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Investigation of Spin-Pum** and -Transport in the Ni80Fe20/Pt/Co Asymmetric Trilayer
Authors:
Shilpa Samdani,
Yaqi Rong,
Birte Coester,
Amit Kumar Shukla,
Lew Wen Siang,
Yumeng Yang,
Rajdeep Singh Rawat
Abstract:
FM1/NM/FM2 trilayers have garnered considerable attention because of their potential in spintronic applications. A thorough investigation of the spin transport properties of these trilayers is therefore important. Asymmetric trilayers, particularly those including Platinum (Pt) as a spacer are less explored. Pt mediates exchange coupling between the two FM layers and thus offers a unique platform…
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FM1/NM/FM2 trilayers have garnered considerable attention because of their potential in spintronic applications. A thorough investigation of the spin transport properties of these trilayers is therefore important. Asymmetric trilayers, particularly those including Platinum (Pt) as a spacer are less explored. Pt mediates exchange coupling between the two FM layers and thus offers a unique platform to investigate the spin-transport properties under indirect exchange coupling conditions through the spin-pum** mechanism. Our analytical focus on the acoustic mode of the ferromagnetic resonance spectrum, facilitated by the distinct magnetizations of the Ni80Fe20 and Co layers, allows for the isolation of individual layer resonances. The derived spin-pum** induced dam** of the Ni80Fe20 and Co layers reveals a direct dependence on the Pt spacer thickness. Furthermore, fitting of the weighted average of the dam** parameters to the spin-pum** induced dam** of acoustic mode reveals that the observed FMR spectra is indeed a result of the in-phase precession of the magnetizations in two FM layers. The extracted effective spin-mixing conductance varies with the FM/NM interface, specifically 1.72x10^19 m^(-2) at the Ni80Fe20/Pt and 4.07x10^19 m^(-2) at the Co/Pt interface, indicating a strong correlation with interfacial characteristics. Additionally, we deduce the spin diffusion length in Pt to be between 1.02 and 1.55 nm and calculate the interfacial spin transparency and spin current densities, highlighting significant disparities between the Ni80Fe20/Pt and Co/Pt interfaces. This detailed analysis enhances our understanding of spin transport in Ni80Fe20/Pt/Co trilayers. It offers insights important for advancing spintronic device design and lays the groundwork for future theoretical investigations of trilayer system.
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Submitted 18 April, 2024;
originally announced April 2024.
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On $(θ, Θ)$-cyclic codes and their applications in constructing QECCs
Authors:
Awadhesh Kumar Shukla,
Sachin Pathak,
Om Prakash Pandey,
Vipul Mishra,
Ashish Kumar Upadhyay
Abstract:
Let $\mathbb F_q$ be a finite field, where $q$ is an odd prime power. Let $R=\mathbb{F}_q+u\mathbb{F}_q+v\mathbb{F}_q+uv\mathbb F_q$ with $u^2=u,v^2=v,uv=vu$. In this paper, we study the algebraic structure of $(θ, Θ)$-cyclic codes of block length $(r,s )$ over $\mathbb{F}_qR.$ Specifically, we analyze the structure of these codes as left $R[x:Θ]$-submodules of…
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Let $\mathbb F_q$ be a finite field, where $q$ is an odd prime power. Let $R=\mathbb{F}_q+u\mathbb{F}_q+v\mathbb{F}_q+uv\mathbb F_q$ with $u^2=u,v^2=v,uv=vu$. In this paper, we study the algebraic structure of $(θ, Θ)$-cyclic codes of block length $(r,s )$ over $\mathbb{F}_qR.$ Specifically, we analyze the structure of these codes as left $R[x:Θ]$-submodules of $\mathfrak{R}_{r,s} = \frac{\mathbb{F}_q[x:θ]}{\langle x^r-1\rangle} \times \frac{R[x:Θ]}{\langle x^s-1\rangle}$. Our investigation involves determining generator polynomials and minimal generating sets for this family of codes. Further, we discuss the algebraic structure of separable codes. A relationship between the generator polynomials of $(θ, Θ)$-cyclic codes over $\mathbb F_qR$ and their duals is established. Moreover, we calculate the generator polynomials of dual of $(θ, Θ)$-cyclic codes. As an application of our study, we provide a construction of quantum error-correcting codes (QECCs) from $(θ, Θ)$-cyclic codes of block length $(r,s)$ over $\mathbb{F}_qR$. We support our theoretical results with illustrative examples.
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Submitted 31 March, 2024;
originally announced April 2024.
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Design, fabrication, and performance of a versatile graphene epitaxy system for the growth of epitaxial graphene on SiC
Authors:
S. Mondal,
U. J. Jayalekshmi,
S. Singh,
R. K. Mukherjee,
A. K Shukla
Abstract:
A versatile Graphene Epitaxy (GrapE) furnace has been designed and fabricated for the growth of epitaxial graphene (EG) on silicon carbide (SiC) under diverse growth environments ranging from high vacuum to atmospheric argon pressure. Radio-frequency (RF) induction enables heating capabilities up to 2000°C, with controlled heating ramp rates achievable up to 200°C/s. Details of critical design asp…
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A versatile Graphene Epitaxy (GrapE) furnace has been designed and fabricated for the growth of epitaxial graphene (EG) on silicon carbide (SiC) under diverse growth environments ranging from high vacuum to atmospheric argon pressure. Radio-frequency (RF) induction enables heating capabilities up to 2000°C, with controlled heating ramp rates achievable up to 200°C/s. Details of critical design aspects and temperature characteristics of the GrapE system are discussed. The GrapE system, being automated, has enabled the growth of high-quality EG monolayers and turbostratic EG on SiC using diverse methodologies such as close confinement sublimation (CCS), open configuration, polymer-assisted CCS, and rapid thermal annealing. This showcases the versatility of the GrapE system in EG growth. Comprehensive characterizations involving atomic force microscopy, Raman spectroscopy, and low-energy electron diffraction techniques were employed to validate the quality of the produced EG.
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Submitted 4 March, 2024;
originally announced March 2024.
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On incomplete exponential $\;_{r}R_{s}(P,Q,z)$ matrix function
Authors:
Ayman Shehata,
Ghazi S. Khammsh,
Ajay K. Shukla,
Shimaa I. Moustafa
Abstract:
The recurrence matrix relations, differentiation formulas, and analytical and fractional integral properties of incomplete gamma matrix functions $γ(Q, x)$ and $Γ(Q, x)$ are all covered in this article. The generalized incomplete exponential matrix functions with their integral representations functions have been examined, along with some relevant characteristics of these functions such as integra…
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The recurrence matrix relations, differentiation formulas, and analytical and fractional integral properties of incomplete gamma matrix functions $γ(Q, x)$ and $Γ(Q, x)$ are all covered in this article. The generalized incomplete exponential matrix functions with their integral representations functions have been examined, along with some relevant characteristics of these functions such as integral representations functions . Additionally, the infinite summation relations and formulas for two sequences are shown, along with the generalized incomplete exponential matrix functions with the integral representation, addition formula for addition of two arguments, multiplication formula for multiplication of two arguments, and recurrence matrix relation.
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Submitted 19 August, 2023;
originally announced August 2023.
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Hardware in Loop Learning with Spin Stochastic Neurons
Authors:
A N M Nafiul Islam,
Kezhou Yang,
Amit K. Shukla,
Pravin Khanal,
Bowei Zhou,
Wei-Gang Wang,
Abhronil Sengupta
Abstract:
Despite the promise of superior efficiency and scalability, real-world deployment of emerging nanoelectronic platforms for brain-inspired computing have been limited thus far, primarily because of inter-device variations and intrinsic non-idealities. In this work, we demonstrate mitigating these issues by performing learning directly on practical devices through a hardware-in-loop approach, utiliz…
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Despite the promise of superior efficiency and scalability, real-world deployment of emerging nanoelectronic platforms for brain-inspired computing have been limited thus far, primarily because of inter-device variations and intrinsic non-idealities. In this work, we demonstrate mitigating these issues by performing learning directly on practical devices through a hardware-in-loop approach, utilizing stochastic neurons based on heavy metal/ferromagnetic spin-orbit torque heterostructures. We characterize the probabilistic switching and device-to-device variability of our fabricated devices of various sizes to showcase the effect of device dimension on the neuronal dynamics and its consequent impact on network-level performance. The efficacy of the hardware-in-loop scheme is illustrated in a deep learning scenario achieving equivalent software performance. This work paves the way for future large-scale implementations of neuromorphic hardware and realization of truly autonomous edge-intelligent devices.
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Submitted 21 March, 2024; v1 submitted 4 May, 2023;
originally announced May 2023.
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Proton Improvement Plan II Cryogenic Distribution System thermodynamic design
Authors:
Ashish Kumar Shukla,
Andrew Dalesandro,
Ram Dhuley,
William Soyars
Abstract:
The Proton Improvement Plan II (PIPII) is a superconducting linear accelerator being built at Fermilab that will provide 800 MeV proton beams for neutrino production. The Linac requires cooling at 80 K, 5 K, and 2 K temperatures, which will be provided by cryogenic helium produced by a Helium Cryoplant and distributed by a Cryogenic Distribution System (CDS). Based primarily on the Linac heat load…
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The Proton Improvement Plan II (PIPII) is a superconducting linear accelerator being built at Fermilab that will provide 800 MeV proton beams for neutrino production. The Linac requires cooling at 80 K, 5 K, and 2 K temperatures, which will be provided by cryogenic helium produced by a Helium Cryoplant and distributed by a Cryogenic Distribution System (CDS). Based primarily on the Linac heat load requirements at each temperature and the allowable pressure drop, we have made a preliminary thermodynamic design of the CDS. The design also incorporates special requirements such as controlled and or fast cooldown of the superconducting RF cavities and their dual maximum allowable working pressure. This paper presents the overall features of the PIPII CDS, sizing of helium process circuits, different operating modes, and calculated mass flow capacities that cater to these operating modes.
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Submitted 22 June, 2022;
originally announced June 2022.
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Structure, magnetism and electronic properties in 3$d$-5$d$ based double perovskite (Sr$_{1-x}$Ca$_x$)$_2$FeIrO$_6$ (0 $\leq$ $x$ $\leq$ 1): A combined experimental and theoretical investigation
Authors:
K. C. Kharkwal,
Roumita Roy,
Harish Kumar,
A. K. Bera,
S. M. Yusuf,
A. K. Shukla,
Kranti Kumar,
Sudipta Kanungo,
A. K. Pramanik
Abstract:
The 3$d$-5$d$ based double perovskites offer an ideal playground to study the interplay between electron correlation ($U$) and spin-orbit coupling (SOC) effect, showing exotic physics. The Sr$_2$FeIrO$_6$ is an interesting member in this family with ionic distribution of Fe$^{3+}$ (3$d^5$) and Ir$^{5+}$ (5$d^4$) where the later is believed to be nonmagnetic under the picture of strong SOC. Here, w…
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The 3$d$-5$d$ based double perovskites offer an ideal playground to study the interplay between electron correlation ($U$) and spin-orbit coupling (SOC) effect, showing exotic physics. The Sr$_2$FeIrO$_6$ is an interesting member in this family with ionic distribution of Fe$^{3+}$ (3$d^5$) and Ir$^{5+}$ (5$d^4$) where the later is believed to be nonmagnetic under the picture of strong SOC. Here, we report detailed investigation of structural, magnetic and electronic transport properties along with electronic structure calculations in (Sr$_{1-x}$Ca$_x$)$_2$FeIrO$_6$ series with $x$ from 0 to 1. While the basic interactions such as, $U$ and SOC are unlikely to be modified but a structural modification is expected due to ionic size difference between Sr$^{2+}$ and Ca$^{2+}$ which would influence other properties such as crystal field effect and band widths. While a nonmonotonic changes in lattice parameters are observed across the series, the spectroscopic investigations reveal that 3+/5+ charge state of Fe/Ir continue till end of the series. An analysis of magnetic data suggests similar nonmonotonic evolution of magnetic parameters with do**. Temperature dependent crystal structure as well as low temperature (5 K) magnetic structure have been determined from neutron powder diffraction measurements. The whole series shows insulating behavior. The electronic structure calculations show, SOC enhanced, a noncollinear antiferromagnetic and Mott-type insulating state is the stable ground state for present series with a substantial amount of orbital moment, but less than the spin magnetic moment, at the Ir site and the magnetocrystalline anisotropy. The obtained results imply that the Ca$^{2+}$ has large influence on the magnetic and transport properties, further showing a large agreement between experimental results as well as theoretical calculations.
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Submitted 21 October, 2020;
originally announced October 2020.
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Essential dimension of double covers of symmetric and alternating groups
Authors:
Zinovy Reichstein,
Abhishek Kumar Shukla
Abstract:
I. Schur studied double covers $\widetilde{\Sym}^{\pm}_n$ and $\widetilde{\Alt}_n$ of symmetric groups $\Sym_n$ and alternating groups $\Alt_n$, respectively. Representations of these groups are closely related to projective representations of $\Sym_n$ and $\Alt_n$; there is also a close relationship between these groups and spinor groups. We study the essential dimension…
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I. Schur studied double covers $\widetilde{\Sym}^{\pm}_n$ and $\widetilde{\Alt}_n$ of symmetric groups $\Sym_n$ and alternating groups $\Alt_n$, respectively. Representations of these groups are closely related to projective representations of $\Sym_n$ and $\Alt_n$; there is also a close relationship between these groups and spinor groups. We study the essential dimension $\ed(\widetilde{\Sym}^{\pm}_n)$ and $\ed(\widetilde{\Alt}_n)$. We show that over a base field of characteristic $\neq 2$, $\ed(\widetilde{\Sym}^{\pm}_n)$ and $\ed(\widetilde{\Alt}_n)$ grow exponentially with $n$, similar to $\ed(\Spin_n)$. On the other case, in characteristic $2$, they grow sublinearly, similar to $\ed(\Sym_n)$ and $\ed(\Alt_n)$. We give an application of our result in good characteristic to the theory of trace forms.
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Submitted 9 June, 2019;
originally announced June 2019.
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Classifying spaces for étale algebras with generators
Authors:
Abhishek Kumar Shukla,
Ben Williams
Abstract:
We construct varieties B(r;An) such that a map X -> B(r;An) corresponds to a degree-n étale algebra on X equipped with r generating global sections. We then show that when n = 2, i.e., in the quadratic étale case, that the singular cohomology of B(r; An)(R) can be used to reconstruct a famous example of S. Chase and to extend its application to showing that there is a smooth affine r-1-dimensional…
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We construct varieties B(r;An) such that a map X -> B(r;An) corresponds to a degree-n étale algebra on X equipped with r generating global sections. We then show that when n = 2, i.e., in the quadratic étale case, that the singular cohomology of B(r; An)(R) can be used to reconstruct a famous example of S. Chase and to extend its application to showing that there is a smooth affine r-1-dimensional R-variety on which there are étale algebras An of arbitrary degrees n that cannot be generated by fewer than r elements. This shows that in the étale algebra case, a bound established by U. First and Z. Reichstein is sharp.
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Submitted 28 July, 2020; v1 submitted 20 February, 2019;
originally announced February 2019.
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Essential dimension of inseparable field extensions
Authors:
Zinovy Reichstein,
Abhishek Kumar Shukla
Abstract:
Let k be a base field, K be a field containing k and L/K be a field extension of degree n. The essential dimension ed(L/K) over k is a numerical invariant measuring "the complexity" of L/K. Of particular interest is $τ$(n) = max { ed(L/K) | L/K is a separable extension of degree n}, also known as the essential dimension of the symmetric group $S_n$. The exact value of $τ$(n) is known only for n…
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Let k be a base field, K be a field containing k and L/K be a field extension of degree n. The essential dimension ed(L/K) over k is a numerical invariant measuring "the complexity" of L/K. Of particular interest is $τ$(n) = max { ed(L/K) | L/K is a separable extension of degree n}, also known as the essential dimension of the symmetric group $S_n$. The exact value of $τ$(n) is known only for n $\leq$ 7. In this paper we assume that k is a field of characteristic p > 0 and study the essential dimension of inseparable extensions L/K. Here the degree n = [L:K] is replaced by a pair (n, e) which accounts for the size of the separable and the purely inseparable parts of L/K respectively, and τ(n) is replaced by $τ$(n, e) = max { ed(L/K) | L/K is a field extension of type (n, e)}. The symmetric group $S_n$ is replaced by a certain group scheme $G_{n,e}$ over k. This group is neither finite nor smooth; nevertheless, computing its essential dimension turns out to be easier than computing the essential dimension of $S_n$. Our main result is a simple formula for τ(n, e).
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Submitted 21 June, 2018;
originally announced June 2018.
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Quasiperiodic ordering in thick Sn layer on $i$-Al-Pd-Mn: A possible quasicrystalline clathrate
Authors:
Vipin Kumar Singh,
Marek Mihalkovic,
Marian Krajčí,
Shuvam Sarkar,
Pampa Sadhukhan,
M. Maniraj,
Abhishek Rai,
Katariina Pussi,
Deborah L. Schlagel,
Thomas A. Lograsso,
Ajay Kumar Shukla,
Sudipta Roy Barman
Abstract:
Realization of an elemental solid-state quasicrystal has remained a distant dream so far in spite of extensive work in this direction for almost two decades. Here, we report the discovery of quasiperiodic ordering in a thick layer of elemental Sn grown on icosahedral ($i$)-Al-Pd-Mn. The STM images and the LEED patterns of the Sn layer show specific structural signatures that portray quasiperiodici…
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Realization of an elemental solid-state quasicrystal has remained a distant dream so far in spite of extensive work in this direction for almost two decades. Here, we report the discovery of quasiperiodic ordering in a thick layer of elemental Sn grown on icosahedral ($i$)-Al-Pd-Mn. The STM images and the LEED patterns of the Sn layer show specific structural signatures that portray quasiperiodicity but are distinct from the substrate. Photoemission spectroscopy reveals the existence of the pseudogap around the Fermi energy up to the maximal Sn thickness. The structure of the Sn layer is modeled as a novel form of quasicrystalline clathrate on the basis of the following: Firstly, from ab-initio theory, the energy of bulk Sn clathrate quasicrystal is lower than the high temperature metallic $β$-Sn phase, but higher than the low temperature $α$-Sn phase. A comparative study of the free slab energetics shows that surface energy favors clathrate over $α$-Sn up to about 4 nm layer thickness, and matches $β$-Sn for narrow window of slab thickness of 2-3 nm. Secondly, the bulk clathrate exhibits gap opening near Fermi energy, while the free slab form exhibits a pronouced pseudogap, which explains the pseudogap observed in photoemission. Thirdly, the STM images exhibit good agreement with clathrate model. We establish the adlayer-substrate compatibility based on very similar (within 1%) the cage-cage separation in the Sn clathrate and the pseudo-Mackay cluster-cluster separation on the $i$-Al-Pd-Mn surface. Furthermore, the nucleation centers of the Sn adlayer on the substrate are identified and these are shown to be a valid part of the Sn clathrate structure. Thus, based on both experiment and theory, we propose that 4 nm thick Sn adlayer deposited on 5-fold surface of $i$-Al-Pd-Mn substrate is in fact a metastable realization of elemental, clathrate family quasicrystal.
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Submitted 9 January, 2020; v1 submitted 22 April, 2017;
originally announced April 2017.
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Unipolar resistive switching in cobalt titanate thin films
Authors:
Atul Thakre,
A. K. Shukla,
R. S. Katiyar,
Ashok Kumar
Abstract:
We report giant resistive switching of an order of 104, long-time charge retention characteristics up to 104 s, non-overlap** SET and RESET voltages, ohmic in low resistance state (LRS) and space charge limited current (SCLC) mechanism in high resistance state (HRS) properties in polycrystalline perovskite Cobalt Titanate (CoTiO3 ~ CTO) thin films. Impedance spectroscopy study was carried out fo…
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We report giant resistive switching of an order of 104, long-time charge retention characteristics up to 104 s, non-overlap** SET and RESET voltages, ohmic in low resistance state (LRS) and space charge limited current (SCLC) mechanism in high resistance state (HRS) properties in polycrystalline perovskite Cobalt Titanate (CoTiO3 ~ CTO) thin films. Impedance spectroscopy study was carried out for both LRS and HRS states which illustrates that only bulk resistance changes after resistance switching, however, there is a small change (<10% which is in pF range) in the bulk capacitance value in both states. These results suggest that in LRS state current filaments break the capacitor in many small capacitors in a parallel configuration which in turn provides the same capacitance in both states even there was 90 degree changes in phase-angle and an order of change in the tangent loss.
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Submitted 10 March, 2017;
originally announced March 2017.
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Fractional Calculus Approach to Logistic Equation and its Application
Authors:
Jignesh P. Chauhan,
Ranjan K. Jana,
Pratik V. Shah,
Ajay K. Shukla
Abstract:
In this paper, we propose a solution of fractional logistic equation by using properties of Mittag-Leffler function.
In this paper, we propose a solution of fractional logistic equation by using properties of Mittag-Leffler function.
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Submitted 18 February, 2017;
originally announced February 2017.
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Griffiths phase and critical behavior in layered Sr$_2$IrO$_4$ ferromagnet
Authors:
A. Rathi,
Sonam Perween,
P. K. Rout,
R. P. Singh,
Anurag Gupta,
Sukhvir Singh,
B. Gahtori,
B. Sivaiah,
Ajay Dhar,
A. K. Shukla,
R. K. Rakshit,
R. P. Pant,
G. A. Basheed
Abstract:
We report the existence of Griffiths phase (GP) and its influence on critical phenomena in layered Sr$_2$IrO$_4$ ferromagnet (T$_C$ = 221.5 K). The power law behavior of inverse magentic susceptibility, 1/$χ$(T) with exponent $λ= 0.18(2)$ confirm the GP in the regime T$_C$ $<$ T $\leq$ T$_G$ = 279.0(5) K. Moreover, the detailed critical analysis via modified Arrott plot method exhibits unrealistic…
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We report the existence of Griffiths phase (GP) and its influence on critical phenomena in layered Sr$_2$IrO$_4$ ferromagnet (T$_C$ = 221.5 K). The power law behavior of inverse magentic susceptibility, 1/$χ$(T) with exponent $λ= 0.18(2)$ confirm the GP in the regime T$_C$ $<$ T $\leq$ T$_G$ = 279.0(5) K. Moreover, the detailed critical analysis via modified Arrott plot method exhibits unrealistic critical exponents $β$ = 0.77(1), $γ$ = 1.59(2) and $δ= 3.06(4)$, in corroboration with magneto-caloric study. The abnormal exponent values have been viewed in context of ferromagnetic-Griffiths phase transition. The GP has been further analyzed using Bray model, which yields a reliable value of $β$ = 0.19(2), belonging to the two-dimensional (2D) XYh$_4$ universality class with strong anisotropy present in Sr$_2$IrO$_4$. The present study proposes Bray model as a possible tool to investigate the critical behavior for Griffiths ferromagnets in place of conventional Arrott plot analysis. The possible origins of GP and its correlation with insulating nature of Sr$_2$IrO$_4$ have been discussed.
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Submitted 9 August, 2016;
originally announced August 2016.
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Ferroelectric Capped Magnetization in Multiferroic PZT/LSMO Tunnel Junctions
Authors:
Ashok Kumar,
D. Barrionuevo,
N Ortega,
A. K. Shukla,
Santiranjan Shannigrahi,
J. F. Scott,
Ram S. Katiyar
Abstract:
Self-poled ultra-thin ferroelectric PbZr0.52Ti0.48O3 (PZT) (5 and 7 nm) films have been grown by pulsed laser deposition technique on ferromagnetic La0.67Sr0.33MnO3 (LSMO) (30 nm) to check the effect of polar cap** on magnetization for ferroelectric tunnel junction (FTJ) devices. PZT/LSMO heterostructures with thick polar PZT (7 nm) cap** show nearly 100% enhancement in magnetization compared…
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Self-poled ultra-thin ferroelectric PbZr0.52Ti0.48O3 (PZT) (5 and 7 nm) films have been grown by pulsed laser deposition technique on ferromagnetic La0.67Sr0.33MnO3 (LSMO) (30 nm) to check the effect of polar cap** on magnetization for ferroelectric tunnel junction (FTJ) devices. PZT/LSMO heterostructures with thick polar PZT (7 nm) cap** show nearly 100% enhancement in magnetization compared with thin polar PZT (5 nm) films, probably due to excess hole transfer from the ferroelectric to the ferromagnetic layers. Core-level X-ray photoelectron spectroscopy studies revealed the presence of larger Mn 3s exchange splitting and higher Mn3+/Mn4+ ion ratio in the LMSO with 7 nm polar cap**.
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Submitted 27 March, 2015;
originally announced March 2015.
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Micro-Raman and field emission studies of silicon nanowires prepared by metal assisted chemical etching
Authors:
Vivek Kumar,
Shailendra K. Saxena,
Vishakha Kaushik,
Kapil Saxena,
Rajesh Kumar,
A. K. Shukla
Abstract:
Micro-Raman scattering and electron field emission characteristics of silicon nanowires (SiNWs) synthesized by metal assisted chemical etching (MACE) are investigated. Scanning electron microscopy images reveal the growth of well aligned vertical SiNWs. Raman shift and size relation from bond-polarizability model has been used to calculate exact confinement sizes in SiNWs. The Si optical phonon pe…
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Micro-Raman scattering and electron field emission characteristics of silicon nanowires (SiNWs) synthesized by metal assisted chemical etching (MACE) are investigated. Scanning electron microscopy images reveal the growth of well aligned vertical SiNWs. Raman shift and size relation from bond-polarizability model has been used to calculate exact confinement sizes in SiNWs. The Si optical phonon peak for SiNWs showed a downshift and an asymmetric broadening with decreasing diameter of the SiNWs due to quantum confinement of optical phonons. The field emission characteristics of these SiNWs are studied based by carrying out current-voltage measurements followed by a theoretical analysis using Fowler-Nordheim equation. The electron field emission increased with decreasing diameter of SiNWs. Field emission from these SiNWs exhibits significant enhancement in turn-on field and total emission current with decreasing nanowire size. The reported results in the current study indicate that MACE is a simple technique to prepare well-aligned SiNWs with potentials for applications in field emission devices.
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Submitted 28 May, 2014;
originally announced May 2014.
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Comparison of porous silicon prepared using metal-induced etching (MIE) and laser-induced etching (LIE)
Authors:
Shailendra K. Saxena,
Vivek Kumar,
Hari M. Rai,
Gayatri Sahu,
Ravi K. Late,
Kapil Saxena,
A. K. Shukla,
Pankaj R. Sagdeo,
Rajesh Kumar
Abstract:
Porous silicon (p-Si), prepared by two routes (metal induced etching (MIE) and laser induced etching (LIE)) have been studied by comparing the observed surface morphologies using SEM. A uniformly distributed smaller (submicron sized) pores are formed when MIE technique is used because the pore formation is driven by uniformly distributed metal (silver in present case) nanoparticles, deposited prio…
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Porous silicon (p-Si), prepared by two routes (metal induced etching (MIE) and laser induced etching (LIE)) have been studied by comparing the observed surface morphologies using SEM. A uniformly distributed smaller (submicron sized) pores are formed when MIE technique is used because the pore formation is driven by uniformly distributed metal (silver in present case) nanoparticles, deposited prior to the porosification step. Whereas in p-Si, prepared by LIE technique, wider pores with some variation in pore size as compared to MIE technique is observed because a laser having gaussian profile of intensity is used for porosification. Uniformly distribute well-aligned Si nanowires are observed in samples prepared by MIE method as seen using cross-sectional SEM imaging. A single photoluminescence (PL) peak at 1.96 eV corresponding to red emission at room temperature is observed which reveals that the Si nanowires, present in p-Si prepared by MIE, show quantum confinement effect. The single PL peak confirms the presence of uniform sized nanowires in MIE samples. These vertically aligned Si nanowires can be used for field emission application.
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Submitted 25 March, 2014;
originally announced March 2014.
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Spectroscopic investigation of quantum confinement effects in ion implanted silicon-on-sapphire films
Authors:
Rajesh Kumar,
H. S. Mavi,
A. K. Shukla
Abstract:
Crystalline Silicon-on-Sapphire (SOS) films were implanted with boron (B$^+$) and phosphorous (P$^+$) ions. Different samples, prepared by varying the ion dose in the range $10^{14}$ to 5 x $10^{15}$ and ion energy in the range 150-350 keV, were investigated by the Raman spectroscopy, photoluminescence (PL) spectroscopy and glancing angle x-ray diffraction (GAXRD). The Raman results from dose de…
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Crystalline Silicon-on-Sapphire (SOS) films were implanted with boron (B$^+$) and phosphorous (P$^+$) ions. Different samples, prepared by varying the ion dose in the range $10^{14}$ to 5 x $10^{15}$ and ion energy in the range 150-350 keV, were investigated by the Raman spectroscopy, photoluminescence (PL) spectroscopy and glancing angle x-ray diffraction (GAXRD). The Raman results from dose dependent B$^+$ implanted samples show red-shifted and asymmetrically broadened Raman line-shape for B$^+$ dose greater than $10^{14}$ ions cm$^{-2}$. The asymmetry and red shift in the Raman line-shape is explained in terms of quantum confinement of phonons in silicon nanostructures formed as a result of ion implantation. PL spectra shows size dependent visible luminescence at $\sim$ 1.9 eV at room temperature, which confirms the presence of silicon nanostructures. Raman studies on P$^+$ implanted samples were also done as a function of ion energy. The Raman results show an amorphous top SOS surface for sample implanted with 150 keV P$^+$ ions of dose 5 x $10^{15}$ ions cm$^{-2}$. The nanostructures are formed when the P$^+$ energy is increased to 350 keV by kee** the ion dose fixed. The GAXRD results show consistency with the Raman results.
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Submitted 22 December, 2009;
originally announced December 2009.
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Defect free visible photoluminescence from laser-generated germanium nanoparticles
Authors:
Manoj Kumar,
Rajesh Kumar,
Vivek Kumar,
A. K. Shukla
Abstract:
Origin of room temperature visible photoluminescence (PL) from defect free germanium (Ge) nanoparticles have been discussed here. The Ge nanoparticles produced by laser-induced etching technique show broad visible PL around 2.0 - 2.2 eV at room temperature. Size dependent PL peak shift in Ge nanoparticles has been explained in terms of quantum confinement. Theoretical calculations of radiative l…
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Origin of room temperature visible photoluminescence (PL) from defect free germanium (Ge) nanoparticles have been discussed here. The Ge nanoparticles produced by laser-induced etching technique show broad visible PL around 2.0 - 2.2 eV at room temperature. Size dependent PL peak shift in Ge nanoparticles has been explained in terms of quantum confinement. Theoretical calculations of radiative lifetime using oscillator strength, which is closely related to the size of the nanostructures, suggests that the PL is originating from a radiative recombination process in quantum confined Ge nanostructures.
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Submitted 15 December, 2009;
originally announced December 2009.
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Thermal effects on electron-phonon interaction in silicon nanostructures
Authors:
Rajesh Kumar,
Vivek Kumar,
A. K. Shukla
Abstract:
Raman spectra from silicon nanostructures, recorded using excitation laser power density of 1.0 kW/cm^2, is employed here to reveal the dominance of thermal effects at temperatures higher than the room temperature. Room temperature Raman spectrum shows only phonon confinement and Fano effects. Raman spectra recorded at higher temperatures show increase in FWHM and decrease in asymmetry ratio wit…
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Raman spectra from silicon nanostructures, recorded using excitation laser power density of 1.0 kW/cm^2, is employed here to reveal the dominance of thermal effects at temperatures higher than the room temperature. Room temperature Raman spectrum shows only phonon confinement and Fano effects. Raman spectra recorded at higher temperatures show increase in FWHM and decrease in asymmetry ratio with respect to its room temperature counterpart. Experimental Raman scattering data are analyzed successfully using theoretical Raman line-shape generated by incorporating the temperature dependence of phonon dispersion relation. Experimental and theoretical temperature dependent Raman spectra are in good agreement. Although quantum confinement and Fano effects persists, heating effects start dominating at higher temperatures than room tempaerature.
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Submitted 15 December, 2009;
originally announced December 2009.
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Quasiperiodic free electron metal layers
Authors:
A. K. Shukla,
R. S. Dhaka,
S. W. Dsouza,
Sanjay Singh,
D. Wu,
T. A. Lograsso,
M. Krajci,
J. Hafner,
K. Horn,
S. R. Barman
Abstract:
Using electron diffraction, we show that free electron metals such as sodium and potassium form a highly regular quasiperiodic monolayer on the fivefold surface of icosahedral Al-Pd-Mn and that the quasiperiodicity propagates up to the second layer in sodium. Our photoelectron spectroscopy results show that the quasicrystalline alkali metal adlayer does not exhibit a pseudogap near the Fermi lev…
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Using electron diffraction, we show that free electron metals such as sodium and potassium form a highly regular quasiperiodic monolayer on the fivefold surface of icosahedral Al-Pd-Mn and that the quasiperiodicity propagates up to the second layer in sodium. Our photoelectron spectroscopy results show that the quasicrystalline alkali metal adlayer does not exhibit a pseudogap near the Fermi level, thought to be charactersitic for the electronic structure of quasicrystalline materials. Calculations based on density functional theory provide a model structure for the quasicrystalline alkali metal monolayer and confirm the absence of a pseudogap.
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Submitted 1 April, 2009;
originally announced April 2009.
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Investigation of unoccupied electronic states of LaCoO$_3$ and PrCoO$_3$ using inverse photoemission spectroscopy and GGA + $U$ calculations
Authors:
S. K. Pandey,
Ashwani Kumar,
S. Banik,
A. K. Shukla,
S. R. Barman,
A. V. Pimpale
Abstract:
The unoccupied electronic states of LaCoO$_3$ and PrCoO$_3$ are studied using room temperature inverse photoemission spectroscopy and \emph{ab initio} GGA+$\emph{U}$ band structure calculations. A fairly good agreement between experiment and theory is obtained. The intensity of the peak just above the Fermi-level is found to be very much sensitive to the hybridization of Co 3$d$ and O 2$p$ orbit…
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The unoccupied electronic states of LaCoO$_3$ and PrCoO$_3$ are studied using room temperature inverse photoemission spectroscopy and \emph{ab initio} GGA+$\emph{U}$ band structure calculations. A fairly good agreement between experiment and theory is obtained. The intensity of the peak just above the Fermi-level is found to be very much sensitive to the hybridization of Co 3$d$ and O 2$p$ orbitals. Moreover, the band just above the Fermi-level is of Co 3$d$ character with little contribution from O 2$p$ states.
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Submitted 20 November, 2007;
originally announced November 2007.
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Martensitic transition, ferrimagnetism and Fermi surface nesting in Mn_2NiGa
Authors:
S. R. Barman,
S. Banik,
A. K. Shukla,
C. Kamal,
Aparna Chakrabarti
Abstract:
The electronic structure of Mn_2NiGa has been studied using density functional theory and photoemission spectroscopy. The lower temperature tetragonal martensitic phase with c/a= 1.25 is more stable compared to the higher temperature austenitic phase. Mn_2NiGa is ferrimagnetic in both phases. The calculated valence band spectrum, the optimized lattice constants and the magnetic moments are in go…
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The electronic structure of Mn_2NiGa has been studied using density functional theory and photoemission spectroscopy. The lower temperature tetragonal martensitic phase with c/a= 1.25 is more stable compared to the higher temperature austenitic phase. Mn_2NiGa is ferrimagnetic in both phases. The calculated valence band spectrum, the optimized lattice constants and the magnetic moments are in good agreement with experiment. The majority-spin Fermi surface (FS) expands in the martensitic phase, while the minority-spin FS shrinks. FS nesting indicates occurrence of phonon softening and modulation in the martensitic phase.
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Submitted 15 October, 2007; v1 submitted 14 July, 2007;
originally announced July 2007.
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Optimal operating conditions and characteristics of acetone/CaF_2 detector for inverse photoemission spectroscopy
Authors:
S. Banik,
A. K. Shukla,
S. R. Barman
Abstract:
Performance and characteristics of a band-pass photon detector using acetone gas and CaF_2 window (acetone/CaF_2) have been studied and compared with an ethanol/MgF_2 detector. The optimal operating conditions are found to be 4 mbar acetone pressure and 745+/-20 V anode voltage. The count rate obtained by us is about a factor of 3 higher than what has been reported earlier for the acetone detect…
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Performance and characteristics of a band-pass photon detector using acetone gas and CaF_2 window (acetone/CaF_2) have been studied and compared with an ethanol/MgF_2 detector. The optimal operating conditions are found to be 4 mbar acetone pressure and 745+/-20 V anode voltage. The count rate obtained by us is about a factor of 3 higher than what has been reported earlier for the acetone detector. Unlike other gas filled detectors, this detector works in the proportional region with very small dead time (4 micro sec). A detector band-pass of 0.48+/-0.01 eV FWHM is obtained.
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Submitted 29 June, 2005; v1 submitted 16 April, 2005;
originally announced April 2005.
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Influence of Ni do** on the electronic structure of Ni_2MnGa
Authors:
Aparna Chakrabarti,
C. Biswas,
S. Banik,
R. S. Dhaka,
A. K. Shukla,
S. R. Barman
Abstract:
The modifications in the electronic structure of Ni_{2+x}Mn_{1-x}Ga by Ni do** have been studied using full potential linearized augmented plane wave method and ultra-violet photoemission spectroscopy. Ni 3d related electron states appear due to formation of Ni clusters. We show the possibility of changing the minority-spin DOS with Ni do**, while the majority-spin DOS remains almost unchang…
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The modifications in the electronic structure of Ni_{2+x}Mn_{1-x}Ga by Ni do** have been studied using full potential linearized augmented plane wave method and ultra-violet photoemission spectroscopy. Ni 3d related electron states appear due to formation of Ni clusters. We show the possibility of changing the minority-spin DOS with Ni do**, while the majority-spin DOS remains almost unchanged. The total magnetic moment decreases with excess Ni. The total energy calculations corroborate the experimentally reported changes in the Curie temperature and the martensitic transition temperature with x.
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Submitted 29 June, 2005; v1 submitted 22 December, 2004;
originally announced December 2004.
