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Locally Scale Invariant Chern-Simons Actions in 3+1 Dimensions and Their Emergence From 4+2 Dimensional 2T-Physics
Authors:
Itzhak Bars,
Sophia D. Singh
Abstract:
The traditional Chern-Simons (CS) terms in 3+1 dimensions that modify General Relativity (GR), Quantum Chromodynamics (QCD), and Quantum Electrodynamics (QED), typically lack scale invariance. However, a locally scale invariant and geodesically complete framework for the Standard Model (SM) coupled to GR was previously constructed by employing a tailored form of local scale (Weyl) symmetry. This r…
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The traditional Chern-Simons (CS) terms in 3+1 dimensions that modify General Relativity (GR), Quantum Chromodynamics (QCD), and Quantum Electrodynamics (QED), typically lack scale invariance. However, a locally scale invariant and geodesically complete framework for the Standard Model (SM) coupled to GR was previously constructed by employing a tailored form of local scale (Weyl) symmetry. This refined SM+GR model closely resembles the conventional SM in subatomic realms where gravitational effects are negligible. Nevertheless, it offers an intriguing prediction: the emergence of new physics beyond the traditional SM and GR near spacetime singularities, characterized by intense gravity and substantial deviations in the Higgs field. In this study, we expand upon the enhanced SM+GR by incorporating Weyl invariant CS terms for gravity, QCD, and QED in 3+1 dimensions, thereby integrating CS contributions within the locally scale-invariant and geodesically complete paradigm. Additionally, we establish a holographic correspondence between the new CS terms in 3+1 dimensions and novel 4+2 dimensional CS-type actions within 2T-physics. We demonstrate that the Weyl transformation in 3+1 dimensions arises from 4+2 general coordinate transformations, which unify the hidden extra 1+1 large (not curled up) dimensions with the evident 3+1 dimensions. By leveraging the newfound local conformal symmetry, the augmented and geodesically complete SM+GR+CS introduces innovative tools and perspectives for exploring classical field theory aspects of black hole and cosmological singularities in 3+1 dimensions, while the 4+2 dimensional connection unveils deeper facets of spacetime.
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Submitted 8 May, 2024;
originally announced May 2024.
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Determination of Al occupancy and local structure for \b{eta}-(AlxGa1-x)2O3 alloys across nearly full composition range from Rietveld analysis
Authors:
Jayanta Bhattacharjee,
Archna Sagdeo,
S. D. Singh
Abstract:
Al occupancy and local structure (bond length and bond angles) for monoclinic \b{eta}-(AlxGa1-x)2O3 alloys, with Al compositions (x) up to 90%, have been determined from Rietveld refinement of x-ray diffraction data. Al atom preferentially occupies octahedron (Oh) atomic site in comparison to tetrahedron (Td) atomic site. However, sizable number of Td atomic sites i.e. 20% for Al composition of 5%…
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Al occupancy and local structure (bond length and bond angles) for monoclinic \b{eta}-(AlxGa1-x)2O3 alloys, with Al compositions (x) up to 90%, have been determined from Rietveld refinement of x-ray diffraction data. Al atom preferentially occupies octahedron (Oh) atomic site in comparison to tetrahedron (Td) atomic site. However, sizable number of Td atomic sites i.e. 20% for Al composition of 5% remain occupied by Al atoms, which is found to increase sharply with Al composition. The Oh atomic sites are not fully occupied by Al atoms even for Al composition of 90%. The lattice parameters (band gap) of \b{eta}-(AlxGa1-x)2O3 alloy decrease (increases) linearly with Al composition, but a change in slope of variation of both lattice parameters and band gap is observed at around Al composition of 50%. The lattice is found to be distorted for Al compositions more than 50% as indicated by large change in the bond angles. The lattice distortion is determined to be the origin for the observed change in slope for the variation of both lattice parameters and band gap for monoclinic \b{eta}-(AlxGa1-x)2O3 alloy system. Our results provide an insight in to the local structure of \b{eta}-(AlxGa1-x)2O3 alloys, which are required to have better understanding of their physical properties.
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Submitted 16 March, 2022;
originally announced March 2022.
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Data reduction procedure for correction of geometrical factors in the analysis of specular x-ray reflectivity of small samples
Authors:
Arijeet Das,
Shreyashkar Dev Singh,
R. J. Choudhari,
S. K. Rai,
Tapas Ganguli
Abstract:
For small samples, the modification of the XRR profile by the geometrical factors manifesting due to profile and size of the beam and the size of the sample is significant. Geometrical factors extend till spill over angle which is often greater than critical angle for small samples. To separate the geometrical factor, it is necessary to know the spill over angle. Since geometrical factor is a smoo…
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For small samples, the modification of the XRR profile by the geometrical factors manifesting due to profile and size of the beam and the size of the sample is significant. Geometrical factors extend till spill over angle which is often greater than critical angle for small samples. To separate the geometrical factor, it is necessary to know the spill over angle. Since geometrical factor is a smoothly varying function and extends beyond critical angle, it is impossible to determine the spill over angle from XRR profile of small samples. We have shown by comparing the normal XRR profile of a small sample with the XRR profile taken with a surface contact knife edge on the same sample, that the spill over angle can be determined. Thus we have developed a procedure for data reduction for small samples and validated it with suitable experiments. Unlike hitherto used methods which have drawbacks, this is a self consistent method for data reduction
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Submitted 4 April, 2018; v1 submitted 3 April, 2018;
originally announced April 2018.
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Development of high power quantum well lasers at RRCAT
Authors:
T. K. Sharma,
Tapas Ganguli,
V. K. Dixit,
S. D. Singh,
S. Pal,
S. Porwal,
Ravi Kumar,
Alexander Khakha,
R. Jangir,
V. Kheraj,
P. Rawat,
A. K. Nath
Abstract:
We at RRCAT have recently developed high power laser diodes in the wavelength range of 740 to 1000 nm. A typical semiconductor laser structure is consisted of about 10 epilayers with different composition, thickness and do** values. For example, a laser diode operating at 0.8 micron has either GaAs or GaAsP quantum well as an active layer. The quantum well is sandwiched between AlGaAs wider band…
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We at RRCAT have recently developed high power laser diodes in the wavelength range of 740 to 1000 nm. A typical semiconductor laser structure is consisted of about 10 epilayers with different composition, thickness and do** values. For example, a laser diode operating at 0.8 micron has either GaAs or GaAsP quantum well as an active layer. The quantum well is sandwiched between AlGaAs wider bandgap waveguide and cladding layers. The complete laser structure is grown by metal organic vapour phase epitaxy technique and devices are fabricated through standard procedure using photolithography. We recently achieved about 5.3 Watt peak power at 853 nm. These laser diodes were tested under pulsed operation at room temperature for 500 nanosecond pulse duration with a duty cycle of 1:1000. Laser diode arrays consisting of 6-10 elements were also developed and tested for operation in pulsed mode at room temperature.
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Submitted 4 December, 2014;
originally announced December 2014.
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Design and Development of a Nanoscale Multi Probe System Using Open Source SPM Controller and GXSM Software: A Tool of Nanotechnology
Authors:
S. K. Suresh Babu,
J. S. Devrenjith Singh,
D. Jackuline Moni,
D. Devaprakasam
Abstract:
We report our design, development, installation and troubleshooting of an open source Gnome X Scanning Microscopy (GXSM) software package for controlling and processing of modern Scanning Probe Microscopy (SPM) system as a development tool of Nanotechnology. GXSM is a full featured analysis tool for the characterization of nanomaterials with different controlling tools like Atomic Force Microscopy…
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We report our design, development, installation and troubleshooting of an open source Gnome X Scanning Microscopy (GXSM) software package for controlling and processing of modern Scanning Probe Microscopy (SPM) system as a development tool of Nanotechnology. GXSM is a full featured analysis tool for the characterization of nanomaterials with different controlling tools like Atomic Force Microscopy (AFM), Scanning Tunneling Spectroscopy (STS), scanning tunneling microscopy (STM), Nanoindentation and etc.,. This developed package tool consists of Digital Signal Processing (DSP) and image processing system of SPM. A digital signal processor (DSP) subsystem runs the feedback loop, generates the scanning signals and acquires the data during SPM measurements. With installed SR-Hwl plug-in this developed package was tested in no hardware mode.
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Submitted 10 October, 2014;
originally announced October 2014.
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Realization of epitaxial ZnO layers on GaP(111) substrates by pulsed laser deposition
Authors:
S. D. Singh,
R. S. Ajimsha,
C. Mukherjee,
Ravi Kumar,
L. M. Kukreja,
Tapas Ganguli
Abstract:
Epitaxy of ZnO layers on cubic GaP (111) substrates has been demonstrated using pulsed laser deposition. Out of plane and in-plane epitaxial relationship of ZnO layer with respect to GaP substrate determined using phi scans in high resolution X-ray diffraction measurements are (0001) ZnO || (111) GaP and (-1 2 -1 0) ZnO || (-1 1 0) GaP respectively. Our results of epitaxy of ZnO and its intense ex…
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Epitaxy of ZnO layers on cubic GaP (111) substrates has been demonstrated using pulsed laser deposition. Out of plane and in-plane epitaxial relationship of ZnO layer with respect to GaP substrate determined using phi scans in high resolution X-ray diffraction measurements are (0001) ZnO || (111) GaP and (-1 2 -1 0) ZnO || (-1 1 0) GaP respectively. Our results of epitaxy of ZnO and its intense excitonic photoluminescence with very weak defect luminescence suggest that (111) oriented GaP can be a potential buffer layer choice for the integration of ZnO based optoelectronic devices on Si(111) substrates.
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Submitted 17 June, 2014;
originally announced June 2014.
