Showing 1–6 of 6 results for author: Simonaitis, J

Analysis and Applications of a Heralded Electron Source

Authors: Stewart A. Koppell, John W. Simonaitis, Maurice A. R. Krielaart, William P. Putnam, Karl K. Berggren, Phillip D. Keathley

Abstract: We analytically describe the noise properties of a heralded electron source made from a standard electron gun, a weak photonic coupler, a single photon counter, and an electron energy filter. We argue the traditional heralding figure of merit, the Klyshko efficiency, is an insufficient statistic for characterizing performance in dose-control and dose-limited applications. Instead, we describe the… ▽ More We analytically describe the noise properties of a heralded electron source made from a standard electron gun, a weak photonic coupler, a single photon counter, and an electron energy filter. We argue the traditional heralding figure of merit, the Klyshko efficiency, is an insufficient statistic for characterizing performance in dose-control and dose-limited applications. Instead, we describe the sub-Poissonian statistics of the source using the fractional reduction in variance and the fractional increase in Fisher Information. Using these figures of merit, we discuss the engineering requirements for efficient heralding and evaluate potential applications using simple models of electron lithography, bright-field scanning transmission electron microscopy (BFSTEM), and scanning electron microscopy (SEM). We find that the advantage in each of these applications is situational, but potentially significant: dynamic control of the trade-off between write speed and shot noise in electron lithography; an order of magnitude dose reduction in BFSTEM for thin samples (e.g. 2D materials); and a doubling of dose efficiency for wall-steepness estimation in SEM. △ Less

Submitted 26 June, 2024; originally announced June 2024.

Reduced ITO for Transparent Superconducting Electronics

Authors: Emma Batson, Marco Colangelo, John Simonaitis, Eyosias Gebremeskel, Owen Medeiros, Mayuran Saravanapavanantham, Vladimir Bulovic, P. Donald Keathley, Karl K. Berggren

Abstract: Absorption of light in superconducting electronics is a major limitation on the quality of circuit architectures that integrate optical components with superconducting components. A 10 nm thick film of a typical superconducting material like niobium can absorb over half of any incident optical radiation. We propose instead using superconductors which are transparent to the wavelengths used elsewhe… ▽ More Absorption of light in superconducting electronics is a major limitation on the quality of circuit architectures that integrate optical components with superconducting components. A 10 nm thick film of a typical superconducting material like niobium can absorb over half of any incident optical radiation. We propose instead using superconductors which are transparent to the wavelengths used elsewhere in the system. In this paper we investigated reduced indium tin oxide (ITO) as a potential transparent superconductor for electronics. We fabricated and characterized superconducting wires of reduced indium tin oxide. We also showed that a $\SI{10}{nm}$ thick film of the material would only absorb about 1 - 20\% of light between 500 - 1700 nm. △ Less

Submitted 16 December, 2022; originally announced December 2022.

Comments: 11 pages + 10 pages appendix, 5 figures + 5 figures appendix, submitting to IOP SUST

Secondary Electron Count Imaging in SEM

Authors: Akshay Agarwal, John Simonaitis, Vivek K. Goyal, Karl K. Berggren

Abstract: Scanning electron microscopy (SEM) is a versatile technique used to image samples at the nanoscale. Conventional imaging by this technique relies on finding the average intensity of the signal generated on a detector by secondary electrons (SEs) emitted from the sample and is subject to noise due to variations in the voltage signal from the detector. This noise can result in degradation of the SEM… ▽ More Scanning electron microscopy (SEM) is a versatile technique used to image samples at the nanoscale. Conventional imaging by this technique relies on finding the average intensity of the signal generated on a detector by secondary electrons (SEs) emitted from the sample and is subject to noise due to variations in the voltage signal from the detector. This noise can result in degradation of the SEM image quality for a given imaging dose. SE count imaging, which uses the direct count of SEs detected from the sample instead of the average signal intensity, would overcome this limitation and lead to improvement in SEM image quality. In this paper, we implement an SE count imaging scheme by synchronously outcoupling the detector and beam scan signals from the microscope and using custom code to count detected SEs. We demonstrate a ~30% increase in the image signal-to-noise-ratio due to SE counting compared to conventional imaging. The only external hardware requirement for this imaging scheme is an oscilloscope fast enough to accurately sample the detector signal for SE counting, making the scheme easily implementable on any SEM. △ Less

Submitted 2 November, 2021; originally announced November 2021.

Precise, Sub-Nanosecond, and High-Voltage Switching of Complex Loads Enabled by Gallium Nitride Electronics

Authors: John W. Simonaitis, Benjamin Slayton, Yugu Yang-Keathley, Phillip D. Keathley, Karl K. Berggren

Abstract: In this work, we report the use of commercial Gallium Nitride (GaN) power electronics to precisely switch complex distributed loads, such as electron lenses and deflectors, without impedance matching. Depending on the chosen GaN field effect transistor (GaNFET) and driver, these GaN pulsers are capable of generating pulses ranging from 100 - 650 V and 5 - 60 A in 0.25 - 8 ns using simple designs w… ▽ More In this work, we report the use of commercial Gallium Nitride (GaN) power electronics to precisely switch complex distributed loads, such as electron lenses and deflectors, without impedance matching. Depending on the chosen GaN field effect transistor (GaNFET) and driver, these GaN pulsers are capable of generating pulses ranging from 100 - 650 V and 5 - 60 A in 0.25 - 8 ns using simple designs with easy control, few-nanosecond propagation delays, and MHz repetition rates. We experimentally demonstrate a simple 250 ps, 100 V pulser measured by a directly coupled 2 GHz oscilloscope. By introducing resistive dampening, we can eliminate ringing to allow for precise 100 V transitions that complete a -10 V to -90 V transition in 1.5 ns, limited primarily by the inductance of the oscilloscope measurement path. The performance of the pulser attached to various load structures is simulated, demonstrating the possibility of even faster switching of internal fields in these loads. These circuits also have 0.25 cm$\mathrm{^2}$ active regions and <1 W power dissipation, enabling their integration into a wide variety of environments and apparatus. The proximity of the GaNFETs to the load due to this integration minimizes parasitic quantities that slow switching as well as remove the need to match from 50 $Ω$ lines by allowing for a lumped element approximation small loads. We expect these GaN pulsers to have broad application in fields such as optics, nuclear sciences, charged particle optics, and atomic physics that require nanosecond, high-voltage transitions. △ Less

Submitted 5 February, 2021; originally announced February 2021.

Comments: 34 pages, 14 figures

Electrostatic electron mirror in SEM for simultaneous imaging of top and bottom surfaces of a sample

Authors: Navid Abedzadeh, M. A. R. Krielaart, Chung-Soo Kim, John Simonaitis, Richard Hobbs, Pieter Kruit, Karl K. Berggren

Abstract: The use of electron mirrors in aberration correction and surface-sensitive microscopy techniques such as low-energy electron microscopy has been established. However, in this work, by implementing an easy to construct, fully electrostatic electron mirror system under a sample in a conventional scanning electron microscope (SEM), we present a new imaging scheme which allows us to form scanned image… ▽ More The use of electron mirrors in aberration correction and surface-sensitive microscopy techniques such as low-energy electron microscopy has been established. However, in this work, by implementing an easy to construct, fully electrostatic electron mirror system under a sample in a conventional scanning electron microscope (SEM), we present a new imaging scheme which allows us to form scanned images of the top and bottom surfaces of the sample simultaneously. We believe that this imaging scheme could be of great value to the field of in-situ SEM which has been limited to observation of dynamic changes such as crack propagation and other surface phenomena on one side of samples at a time. We analyze the image properties when using a flat versus a concave electron mirror system and discuss two different regimes of operation. In addition to in-situ SEM, we foresee that our imaging scheme could open up avenues toward spherical aberration correction by the use of electron mirrors in SEMs without the need for complex beam separators. △ Less

Submitted 17 December, 2020; originally announced December 2020.

Image-Histogram-based Secondary Electron Counting to Evaluate Detective Quantum Efficiency in SEM

Authors: Akshay Agarwal, John Simonaitis, Karl K. Berggren

Abstract: Scanning electron microscopy is a powerful tool for nanoscale imaging of organic and inorganic materials. An important metric for characterizing the limits of performance of these microscopes is the Detective Quantum Efficiency (DQE), which measures the fraction of emitted secondary electrons (SEs) that are detected by the SE detector. However, common techniques for measuring DQE approximate the S… ▽ More Scanning electron microscopy is a powerful tool for nanoscale imaging of organic and inorganic materials. An important metric for characterizing the limits of performance of these microscopes is the Detective Quantum Efficiency (DQE), which measures the fraction of emitted secondary electrons (SEs) that are detected by the SE detector. However, common techniques for measuring DQE approximate the SE emission process to be Poisson distributed, which can lead to incorrect DQE values. In this paper, we introduce a technique for measuring DQE in which we directly count the mean number of secondary electrons detected from a sample using image histograms. This technique does not assume Poisson distribution of SEs and makes it possible to accurately measure DQE for a wider range of imaging conditions. As a demonstration of our technique, we map the variation of DQE as a function of working distance in the microscope. △ Less

Submitted 13 August, 2020; v1 submitted 4 August, 2020; originally announced August 2020.