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18 GHz Solidly Mounted Resonator in Scandium Aluminum Nitride on SiO2/Ta2O5 Bragg Reflector
Authors:
Omar Barrera,
Nishanth Ravi,
Kapil Saha,
Supratik Dasgupta,
Joshua Campbell,
Jack Kramer,
Eugene Kwon,
Tzu-Hsuan Hsu,
Sinwoo Cho,
Ian Anderson,
Pietro Simeoni,
Jue Hou,
Matteo Rinaldi,
Mark S. Goorsky,
Ruochen Lu
Abstract:
This work reports an acoustic solidly mounted resonator (SMR) at 18.64 GHz, among the highest operating frequencies reported. The device is built in scandium aluminum nitride (ScAlN) on top of silicon dioxide (SiO2) and tantalum pentoxide (Ta2O5) Bragg reflectors on silicon (Si) wafer. The stack is analyzed with X-ray reflectivity (XRR) and high-resolution X-ray diffraction (HRXRD). The resonator…
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This work reports an acoustic solidly mounted resonator (SMR) at 18.64 GHz, among the highest operating frequencies reported. The device is built in scandium aluminum nitride (ScAlN) on top of silicon dioxide (SiO2) and tantalum pentoxide (Ta2O5) Bragg reflectors on silicon (Si) wafer. The stack is analyzed with X-ray reflectivity (XRR) and high-resolution X-ray diffraction (HRXRD). The resonator shows a coupling coefficient (k2) of 2.0%, high series quality factor (Qs) of 156, shunt quality factor (Qp) of 142, and maximum Bode quality factor (Qmax) of 210. The third-order harmonics at 59.64 GHz is also observed with k2 around 0.6% and Q around 40. Upon further development, the reported acoustic resonator platform can enable various front-end signal-processing functions, e.g., filters and oscillators, at future frequency range 3 (FR3) bands.
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Submitted 2 July, 2024;
originally announced July 2024.
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Scandium Aluminum Nitride Overmoded Bulk Acoustic Resonators for Future Wireless Communication
Authors:
Walter Gubinelli,
Pietro Simeoni,
Ryan Tetro,
Luca Colombo,
Matteo Rinaldi
Abstract:
This work reports on the modeling, fabrication, and experimental characterization of a 13 GHz 30% Scandium-doped Aluminum Nitride (ScAlN) Overmoded Bulk Acoustic Resonator (OBAR) for high-frequency Radio Frequency (RF) applications, notably in 5G technology and beyond. The Finite Element Analysis (FEA) optimization process targets the top and bottom metal electrode thicknesses, balancing the elect…
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This work reports on the modeling, fabrication, and experimental characterization of a 13 GHz 30% Scandium-doped Aluminum Nitride (ScAlN) Overmoded Bulk Acoustic Resonator (OBAR) for high-frequency Radio Frequency (RF) applications, notably in 5G technology and beyond. The Finite Element Analysis (FEA) optimization process targets the top and bottom metal electrode thicknesses, balancing the electromechanical coupling coefficient and acoustic energy distribution to enhance device Figure of Merit (FOM). Experimental results on fabricated devices employing platinum and aluminum as bottom and top electrode, respectively, demonstrate a quality factor at resonance (Qs) of 210 and a coupling coefficient (kt2) of 5.2% at 13.3 GHz for the second bulk thickness overtone, effectively validating the simulation framework and hinting at the possible implementation of OBARs for advanced RF filters in 5G networks.
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Submitted 23 April, 2024;
originally announced April 2024.
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Millimeter Wave Thin-Film Bulk Acoustic Resonator in Sputtered Scandium Aluminum Nitride Using Platinum Electrodes
Authors:
Sinwoo Cho,
Omar Barrera,
Pietro Simeoni,
Ellie Y. Wang,
Jack Kramer,
Vakhtang Chulukhadze,
Joshua Campbell,
Matteo Rinaldi,
Ruochen Lu
Abstract:
This work describes sputtered scandium aluminum nitride (ScAlN) thin-film bulk acoustic resonators (FBAR) at millimeter wave (mmWave) with high quality factor (Q) using platinum (Pt) electrodes. FBARs with combinations of Pt and aluminum (Al) electrodes, i.e., Al top Al bottom, Pt top Al bottom, Al top Pt bottom, and Pt top Pt bottom, are built to study the impact of electrodes on mmWave FBARs. Th…
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This work describes sputtered scandium aluminum nitride (ScAlN) thin-film bulk acoustic resonators (FBAR) at millimeter wave (mmWave) with high quality factor (Q) using platinum (Pt) electrodes. FBARs with combinations of Pt and aluminum (Al) electrodes, i.e., Al top Al bottom, Pt top Al bottom, Al top Pt bottom, and Pt top Pt bottom, are built to study the impact of electrodes on mmWave FBARs. The demonstrated FBAR with Pt top and bottom electrodes achieve electromechanical coupling (k2) of 4.0% and Q of 116 for the first-order symmetric (S1) mode at 13.7 GHz, and k2 of 1.8% and Q of 94 for third-order symmetric (S3) mode at 61.6 GHz. Through these results, we confirmed that even in the frequency band of approximately 60 GHz, ScAlN FBAR can achieve a Q factor approaching 100 with optimized fabrication and acoustic/EM design. Further development calls for stacks with better quality in piezoelectric and metallic layers.
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Submitted 22 November, 2023;
originally announced November 2023.
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Millimeter Wave Thin-Film Bulk Acoustic Resonator in Sputtered Scandium Aluminum Nitride
Authors:
Sinwoo Cho,
Omar Barrera,
Pietro Simeoni,
Emily N. Marshall,
Jack Kramer,
Keisuke Motoki,
Tzu-Hsuan Hsu,
Vakhtang Chulukhadze,
Matteo Rinaldi,
W. Alan Doolittle,
Ruochen Lu
Abstract:
This work reports a millimeter wave (mmWave) thin-film bulk acoustic resonator (FBAR) in sputtered scandium aluminum nitride (ScAlN). This paper identifies challenges of frequency scaling sputtered ScAlN into mmWave and proposes a stack and new fabrication procedure with a sputtered Sc0.3Al0.7N on Al on Si carrier wafer. The resonator achieves electromechanical coupling (k2) of 7.0% and quality fa…
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This work reports a millimeter wave (mmWave) thin-film bulk acoustic resonator (FBAR) in sputtered scandium aluminum nitride (ScAlN). This paper identifies challenges of frequency scaling sputtered ScAlN into mmWave and proposes a stack and new fabrication procedure with a sputtered Sc0.3Al0.7N on Al on Si carrier wafer. The resonator achieves electromechanical coupling (k2) of 7.0% and quality factor (Q) of 62 for the first-order symmetric (S1) mode at 21.4 GHz, along with k2 of 4.0% and Q of 19 for the third-order symmetric (S3) mode at 55.4 GHz, showing higher figures of merit (FoM, k2xQ) than reported AlN/ScAlN-based mmWave acoustic resonators. The ScAlN quality is identified by transmission electron microscopy (TEM) and X-ray diffraction (XRD), identifying the bottlenecks in the existing piezoelectric-metal stack. Further improvement of ScAlN/AlN-based mmWave acoustic resonators calls for better crystalline quality from improved thin-film deposition methods.
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Submitted 6 September, 2023;
originally announced September 2023.
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A 5.3 GHz Al0.76Sc0.24N Two-Dimensional Resonant Rods Resonator with a kt2 of 23.9%
Authors:
Xuanyi Zhao,
Onurcan Kaya,
Michele Pirro,
Meruyert Assylbekova,
Luca Colombo,
Pietro Simeoni,
Cristian Cassella
Abstract:
This work reports on the measured performance of an Aluminum Scandium Nitride (AlScN) Two-Dimensional Resonant Rods resonator (2DRR), fabricated by using a Sc-do** concentration of 24%, characterized by a low off-resonance impedance (~25 Ohm) and exhibiting a record electromechanical coupling coefficient (kt2) of 23.9% for AlScN resonators. In order to achieve such performance, we identified and…
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This work reports on the measured performance of an Aluminum Scandium Nitride (AlScN) Two-Dimensional Resonant Rods resonator (2DRR), fabricated by using a Sc-do** concentration of 24%, characterized by a low off-resonance impedance (~25 Ohm) and exhibiting a record electromechanical coupling coefficient (kt2) of 23.9% for AlScN resonators. In order to achieve such performance, we identified and relied on optimized deposition and etching processes for highly-doped AlScN films, aiming at achieving high crystalline quality, low density of abnormally oriented grains in the 2DRR's active region and sharp lateral sidewalls. Also, the 2DRR's unit-cell has been acoustically engineered to maximize the piezo-generated mechanical energy within each rod and to ensure a low transduction of spurious modes around resonance. Due to its unprecedented kt2, the reported 2DRR opens exciting scenarios towards the development of next generation monolithic integrated radio-frequency (RF) filtering components. In fact, we show that 5th-order 2DRR-based ladder filters with fractional bandwidths (BW) of ~11%, insertion-loss (I.L) values of ~2.5 dB and with >30 dB out-of-band rejections can now be envisioned, paving an unprecedented path towards the development of ultra-wide band (UWB) filters for next-generation Super-High-Frequency (SHF) radio front-ends.
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Submitted 11 April, 2022; v1 submitted 22 February, 2022;
originally announced February 2022.
