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Gateway to all-optical spin switching in Heusler ferrimagnets: Pancharatnam-Berry tensor and magnetic moment ratio
Authors:
G. P. Zhang,
Y. Q. Liu,
M. S. Si,
Nicholas Allbritton,
Y. H. Bai,
Wolfgang Hübner,
Thomas F. George
Abstract:
All-optical spin switching (AOS) is a new phenomenon found in a small group of magnetic media, where a single laser pulse can switch spins from one direction to another, without assistance of a magnetic field, on a time scale much shorter than existing magnetic technology. However, despite intensive efforts over a decade, its underlying working principle remains elusive. Here through manganese-bas…
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All-optical spin switching (AOS) is a new phenomenon found in a small group of magnetic media, where a single laser pulse can switch spins from one direction to another, without assistance of a magnetic field, on a time scale much shorter than existing magnetic technology. However, despite intensive efforts over a decade, its underlying working principle remains elusive. Here through manganese-based Heusler ferrimagnets, we show that a group of flat bands around the Fermi level act as gateway states to form efficient channels or spin switching, where their noncentrosymmetry allows us to correlate the spin dynamics to the second-order optical response. To quantify their efficacy, we introduce the third-rank Pancharatnam-Berry tensor (PB tensor), $\boldsymbolη^{(3)}=\langle i |{\bf p} |m\rangle \langle m|{\bf p} |f\rangle \langle f|{\bf p} |i\rangle,$ where $|i\rangle$, $|m\rangle$ and $|f\rangle$ are initial, intermediate and final band states, respectively, and ${\bf p}$ is the momentum operator. A picture emerges: Those which show AOS, such as the recently discovered Mn$_2$RuGa, always have a large PB tensor element} but have a small sublattice spin moment ratio, consistent with the prior experimental small remanence criterion. This does not only reveal that the delicate balance between the large PB tensor element and the small sublattice spin ratio plays a decisive role in AOS, but also, conceptually, connects the $n$th-order nonlinear optics to $(n+1)$th-rank PB tensors in general.
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Submitted 16 June, 2024;
originally announced June 2024.
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Nonlinear harmonic spectra in bilayer van der Waals antiferromagnets CrX$_{3}$
Authors:
Y. Q. Liu,
M. S. Si,
G. P. Zhang
Abstract:
Bilayer antiferromagnets CrX$_{3}$ (X $=$ Cl, Br, and I) are promising materials for spintronics and optoelectronics that are rooted in their peculiar electronic structures. However, their bands are often hybridized from the interlayer antiferromagnetic ordering, which are difficult to disentangle by traditional methods. In this work, we theoretically show that nonlinear harmonic spectra can diffe…
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Bilayer antiferromagnets CrX$_{3}$ (X $=$ Cl, Br, and I) are promising materials for spintronics and optoelectronics that are rooted in their peculiar electronic structures. However, their bands are often hybridized from the interlayer antiferromagnetic ordering, which are difficult to disentangle by traditional methods. In this work, we theoretically show that nonlinear harmonic spectra can differentiate subtle differences in their electronic states. In contrast to prior nonlinear optical studies which often use one or two photon energies, we systematically study the wavelength-dependent nonlinear harmonic spectra realized by hundreds of individual dynamical simulations under changed photon energies. Through turning on and off some excitation channels, we can pinpoint every dipole-allowed transition that largely contributes to the second and third harmonics. With the help of momentum matrix elements, highly entangled resonance peaks at a higher energy above the band edge can be assigned to specific transitions between the valence bands and three separate regions of conduction bands. Our findings demonstrate a feasible means to detect very complex electronic structures in an important family of two-dimensional antiferromagnets.
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Submitted 17 February, 2024;
originally announced February 2024.
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Strong and nearly 100$\%$ spin-polarized second-harmonic generation from ferrimagnet Mn$_{2}$RuGa
Authors:
Y. Q. Liu,
M. S. Si,
G. P. Zhang
Abstract:
Second-harmonic generation (SHG) has emerged as a promising tool for detecting electronic and magnetic structures in noncentrosymmetric materials, but 100$\%$ spin-polarized SHG has not been reported. In this work, we demonstrate nearly 100$\%$ spin-polarized SHG from half-metallic ferrimagnet Mn$_{2}$RuGa. A band gap in the spin-down channel suppresses SHG, so the spin-up channel contributes near…
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Second-harmonic generation (SHG) has emerged as a promising tool for detecting electronic and magnetic structures in noncentrosymmetric materials, but 100$\%$ spin-polarized SHG has not been reported. In this work, we demonstrate nearly 100$\%$ spin-polarized SHG from half-metallic ferrimagnet Mn$_{2}$RuGa. A band gap in the spin-down channel suppresses SHG, so the spin-up channel contributes nearly all the signal, as large as 3614 pm/V about 10 times larger than that of GaAs. In the spin-up channel, $χ_{xyz}^{(2)}$ is dominated by the large intraband current in three highly dispersed bands near the Fermi level. With the spin-orbit coupling (SOC), the reduced magnetic point group allows additional SHG components, where the interband contribution is enhanced. Our finding is important as it predicts a large and complete spin-polarized SHG in a all-optical spin switching ferrimagnet. This opens the door for future applications.
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Submitted 5 September, 2023;
originally announced September 2023.
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First-principles insights into all-optical spin switching in the half-metallic Heusler ferrimagnet Mn$_2$RuGa
Authors:
G. P. Zhang,
Y. H. Bai,
M. S. Si,
Thomas F. George
Abstract:
All-optical spin switching (AOS) represents a new frontier in magnetic storage technology -- spin manipulation without a magnetic field, -- but its underlying working principle is not well understood. Many AOS ferrimagnets such as GdFeCo are amorphous and renders the high-level first-principles study unfeasible. The crystalline half-metallic Heusler Mn$_2$RuGa presents an opportunity. Here we carr…
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All-optical spin switching (AOS) represents a new frontier in magnetic storage technology -- spin manipulation without a magnetic field, -- but its underlying working principle is not well understood. Many AOS ferrimagnets such as GdFeCo are amorphous and renders the high-level first-principles study unfeasible. The crystalline half-metallic Heusler Mn$_2$RuGa presents an opportunity. Here we carry out hitherto the comprehensive density functional investigation into the material properties of Mn$_2$RuGa, and introduce two concepts - the spin anchor site and the optical active site - as two pillars for AOS in ferrimagnets. In Mn$_2$RuGa, Mn$(4a)$ serves as the spin anchor site, whose band structure is below the Fermi level and has a strong spin moment, while Mn$(4c)$ is the optical active site whose band crosses the Fermi level. Our magneto-optical Kerr spectrum and band structure calculation jointly reveal that the delicate competition between the Ru-$4d$ and Ga-$4p$ states is responsible for the creation of these two sites. These two sites found here not only present a unified picture for both Mn$_2$RuGa and GdFeCo, but also open the door for the future applications. Specifically, we propose a Mn$_2$Ru$_x$Ga-based magnetic tunnel junction where a single laser pulse can control magnetoresistance.
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Submitted 21 July, 2022;
originally announced July 2022.
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Generating high-order optical and spin harmonics from ferromagnetic monolayers
Authors:
G. P. Zhang,
M. S. Si,
M. Murakami,
Y. H. Bai,
Thomas F. George
Abstract:
High-order harmonic generation (HHG) in solids has entered a new phase of intensive research, with envisioned band-structure map** on an ultrashort time scale. This partly benefits from a flurry of new HHG materials discovered, but so far has missed an important group. HHG in magnetic materials should have profound impact on future magnetic storage technology advances. Here we introduce and demo…
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High-order harmonic generation (HHG) in solids has entered a new phase of intensive research, with envisioned band-structure map** on an ultrashort time scale. This partly benefits from a flurry of new HHG materials discovered, but so far has missed an important group. HHG in magnetic materials should have profound impact on future magnetic storage technology advances. Here we introduce and demonstrate HHG in ferromagnetic monolayers. We find that HHG carries spin information and sensitively depends on the relativistic spin-orbit coupling; and if they are dispersed into the crystal momentum ${\bf k}$ space, harmonics originating from real transitions can be ${\bf k}$-resolved and carry the band structure information. Geometrically, the HHG signal is sensitive to spatial orientations of monolayers. Different from the optical counterpart, the spin HHG, though probably weak, only appears at even orders, a consequence of SU(2) symmetry. Our findings open an unexplored frontier -- magneto-high-order harmonic generation.
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Submitted 3 September, 2018;
originally announced September 2018.
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Understanding all-optical spin switching: Comparison between experiment and theory
Authors:
G. P. Zhang,
M. Murakami,
M. S. Si,
Y. H. Bai,
Thomas F. George
Abstract:
Information technology depends on how one can control and manipulate signals accurately and quickly. Transistors are at the core of modern technology and are based on electron charges. But as the device dimension shrinks, heating becomes a major problem. The spintronics explores the spin degree of electrons and thus bypasses the heat, at least in principle. For this reason, spin-based technology o…
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Information technology depends on how one can control and manipulate signals accurately and quickly. Transistors are at the core of modern technology and are based on electron charges. But as the device dimension shrinks, heating becomes a major problem. The spintronics explores the spin degree of electrons and thus bypasses the heat, at least in principle. For this reason, spin-based technology offers a possible solution. In this review, we survey some of latest developments in all-optical switching (AOS), where ultrafast laser pulses are able to reverse spins from one direction to the other deterministically. But AOS only occurs in a special group of magnetic samples and within a narrow window of laser parameters. Some samples need multiple pulses to switch spins, while others need a single-shot pulse. To this end, there are several models available, but the underlying mechanism is still under debate. This review is different from other prior reviews in two aspects. First, we sacrifice the completeness of reviewing existing studies, while focusing on a limited set of experimental results that are highly reproducible in different labs and provide actual switched magnetic domain images. Second, we extract the common features from existing experiments that are critical to AOS, without favoring a particular switching mechanism. We emphasize that given the limited experimental data, it is really premature to identify a unified mechanism. We compare these features with our own model prediction, without resorting to a phenomenological scheme. We hope that this review serves the broad readership well.
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Submitted 7 October, 2018; v1 submitted 21 August, 2018;
originally announced August 2018.
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Laser-induced ultrafast demagnetization time and spin moment in ferromagnets: First-principles calculation
Authors:
G. P. Zhang,
M. S. Si,
Thomas F. George
Abstract:
When a laser pulse excites a ferromagnet, its spin undergoes a dramatic change. The initial demagnetization process is very fast. Experimentally, it is found that the demagnetization time is related to the spin moment in the sample. In this study, we employ the first-principles method to directly simulate such a process. We use the fixed spin moment method to change the spin moment in ferromagneti…
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When a laser pulse excites a ferromagnet, its spin undergoes a dramatic change. The initial demagnetization process is very fast. Experimentally, it is found that the demagnetization time is related to the spin moment in the sample. In this study, we employ the first-principles method to directly simulate such a process. We use the fixed spin moment method to change the spin moment in ferromagnetic nickel, and then we employ the Liouville equation to couple the laser pulse to the system. We find that in general the dependence of demagnetization time on the spin moment is nonlinear: It decreases with the spin moment up to a point, after which an increase with the spin moment is observed, followed by a second decrease. To understand this, we employ an extended Heisenberg model, which includes both the exchange interaction and spin-orbit coupling. The model directly links the demagnetization rate to the spin moment itself and demonstrates analytically that the spin relaxes more slowly with a small spin moment. A future experimental test of our predictions is needed.
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Submitted 9 November, 2016;
originally announced November 2016.
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A large enhancement of carrier mobility in phosphorene by introducing hexagonal boron nitride substrate
Authors:
Jiafeng Xie,
Z. Y. Zhang,
D. Z. Yang,
M. S. Si,
D. S. Xue,
Xiaohui Deng
Abstract:
Carrier mobility is a crucial character for electronic devices since it domains power dissipation and switching speed. Materials with certain high carrier mobility, equally, unveil rich unusual physical phenomena elusive in their conventional counterparts. As a consequence, the methods to enhance the carrier mobility of materials receive immense research interests due to their potential applicatio…
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Carrier mobility is a crucial character for electronic devices since it domains power dissipation and switching speed. Materials with certain high carrier mobility, equally, unveil rich unusual physical phenomena elusive in their conventional counterparts. As a consequence, the methods to enhance the carrier mobility of materials receive immense research interests due to their potential applications in more effective electronic devices and enrichment of more unusual phenomena. For instance, introducing a flat hexagonal boron nitride (h-BN) substrate to enhance the carrier mobility has been achieved experimentally. However, the underlying mechanics is not well understood. In this study, we estimate the carrier mobility of phosphorene on h-BN substrate (P/h-BN) within the framework of the phonon-limited scattering model at first-principles level. %Our results are generic. Besides high-$κ$ dielectric property, h-BN also possesses excellent mechanical property of a high two-dimensional elastic modulus. The P/h-BN heterostructure inherits the high elastic modulus of h-BN, leading to an enhanced carrier mobility in phosphorene. Owing to the weak van der Waals interactions between the layers, the unique electronic properties of phosphorene are almost perfectly preserved near the Fermi level, guaranteeing the superior electronic transport in P/h-BN. Our findings offer a new perspective to improve the carrier mobility in phosphorene as well as other 2D materials based field effect transistors.
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Submitted 6 April, 2017; v1 submitted 11 October, 2016;
originally announced October 2016.
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Magnetic spin moment reduction in photoexcited ferromagnets through exchange interaction quenching: Beyond the rigid band approximation
Authors:
G. P. Zhang,
M. S. Si,
Y. H. Bai,
Thomas F. George
Abstract:
The exchange interaction among electrons is one of the most fundamental quantum mechanical interactions in nature and underlies any magnetic phenomena from ferromagnetic ordering to magnetic storage. The current technology is built upon a thermal or magnetic field, but a frontier is emerging to directly control magnetism using ultrashort laser pulses. However, little is known about the fate of the…
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The exchange interaction among electrons is one of the most fundamental quantum mechanical interactions in nature and underlies any magnetic phenomena from ferromagnetic ordering to magnetic storage. The current technology is built upon a thermal or magnetic field, but a frontier is emerging to directly control magnetism using ultrashort laser pulses. However, little is known about the fate of the exchange interaction. Here we report unambiguously that photoexcitation is capable of quenching the exchange interaction in all three $3d$ ferromagnetic metals. The entire process starts with a small number of photoexcited electrons which build up a new and self-destructive potential that collapses the system into a new state with a reduced exchange splitting. The spin moment reduction follows a Bloch-like law as $M_z(ΔE)=M_z(0)(1-{ΔE}/{ΔE_0})^{\frac{1}β}$, where $ΔE$ is the absorbed photon energy and $β$ is a scaling exponent. A good agreement is found between the experimental and our theoretical results. Our findings may have a broader implication for dynamic electron correlation effects in laser-excited iron-based superconductors, iron borate, rare-earth orthoferrites, hematites and rare-earth transition metal alloys.
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Submitted 7 May, 2015;
originally announced May 2015.
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Orientation and strain modulated electronic structures in puckered arsenene nanoribbons
Authors:
Z. Y. Zhang,
H. N. Cao,
J. C. Zhang,
Y. H. Wang,
D. S. Xue,
M. S. Si
Abstract:
Orthorhombic arsenene was recently predicted as an indirect bandgap semiconductor. Here, we demonstrate that nanostructuring arsenene into nanoribbons can successfully transform the bandgap to be direct. It is found that direct bandgaps hold for narrow armchair but wide zigzag nanoribbons, which is dominated by the competition between the in-plane and out-of-plane bondings. Moreover, straining the…
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Orthorhombic arsenene was recently predicted as an indirect bandgap semiconductor. Here, we demonstrate that nanostructuring arsenene into nanoribbons can successfully transform the bandgap to be direct. It is found that direct bandgaps hold for narrow armchair but wide zigzag nanoribbons, which is dominated by the competition between the in-plane and out-of-plane bondings. Moreover, straining the nanoribbons also induces a direct bandgap and simultaneously modulates effectively the transport property. The gap energy is largely enhanced by applying tensile strains to the armchair structures. In the zigzag ones, a tensile strain makes the effective mass of holes much higher while a compressive strain cause it much lower than that of electrons. Our results are crutial to understand and engineer the electronic properties of two dimensional materials beyond the planar ones like graphene.
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Submitted 5 February, 2015; v1 submitted 24 January, 2015;
originally announced January 2015.
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Negative Poisson's ratios in few-layer orthorhombic arsenic from first-principles calculations
Authors:
Jianwei Han,
Jiafeng Xie,
Z. Y. Zhang,
D. Z. Yang,
M. S. Si,
D. S. Xue
Abstract:
A material exhibiting a negative Poisson's ratio is always one of the leading topics in materials science, which is due to the potential applications in those special areas such as defence and medicine. In this letter, we demonstrate a new material, few-layer orthorhombic arsenic, also possesses the negative Poisson's ratio. For monolayer arsenic, the negative Poisson's ratio is predicted to be ar…
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A material exhibiting a negative Poisson's ratio is always one of the leading topics in materials science, which is due to the potential applications in those special areas such as defence and medicine. In this letter, we demonstrate a new material, few-layer orthorhombic arsenic, also possesses the negative Poisson's ratio. For monolayer arsenic, the negative Poisson's ratio is predicted to be around -0.09, originated from the hinge-like structure within the single layer of arsenic. When the layer increases, the negative Poisson's ratio becomes more negative and finally approaches the limit at four-layer, which is very close to the bulk's value of -0.12. The underlying mechanism is proposed for this layer-dependent negative Poisson's ratio, where the internal bond lengths as well as the normal Poisson's ratio within layer play a key role. The study like ours sheds new light on the physics of negative Poisson's ratio in those hinge-like nano-materials.
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Submitted 7 January, 2015;
originally announced January 2015.
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Manifestation of unexpected semiconducting properties in few-layer orthorhombic arsenene
Authors:
Z. Y. Zhang,
Jiafeng Xie,
D. Z. Yang,
Y. H. Wang,
M. S. Si,
D. S. Xue
Abstract:
In this express, we demonstrate few-layer orthorhombic arsenene is an ideal semiconductor. Due to the layer stacking, multilayer arsenenes always behave as intrinsic direct bandgap semiconductors with gap values of around 1 eV. In addition, these bandgaps can be further tuned in its nanoribbons. Based on the so-called acoustic phonon limited approach, the carrier mobilities are predicted to approa…
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In this express, we demonstrate few-layer orthorhombic arsenene is an ideal semiconductor. Due to the layer stacking, multilayer arsenenes always behave as intrinsic direct bandgap semiconductors with gap values of around 1 eV. In addition, these bandgaps can be further tuned in its nanoribbons. Based on the so-called acoustic phonon limited approach, the carrier mobilities are predicted to approach as high as several thousand square centimeters per volt-second and simultaneously exhibit high directional anisotropy. All these make few-layer arsenene promising for device applications in semiconducting industry.
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Submitted 19 April, 2015; v1 submitted 12 November, 2014;
originally announced November 2014.
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A theoretical study of blue phosphorene nanoribbons based on first-principles calculations
Authors:
Jiefeng Xie,
M. S. Si,
D. Z. Yang,
Z. Y. Zhang,
D. S. Xue
Abstract:
Based on first-principles calculations, we present a quantum confinement mechanism for the band gaps of blue phosphorene nanoribbons (BPNRs) as a function of their widths. The BPNRs considered have either armchair or zigzag shaped edges on both sides with hydrogen saturation. Both the two types of nanoribbons are shown to be indirect semiconductors. An enhanced energy gap of around 1 eV can be rea…
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Based on first-principles calculations, we present a quantum confinement mechanism for the band gaps of blue phosphorene nanoribbons (BPNRs) as a function of their widths. The BPNRs considered have either armchair or zigzag shaped edges on both sides with hydrogen saturation. Both the two types of nanoribbons are shown to be indirect semiconductors. An enhanced energy gap of around 1 eV can be realized when the width decreases to about 10 ang. The underlying physics is ascribed to the quantum confinement. More importantly, the quantum confinement parameters are obtained by fitting the calculated gaps with respect to their widths. The results show that the quantum confinement in armchair nanoribbons is stronger than that in zigzag ones. This study provides an efficient approach to tune the energy gap in BPNRs.
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Submitted 17 May, 2014;
originally announced May 2014.
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Manipulating femtosecond magnetism through pressure: First-principles calculations
Authors:
M. S. Si,
J. Y. Li,
D. S. Xue,
G. P. Zhang
Abstract:
Inspired by a recent pressure experiment in fcc Ni, we propose a simple method to use pressure to investigate the laser-induced femtosecond magnetism. Since the pressure effect on the electronic and magnetic properties can be well controlled experimentally, this leaves little room for ambiguity when compared with theory. Here we report our theoretical pressure results in fcc Ni: Pressure first sup…
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Inspired by a recent pressure experiment in fcc Ni, we propose a simple method to use pressure to investigate the laser-induced femtosecond magnetism. Since the pressure effect on the electronic and magnetic properties can be well controlled experimentally, this leaves little room for ambiguity when compared with theory. Here we report our theoretical pressure results in fcc Ni: Pressure first suppresses the spin moment reduction, and then completely diminishes it; further increase in pressure to 40 GPa induces a demagnetization-to-magnetization transition. To reveal its microscopic origin, we slide through the L-U line in the Brillouin zone and find two essential transitions are responsible for this change, where the pressure lowers two valence bands, resulting in an off-resonant excitation and thus a smaller spin moment reduction. In the spin-richest L-W-W' plane, two spin contours are formed; as pressure increases, the contour size retrieves and its intensity is reduced to zero eventually, fully consistent with the spin-dipole factor prediction. These striking features are detectable in time- and spin-resolved photoemission experiments.
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Submitted 24 October, 2013;
originally announced October 2013.
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Hot spin spots in the laser-induced demagnetization
Authors:
M. S. Si,
G. P. Zhang
Abstract:
Laser-induced femtosecond magnetism or femtomagnetism simultaneously relies on two distinctive contributions: (a) the optical dipole interaction (ODI) between a laser field and a magnetic system and (b) the spin expectation value change (SEC) between two transition states. Surprisingly, up to now, no study has taken both contributions into account simultaneously. Here we do so by introducing a new…
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Laser-induced femtosecond magnetism or femtomagnetism simultaneously relies on two distinctive contributions: (a) the optical dipole interaction (ODI) between a laser field and a magnetic system and (b) the spin expectation value change (SEC) between two transition states. Surprisingly, up to now, no study has taken both contributions into account simultaneously. Here we do so by introducing a new concept of the optical spin generator, a product of SEC and ODI between transition states. In ferromagnetic nickel, our first-principles calculation demonstrates that the larger the value of optical spin generator is, the larger the dynamic spin moment change is. This simple generator directly links the time-dependent spin moment change ΔMk z (t) at every crystal- momentum k point to its intrinsic electronic structure and magnetic properties. Those hot spin spots are a direct manifestation of the optical spin generator, and should be the focus of future research.
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Submitted 19 February, 2012;
originally announced February 2012.
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Laser-induced spin protection and switching in a specially designed magnetic dot: A theoretical investigation
Authors:
G. P. Zhang,
M. S. Si,
T. F. George
Abstract:
Most laser-induced femtosecond magnetism investigations are done in magnetic thin films. Nanostructured magnetic dots, with their reduced dimensionality, present new opportunities for spin manipulation. Here we predict that if a magnetic dot has a dipole-forbidden transition between the lowest occupied molecular orbital (LUMO) and the highest unoccupied molecular orbital (HOMO), but a dipole-allow…
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Most laser-induced femtosecond magnetism investigations are done in magnetic thin films. Nanostructured magnetic dots, with their reduced dimensionality, present new opportunities for spin manipulation. Here we predict that if a magnetic dot has a dipole-forbidden transition between the lowest occupied molecular orbital (LUMO) and the highest unoccupied molecular orbital (HOMO), but a dipole-allowed transition between LUMO+1 and HOMO, electromagnetically inducedtransparency can be used to prevent ultrafast laser-induced spin momentum reduction, or spin protection. This is realized through a strong dump pulse to funnel the population into LUMO+1. If the time delay between the pump and dump pulses is longer than 60 fs, a population inversion starts and spin switching is achieved. Thesepredictions are detectable experimentally.
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Submitted 7 April, 2011;
originally announced April 2011.
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Resolving photon-shortage mystery in femtosecond magnetism
Authors:
M. S. Si,
G. P. Zhang
Abstract:
For nearly a decade, it has been a mystery why the small average number of photons absorbed per atom from an ultrashort laser pulse is able to induce a strong magnetization within a few hundred femtoseconds. Here we resolve this mystery by directly computing the number of photons per atom layer by layer as the light wave propagates inside the sample. We find that for all the 24 experiments consi…
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For nearly a decade, it has been a mystery why the small average number of photons absorbed per atom from an ultrashort laser pulse is able to induce a strong magnetization within a few hundred femtoseconds. Here we resolve this mystery by directly computing the number of photons per atom layer by layer as the light wave propagates inside the sample. We find that for all the 24 experiments considered here, each atom has more than one photon. The so-called photon shortage does not exist. By plotting the relative demagnetization change versus the number of photons absorbed per atom, we show that depending on the experimental condition, 0.1 photon can induce about 4% to 72% spin moment change. Our perturbation theory reveals that the demagnetization depends linearly on the amplitude of laser field. In addition, we find that the transition frequency of a sample may also play a role in magnetization processes. As far as the intensity is not zero, the intensity of the laser field only affects the matching range of the transition frequencies, but not whether the demagnetization can happen or not.
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Submitted 19 January, 2010;
originally announced January 2010.
