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Role of polarized tip-enhanced Raman spectroscopy in the enhancement of interface optical phonon modes in AlGaN multi-quantum wells
Authors:
A. K. Sivadasan,
Prajit Dhara,
Chirantan Singha,
Raktima Basu,
Santanu Parida,
A. Bhattacharyya,
Kishore K. Madapu,
Sandip Dhara
Abstract:
Group III nitride based two-dimensional multi-quantum well (MQW) nanostructures find remarkable applications in the visible to ultraviolet light sources. The interface optical (IFO) phonon modes in a c-axis oriented superlattice of [Al0.35Ga0.65N (~1.75 nm)/Al0.55Ga0.45N (~2nm)]20 MQWs are observed using tip-enhanced Raman spectroscopic (TERS) studies. The near-field studies using TERS probe with…
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Group III nitride based two-dimensional multi-quantum well (MQW) nanostructures find remarkable applications in the visible to ultraviolet light sources. The interface optical (IFO) phonon modes in a c-axis oriented superlattice of [Al0.35Ga0.65N (~1.75 nm)/Al0.55Ga0.45N (~2nm)]20 MQWs are observed using tip-enhanced Raman spectroscopic (TERS) studies. The near-field studies using TERS probe with an Au spherical nanoparticle of ~ 200 nm diameter were carried out at ambient conditions showing approximately two to three orders of enhancement in the Raman intensities. The interface phonon mode belonging to E1 symmetry [IFO(E1)] vibrating normal to the c-axis of MQWs appeared to be more prominent in the case of TERS measurement compared to that for the other interface phonon mode of A1 symmetry. The confined electric field of the polarized electro-magnetic excitation using TERS probe, parallel to the plane of the interface of MQW, is made responsible for the plasmonic enhancement of IFO(E1) phonon mode. The confinement was verified using finite-difference time-domain simulation.
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Submitted 14 October, 2019; v1 submitted 5 October, 2018;
originally announced October 2018.
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Spectroscopically forbidden infra-red emission in Au-vertical graphene hybrid nanostructures
Authors:
A. K. Sivadasan,
Santanu Parida,
Subrata Ghosh,
Ramanathaswamy Pandian,
Sandip Dhara
Abstract:
Implementation of Au nanoparticles (NPs) is a subject for frontier plasmonic research due to its fascinating optical properties. Herein, the present study deals with plasmonic assisted emission properties of Au NPs-vertical graphene (VG) hybrid nanostructures. The influence of effective polarizability of Au NPs on the surface enhanced Raman scattering and luminescence properties is investigated. I…
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Implementation of Au nanoparticles (NPs) is a subject for frontier plasmonic research due to its fascinating optical properties. Herein, the present study deals with plasmonic assisted emission properties of Au NPs-vertical graphene (VG) hybrid nanostructures. The influence of effective polarizability of Au NPs on the surface enhanced Raman scattering and luminescence properties is investigated. In addition, a remarkable infra-red (IR) emission in the hybrid nanostructures is observed and interpreted on the basis of intra-band transitions in Au NPs. The flake-like nanoporous VG structure is invoked for the generation of additional confined photons to impart additional momentum and a gradient of confined excitation energy towards initiating the intra-band transitions of Au NPs. Integrating Au plasmonic materials in three-dimensional VG nanostructures enhances the light-matter interactions. The present study provides a new adaptable plasmonic assisted pathway for optoelectronic and sensing applications.
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Submitted 8 June, 2018;
originally announced June 2018.
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Effect of Scattering Efficiency in the Tip Enhanced Raman Spectroscopic Imaging of Nanostructures in the Sub Diffraction Limit
Authors:
A. K. Sivadasan,
Avinash Patsha,
Achyut Maity,
Tapas Kumar Chini,
Sandip Dhara
Abstract:
The experimental limitations in the signal enhancement and spatial resolution in spectroscopic imaging have been always a challenging task in the application of near-field spectroscopy for nanostructured materials in the sub-diffraction limit. In addition, the scattering efficiency also plays an important role in improving signal enhancement and contrast of the spectroscopic imaging of nanostructu…
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The experimental limitations in the signal enhancement and spatial resolution in spectroscopic imaging have been always a challenging task in the application of near-field spectroscopy for nanostructured materials in the sub-diffraction limit. In addition, the scattering efficiency also plays an important role in improving signal enhancement and contrast of the spectroscopic imaging of nanostructures by scattering of light. We report the effect of scattering efficiency in the Raman intensity enhancement, and contrast generation in near-field tip-enhanced Raman spectroscopic (TERS) imaging of one dimensional inorganic crystalline nanostructures of Si and AlN having a large variation in polarizability change. The Raman enhancement of pure covalently bonded Si nanowire (NW) is found to be two orders of higher in magnitude for the TERS imaging, as compared to that of AlN nanotip (NT) having a higher degree of ionic bonding, suggesting the importance of scattering efficiency of the materials in TERS imaging. The strong contrast generation due to higher signal enhancement in TERS imaging of Si NW also helped in achieving the better resolved spectroscopic images than that of the AlN NT. The study provides an insight into the role of scattering efficiency in the resolution of near-field spectroscopic images.
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Submitted 8 June, 2018; v1 submitted 24 May, 2017;
originally announced May 2017.
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Observation of surface plasmon polaritons in 2D electron gas of surface electron accumulation in InN nanostructures
Authors:
Kishore Kumar Madapu,
Alppettiyil Krishnankutty Sivadasan,
Madhusmita Baral,
Sandip Dhara
Abstract:
Recently, heavily doped semiconductors are emerging as an alternate for low loss plasmonic materials. InN, belonging to the group III nitrides, possesses the unique property of surface electron accumulation (SEA) which provides two dimensional electron gas (2DEG) system. In this report, we demonstrated the surface plasmon properties of InN nanoparticles originating from SEA using the real space ma…
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Recently, heavily doped semiconductors are emerging as an alternate for low loss plasmonic materials. InN, belonging to the group III nitrides, possesses the unique property of surface electron accumulation (SEA) which provides two dimensional electron gas (2DEG) system. In this report, we demonstrated the surface plasmon properties of InN nanoparticles originating from SEA using the real space map** of the surface plasmon fields for the first time. The SEA is confirmed by Raman studies which are further corroborated by photoluminescence and photoemission spectroscopic studies. The frequency of 2DEG corresponding to SEA is found to be in the THz region. The periodic fringes are observed in the near-field scanning optical microscopic images of InN nanostructures. The observed fringes are attributed to the interference of propagated and back reflected surface plasmon polaritons (SPPs). The observation of SPPs is solely attributed to the 2DEG corresponding to the SEA of InN. In addition, resonance kind of behavior with the enhancement of the near-field intensity is observed in the near-field images of InN nanostructures. Observation of SPPs indicates that InN with SEA can be a promising THz plasmonic material for the light confinement.
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Submitted 8 June, 2018; v1 submitted 21 May, 2017;
originally announced May 2017.
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Near Field Scanning Optical Imaging of Gold Nanoparticles in the Sub-Wavelength Limit
Authors:
Prajit Dhara,
A. K. Sivadasan
Abstract:
The near-field scanning optical microscopic (NSOM) imaging of Au nanoparticles with size in the sub-wavelength limit (<wavelength/2N.A.) is reported. The NSOM imaging technique can resolve the objects which is beyond the scope of optical microscope using visible light (wavelength=500 nm) with objectives having a numerical aperture (N.A.) close to unity. The role of evanescent waves which is an exp…
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The near-field scanning optical microscopic (NSOM) imaging of Au nanoparticles with size in the sub-wavelength limit (<wavelength/2N.A.) is reported. The NSOM imaging technique can resolve the objects which is beyond the scope of optical microscope using visible light (wavelength=500 nm) with objectives having a numerical aperture (N.A.) close to unity. The role of evanescent waves which is an exponentially decaying field with higher momenta i.e., lower wavelengths compared to that of normal light, in the metal dielectric interface is realized for imaging of noble metal nanostructures with sub-wavelength dimension in the near field. However, the confined light with components of evanescent waves, emanating from the NSOM probe, interacts with the oscillating dipoles present in the sub-diffraction limited nanostructures and produce propagating waves, which can be recorded by the far field detector. The light-matter interactions of Au nanoparticles of diameters in the range of 10-150 nm probed by the NSOM technique with a visible excitation of 532 nm are reported. The strong surface plasmon resonance (SPR) related absorption of Au nanoparticles is envisaged for explaining the contrast variations in the recorded NSOM images.
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Submitted 21 May, 2017;
originally announced May 2017.
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Optical imaging of metallic and semiconductor nanostructures at sub wavelength regime
Authors:
A. K. Sivadasan,
Kishore K. Madapu,
Prajit Dhara
Abstract:
The near field scanning optical microscopy (NSOM) is not only a tool for imaging of objects in the sub wavelength limit but also a prominent characteristic tool for understanding the intrinsic properties of the nanostructures. The effect of strong localized surface plasmon resonance absorption of excitation laser in the NSOM images for Au nanoparticles is observed. The role of electronic transitio…
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The near field scanning optical microscopy (NSOM) is not only a tool for imaging of objects in the sub wavelength limit but also a prominent characteristic tool for understanding the intrinsic properties of the nanostructures. The effect of strong localized surface plasmon resonance absorption of excitation laser in the NSOM images for Au nanoparticles is observed. The role of electronic transitions from different native defect related energy states of AlGaN are also discussed in understanding the NSOM images for the semiconductor nanowire.
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Submitted 12 May, 2017;
originally announced May 2017.
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Interface Phonon Modes in the [AlN/GaN]20 and [Al0.35Ga0.65N/Al0.55Ga0.45N]20 2D Multi Quantum Well Structures
Authors:
A. K. Sivadasan,
Chirantan Singha,
A. Bhattacharyya,
Sandip Dhara
Abstract:
Interface phonon (IF) modes of c-plane oriented [AlN/GaN]20 and Al0.35Ga0.65N/Al0.55Ga0.45N]20 multi quantum well (MQW) structures grown via plasma assisted molecular beam epitaxy are reported. The effect of variation in dielectric constant of barrier layers to the IF optical phonon modes of well layers periodically arranged in the MQWs investigated.
Interface phonon (IF) modes of c-plane oriented [AlN/GaN]20 and Al0.35Ga0.65N/Al0.55Ga0.45N]20 multi quantum well (MQW) structures grown via plasma assisted molecular beam epitaxy are reported. The effect of variation in dielectric constant of barrier layers to the IF optical phonon modes of well layers periodically arranged in the MQWs investigated.
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Submitted 12 May, 2017;
originally announced May 2017.
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Optical properties of AlGaN nanowires synthesized via ion beam techniques
Authors:
Santanu Parida,
P. Magudapathy,
A. K. Sivadasan,
Ramanathaswamy Pandian,
Sandip Dhara
Abstract:
AlGaN plays a vital role in hetero-structure high electron mobility transistor by employing a two-dimensional electron gas and as electron blocking layer in the multi quantum well light emitting diodes. Nevertheless, the incorporation of Al in GaN for the formation of AlGaN alloy is limited by the diffusion barrier formed by instant nitridation of Al adatoms by reactive atomic N. Incorporation of…
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AlGaN plays a vital role in hetero-structure high electron mobility transistor by employing a two-dimensional electron gas and as electron blocking layer in the multi quantum well light emitting diodes. Nevertheless, the incorporation of Al in GaN for the formation of AlGaN alloy is limited by the diffusion barrier formed by instant nitridation of Al adatoms by reactive atomic N. Incorporation of Al above the miscibility limit, however can be achieved by ion beam technique. The well known ion beam mixing (IBM) technique was carried out with the help of Ar+ irradiation for different fluences. A novel approach was also adopted for the synthesis of AlGaN by the process of post irradiation diffusion (PID) as a comparative study with the IBM technique. The optical investigations of AlGaN nanowires, synthesized via two different methods of ion beam processing are reported. The effect of irradiation fluence and post irradiation annealing temperature on the random alloy formation were studied by the vibrational and photoluminescence (PL) spectroscopic studies. Vibrational studies show one-mode phonon behavior corresponding to longitudinal optical (LO) mode of A1 symmetry (A1(LO)) for the wurtzite phase of AlGaN nanowires in the random alloy model. Maximum Al atomic percentage ~6.3-6.7% was calculated with the help of band bowing formalism from the Raman spectral analysis for samples synthesized in IBM and PID processes. PL studies show the extent of defects present in these samples.
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Submitted 10 May, 2017;
originally announced May 2017.
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Light-matter interaction of single semiconducting AlGaN nanowire and noble metal Au nanoparticle in the sub-diffraction limit
Authors:
A. K. Sivadasan,
Kishore K. Madapu,
Sandip Dhara
Abstract:
The near field scanning optical microscopy (NSOM) is not only a tool for imaging of sub-diffraction limited objects but also a prominent characteristic tool for understanding the intrinsic properties of the nanostructures. In order to understand the light-matter interactions in the near field regime using NSOM technique with an excitation of 532 nm (2.33 eV), we selected an isolated single semicon…
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The near field scanning optical microscopy (NSOM) is not only a tool for imaging of sub-diffraction limited objects but also a prominent characteristic tool for understanding the intrinsic properties of the nanostructures. In order to understand the light-matter interactions in the near field regime using NSOM technique with an excitation of 532 nm (2.33 eV), we selected an isolated single semiconducting AlGaN nanowire (NW) of diameter ~120 nm grown via vapor liquid solid (VLS) mechanism along with metallic Au nanoparticle (NP) catalyst. The role of electronic transitions from different native defect related energy states of AlGaN are discussed in understanding the NSOM images for the semiconducting NW. The effect of strong surface plasmon resonance absorption of excitation laser in the NSOM images for Au NP, involved in the VLS growth mechanism of NWs, is also observed. Keywo
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Submitted 11 May, 2016;
originally announced May 2016.
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Far field photoluminescence imaging of single AlGaN nanowire in the sub-diffraction length scale using optical confinement of polarized light
Authors:
A. K. Sivadasan,
Manas Sardar,
Sandip Dhara
Abstract:
Till now the nanoscale focussing and imaging in the sub-diffraction limit is achieved mainly with the help of plasmonic field enhancement assisted with noble metal nanoparticles. Using far field imaging technique, we have recorded polarized spectroscopic photoluminescence (PL) imaging of a single AlGaN nanowire (NW) of diameter ~ 100 nm using confinement of polarized light. The nanowires on the su…
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Till now the nanoscale focussing and imaging in the sub-diffraction limit is achieved mainly with the help of plasmonic field enhancement assisted with noble metal nanoparticles. Using far field imaging technique, we have recorded polarized spectroscopic photoluminescence (PL) imaging of a single AlGaN nanowire (NW) of diameter ~ 100 nm using confinement of polarized light. The nanowires on the substrate have a nematic ordering. It is found that the PL from a single NW is influenced by the proximity to other NWs with the PL intensity scaling as 1/(lxd), where l and d are the NW length and the separation from the neighbouring NW, respectively. We show that this proximity induced PL intensity enhancement can be understood, if we assume the existence of reasonably long lived photons in the intervening space between the NWs. A nonzero non-equilibrium population of such photons causes stimulated emission leading to the enhanced PL emission with the intensity scaling as 1/(lxd). The effect is analogous to the Purcell enhancement of polarized optical emissions induced by confined photons in micro-cavities. The enhancement of PL emission facilitated the far field spectroscopic imaging of a single semiconducting nanowire in the sub-diffraction regime.
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Submitted 11 May, 2016;
originally announced May 2016.
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Piezoelectric Domains in the AlGaN Hexagonal Microrods: Effect of Crystal Orientations
Authors:
A. K. Sivadasan,
G. Mangamma,
S. Bera,
M. Kamruddin,
S. Dhara
Abstract:
Presently, the piezoelectric materials are finding tremendous applications in the micro-mechanical actuators, sensors and self-powered devices. In this context, the studies pertaining to piezoelectric properties of materials in the different size ranges are very important for the scientific community. The III-nitrides are exceptionally important, not only for optoelectronic but also for their piez…
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Presently, the piezoelectric materials are finding tremendous applications in the micro-mechanical actuators, sensors and self-powered devices. In this context, the studies pertaining to piezoelectric properties of materials in the different size ranges are very important for the scientific community. The III-nitrides are exceptionally important, not only for optoelectronic but also for their piezoelectric applications. In the present study, we synthesized AlGaN via self catalytic vapor-solid mechanism by atmospheric pressure chemical vapor deposition technique on AlN base layer over intrinsic Si(100) substrate. The growth process is substantiated using X-ray diffraction and X-ray photoelectron spectroscopy. The Raman and photoluminescence study reveal the formation of AlGaN microrods in the wurtzite phase and ensures the high optical quality of the crystalline material. The single crystalline, direct wide band gap and hexagonally shaped AlGaN microrods are studied for understanding the behavior of the crystallites under the application of constant external electric field using the piezoresponse force microscopy. The present study is mainly focused on understanding the behavior of induced polarization for the determination of piezoelectric coefficient of AlGaN microrod along the c-axis and imaging of piezoelectric domains in the sample originating because of the angular inclination of AlGaN microrods with respect to its AlN base layers.
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Submitted 11 May, 2016;
originally announced May 2016.
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Polarized Raman and photoluminescence studies of a sub-micron sized hexagonal AlGaN crystallite for structural and optical properties
Authors:
A. K. Sivadasan,
S. Dhara
Abstract:
The polarized Raman spectroscopy is capable of giving confirmation regarding the crystalline phase as well as the crystallographic orientation of the sample. In this context, apart from crystallographic x-ray and electron diffraction tools, polarized Raman spectroscopy and corresponding spectral imaging can be a promising crystallographic tool for determining both crystalline phase and orientation…
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The polarized Raman spectroscopy is capable of giving confirmation regarding the crystalline phase as well as the crystallographic orientation of the sample. In this context, apart from crystallographic x-ray and electron diffraction tools, polarized Raman spectroscopy and corresponding spectral imaging can be a promising crystallographic tool for determining both crystalline phase and orientation. Sub-micron sized hexagonal AlGaN crystallites are grown by a simple atmospheric pressure chemical vapor deposition technique using the self catalytic vapor-solid process under N-rich condition. The crystallites are used for the polarized Raman spectra in different crystalline orientations along with spectral imaging studies. The results obtained from the polarized Raman spectral studies shows single crystalline nature of sub-micron sized hexagonal AlGaN crystallites. Optical properties of the crystallites for different crystalline orientations are also studied using polarized photoluminescence measurements. The influence of internal crystal field to the photoluminescence spectra is proposed to explain the distinctive observation of splitting of emission intensity reported, for the first time, in case of c-plane oriented single crystalline AlGaN crystallite as compared to that of m-plane oriented crystallite.
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Submitted 11 May, 2016;
originally announced May 2016.
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Optically confined polarized resonance Raman studies in identifying crystalline orientation of sub-diffraction limited AlGaN nanostructure
Authors:
A. K. Sivadasan,
Avinash Patsha,
Sandip Dhara
Abstract:
An optical characterization tool of Raman spectroscopy with extremely weak scattering cross section tool is not popular to analyze scattered signal from a single nanostructure in the sub-diffraction regime. In this regard, plasmonic assisted characterization tools are only relevant in spectroscopic studies of nanoscale object in the sub-diffraction limit. We have reported polarized resonance Raman…
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An optical characterization tool of Raman spectroscopy with extremely weak scattering cross section tool is not popular to analyze scattered signal from a single nanostructure in the sub-diffraction regime. In this regard, plasmonic assisted characterization tools are only relevant in spectroscopic studies of nanoscale object in the sub-diffraction limit. We have reported polarized resonance Raman spectroscopic (RRS) studies with strong electron-phonon coupling to understand the crystalline orientation of a single AlGaN nanowire of diameter about 100 nm. AlGaN nanowire is grown by chemical vapor deposition technique using the catalyst assisted vapor-liquid-solid process. The results are compared with the high resolution transmission electron microscopic analysis. As a matter of fact, optical confinement effect due to the dielectric contrast of nanowire with respect to that of surrounding media assisted with electron-phonon coupling of RRS are useful for the spectroscopic analysis in the sub-diffraction limit of 325 nm (lamda(2N.A.)^(-1)) using an excitation wavelength (lamda) of 325 nm and near ultraviolet 40X far field objective with a numerical aperture (N.A.) value of 0.50.
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Submitted 1 September, 2015;
originally announced April 2016.
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Optical Properties of Mono-Dispersed AlGaN Nanowires in the Single-Prong Growth Mechanism
Authors:
A. K. Sivadasan,
Avinash Patsha,
S. Polaki,
S. Amirthapandian,
Sandip Dhara,
Anirban Bhattacharya,
B. K. Panigrahi,
A. K. Tyagi
Abstract:
Growth of mono-dispersed AlGaN nanowires of ternary wurtzite phase is reported using chemical vapour deposition technique in the vapour-liquid-solid process. The role of distribution of Au catalyst nanoparticles on the size and the shape of AlGaN nanowires are discussed. These variations in the morphology of the nanowires are understood invoking Ostwald ripening of Au catalyst nanoparticles at hig…
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Growth of mono-dispersed AlGaN nanowires of ternary wurtzite phase is reported using chemical vapour deposition technique in the vapour-liquid-solid process. The role of distribution of Au catalyst nanoparticles on the size and the shape of AlGaN nanowires are discussed. These variations in the morphology of the nanowires are understood invoking Ostwald ripening of Au catalyst nanoparticles at high temperature followed by the effect of single and multi-prong growth mechanism. Energy-filtered transmission electron microscopy is used as an evidence for the presence of Al in the as-prepared samples. A significant blue shift of the band gap, in the absence of quantum confinement effect in the nanowires with diameter about 100 nm, is used as a supportive evidence for the AlGaN alloy formation. Polarized resonance Raman spectroscopy with strong electron-phonon coupling along with optical confinement due to the dielectric contrast of nanowire with respect to that of surrounding media are adopted to understand the crystalline orientation of a single nanowire in the sub-diffraction limit of about 100 nm using 325 nm wavelength, for the first time. The results are compared with the structural analysis using high resolution transmission microscopic study.
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Submitted 1 September, 2015;
originally announced September 2015.
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Invoking forbidden modes in SnO_2 nanoparticles using tip enhanced Raman spectroscopy
Authors:
Venkataramana Bonu,
A. Das,
A. K. Sivadasan,
A. K. Tyagi,
Sandip Dhara
Abstract:
Raman forbidden modes and surface defect related Raman features in SnO_2 nanostructures carry information about disorder and surface defects which strongly influence important technological applications like catalysis and sensing. Due to the weak intensities of these peaks, it is difficult to identify these features by using conventional Raman spectroscopy. Tip enhanced Raman spectroscopy (TERS) s…
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Raman forbidden modes and surface defect related Raman features in SnO_2 nanostructures carry information about disorder and surface defects which strongly influence important technological applications like catalysis and sensing. Due to the weak intensities of these peaks, it is difficult to identify these features by using conventional Raman spectroscopy. Tip enhanced Raman spectroscopy (TERS) studies conducted on SnO_2 nanoparticles (NPs) of size 4 and 25 nm have offered significant insights of prevalent defects and disorders. Along with one order enhancement in symmetry allowed Raman modes, new peaks related to disorder and surface defects of SnO_2 NPs were found with significant intensity. Temperature dependent Raman studies were also carried out for these NPs and correlated with the TERS spectra. For quasi-quantum dot sized 4 nm NPs, the TERS study was found to be the best technique to probe the finite size related Raman forbidden modes.
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Submitted 31 August, 2015;
originally announced August 2015.
