Bandgap narrowing in Mn doped GaAs probed by room-temperature photoluminescence
Authors:
S. Prucnal,
K. Gao,
I. Skorupa,
L. Rebohle,
L. Vines,
H. Schmidt,
M. Khalid,
Y. Wang,
E. Weschke,
W. Skorupa,
J. Grenzer,
R. Huebner,
M. Helm,
S. Zhou
Abstract:
The electronic band structure of the (Ga,Mn)As system has been one of the most intriguing problems in solid state physics over the past two decades. Determination of the band structure evolution with increasing Mn concentration is a key issue to understand the origin of ferromagnetism. Here we present room temperature photoluminescence and ellipsometry measurements of Ga_{100%-x}Mn_{x}As alloy. Th…
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The electronic band structure of the (Ga,Mn)As system has been one of the most intriguing problems in solid state physics over the past two decades. Determination of the band structure evolution with increasing Mn concentration is a key issue to understand the origin of ferromagnetism. Here we present room temperature photoluminescence and ellipsometry measurements of Ga_{100%-x}Mn_{x}As alloy. The up-shift of the valence-band is proven by the red shift of the room temperature near band gap emission from the Ga_{100%-x}Mn_{x}As alloy with increasing Mn content. It is shown that even a do** by 0.02 at.% of Mn affects the valence-band edge and it merges with the impurity band for a Mn concentration as low as 0.6 at.%. Both X-ray diffraction pattern and high resolution cross-sectional TEM images confirmed full recrystallization of the implanted layer and GaMnAs alloy formation.
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Submitted 30 October, 2015;
originally announced October 2015.
Decisive role of oxygen vacancy in ferroelectric vs. ferromagnetic Mn-doped BaTiO3 thin films
Authors:
Yao Shuai,
Shengqiang Zhou,
Danilo Bürger,
Helfried Reuther,
Ilona Skorupa,
Varun John,
Manfred Helm,
Heidemarie Schmidt
Abstract:
Single-phase perovskite 5 at.% Mn-doped and undoped polycrystalline BaTiO3 thin films have been grown under different oxygen partial pressures by pulsed laser deposition on platinum-coated sapphire substrates. Ferroelectricity is only observed for the Mn-doped and undoped BaTiO3 thin films grown under relatively high oxygen partial pressure. Compared to undoped BaTiO3, Mn-doped BaTiO3 reveals a lo…
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Single-phase perovskite 5 at.% Mn-doped and undoped polycrystalline BaTiO3 thin films have been grown under different oxygen partial pressures by pulsed laser deposition on platinum-coated sapphire substrates. Ferroelectricity is only observed for the Mn-doped and undoped BaTiO3 thin films grown under relatively high oxygen partial pressure. Compared to undoped BaTiO3, Mn-doped BaTiO3 reveals a low leakage current, increased dielectric loss, and a decreased dielectric constant. Ferromagnetism is seen on Mn-doped BaTiO3 thin films prepared under low oxygen partial pressure and is attributed to the formation of bound magnetic polarons (BMPs). This BMP formation is enhanced by oxygen vacancies. The present work confirms a theoretical work from C. Ederer and N. Spaldin on ferroelectric perovskites [Nature Mat. 3, 849 (2004)] which shows that the existence of ferroelectricity is incompatible with the existence of a spontaneous magnetization in Mn-doped BaTiO3 thin films.
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Submitted 27 April, 2011;
originally announced April 2011.
