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Large magnetoresistance by Pauli blockade in hydrogenated graphene
Authors:
J. Guillemette,
N. Hemsworth,
A. Vlasov,
J. Kirman,
F. Mahvash,
P. L. Lévesque,
M. Siaj,
R. Martel,
G. Gervais,
S. Studenikin,
A. Sachrajda,
T. Szkopek
Abstract:
We report the observation of a giant positive magnetoresistance in millimetre scale hydrogenated graphene with magnetic field oriented in the plane of the graphene sheet. A positive magnetoresistance in excess of 200\% at a temperature of 300 mK was observed in this configuration, reverting to negative magnetoresistance with the magnetic field oriented normal to the graphene plane. We attribute th…
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We report the observation of a giant positive magnetoresistance in millimetre scale hydrogenated graphene with magnetic field oriented in the plane of the graphene sheet. A positive magnetoresistance in excess of 200\% at a temperature of 300 mK was observed in this configuration, reverting to negative magnetoresistance with the magnetic field oriented normal to the graphene plane. We attribute the observed positive, in-plane, magnetoresistance to Pauli-blockade of hop** conduction induced by spin polarization. Our work shows that spin polarization in concert with electron-electron interaction can play a dominant role in magnetotransport within an atomic monolayer.
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Submitted 22 February, 2018;
originally announced February 2018.
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Suspended graphene variable capacitor
Authors:
M. AbdelGhany,
F. Mahvash,
M. Mukhopadhyay,
A. Favron,
R. Martel,
M. Siaj,
T. Szkopek
Abstract:
The tuning of electrical circuit resonance with a variable capacitor, or varactor, finds wide application with the most important being wireless telecommunication. We demonstrate an electromechanical graphene varactor, a variable capacitor wherein the capacitance is tuned by voltage controlled deflection of a dense array of suspended graphene membranes. The low flexural rigidity of graphene monola…
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The tuning of electrical circuit resonance with a variable capacitor, or varactor, finds wide application with the most important being wireless telecommunication. We demonstrate an electromechanical graphene varactor, a variable capacitor wherein the capacitance is tuned by voltage controlled deflection of a dense array of suspended graphene membranes. The low flexural rigidity of graphene monolayers is exploited to achieve low actuation voltage in an ultra-thin structure. Large arrays comprising thousands of suspensions were fabricated to give a tunable capacitance of over 10 pF/mm$^2$, higher than that achieved by traditional micro-electromechanical system (MEMS) technologies. A capacitance tuning of 55% was achieved with a 10 V actuating voltage, exceeding that of conventional MEMS parallel plate capacitors. Capacitor behavior was investigated experimentally, and described by a simple theoretical model. Mechanical properties of the graphene membranes were measured independently using Atomic Force Microscopy (AFM). Increased graphene conductivity will enable the application of the compact graphene varactor to radio frequency systems.
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Submitted 14 April, 2016;
originally announced April 2016.
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Measurement of Topological Berry Phase in Highly Disordered Graphene
Authors:
K. Bennaceur,
J. Guillemette,
P. L. Lévesque,
N. Cottenye,
F. Mahvash,
N. Hemsworth,
A. Kumar,
Y. Murata,
S. Heun,
M. O. Goerbig,
C. Proust,
M. Siaj,
R. Martel,
G. Gervais,
T. Szkopek
Abstract:
We have observed the quantum Hall effect (QHE) and Shubnikov-de Haas (SdH) oscillations in highly disordered graphene at magnetic fields up to 65 T. Disorder was introduced by hydrogenation of graphene up to a ratio H/C $\approx 0.1\%$. The analysis of SdH oscillations and QHE indicates that the topological part of the Berry phase, proportional to the pseudo-spin winding number, is robust against…
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We have observed the quantum Hall effect (QHE) and Shubnikov-de Haas (SdH) oscillations in highly disordered graphene at magnetic fields up to 65 T. Disorder was introduced by hydrogenation of graphene up to a ratio H/C $\approx 0.1\%$. The analysis of SdH oscillations and QHE indicates that the topological part of the Berry phase, proportional to the pseudo-spin winding number, is robust against introduction of disorder by hydrogenation in large scale graphene.
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Submitted 12 October, 2015;
originally announced October 2015.
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Quantum Hall Effect in Hydrogenated Graphene
Authors:
J. Guillemette,
S. S. Sabri,
B. Wu,
K. Bennaceur,
P. E. Gaskell,
M. Savard,
P. L. Lévesque,
F. Mahvash,
A. Guermoune,
M. Siaj,
R. Martel,
T. Szkopek,
G. Gervais
Abstract:
The quantum Hall effect is observed in a two-dimensional electron gas formed in millimeter-scale hydrogenated graphene, with a mobility less than 10 $\mathrm{cm^{2}/V\cdot s}$ and corresponding Ioffe-Regel disorder parameter $(k_{F}λ)^{-1}\gg1$. In zero magnetic field and low temperatures, the hydrogenated graphene is insulating with a two-point resistance of order of $250 h/e^2$. Application of a…
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The quantum Hall effect is observed in a two-dimensional electron gas formed in millimeter-scale hydrogenated graphene, with a mobility less than 10 $\mathrm{cm^{2}/V\cdot s}$ and corresponding Ioffe-Regel disorder parameter $(k_{F}λ)^{-1}\gg1$. In zero magnetic field and low temperatures, the hydrogenated graphene is insulating with a two-point resistance of order of $250 h/e^2$. Application of a strong magnetic field generates a negative colossal magnetoresistance, with the two-point resistance saturating within 0.5% of $h/2e^{2}$ at 45T. Our observations are consistent with the opening of an impurity-induced gap in the density of states of graphene. The interplay between electron localization by defect scattering and magnetic confinement in two-dimensional atomic crystals is discussed.
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Submitted 7 January, 2013;
originally announced January 2013.
