Showing 1–19 of 19 results for author: Simmons, C B

Signatures of atomic-scale structure in the energy dispersion and coherence of a Si quantum-dot qubit

Authors: J. C. Abadillo-Uriel, Brandur Thorgrimsson, Dohun Kim, L. W. Smith, C. B. Simmons, Daniel R. Ward, Ryan H. Foote, J. Corrigan, D. E. Savage, M. G. Lagally, M. J. Calderón, S. N. Coppersmith, M. A. Eriksson, Mark Friesen

Abstract: We report anomalous behavior in the energy dispersion of a three-electron double-quantum-dot hybrid qubit and argue that it is caused by atomic-scale disorder at the quantum-well interface. By employing tight-binding simulations, we identify potential disorder profiles that induce behavior consistent with the experiments. The results indicate that disorder can give rise to "sweet spots" where the… ▽ More We report anomalous behavior in the energy dispersion of a three-electron double-quantum-dot hybrid qubit and argue that it is caused by atomic-scale disorder at the quantum-well interface. By employing tight-binding simulations, we identify potential disorder profiles that induce behavior consistent with the experiments. The results indicate that disorder can give rise to "sweet spots" where the decoherence caused by charge noise is suppressed, even in a parameter regime where true sweet spots are unexpected. Conversely, "hot spots" where the decoherence is enhanced can also occur. Our results suggest that, under appropriate conditions, interfacial atomic structure can be used as a tool to enhance the fidelity of Si double-dot qubits. △ Less

Submitted 25 May, 2018; originally announced May 2018.

Comments: 7 pages

Journal ref: Phys. Rev. B 98, 165438 (2018)

Extending the coherence of a quantum dot hybrid qubit

Authors: Brandur Thorgrimsson, Dohun Kim, Yuan-Chi Yang, L. W. Smith, C. B. Simmons, Daniel R. Ward, Ryan H. Foote, J. Corrigan, D. E. Savage, M. G. Lagally, Mark Friesen, S. N. Coppersmith, M. A. Eriksson

Abstract: Identifying and ameliorating dominant sources of decoherence are important steps in understanding and improving quantum systems. Here we show that the free induction decay time ($T_{2}^{*}$) and the Rabi decay rate ($Γ_{\mathrm{Rabi}}$) of the quantum dot hybrid qubit can be increased by more than an order of magnitude by appropriate tuning of the qubit parameters and operating points. By operatin… ▽ More Identifying and ameliorating dominant sources of decoherence are important steps in understanding and improving quantum systems. Here we show that the free induction decay time ($T_{2}^{*}$) and the Rabi decay rate ($Γ_{\mathrm{Rabi}}$) of the quantum dot hybrid qubit can be increased by more than an order of magnitude by appropriate tuning of the qubit parameters and operating points. By operating in the spin-like regime of this qubit, and choosing parameters that increase the qubit's resilience to charge noise (which we show is presently the limiting noise source for this qubit), we achieve a Ramsey decay time $T_{2}^{*}$ of $177~\mathrm{ns}$ and a Rabi decay time, $1/Γ_{\mathrm{Rabi}}$, exceeding $1~\mathrm{μs}$. We find that the slowest $Γ_{\mathrm{Rabi}}$ is limited by fluctuations in the Rabi frequency induced by charge noise and not by fluctuations in the qubit energy itself. △ Less

Submitted 19 June, 2017; v1 submitted 15 November, 2016; originally announced November 2016.

Comments: 10 pages, 6 figures. Supplementary material is included as appendices

Journal ref: npj Quantum Information 3, Article number: 32 (2017)

Identifying single electron charge sensor events using wavelet edge detection

Authors: J. R. Prance, B. J. Van Bael, C. B. Simmons, D. E. Savage, M. G. Lagally, Mark Friesen, S. N. Coppersmith, M. A. Eriksson

Abstract: The operation of solid-state qubits often relies on single-shot readout using a nanoelectronic charge sensor, and the detection of events in a noisy sensor signal is crucial for high fidelity readout of such qubits. The most common detection scheme, comparing the signal to a threshold value, is accurate at low noise levels but is not robust to low-frequency noise and signal drift. We describe an a… ▽ More The operation of solid-state qubits often relies on single-shot readout using a nanoelectronic charge sensor, and the detection of events in a noisy sensor signal is crucial for high fidelity readout of such qubits. The most common detection scheme, comparing the signal to a threshold value, is accurate at low noise levels but is not robust to low-frequency noise and signal drift. We describe an alternative method for identifying charge sensor events using wavelet edge detection. The technique is convenient to use and we show that, with realistic signals and a single tunable parameter, wavelet detection can outperform thresholding and is significantly more tolerant to 1/f and low-frequency noise. △ Less

Submitted 7 June, 2015; originally announced June 2015.

Comments: 11 pages, 4 figures

Journal ref: Nanotechnology 26, 215201 (2015)

High fidelity resonant gating of a silicon based quantum dot hybrid qubit

Authors: Dohun Kim, D. R. Ward, C. B. Simmons, D. E. Savage, M. G. Lagally, Mark Friesen, S. N. Coppersmith, Mark A. Eriksson

Abstract: Isolated spins in semiconductors provide a promising platform to explore quantum mechanical coherence and develop engineered quantum systems. Silicon has attracted great interest as a host material for develo** spin qubits because of its weak spin-orbit coupling and hyperfine interaction, and several architectures based on gate defined quantum dots have been proposed and demonstrated experimenta… ▽ More Isolated spins in semiconductors provide a promising platform to explore quantum mechanical coherence and develop engineered quantum systems. Silicon has attracted great interest as a host material for develo** spin qubits because of its weak spin-orbit coupling and hyperfine interaction, and several architectures based on gate defined quantum dots have been proposed and demonstrated experimentally. Recently, a quantum dot hybrid qubit formed by three electrons in double quantum dot was proposed, and non-adiabatic pulsed-gate operation was implemented experimentally, demonstrating simple and fast electrical manipulations of spin states with a promising ratio of coherence time to manipulation time. However, the overall gate fidelity of the pulse-gated hybrid qubit is limited by relatively fast dephasing due to charge noise during one of the two required gate operations. Here we perform the first microwave-driven gate operations of a quantum dot hybrid qubit, avoiding entirely the regime in which it is most sensitive to charge noise. Resonant detuning modulation along with phase control of the microwaves enables a pi rotation time of less than 5 ns (50 ps) around X(Z)-axis with high fidelities > 93 (96) %. We also implement Hahn echo and Carr-Purcell (CP) dynamic decoupling sequences with which we demonstrate a coherence time of over 150 ns. We further discuss a pathway to improve gate fidelity to above 99 %, exceeding the threshold for surface code based quantum error correction. △ Less

Submitted 10 February, 2015; originally announced February 2015.

Comments: 9 pages and 6 figures including supplementary information

Journal ref: npj Quantum Information 1 15004 (2015)

Microwave-driven coherent operations of a semiconductor quantum dot charge qubit

Authors: Dohun Kim, D. R. Ward, C. B. Simmons, John King Gamble, Robin Blume-Kohout, Erik Nielsen, D. E. Savage, M. G. Lagally, Mark Friesen, S. N. Coppersmith, M. A. Eriksson

Abstract: A most intuitive realization of a qubit is a single electron charge sitting at two well-defined positions, such as the left and right sides of a double quantum dot. This qubit is not just simple but also has the potential for high-speed operation, because of the strong coupling of electric fields to the electron. However, charge noise also couples strongly to this qubit, resulting in rapid dephasi… ▽ More A most intuitive realization of a qubit is a single electron charge sitting at two well-defined positions, such as the left and right sides of a double quantum dot. This qubit is not just simple but also has the potential for high-speed operation, because of the strong coupling of electric fields to the electron. However, charge noise also couples strongly to this qubit, resulting in rapid dephasing at nearly all operating points, with the exception of one special 'sweet spot'. Fast dc voltage pulses have been used to manipulate semiconductor charge qubits, but these previous experiments did not achieve high-fidelity control, because dc gating requires excursions away from the sweet spot. Here, by using resonant ac microwave driving, we achieve coherent manipulation of a semiconductor charge qubit, demonstrating a Rabi frequency of up to 2GHz, a value approaching the intrinsic qubit frequency of 4.5GHz. Z-axis rotations of the qubit are well-protected at the sweet spot, and by using ac gating, we demonstrate the same protection for rotations about arbitrary axes in the X-Y plane of the qubit Bloch sphere. We characterize operations on the qubit using two independent tomographic approaches: standard process tomography and a newly developed method known as gate set tomography. Both approaches show that this qubit can be operated with process fidelities greater than 86% with respect to a universal set of unitary single-qubit operations. △ Less

Submitted 28 July, 2014; originally announced July 2014.

Comments: 9 pages, 5 figures including supplementary information

Journal ref: Nature Nanotechnology 10 243 to 247 (2015)

Quantum control and process tomography of a semiconductor quantum dot hybrid qubit

Authors: Dohun Kim, Zhan Shi, C. B. Simmons, D. R. Ward, J. R. Prance, Teck Seng Koh, John King Gamble, D. E. Savage, M. G. Lagally, Mark Friesen, S. N. Coppersmith, M. A. Eriksson

Abstract: The similarities between gated quantum dots and the transistors in modern microelectronics - in fabrication methods, physical structure, and voltage scales for manipulation - have led to great interest in the development of quantum bits (qubits) in semiconductor quantum dots. While quantum dot spin qubits have demonstrated long coherence times, their manipulation is often slower than desired for i… ▽ More The similarities between gated quantum dots and the transistors in modern microelectronics - in fabrication methods, physical structure, and voltage scales for manipulation - have led to great interest in the development of quantum bits (qubits) in semiconductor quantum dots. While quantum dot spin qubits have demonstrated long coherence times, their manipulation is often slower than desired for important future applications, such as factoring. Further, scalability and manufacturability are enhanced when qubits are as simple as possible. Previous work has increased the speed of spin qubit rotations by making use of integrated micromagnets, dynamic pum** of nuclear spins, or the addition of a third quantum dot. Here we demonstrate a new qubit that offers both simplicity - it requires no special preparation and lives in a double quantum dot with no added complexity - and is very fast: we demonstrate full control on the Bloch sphere with $π$-rotation times less than 100 ps in two orthogonal directions. We report full process tomography, extracting high fidelities equal to or greater than 85% for X-rotations and 94% for Z-rotations. We discuss a path forward to fidelities better than the threshold for quantum error correction. △ Less

Submitted 17 January, 2014; originally announced January 2014.

Comments: 6 pages, excluding Appendix

Journal ref: Nature 511, 70 (2014)

Fast coherent manipulation of three-electron states in a double quantum dot

Authors: Zhan Shi, C. B. Simmons, Daniel R. Ward, J. R. Prance, Xian Wu, Teck Seng Koh, John King Gamble, D. E. Savage, M. G. Lagally, Mark Friesen, S. N. Coppersmith, M. A. Eriksson

Abstract: A fundamental goal in the manipulation of quantum systems is the achievement of many coherent oscillations within the characteristic dephasing time T2*[1]. Most manipulations of electron spins in quantum dots have focused on the construction and control of two-state quantum systems, or qubits, in which each quantum dot is occupied by a single electron[2-7]. Here we perform quantum manipulations on… ▽ More A fundamental goal in the manipulation of quantum systems is the achievement of many coherent oscillations within the characteristic dephasing time T2*[1]. Most manipulations of electron spins in quantum dots have focused on the construction and control of two-state quantum systems, or qubits, in which each quantum dot is occupied by a single electron[2-7]. Here we perform quantum manipulations on a system with more electrons per quantum dot, in a double dot with three electrons. We demonstrate that tailored pulse sequences can be used to induce coherent rotations between 3-electron quantum states. Certain pulse sequences yield coherent oscillations with a very high figure of merit (the ratio of coherence time to rotation time) of >100. The presence of the third electron enables very fast rotations to all possible states, in contrast to the case when only two electrons are used, in which some rotations are slow. The minimum oscillation frequency we observe is >5 GHz. △ Less

Submitted 2 August, 2013; originally announced August 2013.

Comments: 5 pages, 2 figures, submitted for publication

Journal ref: Nat. Commun. 5:3020 (2014)

Coherent Quantum Oscillations in a Silicon Charge Qubit

Authors: Zhan Shi, C. B. Simmons, Daniel. R. Ward, J. R. Prance, R. T. Mohr, Teck Seng Koh, John King Gamble, Xian. Wu, D. E. Savage, M. G. Lagally, Mark Friesen, S. N. Coppersmith, M. A. Eriksson

Abstract: Fast quantum oscillations of a charge qubit in a double quantum dot fabricated in a Si/SiGe heterostructure are demonstrated and characterized experimentally. The measured inhomogeneous dephasing time T2* ranges from 127ps to ~2.1ns; it depends substantially on how the energy difference of the two qubit states varies with external voltages, consistent with a decoherence process that is dominated b… ▽ More Fast quantum oscillations of a charge qubit in a double quantum dot fabricated in a Si/SiGe heterostructure are demonstrated and characterized experimentally. The measured inhomogeneous dephasing time T2* ranges from 127ps to ~2.1ns; it depends substantially on how the energy difference of the two qubit states varies with external voltages, consistent with a decoherence process that is dominated by detuning noise(charge noise that changes the asymmetry of the qubit's double-well potential). In the regime with the shortest T2*, applying a charge-echo pulse sequence increases the measured inhomogeneous decoherence time from 127ps to 760ps, demonstrating that low-frequency noise processes are an important dephasing mechanism. △ Less

Submitted 17 July, 2013; v1 submitted 2 August, 2012; originally announced August 2012.

Comments: 5 pages plus 3 page supplemental (8 pages total)

Journal ref: Phys. Rev. B 88, 075416 (2013)

A fast "hybrid" silicon double quantum dot qubit

Authors: Zhan Shi, C. B. Simmons, J. R. Prance, John King Gamble, Teck Seng Koh, Yun-Pil Shim, Xuedong Hu, D. E. Savage, M. G. Lagally, M. A. Eriksson, Mark Friesen, S. N. Coppersmith

Abstract: We propose a quantum dot qubit architecture that has an attractive combination of speed and fabrication simplicity. It consists of a double quantum dot with one electron in one dot and two electrons in the other. The qubit itself is a set of two states with total spin quantum numbers $S^2=3/4$ ($S=\half$) and $S_z = -\half$, with the two different states being singlet and triplet in the doubly occ… ▽ More We propose a quantum dot qubit architecture that has an attractive combination of speed and fabrication simplicity. It consists of a double quantum dot with one electron in one dot and two electrons in the other. The qubit itself is a set of two states with total spin quantum numbers $S^2=3/4$ ($S=\half$) and $S_z = -\half$, with the two different states being singlet and triplet in the doubly occupied dot. The architecture is relatively simple to fabricate, a universal set of fast operations can be implemented electrically, and the system has potentially long decoherence times. These are all extremely attractive properties for use in quantum information processing devices. △ Less

Submitted 30 October, 2011; originally announced October 2011.

Comments: Includes text and supplemental material, 12 pages, 9 figures

Journal ref: Phys. Rev. Lett. 108, 140503 (2012)

Single-shot measurement of triplet-singlet relaxation in a Si/SiGe double quantum dot

Authors: J. R. Prance, Zhan Shi, C. B. Simmons, D. E. Savage, M. G. Lagally, L. R. Schreiber, L. M. K. Vandersypen, Mark Friesen, Robert Joynt, S. N. Coppersmith, M. A. Eriksson

Abstract: We investigate the lifetime of two-electron spin states in a few-electron Si/SiGe double dot. At the transition between the (1,1) and (0,2) charge occupations, Pauli spin blockade provides a readout mechanism for the spin state. We use the statistics of repeated single-shot measurements to extract the lifetimes of multiple states simultaneously. At zero magnetic field, we find that all three tripl… ▽ More We investigate the lifetime of two-electron spin states in a few-electron Si/SiGe double dot. At the transition between the (1,1) and (0,2) charge occupations, Pauli spin blockade provides a readout mechanism for the spin state. We use the statistics of repeated single-shot measurements to extract the lifetimes of multiple states simultaneously. At zero magnetic field, we find that all three triplet states have equal lifetimes, as expected, and this time is ~10 ms. At non-zero field, the T0 lifetime is unchanged, whereas the T- lifetime increases monotonically with field, reaching 3 seconds at 1 T. △ Less

Submitted 2 November, 2011; v1 submitted 28 October, 2011; originally announced October 2011.

Comments: 4 pages, 3 figures, supplemental information. Typos fixed; updated to submitted version

Journal ref: Phys. Rev. Lett. 108, 046808 (2012)

Tunable singlet-triplet splitting in a few-electron Si/SiGe quantum dot

Authors: Zhan Shi, C. B. Simmons, J. R. Prance, John King Gamble, Mark Friesen, D. E. Savage, M. G. Lagally, S. N. Coppersmith, M. A. Eriksson

Abstract: We measure the excited-state spectrum of a Si/SiGe quantum dot as a function of in-plane magnetic field, and we identify the spin of the lowest three eigenstates in an effective two-electron regime. The singlet-triplet splitting is an essential parameter describing spin qubits, and we extract this splitting from the data. We find it to be tunable by lateral displacement of the dot, which is realiz… ▽ More We measure the excited-state spectrum of a Si/SiGe quantum dot as a function of in-plane magnetic field, and we identify the spin of the lowest three eigenstates in an effective two-electron regime. The singlet-triplet splitting is an essential parameter describing spin qubits, and we extract this splitting from the data. We find it to be tunable by lateral displacement of the dot, which is realized by changing two gate voltages on opposite sides of the device. We present calculations showing the data are consistent with a spectrum in which the first excited state of the dot is a valley-orbit state. △ Less

Submitted 11 December, 2011; v1 submitted 2 September, 2011; originally announced September 2011.

Comments: 4 pages with 3 figures

Journal ref: Appl. Phys. Lett. 99, 233108 (2011)

Tunable spin-selective loading of a silicon spin qubit

Authors: C. B. Simmons, J. R. Prance, B. J. Van Bael, Teck Seng Koh, Zhan Shi, D. E. Savage, M. G. Lagally, R. Joynt, Mark Friesen, S. N. Coppersmith, M. A. Eriksson

Abstract: The remarkable properties of silicon have made it the central material for the fabrication of current microelectronic devices. Silicon's fundamental properties also make it an attractive option for the development of devices for spintronics and quantum information processing. The ability to manipulate and measure spins of single electrons is crucial for these applications. Here we report the manip… ▽ More The remarkable properties of silicon have made it the central material for the fabrication of current microelectronic devices. Silicon's fundamental properties also make it an attractive option for the development of devices for spintronics and quantum information processing. The ability to manipulate and measure spins of single electrons is crucial for these applications. Here we report the manipulation and measurement of a single spin in a quantum dot fabricated in a silicon/silicon-germanium heterostructure. We demonstrate that the rate of loading of electrons into the device can be tuned over an order of magnitude using a gate voltage, that the spin state of the loaded electron depends systematically on the loading voltage level, and that this tunability arises because electron spins can be loaded through excited orbital states of the quantum dot. The longitudinal spin relaxation time T1 is measured using single-shot pulsed techniques and found to be ~3 seconds at a field of 1.85 Tesla. The demonstration of single spin measurement as well as a long spin relaxation time and tunability of the loading are all favorable properties for spintronics and quantum information processing applications. △ Less

Submitted 27 October, 2010; originally announced October 2010.

Comments: 4 pages, 3 figures, Supplemental Information

Journal ref: Phys. Rev. Lett. 106, 156804 (2011)

Single-shot measurement and tunnel-rate spectroscopy of a Si/SiGe few-electron quantum dot

Authors: Madhu Thalakulam, C. B. Simmons, B. J. Van Bael, B. M. Rosemeyer, D. E. Savage, M. G. Lagally, Mark Friesen, S. N. Coppersmith, M. A. Eriksson

Abstract: We investigate the tunnel rates and energies of excited states of small numbers of electrons in a quantum dot fabricated in a Si/SiGe heterostructure. Tunnel rates for loading and unloading electrons are found to be strongly energy dependent, and they vary significantly between different excited states. We show that this phenomenon enables charge sensing measurements of the average electron occupa… ▽ More We investigate the tunnel rates and energies of excited states of small numbers of electrons in a quantum dot fabricated in a Si/SiGe heterostructure. Tunnel rates for loading and unloading electrons are found to be strongly energy dependent, and they vary significantly between different excited states. We show that this phenomenon enables charge sensing measurements of the average electron occupation that are analogous to Coulomb diamonds. Excited-state energies can be read directly from the plot, and we develop a rate model that enables a quantitative understanding of the relative sizes of different electron tunnel rates. △ Less

Submitted 13 July, 2011; v1 submitted 5 October, 2010; originally announced October 2010.

Comments: 9 pages

Journal ref: Phys. Rev. B 84, 045307 (2011)

Pauli spin blockade and lifetime-enhanced transport in a Si/SiGe double quantum dot

Authors: C. B. Simmons, Teck Seng Koh, Nakul Shaji, Madhu Thalakulam, L. J. Klein, Hua Qin, H. Luo, D. E. Savage, M. G. Lagally, A. J. Rimberg, Robert Joynt, Robert Blick, Mark Friesen, S. N. Coppersmith, M. A. Eriksson

Abstract: We analyze electron transport data through a Si/SiGe double quantum dot in terms of spin blockade and lifetime-enhanced transport (LET), which is transport through excited states that is enabled by long spin relaxation times. We present a series of low-bias voltage measurements showing the sudden appearance of a strong tail of current that we argue is an unambiguous signature of LET appearing when… ▽ More We analyze electron transport data through a Si/SiGe double quantum dot in terms of spin blockade and lifetime-enhanced transport (LET), which is transport through excited states that is enabled by long spin relaxation times. We present a series of low-bias voltage measurements showing the sudden appearance of a strong tail of current that we argue is an unambiguous signature of LET appearing when the bias voltage becomes greater than the singlet-triplet splitting for the (2,0) electron state. We present eight independent data sets, four in the forward bias (spin-blockade) regime and four in the reverse bias (lifetime-enhanced transport) regime, and show that all eight data sets can be fit to one consistent set of parameters. We also perform a detailed analysis of the reverse bias (LET) regime, using transport rate equations that include both singlet and triplet transport channels. The model also includes the energy dependent tunneling of electrons across the quantum barriers, and resonant and inelastic tunneling effects. In this way, we obtain excellent fits to the experimental data, and we obtain quantitative estimates for the tunneling rates and transport currents throughout the reverse bias regime. We provide a physical understanding of the different blockade regimes and present detailed predictions for the conditions under which LET may be observed. △ Less

Submitted 5 April, 2011; v1 submitted 31 August, 2010; originally announced August 2010.

Comments: published version, 18 pages

Journal ref: Phys. Rev. B 82, 245312 (2010)

Unconventional Transport in the "Hole" Regime of a Si Double Quantum Dot

Authors: Teck Seng Koh, C. B. Simmons, M. A. Eriksson, S. N. Coppersmith, Mark Friesen

Abstract: Studies of electronic charge transport through semiconductor double quantum dots rely on a conventional "hole" model of transport in the three-electron regime. We show that experimental measurements of charge transport through a Si double quantum dot in this regime cannot be fully explained using the conventional picture. Using a Hartree-Fock (HF) formalism and relevant HF energy parameters extrac… ▽ More Studies of electronic charge transport through semiconductor double quantum dots rely on a conventional "hole" model of transport in the three-electron regime. We show that experimental measurements of charge transport through a Si double quantum dot in this regime cannot be fully explained using the conventional picture. Using a Hartree-Fock (HF) formalism and relevant HF energy parameters extracted from transport data in the multiple-electron regime, we identify a novel spin-flip cotunneling process that lifts a singlet blockade. △ Less

Submitted 13 July, 2011; v1 submitted 30 August, 2010; originally announced August 2010.

Comments: Supplemental material included as an appendix

Journal ref: Phys. Rev. Lett. 106, 186801 (2011)

Fast tunnel rates in Si/SiGe one-electron single and double quantum dots

Authors: Madhu Thalakulam, C. B. Simmons, B. M. Rosemeyer, D. E. Savage, M. G. Lagally, Mark Friesen, S. N. Coppersmith, M. A. Eriksson

Abstract: We report the fabrication and measurement of one-electron single and double quantum dots with fast tunnel rates in a Si/SiGe heterostructure. Achieving fast tunnel rates in few-electron dots can be challenging, in part due to the large electron effective mass in Si. Using charge sensing, we identify signatures of tunnel rates in and out of the dot that are fast or slow compared to the measuremen… ▽ More We report the fabrication and measurement of one-electron single and double quantum dots with fast tunnel rates in a Si/SiGe heterostructure. Achieving fast tunnel rates in few-electron dots can be challenging, in part due to the large electron effective mass in Si. Using charge sensing, we identify signatures of tunnel rates in and out of the dot that are fast or slow compared to the measurement rate. Such signatures provide a means to calibrate the absolute electron number and verify single electron occupation. Pulsed gate voltage measurements are used to validate the approach. △ Less

Submitted 3 March, 2010; originally announced March 2010.

Comments: 4 pages, double column, 3 figures

Journal ref: Appl. Phys. Lett. 96, 183104 (2010)

Charge sensing and controllable tunnel coupling in a Si/SiGe double quantum dot

Authors: C. B. Simmons, Madhu Thalakulam, B. M. Rosemeyer, B. J. Van Bael, E. K. Sackmann, D. E. Savage, M. G. Lagally, R. Joynt, M. Friesen, S. N. Coppersmith, M. A. Eriksson

Abstract: We report integrated charge sensing measurements on a Si/SiGe double quantum dot. The quantum dot is shown to be tunable from a single, large dot to a well-isolated double dot. Charge sensing measurements enable the extraction of the tunnel coupling, t, between the quantum dots as a function of the voltage on the top gates defining the device. Control of the voltage on a single such gate tunes t… ▽ More We report integrated charge sensing measurements on a Si/SiGe double quantum dot. The quantum dot is shown to be tunable from a single, large dot to a well-isolated double dot. Charge sensing measurements enable the extraction of the tunnel coupling, t, between the quantum dots as a function of the voltage on the top gates defining the device. Control of the voltage on a single such gate tunes the barrier separating the two dots. The measured tunnel coupling is an exponential function of the gate voltage. The ability to control t is an important step towards controlling spin qubits in silicon quantum dots. △ Less

Submitted 11 May, 2009; originally announced May 2009.

Comments: 5 pages, 4 figures, submitted for publication

Journal ref: Nano Lett., 2009, 9 (9), pp 3234-3238

Single-electron quantum dot in Si/SiGe with integrated charge-sensing

Authors: C. B. Simmons, Madhu Thalakulam, Nakul Shaji, Levente J. Klein, Hua Qin, R. H. Blick, D. E. Savage, M. G. Lagally, S. N. Coppersmith, M. A. Eriksson

Abstract: Single-electron occupation is an essential component to measurement and manipulation of spin in quantum dots, capabilities that are important for quantum information processing. Si/SiGe is of interest for semiconductor spin qubits, but single-electron quantum dots have not yet been achieved in this system. We report the fabrication and measurement of a top-gated quantum dot occupied by a single… ▽ More Single-electron occupation is an essential component to measurement and manipulation of spin in quantum dots, capabilities that are important for quantum information processing. Si/SiGe is of interest for semiconductor spin qubits, but single-electron quantum dots have not yet been achieved in this system. We report the fabrication and measurement of a top-gated quantum dot occupied by a single electron in a Si/SiGe heterostructure. Transport through the quantum dot is directly correlated with charge-sensing from an integrated quantum point contact, and this charge-sensing is used to confirm single-electron occupancy in the quantum dot. △ Less

Submitted 1 November, 2007; v1 submitted 19 October, 2007; originally announced October 2007.

Comments: 3 pages, 3 figures, accepted version, to appear in Applied Physics Letters

Journal ref: Appl Phys Lett (2007) vol. 91 pp. 213103

Spin blockade and lifetime-enhanced transport in a few-electron Si/SiGe double quantum dot

Authors: Nakul Shaji, C. B. Simmons, Madhu Thalakulam, Levente J. Klein, Hua Qin, H. Luo, D. E. Savage, M. G. Lagally, A. J. Rimberg, R. Joynt, M. Friesen, R. H. Blick, S. N. Coppersmith, M. A. Eriksson

Abstract: Spin blockade occurs when an electron is unable to access an energetically favorable path through a quantum dot due to spin conservation, resulting in a blockade of the current through the dot. Spin blockade is the basis of a number of recent advances in spintronics, including the measurement and the manipulation of individual electron spins. We report measurements of the spin blockade regime in… ▽ More Spin blockade occurs when an electron is unable to access an energetically favorable path through a quantum dot due to spin conservation, resulting in a blockade of the current through the dot. Spin blockade is the basis of a number of recent advances in spintronics, including the measurement and the manipulation of individual electron spins. We report measurements of the spin blockade regime in a silicon double quantum dot, revealing a complementary phenomenon: lifetime-enhanced transport. We argue that our observations arise because the decay times for electron spins in silicon are long, enabling the electron to maintain its spin throughout its transit across the quantum dot and access fast paths that exist in some spin channels but not in others. Such long spin lifetimes are important for applications such as quantum computation and, more generally, spintronics. △ Less

Submitted 11 December, 2008; v1 submitted 6 August, 2007; originally announced August 2007.

Comments: Published version. Supplementary Information in appendices

Journal ref: Nature Physics v4, pp540-544 (2008)