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Thermoelectric transport in molecular crystals driven by gradients of thermal electronic disorder
Authors:
Jan Elsner,
Yucheng Xu,
Elliot D. Goldberg,
Filip Ivanovic,
Aaron Dines,
Samuele Giannini,
Henning Sirringhaus,
Jochen Blumberger
Abstract:
Thermoelectric materials convert a temperature gradient into a voltage. This phenomenon is relatively well understood for inorganic materials, but much less so for organic semiconductors (OSs). These materials present a challenge because the strong thermal fluctuations of electronic coupling between the molecules result in partially delocalized charge carriers that cannot be treated with tradition…
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Thermoelectric materials convert a temperature gradient into a voltage. This phenomenon is relatively well understood for inorganic materials, but much less so for organic semiconductors (OSs). These materials present a challenge because the strong thermal fluctuations of electronic coupling between the molecules result in partially delocalized charge carriers that cannot be treated with traditional theories for thermoelectricity. Here we develop a novel quantum dynamical simulation approach revealing in atomistic detail how the charge carrier wavefunction moves along a temperature gradient in an organic molecular crystal. We find that the wavefunction propagates from hot to cold in agreement with experiment and we obtain a Seebeck coefficient in good agreement with values obtained from experimental measurements that are also reported in this work. Detailed analysis of the dynamics reveals that the directional charge carrier motion is due to the gradient in thermal electronic disorder, more specifically in the spatial gradient of thermal fluctuations of electronic couplings. It causes an increase in the density of thermally accessible electronic states, the delocalization of states and the non-adiabatic coupling between states with decreasing temperature. As a result, the carrier wavefunction transitions with higher probability to a neighbouring electronic state towards the cold side compared to the hot side generating a thermoelectric current. Our dynamical perspective of thermoelectricity suggests that the temperature dependence of electronic disorder plays an important role in determining the magnitude of the Seebeck coefficient in this class of materials, opening new avenues for design of OSs with improved Seebeck coefficients.
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Submitted 26 June, 2024;
originally announced June 2024.
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Detection of spin pum** free of rectification and thermal artefacts in molecular-based ferromagnetic insulator V[TCNE]x~2
Authors:
Zichen Wang,
Seth Kurfman,
Sarah Ursel,
E. Johnston-Halperin,
Henning Sirringhaus
Abstract:
The molecular-based ferrimagnetic insulator V(TCNE)x has gained recent interest for efficient spin-wave excitation due to its low Gilbert dam** ratio a=4E-5, and narrow ferromagnetic resonance linewidth f=1Oe. Here we report a clean spin pum** signal detected on V(TCNE)x/metal bilayer structures, free from spin rectification or thermal artifacts. On-chip coupling of microwave power is achieved…
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The molecular-based ferrimagnetic insulator V(TCNE)x has gained recent interest for efficient spin-wave excitation due to its low Gilbert dam** ratio a=4E-5, and narrow ferromagnetic resonance linewidth f=1Oe. Here we report a clean spin pum** signal detected on V(TCNE)x/metal bilayer structures, free from spin rectification or thermal artifacts. On-chip coupling of microwave power is achieved via a coplanar waveguide to measure the in-plane angle-dependence of the inverse spin-Hall effect under ferromagnetic resonance conditions with respect to a constant external magnetic field. A signature of pure spin current from V(TCNE)x is observed in both platinum and permalloy metal layers, demonstrating the utility of V(TCNE)x for magnon spintronics studies in molecule/solid-state heterostructures.
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Submitted 28 March, 2024; v1 submitted 25 March, 2024;
originally announced March 2024.
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Controllable bipolaron formation unveiling structural features of trap states in organic charge transport
Authors:
Zichen Wang,
Ilia Kulikov,
Tarig Mustafa,
Jan Behrends,
Henning Sirringhaus
Abstract:
Magnetic resonance methods offer a unique chance for in-depth study of conductive organic material systems, not only accounts for number of charge carriers, but also allows manipulations of spin dynamics of particles. Here we present a study of continuous-wave electrically detected magnetic resonance on a range of organic conjugate polymers under transistor architecture, with tunability in both ca…
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Magnetic resonance methods offer a unique chance for in-depth study of conductive organic material systems, not only accounts for number of charge carriers, but also allows manipulations of spin dynamics of particles. Here we present a study of continuous-wave electrically detected magnetic resonance on a range of organic conjugate polymers under transistor architecture, with tunability in both carrier concentration and drifting electric field. We demonstrate the general existence of bipolaron between mobile and trapped charges at the magnetic resonance condition, then estimates the wavefunction expansion of charge carriers on their hop** sites along conductive pathways. This finding allows direct observation of energetically disordered trap sites under the charge hop** picture, linking-up the microscopic structural properties to the bulk electronic performances.
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Submitted 28 March, 2024; v1 submitted 23 March, 2024;
originally announced March 2024.
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JISA: A Polymorphic Test-and-Measurement Automation Library
Authors:
William Alexander Wood,
Thomas Marsh,
Henning Sirringhaus
Abstract:
JISA is a software library, written in Java, aimed at providing an easy, flexible and standardised means of creating experimental control software for physical sciences researchers. Specifically, with an emphasis on enabling measurement code to be written in an instrument-agnostic way, allowing such routines to be reused across multiple different setups without requiring modification. Additionally…
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JISA is a software library, written in Java, aimed at providing an easy, flexible and standardised means of creating experimental control software for physical sciences researchers. Specifically, with an emphasis on enabling measurement code to be written in an instrument-agnostic way, allowing such routines to be reused across multiple different setups without requiring modification. Additionally, it provides a simple means of recording and handling data, as well as pre-built graphical user interface (GUI) "blocks" to enable the relatively easy creation of graphical control systems. Together these allow users to quickly piece together test-and-measurement programs with coherent user interfaces, without requiring much experience of such things.
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Submitted 24 August, 2023;
originally announced August 2023.
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Fast near-infrared photodetectors based on nontoxic and solution-processable AgBiS2
Authors:
Yi-Teng Huang,
Davide Nodari,
Francesco Furlan,
Youcheng Zhang,
Marin Rusu,
Linjie Dai,
Zahra Andaji-Garmaroudi,
Samuel D. Stranks,
Henning Sirringhaus,
Akshay Rao,
Nicola Gasparini,
Robert L. Z. Hoye
Abstract:
Solution-processable near-infrared (NIR) photodetectors are urgently needed for a wide range of next-generation electronics, including sensors, optical communications and bioimaging. However, there is currently a compromise between low toxicity and slow (<300 kHz cut-off frequency) organic materials versus faster detectors (>300 kHz cut-off frequency) based on compounds containing toxic lead or ca…
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Solution-processable near-infrared (NIR) photodetectors are urgently needed for a wide range of next-generation electronics, including sensors, optical communications and bioimaging. However, there is currently a compromise between low toxicity and slow (<300 kHz cut-off frequency) organic materials versus faster detectors (>300 kHz cut-off frequency) based on compounds containing toxic lead or cadmium. Herein, we circumvent this trade-off by develo** solution-processed AgBiS2 photodetectors with high cut-off frequencies under both white light (>1 MHz) and NIR (approaching 500 kHz) illumination. These high cut-off frequencies are due to the short transit distances of charge-carriers in the AgBiS2 photodetectors, which arise from the strong light absorption of these materials, such that film thicknesses well below 120 nm are adequate to absorb >65% of near-infrared to visible light. By finely controlling the thickness of the photoactive layer, we can modulate the charge-collection efficiency, achieve low dark current densities, and minimize the effects of ion migration to realize fast photodetectors that are stable in air. These outstanding characteristics enable real-time heartbeat sensors based on NIR AgBiS2 photodetectors.
# equal contribution, * corresponding authors
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Submitted 23 August, 2023;
originally announced August 2023.
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Tailoring Interlayer Charge Transfer Dynamics in 2D Perovskites with Electroactive Spacer Molecules
Authors:
Yorrick Boeije,
Wouter T. M. Van Gompel,
Youcheng Zhang,
Pratyush Ghosh,
Szymon J. Zelewski,
Arthur Maufort,
Bart Roose,
Zher Ying Ooi,
Rituparno Chowdhury,
Ilan Devroey,
Stijn Lenaers,
Alasdair Tew,
Linjie Dai,
Krishanu Dey,
Hayden Salway,
Richard H. Friend,
Henning Sirringhaus,
Laurence Lutsen,
Dirk Vanderzande,
Akshay Rao,
Samuel D. Stranks
Abstract:
The family of hybrid organic-inorganic lead-halide perovskites are the subject of intense interest for optoelectronic applications, from light-emitting diodes to photovoltaics to X-ray detectors. Due to the inert nature of most organic molecules, the inorganic sublattice generally dominates the electronic structure and therefore optoelectronic properties of perovskites. Here, we use optically and…
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The family of hybrid organic-inorganic lead-halide perovskites are the subject of intense interest for optoelectronic applications, from light-emitting diodes to photovoltaics to X-ray detectors. Due to the inert nature of most organic molecules, the inorganic sublattice generally dominates the electronic structure and therefore optoelectronic properties of perovskites. Here, we use optically and electronically active carbazole-based Cz-Ci molecules, where Ci indicates an alkylammonium chain and i indicates the number of CH2 units in the chain, varying from 3-5, as cations in the 2D perovskite structure. By investigating the photophysics and charge transport characteristics of (Cz-Ci)2PbI4, we demonstrate a tunable electronic coupling between the inorganic lead-halide and organic layers. The strongest interlayer electronic coupling was found for (Cz-C3)2PbI4, where photothermal deflection spectroscopy results remarkably demonstrate an organic-inorganic charge transfer state. Ultrafast transient absorption spectroscopy measurements demonstrate ultrafast hole transfer from the photoexcited lead-halide layer to the Cz-Ci molecules, the efficiency of which increases by varying the chain length from i=5 to i=3. The charge transfer results in long-lived carriers (10-100 ns) and quenched emission, in stark contrast with the fast (sub-ns) and efficient radiative decay of bound excitons in the more conventional 2D perovskite (PEA)2PbI4, in which phenylethylammonium (PEA) acts as an inert spacer. Electrical charge transport measurements further support enhanced interlayer coupling, showing increased out-of-plane carrier mobility from i=5 to i=3. This study paves the way for the rational design of 2D perovskites with combined inorganic-organic electronic proper-ties through the wide range of functionalities available in the world of organics.
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Submitted 16 June, 2023;
originally announced June 2023.
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Revealing contributions to conduction from transport within ordered and disordered regions in highly doped conjugated polymers through analysis of temperature-dependent Hall measurements
Authors:
William A. Wood,
Ian E. Jacobs,
Leszek J. Spalek,
Yuxuan Huang,
Chen Chen,
Xinglong Ren,
Henning Sirringhaus
Abstract:
Hall effect measurements in doped polymer semiconductors are widely reported, but are difficult to interpret due to screening of Hall voltages by carriers undergoing incoherent transport. Here, we propose a refined analysis for such Hall measurements, based on measuring the Hall coefficient as a function of temperature, and modelling carriers as existing in a regime of variable "deflectability" (i…
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Hall effect measurements in doped polymer semiconductors are widely reported, but are difficult to interpret due to screening of Hall voltages by carriers undergoing incoherent transport. Here, we propose a refined analysis for such Hall measurements, based on measuring the Hall coefficient as a function of temperature, and modelling carriers as existing in a regime of variable "deflectability" (i.e. how strongly they "feel" the magnetic part of the Lorentz force). By linearly interpolating each carrier between the extremes of no deflection and full deflection, we demonstrate that it is possible to extract the (time-averaged) concentration of deflectable charge carriers, $\left<n_d\right>$, the average, temperature-dependent mobility of those carriers, $\left<μ_d\right>(T)$, as well as the ratio of conductivity that comes from such deflectable transport, $d(T)$. Our method was enabled by the construction of an improved AC Hall measurement system, as well as an improved data extraction method. We measured Hall bar devices of ion-exchange doped films of PBTTT-C$_{14}$ from 10--300 K. Our analysis provides evidence for the proportion of conductivity arising from deflectable transport, $d(T)$, increasing with do** level, ranging between 15.4% and 16.4% at room temperature. When compared to total charge-carrier-density estimates from independent methods, the values of $\left<n_d\right>$ extracted suggest that carriers spend $\sim$37% of their time of flight being deflectable in the most highly doped of the devices measured here. The extracted values of $d(T)$ being less than half this value thus suggest that the limiting factor for conductivity in such highly doped devices is carrier mobility, rather than concentration.
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Submitted 24 March, 2023;
originally announced March 2023.
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Charge Transport in Mixed Metal Halide Perovskite Semiconductors
Authors:
Satyaprasad P. Senanayak,
Krishanu Dey,
Ravichandran Shivanna,
Weiwei Li,
Dibyajyoti Ghosh,
Bart Roose,
Youcheng Zhang,
Zahra Andaji-Garmaroudi,
Nikhil Tiwale,
Judith L. MacManus Driscoll,
Richard Friend,
Samuel D. Stranks,
Henning Sirringhaus
Abstract:
Investigation of the inherent field-driven charge transport behaviour of 3D lead halide perovskites has largely remained a challenging task, owing primarily to undesirable ionic migration effects near room temperature. In addition, the presence of methylammonium in many high performing 3D perovskite compositions introduces additional instabilities, which limit reliable room temperature optoelectro…
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Investigation of the inherent field-driven charge transport behaviour of 3D lead halide perovskites has largely remained a challenging task, owing primarily to undesirable ionic migration effects near room temperature. In addition, the presence of methylammonium in many high performing 3D perovskite compositions introduces additional instabilities, which limit reliable room temperature optoelectronic device operation. Here, we address both these challenges and demonstrate that field-effect transistors (FETs) based on methylammonium-free, mixed-metal (Pb/Sn) perovskite compositions, that are widely studied for solar cell and light-emitting diode applications, do not suffer from ion migration effects as their pure Pb counterparts and reliably exhibit hysteresis free p-type transport with high mobility reaching 5.4 $cm^2/Vs$, ON/OFF ratio approaching $10^6$, and normalized channel conductance of 3 S/m. The reduced ion migration is also manifested in an activated temperature dependence of the field-effect mobility with low activation energy, which reflects a significant density of shallow electronic defects. We visualize the suppressed in-plane ionic migration in Sn-containing perovskites compared to their pure-Pb counterparts using photoluminescence microscopy under bias and demonstrate promising voltage and current-stress device operational stabilities. Our work establishes FETs as an excellent platform for providing fundamental insights into the do**, defect and charge transport physics of mixed-metal halide perovskite semiconductors to advance their applications in optoelectronic devices.
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Submitted 5 February, 2022;
originally announced February 2022.
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Distinguishing spin pum** from spin rectification in organic semiconductor-based lateral spin pum** device architectures
Authors:
Piotr Skalski,
Olga Zadvorna,
Deepak Venkateshvaran,
Henning Sirringhaus
Abstract:
Over the last two decades organic spintronics has developed into a striving field with exciting reports of long spin diffusion lengths and spin relaxation times in organic semiconductors (OSCs). Easily processed and inexpensive, OSCs are considered a potential alternative to inorganic materials for use in spintronic applications. Spin currents have been detected in a wide range of materials, howev…
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Over the last two decades organic spintronics has developed into a striving field with exciting reports of long spin diffusion lengths and spin relaxation times in organic semiconductors (OSCs). Easily processed and inexpensive, OSCs are considered a potential alternative to inorganic materials for use in spintronic applications. Spin currents have been detected in a wide range of materials, however, there is still uncertainty over the origin of the signals. Recently, we explored spin transport through an organic semiconductor with lateral spin injection and detection architectures, where the injected spin current is detected non-locally via spin-to-charge conversion in an inorganic detector. In this work we show that the widely-used control experiments like linear power dependence and inversion of the signal with the magnetic field are not sufficient evidence of spin transport and can lead to an incorrect interpretation of the signal. Here, we use in-plane angular dependent measurements to separate pure spin signal from parasitic effects arising from spin rectification (SREs). Apart from well established anisotropic magnetoresistance (AMR) and anomalous Hall effect (AHE), we observed a novel effect which we call spurious inverse spin Hall effect (ISHE). It strongly resembles ISHE behaviour, but arises in the ferromagnet rather than the detector meaning this additional effect has to be considered in future work.
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Submitted 27 August, 2021;
originally announced August 2021.
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The effect of the dielectric end groups on the positive bias stress stability of N2200 organic field effect transistors
Authors:
D. Simatos,
L. J. Spalek,
U. Kraft,
M. Nikolka,
X. Jiao,
C. R. McNeill,
D. Venkateshvaran,
H. Sirringhaus
Abstract:
Bias stress degradation in conjugated polymer field-effect transistors is a fundamental problem in these disordered materials and can be traced back to interactions of the material with environmental species,1,2,3 as well as fabrication-induced defects.4,5 However, the effect of the end groups of the polymer gate dielectric and the associated dipole-induced disorder on bias stress stability has no…
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Bias stress degradation in conjugated polymer field-effect transistors is a fundamental problem in these disordered materials and can be traced back to interactions of the material with environmental species,1,2,3 as well as fabrication-induced defects.4,5 However, the effect of the end groups of the polymer gate dielectric and the associated dipole-induced disorder on bias stress stability has not been studied so far in high-performing n-type materials, such as N2200.6,7 In this work, the performance metrics of N2200 transistors are examined with respect to dielectrics with different end groups (Cytop-M and Cytop-S8). We hypothesize that the polar end groups would lead to increased dipole-induced disorder, and worse performance.1,9,10 The long-time annealing scheme at lower temperatures used in the paper is assumed to lead to better crystallization by allowing the crystalline domains to reorganize in the presence of the solvent.11 It is hypothesized that the higher crystallinity could narrow down the range at which energy carriers are induced and thus decrease the gate dependence of the mobility. The results show that the dielectric end groups do not influence the bias stress stability of N2200 transistors. However, long annealing times result in a dramatic improvement in bias stress stability, with the most stable devices having a mobility that is only weakly dependent on or independent of gate voltage.
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Submitted 14 April, 2021;
originally announced April 2021.
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Room-temperature optically detected magnetic resonance of single defects in hexagonal boron nitride
Authors:
Hannah L. Stern,
John Jarman,
Qiushi Gu,
Simone Eizagirre Barker,
Noah Mendelson,
Dipankar Chugh,
Sam Schott,
Hoe H. Tan,
Henning Sirringhaus,
Igor Aharonovich,
Mete Atatüre
Abstract:
Optically addressable spins in materials are important platforms for quantum technologies, such as repeaters and sensors. Identification of such systems in two-dimensional (2d) layered materials offers advantages over their bulk counterparts, as their reduced dimensionality enables more feasible on-chip integration into devices. Here, we report optically detected magnetic resonance (ODMR) from pre…
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Optically addressable spins in materials are important platforms for quantum technologies, such as repeaters and sensors. Identification of such systems in two-dimensional (2d) layered materials offers advantages over their bulk counterparts, as their reduced dimensionality enables more feasible on-chip integration into devices. Here, we report optically detected magnetic resonance (ODMR) from previously identified carbon-related defects in 2d hexagonal boron nitride (hBN). We show that single-defect ODMR contrast can be as strong as 6% and displays a magnetic-field dependence with both positive or negative sign per defect. This bipolarity can shed light into low contrast reported recently for ensemble ODMR measurements for these defects. Further, the ODMR lineshape comprises a doublet resonance, suggesting either low zero-field splitting or hyperfine coupling. Our results offer a promising route towards realising a room-temperature spin-photon quantum interface in hexagonal boron nitride.
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Submitted 30 March, 2021;
originally announced March 2021.
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Structural and dynamic disorder, not ionic trap**, controls charge transport in highly doped conducting polymers
Authors:
Ian E. Jacobs,
Gabriele D'Avino,
Vincent Lemaur,
Yue Lin,
Yuxuan Huang,
Chen Chen,
Thomas Harrelson,
William Wood,
Leszek J. Spalek,
Tarig Mustafa,
Christopher A. O'Keefe,
Xinglong Ren,
Dimitrios Simatos,
Dion Tjhe,
Martin Statz,
Joseph Strzalka,
**-Kyun Lee,
Iain McCulloch,
Simone Fratini,
David Beljonne,
Henning Sirringhaus
Abstract:
Doped organic semiconductors are critical to emerging device applications, including thermoelectrics, bioelectronics, and neuromorphic computing devices. It is commonly assumed that low conductivities in these materials result primarily from charge trap** by the Coulomb potentials of the dopant counter-ions. Here, we present a combined experimental and theoretical study rebutting this belief. Us…
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Doped organic semiconductors are critical to emerging device applications, including thermoelectrics, bioelectronics, and neuromorphic computing devices. It is commonly assumed that low conductivities in these materials result primarily from charge trap** by the Coulomb potentials of the dopant counter-ions. Here, we present a combined experimental and theoretical study rebutting this belief. Using a newly developed do** technique, we find the conductivity of several classes of high-mobility conjugated polymers to be strongly correlated with paracrystalline disorder but poorly correlated with ionic size, suggesting that Coulomb traps do not limit transport. A general model for interacting electrons in highly doped polymers is proposed and carefully parameterized against atomistic calculations, enabling the calculation of electrical conductivity within the framework of transient localisation theory. Theoretical calculations are in excellent agreement with experimental data, providing insights into the disordered-limited nature of charge transport and suggesting new strategies to further improve conductivities.
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Submitted 23 September, 2021; v1 submitted 5 January, 2021;
originally announced January 2021.
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Tuning Spin Current Injection at Ferromagnet/Non-Magnet Interfaces by Molecular Design
Authors:
Angela Wittmann,
Guillaume Schweicher,
Katharina Broch,
Jiri Novak,
Vincent Lami,
David Cornil,
Erik R. McNellis,
Olia Zadvorna,
Deepak Venkateshvaran,
Kazuo Takimiya,
Yves H. Geerts,
Jerome Cornil,
Yana Vaynzof,
Jairo Sinova,
Shun Watanabe,
Henning Sirringhaus
Abstract:
There is a growing interest in utilizing the distinctive material properties of organic semiconductors for spintronic applications. Here, we explore injection of pure spin current from Permalloy into a small molecule system based on dinaphtho[2,3-b:2,3-f]thieno[3,2-b]thiophene (DNTT) at ferromagnetic resonance. The unique tunability of organic materials by molecular design allows us to study the i…
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There is a growing interest in utilizing the distinctive material properties of organic semiconductors for spintronic applications. Here, we explore injection of pure spin current from Permalloy into a small molecule system based on dinaphtho[2,3-b:2,3-f]thieno[3,2-b]thiophene (DNTT) at ferromagnetic resonance. The unique tunability of organic materials by molecular design allows us to study the impact of interfacial properties on the spin injection efficiency systematically. We show that both, spin injection efficiency at the interface as well as the spin diffusion length can be tuned sensitively by the interfacial molecular structure and side chain substitution of the molecule.
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Submitted 29 July, 2020;
originally announced July 2020.
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arXiv:1910.13325
[pdf]
physics.data-an
cond-mat.mtrl-sci
cs.LG
physics.app-ph
physics.comp-ph
stat.ML
Fragment Graphical Variational AutoEncoding for Screening Molecules with Small Data
Authors:
John Armitage,
Leszek J. Spalek,
Malgorzata Nguyen,
Mark Nikolka,
Ian E. Jacobs,
Lorena Marañón,
Iyad Nasrallah,
Guillaume Schweicher,
Ivan Dimov,
Dimitrios Simatos,
Iain McCulloch,
Christian B. Nielsen,
Gareth Conduit,
Henning Sirringhaus
Abstract:
In the majority of molecular optimization tasks, predictive machine learning (ML) models are limited due to the unavailability and cost of generating big experimental datasets on the specific task. To circumvent this limitation, ML models are trained on big theoretical datasets or experimental indicators of molecular suitability that are either publicly available or inexpensive to acquire. These a…
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In the majority of molecular optimization tasks, predictive machine learning (ML) models are limited due to the unavailability and cost of generating big experimental datasets on the specific task. To circumvent this limitation, ML models are trained on big theoretical datasets or experimental indicators of molecular suitability that are either publicly available or inexpensive to acquire. These approaches produce a set of candidate molecules which have to be ranked using limited experimental data or expert knowledge. Under the assumption that structure is related to functionality, here we use a molecular fragment-based graphical autoencoder to generate unique structural fingerprints to efficiently search through the candidate set. We demonstrate that fragment-based graphical autoencoding reduces the error in predicting physical characteristics such as the solubility and partition coefficient in the small data regime compared to other extended circular fingerprints and string based approaches. We further demonstrate that this approach is capable of providing insight into real world molecular optimization problems, such as searching for stabilization additives in organic semiconductors by accurately predicting 92% of test molecules given 69 training examples. This task is a model example of black box molecular optimization as there is minimal theoretical and experimental knowledge to accurately predict the suitability of the additives.
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Submitted 30 October, 2019; v1 submitted 21 October, 2019;
originally announced October 2019.
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Chasing the killer phonon mode for the rational design of low disorder, high mobility molecular semiconductors
Authors:
Guillaume Schweicher,
Gabriele D'Avino,
Michael T. Ruggiero,
David J. Harkin,
Katharina Broch,
Deepak Venkateshvaran,
Guoming Liu,
Audrey Richard,
Christian Ruzie,
Jeff Armstrong,
Alan R. Kennedy,
Kenneth Shankland,
Kazuo Takimiya,
Yves H. Geerts,
J. Axel Zeitler,
Simone Fratini,
Henning Sirringhaus
Abstract:
Molecular vibrations play a critical role in the charge transport properties of weakly van der Waals bonded organic semiconductors. To understand which specific phonon modes contribute most strongly to the electron-phonon coupling and ensuing thermal energetic disorder in some of the most widely studied high mobility molecular semiconductors, state-of-the-art quantum mechanical simulations of the…
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Molecular vibrations play a critical role in the charge transport properties of weakly van der Waals bonded organic semiconductors. To understand which specific phonon modes contribute most strongly to the electron-phonon coupling and ensuing thermal energetic disorder in some of the most widely studied high mobility molecular semiconductors, state-of-the-art quantum mechanical simulations of the vibrational modes and the ensuing electron phonon coupling constants are combined with experimental measurements of the low-frequency vibrations using inelastic neutron scattering and terahertz time-domain spectroscopy. In this way, the long-axis sliding motion is identified as a killer phonon mode, which in some molecules contributes more than 80% to the total thermal disorder. Based on this insight, a way to rationalize mobility trends between different materials and derive important molecular design guidelines for new high mobility molecular semiconductors is suggested.
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Submitted 12 September, 2019; v1 submitted 26 March, 2019;
originally announced March 2019.
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Molecular Tuning of the Magnetic Response in Organic Semiconductors
Authors:
Erik R. McNellis,
Sam Schott,
Henning Sirringhaus,
Jairo Sinova
Abstract:
The tunability of high-mobility organic semi-conductors (OSCs) holds great promise for molecular spintronics. In this study, we show this extreme variability - and therefore potential tunability - of the molecular gyromagnetic coupling ("g-") tensor with respect to the geometric and electronic structure in a much studied class of OSCs. Composed of a structural theme of phenyl- and chalcogenophene…
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The tunability of high-mobility organic semi-conductors (OSCs) holds great promise for molecular spintronics. In this study, we show this extreme variability - and therefore potential tunability - of the molecular gyromagnetic coupling ("g-") tensor with respect to the geometric and electronic structure in a much studied class of OSCs. Composed of a structural theme of phenyl- and chalcogenophene (group XVI element containing, five-membered) rings and alkyl functional groups, this class forms the basis of several intensely studied high-mobility polymers and molecular OSCs. We show how in this class the g-tensor shifts, $Δg$, are determined by the effective molecular spin-orbit coupling (SOC), defined by the overlap of the atomic spin-density and the heavy atoms in the polymers. We explain the dramatic variations in SOC with molecular geometry, chemical composition, functionalization, and charge life-time using a first-principles theoretical model based on atomic spin populations. Our approach gives a guide to tuning the magnetic response of these OSCs by chemical synthesis.
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Submitted 15 December, 2017;
originally announced December 2017.
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Low-dimensional quantum magnetism in Cu(NCS)$_2$: A molecular framework material
Authors:
Matthew J. Cliffe,
Jeongjae Lee,
Joseph A. M. Paddison,
Sam Schott,
Paromita Mukherjee,
Michael W. Gaultois,
Pascal Manuel,
Henning Sirringhaus,
Siân E. Dutton,
Clare P. Grey
Abstract:
Low-dimensional magnetic materials with spin-$\frac{1}{2}$ moments can host a range of exotic magnetic phenomena due to the intrinsic importance of quantum fluctuations to their behavior. Here, we report the structure, magnetic structure and magnetic properties of copper(II) thiocyanate, Cu(NCS)$_2$, a one-dimensional coordination polymer which displays low-dimensional quantum magnetism. Magnetic…
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Low-dimensional magnetic materials with spin-$\frac{1}{2}$ moments can host a range of exotic magnetic phenomena due to the intrinsic importance of quantum fluctuations to their behavior. Here, we report the structure, magnetic structure and magnetic properties of copper(II) thiocyanate, Cu(NCS)$_2$, a one-dimensional coordination polymer which displays low-dimensional quantum magnetism. Magnetic susceptibility, electron paramagnetic resonance (EPR) spectroscopy, $^{13}$C magic-angle spinning nuclear magnetic resonance (MASNMR) spectroscopy, and density functional theory (DFT) investigations indicate that Cu(NCS)$_2$ behaves as a two-dimensional array of weakly coupled antiferromagnetic spin chains ($J_2 = 133(1)$ K, $α= J_1/J_2 = 0.08$). Powder neutron-diffraction measurements confirm that Cu(NCS)$_2$ orders as a commensurate antiferromagnet below $T_\mathrm{N} = 12$ K, with a strongly reduced ordered moment (0.3 $μ_\mathrm{B}$) due to quantum fluctuations.
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Submitted 30 March, 2018; v1 submitted 13 October, 2017;
originally announced October 2017.
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Tuning the effective spin-orbit coupling in molecular semiconductors
Authors:
Sam Schott,
Erik R. McNellis,
Christian B. Nielsen,
Hung-Yang Chen,
Shun Watanabe,
Hisaaki Tanaka,
Iain McCulloch,
Kazuo Takimiya,
Jairo Sinova,
Henning Sirringhaus
Abstract:
The control of spins and spin to charge conversion in organics requires understanding the molecular spin-orbit coupling (SOC), and a means to tune its strength. However, quantifying SOC strengths indirectly through spin relaxation effects has proven diffi- cult due to competing relaxation mechanisms. Here we present a systematic study of the g-tensor shift in molecular semiconductors and link it d…
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The control of spins and spin to charge conversion in organics requires understanding the molecular spin-orbit coupling (SOC), and a means to tune its strength. However, quantifying SOC strengths indirectly through spin relaxation effects has proven diffi- cult due to competing relaxation mechanisms. Here we present a systematic study of the g-tensor shift in molecular semiconductors and link it directly to the SOC strength in a series of high mobility molecular semiconductors with strong potential for future devices. The results demonstrate a rich variability of the molecular g-shifts with the effective SOC, depending on subtle aspects of molecular composition and structure. We correlate the above g -shifts to spin-lattice relaxation times over four orders of magnitude, from 200 μs to 0.15 μs, for isolated molecules in solution and relate our findings for isolated molecules in solution to the spin relaxation mechanisms that are likely to be relevant in solid state systems.
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Submitted 6 April, 2017; v1 submitted 5 April, 2017;
originally announced April 2017.
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Spin-current emission governed by nonlinear spin dynamics
Authors:
Takaharu Tashiro,
Saki Matsuura,
Akiyo Nomura,
Shun Watanabe,
Keehoon Kang,
Henning Sirringhaus,
Kazuya Ando
Abstract:
Coupling between conduction electrons and localized magnetization is responsible for a variety of phenomena in spintronic devices. This coupling enables to generate spin currents from dynamical magnetization. Due to the nonlinearity of magnetization dynamics, the spin-current emission through the dynamical spin-exchange coupling offers a route for nonlinear generation of spin currents. Here, we de…
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Coupling between conduction electrons and localized magnetization is responsible for a variety of phenomena in spintronic devices. This coupling enables to generate spin currents from dynamical magnetization. Due to the nonlinearity of magnetization dynamics, the spin-current emission through the dynamical spin-exchange coupling offers a route for nonlinear generation of spin currents. Here, we demonstrate spin-current emission governed by nonlinear magnetization dynamics in a metal/magnetic insulator bilayer. The spin-current emission from the magnetic insulator is probed by the inverse spin Hall effect, which demonstrates nontrivial temperature and excitation power dependences of the voltage generation. The experimental results reveal that nonlinear magnetization dynamics and enhanced spin-current emission due to magnon scatterings are triggered by decreasing temperature. This result illustrates the crucial role of the nonlinear magnon interactions in the spin-current emission driven by dynamical magnetization, or nonequilibrium magnons, from magnetic insulators.
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Submitted 22 July, 2015;
originally announced July 2015.
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Simultaneous Extraction of Charge Density Dependent Mobility and Variable Contact Resistance from Thin Film Transistors
Authors:
Riccardo Di Pietro,
Deepak Venkateshvaran,
Andreas Klug,
Emil J. W. List-Kratochvil,
Antonio Facchetti,
Henning Sirringhaus,
Dieter Neher
Abstract:
A model for the extraction of the charge density dependent mobility and variable contact resistance in thin film transistors is proposed by performing a full derivation of the current-voltage characteristics both in the linear and saturation regime of operation. The calculated values are validated against the ones obtained from direct experimental methods. This approach allows unambiguous determin…
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A model for the extraction of the charge density dependent mobility and variable contact resistance in thin film transistors is proposed by performing a full derivation of the current-voltage characteristics both in the linear and saturation regime of operation. The calculated values are validated against the ones obtained from direct experimental methods. This approach allows unambiguous determination of both contact and channel resistance from the analysis of the current voltage characteristics of a single device, with no a-priori assumption on the two parameters. It solves the inconsistencies in the commonly accepted mobility extraction methods and provides new possibilities for the analysis of the injection and transport processes in semiconducting materials.
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Submitted 21 February, 2014;
originally announced February 2014.
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Low voltage control of ferromagnetism in a semiconductor p-n junction
Authors:
M. H. S. Owen,
J. Wunderlich,
V. Novak,
K. Olejnik,
3 J. Zemen,
K. Vyborny,
S. Ogawa,
A. C. Irvine,
A. J. Ferguson,
H. Sirringhaus,
T. Jungwirth
Abstract:
The concept of low-voltage depletion and accumulation of electron charge in semiconductors, utilized in field-effect transistors (FETs), is one of the cornerstones of current information processing technologies. Spintronics which is based on manipulating the collective state of electron spins in a ferromagnet provides complementary technologies for reading magnetic bits or for the solid-state me…
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The concept of low-voltage depletion and accumulation of electron charge in semiconductors, utilized in field-effect transistors (FETs), is one of the cornerstones of current information processing technologies. Spintronics which is based on manipulating the collective state of electron spins in a ferromagnet provides complementary technologies for reading magnetic bits or for the solid-state memories. The integration of these two distinct areas of microelectronics in one physical element, with a potentially major impact on the power consumption and scalability of future devices, requires to find efficient means for controlling magnetization electrically. Current induced magnetization switching phenomena represent a promising step towards this goal, however, they relay on relatively large current densities. The direct approach of controlling the magnetization by low-voltage charge depletion effects is seemingly unfeasible as the two worlds of semiconductors and metal ferromagnets are separated by many orders of magnitude in their typical carrier concentrations. Here we demonstrate that this concept is viable by reporting persistent magnetization switchings induced by short electrical pulses of a few volts in an all-semiconductor, ferromagnetic p-n junction.
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Submitted 6 July, 2008;
originally announced July 2008.
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Charge trap** in polymer transistors probed by terahertz spectroscopy and scanning probe potentiometry
Authors:
J. Lloyd-Hughes,
T. Richards,
H. Sirringhaus,
E. Castro-Camus,
L. M. Herz,
M. B. Johnston
Abstract:
Terahertz time-domain spectroscopy and scanning probe potentiometry were used to investigate charge trap** in polymer field-effect transistors fabricated on a silicon gate. The hole density in the transistor channel was determined from the reduction in the transmitted terahertz radiation under an applied gate voltage. Prolonged device operation creates an exponential decay in the differential…
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Terahertz time-domain spectroscopy and scanning probe potentiometry were used to investigate charge trap** in polymer field-effect transistors fabricated on a silicon gate. The hole density in the transistor channel was determined from the reduction in the transmitted terahertz radiation under an applied gate voltage. Prolonged device operation creates an exponential decay in the differential terahertz transmission, compatible with an increase in the density of trapped holes in the polymer channel. Taken in combination with scanning probe potentionmetry measurements, these results indicate that device degradation is largely a consequence of hole trap**, rather than of changes to the mobility of free holes in the polymer.
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Submitted 18 September, 2006; v1 submitted 11 August, 2006;
originally announced August 2006.
