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Scalable single-microring hybrid III-V/Si lasers for emerging narrow-linewidth applications
Authors:
Jiawei Wang,
Xiang Li,
Xin Guo,
Ter-Hoe Loh,
Luigi Ranno,
Chongyang Liu,
Rusli,
Hong Wang,
Jia Xu Brian Sia
Abstract:
Silicon photonics, compatible with large-scale silicon manufacturing, is a disruptive photonic platform that has indicated significant implications in industry and research areas (e.g., quantum, neuromorphic computing, LiDAR). Cutting-edge applications such as high-capacity coherent optical communication and heterodyne LiDAR have escalated the demand for integrated narrow-linewidth laser sources.…
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Silicon photonics, compatible with large-scale silicon manufacturing, is a disruptive photonic platform that has indicated significant implications in industry and research areas (e.g., quantum, neuromorphic computing, LiDAR). Cutting-edge applications such as high-capacity coherent optical communication and heterodyne LiDAR have escalated the demand for integrated narrow-linewidth laser sources. To that effect, this work seeks to address this requirement through the development of a high-performance hybrid III-V/silicon laser. The developed integrated laser, utilizes a single microring resonator (MRR), demonstrating single-mode operation with a side mode suppression ratio (SMSR) exceeding 40 dB, with laser output power as high as 16.4 mW. Moving away from current hybrid/heterogeneous laser architectures that necessitate multiple complex control, the developed laser architecture requires only two control parameters. Importantly, this serves to streamline industrial adoption by reducing the complexity involved in characterizing these lasers, at-scale. Through the succinct structure and control framework, a narrow laser linewidth of 2.79 kHz and low relative intensity noise (RIN) of -135 dB/Hz are achieved. Furthermore, optical data transmission at 12.5 Gb/s is demonstrated where a signal-to-noise ratio (SNR) of 10 dB is measured.
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Submitted 14 May, 2024;
originally announced May 2024.
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Highly-efficient fiber to Si-waveguide free-form coupler for foundry-scale silicon photonics
Authors:
Luigi Ranno,
Jia Xu Brian Sia,
Cosmin Popescu,
Drew Weninger,
Samuel Serna,
Shaoliang Yu,
Lionel C. Kimerling,
Anuradha Agarwal,
Tian Gu,
Juejun Hu
Abstract:
As silicon photonics transitions from research to commercial deployment, packaging solutions that efficiently couple light into highly-compact and functional sub-micron silicon waveguides are imperative but remain challenging. The 220 nm silicon-on-insulator (SOI) platform, poised to enable large-scale integration, is the most widely adopted by foundries, resulting in established fabrication proce…
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As silicon photonics transitions from research to commercial deployment, packaging solutions that efficiently couple light into highly-compact and functional sub-micron silicon waveguides are imperative but remain challenging. The 220 nm silicon-on-insulator (SOI) platform, poised to enable large-scale integration, is the most widely adopted by foundries, resulting in established fabrication processes and extensive photonic component libraries. The development of a highly-efficient, scalable and broadband coupling scheme for this platform is therefore of paramount importance. Leveraging two-photon polymerization (TPP) and a deterministic free-form micro-optics design methodology based on the Fermat's principle, this work demonstrates an ultra-efficient and broadband 3-D coupler interface between standard SMF-28 single-mode fibers and silicon waveguides on the 220 nm SOI platform. The coupler achieves a low coupling loss of 0.8 dB for fundamental TE mode, along with 1-dB bandwidth exceeding 180 nm. The broadband operation enables diverse bandwidth-driven applications ranging from communications to spectroscopy. Furthermore, the 3-D free-form coupler also enables large tolerance to fiber misalignments and manufacturing variability, thereby relaxing packaging requirements towards cost reduction capitalizing on standard electronic packaging process flows.
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Submitted 20 December, 2023;
originally announced December 2023.
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Crown ether decorated silicon photonics for safeguarding against lead poisoning
Authors:
Luigi Ranno,
Yong Zen Tan,
Chi Siang Ong,
Xin Guo,
Khong Nee Koo,
Xiang Li,
Wanjun Wang,
Samuel Serna,
Chongyang Liu,
Rusli,
Callum G. Littlejohns,
Graham T. Reed,
Juejun Hu,
Hong Wang,
Jia Xu Brian Sia
Abstract:
Lead (Pb2+) toxification in society is one of the most concerning public health crisis that remains unaddressed. The exposure to Pb2+ poisoning leads to a multitude of enduring health issues, even at the part-per-billion scale (ppb). Yet, public action dwarfs its impact. Pb2+ poisoning is estimated to account for 1 million deaths per year globally, which is in addition to its chronic impact on chi…
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Lead (Pb2+) toxification in society is one of the most concerning public health crisis that remains unaddressed. The exposure to Pb2+ poisoning leads to a multitude of enduring health issues, even at the part-per-billion scale (ppb). Yet, public action dwarfs its impact. Pb2+ poisoning is estimated to account for 1 million deaths per year globally, which is in addition to its chronic impact on children. With their ring-shaped cavities, crown ethers are uniquely capable of selectively binding to specific ions. In this work, for the first time, the synergistic integration of highly-scalable silicon photonics, with crown ether amine conjugation via Fischer esterification in an environmentally-friendly fashion is demonstrated. This realises a photonic platform that enables the in-situ, highly-selective and quantitative detection of various ions. The development dispels the existing notion that Fischer esterification is restricted to organic compounds, laying the ground for subsequent amine conjugation for various crown ethers. In this work, the platform is engineered for Pb2+ detection, demonstrating a large dynamic detection range of 1 - 262000 ppb with high selectivity against a wide range of relevant ions. These results indicate the potential for the pervasive implementation of the technology to safeguard against ubiquitous lead poisoning in our society.
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Submitted 31 October, 2023;
originally announced November 2023.
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High-speed 4 ${\times}$ 4 silicon photonic electro-optic switch, operating at the 2 μm waveband
Authors:
Jiawei Wang,
Jia Xu Brian Sia,
Xiang Li,
Xin Guo,
Wanjun Wang,
Zhongliang Qiao,
Callum G. Littlejohns. Chongyang Liu,
Graham T. Reed,
Rusli,
Hong Wang
Abstract:
The escalating need for expansive data bandwidth, and the resulting capacity constraints of the single mode fiber (SMF) have positioned the 2-$μ$m waveband as a prospective window for emerging applications in optical communication. This has initiated an ecosystem of silicon photonic components in the region driven by CMOS compatibility, low cost, high efficiency and potential for large-scale integ…
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The escalating need for expansive data bandwidth, and the resulting capacity constraints of the single mode fiber (SMF) have positioned the 2-$μ$m waveband as a prospective window for emerging applications in optical communication. This has initiated an ecosystem of silicon photonic components in the region driven by CMOS compatibility, low cost, high efficiency and potential for large-scale integration. In this study, we demonstrate a plasma dispersive, 4 ${\times}$ 4 electro-optic switch operating at the 2-$μ$m waveband with the shortest switching times. The demonstrated switch operates across a 45-nm bandwidth, with 10-90% rise and 90-10% fall time of 1.78 ns and 3.02 ns respectively. In a 4 ${\times}$ 4 implementation, crosstalk below -15 dB and power consumption below 19.15 mW across all 16 ports are indicated. The result brings high-speed optical switching to the portfolio of devices at the promising waveband.
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Submitted 6 July, 2023;
originally announced July 2023.
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Multi-material heterogeneous integration on a 3-D Photonic-CMOS platform
Authors:
Luigi Ranno,
Jia Xu Brian Sia,
Khoi Phuong Dao,
Juejun Hu
Abstract:
Photonics has been one of the primary beneficiaries of advanced silicon manufacturing. By leveraging on mature complementary metal-oxide-semiconductor (CMOS) process nodes, unprecedented device uniformities and scalability have been achieved at low costs. However, some functionalities, such as optical memory, Pockels modulation, and magnetooptical activity, are challenging or impossible to acquire…
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Photonics has been one of the primary beneficiaries of advanced silicon manufacturing. By leveraging on mature complementary metal-oxide-semiconductor (CMOS) process nodes, unprecedented device uniformities and scalability have been achieved at low costs. However, some functionalities, such as optical memory, Pockels modulation, and magnetooptical activity, are challenging or impossible to acquire on group-IV materials alone. Heterogeneous integration promises to expand the range of capabilities within silicon photonics. Existing heterogeneous integration protocols are nonetheless not compatible with active silicon processes offered at most photonic foundries. In this work, we propose a novel heterogeneous integration platform that will enable wafer-scale, multi-material integration with active silicon-based photonics, requiring zero-change to existing foundry process. Furthermore, the platform will also pave the way to a class of high-performance devices. We propose a grating coupler design with peak coupling efficiency reaching 93%, an antenna with peak diffraction efficiency in excess of 97%, and a broadband adiabatic polarization rotator with conversion efficiency exceeding 99%.
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Submitted 13 April, 2023;
originally announced April 2023.
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Linear Optical Modulators for Prospective Communications at the 2 μm Waveband
Authors:
Jia Xu Brian Sia,
Xiang Li,
X. Guo,
Jiawei Wang,
Wanjun Wang,
Zhongliang Qiao,
Callum G. Littlejohns,
Chongyang Liu,
Kian Siong Ang,
Graham T. Reed,
Hong Wang
Abstract:
The 2 μm waveband is an area that could have significant technological consequences, with applications ranging from spectroscopy, LIDAR and free-space communications. The development of the thulium-doped fiber amplifier, hollow-core photonic bandgap fiber and 2 μm GaSb-based diode lasers has highlighted the ability of the waveband in alleviating the fiber capacity crisis in the incumbent communica…
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The 2 μm waveband is an area that could have significant technological consequences, with applications ranging from spectroscopy, LIDAR and free-space communications. The development of the thulium-doped fiber amplifier, hollow-core photonic bandgap fiber and 2 μm GaSb-based diode lasers has highlighted the ability of the waveband in alleviating the fiber capacity crisis in the incumbent communication infrastructure. The above has initiated vibrant development in the silicon photonic-space at 2 μm, where the area is capable of enabling highly-integrated photonic circuits, and potentially at low-cost and high-volumes. However, as of now, modulator linearity at 2 μm has not been addressed. The metric, as characterized by spurious free dynamic range is imperative for numerous applications such as RF photonic links for 5G and digital analog transmission in coherent communications. The development of linear optical modulators will be crucial in bringing these applications to the 2 μm. In view of that, this work is the first to address modulator linearity at the 2 μm, where the ring-assisted Mach-Zehnder modulator is developed, indicating spurious free dynamic range as high as 95 dB.Hz^2/3. It is found that that modulator spurious free dynamic range has a strong dependence on modulator bias voltage where it impacts the linearity of the transfer function in which the input RF signal is applied upon. The demonstrated modulator indicates favorable performance within silicon photonic modulators developed at 2 μm with bandwidth exceeding 17.5 GHz and modulation efficiency ranging from 0.70 to 1.25 V.cm.
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Submitted 8 October, 2022;
originally announced October 2022.
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Ultralow Schottky Barriers in hBN-Encapsulated Monolayer WSe$_2$ Tunnel Field-Effect Transistors
Authors:
Gaurav Pande,
Jyun-Yan Siao,
Wei-Liang Chen,
Chien-Ju Lee,
Raman Sankar,
Yu-Ming Chang,
Chii-Dong Chen,
Wen-Hao Chang,
Fang-Cheng Chou,
Minn-Tsong Lin
Abstract:
To explore the potential of field-effect transistors (FETs) based on monolayers of the two-dimensional semiconducting channel(SC) for spintronics, the two most important issues are to ensure the formation of variable low resistive tunnel ferromagnetic contacts(FC), and to preserve intrinsic properties of the SC during fabrication. Large Schottky barriers lead to the formation of high resistive con…
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To explore the potential of field-effect transistors (FETs) based on monolayers of the two-dimensional semiconducting channel(SC) for spintronics, the two most important issues are to ensure the formation of variable low resistive tunnel ferromagnetic contacts(FC), and to preserve intrinsic properties of the SC during fabrication. Large Schottky barriers lead to the formation of high resistive contacts and methods adopted to control the barriers often alter the intrinsic properties of the SC. This work aims at addressing both issues in fully encapsulated monolayer WSe$_2$ FETs by using bi-layer h-BN as a tunnel barrier at the FC/SC interface. We investigate the electrical transport in monolayer WSe$_2$ FETs with current-in-plane geometry that yields hole mobilities $\sim$ 38.3 $cm^{2}V^{-1}s^{-1}$ at 240 K and On/Off ratios of the order of 10$^7$, limited by the contact regions. We have achieved ultralow effective Schottky barrier ($\sim$ 5.34 meV) with encapsulated tunneling device as opposed to a non-encapsulated device in which the barrier heights are considerably higher. These observations provide an insight into the electrical behavior of the FC/h-BN/SC/h-BN heterostructures and such control over the barrier heights opens up the possibilities for WSe$_2$-based spintronic devices.
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Submitted 23 April, 2020;
originally announced April 2020.
