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GaAs/GaP Superlattice Nanowires for Tailoring Phononic Properties at the Nanoscale: Implications for Thermal Engineering
Authors:
Aswathi K. Sivan,
Begoña Abad,
Tommaso Albrigi,
Omer Arif,
Johannes Trautvetter,
Alicia Ruiz Caridad,
Chaitanya Arya,
Valentina Zannier,
Lucia Sorba,
Riccardo Rurali,
Ilaria Zardo
Abstract:
The possibility to tune the functional properties of nanomaterials is key to their technological applications. Superlattices, i.e., periodic repetitions of two or more materials in different dimensions are being explored for their potential as materials with tailor-made properties. Meanwhile, nanowires offer a myriad of possibilities to engineer systems at the nanoscale, as well as to combine mate…
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The possibility to tune the functional properties of nanomaterials is key to their technological applications. Superlattices, i.e., periodic repetitions of two or more materials in different dimensions are being explored for their potential as materials with tailor-made properties. Meanwhile, nanowires offer a myriad of possibilities to engineer systems at the nanoscale, as well as to combine materials which cannot be put together in conventional heterostructures due to the lattice mismatch. In this work, we investigate GaAs/GaP superlattices embedded in GaP nanowires and demonstrate the tunability of their phononic and optoelectronic properties by inelastic light scattering experiments corroborated by ab initio calculations. We observe clear modifications in the dispersion relation for both acoustic and optical phonons in the superlattices nanowires. We find that by controlling the superlattice periodicity we can achieve tunability of the phonon frequencies. We also performed wavelength-dependent Raman microscopy on GaAs/GaP superlattice nanowires and our results indicate a reduction in the electronic bandgap in the superlattice compared to the bulk counterpart. All our experimental results are rationalized with the help of ab initio density functional perturbation theory (DFPT) calculations. This work sheds fresh insights into how material engineering at the nanoscale can tailor phonon dispersion and open pathways for thermal engineering.
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Submitted 22 September, 2023;
originally announced September 2023.
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Controlled emission of entangled multiphoton states from cascaded quantum wells
Authors:
Amir Sivan,
Meir Orenstein
Abstract:
We propose a deterministic source of entangled multiphoton states based on spontaneous emission from a ladder of a cascaded quantum well structure. The coupling between the quantum wells enables a many-path evolution with the emission of photon-number combination states in three modes. The tripartite multiphoton state can be used for controlling the entanglement between two multiphoton modes by me…
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We propose a deterministic source of entangled multiphoton states based on spontaneous emission from a ladder of a cascaded quantum well structure. The coupling between the quantum wells enables a many-path evolution with the emission of photon-number combination states in three modes. The tripartite multiphoton state can be used for controlling the entanglement between two multiphoton modes by measuring the third. We further discuss an application as a qubit-pair source with an error-detection ancilla.
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Submitted 14 March, 2023; v1 submitted 1 February, 2023;
originally announced February 2023.
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Topology of multiple cross-linked Su-Schrieffer-Heeger chains
Authors:
A. Sivan,
M. Orenstein
Abstract:
In polymer science, cross-linking of polymer chains yields a substantially modified system compared to the one-dimensional constituent chains, due to the increase of dimensionality and effective seeding by defects (cross-linking sites). Inspired by this concept, we analyze topological features of a unit cell of a generalized topological mesh comprised of several one-dimensional Su-Schrieffer-Heege…
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In polymer science, cross-linking of polymer chains yields a substantially modified system compared to the one-dimensional constituent chains, due to the increase of dimensionality and effective seeding by defects (cross-linking sites). Inspired by this concept, we analyze topological features of a unit cell of a generalized topological mesh comprised of several one-dimensional Su-Schrieffer-Heeger (SSH) lattices cross-linked via a single site. The coupling site functions as a defect with protected states in the trivial regime and also induces edges inside the bulk with protected localized states centered around it in the topological regime. When more than two lattices are coupled by the defect, namely, a graph-dimensionality larger than one, the crossed chains support two types of localized eigenstates around the defect. One type is highly controllable by modifying the cross-linking strength, enabling broad tuning of eigenenergies from being submerged in the bulk band to becoming highly isolated and protected. We show that these unique features can be explained by an equivalence of the aforementioned system to an SSH chain coupled nonreciprocally to an external reservoir, yielding a unique pseudospectrum for both the bulk and localized states, with spatially symmetric eigenstates. Applying non-Hermiticity by adding gain and loss to alternating sites, relevant for example to a possible realization of topological coupled-laser fabric, we observe an abrupt transition of the topologically protected mid-gap state from anti-localized to localized near the defect. By changing the gain-loss parameters, we observe a cascaded spatial symmetry breaking of the supported states at exceptional points where parity-time symmetry is broken, for both the localized and the bulk states, exhibiting various novel phases.
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Submitted 11 August, 2022; v1 submitted 15 February, 2022;
originally announced February 2022.
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Messy or Ordered? Multi-scale Mechanics DictatesShape-Morphing of Hierarchical 2D Fiber-Networks
Authors:
Shiran Ziv Sharabani,
Nicole Edelstein-Pardo,
Maya Molco,
Michael Morami,
Netanel Bachar Schwartz,
Aya Sivan,
Eli Flaxer,
Amit Sitt
Abstract:
Shape-morphing networks of mesoscale filaments are a common hierarchical feature in biology and hold significant potential for a range of technological applications, from micro-muscles to shape-morphing optical devices. Here, we demonstrate both experimentally and computationally that the shape-morphing of highly-ordered 2D networks constructed of thermoresponsive mesoscale polymeric fibers strong…
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Shape-morphing networks of mesoscale filaments are a common hierarchical feature in biology and hold significant potential for a range of technological applications, from micro-muscles to shape-morphing optical devices. Here, we demonstrate both experimentally and computationally that the shape-morphing of highly-ordered 2D networks constructed of thermoresponsive mesoscale polymeric fibers strongly depends on the physical attributes of the single fiber, in particular on its diameter, as well as on the network's density. We show that based on these parameters, such fiber-networks exhibit one of two thermally driven morphing behaviors: (i) the fibers stay straight, and the network preserves its ordered morphology, exhibiting a bulk-like behavior; or (ii) the fibers buckle and the network becomes messy and highly disordered. Notably, in both cases, the networks display memory and regain their original ordered morphology upon shrinking. This hierarchical principle, demonstrated here on a range of networks, offers a new way for controlling the shape morphing of materials with mesoscale resolutions and elucidates that minute changes in the mesoscale structural attributes can translate to a dramatic change in the morphing behaviors at the macroscale.
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Submitted 5 November, 2021;
originally announced November 2021.
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Diameter dependence of the temperature dynamics of hot carriers in photoexcited GaAsP nanowires
Authors:
Aswathi K Sivan,
Lorenzo Di Mario,
Yunyan Zhang,
Daniele Catone,
Patrick OKeeffe,
Stefano Turchini,
Valentina Mussi,
Huiyun Liu,
Faustino Martelli
Abstract:
Nanowires (NWs) with their quasi-one-dimensionality often present different structural and opto-electronic properties than their thin-film counterparts. The thinner they are the larger these differences are, in particular in the carrier-phonon scattering and thermal conductivity. In this work, we present femtosecond transient absorbance measurements on GaAs0.8P0.2 NWs of two different diameters, 3…
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Nanowires (NWs) with their quasi-one-dimensionality often present different structural and opto-electronic properties than their thin-film counterparts. The thinner they are the larger these differences are, in particular in the carrier-phonon scattering and thermal conductivity. In this work, we present femtosecond transient absorbance measurements on GaAs0.8P0.2 NWs of two different diameters, 36 and 51 nm. The results show that thinner NWs sustain the hot-carriers at a higher temperature for longer times than thicker NWs. We explain the observation suggesting that in thinner NWs, the build-up of a hot-phonon bottleneck is easier than in thicker NWs because of the increased phonon scattering at the NW sidewalls which facilitates the build-up of a large phonon density. The large number of optical phonons emitted during the carrier relaxation processes generate a non-equilibrium population of acoustic phonons that propagates less efficiently in thin NWs. This makes the possible acoustic-to-optical phonon up-conversion process easier, which prolongs the LO phonon lifetime resulting in the slowdown of the carrier cooling. The important observation that the carrier temperature in thin NWs is higher than in thick NWs already at the beginning of the hot carrier regime suggests that the phonon-mediated scattering processes in the non-thermal regime play a major role at least for the carrier densities investigated here (8x1018-4x1019 cm-3). Our results also suggest that the boundary scattering of phonons at crystal defects is negligible compared to the surface scattering at the NW sidewalls.
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Submitted 19 February, 2021; v1 submitted 10 February, 2021;
originally announced February 2021.
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Photoluminescence of MAPbI$_3$: a semiconductor science and technology point of view
Authors:
Valerio Campanari,
Antonio Agresti,
Sara Pescetelli,
Aswathi K. Sivan,
Daniele Catone,
Patrick O Keeffe,
Stefano Turchini,
Aldo Di Carlo,
Faustino Martelli
Abstract:
In this work, we perform steady-state continuous wave (cw) photoluminescence (PL) measurements on a MAPbI$_3$ thin film in the temperature range of 10-160 K, using excitation densities spanning over almost seven orders of magnitude, in particular investigating very low densities, rarely used in the published literature. The temperature range used in this study is below or at the edge of the orthor…
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In this work, we perform steady-state continuous wave (cw) photoluminescence (PL) measurements on a MAPbI$_3$ thin film in the temperature range of 10-160 K, using excitation densities spanning over almost seven orders of magnitude, in particular investigating very low densities, rarely used in the published literature. The temperature range used in this study is below or at the edge of the orthorhombic-tetragonal phase transition in MAPbI$_3$. In particular, we show that even in high quality MAPbI$_3$, capable of providing high photovoltaic efficiency, the defect density is high enough to give rise to an energy level band. Furthermore, we show that the intensity ratio between the two PL components related to the two crystalline phases, is a function of temperature and excitation. At high excitation intensities, we show that amplified spontaneous emission is attainable even in cw conditions. Time-resolved PL is also performed to justify some assignments of the PL features. Finally, our systematic approach, typical for the characterization of semiconductors, suggests that it should also be applied to hybrid halide perovskites and that, under suitable conditions, the PL characteristics of MAPbI$_3$ can be reconciled with those of conventional inorganic semiconductors.
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Submitted 20 August, 2020;
originally announced August 2020.
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Ultrafast optical spectroscopy of semiconducting and plasmonic nanostructures and their hybrids
Authors:
Daniele Catone,
Lorenzo Di Mario,
Faustino Martelli,
Patrick O'Keeffe,
Alessandra Paladini,
Jacopo Stefano Pelli Cresi,
Aswathi K. Sivan,
Lin Tian,
Francesco Toschi,
Stefano Turchini
Abstract:
The knowledge of the carrier dynamics in nanostructures is of fundamental importance for the development of (opto)electronic devices. This is true for semiconducting nanostructures as well as for plasmonic nanoparticles (NPs). Indeed, improvement of photocatalytic efficiencies by combining semiconductor and plasmonic nanostructures is one of the reasons why their ultrafast dynamics are intensively…
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The knowledge of the carrier dynamics in nanostructures is of fundamental importance for the development of (opto)electronic devices. This is true for semiconducting nanostructures as well as for plasmonic nanoparticles (NPs). Indeed, improvement of photocatalytic efficiencies by combining semiconductor and plasmonic nanostructures is one of the reasons why their ultrafast dynamics are intensively studied. In this work, we will review our activity on ultrafast spectroscopy in nanostructures carried out in the recently established EuroFEL Support Laboratory. We have investigated the dynamical plasmonic responses of metal NPs both in solution and in 2D and 3D arrays on surfaces, with particular attention being paid to the effects of the nanoparticle shape and to the conversion of absorbed light into heat on a nano-localized scale. We will summarize the results obtained on the carrier dynamics in nanostructured perovskites with emphasis on the hot-carrier dynamics and in semiconductor nanosystems such as ZnSe and Si nanowires, with particular attention to the band-gap bleaching dynamics. Subsequently, the study of semiconductor-metal NP hybrids, such as CeO$_2$-Ag NPs, ZnSe-Ag NPs and ZnSe-Au NPs, allows the discussion of interaction mechanisms such as charge carrier transfer and F{ö}rster interaction. Finally, we assess an alternative method for the sensitization of wide band gap semiconductors to visible light by discussing the relationship between the carrier dynamics of TiO$_2$ NPs and V-doped TiO$_2$ NPs and their catalytic properties.
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Submitted 18 September, 2020; v1 submitted 10 August, 2020;
originally announced August 2020.
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Optical properties and carrier dynamics in Co-doped ZnO nanorods
Authors:
Aswathi K. Sivan,
Alejandro Galan-Gonzalez,
Lorenzo Di Mario,
Nicolas Tappy,
Javier Hernandez-Ferrer,
Daniele Catone,
Stefano Turchini,
Ana M. Benito,
Wolfgang K. Maser,
Simon Escobar Steinvall,
Anna Fontcuberta i Morral,
Andrew Gallant,
Dagou A. Zeze,
Del Atkinson,
Faustino Martelli1
Abstract:
The controlled modification of the electronic properties of ZnO nanorods via transition metal do** is reported. A series of ZnO nanorods were synthesized by chemical bath growth with varying Co content from 0 to 20 atomic % in the growth solution. Optoelectronic behavior was probed using cathodoluminescence, time-resolved luminescence, transient absorbance spectroscopy, and the incident photon-t…
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The controlled modification of the electronic properties of ZnO nanorods via transition metal do** is reported. A series of ZnO nanorods were synthesized by chemical bath growth with varying Co content from 0 to 20 atomic % in the growth solution. Optoelectronic behavior was probed using cathodoluminescence, time-resolved luminescence, transient absorbance spectroscopy, and the incident photon-to-current conversion efficiency (IPCE). Analysis indicates the crucial role of surface defects in determining the electronic behavior. Significantly, Co-do** extends the light absorption of the nanorods into the visible region, increases the surface defects, shortens the non-radiative lifetimes, while leaving the radiative lifetime constant. Furthermore, for 1 atomic % Co-do** the IPCE of the ZnO nanorods is enhanced. These results demonstrate that do** can controllably tune the functional electronic properties of ZnO nanorods for applications.
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Submitted 30 June, 2020;
originally announced June 2020.
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Plasmon induced resonant effects on the optical properties of Ag-decorated ZnSe nanowires
Authors:
Aswathi K Sivan,
Lorenzo Di Mario,
Daniele Catone,
Patrick OKeeffe,
Stefano Turchini,
Silvia Rubini,
Faustino Martelli
Abstract:
In this work we present how the optical properties of ZnSe nanowires are modified by the presence of Ag nanoparticles on the sidewalls of the ZnSe nanowires. In particular we show that the low-temperature luminescence of the ZnSe nanowires changes its shape, enhancing the phonon-replicas of impurity related recombination and affecting rise and decay times of the transient absorption bleaching at r…
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In this work we present how the optical properties of ZnSe nanowires are modified by the presence of Ag nanoparticles on the sidewalls of the ZnSe nanowires. In particular we show that the low-temperature luminescence of the ZnSe nanowires changes its shape, enhancing the phonon-replicas of impurity related recombination and affecting rise and decay times of the transient absorption bleaching at room temperatures, with an increase of the former and a decrease of the latter. In contrast, the deposition of Au NPs on the ZnSe nanowires does not change the optical properties of the sample. We suggest that the mechanism underlying these experimental observations is energy transfer via the Foerster interaction based on the fact that the localized surface plasmon resonance (LSPR) of Ag nanoparticles spectrally overlaps with absorption and emission of ZnSe while the Au LSPR does not.
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Submitted 25 February, 2020;
originally announced February 2020.
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Carrier dynamics in silicon nanowires studied via femtosecond transient optical spectroscopy from 1.1 to 3.5 eV
Authors:
Lin Tian,
Lorenzo Di Mario,
Aswathi K Sivan,
Daniele Catone,
Patrick O Keeffe,
Alessandra Paladini,
Stefano Turchini,
Faustino Martelli
Abstract:
We present femtosecond transient transmission (or absorbance) measurements in silicon nanowires in the energy range 1.1-3.5 eV, from below the indirect band-gap to above the direct band-gap. Our pump-probe measurements allow us to give a complete picture of the carrier dynamics in silicon. In this way we perform an experimental study with a spectral completeness that lacks in the whole literature…
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We present femtosecond transient transmission (or absorbance) measurements in silicon nanowires in the energy range 1.1-3.5 eV, from below the indirect band-gap to above the direct band-gap. Our pump-probe measurements allow us to give a complete picture of the carrier dynamics in silicon. In this way we perform an experimental study with a spectral completeness that lacks in the whole literature on carrier dynamics in silicon. A particular emphasis is given to the dynamics of the transient absorbance at the energies relative to the direct band gap at 3.3 eV. Indeed, the use of pump energies below and above 3.3 eV allowed us to disentangle the dynamics of electrons and holes in their respective bands. The band gap renormalization of the direct band gap is also investigated for different pump energies. A critical discussion is given on the results below 3.3 eV where phonon-assisted processes are required in the optical transitions.
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Submitted 27 February, 2019;
originally announced February 2019.
