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Coherent Control of an Optical Quantum Dot Using Phonons and Photons
Authors:
Ryan A DeCrescent,
Zixuan Wang,
Joseph T Bush,
Poolad Imany,
Alex Kwiatkowski,
Dileep V Reddy,
Sae Woo Nam,
Richard P Mirin,
Kevin L Silverman
Abstract:
Genuine quantum-mechanical effects are readily observable in modern optomechanical systems comprising bosonic ("classical") optical resonators. Here we describe unique features and advantages of optical two-level systems, or qubits, for optomechanics. The qubit state can be coherently controlled using both phonons and resonant or detuned photons. We experimentally demonstrate this using charge-con…
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Genuine quantum-mechanical effects are readily observable in modern optomechanical systems comprising bosonic ("classical") optical resonators. Here we describe unique features and advantages of optical two-level systems, or qubits, for optomechanics. The qubit state can be coherently controlled using both phonons and resonant or detuned photons. We experimentally demonstrate this using charge-controlled InAs quantum dots (QDs) in surface-acoustic-wave resonators. Time-correlated single-photon counting measurements reveal the control of QD population dynamics using engineered optical pulses and mechanical motion. As a first example, at moderate acoustic drive strengths, we demonstrate the potential of this technique to maximize fidelity in quantum microwave-to-optical transduction. Specifically, we tailor the scheme so that mechanically assisted photon scattering is enhanced over the direct detuned photon scattering from the QD. Spectral analysis reveals distinct scattering channels related to Rayleigh scattering and luminescence in our pulsed excitation measurements which lead to time-dependent scattering spectra. Quantum-mechanical calculations show good agreement with our experimental results, together providing a comprehensive description of excitation, scattering and emission in a coupled QD-phonon optomechanical system.
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Submitted 16 May, 2024; v1 submitted 2 April, 2024;
originally announced April 2024.
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Gated InAs quantum dots embedded in surface acoustic wave cavities for low-noise optomechanics
Authors:
Zixuan Wang,
Ryan A. DeCrescent,
Poolad Imany,
Joseph T. Bush,
Dileep V. Reddy,
Sae Woo Nam,
Richard P. Mirin,
Kevin L. Silverman
Abstract:
Self-assembled InAs quantum dots (QDs) are promising optomechanical elements due to their excellent photonic properties and sensitivity to local strain fields. Microwave-frequency modulation of photons scattered from these efficient quantum emitters has been recently demonstrated using surface acoustic wave (SAW) cavities. However, for optimal performance, a gate structure is required to determini…
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Self-assembled InAs quantum dots (QDs) are promising optomechanical elements due to their excellent photonic properties and sensitivity to local strain fields. Microwave-frequency modulation of photons scattered from these efficient quantum emitters has been recently demonstrated using surface acoustic wave (SAW) cavities. However, for optimal performance, a gate structure is required to deterministically control the charge state and reduce charge noise of the QDs. Here, we integrate gated QDs and SAW cavities using molecular beam epitaxy and nanofabrication. We demonstrate that with careful design of the substrate layer structure, integration of the two systems can be accomplished while retaining the optimal performance of each subsystem. These results mark a critical step toward efficient and low-noise optomechanical systems for microwave-to-optical quantum transduction.
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Submitted 15 December, 2023;
originally announced December 2023.
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Monolithic Polarizing Circular Dielectric Gratings on Bulk Substrates for Improved Photon Collection from InAs Quantum Dots
Authors:
Ryan A. DeCrescent,
Zixuan Wang,
Poolad Imany,
Sae Woo Nam,
Richard P. Mirin,
Kevin L. Silverman
Abstract:
III-V semiconductor quantum dots (QDs) are near-ideal and versatile single-photon sources. Because of the capacity for monolithic integration with photonic structures as well as optoelectronic and optomechanical systems, they are proving useful in an increasingly broad application space. Here, we develop monolithic circular dielectric gratings on bulk substrates -- as opposed to suspended or wafer…
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III-V semiconductor quantum dots (QDs) are near-ideal and versatile single-photon sources. Because of the capacity for monolithic integration with photonic structures as well as optoelectronic and optomechanical systems, they are proving useful in an increasingly broad application space. Here, we develop monolithic circular dielectric gratings on bulk substrates -- as opposed to suspended or wafer-bonded substrates -- for greatly improved photon collection from InAs quantum dots. The structures utilize a unique two-tiered distributed Bragg reflector (DBR) structure for vertical electric field confinement over a broad angular range. Opposing ``openings" in the cavities induce strongly polarized QD luminescence without harming collection efficiencies. We describe how measured enhancements depend critically on the choice of collection optics. This is important to consider when evaluating the performance of any photonic structure that concentrates farfield emission intensity. Our cavity designs are useful for integrating QDs with other quantum systems that require bulk substrates, such as surface acoustic wave phonons.
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Submitted 6 October, 2023; v1 submitted 2 October, 2023;
originally announced October 2023.
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Large Single-Phonon Optomechanical Coupling between Quantum Dots and Tightly Confined Surface Acoustic Waves in the Quantum Regime
Authors:
Ryan A. DeCrescent,
Zixuan Wang,
Poolad Imany,
Robert C. Boutelle,
Corey A. McDonald,
Travis Autry,
John D. Teufel,
Sae Woo Nam,
Richard P. Mirin,
Kevin L. Silverman
Abstract:
Surface acoustic waves (SAWs) coupled to quantum dots (QDs), trapped atoms and ions, and point defects have been proposed as quantum transduction platforms, yet the requisite coupling rates and cavity lifetimes have not been experimentally established. Although the interaction mechanism varies, small acoustic cavities with large zero-point motion are required for high efficiencies. We experimental…
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Surface acoustic waves (SAWs) coupled to quantum dots (QDs), trapped atoms and ions, and point defects have been proposed as quantum transduction platforms, yet the requisite coupling rates and cavity lifetimes have not been experimentally established. Although the interaction mechanism varies, small acoustic cavities with large zero-point motion are required for high efficiencies. We experimentally establish the feasibility of this platform through electro- and opto-mechanical characterization of tightly focusing, single-mode Gaussian SAW cavities at $\sim$3.6 GHz on GaAs. We explore the performance limits of the platform by fabricating SAW cavities with mode volumes approaching 6$λ^3$ and linewidths $\leq$1 MHz. Employing strain-coupled single InAs QDs as optomechanical intermediaries, we measure single-phonon optomechanical coupling rates $g_0 \approx 2π\times 1.2$ MHz. Sideband scattering rates thus exceed intrinsic phonon loss, indicating the potential for quantum optical readout and transduction of cavity phonon states. To demonstrate the feasibility of this platform for low-noise ground-state quantum transduction, we develop a fiber-based confocal microscope in a dilution refrigerator and perform single-QD resonance fluorescence sideband spectroscopy at mK temperatures. These measurements show conversion between microwave phonons and optical photons with sub-natural linewidths.
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Submitted 24 August, 2022; v1 submitted 2 May, 2022;
originally announced May 2022.
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Modeling Short-Range Microwave Networks to Scale Superconducting Quantum Computation
Authors:
Nicholas LaRacuente,
Kaitlin N. Smith,
Poolad Imany,
Kevin L. Silverman,
Frederic T. Chong
Abstract:
A core challenge for superconducting quantum computers is to scale up the number of qubits in each processor without increasing noise or cross-talk. Distributed quantum computing across small qubit arrays, known as chiplets, can address these challenges in a scalable manner. We propose a chiplet architecture over microwave links with potential to exceed monolithic performance on near-term hardware…
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A core challenge for superconducting quantum computers is to scale up the number of qubits in each processor without increasing noise or cross-talk. Distributed quantum computing across small qubit arrays, known as chiplets, can address these challenges in a scalable manner. We propose a chiplet architecture over microwave links with potential to exceed monolithic performance on near-term hardware. Our methods of modeling and evaluating the chiplet architecture bridges the physical and network layers in these processors. We find evidence that distributing computation across chiplets may reduce the overall error rates associated with moving data across the device, despite higher error figures for transfers across links. Preliminary analyses suggest that latency is not substantially impacted, and that at least some applications and architectures may avoid bottlenecks around chiplet boundaries. In the long-term, short-range networks may underlie quantum computers just as local area networks underlie classical datacenters and supercomputers today.
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Submitted 5 January, 2023; v1 submitted 21 January, 2022;
originally announced January 2022.
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Quantum phase modulation with acoustic cavities and quantum dots
Authors:
Poolad Imany,
Zixuan Wang,
Ryan A. Decrescent,
Robert C. Boutelle,
Corey A. Mcdonald,
Travis Autry,
Samuel Berweger,
Pavel Kabos,
Sae Woo Nam,
Richard P. Mirin,
Kevin L. Silverman
Abstract:
Fast, efficient, and low power modulation of light at microwave frequencies is crucial for chip-scale classical and quantum processing as well as for long-range networks of superconducting quantum processors. A successful approach to bridge the gap between microwave and optical photons has been to use intermediate platforms such as acoustic waves, which can couple efficiently to a variety of quant…
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Fast, efficient, and low power modulation of light at microwave frequencies is crucial for chip-scale classical and quantum processing as well as for long-range networks of superconducting quantum processors. A successful approach to bridge the gap between microwave and optical photons has been to use intermediate platforms such as acoustic waves, which can couple efficiently to a variety of quantum systems. Here, we use gigahertz-frequency focusing surface acoustic wave cavities on GaAs that are piezo-electrically coupled to superconducting circuits and parametrically coupled, via strain, to photons scattered from InAs quantum dots . We demonstrate strong modulation of single photons with a half-wave voltage as low as 44 mV, and subnatural modulation sideband linewidths. These demonstrations pave the way for efficient and low-noise transduction of quantum information between microwave and optical domains.
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Submitted 16 December, 2021;
originally announced December 2021.
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Optimization of photoluminescence from W centers in silicon-on-insulator
Authors:
Sonia M. Buckley,
Alex N. Tait,
Galan Moody,
Stephen Olson,
Joshua Herman,
Kevin L. Silverman,
Satyavolu Papa Rao,
Sae Woo Nam,
Richard P. Mirin,
Jeffrey M. Shainline
Abstract:
W centers are trigonal defects generated by self-ion implantation in silicon that exhibit photoluminescence at 1.218 $μ$m. We have shown previously that they can be used in waveguide-integrated all-silicon light-emitting diodes (LEDs). Here we optimize the implant energy, fluence and anneal conditions to maximize the photoluminescence intensity for W centers implanted in silicon-on-insulator, a su…
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W centers are trigonal defects generated by self-ion implantation in silicon that exhibit photoluminescence at 1.218 $μ$m. We have shown previously that they can be used in waveguide-integrated all-silicon light-emitting diodes (LEDs). Here we optimize the implant energy, fluence and anneal conditions to maximize the photoluminescence intensity for W centers implanted in silicon-on-insulator, a substrate suitable for waveguide-integrated devices. After optimization, we observe near two orders of magnitude improvement in photoluminescence intensity relative to the conditions with the stop** range of the implanted ions at the center of the silicon device layer. The previously demonstrated waveguide-integrated LED used implant conditions with the stop** range at the center of this layer. We further show that such light sources can be manufactured at the 300-mm scale by demonstrating photoluminescence of similar intensity from 300 mm silicon-on-insulator wafers. The luminescence uniformity across the entire wafer is within the measurement error.
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Submitted 19 May, 2020; v1 submitted 4 November, 2019;
originally announced November 2019.
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Microsecond Valley Lifetime of Defect-Bound Excitons in Monolayer WSe$_2$
Authors:
Galan Moody,
Kha Tran,
Xiaobo Lu,
Travis Autry,
James M. Fraser,
Richard P. Mirin,
Li Yang,
Xiaoqin Li,
Kevin L. Silverman
Abstract:
In atomically thin two-dimensional semiconductors such as transition metal dichalcogenides (TMDs), controlling the density and type of defects promises to be an effective approach for engineering light-matter interactions. We demonstrate that electron-beam irradiation is a simple tool for selectively introducing defect-bound exciton states associated with chalcogen vacancies in TMDs. Our first-pri…
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In atomically thin two-dimensional semiconductors such as transition metal dichalcogenides (TMDs), controlling the density and type of defects promises to be an effective approach for engineering light-matter interactions. We demonstrate that electron-beam irradiation is a simple tool for selectively introducing defect-bound exciton states associated with chalcogen vacancies in TMDs. Our first-principles calculations and time-resolved spectroscopy measurements of monolayer WSe2 reveal that these defect-bound excitons exhibit exceptional optical properties including a recombination lifetime approaching 200 ns and a valley lifetime longer than 1 $μ$s. The ability to engineer the crystal lattice through electron irradiation provides a new approach for tailoring the optical response of TMDs for photonics, quantum optics, and valleytronics applications.
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Submitted 10 July, 2018;
originally announced July 2018.
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Moiré Excitons in Van der Waals Heterostructures
Authors:
Kha Tran,
Galan Moody,
Fengcheng Wu,
Xiaobo Lu,
Junho Choi,
Akshay Singh,
Jacob Embley,
André Zepeda,
Marshall Campbell,
Kyounghwan Kim,
Amritesh Rai,
Travis Autry,
Daniel A. Sanchez,
Takashi Taniguchi,
Kenji Watanabe,
Nanshu Lu,
Sanjay K. Banerjee,
Emanuel Tutuc,
Li Yang,
Allan H. MacDonald,
Kevin L. Silverman,
Xiaoqin Li
Abstract:
In van der Waals (vdW) heterostructures formed by stacking two monolayer semiconductors, lattice mismatch or rotational misalignment introduces an in-plane moiré superlattice. While it is widely recognized that a moiré superlattice can modulate the electronic band structure and lead to novel transport properties including unconventional superconductivity and insulating behavior driven by correlati…
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In van der Waals (vdW) heterostructures formed by stacking two monolayer semiconductors, lattice mismatch or rotational misalignment introduces an in-plane moiré superlattice. While it is widely recognized that a moiré superlattice can modulate the electronic band structure and lead to novel transport properties including unconventional superconductivity and insulating behavior driven by correlations, its influence on optical properties has not been investigated experimentally. We present spectroscopic evidence that interlayer excitons are confined by the moiré potential in a high-quality MoSe2/WSe2 heterobilayer with small rotational twist. A series of interlayer exciton resonances with either positive or negative circularly polarized emission is observed in photoluminescence, consistent with multiple exciton states confined within the moiré potential. The recombination dynamics and temperature dependence of these interlayer exciton resonances are consistent with this interpretation. These results demonstrate the feasibility of engineering artificial excitonic crystals using vdW heterostructures for nanophotonics and quantum information applications.
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Submitted 10 July, 2018;
originally announced July 2018.
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Demonstrating sub-3 ps temporal resolution in a superconducting nanowire single-photon detector
Authors:
B. A. Korzh,
Q-Y. Zhao,
S. Frasca,
J. P. Allmaras,
T. M. Autry,
E. A. Bersin,
M. Colangelo,
G. M. Crouch,
A. E. Dane,
T. Gerrits,
F. Marsili,
G. Moody,
E. Ramirez,
J. D. Rezac,
M. J. Stevens,
E. E. Wollman,
D. Zhu,
P. D. Hale,
K. L. Silverman,
R. P. Mirin,
S. W. Nam,
M. D. Shaw,
K. K. Berggren
Abstract:
Improving the temporal resolution of single photon detectors has an impact on many applications, such as increased data rates and transmission distances for both classical and quantum optical communication systems, higher spatial resolution in laser ranging and observation of shorter-lived fluorophores in biomedical imaging. In recent years, superconducting nanowire single-photon detectors (SNSPDs…
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Improving the temporal resolution of single photon detectors has an impact on many applications, such as increased data rates and transmission distances for both classical and quantum optical communication systems, higher spatial resolution in laser ranging and observation of shorter-lived fluorophores in biomedical imaging. In recent years, superconducting nanowire single-photon detectors (SNSPDs) have emerged as the highest efficiency time-resolving single-photon counting detectors available in the near infrared. As the detection mechanism in SNSPDs occurs on picosecond time scales, SNSPDs have been demonstrated with exquisite temporal resolution below 15 ps. We reduce this value to 2.7$\pm$0.2 ps at 400 nm and 4.6$\pm$0.2 ps at 1550 nm, using a specialized niobium nitride (NbN) SNSPD. The observed photon-energy dependence of the temporal resolution and detection latency suggests that intrinsic effects make a significant contribution.
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Submitted 18 April, 2018;
originally announced April 2018.
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All-silicon light-emitting diodes waveguide-integrated with superconducting single-photon detectors
Authors:
Sonia Buckley,
Jeffrey Chiles,
Adam N. McCaughan,
Galan Moody,
Kevin L. Silverman,
Martin J. Stevens,
Richard P. Mirin,
Sae Woo Nam,
Jeffrey M. Shainline
Abstract:
We demonstrate cryogenic, electrically-injected, waveguide-coupled Si light-emitting diodes (LEDs) operating at 1.22 $μ$m. The active region of the LED consists of W centers implanted in the intrinsic region of a $p$-$i$-$n$ diode. The LEDs are integrated on waveguides with superconducting nanowire single-photon detectors (SNSPDs). We demonstrate the scalability of this platform with an LED couple…
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We demonstrate cryogenic, electrically-injected, waveguide-coupled Si light-emitting diodes (LEDs) operating at 1.22 $μ$m. The active region of the LED consists of W centers implanted in the intrinsic region of a $p$-$i$-$n$ diode. The LEDs are integrated on waveguides with superconducting nanowire single-photon detectors (SNSPDs). We demonstrate the scalability of this platform with an LED coupled to eleven SNSPDs in a single integrated photonic device. Such on-chip optical links may be useful for quantum information or neuromorphic computing applications.
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Submitted 6 July, 2017;
originally announced August 2017.
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Optical amplitude and phase modulation dynamics at the single-photon level in a quantum dot ridge waveguide
Authors:
Galan Moody,
Corey McDonald,
Ari Feldman,
Todd Harvey,
Richard P. Mirin,
Kevin L. Silverman
Abstract:
The amplitude and phase of a material's nonlinear optical response provide insight into the underlying electronic dynamics that determine its optical properties. Phase-sensitive nonlinear spectroscopy techniques are widely implemented to explore these dynamics through demodulation of the complex optical signal field into its quadrature components; however, complete reconstruction of the optical re…
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The amplitude and phase of a material's nonlinear optical response provide insight into the underlying electronic dynamics that determine its optical properties. Phase-sensitive nonlinear spectroscopy techniques are widely implemented to explore these dynamics through demodulation of the complex optical signal field into its quadrature components; however, complete reconstruction of the optical response requires measuring both the amplitude and phase of each quadrature, which is often lost in standard detection methods. Here, we implement a heterodyne-detection scheme to fully reconstruct the amplitude and phase response of spectral hole-burning from InAs/GaAs charged quantum dots. We observe an ultra-narrow absorption profile and a corresponding dispersive lineshape of the phase, which reflect the nanosecond optical coherence time of the charged exciton transition. Simultaneously, the measurements are sensitive to electron spin relaxation dynamics on a millisecond timescale, as this manifests as a magnetic-field dependent delay of the amplitude and phase modulation. Appreciable amplitude modulation depth and nonlinear phase shift up to 0.09$\timesπ$ radians (16$°$) are demonstrated, providing new possibilities for quadrature modulation at faint photon levels with several independent control parameters, including photon number, modulation frequency, detuning, and externally applied fields.
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Submitted 26 August, 2016;
originally announced August 2016.
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Electronic Coherence Control in a Charged Quantum Dot
Authors:
Galan Moody,
Corey McDonald,
Ari Feldman,
Todd Harvey,
Richard P. Mirin,
Kevin L. Silverman
Abstract:
Minimizing decoherence due to coupling of a quantum system to its fluctuating environment is at the forefront of quantum information science and photonics research. Nature sets the ultimate limit, however, given by the strength of the system's coupling to the electromagnetic field. Here, we establish the ability to electronically control this coupling and $\textit{enhance}$ the coherence time of a…
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Minimizing decoherence due to coupling of a quantum system to its fluctuating environment is at the forefront of quantum information science and photonics research. Nature sets the ultimate limit, however, given by the strength of the system's coupling to the electromagnetic field. Here, we establish the ability to electronically control this coupling and $\textit{enhance}$ the coherence time of a quantum dot excitonic state. Coherence control is demonstrated on the positively charged exciton transition (an electron Coulomb-bound with two holes) in quantum dots embedded in a photonic waveguide by manipulating the electron and hole wavefunctions through an applied lateral electric field. With increasing field up to 15 kV cm$^{-1}$, the coherence time increases by a factor of two from $\sim1.4$ ns to $\sim2.7$ ns. Numerical calculations reveal that longer coherence arises from the separation of charge carriers by up to $\sim6$ nm, which leads to a $30\%$ weaker transition dipole moment. The ability to electrostatically control the coherence time and transition dipole moment opens new avenues for quantum communication and novel coupling schemes between distant qubits.
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Submitted 19 October, 2015;
originally announced October 2015.
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Homogeneous Linewidth Narrowing of the Charged Exciton via Nuclear Spin Screening in an InAs/GaAs Quantum Dot Ensemble
Authors:
G. Moody,
M. Feng,
C. McDonald,
R. P. Mirin,
K. L. Silverman
Abstract:
In semiconductor quantum dots, the electron hyperfine interaction with the nuclear spin bath is the leading source of spin decoherence at cryogenic temperature. Using high-resolution two-color differential transmission spectroscopy, we demonstrate that such electron-nuclear coupling also imposes a lower limit for the positively charged exciton dephasing rate, γ, in an ensemble of InAs/GaAs quantum…
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In semiconductor quantum dots, the electron hyperfine interaction with the nuclear spin bath is the leading source of spin decoherence at cryogenic temperature. Using high-resolution two-color differential transmission spectroscopy, we demonstrate that such electron-nuclear coupling also imposes a lower limit for the positively charged exciton dephasing rate, γ, in an ensemble of InAs/GaAs quantum dots. We find that the dephasing rate is sensitive to the strength of the hyperfine interaction, which can be controlled through the application of an external magnetic field in the Faraday configuration. At zero applied field, strong electron-nuclear coupling induces additional dephasing beyond the radiative limit and γ= 230 MHz (0.95 μeV). Screening of the hyperfine interaction is achieved for an external field of ~1 T, resulting in γ= 172 MHz (0.71 μeV) limited only by spontaneous recombination. On the other hand, application of a Voigt magnetic field mixes the spin eigenstates, which increases the dephasing rate by up to 75%. These results are reproduced with a simple and intuitive model that captures the essential features of the electron hyperfine interaction and its influence on γ.
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Submitted 29 September, 2014;
originally announced September 2014.
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Multidimensional Coherent Photocurrent Spectroscopy of a Semiconductor Nanostructure
Authors:
Gaël Nardin,
Travis M. Autry,
Kevin L. Silverman,
Steven T. Cundiff
Abstract:
Multidimensional Coherent Optical Photocurrent Spectroscopy (MD-COPS) is implemented using unstabilized interferometers. Photocurrent from a semiconductor sample is generated using a sequence of four excitation pulses in a collinear geometry. Each pulse is tagged with a unique radio frequency through acousto-optical modulation ; the Four-Wave Mixing (FWM) signal is then selected in the frequency d…
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Multidimensional Coherent Optical Photocurrent Spectroscopy (MD-COPS) is implemented using unstabilized interferometers. Photocurrent from a semiconductor sample is generated using a sequence of four excitation pulses in a collinear geometry. Each pulse is tagged with a unique radio frequency through acousto-optical modulation ; the Four-Wave Mixing (FWM) signal is then selected in the frequency domain. The interference of an auxiliary continuous wave laser, which is sent through the same interferometers as the excitation pulses, is used to synthesize reference frequencies for lock-in detection of the photocurrent FWM signal. This scheme enables the partial compensation of mechanical fluctuations in the setup, achieving sufficient phase stability without the need for active stabilization. The method intrinsically provides both the real and imaginary parts of the FWM signal as a function of inter-pulse delays. This signal is subsequently Fourier transformed to create a multi-dimensional spectrum. Measurements made on the excitonic resonance in a double InGaAs quantum well embedded in a p-i-n diode demonstrate the technique.
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Submitted 16 September, 2013;
originally announced September 2013.
