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Statistical mechanics guides the motions of cm scale objects
Authors:
S. Siriroj,
P. Simakachorn,
N. Khumtong,
T. Sukhonthamethirat,
S. Chaiyachad,
P. Chanprakhon,
K. Chanthorn,
S. Dawprateep,
T. Eknapakul,
I. Fongkaew,
C. Jaisuk,
T. Jampreecha,
W. **data,
Y. Kaeokhamchan,
T. Kongnok,
P. Laohana,
K. Lapawer,
S. Lowpa,
A. Mooltang,
S. Musikajaroen,
S. Nathabumroong,
A. Panpar,
S. Phumying,
S. Polin,
A. Rasritat
, et al. (14 additional authors not shown)
Abstract:
Calculations and mechanistic explanations for the probabilistic movement of objects at the highly relevant cm length scales has been lacking and overlooked due to the complexity of current techniques. Predicting the final-configuration probability of flip** cars for example remains extremely challenging. In this paper we introduce new statistical methodologies to solve these challenging macrosco…
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Calculations and mechanistic explanations for the probabilistic movement of objects at the highly relevant cm length scales has been lacking and overlooked due to the complexity of current techniques. Predicting the final-configuration probability of flip** cars for example remains extremely challenging. In this paper we introduce new statistical methodologies to solve these challenging macroscopic problems. Boltzmann's principles in statistical mechanics have been well recognized for a century for their usefulness in explaining thermodynamic properties of matter in gas, liquid and solid phases. Studied systems usually involve a large number of particles at the atomic scales. However, it is unusual for Boltzmann's principles to be applied to individual objects at centimeter to human-size length scales. We show that the concept of statistical mechanics still holds for describing the probability of a tossed dice landing on a particular face. For regular dice, the one in six probability that the dice land on each face is well known. In the case of orthorhombic dice, this symmetry is broken and hence we need new tools to predict the probability of landing on each face. We propose a new method based on Boltzmann's principles which uses synthetic temperature term. Surprisingly, this approach requires only the dimensions of the thrown object for calculating potential energy as the input, with no other fitting parameters needed. The statistical predictions for landing fit well to experimental data of over fifty-thousand samplings of dice in 23 different dimensions. We believe that the ability to predict, in a simple and tractable manner, the outcomes of macroscopic movement of large scale probabilistic phenomena opens up a new line of approach for explaining many phenomena in the critical centimeter length scale.
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Submitted 28 May, 2018;
originally announced May 2018.
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Direct observation of strain-induced orbital valence band splitting in HfSe$_2$ by sodium intercalation
Authors:
T. Eknapakul,
I. Fongkaew,
S. Siriroj,
W. **data,
S. Chaiyachad,
S. -K. Mo,
S. Thakur,
L. Petaccia,
H. Takagi,
S. Limpijumnong,
W. Meevasana
Abstract:
By using angle-resolved photoemission spectroscopy (ARPES), the variation of the electronic structure of HfSe$_2$ has been studied as a function of sodium intercalation. We observe how this drives a band splitting of the p-orbital valence bands and a simultaneous reduction of the indirect band gap by values of up to 400 and 280 meV respectively. Our calculations indicate that such behaviour is dri…
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By using angle-resolved photoemission spectroscopy (ARPES), the variation of the electronic structure of HfSe$_2$ has been studied as a function of sodium intercalation. We observe how this drives a band splitting of the p-orbital valence bands and a simultaneous reduction of the indirect band gap by values of up to 400 and 280 meV respectively. Our calculations indicate that such behaviour is driven by the band deformation potential, which is a result of our observed anisotropic strain induced by sodium intercalation. The applied uniaxial strain calculations based on density functional theory (DFT) agree strongly with the experimental ARPES data. These findings should assist in studying the physical relationship between do** and strain, as well as for large-scale two-dimensional straintronics.
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Submitted 23 January, 2018;
originally announced January 2018.
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Nearly-free-electron system of monolayer Na on the surface of single-crystal HfSe$_2$
Authors:
T. Eknapakul,
I. Fongkaew,
S. Siriroj,
R. Vidyasagar,
J. D. Denlinger,
L. Bawden,
S. -K. Mo,
P. D. C. King,
H. Takagi,
S. Limpijumnong,
W. Meevasana
Abstract:
The electronic structure of a single Na monolayer on the surface of single-crystal HfSe$_2$ is investigated using angle-resolved photoemission spectroscopy. We find that this system exhibits an almost perfect "nearly-free-electron" behavior with an extracted effective mass of $\sim\!1m_e$, in contrast to heavier masses found previously for alkali metal monolayers on other substrates. Our density-f…
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The electronic structure of a single Na monolayer on the surface of single-crystal HfSe$_2$ is investigated using angle-resolved photoemission spectroscopy. We find that this system exhibits an almost perfect "nearly-free-electron" behavior with an extracted effective mass of $\sim\!1m_e$, in contrast to heavier masses found previously for alkali metal monolayers on other substrates. Our density-functional-theory calculations indicate that this is due to the large lattice constant, causing both exchange and correlation interactions to be suppressed, and to the weak hybridization between the overlayer and the substrate. This is therefore an ideal model system for understanding the properties of two-dimensional materials.
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Submitted 21 July, 2017;
originally announced July 2017.
