Showing 1–35 of 35 results for author: Siu, Z B

Exceptional Points and Braiding Topology in Non-Hermitian Systems with long-range coupling

Authors: S. M. Rafi-Ul-Islam, Zhuo Bin Siu, Md. Saddam Hossain Razo, Mansoor B. A. Jalil

Abstract: We present a study of complex energy braiding in a 1D non-Hermitian system with $n$th order long range asymmetrical coupling. Our work highlights the emergence of novel topological phenomena in such systems beyond the conventional nearest-neighbor interaction. The modified SSH model displays $n$ distinct knots and links combinations in the complex energy-momentum space under periodic boundary cond… ▽ More We present a study of complex energy braiding in a 1D non-Hermitian system with $n$th order long range asymmetrical coupling. Our work highlights the emergence of novel topological phenomena in such systems beyond the conventional nearest-neighbor interaction. The modified SSH model displays $n$ distinct knots and links combinations in the complex energy-momentum space under periodic boundary conditions (PBC), which can be controlled by varying the coupling strengths. A topological invariant, namely the braiding index, is introduced to characterize the different complex energy braiding profiles, which depends on the zeros and poles of the characteristic polynomials. Furthermore, we demonstrate that the non-Hermitian skin effect can be localized at one or both ends, signifying conventional or bipolar localization, depending on the sign of the braiding index. Phase transitions between different braiding phases with the same (opposite) sign of the topological invariant occur at Type-1 (Type-2) exceptional points, with Type-1 (Type-2) phase transitions accompanied by single (multiple) exceptional points. We propose an experimental set-up to realize the various braiding schemes based on the RLC circuit framework, which provides an accessible avenue for implementation without recourse to high-dimensional momentum space required in most other platforms. △ Less

Submitted 5 July, 2024; originally announced July 2024.

Comments: 12 figures

Saturation Dynamics in Non-Hermitian Topological Sensing Systems

Authors: S. M. Rafi-Ul-Islam, Zhuo Bin Siu, Md. Saddam Hossain Razo, Mansoor B. A. Jalil

Abstract: A class of non-Hermitian topological sensors (NTOSs) was recently proposed in which the NTOS comprises a non-Hermitian Su-Schrieffer-Heeger chain with a measurant-dependent coupling between the two ends of the chain. The smallest eigenenergy of the system, which serves as the readout signal, has an exponential dependence on the system size at small system sizes but saturates above a critical size.… ▽ More A class of non-Hermitian topological sensors (NTOSs) was recently proposed in which the NTOS comprises a non-Hermitian Su-Schrieffer-Heeger chain with a measurant-dependent coupling between the two ends of the chain. The smallest eigenenergy of the system, which serves as the readout signal, has an exponential dependence on the system size at small system sizes but saturates above a critical size. In this study, we further elucidate the dependence of the sensor sensitivity and saturation behavior on the system parameters. We explain how the behavior of the NTOS is characterized by a winding number, which indicates whether the smallest eigenenergy decreases to zero exponentially with the system size or grows exponentially up to a critical size. Interestingly, we further show that by imposing unidirectionality on the coupling between the two ends of a sensor, we can flip the size dependence of the smallest eigenenergy value from an exponentially increasing trend to an exponentially decreasing one. Our findings provide important insights into the saturation phenomenon and the impact of terminal couplings on the sensing characteristics of NTOSs. △ Less

Submitted 27 June, 2024; originally announced June 2024.

Comments: 13 pages, 5 figures

Second-order charge and spin transport in LaO/STO system in the presence of cubic Rashba spin orbit couplings

Authors: Zhuo Bin Siu, Anirban Kundu, Mansoor B. A. Jalil

Abstract: Certain non-centrosymmetric materials with broken time-reversal symmetry may exhibit non-reciprocal transport behavior under an applied electric field in which the charge and spin currents contain components that are second order in the electric field. In this study, we investigate the second-order spin accumulation and charge and spin responses in the LaAlO$_3$/SrTiO$_3$ (LaO/STO) system with mag… ▽ More Certain non-centrosymmetric materials with broken time-reversal symmetry may exhibit non-reciprocal transport behavior under an applied electric field in which the charge and spin currents contain components that are second order in the electric field. In this study, we investigate the second-order spin accumulation and charge and spin responses in the LaAlO$_3$/SrTiO$_3$ (LaO/STO) system with magnetic dopants under the influence of linear and cubic Rashba spin-orbit coupling (RSOC) terms. We explain the physical origin of the second-order response and perform a symmetry analysis of the first and second-order responses for different dopant magnetization directions relative to the applied electric field. We then numerically solve the Boltzmann transport equation by extending the approach of Schliemann and Loss [Phys. Rev. B 68, 165311] to higher orders in the electric field. We show that the sign of the second-order responses can be switched by varying the magnetization direction of the magnetic dopants or relative strengths of the two cubic RSOC terms and explain these trends by considering the Fermi surfaces of the respective systems. These findings provide insights into the interplay of multiple SOC effects in a LaO/STO system and how the resulting first- and second-order charge and spin responses can be engineered by exploiting the symmetries of the system. △ Less

Submitted 4 February, 2024; originally announced February 2024.

Twisted topology and Bipolar Non-Hermitian Skin Effect induced by long-range asymmetric coupling

Authors: S. M. Rafi-Ul-Islam, Zhuo Bin Siu, Haydar Sahin, Md. Saddam Hossain Razo, Mansoor B. A. Jalil

Abstract: We investigate the twisted topology of the complex eigenspectrum of a one-dimensional non-Hermitian system under the influence of long-range unidirectional coupling. Unlike the complex energy spectrum of the conventional Hatano-Nelson chain, which takes the form of a single loop with a topological winding index of a definite sign, the introduction of long-range unidirectional hop** results in th… ▽ More We investigate the twisted topology of the complex eigenspectrum of a one-dimensional non-Hermitian system under the influence of long-range unidirectional coupling. Unlike the complex energy spectrum of the conventional Hatano-Nelson chain, which takes the form of a single loop with a topological winding index of a definite sign, the introduction of long-range unidirectional hop** results in the creation of multiple twisted loops. These twisted loops exhibit opposite signs of the topological winding index, which correlate to alternating clockwise and anticlockwise energy windings. The simultaneous presence of both signs of the winding index translates into a bipolar non-Hermitian skin effect (NHSE), which challenges the conventional wisdom that the NHSE localization is dependent on the direction of the dominant nearest-neighbor interactions. In this bipolar NHSE, the exponents of the complex energy eigenvectors corresponding to clockwise and anti-clockwise windings, lie inside and outside of the complex unit circle, respectively. Interestingly, at the intersections of oppositely oriented energy loops where the sign of the topological winding index flips, the energy becomes real-valued, leading to a suppression of the NHSE. This marks the emergence of Bloch-like contact points, where both the bipolar NHSE and the traditional NHSE vanish. Based on the non-Hermitian model we provide analytical insights into the effects of long-range unidirectional coupling to the winding topology of its complex energy spectra and their broader implications for the field of condensed matter physics. △ Less

Submitted 20 December, 2023; originally announced December 2023.

Comments: 11 pages, 3 figures

Engineering Higher-Order Dirac and Weyl Semimetallic phase in 3D Topolectrical Circuits

Authors: S. M. Rafi-Ul-Islam, Zhuo Bin Siu, Haydar Sahin, Mansoor B. A. Jalil

Abstract: We propose a 3D topolectrical (TE) network that can be tuned to realize various higher-order topological gapless and chiral phases. We first study a higher-order Dirac semimetal phase that exhibits a hinge-like Fermi arc linking the Dirac points. This circuit can be extended to host highly tunable first- and second-order Weyl semimetal phases by introducing a non-reciprocal resistive coupling in t… ▽ More We propose a 3D topolectrical (TE) network that can be tuned to realize various higher-order topological gapless and chiral phases. We first study a higher-order Dirac semimetal phase that exhibits a hinge-like Fermi arc linking the Dirac points. This circuit can be extended to host highly tunable first- and second-order Weyl semimetal phases by introducing a non-reciprocal resistive coupling in the x-y plane that breaks time reversal symmetry. The first- and second-order Weyl points are connected by zero-admittance surface and hinge states, respectively. We also study the emergence of first- and second-order chiral modes induced by resistive couplings between similar nodes in the z-direction. These modes respectively occur in the midgap of the surface and hinge admittance bands in our circuit model without the need for any external magnetic field. △ Less

Submitted 27 February, 2024; v1 submitted 20 March, 2023; originally announced March 2023.

Comments: 14 pages, 9 figures

Impedance responses and size-dependent resonances in topolectrical circuits via the method of images

Authors: Haydar Sahin, Zhuo Bin Siu, S. M. Rafi-Ul-Islam, Jian Feng Kong, Mansoor B. A. Jalil, Ching Hua Lee

Abstract: Resonances in an electric circuit occur when capacitive and inductive components are present together. Such resonances appear in admittance measurements depending on the circuit's parameters and the driving AC frequency. In this study, we analyze the impedance characteristics of nontrivial topolectrical circuits such as one- and two-dimensional Su-Schrieffer-Heeger circuits and reveal that size-de… ▽ More Resonances in an electric circuit occur when capacitive and inductive components are present together. Such resonances appear in admittance measurements depending on the circuit's parameters and the driving AC frequency. In this study, we analyze the impedance characteristics of nontrivial topolectrical circuits such as one- and two-dimensional Su-Schrieffer-Heeger circuits and reveal that size-dependent anomalous impedance resonances inevitably arise in finite $LC$ circuits. Through the \textit{method of images}, we study how resonance modes in a multi-dimensional circuit array can be nontrivially modified by the reflection and interference of current from the structure and boundaries of the lattice. We derive analytic expressions for the impedance across two corner nodes of various lattice networks with homogeneous and heterogeneous circuit elements. We also derive the irregular dependency of the impedance resonance on the lattice size, and provide integral and dimensionally-reduced expressions for the impedance in three dimensions and above. △ Less

Submitted 18 August, 2023; v1 submitted 12 December, 2022; originally announced December 2022.

Comments: 24 pages, 10 figures

Journal ref: PhysRevB.107.245114 (2023)

Valley Hall Effect and Kink States in Topolectrical Circuits

Authors: S M Rafi-Ul-Islam, Zhuo Bin Siu, Haydar Sahin, Mansoor B. A. Jalil

Abstract: We investigate the emergence of topological valley Hall and kink states in a two-dimensional topolectrical (TE) model as a result of broken chiral and reflection symmetries. The TE system consists of two segments hosting distinct topological states with opposite signs of the valley Hall index, and separated by a heterojunction. In the practical circuit, the valley Hall index can be flipped between… ▽ More We investigate the emergence of topological valley Hall and kink states in a two-dimensional topolectrical (TE) model as a result of broken chiral and reflection symmetries. The TE system consists of two segments hosting distinct topological states with opposite signs of the valley Hall index, and separated by a heterojunction. In the practical circuit, the valley Hall index can be flipped between the two segments by modulating the onsite potential on the sublattice nodes of the respective segments. The presence of resistive coupling, which introduces non-Hermiticity in the system, subsequently leads to the emergence of gapped and gapless valley and kink states in the admittance spectra. These topological modes can be detected electrically by the impedance readouts of the system which can be correlated to its admittance spectra. Finally, we confirm the robustness of the valley Hall and kink states via realistic LTspice simulation taking into account the tolerance windows and parasitic effects inherent in circuit components. Our study demonstrates the applicability of TE circuit networks as a platform to realize and tune valley-dependent and kink topological phenomena. △ Less

Submitted 5 December, 2022; originally announced December 2022.

Comments: 11 pages, 7 figures

Semiclassical spin transport in LaO/STO system in the presence of multiple Rashba spin orbit couplings

Authors: Anirban Kundu, Zhuo Bin Siu, Jalil Mansoor B. A

Abstract: The interaction between the linear and cubic spin-orbit coupling with magnetic moments and mobile spin-polarized carriers in the LaO/STO system provides new avenues for spin transport applications. We study the interplay between linear and cubic Rashba spin orbit coupling (RSOC) on in-plane magnetic moments in the LaO/STO system using the Boltzmann transport theory based on the relaxation time app… ▽ More The interaction between the linear and cubic spin-orbit coupling with magnetic moments and mobile spin-polarized carriers in the LaO/STO system provides new avenues for spin transport applications. We study the interplay between linear and cubic Rashba spin orbit coupling (RSOC) on in-plane magnetic moments in the LaO/STO system using the Boltzmann transport theory based on the relaxation time approximation (RTA) and the more refined Schliemann-Loss (SL) delta-potential scattering model. In general, both methods yield a linear (quadratic) relationship between the spin accumulation (spin current) when one of the three RSOC strengths is varied and the other two fixed. The simultaneous presence of multiple types of RSOC with distinct angular dependences is a key ingredient in breaking the k-space symmetry of the Fermi surface, thus ensuring a finite spin accumulation upon integration over the entire Fermi surface. While the oft-used RTA method is sufficiently accurate for spin accumulation calculations, the more refined SL model is required for spin current calculations because the RTA method neglects the anisotropy of the Fermi contour arising from the cubic RSOC terms. Based on the refined SL model and under optimal tuning of the RSOC parameters, the spin charge conversion values in LaO/STO is predicted to reach a remarkable efficiency of 30. △ Less

Submitted 6 September, 2022; originally announced September 2022.

System size dependent topological zero modes in coupled topolectrical chains

Authors: S M Rafi-Ul-Islam, Zhuo Bin Siu, Haydar Sahin, Ching Hua Lee, Mansoor B. A. Jalil

Abstract: In this paper, we demonstrate the emergence and disappearance of topological zero modes (TZMs) in a coupled topolectrical (TE) circuit lattice. Specifically, we consider non-Hermitian TE chains in which TZMs do not occur in the individual uncoupled chains, but emerge when these chains are coupled by inter-chain capacitors. The coupled system hosts TZMs which show size-dependent behaviours and vani… ▽ More In this paper, we demonstrate the emergence and disappearance of topological zero modes (TZMs) in a coupled topolectrical (TE) circuit lattice. Specifically, we consider non-Hermitian TE chains in which TZMs do not occur in the individual uncoupled chains, but emerge when these chains are coupled by inter-chain capacitors. The coupled system hosts TZMs which show size-dependent behaviours and vanish beyond a certain critical size. In addition, the emergence or disappearance of the TZMs in the open boundary condition (OBC) spectra for a given size of the coupled system can be controlled by modulating the signs of its inverse decay length. Analytically, trivial and non-trivial phases of the coupled system can be distinguished by the differing ranks of their corresponding Laplacian matrix. The TE circuit framework enables the physical detection of the TZMs via electrical impedance measurements. Our work establishes the conditions for inducing TZMs and modulating their behavior in coupled TE chains. △ Less

Submitted 10 June, 2022; originally announced June 2022.

Comments: 9 Pages, 5 Figures

Anomalous fractal scaling in two-dimensional electric networks

Authors: Xiao Zhang, Boxue Zhang, Haydar Sahin, Zhuo Bin Siu, S. M. Rafi-Ul-Islam, Jian Feng Kong, Mansoor B. A. Jalil, Ronny Thomale, Ching Hua Lee

Abstract: Much of the qualitative nature of physical systems can be predicted from the way it scales with system size. Contrary to the continuum expectation, we observe a profound deviation from logarithmic scaling in the impedance of a two-dimensional $LC$ circuit network. We find this anomalous impedance contribution to sensitively depend on the number of nodes $N$ in a curious erratic manner, and experim… ▽ More Much of the qualitative nature of physical systems can be predicted from the way it scales with system size. Contrary to the continuum expectation, we observe a profound deviation from logarithmic scaling in the impedance of a two-dimensional $LC$ circuit network. We find this anomalous impedance contribution to sensitively depend on the number of nodes $N$ in a curious erratic manner, and experimentally demonstrate its robustness against perturbations from the contact and parasitic impedance of individual components. This impedance anomaly is traced back to a generalized resonance condition reminiscent of the Harper's equation for electronic lattice transport in a magnetic field, even though our circuit network does not involve magnetic translation symmetry. It exhibits an emergent fractal parametric structure of anomalous impedance peaks for different $N$ that cannot be reconciled with continuum theory and does not correspond to regular waveguide resonant behavior. This anomalous fractal scaling extends to the transport properties of generic systems described by a network Laplacian whenever a resonance frequency scale is simultaneously present. △ Less

Submitted 2 July, 2023; v1 submitted 11 April, 2022; originally announced April 2022.

Comments: 15 pages, 9 figures, 2 tables

Journal ref: Communications Physics 6(1):151 2023

Giant anisotropic photocurrent modulated by strain in type-II Weyl semimetal Td-MoTe2

Authors: Xinru Wang, Ying Ding, M. N. Chen, Z. B. Siu, Mansoor B. A. Jalil, Yuan Li

Abstract: We build a Cu-MoTe2-Cu device model and use first-principles density functional theory to study the transport properties of single-layer Td-MoTe2. We obtained the effect of strain on the energy band structure, transport properties, and photocurrent. The strain-induced photocurrent shows an anisotropy that reflects the modulation of the energy bands, including the Weyl point, by strain. The photocu… ▽ More We build a Cu-MoTe2-Cu device model and use first-principles density functional theory to study the transport properties of single-layer Td-MoTe2. We obtained the effect of strain on the energy band structure, transport properties, and photocurrent. The strain-induced photocurrent shows an anisotropy that reflects the modulation of the energy bands, including the Weyl point, by strain. The photocurrent can be suppressed to almost zero when the strain is applied along the vacuum direction. In contrast, the photocurrent can be significantly increased when the strain is applied along the transport direction. The transport properties and magnitude of the photocurrent in the MoTe2-based device can be effectively modulated by adjusting the strength and direction of the strain. △ Less

Submitted 20 November, 2021; originally announced November 2021.

Comments: 6 pages, 6 figures

Journal ref: Optics Letters Vol. 47, 906 (2022)

Valley-dependent transport in strain engineering graphene heterojunctions

Authors: Fei Wan, Xinru Wang, Liehong Liao, Jiayan Zhang, M. N. Chen, G. H. Zhou, Z. B. Siu, Mansoor B. A. Jalil, Yuan Li

Abstract: We study the effect of the strain on the band structure and the valley-dependent transport property of graphene heterojunctions. It is found that valley-dependent separation of electrons can be achieved by utilizing the strain and on-site energies. In the presence of the strain, the values of the transmission can be effectively adjusted by changing the strengths of the strain, while the transport… ▽ More We study the effect of the strain on the band structure and the valley-dependent transport property of graphene heterojunctions. It is found that valley-dependent separation of electrons can be achieved by utilizing the strain and on-site energies. In the presence of the strain, the values of the transmission can be effectively adjusted by changing the strengths of the strain, while the transport angle basically keeps unchanged. When an extra on-site energy is simultaneously applied to the central scattering region, not only are the electrons of valleys K and K' separated into two distinct transmission lobes in opposite transverse directions, but the transport angles of two valleys can be significantly changed. Therefore, one can realize an effective modulation of valley-dependent transport by changing the strength and stretch angle of the strain and on-site energies, which can be exploited for graphene-based valleytronics devices. △ Less

Submitted 1 October, 2021; originally announced October 2021.

Comments: 7 pages, 10 figures

Journal ref: Chin. Phys. B 31, 077302 (2022)

Strain-Modulated Graphene Heterostructure as a Valleytronic Current Switch

Authors: Maverick Chauwin, Zhuo Bin Siu, Mansoor Bin Abdul Jalil

Abstract: Strain engineering is a promising approach for suppressing the OFF-state conductance in graphene-based devices that arises from Klein tunnelling. In this work, we derive a comprehensive tight-binding Hamiltonian for strained graphene that incorporates strain-induced effects that have been neglected hitherto, such as the distortion of the unit cell under strain, the effect of strain on the next-nea… ▽ More Strain engineering is a promising approach for suppressing the OFF-state conductance in graphene-based devices that arises from Klein tunnelling. In this work, we derive a comprehensive tight-binding Hamiltonian for strained graphene that incorporates strain-induced effects that have been neglected hitherto, such as the distortion of the unit cell under strain, the effect of strain on the next-nearest neighbor coupling, and the second-order contributions of the strain tensor. We derive the corresponding low-energy effective Hamiltonian about the Dirac points and reformulate the boundary conditions at the interfaces between strained and unstrained graphene in light of additional terms in the Hamiltonian. By applying these boundary conditions, we evaluate the transmission across a strained graphene heterostructure consisting of a central segment sandwiched between two unstrained leads. Modulation of the transmitted current can be effected by varying the magnitude and direction of the applied strain, as well as by the applying a gate voltage. Based on realistic parameter values, we predict that high ON-OFF ratios of up to $10^{12}$ as well as high current valley polarization can be achieved in the strain-modulated device. △ Less

Submitted 24 August, 2021; originally announced August 2021.

Critical hybridization of skin modes in coupled non-Hermitian chains

Authors: S M Rafi-Ul-Islam, Zhuo Bin Siu, Haydar Sahin, Ching Hua Lee, Mansoor B. A. Jalil

Abstract: Non-Hermitian topological systems exhibit a plethora of unusual topological phenomena that are absent in the Hermitian systems. One of these key features is the extreme eigenstate localization of eigenstates, also known as non-Hermitian skin effect (NHSE), which occurs in open chains. However, many new and peculiar non-Hermitian characteristics of the eigenstates and eigenvlaues that emerge when t… ▽ More Non-Hermitian topological systems exhibit a plethora of unusual topological phenomena that are absent in the Hermitian systems. One of these key features is the extreme eigenstate localization of eigenstates, also known as non-Hermitian skin effect (NHSE), which occurs in open chains. However, many new and peculiar non-Hermitian characteristics of the eigenstates and eigenvlaues that emerge when two such non-Hermitian chains are coupled together remain largely unexplored. Here, we report various new avenues of eigenstate localization in coupled non-Hermitian chains with dissimilar inverse skin lengths in which the NHSE can be switched on and off by the inter-chain coupling amplitude. A very small inter-chain strength causes the NHSE to be present at both ends of an anti-symmetric coupled system because of the weak hybridization of the eigenstates of the individual chains. The eigenspectrum under open boundary conditions (OBC) exhibits a discontinuous jump known as the critical NHSE (CNHSE) as its size increases. However, when the hybridization between eigenstates becomes significant in a system with strong inter-chain coupling, the NHSE and CNHSE vanish. Moreover, a peculiar "half-half skin localization" occurs in composite chains with opposite signs of inverse decay lengths, where half of the eigenstates are exponentially localized at one chain and the remainder of the eigenstates on the other chain. Our results provide a new twist and insights for non-Hermitian phenomena in coupled non-Hermitian systems. △ Less

Submitted 5 August, 2021; originally announced August 2021.

Comments: 18 pages, 11 figures

Unconventional node voltage accumulation in generalized topolectrical circuits with multiple asymmetric couplings

Authors: S M Rafi-Ul-Islam, Zhuo Bin Siu, Haydar Sahin, Ching Hua Lee, Mansoor B. A. Jalil

Abstract: A non-Hermitian system is characterized by the violation of energy conservation. As a result of unbalanced gain or loss in the forward and backward directions due to non-reciprocal couplings, the eigenmodes of such systems exhibit extreme localization, also known as non-Hermitian skin effect (NHSE). This work explores unconventional scenarios where the interplay of multiple asymmetric couplings ca… ▽ More A non-Hermitian system is characterized by the violation of energy conservation. As a result of unbalanced gain or loss in the forward and backward directions due to non-reciprocal couplings, the eigenmodes of such systems exhibit extreme localization, also known as non-Hermitian skin effect (NHSE). This work explores unconventional scenarios where the interplay of multiple asymmetric couplings can cause the NHSE to vanish, with the admittance spectra taking identical dispersion under open boundary conditions (OBC) and periodic boundary conditions (PBC). This is unlike known non-Hermitian models where the NHSE vanishes only when the non-Hermiticity is turned off. We derive general conditions for the NHSE, with the overall eigenmode localization determined by the geometric mean of the cumulative contributions of all asymmetric coupling segments. In the limit of large unit cells, our results provide a route towards the NHSE caused by asymmetric hop** textures, rather than single asymmetric hop**s alone. Furthermore, our generalized model can be transformed into a square-root lattice simply by tuning the coupling capacitors, where the topological edge states occur at a non-zero admittance, in contrast to the zero-admittance states of conventional topological insulators. We provide explicit electrical circuit setups for realizing our observations, which also extend to other established platforms such as photonics, mechanics, optics and quantum circuits. △ Less

Submitted 3 August, 2021; originally announced August 2021.

Comments: 12 pages, 5 figures

Higher Chern Number States in Curved Periodic Nanowires

Authors: Zhuo Bin Siu, Seng Ghee Tan, Mansoor B. A. Jalil

Abstract: The coupling between the spin and momentum degrees of freedom due to spin-orbit interactions (SOI) suggests that the strength of the latter can be modified by controlling the motion of the charge carriers. In this paper, we investigate how the effective SOI can be modulated by constraining the motion of charge carriers to curved waveguides thereby introducing real-space geometric curvature in thei… ▽ More The coupling between the spin and momentum degrees of freedom due to spin-orbit interactions (SOI) suggests that the strength of the latter can be modified by controlling the motion of the charge carriers. In this paper, we investigate how the effective SOI can be modulated by constraining the motion of charge carriers to curved waveguides thereby introducing real-space geometric curvature in their motion. The change in the SOI can in turn induce topological phase transitions in the system. Specifically, we study how the introduction of periodic sinusoidal curvature in nanowires with intrinsic SOC can induce the onset of mid-gap topologically protected edge states, which can be characterized by a topological invariant or Chern number. The Chern number corresponds to the number of discrete charges that would be pumped across the length of the nanowire when the phase of a sliding gate potential relative to that of the sinusoidal curvature is varied adiabatically over a complete period. In addition, coupling to an external magnetization can be utilized as an experimental knob to modify the Chern number by changing the ordering of the nanowire energy bands. The magnetization can be tuned to achieve large discrete jumps in the number of pump charges per phase period. △ Less

Submitted 31 August, 2021; v1 submitted 20 July, 2021; originally announced July 2021.

Non-Hermitian topological phases and exceptional lines in topolectrical circuits

Authors: S M Rafi-Ul-Islam, Zhuo Bin Siu, Mansoor B. A. Jalil

Abstract: We propose a scheme to realize various non-Hermitian topological phases in a topolectrical (TE) circuit network consisting of resistors, inductors, and capacitors. These phases are characterized by topologically protected exceptional points and lines. The positive and negative resistive couplings Rg in the circuit provide loss and gain factors which break the Hermiticity of the circuit Laplacian.… ▽ More We propose a scheme to realize various non-Hermitian topological phases in a topolectrical (TE) circuit network consisting of resistors, inductors, and capacitors. These phases are characterized by topologically protected exceptional points and lines. The positive and negative resistive couplings Rg in the circuit provide loss and gain factors which break the Hermiticity of the circuit Laplacian. By controlling Rg, the exceptional lines of the circuit can be modulated, e.g., from open curves to closed ellipses in the Brillouin zone. In practice, the topology of the exceptional lines can be detected by the impedance spectra of the circuit. We also considered finite TE systems with open boundary conditions, the admittance spectrum of which exhibits highly tunable zero-admittance states demarcated by boundary points (BPs). The phase diagram of the system shows topological phases which are characterized by the number of their BPs. The transition between different phases can be controlled by varying the circuit parameters and tracked via impedance readout between the terminal nodes. Our TE model offers an accessible and tunable means of realizing different topological phases in a non-Hermitian framework, and characterizing them based on their boundary point and exceptional line configurations. △ Less

Submitted 7 February, 2021; originally announced February 2021.

Zitterbewegung-mediated RKKY coupling in topological insulator thin films

Authors: Cong Son Ho, Zhuo Bin Siu, Seng Ghee Tan, Mansoor B. A. Jalil

Abstract: The dynamics of itinerant electrons in topological insulator (TI) thin films is investigated using a multi-band decomposition approach. We show that the electron trajectory in the 2D film is anisotropic and confined within a characteristic region. Remarkably, the confinement and anisotropy of the electron trajectory are associated with the topological phase transition of the TI system, which can b… ▽ More The dynamics of itinerant electrons in topological insulator (TI) thin films is investigated using a multi-band decomposition approach. We show that the electron trajectory in the 2D film is anisotropic and confined within a characteristic region. Remarkably, the confinement and anisotropy of the electron trajectory are associated with the topological phase transition of the TI system, which can be controlled by tuning the film thickness and/or applying an in-plane magnetic field. Moreover, persistent electron wavepacket oscillation can be achieved in the TI thin film system at the phase transition point, which may assist in the experimental detection of the jitter motion (Zitterbewegung). The implications of the microscopic picture of electron motion in explaining other transport-related effects, e.g., electron-mediated RKKY coupling in the TI thin film system, are also discussed. △ Less

Submitted 16 June, 2020; originally announced June 2020.

Journal ref: New Journal of Physics (2020)

Controllable p$-$n junctions in three$-$dimensional Dirac semimetal Cd$_3$As$_2$ nanowires

Authors: Janice Ruth Bayogan, Kidong Park, Zhuo Bin Siu, Sung ** An, Chiu-Chun Tang, Xiao-Xiao Zhang, Man Suk Song, Jeunghee Park, Mansoor B. A. Jalil, Naoto Nagaosa, Kazuhiko Hirakawa, Christian Schönenberger, Jungpil Seo, Minkyung Jung

Abstract: We demonstrate a controllable p$-$n junction in a three$-$dimensional Dirac semimetal (DSM) Cd$_3$As$_2$ nanowire with two recessed bottom gates. The device exhibits four different conductance regimes with gate voltages, the unipolar (n$-$n and p$-$p) regime and the bipolar (n$-$p and n$-$p) one, where p$-$n junctions are formed. The conductance in the p$-$n junction regime decreases drastically w… ▽ More We demonstrate a controllable p$-$n junction in a three$-$dimensional Dirac semimetal (DSM) Cd$_3$As$_2$ nanowire with two recessed bottom gates. The device exhibits four different conductance regimes with gate voltages, the unipolar (n$-$n and p$-$p) regime and the bipolar (n$-$p and n$-$p) one, where p$-$n junctions are formed. The conductance in the p$-$n junction regime decreases drastically when a magnetic field is applied perpendicular to the nanowire, which is due to the suppression of Klein tunneling. In this regime, the device shows quantum dot behavior. On the other hand, clear conductance plateaus are observed in the n$-$n regime likely owing to the cyclotron motion of carriers at high magnetic fields. Our experiment shows that the ambipolar tunability of DSM nanowires can enable the realization of quantum devices based on quantum dots and electron optics. △ Less

Submitted 10 September, 2019; originally announced September 2019.

Journal ref: Nanotechnology 31, 205001 (2020)

Transport across a topoelectrical Weyl semimetal heterojunction

Authors: S M Rafi-Ul-Islam, Zhuo Bin Siu, Mansoor B. A. Jalil

Abstract: We propose a general method to realize and calculate the transmission in a Weyl semimetal (WSM) heterostructure by employing a periodic three-dimensional topoelectrical (TE) circuit network. By drawing the analogy between inductor-capacitor circuit lattices and quantum mechanical tight-binding (TB) models, we show that the energy flux in a TE network is analogous to the probability flux in a TB Ha… ▽ More We propose a general method to realize and calculate the transmission in a Weyl semimetal (WSM) heterostructure by employing a periodic three-dimensional topoelectrical (TE) circuit network. By drawing the analogy between inductor-capacitor circuit lattices and quantum mechanical tight-binding (TB) models, we show that the energy flux in a TE network is analogous to the probability flux in a TB Hamiltonian. TE systems offer a key advantage in that they can be easily tuned to achieve different topological WSM phases simply by varying the capacitances and inductances. The above analogy opens the way to the study of tunneling across heterojunctions separating different types of WSMs in TE circuits, a situation which is virtually impossible to realize in physical WSM materials. We show that the energy flux transmission in a WSM heterostructure depends highly on the relative orientation of the transport direction and the $k$-space tilt direction. For the transmission from a Type I WSM source lead to a Type II WSM drain lead, all valleys transmit equally when the tilt and transmission directions are perpendicular to each other. In contrast, large inter-valley scattering is required for transmission when the tilt and transport directions are parallel to each other, leading to valley-dependent transmission. We describe a Type III WSM phase intermediate between the Type I and Type II phases. An `anti-Klein' tunneling occurs between a Type I source and Type III drain where the transmission is totally suppressed for some valleys at normal incidence. This is in direct contrast to the usual Klein tunneling in Dirac materials where normally incident flux is perfectly transmitted. Owing to the ease of fabrication and experimental accessibility, TE circuits offer an excellent testbed to study the extraordinary transport phenomena in WSM based heterostructures. △ Less

Submitted 9 August, 2019; originally announced August 2019.

Quantum dots formed in three-dimensional Dirac semimetal Cd$_3$As$_2$ nanowires

Authors: Minkyung Jung, Kenji Yoshida, Kidong Park, Xiao-Xiao Zhang, Can Yesilyurt, Zhuo Bin Siu, Mansoor B. A. Jalil, **wan Park, Jeunghee Park, Naoto Nagaosa, Jungpil Seo, Kazuhiko Hirakawa

Abstract: We demonstrate quantum dot (QD) formation in three-dimensional Dirac semimetal Cd$_{3}$As$_{2}$ nanowires using two electrostatically tuned p$-$n junctions with a gate and magnetic fields. The linear conductance measured as a function of gate voltage under high magnetic fields is strongly suppressed at the Dirac point close to zero conductance, showing strong conductance oscillations. Remarkably,… ▽ More We demonstrate quantum dot (QD) formation in three-dimensional Dirac semimetal Cd$_{3}$As$_{2}$ nanowires using two electrostatically tuned p$-$n junctions with a gate and magnetic fields. The linear conductance measured as a function of gate voltage under high magnetic fields is strongly suppressed at the Dirac point close to zero conductance, showing strong conductance oscillations. Remarkably, in this regime, the Cd$_{3}$As$_{2}$ nanowire device exhibits Coulomb diamond features, indicating that a clean single QD forms in the Dirac semimetal nanowire. Our results show that a p$-$type QD can be formed between two n$-$type leads underneath metal contacts in the nanowire by applying gate voltages under strong magnetic fields. Analysis of the quantum confinement in the gapless band structure confirms that p$-$n junctions formed between the p$-$type QD and two neighboring n$-$type leads under high magnetic fields behave as resistive tunnel barriers due to cyclotron motion, resulting in the suppression of Klein tunneling. The p$-$type QD with magnetic field-induced confinement shows a single hole filling. Our results will open up a route to quantum devices such as QDs or quantum point contacts based on Dirac and Weyl semimetals. △ Less

Submitted 16 December, 2018; originally announced December 2018.

Effect of cap** layer on spin-orbit torques

Authors: Chi Sun, Zhuo Bin Siu, Seng Ghee Tan, Hyunsoo Yang, Mansoor B. A. Jalil

Abstract: In order to enhance the magnitude of spin-orbit torque (SOT), considerable experimental works have been devoted to studying the thickness dependence of the different layers in multilayers consisting of heavy metal (HM), ferromagnet (FM) and cap** layers. Here we present a theoretical model based on the spin-drift-diffusion (SDD) formalism to investigate the effect of the cap** layer properties… ▽ More In order to enhance the magnitude of spin-orbit torque (SOT), considerable experimental works have been devoted to studying the thickness dependence of the different layers in multilayers consisting of heavy metal (HM), ferromagnet (FM) and cap** layers. Here we present a theoretical model based on the spin-drift-diffusion (SDD) formalism to investigate the effect of the cap** layer properties such as its thickness on the SOT observed in experiments. It is found that the spin Hall-induced SOT can be significantly enhanced by incorporating a cap** layer with opposite spin Hall angle to that of the HM layer. The spin Hall torque can be maximized by tuning the cap** layer thickness. However, in the absence of the spin Hall effect (SHE) in the cap** layer, the torque decreases monotonically with cap** layer thickness. Conversely, the spin Hall torque is found to decrease monotonically with the FM layer thickness, irrespective of the presence or absence of SHE in the cap** layer. All these trends are in correspondence with experimental observations. Finally, our model suggests that cap** layers with long spin diffusion length and high resistivity would also enhance the spin Hall torque. △ Less

Submitted 19 April, 2018; originally announced April 2018.

Strain-controlled valley and spin separation in silicene heterojunctions

Authors: Yuan Li, H. B. Zhu, G. Q. Wang, Y. Z. Peng, J. R. Xu, Z. H. Qian, R. Bai, G. H. Zhou, C. Yesilyurt, Z. B. Siu, M. B. A. Jalil

Abstract: We adopt the tight-binding mode-matching method to study the strain effect on silicene heterojunctions. It is found that valley- and spin-dependent separation of electrons cannot be achieved by the electric field only. When a strain and an electric field are simultaneously applied to the central scattering region, not only are the electrons of valleys K and K' separated into two distinct transmiss… ▽ More We adopt the tight-binding mode-matching method to study the strain effect on silicene heterojunctions. It is found that valley- and spin-dependent separation of electrons cannot be achieved by the electric field only. When a strain and an electric field are simultaneously applied to the central scattering region, not only are the electrons of valleys K and K' separated into two distinct transmission lobes in opposite transverse directions, but the up-spin and down-spin electrons will also move in the two opposite transverse directions. Therefore, one can realize an effective modulation of valley- and spin-dependent transport by changing the amplitude and the stretch direction of the strain. The phenomenon of the strain-induced valley and spin deflection can be exploited for silicene-based valleytronics devices. △ Less

Submitted 28 June, 2018; v1 submitted 8 July, 2017; originally announced July 2017.

Comments: 6 pages, 6 figures

Journal ref: Phys. Rev. B 97, 085427 (2018)

Electrically tunable valley polarization in Weyl semimetals with tilted energy dispersion

Authors: Can Yesilyurt, Zhuo Bin Siu, Seng Ghee Tan, Gengchiau Liang, Shengyuan A. Yang, Mansoor B. A. Jalil

Abstract: Tunneling transport across the p-n-p junction of Weyl semimetal with tilted energy dispersion is investigated. We report that the electrons around different valleys experience opposite direction refractions at the barrier interface when the energy dispersion is tilted along one of the transverse directions. Chirality dependent refractions at the barrier interface polarize the Weyl fermions in angl… ▽ More Tunneling transport across the p-n-p junction of Weyl semimetal with tilted energy dispersion is investigated. We report that the electrons around different valleys experience opposite direction refractions at the barrier interface when the energy dispersion is tilted along one of the transverse directions. Chirality dependent refractions at the barrier interface polarize the Weyl fermions in angle-space according to their valley index. A real magnetic barrier configuration is used to select allowed transmission angles, which results in electrically controllable and switchable valley polarization. Our findings may pave the way for experimental investigation of valley polarization, as well as valleytronic and electron optic applications in Weyl semimetals. △ Less

Submitted 9 February, 2018; v1 submitted 19 May, 2017; originally announced May 2017.

Adiabatic approximation for a uniform DC electric field

Authors: Zhuo Bin Siu, Mansoor B. A. Jalil, Seng Ghee Tan

Abstract: In this work, we show that the disorder-free Kubo formula for the non-equilibrium value of an observable due to a DC electric field, represented by $E_x\hat{x}$ in the Hamiltonian, can be interpreted as the standard time-independent theory response of the observable due to a time- and position-\textit{independent} perturbation $H_{MF}$. We derive the explicit expression for $H_{MF}$ and show that… ▽ More In this work, we show that the disorder-free Kubo formula for the non-equilibrium value of an observable due to a DC electric field, represented by $E_x\hat{x}$ in the Hamiltonian, can be interpreted as the standard time-independent theory response of the observable due to a time- and position-\textit{independent} perturbation $H_{MF}$. We derive the explicit expression for $H_{MF}$ and show that it originates from the adiabatic approximation to $\langle k|E_x\hat{x}$ in which transitions between the different eigenspinor states of a system are forbidden. The expression for $H_{MF}$ is generalized beyond the real spin degree of freedom to include other spin-like discrete degrees of freedom (e.g. valley and pseudospin). By direct comparison between Kubo formula and the time-independent perturbation theory, as well as the Sundaram-Niu wavepacket formalism, we show that $H_{MF}$ reproduces the effect of the E-field, i.e. $E_x\hat{x}$, up to the first order. This replacement suggests the emergence of a new spin current term that is not captured by the standard Kubo formula spin current calculation. We illustrate this via the exemplary spin current for the heavy hole spin 3/2 Luttinger system. Finally, we apply the formalism and derive an analogous $H_{MF}$ for the effects of a weakly position-dependent coupling to the spin-like internal degrees of freedom. This gives rise to an anomalous velocity as well as spin accumulation terms in spin$\otimes$pseudospin space in addition to those contained explicitly in the unperturbed Hamiltonian. △ Less

Submitted 29 December, 2016; originally announced December 2016.

Journal ref: Phys. Rev. A 97, 022101 (2018)

Effect of surface state hybridization on current-induced spin-orbit torque in thin topological insulator films

Authors: Cong Son Ho, Yi Wang, Zhuo Bin Siu, Hyunsoo Yang, Seng Ghee Tan, Mansoor B. A. Jalil

Abstract: We investigate the current-induced spin-orbit torque in thin topological insulator (TI) films in the presence of hybridization between the top and bottom surface states. We formulate the relation between spin torque and TI thickness, from which we derived the optimal value of the thickness to maximize the torque. We show numerically that in typical TI thin films made of $\mathrm{Bi_2Se_3}$, the op… ▽ More We investigate the current-induced spin-orbit torque in thin topological insulator (TI) films in the presence of hybridization between the top and bottom surface states. We formulate the relation between spin torque and TI thickness, from which we derived the optimal value of the thickness to maximize the torque. We show numerically that in typical TI thin films made of $\mathrm{Bi_2Se_3}$, the optimal thickness is about 3-5 nm. △ Less

Submitted 5 December, 2016; v1 submitted 24 November, 2016; originally announced November 2016.

Comments: 5 pages, 2 figures

Journal ref: Scientific Reports 7, 792 (2017)

Spin accumulation in disordered topological insulator thin films

Authors: Zhuo Bin Siu, Ho Cong Son, Mansoor bin Abdul Jalil, Seng Ghee Tan

Abstract: Topological insulator (TI) thin films differ from the more commonly studied semi-infinite bulk TIs in that the former possesses both top and bottom surfaces where the surface states localized at different surfaces can couple to one another due to the finite thickness of the film. In the presence of an in-plane mangnetization TI thin films display two distinct phases depending on which of the inter… ▽ More Topological insulator (TI) thin films differ from the more commonly studied semi-infinite bulk TIs in that the former possesses both top and bottom surfaces where the surface states localized at different surfaces can couple to one another due to the finite thickness of the film. In the presence of an in-plane mangnetization TI thin films display two distinct phases depending on which of the inter-surface coupling or the magnetization is stronger. In this work, we consider a TI thin film system with an in-plane magnetization and calculate numerically the resulting spin accumulation on both surfaces of the film due to an in-plane electric field to linear order. We describe a numerical scheme for performing the Kubo calculation calculation in which we include impurity scattering and vertex corrections. We find that the sums of the spin accumulation over the two surfaces in the in-plane direction perpendicular to the magnetization, and in the out of plane direction, are antisymmetric in Fermi energy about the charge neutrality point and are non-vanishing only when the symmetry between the top and bottom TI surfaces is broken. The impurity scattering, in general, diminishes the magnitude of the spin accumulation and can also change the sign of the spin accumulation at some Fermi energies where the accumulation is small. △ Less

Submitted 9 September, 2016; v1 submitted 7 September, 2016; originally announced September 2016.

Quantum Capacitance of a Topological Insulator-Ferromagnet Interface

Authors: Zhuo Bin Siu, Debashree Chowdhury, Mansoor B. A. Jalil, Banasri Basu

Abstract: We study the quantum capacitance in a topological insulator thin film system magnetized in the in-plane direction in the presence of an out-of-plane magnetic field and hexagonal war**. To first order, the modification in quantum capacitance due to hexagonal war** compared to the clean case, where both the in-plane magnetization and hexagonal war** are absent, is always negative, and increase… ▽ More We study the quantum capacitance in a topological insulator thin film system magnetized in the in-plane direction in the presence of an out-of-plane magnetic field and hexagonal war**. To first order, the modification in quantum capacitance due to hexagonal war** compared to the clean case, where both the in-plane magnetization and hexagonal war** are absent, is always negative, and increases in magnitude monotonically with the energy difference from the charge neutrality point. In contrast, the change in the quantum capacitance due to in-plane magnetization oscillates with the energy in general, except when a certain relation between the inter-surface coupling, out of plane Zeeman energy splitting and magnetic field strength is satisfied. In this special case, the quantum capacitance remains unchanged by the in-plane magnetization for all energies. △ Less

Submitted 15 February, 2017; v1 submitted 15 August, 2016; originally announced August 2016.

Comments: 10 pages, 4 figures, Accepted for publication in Scientific Reports

Journal ref: Sci. Rep. 7, 45016,(2017)

Effective Hamiltonian for surface states of topological insulator nanotubes

Authors: Zhuo Bin Siu, Mansoor B. A. Jalil, Seng Ghee Tan

Abstract: In this work we derive an effective Hamiltonian for the surface states of a hollow topological insulator (TI) nanotube with finite width walls. Unlike a solid TI cylinder, a TI nanotube possesses both an inner as well as outer surface on which the states localized at each surface are coupled together. The curvature along the circumference of the nanotube leads to a spatial variation of the spin or… ▽ More In this work we derive an effective Hamiltonian for the surface states of a hollow topological insulator (TI) nanotube with finite width walls. Unlike a solid TI cylinder, a TI nanotube possesses both an inner as well as outer surface on which the states localized at each surface are coupled together. The curvature along the circumference of the nanotube leads to a spatial variation of the spin orbit interaction field experienced by the charge carriers as well as an asymmetry between the inner and outer surfaces of the nanotube. Both of these features result in terms in the effective Hamiltonian for a TI nanotube absent in that of a flat TI thin film of the same thickness. We calculate the numerical values of the parameters for a \ce{Bi2Se3} nanotube as a function of the inner and outer radius, and show that the differing relative magnitudes between the parameters result in qualitatively differing behaviour for the eigenstates of tubes of different dimensions. △ Less

Submitted 26 July, 2016; originally announced July 2016.

Spin accumulation in asymmetric topological insulator thin films in out of plane magnetic fields

Authors: Zhuo Bin Siu, Debashree Chowdhury, Banasri Basu, Mansoor B. A. Jalil

Abstract: In this work we study the spin accumulation due to an in-plane electric field in an asymmetric topological insulator (TI) thin film system with an out of plane magnetic field and an in-plane magnetization. A TI thin film differs from the more typically studied thick TI system in that the former has both a top and a bottom surface where the states localized at both surfaces can couple to each other… ▽ More In this work we study the spin accumulation due to an in-plane electric field in an asymmetric topological insulator (TI) thin film system with an out of plane magnetic field and an in-plane magnetization. A TI thin film differs from the more typically studied thick TI system in that the former has both a top and a bottom surface where the states localized at both surfaces can couple to each other due to the finite thickness. In typical spin torque experiments on TI thin film systems, the top and bottom surfaces of the film are asymmetric as the former is in contact with a ferromagnetic layer while the latter is adjacent to a non magnetic substrate. This may lead to differing (i) potentials and (ii) magnetization strengths experienced by the top and bottom surface states. We show, via Kubo formula calculations, that each of these two effects can lead to in-plane spin accumulation perpendicular to the magnetization direction which are otherwise absent in a top-bottom symmetric TI thin film system. This spin accumulation results from the breaking of the antisymmetry of the spin accumulation around the zero magnetic field equal energy contours. △ Less

Submitted 8 July, 2016; originally announced July 2016.

Journal ref: J. Phys. D: Appl. Phys. 50, 325306 , (2017)

Influence of Fermi arc states and double Weyl node on tunneling in a Dirac semimetal

Authors: Zhuo Bin Siu, Can Yesilyurt, Mansoor B. A. Jalil, Seng Ghee Tan

Abstract: Most theoretical studies of tunneling in Dirac and the closely related Weyl semimetals have modeled these materials as single Weyl nodes described by the three-dimensional Dirac equation $H = v_f \vec{p}\cdot\vecσ$. The influence of scattering between the different valleys centered around different Weyl nodes, and the Fermi arc states which connect these nodes are hence not evident from these stud… ▽ More Most theoretical studies of tunneling in Dirac and the closely related Weyl semimetals have modeled these materials as single Weyl nodes described by the three-dimensional Dirac equation $H = v_f \vec{p}\cdot\vecσ$. The influence of scattering between the different valleys centered around different Weyl nodes, and the Fermi arc states which connect these nodes are hence not evident from these studies. In this work we study the tunneling in a thin film system of the Dirac semimetal $\text{Na}_3\text{Bi}$ consisting of a central segment with a gate potential, sandwiched between identical semi-infinite source and drain segments. The model Hamiltonian we use for $\text{Na}_3\text{Bi}$ gives, for each spin, two Weyl nodes separated in $k$-space symmetrically about $k_z=0$. The presence of a top and bottom surface in the thin film geometry results in the appearance of Fermi arc states and energy subbands. We show that (for each spin) the presence of two Weyl nodes and the Fermi arc states result in enhanced transmission oscillations, and finite transmission even when the energy falls within the \textit{bulk} band gap in the central segment respectively. These features are not evident in single Weyl node models. △ Less

Submitted 28 June, 2016; originally announced June 2016.

Gauge field in systems with spin orbit interactions and additional discrete degrees of freedom to real spin

Authors: Zhuo Bin Siu, Mansoor B. A. Jalil, Seng Ghee Tan

Abstract: The spin gauge field formalism has been used to explain the emergence of out of plane spin accumulation in two-dimensional spin orbit interaction (SOI) systems in the presence of an in-plane electric field. The adiabatic alignment of the charge carrier spins to the momentum dependent SOI field, which changes in time due to the electric field, can be mathematically captured by the addition of a gau… ▽ More The spin gauge field formalism has been used to explain the emergence of out of plane spin accumulation in two-dimensional spin orbit interaction (SOI) systems in the presence of an in-plane electric field. The adiabatic alignment of the charge carrier spins to the momentum dependent SOI field, which changes in time due to the electric field, can be mathematically captured by the addition of a gauge term in the Hamiltonian. This gauge term acts like an effective, electric field dependent magnetization. In this work we show that this effective magnetization can be generalized to systems which include additional discrete degrees of freedom to real spin, such as the pseudospin and/or valley degrees of freedom in emerging materials like molybdenum sulphide and silicene. We show that the generalized magnetization recovers key results from the Sundaram-Niu formalism as well as from the Kubo formula. We then use the generalized magnetization to study the exemplary system of a topological insulator thin film system where the presence of both a top as well as a bottom surface provides an additional discrete degree of freedom in addition to the real spin. △ Less

Submitted 29 December, 2016; v1 submitted 13 June, 2016; originally announced June 2016.

Comments: The first half of this article dealing with the derivation of the effective magnetization has been superseded by arXiv:1612.09102

Curvature induced out of plane spin accumulation

Authors: Zhuo Bin Siu, Mansoor B. A. Jalil, Seng Ghee Tan

Abstract: In this work we show that (real space) curvature in the geometry of curved waveguides with Rashba spin orbit interaction (RSOI) can lead to out of plane spin accumulations. We first derive the RSOI Hamiltonian on arbitrarily curved surfaces. We then analyze the effects of curvature with two distinct methods. We first apply an adiabatic approximation on gently curved, planar waveguides lying flat o… ▽ More In this work we show that (real space) curvature in the geometry of curved waveguides with Rashba spin orbit interaction (RSOI) can lead to out of plane spin accumulations. We first derive the RSOI Hamiltonian on arbitrarily curved surfaces. We then analyze the effects of curvature with two distinct methods. We first apply an adiabatic approximation on gently curved, planar waveguides lying flat on the $xy$ plane to show that analogous to the acceleration of the charge carriers by an electric field, the change in momentum direction of the charge carriers as they move along the waveguide leads to an out of plane spin accumulation. We then use the Heisenberg equations of motion to establish the relationships between spin currents and accumulations on non-planar waveguides. These relations predict the existence of out of plane spin accumulation on asymmetrically curved, non-planar waveguides. We finally solve for the eigenstates on such waveguides numerically, and present numerical results to verify our earlier analytic predictions. △ Less

Submitted 18 February, 2016; originally announced February 2016.

Dirac semimetal thin films in in-plane magnetic fields

Authors: Zhuo Bin Siu, Mansoor B. A. Jalil, Seng Ghee Tan

Abstract: In this work we study the effects of in-plane magnetic fields on thin films of the Dirac Semimetal (DSM) \ce{Na2Bi} where one of the in-plane directions is perpendicular to the $k$-separation between the two Weyl points for each spin orientation. We show numerically that the states localized near the surface of these thin films are related to the Fermi arc states in semi-infinite slabs. Due to the… ▽ More In this work we study the effects of in-plane magnetic fields on thin films of the Dirac Semimetal (DSM) \ce{Na2Bi} where one of the in-plane directions is perpendicular to the $k$-separation between the two Weyl points for each spin orientation. We show numerically that the states localized near the surface of these thin films are related to the Fermi arc states in semi-infinite slabs. Due to the anisotropy between the two in-plane directions, the application of a magnetic field along these directions have differing effects. A field parallel to the $k$ space separation between the Weyl points leads to a broadening of the surface state band and a formation of an energy plateau, while a perpendicular field shifts the energy where the hole and particle bands meet upwards and sharpens the tips of the bands. We illustrate the effects of these changes to the bandstructure by studying the transmission from a source segment without a magnetic field to a drain segment with a field with the field and interface at various in-plane directions. △ Less

Submitted 18 June, 2016; v1 submitted 21 January, 2016; originally announced January 2016.

Effective Hamiltonian for surface states of \ce{Bi2Te3} nanocylinders with hexagonal war**

Authors: Zhuo Bin Siu, Mansoor B. A. Jalil, Seng Ghee Tan

Abstract: The three-dimensional topological insulator \ce{Bi2Te3} differs from other topological insulators in the \ce{Bi2Se3} family in that the effective Hamiltonian of its surface states on a flat semi-infinite slab requires the addition of a cubic momentum hexagonal war** term in order to reproduce the experimentally measured constant energy contours. In this work, we derive the appropriate effective… ▽ More The three-dimensional topological insulator \ce{Bi2Te3} differs from other topological insulators in the \ce{Bi2Se3} family in that the effective Hamiltonian of its surface states on a flat semi-infinite slab requires the addition of a cubic momentum hexagonal war** term in order to reproduce the experimentally measured constant energy contours. In this work, we derive the appropriate effective Hamiltonian for the surface states of a \ce{Bi2Te3} \textit{cylinder} incorporating the corresponding hexagonal war** terms in a cylindrical geometry. We show that at the energy range where the surface states dominate, the effective Hamiltonian adequately reproduces the dispersion relation obtained from a full four-band Hamiltonian, which describe both the bulk and surface states. As an example application of our effective Hamiltonian, we study the transmission between two collinear \ce{Bi2Te3} cylinders magnetized in different directions perpendicular to their axes. We show that the hexagonal war** term results in a transmission profile between the cylinders which may be of utility in a multiple state magnetic memory bit. △ Less

Submitted 19 January, 2016; originally announced January 2016.