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Hybrid kernel polynomial method
Authors:
Muhammad Irfan,
Sathish R. Kuppuswamy,
Daniel Varjas,
Pablo M. Perez-Piskunow,
Rafal Skolasinski,
Michael Wimmer,
Anton R. Akhmerov
Abstract:
The kernel polynomial method allows to sample overall spectral properties of a quantum system, while sparse diagonalization provides accurate information about a few important states. We present a method combining these two approaches without loss of performance or accuracy. We apply this hybrid kernel polynomial method to improve the computation of thermodynamic quantities and the construction of…
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The kernel polynomial method allows to sample overall spectral properties of a quantum system, while sparse diagonalization provides accurate information about a few important states. We present a method combining these two approaches without loss of performance or accuracy. We apply this hybrid kernel polynomial method to improve the computation of thermodynamic quantities and the construction of perturbative effective models, in a regime where neither of the methods is sufficient on its own. To achieve this we develop a perturbative kernel polynomial method to compute arbitrary order series expansions of expectation values. We demonstrate the efficiency of our approach on three examples: the calculation of supercurrent and inductance in a Josephson junction, the interaction of spin qubits defined in a two dimensional electron gas, and the calculation of the effective band structure in a realistic model of a semiconductor nanowire.
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Submitted 2 December, 2019; v1 submitted 20 September, 2019;
originally announced September 2019.
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Spin-orbit interaction and induced superconductivity in an one-dimensional hole gas
Authors:
F. K. de Vries,
J. Shen,
R. J. Skolasinski,
M. P. Nowak,
D. Varjas,
L. Wang,
M. Wimmer,
J. Ridderbos,
F. A. Zwanenburg,
A. Li,
S. Koelling,
M. A. Verheijen,
E. P. A. M. Bakkers,
L. P. Kouwenhoven
Abstract:
Low dimensional semiconducting structures with strong spin-orbit interaction (SOI) and induced superconductivity attracted much interest in the search for topological superconductors. Both the strong SOI and hard superconducting gap are directly related to the topological protection of the predicted Majorana bound states. Here we explore the one-dimensional hole gas in germanium silicon (Ge-Si) co…
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Low dimensional semiconducting structures with strong spin-orbit interaction (SOI) and induced superconductivity attracted much interest in the search for topological superconductors. Both the strong SOI and hard superconducting gap are directly related to the topological protection of the predicted Majorana bound states. Here we explore the one-dimensional hole gas in germanium silicon (Ge-Si) core-shell nanowires (NWs) as a new material candidate for creating a topological superconductor. Fitting multiple Andreev reflection measurements shows that the NW has two transport channels only, underlining its one-dimensionality. Furthermore, we find anisotropy of the Lande g-factor, that, combined with band structure calculations, provides us qualitative evidence for direct Rashba SOI and a strong orbital effect of the magnetic field. Finally, a hard superconducting gap is found in the tunneling regime, and the open regime, where we use the Kondo peak as a new tool to gauge the quality of the superconducting gap.
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Submitted 21 July, 2018; v1 submitted 5 June, 2018;
originally announced June 2018.
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Robust Helical Edge Transport in Quantum Spin Hall Quantum Wells
Authors:
Rafal Skolasinski,
Dmitry I. Pikulin,
Jason Alicea,
Michael Wimmer
Abstract:
We show that burying of the Dirac point in semiconductor-based quantum-spin-Hall systems can generate unexpected robustness of edge states to magnetic fields. A detailed ${\bf k\cdot p}$ band-structure analysis reveals that InAs/GaSb and HgTe/CdTe quantum wells exhibit such buried Dirac points. By simulating transport in a disordered system described within an effective model, we further demonstra…
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We show that burying of the Dirac point in semiconductor-based quantum-spin-Hall systems can generate unexpected robustness of edge states to magnetic fields. A detailed ${\bf k\cdot p}$ band-structure analysis reveals that InAs/GaSb and HgTe/CdTe quantum wells exhibit such buried Dirac points. By simulating transport in a disordered system described within an effective model, we further demonstrate that buried Dirac points yield nearly quantized edge conduction out to large magnetic fields, consistent with recent experiments.
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Submitted 14 September, 2017;
originally announced September 2017.
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Spin-orbit interaction in a dual gated InAs/GaSb quantum well
Authors:
Arjan J. A. Beukman,
Folkert K. de Vries,
Jasper van Veen,
Rafal Skolasinski,
Michael Wimmer,
Fanming Qu,
David T. de Vries,
Binh-Minh Nguyen,
Wei Yi,
Andrey A. Kiselev,
Marko Sokolich,
Michael J. Manfra,
Fabrizio Nichele,
Charles M. Marcus,
Leo P. Kouwenhoven
Abstract:
Spin-orbit interaction is investigated in a dual gated InAs/GaSb quantum well. Using an electric field the quantum well can be tuned between a single carrier regime with exclusively electrons as carriers and a two-carriers regime where electrons and holes coexist. Spin-orbit interaction in both regimes manifests itself as a beating in the Shubnikov-de Haas oscillations. In the single carrier regim…
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Spin-orbit interaction is investigated in a dual gated InAs/GaSb quantum well. Using an electric field the quantum well can be tuned between a single carrier regime with exclusively electrons as carriers and a two-carriers regime where electrons and holes coexist. Spin-orbit interaction in both regimes manifests itself as a beating in the Shubnikov-de Haas oscillations. In the single carrier regime the linear Dresselhaus strength is characterized by $β=$ 28.5 meV$Å$ and the Rashba coefficient $α$ is tuned from 75 to 53 meV$Å$ by changing the electric field. In the two-carriers regime the spin splitting shows a nonmonotonic behavior with gate voltage, which is consistent with our band structure calculations.
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Submitted 11 April, 2017;
originally announced April 2017.
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Orbital contributions to the electron g-factor in semiconductor nanowires
Authors:
Georg W. Winkler,
Dániel Varjas,
Rafal Skolasinski,
Alexey A. Soluyanov,
Matthias Troyer,
Michael Wimmer
Abstract:
Recent experiments on Majorana fermions in semiconductor nanowires [Albrecht et al., Nat. 531, 206 (2016)] revealed a surprisingly large electronic Landé g-factor, several times larger than the bulk value - contrary to the expectation that confinement reduces the g-factor. Here we assess the role of orbital contributions to the electron g-factor in nanowires and quantum dots. We show that an LS co…
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Recent experiments on Majorana fermions in semiconductor nanowires [Albrecht et al., Nat. 531, 206 (2016)] revealed a surprisingly large electronic Landé g-factor, several times larger than the bulk value - contrary to the expectation that confinement reduces the g-factor. Here we assess the role of orbital contributions to the electron g-factor in nanowires and quantum dots. We show that an LS coupling in higher subbands leads to an enhancement of the g-factor of an order of magnitude or more for small effective mass semiconductors. We validate our theoretical finding with simulations of InAs and InSb, showing that the effect persists even if cylindrical symmetry is broken. A huge anisotropy of the enhanced g-factors under magnetic field rotation allows for a straightforward experimental test of this theory.
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Submitted 9 June, 2017; v1 submitted 29 March, 2017;
originally announced March 2017.
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Giant spin-orbit splitting in inverted InAs/GaSb double quantum wells
Authors:
Fabrizio Nichele,
Morten Kjaergaard,
Henri J. Suominen,
Rafal Skolasinski,
Michael Wimmer,
Binh-Minh Nguyen,
Andrey A. Kiselev,
Wei Yi,
Marko Sokolich,
Michael J. Manfra,
Fanming Qu,
Arjan J. A. Beukman,
Leo P. Kouwenhoven,
Charles M. Marcus
Abstract:
Transport measurements in inverted InAs/GaSb quantum wells reveal a giant spin-orbit splitting of the energy bands close to the hybridization gap. The splitting results from the interplay of electron-hole mixing and spin-orbit coupling, and can exceed the hybridization gap. We experimentally investigate the band splitting as a function of top gate voltage for both electron-like and hole-like state…
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Transport measurements in inverted InAs/GaSb quantum wells reveal a giant spin-orbit splitting of the energy bands close to the hybridization gap. The splitting results from the interplay of electron-hole mixing and spin-orbit coupling, and can exceed the hybridization gap. We experimentally investigate the band splitting as a function of top gate voltage for both electron-like and hole-like states. Unlike conventional, noninverted two-dimensional electron gases, the Fermi energy in InAs/GaSb can cross a single spin-resolved band, resulting in full spin-orbit polarization. In the fully polarized regime we observe exotic transport phenomena such as quantum Hall plateaus evolving in $e^2/h$ steps and a non-trivial Berry phase.
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Submitted 24 November, 2016; v1 submitted 4 May, 2016;
originally announced May 2016.
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Inequalities between ground-state energies of Heisenberg models
Authors:
Jacek Wojtkiewicz,
Rafał Skolasiński
Abstract:
The Lieb-Schupp inequality is the inequality between ground state en- ergies of certain antiferromagnetic Heisenberg spin systems. In our paper, the numerical value of energy difference given by Lieb-Schupp inequality has been tested for spin systems in various geometries: chains, ladders and quasi-two-dimensional lattices. It turned out that this energy difference was strongly dependent on the cl…
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The Lieb-Schupp inequality is the inequality between ground state en- ergies of certain antiferromagnetic Heisenberg spin systems. In our paper, the numerical value of energy difference given by Lieb-Schupp inequality has been tested for spin systems in various geometries: chains, ladders and quasi-two-dimensional lattices. It turned out that this energy difference was strongly dependent on the class of the system. The relation between this difference and a fall-off of a correlation function has been empirically found and formulated as a conjecture.
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Submitted 20 October, 2014;
originally announced October 2014.