respectively. Under these conditions, FLA succeeds in producing Si NC of a given size in less crystalline SiC than RTA does. This result is discussed in terms of nucleation and crystal growth using classical crystallization theory. For FLA and RTA samples, an opposite relationship between NC size and Si content was observed and attributed either to the dependence of H effusion on Si content or to the optical absorption properties of the materials, which also depend on the Si content.
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Submitted 15 May, 2020;
originally announced May 2020.
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Superconductivity in single-crystalline, aluminum- and gallium-hyperdoped germanium
Authors:
Slawomir Prucnal,
Viton Heera,
René Hübner,
Mao Wang,
Grzegorz P. Mazur,
Michał J. Grzybowski,
Xin Qin,
Ye Yuan,
Matthias Voelskow,
Wolfgang Skorupa,
Lars Rebohle,
Manfred Helm,
Maciej Sawicki,
Shengqiang Zhou
Abstract:
Superconductivity in group IV semiconductors is desired for hybrid devices combining both semiconducting and superconducting properties. Following boron doped diamond and Si, superconductivity has been observed in gallium doped Ge, however the obtained specimen is in polycrystalline form [Herrmannsdörfer et al., Phys. Rev. Lett. 102, 217003 (2009)]. Here, we present superconducting single-crystall…
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Superconductivity in group IV semiconductors is desired for hybrid devices combining both semiconducting and superconducting properties. Following boron doped diamond and Si, superconductivity has been observed in gallium doped Ge, however the obtained specimen is in polycrystalline form [Herrmannsdörfer et al., Phys. Rev. Lett. 102, 217003 (2009)]. Here, we present superconducting single-crystalline Ge hyperdoped with gallium or aluminium by ion implantation and rear-side flash lamp annealing. The maximum concentration of Al and Ga incorporated into substitutional positions in Ge is eight times higher than the equilibrium solid solubility. This corresponds to a hole concentration above 10^21 cm-3. Using density functional theory in the local density approximation and pseudopotential plane-wave approach, we show that the superconductivity in p-type Ge is phonon-mediated. According to the ab initio calculations the critical superconducting temperature for Al- and Ga-doped Ge is in the range of 0.45 K for 6.25 at.% of dopant concentration being in a qualitative agreement with experimentally obtained values.
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Submitted 15 April, 2019;
originally announced April 2019.
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Strain and Band-Gap Engineering in Ge-Sn Alloys via P Do**
Authors:
Slawomir Prucnal,
Yonder Berencén,
Mao Wang,
Jörg Grenzer,
Matthias Voelskow,
Rene Hübner,
Yuji Yamamoto,
Alexander Scheit,
Florian Bärwolf,
Vitaly Zviagin,
Rüdiger Schmidt-Grund,
Marius Grundmann,
Jerzy Żuk,
Marcin Turek,
Andrzej Droździel,
Krzysztof Pyszniak,
Robert Kudrawiec,
Maciej P. Polak,
Lars Rebohle,
Wolfgang Skorupa,
Manfred Helm,
Shengqiang Zhou
Abstract:
Ge with a quasi-direct band gap can be realized by strain engineering, alloying with Sn, or ultrahigh n-type do**. In this work, we use all three approaches together to fabricate direct-band-gap Ge-Sn alloys. The heavily doped n-type Ge-Sn is realized with CMOS-compatible nonequilibrium material processing. P is used to form highly doped n-type Ge-Sn layers and to modify the lattice parameter of…
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Ge with a quasi-direct band gap can be realized by strain engineering, alloying with Sn, or ultrahigh n-type do**. In this work, we use all three approaches together to fabricate direct-band-gap Ge-Sn alloys. The heavily doped n-type Ge-Sn is realized with CMOS-compatible nonequilibrium material processing. P is used to form highly doped n-type Ge-Sn layers and to modify the lattice parameter of P-doped Ge-Sn alloys. The strain engineering in heavily-P-doped Ge-Sn films is confirmed by x-ray diffraction and micro Raman spectroscopy. The change of the band gap in P-doped Ge-Sn alloy as a function of P concentration is theoretically predicted by density functional theory and experimentally verified by near-infrared spectroscopic ellipsometry. According to the shift of the absorption edge, it is shown that for an electron concentration greater than 1x10^20 cm-3 the band-gap renormalization is partially compensated by the Burstein-Moss effect. These results indicate that Ge-based materials have high potential for use in near-infrared optoelectronic devices, fully compatible with CMOS technology.
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Submitted 7 January, 2019;
originally announced January 2019.
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Breaking the do** limit in silicon by deep impurities
Authors:
Mao Wang,
A. Debernardi,
Y. Berencén,
R. Heller,
Chi Xu,
Ye Yuan,
Yufang Xie,
R. Böttger,
L. Rebohle,
W. Skorupa,
M. Helm,
S. Prucnal,
Shengqiang Zhou
Abstract:
N-type do** in Si by shallow impurities, such as P, As and Sb, exhibits an intrinsic limit due to the Fermi-level pinning via defect complexes at high do** concentrations. Here we demonstrate that do** Si with the chalcogen Te by non-equilibrium processing, a deep double donor, can exceed this limit and yield higher electron concentrations. In contrast to shallow impurities, both the interst…
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N-type do** in Si by shallow impurities, such as P, As and Sb, exhibits an intrinsic limit due to the Fermi-level pinning via defect complexes at high do** concentrations. Here we demonstrate that do** Si with the chalcogen Te by non-equilibrium processing, a deep double donor, can exceed this limit and yield higher electron concentrations. In contrast to shallow impurities, both the interstitial Te fraction decreases with increasing do** concentration and substitutional Te dimers become the dominant configuration as effective donors, leading to a non-saturating carrier concentration as well as to an insulator-to-metal transition. First-principle calculations reveal that the Te dimers possess the lowest formation energy and donate two electrons per dimer to the conduction band. These results provide novel insight into physics of deep impurities and lead to a possible solution for the ultra-high electron concentration needed in today's Si-based nanoelectronics.
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Submitted 1 November, 2018; v1 submitted 17 September, 2018;
originally announced September 2018.
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Extended Infrared Photoresponse in Te-Hyperdoped Si at Room Temperature
Authors:
Mao Wang,
Y. Berencén,
E. García-Hemme,
S. Prucnal,
R. Hübner,
Ye Yuan,
Chi Xu,
L. Rebohle,
R. Böttger,
R. Heller,
H. Schneider,
W. Skorupa,
M. Helm,
Shengqiang Zhou
Abstract:
Presently, silicon photonics requires photodetectors that are sensitive in a broad infrared range, can operate at room temperature, and are suitable for integration with the existing Si-technology process. Here, we demonstrate strong room-temperature sub-band-gap photoresponse of photodiodes based on Si hyperdoped with tellurium. The epitaxially recrystallized Te-hyperdoped Si layers are developed…
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Presently, silicon photonics requires photodetectors that are sensitive in a broad infrared range, can operate at room temperature, and are suitable for integration with the existing Si-technology process. Here, we demonstrate strong room-temperature sub-band-gap photoresponse of photodiodes based on Si hyperdoped with tellurium. The epitaxially recrystallized Te-hyperdoped Si layers are developed by ion implantation combined with pulsed-laser melting and incorporate Te-dopant concentrations several orders of magnitude above the solid solubility limit. With increasing Te concentration, the Te-hyperdoped layer changes from insulating to quasi-metallic behavior with a finite conductivity as the temperature tends to zero. The optical absorptance is found to increase monotonically with increasing Te concentration and extends well into the mid-infrared range. Temperature-dependent optoelectronic photoresponse unambiguously demonstrates that the extended infrared photoresponsivity from Te-hyperdoped Si p-n photodiodes is mediated by a Te intermediate band within the upper half of the Si band gap. This work contributes to pave the way toward establishing a Si-based broadband infrared photonic system operating at room temperature.
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Submitted 4 September, 2018;
originally announced September 2018.
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CMOS-compatible controlled hyperdo** of silicon nanowires
Authors:
Yonder Berencén,
Slawomir Prucnal,
Wolfhard Möller,
René Hübner,
Lars Rebohle,
Roman Böttger,
Markus Glaser,
Tommy Schönherr,
Ye Yuan,
Mao Wang,
Yordan M. Georgiev,
Artur Erbe,
Alois Lugstein,
Manfred Helm,
Shengqiang Zhou,
Wolfgang Skorupa
Abstract:
Hyperdo** consists of the intentional introduction of deep-level dopants into a semiconductor in excess of equilibrium concentrations. This causes a broadening of dopant energy levels into an intermediate band between the valence and conduction bands.[1,2] Recently, bulk Si hyperdoped with chalcogens or transition metals has been demonstrated to be an appropriate intermediate-band material for S…
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Hyperdo** consists of the intentional introduction of deep-level dopants into a semiconductor in excess of equilibrium concentrations. This causes a broadening of dopant energy levels into an intermediate band between the valence and conduction bands.[1,2] Recently, bulk Si hyperdoped with chalcogens or transition metals has been demonstrated to be an appropriate intermediate-band material for Si-based short-wavelength infrared photodetectors.[3-5] Intermediate-band nanowires could potentially be used instead of bulk materials to overcome the Shockley-Queisser limit and to improve efficiency in solar cells,[6-9] but fundamental scientific questions in hyperdo** Si nanowires require experimental verification. The development of a method for obtaining controlled hyperdo** levels at the nanoscale concomitant with the electrical activation of dopants is, therefore, vital to understanding these issues. Here, we show a CMOS-compatible technique based on non-equilibrium processing for the controlled do** of Si at the nanoscale with dopant concentrations several orders of magnitude greater than the equilibrium solid solubility. Through the nanoscale spatially controlled implantation of dopants, and a bottom-up template-assisted solid phase recrystallization of the nanowires with the use of millisecond-flash lamp annealing, we form Se-hyperdoped Si/SiO2 core/shell nanowires that have a room-temperature sub-band gap optoelectronic photoresponse when configured as a photoconductor device.
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Submitted 20 February, 2018;
originally announced February 2018.
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Realizing the insulator-to-metal transition in Se-hyperdoped Si via non-equilibrium material processing
Authors:
F. Liu,
S. Prucnal,
Y. Berencén,
Z. Zhang,
Y. Yuan,
Y. Liu,
R. Heller,
R. Boettger,
L. Rebohle,
W. Skorupa,
M. Helm,
S. Zhou
Abstract:
We report on the insulator-to-metal transition in Se-hyperdoped Si layers driven by manipulating the Se concentration via non-equilibrium material processing, i.e. ion implantation followed by millisecond-flash lamp annealing. Electrical transport measurements reveal an increase of carrier concentration and conductivity with increasing Se concentration. For the semi-insulating sample with Se conce…
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We report on the insulator-to-metal transition in Se-hyperdoped Si layers driven by manipulating the Se concentration via non-equilibrium material processing, i.e. ion implantation followed by millisecond-flash lamp annealing. Electrical transport measurements reveal an increase of carrier concentration and conductivity with increasing Se concentration. For the semi-insulating sample with Se concentrations below the Mott limit, quantitative analysis of the temperature dependence of conductivity indicates a variable-range hop** mechanism with an exponent of s = 1/2 rather than 1/4, which implies a Coulomb gap at the Fermi level. The observed insulator-to-metal transition is attributed to the formation of an intermediate band in the Se-hyperdoped Si layers.
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Submitted 28 July, 2017;
originally announced July 2017.
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Interaction between magnetic moments and itinerant carriers in d0 ferromagnetic SiC
Authors:
Yu Liu,
Ye Yuan,
Fang Liu,
Roman Boettger,
Wolfgang Anwand,
Yutian Wang,
Anna Semisalova,
Alexey N. Ponomaryov,
Xia Lu,
Alpha T. N'Diaye,
Elke Arenholz,
Viton Heera,
Wolfgang Skorupa,
Manfred Helm,
Shengqiang Zhou
Abstract:
Elucidating the interaction between magnetic moments and itinerant carriers is an important step to spintronic applications. Here, we investigate magnetic and transport properties in d0 ferromagnetic SiC single crystals prepared by postimplantation pulsed laser annealing. Magnetic moments are contributed by the p states of carbon atoms, but their magnetic circular dichroism is different from that…
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Elucidating the interaction between magnetic moments and itinerant carriers is an important step to spintronic applications. Here, we investigate magnetic and transport properties in d0 ferromagnetic SiC single crystals prepared by postimplantation pulsed laser annealing. Magnetic moments are contributed by the p states of carbon atoms, but their magnetic circular dichroism is different from that in semi-insulating SiC samples. The anomalous Hall effect and negative magnetoresistance indicate the influence of d0 spin order on free carriers. The ferromagnetism is relatively weak in N-implanted SiC compared with that in Al-implanted SiC after annealing. The results suggest that d0 magnetic moments and itinerant carriers can interact with each other, which will facilitate the development of SiC spintronic devices with d0 ferromagnetism.
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Submitted 22 May, 2017;
originally announced May 2017.
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Suppressing the cellular breakdown in silicon supersaturated with titanium
Authors:
Fang Liu,
S Prucnal,
R Hübner,
Ye Yuan,
W Skorupa,
M Helm,
Shengqiang Zhou
Abstract:
Hyper do** Si with up to 6 at.% Ti in solid solution was performed by ion implantation followed by pulsed laser annealing and flash lamp annealing. In both cases, the implanted Si layer can be well recrystallized by liquid phase epitaxy and solid phase epitaxy, respectively. Cross-sectional transmission electron microscopy of Ti-implanted Si after liquid phase epitaxy shows the so-called growth…
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Hyper do** Si with up to 6 at.% Ti in solid solution was performed by ion implantation followed by pulsed laser annealing and flash lamp annealing. In both cases, the implanted Si layer can be well recrystallized by liquid phase epitaxy and solid phase epitaxy, respectively. Cross-sectional transmission electron microscopy of Ti-implanted Si after liquid phase epitaxy shows the so-called growth interface breakdown or cellular breakdown owing to the occurrence of constitutional supercooling in the melt. The appearance of cellular breakdown prevents further recrystallization. However, the out-diffusion and cellular breakdown can be effectively suppressed by solid phase epitaxy during flash lamp annealing due to the high velocity of amorphous-crystalline interface and the low diffusion velocity for Ti in the solid phase.
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Submitted 19 August, 2016;
originally announced August 2016.
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Bandgap narrowing in Mn doped GaAs probed by room-temperature photoluminescence
Authors:
S. Prucnal,
K. Gao,
I. Skorupa,
L. Rebohle,
L. Vines,
H. Schmidt,
M. Khalid,
Y. Wang,
E. Weschke,
W. Skorupa,
J. Grenzer,
R. Huebner,
M. Helm,
S. Zhou
Abstract:
The electronic band structure of the (Ga,Mn)As system has been one of the most intriguing problems in solid state physics over the past two decades. Determination of the band structure evolution with increasing Mn concentration is a key issue to understand the origin of ferromagnetism. Here we present room temperature photoluminescence and ellipsometry measurements of Ga_{100%-x}Mn_{x}As alloy. Th…
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The electronic band structure of the (Ga,Mn)As system has been one of the most intriguing problems in solid state physics over the past two decades. Determination of the band structure evolution with increasing Mn concentration is a key issue to understand the origin of ferromagnetism. Here we present room temperature photoluminescence and ellipsometry measurements of Ga_{100%-x}Mn_{x}As alloy. The up-shift of the valence-band is proven by the red shift of the room temperature near band gap emission from the Ga_{100%-x}Mn_{x}As alloy with increasing Mn content. It is shown that even a do** by 0.02 at.% of Mn affects the valence-band edge and it merges with the impurity band for a Mn concentration as low as 0.6 at.%. Both X-ray diffraction pattern and high resolution cross-sectional TEM images confirmed full recrystallization of the implanted layer and GaMnAs alloy formation.
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Submitted 30 October, 2015;
originally announced October 2015.
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High Curie temperature and perpendicular magnetic anisotropy in homoepitaxial InMnAs films
Authors:
Y. Yuan,
Y. Wang,
K. Gao,
M. Khalid,
C. Wu,
W. Zhang,
F. Munnik,
E. Weschke,
C. Baehtz,
W. Skorupa,
M. Helm,
S. Zhou
Abstract:
We have prepared the dilute magnetic semiconductor (DMS) InMnAs with different Mn concentrations by ion implantation and pulsed laser melting. The Curie temperature of the In1-xMnxAs epilayer depends on the Mn concentration x, reaching 82 K for x=0.105. The substitution of Mn ions at the Indium sites induces a compressive strain perpendicular to the InMnAs layer and a tensile strain along the in-p…
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We have prepared the dilute magnetic semiconductor (DMS) InMnAs with different Mn concentrations by ion implantation and pulsed laser melting. The Curie temperature of the In1-xMnxAs epilayer depends on the Mn concentration x, reaching 82 K for x=0.105. The substitution of Mn ions at the Indium sites induces a compressive strain perpendicular to the InMnAs layer and a tensile strain along the in-plane direction. This gives rise to a large perpendicular magnetic anisotropy, which is often needed for the demonstration of electrical control of magnetization and for spin-transfer-torque induced magnetization reversal.
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Submitted 4 June, 2015;
originally announced June 2015.
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Hyperdo** silicon with selenium: solid vs. liquid phase epitaxy
Authors:
S. Zhou,
F. Liu,
S. Prucnal,
K. Gao,
M. Khalid,
C. Baehtz,
M. Posselt,
W. Skorupa,
M. Helm
Abstract:
Chalcogen-hyperdoped silicon shows potential applications in silicon-based infrared photodetectors and intermediate band solar cells. Due to the low solid solubility limits of chalcogen elements in silicon, these materials were previously realized by femtosecond or nanosecond laser annealing of implanted silicon or bare silicon in certain background gases. The high energy density deposited on the…
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Chalcogen-hyperdoped silicon shows potential applications in silicon-based infrared photodetectors and intermediate band solar cells. Due to the low solid solubility limits of chalcogen elements in silicon, these materials were previously realized by femtosecond or nanosecond laser annealing of implanted silicon or bare silicon in certain background gases. The high energy density deposited on the silicon surface leads to a liquid phase and the fast recrystallization velocity allows trap** of chalcogen into the silicon matrix. However, this method encounters the problem of surface segregation. In this paper, we propose a solid phase processing by flash-lamp annealing in the millisecond range, which is in between the conventional rapid thermal annealing and pulsed laser annealing. Flash lamp annealed selenium-implanted silicon shows a substitutional fraction of around 70% with an implanted concentration up to 2.3%. The resistivity is lower and the carrier mobility is higher than those of nanosecond pulsed laser annealed samples. Our results show that flash-lamp annealing is superior to laser annealing in preventing surface segregation and in allowing scalability.
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Submitted 16 January, 2015;
originally announced January 2015.
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A comprehensive study of the magnetic, structural and transport properties of the III-V ferromagnetic semiconductor InMnP
Authors:
M. Khalid,
Kun Gao,
E. Weschke,
R. Huebner,
C. Baehtz,
O. Gordan,
G. Salvan,
D. R. T. Zahn,
W. Skorupa,
M. Helm,
Shengqiang Zhou
Abstract:
The manganese induced magnetic, electrical and structural modification in InMnP epilayers, prepared by Mn ion implantation and pulsed laser annealing, are investigated in the following work. All samples exhibit clear hysteresis loops and strong spin polarization at the Fermi level. The degree of magnetization, the Curie temperature and the spin polarization depend on the Mn concentration. The brig…
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The manganese induced magnetic, electrical and structural modification in InMnP epilayers, prepared by Mn ion implantation and pulsed laser annealing, are investigated in the following work. All samples exhibit clear hysteresis loops and strong spin polarization at the Fermi level. The degree of magnetization, the Curie temperature and the spin polarization depend on the Mn concentration. The bright-field transmission electron micrographs show that InP samples become almost amorphous after Mn implantation but recrystallize after pulsed laser annealing. We did not observe an insulator-metal transition in InMnP up to a Mn concentration of 5 at./%. Instead all InMnP samples show insulating characteristics up to the lowest measured temperature. Magneotresistance results obtained at low temperatures support the hop** conduction mechanism in InMnP. We find that the Mn impurity band remains detached from the valence band in InMnP up to 5 at./% Mn do**. Our findings indicate that the local environment of Mn ions in InP is similar to GaMnAs, GaMnP and InMnAs, however, the electrical properties of these Mn implanted III-V compounds are different. This is one of the consequences of the different Mn binding energy in these compounds.
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Submitted 15 January, 2015;
originally announced January 2015.
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Ferromagnetism and impurity band in a new magnetic semiconductor: InMnP
Authors:
M. Khalid,
E. Weschke,
W. Skorupa,
M. Helm,
S. Zhou
Abstract:
We have synthesized ferromagnetic InMnP, a member of III-Mn-V ferromagnetic semiconductor family, by Mn ion implantation and pulsed laser annealing. Clear ferromagnetic hysteresis loops and a perpendicular magnetic anisotropy are observed up to a Curie temperature of 42 K. Large values of negative magnetoresistance and magnetic circular dichroism as well as anomalous Hall effect are further eviden…
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We have synthesized ferromagnetic InMnP, a member of III-Mn-V ferromagnetic semiconductor family, by Mn ion implantation and pulsed laser annealing. Clear ferromagnetic hysteresis loops and a perpendicular magnetic anisotropy are observed up to a Curie temperature of 42 K. Large values of negative magnetoresistance and magnetic circular dichroism as well as anomalous Hall effect are further evidences of a ferromagnetic order in InMnP. An effort is made to understand the transport mechanism in InMnP using the theoretical models. We find that the valence band of InP does not merge with the impurity band of the heavily doped ferromagnetic InMnP. Our results suggest that impurity band conduction is a characteristic of Mn-doped III-V semiconductors which have deep Mn-acceptor levels.
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Submitted 8 April, 2014;
originally announced April 2014.
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Disentangling defect-induced ferromagnetism in SiC
Authors:
Yutian Wang,
Lin Li,
Slawomir Prucnal,
Xuliang Chen,
Wei Tong,
Zhaorong Yang,
Frans Munnik,
Kay Potzger,
Wolfgang Skorupa,
Sibylle Gemming,
Manfred Helm,
Shengqiang Zhou
Abstract:
We present a detailed investigation of the magnetic properties in SiC single crystals bombarded with neon ions. Through careful measuring of the magnetization of virgin and irradiated SiC, we decompose the magnetization of SiC into paramagnetic, superparamagnetic, and ferromagnetic contributions. The ferromagnetic contribution persists well above room temperature and exhibits a pronounced magnetic…
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We present a detailed investigation of the magnetic properties in SiC single crystals bombarded with neon ions. Through careful measuring of the magnetization of virgin and irradiated SiC, we decompose the magnetization of SiC into paramagnetic, superparamagnetic, and ferromagnetic contributions. The ferromagnetic contribution persists well above room temperature and exhibits a pronounced magnetic anisotropy. We qualitatively explain the magnetic properties as a result of the intrinsic clustering tendency of defects.
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Submitted 22 January, 2014;
originally announced January 2014.
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Structural and magnetic properties of irradiated SiC
Authors:
Yutian Wang,
Xuliang Chen,
Lin Li,
Artem Shalimov,
Wei Tong,
Slawomir Prucnal,
Frans Munnik,
Zhaorong Yang,
Wolfgang Skorupa,
Manfred Helm,
Shengqiang Zhou
Abstract:
We present a comprehensive structural characterization of ferromagnetic SiC single crystals induced by Ne ion irradiation. The ferromagnetism has been confirmed by electron spin resonance and possible transition metal impurities can be excluded to be the origin of the observed ferromagnetism. Using X-ray diffraction and Rutherford backscattering/channeling spectroscopy, we estimate the damage to t…
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We present a comprehensive structural characterization of ferromagnetic SiC single crystals induced by Ne ion irradiation. The ferromagnetism has been confirmed by electron spin resonance and possible transition metal impurities can be excluded to be the origin of the observed ferromagnetism. Using X-ray diffraction and Rutherford backscattering/channeling spectroscopy, we estimate the damage to the crystallinity of SiC which mutually influences the ferromagnetism in SiC.
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Submitted 15 January, 2014;
originally announced January 2014.
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Origin and enhancement of the 1.3 um luminescence from GaAs treated by ion-implantation and flash lamp annealing
Authors:
Kun Gao,
S. Prucnal,
W. Skorupa,
M. Helm,
Shengqiang Zhou
Abstract:
GaAs and GaAs based materials have outstanding optoelectronic properties and are widely used as light emitting media in devices. Many approaches have been applied to GaAs to generate luminescence at 0.88, 1.30, 1.55 um which are transmission windows of optical fibers. In this paper we present the photoluminescence at 1.30 um from deep level defects in GaAs treated by ion-implantation and flash lam…
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GaAs and GaAs based materials have outstanding optoelectronic properties and are widely used as light emitting media in devices. Many approaches have been applied to GaAs to generate luminescence at 0.88, 1.30, 1.55 um which are transmission windows of optical fibers. In this paper we present the photoluminescence at 1.30 um from deep level defects in GaAs treated by ion-implantation and flash lamp annealing (FLA). Such emission, which exhibits superior temperature stability, can be obtained from FLA treated virgin GaAs as well as doped GaAs. Indium-do** in GaAs can greatly enhance the luminescence. By photoluminescence, Raman measurements, and positron annihilation spectroscopy, we conclude that the origin of the 1.30 um emission is from transitions between the VAs-donor and X-acceptor pairs.
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Submitted 15 January, 2014;
originally announced January 2014.
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Using x-ray diffraction to identify precipitates in transition metal doped semiconductors
Authors:
Shengqiang Zhou,
K. Potzger,
G. Talut,
J. von Borany,
W. Skorupa,
M. Helm,
J. Fassbender
Abstract:
In the past decade, room temperature ferromagnetism was often observed in transition metal doped semiconductors, which were claimed as diluted magnetic semiconductors (DMS). Nowadays intensive activities are devoted to clarify wether the observed ferromagnetism stems from carrier mediated magnetic impurities, ferromagnetic precipitates, or spinodal decomposition. In this paper, we have correlated…
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In the past decade, room temperature ferromagnetism was often observed in transition metal doped semiconductors, which were claimed as diluted magnetic semiconductors (DMS). Nowadays intensive activities are devoted to clarify wether the observed ferromagnetism stems from carrier mediated magnetic impurities, ferromagnetic precipitates, or spinodal decomposition. In this paper, we have correlated the structural and magnetic properties of transition metal doped ZnO, TiO2, and Si, prepared by ion implantation. Crystalline precipitates, i.e., transition metal (Co, Ni) and Mn-silicide nanocrystals, are responsible for the magnetism. Additionally due to their orientation nature with respect to the host, these nanocrystals in some cases are not detectable by conventional x-ray diffraction (XRD). This nature results in the pitfall of using XRD to exclude magnetic precipitates in DMS materials.
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Submitted 1 January, 2013;
originally announced January 2013.
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InP nanocrystals on silicon for optoelectronic applications
Authors:
Slawomir Prucnal,
Shengqiang Zhou,
Xin Ou,
Helfried Reuther,
Maciej Oskar Liedke,
Arndt Mücklich,
Manfred Helm,
Jerzy Zuk,
Marcin Turek,
Krzysztof Pyszniak,
Wolfgang Skorupa
Abstract:
One of the solutions enabling performance progress, which can overcome the downsizing limit in silicon technology, is the integration of different functional optoelectronic devices within a single chip. Silicon with its indirect band gap has poor optical properties, which is its main drawback. Therefore, a different material has to be used for the on-chip optical interconnections, e.g. a direct ba…
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One of the solutions enabling performance progress, which can overcome the downsizing limit in silicon technology, is the integration of different functional optoelectronic devices within a single chip. Silicon with its indirect band gap has poor optical properties, which is its main drawback. Therefore, a different material has to be used for the on-chip optical interconnections, e.g. a direct band gap III-V compound semiconductor material. In the paper we present the synthesis of single crystalline InP nanodots (NDs) on silicon using combined ion implantation and millisecond flash lamp annealing techniques. The optical and microstructural investigations reveal the growth of high-quality (100)-oriented InP nanocrystals. The current-voltage measurements confirm the formation of an n-p heterojunction between the InP NDs and silicon. The main advantage of our method is its integration with large-scale silicon technology, which allows applying it for Si-based optoelectronic devices.
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Submitted 11 November, 2012;
originally announced November 2012.
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Temperature stable 1.3 μm emission from GaAs
Authors:
Slawomir Prucnal,
Kun Gao,
Wolfgang Anwand,
Manfred Helm,
Wolfgang Skorupa,
Shengqiang Zhou
Abstract:
Gallium arsenide has outstanding performance in optical communication devices for light source purposes. Different approaches have been done to realize the luminescence from GaAs matching the transmission window of optical fibers. Here we present the realization of quasi- temperature independent photoluminescence at around 1.3 μm from millisecond-range thermally treated GaAs. It is shown that the…
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Gallium arsenide has outstanding performance in optical communication devices for light source purposes. Different approaches have been done to realize the luminescence from GaAs matching the transmission window of optical fibers. Here we present the realization of quasi- temperature independent photoluminescence at around 1.3 μm from millisecond-range thermally treated GaAs. It is shown that the VAs donor and X acceptor pairs are responsible for the 1.3 μm emission. The influence of the flash-lamp-annealing on the donor-acceptor pair (DAP) formation in the nitrogen and manganese doped and un-doped semi-insulating GaAs wafers were investigated. The concentration of DAP and the 1.3 μm emission can be easily tuned by controlling do** and annealing conditions.
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Submitted 8 November, 2012;
originally announced November 2012.
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The importance of hole concentration in establishing carrier-mediated ferromagnetism in Mn doped Ge
Authors:
Shengqiang Zhou,
Danilo Bürger,
Wolfgang Skorupa,
Peter Oesterlin,
Manfred Helm,
Heidemarie Schmidt
Abstract:
In the present work, we have prepared Mn-doped Ge using different annealing approaches after Mn ion implantation, and obtained samples with hole concentrations ranging from 10^18 to 2.1x10^20 cm^-3, the latter being the highest reported so far. Based on the magnetotransport properties of Mn doped Ge, we argue that the hole concentration is a decisive parameter in establishing carrier-mediated ferr…
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In the present work, we have prepared Mn-doped Ge using different annealing approaches after Mn ion implantation, and obtained samples with hole concentrations ranging from 10^18 to 2.1x10^20 cm^-3, the latter being the highest reported so far. Based on the magnetotransport properties of Mn doped Ge, we argue that the hole concentration is a decisive parameter in establishing carrier-mediated ferromagnetism in magnetic Ge.
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Submitted 24 May, 2010;
originally announced May 2010.
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Hysteresis in the magneto-transport of Manganese-doped Germanium: evidence for carrier-mediated ferromagnetism
Authors:
Shengqiang Zhou,
Danilo Buerger,
Arndt Muecklich,
Christine Baumgart,
Wolfgang Skorupa,
Carsten Timm,
Peter Oesterlin,
Manfred Helm,
Heidemarie Schmidt
Abstract:
We report the fabrication of Ge:Mn ferromagnetic semiconductors by Mn-ion implantation into Ge followed by pulsed laser annealing. Benefiting from the short time annealing, the hole concentration in Mn-implanted Ge has been increased by two orders of magnitude from 10$^{18}$ to over 10$^{20}$ cm$^{-3}$. Likely due to the high hole concentration, we observe that the longitudinal and Hall resistance…
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We report the fabrication of Ge:Mn ferromagnetic semiconductors by Mn-ion implantation into Ge followed by pulsed laser annealing. Benefiting from the short time annealing, the hole concentration in Mn-implanted Ge has been increased by two orders of magnitude from 10$^{18}$ to over 10$^{20}$ cm$^{-3}$. Likely due to the high hole concentration, we observe that the longitudinal and Hall resistances exhibit the same hysteresis as the magnetization, which is usually considered as a sign of carrier-mediated ferromagnetism.
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Submitted 5 April, 2010;
originally announced April 2010.
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Crystallographically oriented Co and Ni nanocrystals inside ZnO formed by ion implantation and postannealing
Authors:
Shengqiang Zhou,
K. Potzger,
J. von Borany,
R. Groetzschel,
W. Skorupa,
M. Helm,
J. Fassbender
Abstract:
In the last decade, transition-metal-doped ZnO has been intensively investigated as a route to room-temperature diluted magnetic semiconductors (DMSs). However, the origin for the reported ferromagnetism in ZnO-based DMS remains questionable. Possible options are diluted magnetic semiconductors, spinodal decomposition, or secondary phases. In order to clarify this question, we have performed a t…
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In the last decade, transition-metal-doped ZnO has been intensively investigated as a route to room-temperature diluted magnetic semiconductors (DMSs). However, the origin for the reported ferromagnetism in ZnO-based DMS remains questionable. Possible options are diluted magnetic semiconductors, spinodal decomposition, or secondary phases. In order to clarify this question, we have performed a thorough characterization of the structural and magnetic properties of Co- and Ni-implanted ZnO single crystals. Our measurements reveal that Co or Ni nanocrystals (NCs) are the major contribution of the measured ferromagnetism. Already in the as-implanted samples, Co or Ni NCs have formed and they exhibit superparamagnetic properties. The Co or Ni NCs are crystallographically oriented with respect to the ZnO matrix. Their magnetic properties, e.g., the anisotropy and the superparamagnetic blocking temperature, can be tuned by annealing. We discuss the magnetic anisotropy of Ni NCs embedded in ZnO concerning the strain anisotropy.
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Submitted 4 August, 2009;
originally announced August 2009.
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Fe-implanted ZnO: Magnetic precipitates versus dilution
Authors:
Shengqiang Zhou,
K. Potzger,
G. Talut,
H. Reuther,
J. von Borany,
R. Groetzschel,
W. Skorupa,
M. Helm,
J. Fassbender,
N. Volbers,
M. Lorenz,
T. Herrmannsdoerfer
Abstract:
Nowadays ferromagnetism is often found in potential diluted magnetic semiconductor systems. However, many authors argue that the observed ferromagnetism stems from ferromagnetic precipitates or spinodal decomposition rather than from carrier mediated magnetic impurities, as required for a diluted magnetic semiconductor. In the present paper we answer this question for Fe-implanted ZnO single cry…
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Nowadays ferromagnetism is often found in potential diluted magnetic semiconductor systems. However, many authors argue that the observed ferromagnetism stems from ferromagnetic precipitates or spinodal decomposition rather than from carrier mediated magnetic impurities, as required for a diluted magnetic semiconductor. In the present paper we answer this question for Fe-implanted ZnO single crystals comprehensively. Different implantation fluences and temperatures and post-implantation annealing temperatures have been chosen in order to evaluate the structural and magnetic properties over a wide range of parameters. Three different regimes with respect to the Fe concentration and the process temperature are found: 1) Disperse Fe$^{2+}$ and Fe$^{3+}$ at low Fe concentrations and low processing temperatures, 2) FeZn$_2$O$_4$ at very high processing temperatures and 3) an intermediate regime with a co-existence of metallic Fe (Fe$^0$) and ionic Fe (Fe$^{2+}$ and Fe$^{3+}$). Ferromagnetism is only observed in the latter two cases, where inverted ZnFe$_2$O$_4$ and $α$-Fe nanocrystals are the origin of the observed ferromagnetic behavior, respectively. The ionic Fe in the last case could contribute to a carrier mediated coupling. However, their separation is too large to couple ferromagnetically due to the lack of p-type carrier. For comparison investigations of Fe-implanted epitaxial ZnO thin films are presented.
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Submitted 4 August, 2009;
originally announced August 2009.
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Ferromagnetic transition metal implanted ZnO: a diluted magnetic semiconductor?
Authors:
Shengqiang Zhou,
K. Potzger,
Qingyu Xu,
G. Talut,
M. Lorenz,
W. Skorupa,
M. Helm,
J. Fassbender,
M. Grundmann,
H. Schmidt
Abstract:
Recently theoretical works predict that some semiconductors (e.g. ZnO) doped with magnetic ions are diluted magnetic semiconductors (DMS). In DMS magnetic ions substitute cation sites of the host semiconductor and are coupled by free carriers resulting in ferromagnetism. One of the main obstacles in creating DMS materials is the formation of secondary phases because of the solid-solubility limit…
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Recently theoretical works predict that some semiconductors (e.g. ZnO) doped with magnetic ions are diluted magnetic semiconductors (DMS). In DMS magnetic ions substitute cation sites of the host semiconductor and are coupled by free carriers resulting in ferromagnetism. One of the main obstacles in creating DMS materials is the formation of secondary phases because of the solid-solubility limit of magnetic ions in semiconductor host. In our study transition metal ions were implanted into ZnO single crystals with the peak concentrations of 0.5-10 at.%. We established a correlation between structural and magnetic properties. By synchrotron radiation X-ray diffraction (XRD) secondary phases (Fe, Ni, Co and ferrite nanocrystals) were observed and have been identified as the source for ferromagnetism. Due to their different crystallographic orientation with respect to the host crystal these nanocrystals in some cases are very difficult to be detected by a simple Bragg-Brentano scan. This results in the pitfall of using XRD to exclude secondary phase formation in DMS materials. For comparison, the solubility of Co diluted in ZnO films ranges between 10 and 40 at.% using different growth conditions pulsed laser deposition. Such diluted, Co-doped ZnO films show paramagnetic behaviour. However, only the magnetoresistance of Co-doped ZnO films reveals possible s-d exchange interaction as compared to Co-implanted ZnO single crystals.
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Submitted 21 July, 2009;
originally announced July 2009.
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Structural and magnetic properties of Mn-implanted Si
Authors:
Shengqiang Zhou,
K. Potzger,
Gufei Zhang,
A. Muecklich,
F. Eichhorn,
N. Schell,
R. Groetzschel,
B. Schmidt,
W. Skorupa,
M. Helm,
J. Fassbender,
D. Geiger
Abstract:
Structural and ferromagnetic properties in Mn implanted, p-type Si were investigated. High resolution structural analysis techniques like synchrotron X-ray diffraction revealed the formation of MnSi1.7 nanoparticles already in the as implanted samples. Depending on the Mn-fluence, the size increases from 5 nm to 20 nm upon rapid thermal annealing. No significant evidence is found for Mn substitu…
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Structural and ferromagnetic properties in Mn implanted, p-type Si were investigated. High resolution structural analysis techniques like synchrotron X-ray diffraction revealed the formation of MnSi1.7 nanoparticles already in the as implanted samples. Depending on the Mn-fluence, the size increases from 5 nm to 20 nm upon rapid thermal annealing. No significant evidence is found for Mn substituting Si sites either in the as-implanted or annealed samples. The observed ferromagnetism yields a saturation moment of 0.21 mu_B per implanted Mn at 10 K, which could be assigned to MnSi1.7 nanoparticles as revealed by a temperature dependent magnetization measurement.
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Submitted 24 December, 2006;
originally announced December 2006.
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Crystallographically oriented magnetic ZnFe2O4 nanoparticles synthesized by Fe implantation into ZnO
Authors:
Shengqiang Zhou,
K. Potzger,
H. Reuther,
G. Talut,
F. Eichhorn,
J. von Borany,
W. Skorupa,
M. Helm,
J. Fassbender
Abstract:
In this paper, a correlation between structural and magnetic properties of Fe implanted ZnO is presented. High fluence Fe^+ implantation into ZnO leads to the formation of superparamagnetic alpha-Fe nanoparticles. High vacuum annealing at 823 K results in the growth of alpha-Fe particles, but the annealing at 1073 K oxidized the majority of the Fe nanoparticles. After a long term annealing at 10…
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In this paper, a correlation between structural and magnetic properties of Fe implanted ZnO is presented. High fluence Fe^+ implantation into ZnO leads to the formation of superparamagnetic alpha-Fe nanoparticles. High vacuum annealing at 823 K results in the growth of alpha-Fe particles, but the annealing at 1073 K oxidized the majority of the Fe nanoparticles. After a long term annealing at 1073 K, crystallographically oriented ZnFe2O4 nanoparticles were formed inside ZnO with the orientation relationship of ZnFe2O4(111)[110]//ZnO(0001)[1120]. These ZnFe2O4 nanoparticles show a hysteretic behavior upon magnetization reversal at 5 K.
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Submitted 18 December, 2006;
originally announced December 2006.
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Absence of ferromagnetism in V-implanted ZnO single crystals
Authors:
Shengqiang Zhou,
K. Potzger,
H. Reuther,
K. Kuepper,
W. Skorupa,
M. Helm,
J. Fassbender
Abstract:
The structural and magnetic properties of V doped ZnO are presented. V ions were introduced into hydrothermal ZnO single crystals by ion implantation with fluences of 1.2*10^16 to 6*10^16 cm^-2. Post-implantation annealing was performed in high vacuum from 823 K to 1023 K. The ZnO host material still partly remains in a crystalline state after irradiation, and is partly recovered by annealing. T…
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The structural and magnetic properties of V doped ZnO are presented. V ions were introduced into hydrothermal ZnO single crystals by ion implantation with fluences of 1.2*10^16 to 6*10^16 cm^-2. Post-implantation annealing was performed in high vacuum from 823 K to 1023 K. The ZnO host material still partly remains in a crystalline state after irradiation, and is partly recovered by annealing. The V ions show a thermal mobility as revealed by depth profile Auger electron spectroscopy. Synchrotron radiation x-ray diffraction revealed no secondary phase formation which indicates the substitution of V onto Zn site. However in all samples no pronounced ferromagnetism was observed down to 5 K by a superconducting quantum interference device magnetometer.
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Submitted 14 December, 2006;
originally announced December 2006.
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Crystalline Ni nanoparticles as the origin of ferromagnetism in Ni implanted ZnO crystals
Authors:
Shengqiang Zhou,
K. Potzger,
Gufei Zhang,
F. Eichhorn,
W. Skorupa,
M. Helm,
J. Fassbender
Abstract:
We report the structural and magnetic properties of ZnO single crystals implanted at 623 K with up to 10 at. % of Ni. As revealed by X-ray diffraction, crystalline fcc-Ni nanoparticles were formed inside ZnO. The magnetic behavior (magnetization with field reversal and with different temperature protocol) of all samples is well explained by a magnetic Ni-nanoparticle system. Although the formati…
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We report the structural and magnetic properties of ZnO single crystals implanted at 623 K with up to 10 at. % of Ni. As revealed by X-ray diffraction, crystalline fcc-Ni nanoparticles were formed inside ZnO. The magnetic behavior (magnetization with field reversal and with different temperature protocol) of all samples is well explained by a magnetic Ni-nanoparticle system. Although the formation of Ni:ZnO based diluted magnetic semiconductor cannot be ruled out, the major contribution to the magnetic properties stems from crystalline nanoparticles synthesized under these implantation conditions.
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Submitted 30 November, 2006;
originally announced November 2006.
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Fe implanted ferromagnetic ZnO
Authors:
K. Potzger,
Shengqiang Zhou,
H. Reuther,
A. Muecklich,
F. Eichhorn,
N. Schell,
W. Skorupa,
M. Helm,
J. Fassbender,
T. Herrmannsdoerfer,
T. P. Papageorgiou
Abstract:
Room-temperature ferromagnetism has been induced within ZnO single crystals by implant-do** with Fe ions. For an implantation temperature of 620 K and an ion fluence of 4x10^16 cm^-2, very tiny Fe particles, formed inside the host matrix, are responsible for the ferromagnetic properties. They were identified using synchrotron X-ray diffraction and Moessbauer spectroscopy. On the other hand, Fe…
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Room-temperature ferromagnetism has been induced within ZnO single crystals by implant-do** with Fe ions. For an implantation temperature of 620 K and an ion fluence of 4x10^16 cm^-2, very tiny Fe particles, formed inside the host matrix, are responsible for the ferromagnetic properties. They were identified using synchrotron X-ray diffraction and Moessbauer spectroscopy. On the other hand, Fe ions implanted at a temperature of 253 K and an ion fluence of 4x10^15 cm^-2 are incorporated into the host matrix and develop a room temperature diluted magnetic semiconductor (DMS).
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Submitted 13 December, 2005;
originally announced December 2005.
