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Optical properties and plasmons in moiré structures
Authors:
Xueheng Kuang,
Pierre A. Pantaleón Peralta,
Jose Angel Silva-Guillén,
Shengjun Yuan,
Francisco Guinea,
Zhen Zhan
Abstract:
The discoveries of numerous exciting phenomena in twisted bilayer graphene (TBG) are stimulating significant investigations on moiré structures that possess a tunable moiré potential. Optical response can provide insights into the electronic structures and transport phenomena of non-twisted and twisted moiré structures. In this article, we review both experimental and theoretical studies of optica…
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The discoveries of numerous exciting phenomena in twisted bilayer graphene (TBG) are stimulating significant investigations on moiré structures that possess a tunable moiré potential. Optical response can provide insights into the electronic structures and transport phenomena of non-twisted and twisted moiré structures. In this article, we review both experimental and theoretical studies of optical properties such as optical conductivity, dielectric function, non-linear optical response, and plasmons in moiré structures composed of graphene, hexagonal boron nitride (hBN), and/or transition metal dichalcogenides (TMDCs). Firstly, a comprehensive introduction to the widely employed methodology on optical properties is presented. After, moiré potential induced optical conductivity and plasmons in non-twisted structures are reviewed, such as single layer graphene-hBN, bilayer graphene-hBN and graphene-metal moiré heterostructures. Next, recent investigations of twist-angle dependent optical response and plasmons are addressed in twisted moiré structures. Additionally, we discuss how optical properties and plasmons could contribute to the understanding of the many-body effects and superconductivity observed in moiré structures.
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Submitted 17 January, 2024;
originally announced January 2024.
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Flat-band optical phonons in twisted bilayer graphene
Authors:
Emmanuele Cappelluti,
Jose Angel Silva-Guillén,
Habib Rostami,
Francisco Guinea
Abstract:
Twisting bilayer sheets of graphene have been proven to be an efficient way to manipulate the electronic Dirac-like properties, resulting in flat bands at magic angles. Inspired by the electronic model, we develop a continuum model for the lattice dynamics of twisted bilayer graphene and we show that a remarkable band flattening applies to almost all the high-frequency in-plane lattice vibration m…
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Twisting bilayer sheets of graphene have been proven to be an efficient way to manipulate the electronic Dirac-like properties, resulting in flat bands at magic angles. Inspired by the electronic model, we develop a continuum model for the lattice dynamics of twisted bilayer graphene and we show that a remarkable band flattening applies to almost all the high-frequency in-plane lattice vibration modes, including the valley Dirac phonon, valley optical phonon, and zone-center optical phonon bands. Utilizing an approximate approach, we estimate small but finite magic angles at which a vanishing phonon bandwidth is expected. In contrast to the electronic case, the existence of a restoring potential prohibits the emergence of a magic angle in a more accurate modeling. The predicted phonon band-flattening is highly tunable by the twist angle and this strong dependence is directly accessible by spectroscopic tools.
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Submitted 3 March, 2023;
originally announced March 2023.
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Experimental demonstration of a magnetically induced war** transition in a topological insulator mediated by rare-earth surface dopants
Authors:
Beatriz Muñiz Cano,
Yago Ferreiros,
Pierre A. Pantaleón,
Ji Dai,
Massimo Tallarida,
Adriana I. Figueroa,
Vera Marinova,
Kevin García Díez,
Aitor Mugarza,
Sergio O. Valenzuela,
Rodolfo Miranda,
Julio Camarero,
Francisco Guinea,
Jose Angel Silva-Guillén,
Miguel A. Valbuena
Abstract:
Magnetic topological insulators (MTI) constitute a novel class of materials where the topologically protected band structure coexists with long-range ferromagnetic order, which can lead to the breaking of time-reversal symmetry (TRS), introducing a bandgap in the Dirac cone-shaped topological surface state (TSS). The gap opening in MITs has been predicted to be accompanied by a distortion in the T…
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Magnetic topological insulators (MTI) constitute a novel class of materials where the topologically protected band structure coexists with long-range ferromagnetic order, which can lead to the breaking of time-reversal symmetry (TRS), introducing a bandgap in the Dirac cone-shaped topological surface state (TSS). The gap opening in MITs has been predicted to be accompanied by a distortion in the TSS, evolving its warped shape from hexagonal to trigonal. In this work, we demonstrate such a transition by means of angle-resolved photoemission spectroscopy after the deposition of low concentrations of magnetic rare earths, namely Er and Dy, on the ternary three-dimensional prototypical topological insulator Bi$_2$Se$_2$Te. Signatures of the gap opening occurring as a consequence of the TRS breaking have also been observed, whose existence is supported by the observation of the aforementioned transition. Moreover, increasing the Er coverage results in a tunable p-type do** of the TSS. As a consequence, the Fermi level (E$_{\textrm{F}}$) of our Bi$_2$Se$_2$Te crystals can be gradually tuned towards the TSS Dirac point, and therefore to the magnetically induced bandgap; thus fulfilling two of the necessary prerequisites for the realization of the quantum anomalous Hall effect (QAHE) in this system. The experimental results are rationalized by a theoretical model where a magnetic Zeeman out-of-plane term is introduced in the hamiltonian governing the TSS band dispersion. Our results offer new strategies to control magnetic interactions with TSSs based on a simple approach and open up viable routes for the realization of the QAHE.
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Submitted 3 February, 2023;
originally announced February 2023.
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Metastable polymorphic phases in monolayer TaTe2
Authors:
Iolanda Di Bernardo,
Joan Ripoll-Sau,
Fabian Calleja,
Cosme G. Ayani,
Rodolfo Miranda,
Jose Angel Silva-Guillen,
Enric Canadell,
Manuela Garnica,
Amadeo L. Vazquez de Parga
Abstract:
Polymorphic phases and collective phenomena - such as charge density waves (CDWs) - in transition metal dichalcogenides (TMDs) dictate the physical and electronic properties of the material. Most TMDs naturally occur in a single given phase, but the fine-tuning of growth conditions via methods like molecular beam epitaxy (MBE) allows to unlock otherwise inaccessible polymorphic structures. Explori…
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Polymorphic phases and collective phenomena - such as charge density waves (CDWs) - in transition metal dichalcogenides (TMDs) dictate the physical and electronic properties of the material. Most TMDs naturally occur in a single given phase, but the fine-tuning of growth conditions via methods like molecular beam epitaxy (MBE) allows to unlock otherwise inaccessible polymorphic structures. Exploring and understanding the morphological and electronic properties of new phases of TMDs is an essential step to enable their exploitation in technological applications. Here, we use scanning tunneling microscopy to map MBE-grown monolayer TaTe2. We report the first observation of the 1H polymorphic phase, coexisting with the 1T, and demonstrate that their relative coverage can be controlled by adjusting synthesis parameters. Several super-periodic structures, compatible with CDWs, are observed to coexist on the 1T phase. Finally, we provide theoretical insight on the delicate balance between Te...Te and Ta-Ta interactions that dictates the stability of the different phases. Our findings demonstrate that TaTe2 is an ideal platform to investigate competing interactions, and indicate that accurate tuning of growth conditions is key to accessing metastable states in TMDs.
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Submitted 16 January, 2023;
originally announced January 2023.
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Electronic properties of twisted bilayer graphene suspended and encapsulated with hexagonal boron nitride
Authors:
Min Long,
Zhen Zhan,
Pierre A. Pantaleón,
Jose Ángel Silva-Guillén,
Francisco Guinea,
Shengjun Yuan
Abstract:
The recent observed anomalous Hall effect in magic angle twisted bilayer graphene (TBG) aligned to hexagonal boron nitride (hBN) and unconventional ferroelectricity in Bernal bilayer graphene sandwiched by hBN present a new platform to tune the correlated properties in graphene systems. In these graphene-based moiré superlattices, the aligned hBN substrate plays an important role. In this paper, w…
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The recent observed anomalous Hall effect in magic angle twisted bilayer graphene (TBG) aligned to hexagonal boron nitride (hBN) and unconventional ferroelectricity in Bernal bilayer graphene sandwiched by hBN present a new platform to tune the correlated properties in graphene systems. In these graphene-based moiré superlattices, the aligned hBN substrate plays an important role. In this paper, we analyze the effects of hBN substrate on the band structure of the TBG. By means of an atomistic tight-binding model we calculate the electronic properties of TBG suspended and encapsulated with hBN. Interestingly, we found that the physical properties of TBG are extremely sensitive to the presence of hBN and they may be completely different if TBG is suspended or encapsulated. We quantify these differences by analysing their electronic properties, optical conductivity and band topology. We found that the narrow bandwidth, band gap, local density of states and optical conductivity are significantly modified by the aligned hBN substrates. Interestingly, these electronic properties can be used as a signature of the alignment in experiment. Moreover, the TBG/hBN superlattices in the presence or absence of the two-fold rotation symmetry response differently to the external electric field. For the TBG suspended in the hBN, application of an electric field results in the charge unevenly distributed between graphene layers, which can be used to tune the strength of the valley Hall effect or the anomalous Hall effect. Such rich topological phase diagram in these systems may be useful for experiments.
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Submitted 30 November, 2022;
originally announced November 2022.
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An accurate description of the structural and electronic properties of twisted bilayer graphene-boron nitride heterostructures
Authors:
Min Long,
Pierre A. Pantaleón,
Zhen Zhan,
Francisco Guinea,
Jose Ángel Silva-Guillén,
Shengjun Yuan
Abstract:
Twisted bilayer graphene (TBG) has taken the spotlight in the condensed matter community since the discovery of correlated phases at the so-called magic angle. Interestingly, the role of a substrate on the electronic properties of TBG has not been completely elucidated. Up to now, most of the theoretical works carried out in order to understand this effect have been done using continuum models. In…
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Twisted bilayer graphene (TBG) has taken the spotlight in the condensed matter community since the discovery of correlated phases at the so-called magic angle. Interestingly, the role of a substrate on the electronic properties of TBG has not been completely elucidated. Up to now, most of the theoretical works carried out in order to understand this effect have been done using continuum models. In this work, we have gone one step ahead and have studied heterostructures of TBG and hBN using an atomistic tight-binding model together with semi-classical molecular dynamics to take into account relaxation effects. We found that the presence of the hBN substrate has significant effects to the band structure of TBG even in the case where TBG and hBN are not aligned. Specifically, the substrate induces a large mass gap and strong pseudomagnetic fields which break the layer degeneracy. Interestingly, such degeneracy can be recovered with a second hBN layer. Finally, we have also developed a continuum model that describes the tight-binding band structure. Our results show that a real-space tight-binding model in combination with semi-classical molecular dynamics are a powerful tool to study the electronic properties of supermoiré systems and that using this real-space methodology could be key in order to explain certain experimental results in which the effect of the substrate plays an important role.
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Submitted 30 October, 2021;
originally announced November 2021.
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Strain control of the competition between metallic and semiconducting states in single-layers of TaSe$_3$
Authors:
Jose Angel Silva-Guillén,
Enric Canadell
Abstract:
TaSe$_3$ is a metallic layered material whose structure is built from TaSe$_3$ trigonal prismatic chains. In this work we report a first-principles density functional theory study of TaSe$_3$ single-layers and we find that, despite the existence of non negligible Se...Se interlayer interactions, TaSe$_3$ single layers are found to be metallic. However, an interesting competition between metallic a…
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TaSe$_3$ is a metallic layered material whose structure is built from TaSe$_3$ trigonal prismatic chains. In this work we report a first-principles density functional theory study of TaSe$_3$ single-layers and we find that, despite the existence of non negligible Se...Se interlayer interactions, TaSe$_3$ single layers are found to be metallic. However, an interesting competition between metallic and semiconducting states is found under the effect of strain. The single-layers keep the metallic behaviour under biaxial strain although the nature of the hole carriers changes. In contrast, uniaxial strain along the chains direction induces the stabilization of a semiconducting state. Potential electronic instabilities due to Fermi surface nesting are found for single-layers under either biaxial strain or uniaxial strain along the long (inter-chain) axis of the layers. Bilayers and trilayers have also been considered. The structural and electronic features behind these unexpected observations are analyzed.
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Submitted 16 September, 2020;
originally announced September 2020.
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Tuning band gaps in twisted bilayer MoS$_2$
Authors:
Yipei Zhang,
Zhen Zhan,
Francisco Guinea,
Jose Angel Silva-Guillen,
Shengjun Yuan
Abstract:
In the emerging world of twisted bilayer structures, the possible configurations are limitless, which enables for a rich landscape of electronic properties. In this paper, we focus on twisted bilayer transition metal dichalcogenides (TMDCs) and study its properties by means of an accurate tight-binding model. We build structures with different angles and find that the so-called flatbands emerge wh…
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In the emerging world of twisted bilayer structures, the possible configurations are limitless, which enables for a rich landscape of electronic properties. In this paper, we focus on twisted bilayer transition metal dichalcogenides (TMDCs) and study its properties by means of an accurate tight-binding model. We build structures with different angles and find that the so-called flatbands emerge when the twist angle is sufficiently small (around 7.3$^{\circ}$). Interestingly, the band gap can be tuned up to a 2.2\% (51 meV) when the twist angle in the relaxed sample varies from 21.8$^{\circ}$ to 0.8$^{\circ}$. Furthermore, when looking at local density of states we find that the band gap varies locally along the moirè pattern due to the change in the coupling between layers at different sites. Finally, we also find that the system can suffer a transition from a semiconductor to a metal when a sufficiently strong electric field is applied. Our study can serve as a guide for the practical engineering of the TMDCs based optoelectronic devices.
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Submitted 26 August, 2020; v1 submitted 28 May, 2020;
originally announced May 2020.
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Multi-ultraflatbands tunability and effect of spin-orbit coupling in twisted bilayer transition metal dichalcogenides
Authors:
Zhen Zhan,
Yipei Zhang,
Pengfei Lv,
Hongxia Zhong,
Guodong Yu,
Francisco Guinea,
Jose Angel Silva-Guillen,
Shengjun Yuan
Abstract:
Ultraflatbands that have been theoretically and experimentally detected in a bunch of van der Waals stacked materials showing some peculiar properties, for instance, highly localized electronic states and enhanced electron-electron interactions. In this Letter, using an accurate tight-binding model, we study the formation and evolution of ultraflatbands in transition metal dichalcogenides (TMDCs)…
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Ultraflatbands that have been theoretically and experimentally detected in a bunch of van der Waals stacked materials showing some peculiar properties, for instance, highly localized electronic states and enhanced electron-electron interactions. In this Letter, using an accurate tight-binding model, we study the formation and evolution of ultraflatbands in transition metal dichalcogenides (TMDCs) under low rotation angles. We find that, unlike in twisted bilayer graphene, ultraflatbands exist in TMDCs for almost any small twist angles and their wave function becomes more localized when the rotation angle decreases. Lattice relaxation, pressure and local deformation can tune the width of the flatbands, as well as their localization. Furthermore, we investigate the effect of spin-orbit coupling on the flatbands and discover spin/orbital/valley locking at the minimum of the conduction band at the K point of the Brillouin zone. The ultraflatbands found in TMDCs with a range of rotation angle below $7^\circ$, may provide an ideal platform to study strongly correlated states.
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Submitted 10 September, 2020; v1 submitted 28 May, 2020;
originally announced May 2020.
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Electron heating and mechanical properties of graphene
Authors:
Jose Angel Silva-Guillén,
Francisco Guinea
Abstract:
The heating of electrons in graphene by laser irradiation, and its effects on the lattice structure, are studied. Values for the temperature of the electron system in realistic situations are obtained. For sufficiently high electron temperatures, the occupancy of the states in the $σ$ band of graphene is modified. The strength of the carbon-carbon bonds changes, leading to the emergence of strains…
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The heating of electrons in graphene by laser irradiation, and its effects on the lattice structure, are studied. Values for the temperature of the electron system in realistic situations are obtained. For sufficiently high electron temperatures, the occupancy of the states in the $σ$ band of graphene is modified. The strength of the carbon-carbon bonds changes, leading to the emergence of strains, and to buckling in suspended samples. While most applications of `strain engineering' in two dimensional materials focus on the effects of strains on electronic properties, the effect studied here leads to alterations of the structure induced by light. This novel optomechanical coupling can induce deflections in the order of $\sim 50$ nm in micron size samples.
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Submitted 30 May, 2019;
originally announced May 2019.
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Large-area, periodic, and tunable intrinsic pseudo-magnetic fields in low-angle twisted bilayer graphene
Authors:
Haohao Shi,
Zhen Zhan,
Zhikai Qi,
Kaixiang Huang,
Edo van Veen,
Jose Angel Silva-Guillén,
Runxiao Zhang,
Pengju Li,
Kun Xie,
Hengxing Ji,
Mikhail I. Katsnelson,
Shengjun Yuan,
Shengyong Qin,
Zhenyu Zhang
Abstract:
A properly strained graphene monolayer or bilayer is expected to harbour periodic pseudo-magnetic fields with high symmetry, yet to date, a convincing demonstration of such pseudo-magnetic fields has been lacking, especially for bilayer graphene. Here, we report the first definitive experimental proof for the existence of large-area, periodic pseudo-magnetic fields, as manifested by vortex lattice…
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A properly strained graphene monolayer or bilayer is expected to harbour periodic pseudo-magnetic fields with high symmetry, yet to date, a convincing demonstration of such pseudo-magnetic fields has been lacking, especially for bilayer graphene. Here, we report the first definitive experimental proof for the existence of large-area, periodic pseudo-magnetic fields, as manifested by vortex lattices in commensurability with the moiré patterns of low-angle twisted bilayer graphene. The pseudo-magnetic fields are strong enough to confine the massive Dirac electrons into circularly localized pseudo-Landau levels, as observed by scanning tunneling microscopy/spectroscopy, and also corroborated by tight-binding calculations. We further demonstrate that the geometry, amplitude, and periodicity of the pseudo-magnetic field can be fine-tuned by both the rotation angle and heterostrain applied to the system. Collectively, the present study substantially enriches twisted bilayer graphene as a powerful enabling platform for exploration of new and exotic physical phenomena, including quantum valley Hall effects and quantum anomalous Hall effects.
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Submitted 9 October, 2019; v1 submitted 11 May, 2019;
originally announced May 2019.
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Anisotropic features in the electronic structure of the two-dimensional transition metal trichalcogenide TiS$_3$: electron do** and plasmons
Authors:
J. A. Silva-Guillén,
E. Canadell,
P. Ordejón,
F. Guinea,
R. Roldán
Abstract:
Analysis of the band structure of TiS$_3$ single-layers suggests the possibility of changing their physical behaviour by injecting electron carriers. The anisotropy of the valence and conduction bands is explained in terms of their complex orbital composition. The nature of the Fermi surface and Lindhard response function for different do** concentrations is studied by means of first-principles…
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Analysis of the band structure of TiS$_3$ single-layers suggests the possibility of changing their physical behaviour by injecting electron carriers. The anisotropy of the valence and conduction bands is explained in terms of their complex orbital composition. The nature of the Fermi surface and Lindhard response function for different do** concentrations is studied by means of first-principles DFT calculations. It is suggested that for electron do** levels $x$ (number of electrons per unit cell) $\sim$ 0.18-0.30$e^-$ the system could exhibit incommensurate charge or spin modulations which, however, would keep the metallic state whereas systems doped with smaller $x$ would be 2D metals without any electronic instability. The effect of spin-orbit coupling in the band dispersion is analysed. The DFT effective masses are used to study the plasmon spectrum from an effective low energy model. We find that this material supports highly anisotropic plasmons, with opposite anisotropy for the electron and hole bands.
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Submitted 19 April, 2017;
originally announced April 2017.
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Theory of 2D crystals: graphene and beyond
Authors:
Rafael Roldán,
Luca Chirolli,
Elsa Prada,
Jose Angel Silva-Guillén,
Pablo San-Jose,
Francisco Guinea
Abstract:
This tutorial review presents an overview of the basic theoretical aspects of two-dimensional (2D) crystals. We revise essential aspects of graphene and the new families of semiconducting 2D materials, like transition metal dichalcogenides or black phosphorus. Minimal theoretical models for various materials are presented. Some of the exciting new possibilities offered by 2D crystals are discussed…
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This tutorial review presents an overview of the basic theoretical aspects of two-dimensional (2D) crystals. We revise essential aspects of graphene and the new families of semiconducting 2D materials, like transition metal dichalcogenides or black phosphorus. Minimal theoretical models for various materials are presented. Some of the exciting new possibilities offered by 2D crystals are discussed, such as manipulation and control of quantum degrees of freedom (spin and pseudospin), confinement of excitons, control of the electronic and optical properties with strain engineering, or unconventional superconducting phases.
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Submitted 2 August, 2017; v1 submitted 21 March, 2017;
originally announced March 2017.
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Electronic Band Structure of Transition Metal Dichalcogenides from Ab Initio and Slater-Koster Tight-Binding Model
Authors:
J. A. Silva-Guillén,
P. San-Jose,
R. Roldán
Abstract:
Semiconducting transition metal dichalcogenides present a complex electronic band structure with a rich orbital contribution to their valence and conduction bands. The possibility to consider the electronic states from a tight-binding model is highly useful for the calculation of many physical properties, for which first principle calculations are more demanding in computational terms when having…
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Semiconducting transition metal dichalcogenides present a complex electronic band structure with a rich orbital contribution to their valence and conduction bands. The possibility to consider the electronic states from a tight-binding model is highly useful for the calculation of many physical properties, for which first principle calculations are more demanding in computational terms when having a large number of atoms. Here, we present a set of Slater-Koster parameters for a tight-binding model that accurately reproduce the structure and the orbital character of the valence and conduction bands of single layer MX$_2$, where M = Mo,Wand X = S, Se. The fit of the analytical tight-binding Hamiltonian is done based on band structure from ab initio calculations. The model is used to calculate the optical conductivity of the different compounds from the Kubo formula.
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Submitted 14 November, 2016;
originally announced November 2016.
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Enhanced superconductivity in atomically thin TaS2
Authors:
Efrén Navarro-Moratalla,
Joshua O. Island,
Samuel Mañas-Valero,
Elena Pinilla-Cienfuegos,
Andres Castellanos-Gomez,
Jorge Quereda,
Gabino Rubio-Bollinger,
Luca Chirolli,
Jose Angel Silva-Guillén,
Nicolás Agraït,
Gary A. Steele,
Francisco Guinea,
Herre S. J. van der Zant,
Eugenio Coronado
Abstract:
The ability to exfoliate layered materials down to the single layer limit has opened the opportunity to understand how a gradual reduction in dimensionality affects the properties of bulk materials. Here we use this top-down approach to address the problem of superconductivity in the two-dimensional limit. The transport properties of electronic devices based on 2H tantalum disulfide flakes of diff…
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The ability to exfoliate layered materials down to the single layer limit has opened the opportunity to understand how a gradual reduction in dimensionality affects the properties of bulk materials. Here we use this top-down approach to address the problem of superconductivity in the two-dimensional limit. The transport properties of electronic devices based on 2H tantalum disulfide flakes of different thicknesses are presented. We observe that superconductivity persists down to the thinnest layer investigated (3.5 nm), and interestingly, we find a pronounced enhancement in the critical temperature from 0.5 K to 2.2 K as the layers are thinned down. In addition, we propose a tight-binding model, which allows us to attribute this phenomenon to an enhancement of the effective electron-phonon coupling constant. This work provides evidence that reducing dimensionality can strengthen superconductivity as opposed to the weakening effect that has been reported in other 2D materials so far.
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Submitted 20 April, 2016; v1 submitted 19 April, 2016;
originally announced April 2016.
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Electronic structure of $2H$-NbSe$_2$ single-layers in the CDW state
Authors:
J. A. Silva-Guillén,
P. Ordejón,
F. Guinea,
E. Canadell
Abstract:
A density functional theory study of NbSe$_2$ single-layers in the normal non-modulated and the $3\times3$ CDW states is reported. We show that, in the single layer, the CDW barely affects the Fermi surface of the system, thus ruling out a nesting mechanism as the driving force for the modulation. The CDW stabilizes levels lying around 1.5 eV below the Fermi level within the Se-based valence band…
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A density functional theory study of NbSe$_2$ single-layers in the normal non-modulated and the $3\times3$ CDW states is reported. We show that, in the single layer, the CDW barely affects the Fermi surface of the system, thus ruling out a nesting mechanism as the driving force for the modulation. The CDW stabilizes levels lying around 1.5 eV below the Fermi level within the Se-based valence band but having a substantial Nb-Nb bonding character. The absence of interlayer interactions leads to the suppression of the pancake-like portion of the bulk Fermi surface in the single-layer. We perform scanning tunneling microscopy simulations and find that the images noticeably change with the sign and magnitude of the voltage bias. The atomic corrugation of the Se sublayer induced by the modulation plays a primary role in leading to these images, but the electronic reorganization also has an important contribution. The analysis of the variation of these images with the bias voltage does not support a Fermi surface nesting mechanism for the CDW. It is also shown that underlying graphene layers (present in some of the recent experimental work) do not modify the conduction band, but do affect the shape of the valence band of NbSe$_2$ single-layers. The relevance of these results in understanding recent physical measurements for NbSe$_2$ single-layers is discussed.
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Submitted 30 March, 2016;
originally announced March 2016.
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Electronic properties of single-layer and multilayer transition metal dichalcogenides $MX_2$ ($M=$ Mo, W and $X=$ S, Se)
Authors:
R. Roldán,
J. A. Silva-Guillén,
M. P. López-Sancho,
F. Guinea,
E. Cappelluti,
P. Ordejón
Abstract:
Single- and few-layer transition metal dichalcogenides have recently emerged as a new family of layered crystals with great interest, not only from the fundamental point of view, but also because of their potential application in ultrathin devices. Here we review the electronic properties of semiconducting $MX_2$, where $M=$Mo or W and $X=$ S or Se. Based on of density functional theory calculatio…
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Single- and few-layer transition metal dichalcogenides have recently emerged as a new family of layered crystals with great interest, not only from the fundamental point of view, but also because of their potential application in ultrathin devices. Here we review the electronic properties of semiconducting $MX_2$, where $M=$Mo or W and $X=$ S or Se. Based on of density functional theory calculations, which include the effect of spin-orbit interaction, we discuss the band structure of single-layer, bilayer and bulk compounds. The band structure of these compounds is highly sensitive to elastic deformations, and we review how strain engineering can be used to manipulate and tune the electronic and optical properties of those materials. We further discuss the effect of disorder and imperfections in the lattice structure and their effect on the optical and transport properties of $MX_2$. The superconducting transition in these compounds, which has been observed experimentally, is analyzed, as well as the different mechanisms proposed so far to explain the pairing. Finally, we include a discussion on the excitonic effects which are present in these systems.
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Submitted 8 October, 2014;
originally announced October 2014.
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Momentum dependence of spin-orbit interaction effects in single-layer and multi-layer transition metal dichalcogenides
Authors:
R. Roldán,
M. P. López-Sancho,
E. Cappelluti,
J. A. Silva-Guillén,
P. Ordejón,
F. Guinea
Abstract:
One of the main characteristics of the new family of two-dimensional crystals of semiconducting transition metal dichalcogenides (TMD) is the strong spin-orbit interaction, which makes them very promising for future applications in spintronics and valleytronics devices. Here we present a detailed study of the effect of spin-orbit coupling (SOC) on the band structure of single-layer and bulk TMDs,…
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One of the main characteristics of the new family of two-dimensional crystals of semiconducting transition metal dichalcogenides (TMD) is the strong spin-orbit interaction, which makes them very promising for future applications in spintronics and valleytronics devices. Here we present a detailed study of the effect of spin-orbit coupling (SOC) on the band structure of single-layer and bulk TMDs, including explicitly the role of the chalcogen orbitals and their hybridization with the transition metal atoms. To this aim, we combine density functional theory (DFT) calculations with a Slater-Koster tight-binding model. Whereas most of the previous tight-binding models have been restricted to the K and K' points of the Brillouin zone (BZ), here we consider the effect of SOC in the whole BZ, and the results are compared to the band structure obtained by DFT methods. The tight-binding model is used to analyze the effect of SOC in the band structure, considering separately the contributions from the transition metal and the chalcogen atoms. Finally, we present a scenario where, in the case of strong SOC, the spin/orbital/valley entanglement at the minimum of the conduction band at Q can be probed and be of experimental interest in the most common cases of electron-do** reported for this family of compounds.
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Submitted 17 November, 2014; v1 submitted 20 January, 2014;
originally announced January 2014.
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Tight-binding model and direct-gap/indirect-gap transition in single-layer and multi-layer MoS$_2$
Authors:
E. Cappelluti,
R. Roldán,
J. A. Silva-Guillén,
P. Ordejón,
F. Guinea
Abstract:
In this paper we present a paradigmatic tight-binding model for single-layer as well as for multi-layered semiconducting MoS$_2$ and similar transition metal dichalcogenides. We show that the electronic properties of multilayer systems can be reproduced in terms of a tight-binding modelling of the single-layer hop** terms by simply adding the proper interlayer hop**s ruled by the chalcogenide…
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In this paper we present a paradigmatic tight-binding model for single-layer as well as for multi-layered semiconducting MoS$_2$ and similar transition metal dichalcogenides. We show that the electronic properties of multilayer systems can be reproduced in terms of a tight-binding modelling of the single-layer hop** terms by simply adding the proper interlayer hop**s ruled by the chalcogenide atoms. We show that such tight-binding model permits to understand and control in a natural way the transition between a direct-gap band structure, in single-layer systems, to an indirect gap in multilayer compounds in terms of a momentum/orbital selective interlayer splitting of the relevant valence and conduction bands. The model represents also a suitable playground to investigate in an analytical way strain and finite-size effects.
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Submitted 17 April, 2013;
originally announced April 2013.
