Showing 1–11 of 11 results for author: Sigg, H

Investigation of Lasing in Highly Strained Germanium at the Crossover to Direct Band Gap

Authors: Francesco Armand Pilon, Yann-Michel Niquet, Jeremie Chretien, Nicolas Pauc, Vincent Reboud, Vincent Calvo, Julie Widiez, Jean Michel Hartmann, Alexei Chelnokov, Jerome Faist, Hans Sigg

Abstract: Efficient and cost-effective Si-compatible lasers are a long standing wish of the optoelectronic industry. In principle, there are two options. For many applications, lasers based on III-V compounds provide compelling solutions, even if the integration is complex and therefore costly. However, where low costs and also high integration density are crucial, group-IV-based lasers - made of Ge and GeS… ▽ More Efficient and cost-effective Si-compatible lasers are a long standing wish of the optoelectronic industry. In principle, there are two options. For many applications, lasers based on III-V compounds provide compelling solutions, even if the integration is complex and therefore costly. However, where low costs and also high integration density are crucial, group-IV-based lasers - made of Ge and GeSn, for example - could be an alternative, provided their performance can be improved. Such progresses will come with better materials but also with the development of a profounder understanding of their optical properties. In this work, we demonstrate, using Ge microbridges with strain up to 6.6%, a powerful method for determining the population inversion gain and the material and optical losses of group IV lasers. This is made by deriving the values for the injection carrier densities and the cavity losses from the measurement of the change of the refractive index and the mode linewidth, respectively. We observe a laser threshold consistent with optical gain and material loss values obtained from a tight binding calculation. Lasing in Ge - at steady-state - is found to be limited to low temperatures in a narrow regime of tensile strain at the crossover to the direct band gap bandstructure. We explain this observation by parasitic intervalence band absorption that increases rapidly with higher injection densities and temperature. N-do** seems to reduce the material loss at low excitation but does not extend the lasing regime. We also discuss the impact of the optically inactive carriers in the L-valley on the linewidth of group IV lasers. △ Less

Submitted 17 June, 2022; v1 submitted 27 January, 2022; originally announced January 2022.

Comments: 29 pages, 70 references, 15 figures

Journal ref: Physical Review Research 4, 033050 (2022)

Lasing in Group-IV materials

Authors: V. Reboud, D. Buca, H. Sigg, J. M. Hartmann, Z. Ikonic, N. Pauc, V. Calvo, P. Rodriguez, A. Chelnokov

Abstract: Silicon photonics in the near-Infra-Red, up to 1.6 um, is already one of key technologies in optical data communications, particularly short-range. It is also being prospected for applications in quantum computing, artificial intelligence, optical signal processing, where complex photonic integration is to be combined with large-volume fabrication. However, silicon photonics does not yet cover a l… ▽ More Silicon photonics in the near-Infra-Red, up to 1.6 um, is already one of key technologies in optical data communications, particularly short-range. It is also being prospected for applications in quantum computing, artificial intelligence, optical signal processing, where complex photonic integration is to be combined with large-volume fabrication. However, silicon photonics does not yet cover a large portion of applications in the mid-IR. In the 2 to 5 um wavelength range, environmental sensing, life sensing, and security all rely on optical signatures of molecular vibrations to identify complex individual chemical species. The markets for such analysis are huge and constantly growing, with a push for sensitivity, specificity, compactness, low-power operation and low cost. An all-group-IV, CMOS-compatible mid-IR integrated photonic platform would be a key enabler in this wavelength range. As for other wavelengths, such a platform should be complete with low-loss guided interconnects, detectors, modulators, eventually, and most importantly efficient and integrated light sources. This chapter reviews recent developments in the fields of mid-IR silicon-compatible optically and electrically pumped lasers, light emitting diodes and photodetectors based on Ge, GeSn and SiGeSn alloys. It contains insights into the fundamentals of these developments, including band structure modelling, material growth and processing techniques. △ Less

Submitted 18 December, 2020; originally announced December 2020.

Comments: Silicon Photonics IV: Innovative Frontiers, edited by David J. Lockwood and Lorenzo Pavesi, Springer series Topics in Applied Physics (2021)

Precise determination of low energy electronuclear Hamiltonian for LiY$_{1-x}$Ho$_{x}$F$_{4}$

Authors: A. Beckert, R. I. Hermans, M. Grimm, J. R. Freeman, E. H. Linfield, A. G. Davies, M. Müller, H. Sigg, S. Gerber, G. Matmon, G. Aeppli

Abstract: We use complementary optical spectroscopy methods to directly measure the lowest crystal-field energies of the rare-earth quantum magnet LiY$_{1-x}$Ho$_{x}$F$_{4}$, including their hyperfine splittings, with more than 10 times higher resolution than previous work. We are able to observe energy level splittings due to the $^6\mathrm{Li}$ and $^7\mathrm{Li}$ isotopes, as well as non-equidistantly sp… ▽ More We use complementary optical spectroscopy methods to directly measure the lowest crystal-field energies of the rare-earth quantum magnet LiY$_{1-x}$Ho$_{x}$F$_{4}$, including their hyperfine splittings, with more than 10 times higher resolution than previous work. We are able to observe energy level splittings due to the $^6\mathrm{Li}$ and $^7\mathrm{Li}$ isotopes, as well as non-equidistantly spaced hyperfine transitions originating from dipolar and quadrupolar hyperfine interactions. We provide refined crystal field parameters and extract the dipolar and quadrupolar hyperfine constants ${A_J=0.02703\pm0.00003}$ $\textrm{cm}^{-1}$ and ${B= 0.04 \pm0.01}$ $\textrm{cm}^{-1}$, respectively. Thereupon we determine all crystal-field energy levels and magnetic moments of the $^5I_8$ ground state manifold, including the (non-linear) hyperfine corrections. The latter match the measurement-based estimates. The scale of the non-linear hyperfine corrections sets an upper bound for the inhomogeneous line widths that would still allow for unique addressing of a selected hyperfine transition. e.g. for quantum information applications. Additionally, we establish the far-infrared, low-temperature refractive index of LiY$_{1-x}$Ho$_{x}$F$_{4}$. △ Less

Submitted 16 December, 2020; originally announced December 2020.

Comments: 9 pages, 6 Figures, 3 Tables

Taking advantage of multiplet structure for lineshape analysis in Fourier space

Authors: Adrian Beckert, Hans Sigg, Gabriel Aeppli

Abstract: Lineshape analysis is a recurrent and often computationally intensive task in optics, even more so for multiple peaks in the presence of noise. We demonstrate an algorithm which takes advantage of peak multiplicity (N) to retrieve line shape information. The method is exemplified via analysis of Lorentzian and Gaussian contributions to individual lineshapes for a practical spectroscopic measuremen… ▽ More Lineshape analysis is a recurrent and often computationally intensive task in optics, even more so for multiple peaks in the presence of noise. We demonstrate an algorithm which takes advantage of peak multiplicity (N) to retrieve line shape information. The method is exemplified via analysis of Lorentzian and Gaussian contributions to individual lineshapes for a practical spectroscopic measurement and benefits from a linear increase in sensitivity with the number N. The robustness of the method and its benefits in terms of noise reduction and order of magnitude improvement in run-time performance are discussed. △ Less

Submitted 11 May, 2020; originally announced May 2020.

Comments: 12 pages, 6 figures

Optically pumped GeSn micro-disks with 16 % Sn lasing at 3.1 um up to 180K

Authors: V. Reboud, A. Gassenq, N. Pauc, J. Aubin, L. Milord, Q. M. Thai, M. Bertrand, K. Guilloy, D. Rouchon, J. Rothman, T. Zabel, F. Armand Pilon, H. Sigg, A. Chelnokov, J. M. Hartmann, V. Calvo

Abstract: Recent demonstrations of optically pumped lasers based on GeSn alloys put forward the prospect of efficient laser sources monolithically integrated on a Si photonic platform. For instance, GeSn layers with 12.5% of Sn were reported to lase at 2.5 um wavelength up to 130 K. In this work, we report a longer emitted wavelength and a significant improvement in lasing temperature. The improvements resu… ▽ More Recent demonstrations of optically pumped lasers based on GeSn alloys put forward the prospect of efficient laser sources monolithically integrated on a Si photonic platform. For instance, GeSn layers with 12.5% of Sn were reported to lase at 2.5 um wavelength up to 130 K. In this work, we report a longer emitted wavelength and a significant improvement in lasing temperature. The improvements resulted from the use of higher Sn content GeSn layers of optimized crystalline quality, grown on graded Sn content buffers using Reduced Pressure CVD. The fabricated GeSn micro-disks with 13% and 16% of Sn showed lasing operation at 2.6 um and 3.1 um wavelengths, respectively. For the longest wavelength (i.e 3.1 um), lasing was demonstrated up to 180 K, with a threshold of 377 kW/cm2 at 25 K. △ Less

Submitted 21 April, 2017; originally announced April 2017.

Comments: 15 pages with supplementary information. 6 figures and 2 tables in total

Germanium under high tensile stress: nonlinear dependence of direct band gap vs. strain

Authors: K. Guilloy, N. Pauc, A. Gassenq, Y. M. Niquet, J. M. Escalante, I. Duchemin, S. Tardif, G. Osvaldo Dias, D. Rouchon, J. Widiez, J. M. Hartmann, R. Geiger, T. Zabel, H. Sigg, J. Faist, A. Chelnokov, V. Reboud, V. Calvo

Abstract: Germanium is a strong candidate as a laser source for silicon photonics. It is widely accepted that the band structure of germanium can be altered by tensile strain so as to reduce the energy difference between its direct and indirect band gaps. However, the conventional deformation potential model most widely adopted to describe this transformation happens to have been investigated only up to 1 %… ▽ More Germanium is a strong candidate as a laser source for silicon photonics. It is widely accepted that the band structure of germanium can be altered by tensile strain so as to reduce the energy difference between its direct and indirect band gaps. However, the conventional deformation potential model most widely adopted to describe this transformation happens to have been investigated only up to 1 % uniaxially loaded strains. In this work, we use a micro-bridge geometry to uniaxially stress germanium along [100] up to $\varepsilon_{100}$=3.3 % longitudinal strain and then perform electro-absorption spectroscopy. We accurately measure the energy gap between the conduction band at the $Γ$ point and the light- and heavy-hole valence bands. While the experimental results agree with the conventional linear deformation potential theory up to 2 % strain, a significantly nonlinear behavior is observed at higher strains. We measure the deformation potential of germanium to be a = -9.1 $\pm$ 0.3 eV and b = -2.32 $\pm$ 0.06 eV and introduce a second order deformation potential. The experimental results are found to be well described by tight-binding simulations. These new high strain coefficients will be suitable for the design of future CMOS-compatible lasers and opto-electronic devices based on highly strained germanium. △ Less

Submitted 24 June, 2016; v1 submitted 6 June, 2016; originally announced June 2016.

Accurate strain measurements in highly strained Ge microbridges

Authors: A. Gassenq, S. Tardif, K. Guilloy, G. Osvaldo Dias, N. Pauc, I. Duchemin, D. Rouchon, J-M. Hartmann, J. Widiez, J. Escalante, Y-M. Niquet, R. Geiger, T. Zabel, H. Sigg, J. Faist, A. Chelnokov, F. Rieutord, V. Reboud, V. Calvo

Abstract: Ge under high strain is predicted to become a direct bandgap semiconductor. Very large deformations can be introduced using microbridge devices. However, at the microscale, strain values are commonly deduced from Raman spectroscopy using empirical linear models only established up to 1.2% for uniaxial stress. In this work, we calibrate the Raman-strain relation at higher strain using synchrotron b… ▽ More Ge under high strain is predicted to become a direct bandgap semiconductor. Very large deformations can be introduced using microbridge devices. However, at the microscale, strain values are commonly deduced from Raman spectroscopy using empirical linear models only established up to 1.2% for uniaxial stress. In this work, we calibrate the Raman-strain relation at higher strain using synchrotron based microdiffraction. The Ge microbridges show unprecedented high tensile strain up to 4.9 % corresponding to an unexpected 9.9 cm-1 Raman shift. We demonstrate experimentally and theoretically that the Raman strain relation is not linear and we provide a more accurate expression. △ Less

Submitted 15 April, 2016; originally announced April 2016.

Comments: 10 pages, 4 figures

Journal ref: Appl. Phys. Lett. 108, 241902 (2016)

Lattice strain and tilt map** in stressed Ge microstructures using X-ray Laue micro-diffraction and rainbow-filtering

Authors: Samuel Tardif, Alban Gassenq, Kevin Guilloy, Nicolas Pauc, Guilherme Osvaldo Dias, Jean-Michel Hartmann, Julie Widiez, Thomas Zabel, Esteban Marin, Hans Sigg, Jérôme Faist, Alexei Chelnokov, Vincent Reboud, Vincent Calvo, Jean-Sébastien Micha, Odile Robach, François Rieutord

Abstract: Micro-Laue diffraction and simultaneous rainbow-filtered micro-diffraction were used to measure accurately the full strain tensor and the lattice orientation distribution at the sub-micron scale in highly strained, suspended Ge micro-devices. A numerical approach to obtain the full strain tensor from the deviatoric strain measurement alone is also demonstrated and used for faster full strain mappi… ▽ More Micro-Laue diffraction and simultaneous rainbow-filtered micro-diffraction were used to measure accurately the full strain tensor and the lattice orientation distribution at the sub-micron scale in highly strained, suspended Ge micro-devices. A numerical approach to obtain the full strain tensor from the deviatoric strain measurement alone is also demonstrated and used for faster full strain map**. We performed the measurements in a series of micro-devices under either uniaxial or biaxial stress and found an excellent agreement with numerical simulations. This shows the superior potential of Laue micro-diffraction for the investigation of highly strained micro-devices. △ Less

Submitted 24 June, 2016; v1 submitted 21 March, 2016; originally announced March 2016.

Comments: 28 pages, 10 figures

Uniaxially stressed germanium with fundamental direct band gap

Authors: R. Geiger, T. Zabel, E. Marin, A. Gassenq, J. -M. Hartmann, J. Widiez, J. Escalante, K. Guilloy, N. Pauc, D. Rouchon, G. Osvaldo Diaz, S. Tardif, F. Rieutord, I. Duchemin, Y. -M. Niquet, V. Reboud, V. Calvo, A. Chelnokov, J. Faist, H. Sigg

Abstract: We demonstrate the crossover from indirect- to direct band gap in tensile-strained germanium by temperature-dependent photoluminescence. The samples are strained microbridges that enhance a biaxial strain of 0.16% up to 3.6% uniaxial tensile strain. Cooling the bridges to 20 K increases the uniaxial strain up to a maximum of 5.4%. Temperature-dependent photoluminescence reveals the crossover to a… ▽ More We demonstrate the crossover from indirect- to direct band gap in tensile-strained germanium by temperature-dependent photoluminescence. The samples are strained microbridges that enhance a biaxial strain of 0.16% up to 3.6% uniaxial tensile strain. Cooling the bridges to 20 K increases the uniaxial strain up to a maximum of 5.4%. Temperature-dependent photoluminescence reveals the crossover to a fundamental direct band gap to occur between 4.0% and 4.5%. Our data are in good agreement with new theoretical computations that predict a strong bowing of the band parameters with strain. △ Less

Submitted 10 December, 2015; originally announced March 2016.

Comments: 9 pages, 8 figures

Skirting Terahertz Waves in a Photo-excited Nanoslit Structure

Authors: Mostafa Shalaby, Justyna Fabiańska, Marco Peccianti, Yavuz Ozturk, Francois Vidal, Hans Sigg, Roberto Morandotti, Thomas Feurer

Abstract: Terahertz fields can be dramatically enhanced as they propagate through nanometer-sized slits. The enhancement is mediated by significant accumulation of the induced surface charges on the surrounding metal. This enhancement is shown here to be dynamically modulated and the nanoslits are gradually shunted using a copropagating optical beam. The terahertz fields are found to skirt the nanoscale pho… ▽ More Terahertz fields can be dramatically enhanced as they propagate through nanometer-sized slits. The enhancement is mediated by significant accumulation of the induced surface charges on the surrounding metal. This enhancement is shown here to be dynamically modulated and the nanoslits are gradually shunted using a copropagating optical beam. The terahertz fields are found to skirt the nanoscale photo-excited region underneath the slits, scattering to the far field and rigorously map** the near field. △ Less

Submitted 1 April, 2014; originally announced April 2014.

Intra-valence-band mixing in strain-compensated SiGe quantum wells

Authors: S. Tsu**o, A. Borak, C. Falub, T. Fromherz, L. Diehl, H. Sigg, D. Gruetzmacher

Abstract: We explore the midinfrared absorption of strain-compensated p-Si0.2Ge0.8/Si quantum wells for various well thicknesses and temperatures. Owing to the large band offset due to the large bi-axial strain contrast between the wells and barriers, the intersubband transitions energies from the ground state to the excited heavy hole (hh), light hole (lh) and split-off hole (so) states are resolved to ~… ▽ More We explore the midinfrared absorption of strain-compensated p-Si0.2Ge0.8/Si quantum wells for various well thicknesses and temperatures. Owing to the large band offset due to the large bi-axial strain contrast between the wells and barriers, the intersubband transitions energies from the ground state to the excited heavy hole (hh), light hole (lh) and split-off hole (so) states are resolved to ~0.5 eV. When hh2 is within ~30 meV of lh1 or so1 a partial transfer of the hh1-hh2 oscillator strength to the hh1-lh1 or hh1-so1 transitions is observed, which is otherwise forbidden for light polarized perpendicular to the plane of the wells. This is a clear sign of mixing between the hh and lh or so-states. A large temperature induced broadening of hh2 peak is observed for narrow wells indicating a non-parabolic dispersion of the hh2 states due to the mixing with the lh/so continuum. We found that the 6-band k.p theory gives a quantitative account of the observations. A possible role of many-body effects in the temperatureinduced negative peak shift is discussed. △ Less

Submitted 13 May, 2005; originally announced May 2005.

Comments: 16 pages, 3 figures