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Triply-Resonant Sum Frequency Conversion with Gallium Phosphide Ring Resonators
Authors:
Alan D. Logan,
Shivangi Shree,
Srivatsa Chakravarthi,
Nicholas Yama,
Christian Pederson,
Karine Hestroffer,
Fariba Hatami,
Kai-Mei C. Fu
Abstract:
We demonstrate quasi-phase matched, triply-resonant sum frequency conversion in 10.6-um-diameter integrated gallium phosphide ring resonators. A small-signal, waveguide-to-waveguide power conversion efficiency of 8%/mW is measured for conversion from telecom (1536 nm) and near infrared (1117 nm) to visible (647 nm) wavelengths with an absolute power conversion efficiency of 6.3% measured at satura…
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We demonstrate quasi-phase matched, triply-resonant sum frequency conversion in 10.6-um-diameter integrated gallium phosphide ring resonators. A small-signal, waveguide-to-waveguide power conversion efficiency of 8%/mW is measured for conversion from telecom (1536 nm) and near infrared (1117 nm) to visible (647 nm) wavelengths with an absolute power conversion efficiency of 6.3% measured at saturation pump power. For the complementary difference frequency generation process, a single photon conversion efficiency of 7.2%/mW from visible to telecom is projected for resonators with optimized coupling. Efficient conversion from visible to telecom will facilitate long-distance transmission of spin-entangled photons from solid-state emitters such as the diamond NV center, allowing long-distance entanglement for quantum networks.
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Submitted 16 August, 2022; v1 submitted 13 August, 2022;
originally announced August 2022.
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Exciton spectroscopy and diffusion in MoSe2-WSe2 lateral heterostructures encapsulated in hexagonal boron nitride
Authors:
Dorian Beret,
Ioannis Paradisanos,
Ziyang Gan,
Emad Naja dehaghani,
Antony George,
Tibor Lehnert,
Johannes Biskupek,
Shivangi Shree,
Ana Estrada-Real,
Delphine Lagarde,
Jean-Marie Poumirol,
Vincent Paillard,
Kenji Watanabe,
Takashi Taniguchi,
Xavier Marie,
Ute Kaiser,
Pierre Renucci,
Laurent Lombez,
Andrey Turchanin,
Bernhard Urbaszek
Abstract:
Chemical vapor deposition (CVD) allows lateral edge epitaxy of transition metal dichalcogenide heterostructures with potential applications in optoelectronics. Critical for carrier and exciton transport is the quality of the two materials that constitute the monolayer and the nature of the lateral heterojunction. Important details of the optical properties were inaccessible in as-grown heterostruc…
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Chemical vapor deposition (CVD) allows lateral edge epitaxy of transition metal dichalcogenide heterostructures with potential applications in optoelectronics. Critical for carrier and exciton transport is the quality of the two materials that constitute the monolayer and the nature of the lateral heterojunction. Important details of the optical properties were inaccessible in as-grown heterostructure samples due to large inhomogeneous broadening of the optical transitions. Here we perform optical spectroscopy at T = 4 K and also at 300 K to access the optical transitions in CVD grown MoSe2-WSe2 lateral heterostructures that are transferred from the growth-substrate and are encapsulated in hBN. Photoluminescence (PL), reflectance contrast and Raman spectroscopy reveal considerably narrowed optical transition linewidth similar to high quality exfoliated monolayers. In high-resolution transmission electron microscopy (HRTEM) we find near-atomically sharp junctions with a typical extent of 3nm for the covalently bonded MoSe2-WSe2. In PL imaging experiments we find effective excitonic diffusion length that are longer for WSe2 than for MoSe2 at low T=4 K, whereas at 300 K this trend is reversed.
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Submitted 15 April, 2022;
originally announced April 2022.
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Target-wavelength-trimmed second harmonic generation with gallium phosphide-on-nitride ring resonators
Authors:
Lillian Thiel,
Alan D. Logan,
Srivatsa Chakravarthi,
Shivangi Shree,
Karine Hestroffer,
Fariba Hatami,
Kai-Mei C. Fu
Abstract:
We demonstrate post-fabrication target-wavelength trimming with a gallium phosphide on silicon nitride integrated photonic platform using controlled electron-beam exposure of hydrogen silsesquioxane cladding. A linear relationship between the electron-beam exposure dose and resonant wavelength red-shift enables deterministic, individual trimming of multiple devices on the same chip to within 30 pm…
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We demonstrate post-fabrication target-wavelength trimming with a gallium phosphide on silicon nitride integrated photonic platform using controlled electron-beam exposure of hydrogen silsesquioxane cladding. A linear relationship between the electron-beam exposure dose and resonant wavelength red-shift enables deterministic, individual trimming of multiple devices on the same chip to within 30 pm of a single target wavelength. Second harmonic generation from telecom to near infrared at a target wavelength is shown in multiple devices with quality factors on the order of $10^4$. Post-fabrication tuning is an essential tool for targeted wavelength applications including quantum frequency conversion
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Submitted 8 October, 2021; v1 submitted 7 October, 2021;
originally announced October 2021.
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Capacitively-coupled and inductively-coupled excitons in bilayer MoS$_2$
Authors:
Lukas Sponfeldner,
Nadine Leisgang,
Shivangi Shree,
Ioannis Paradisanos,
Kenji Watanabe,
Takashi Taniguchi,
Cedric Robert,
Delphine Lagarde,
Andrea Balocchi,
Xavier Marie,
Iann C. Gerber,
Bernhard Urbaszek,
Richard J. Warburton
Abstract:
The interaction of intralayer and interlayer excitons is studied in a two-dimensional semiconductor, homobilayer MoS$_2$. It is shown that the measured optical susceptibility reveals both the magnitude and the sign of the coupling constants. The interlayer exciton interacts capacitively with the intralayer B-exciton (positive coupling constant) consistent with hole tunnelling from one monolayer to…
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The interaction of intralayer and interlayer excitons is studied in a two-dimensional semiconductor, homobilayer MoS$_2$. It is shown that the measured optical susceptibility reveals both the magnitude and the sign of the coupling constants. The interlayer exciton interacts capacitively with the intralayer B-exciton (positive coupling constant) consistent with hole tunnelling from one monolayer to the other. Conversely, the interlayer exciton interacts inductively with the intralayer A-exciton (negative coupling constant). First-principles many-body calculations show that this coupling arises via an intravalley exchange-interaction of A- and B-excitons.
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Submitted 9 August, 2021;
originally announced August 2021.
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Room Temperature Micro-Photoluminescence Studies of Colloidal WS2 Nanosheets
Authors:
André Philipp Frauendorf,
André Niebur,
Lena Harms,
Shivangi Shree,
Bernhard Urbaszek,
Michael Oestreich,
Jens Hübner,
Jannika Lauth
Abstract:
Wet-chemical syntheses for quasi two-dimensional (2D) transition metal dichalcogenides (TMDs) have emerged as promising methods for straightforward solution-processing of these materials. However, photoluminescence properties of colloidal TMDs are virtually unexplored due to the typically non-emitting synthesis products. In this work, we demonstrate room temperature micro-photoluminescence of deli…
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Wet-chemical syntheses for quasi two-dimensional (2D) transition metal dichalcogenides (TMDs) have emerged as promising methods for straightforward solution-processing of these materials. However, photoluminescence properties of colloidal TMDs are virtually unexplored due to the typically non-emitting synthesis products. In this work, we demonstrate room temperature micro-photoluminescence of delicate ultrathin colloidal WS2 nanosheets synthesized from WCl6 and elemental sulfur in oleic acid and oleylamine at 320 °C for the first time. Both, mono- and multilayer photoluminescence are observed, revealing comparable characteristics to exfoliated TMD monolayers and underpinning the high quality of colloidal WS2 nanosheets. In addition, a promising long-term air-stability of colloidal WS2 nanosheets is found and the control of photodegradation of the structures under laser excitation is identified as a challenge for further advancing nanosheet monolayers. Our results render colloidal TMDs as easily synthesized and highly promising 2D semiconductors with optical properties fully competitive with conventionally fabricated ultrathin TMDs.
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Submitted 16 July, 2021; v1 submitted 20 May, 2021;
originally announced May 2021.
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Interlayer exciton mediated second harmonic generation in bilayer MoS2
Authors:
Shivangi Shree,
Delphine Lagarde,
Laurent Lombez,
Cedric Robert,
Andrea Balocchi,
Kenji Watanabe,
Takashi Taniguchi,
Xavier Marie,
Iann C. Gerber,
Mikhail M. Glazov,
Leonid E. Golub,
Bernhard Urbaszek,
Ioannis Paradisanos
Abstract:
Second harmonic generation (SHG) is a non-linear optical process, where two photons coherently combine into one photon of twice their energy. Efficient SHG occurs for crystals with broken inversion symmetry, such as transition metal dichalcogenide monolayers. Here we show tuning of non-linear optical processes in an inversion symmetric crystal. This tunability is based on the unique properties of…
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Second harmonic generation (SHG) is a non-linear optical process, where two photons coherently combine into one photon of twice their energy. Efficient SHG occurs for crystals with broken inversion symmetry, such as transition metal dichalcogenide monolayers. Here we show tuning of non-linear optical processes in an inversion symmetric crystal. This tunability is based on the unique properties of bilayer MoS2, that shows strong optical oscillator strength for the intra- but also inter-layer exciton resonances. As we tune the SHG signal onto these resonances by varying the laser energy, the SHG amplitude is enhanced by several orders of magnitude. In the resonant case the bilayer SHG signal reaches amplitudes comparable to the off-resonant signal from a monolayer. In applied electric fields the interlayer exciton energies can be tuned due to their in-built electric dipole via the Stark effect. As a result the interlayer exciton degeneracy is lifted and the bilayer SHG response is further enhanced by an additional two orders of magnitude, well reproduced by our model calculations.
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Submitted 2 April, 2021;
originally announced April 2021.
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Unveiling the optical emission channels of monolayer semiconductors coupled to silicon nanoantennas
Authors:
Jean-Marie Poumirol,
Ioannis Paradisanos,
Shivangi Shree,
Gonzague Agez,
Xavier Marie,
Cedric Robert,
Nicolas Mallet,
Peter R. Wiecha,
Guilhem Larrieu,
Vincent Larrey,
Frank Fournel,
Kenji Watanabe,
Takashi Taniguchi,
Aurelien Cuche,
Vincent Paillard,
Bernhard Urbaszek
Abstract:
Monolayers (MLs) of transition metal dichalcogenides (TMDs) such as WSe2 and MoSe2 can be placed by dry stam** directly on broadband dielectric resonators, which have the ability to enhance the spontaneous emission rate and brightness of solid-state emitters at room temperature. We show strongly enhanced emission and directivity modifications in room temperature photoluminescence map** experim…
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Monolayers (MLs) of transition metal dichalcogenides (TMDs) such as WSe2 and MoSe2 can be placed by dry stam** directly on broadband dielectric resonators, which have the ability to enhance the spontaneous emission rate and brightness of solid-state emitters at room temperature. We show strongly enhanced emission and directivity modifications in room temperature photoluminescence map** experiments. By varying TMD material (WSe2 versus MoSe2) transferred on silicon nanoresonators with various designs (planarized versus non-planarized), we experimentally separate the different physical mechanisms that govern the global light emission enhancement. For WSe2 and MoSe2 we address the effects of Mie Resonances and strain in the monolayer. For WSe2 an important additional contribution comes from out-of-plane exciton dipoles. This paves the way for more targeted designs of TMD-Si nanoresonator structures for room temperature applications.
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Submitted 24 July, 2020;
originally announced July 2020.
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Guide to optical spectroscopy of layered semiconductors
Authors:
Shivangi Shree,
Ioannis Paradisanos,
Xavier Marie,
Cedric Robert,
Bernhard Urbaszek
Abstract:
In this technical review we give an introduction to optical spectroscopy for layered materials as a powerful, non-invasive tool to access details of the electronic band structure and crystal quality. Potential applications in photonics and optoelectronics are based on our understanding of the light-matter interaction on an atomic monolayer scale. Here atomically thin transition metal dichalcogenid…
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In this technical review we give an introduction to optical spectroscopy for layered materials as a powerful, non-invasive tool to access details of the electronic band structure and crystal quality. Potential applications in photonics and optoelectronics are based on our understanding of the light-matter interaction on an atomic monolayer scale. Here atomically thin transition metal dichalcogenides, such as MoS2 and WSe2, are model systems for layered semiconductors with a bandgap in the visible region of the optical spectrum. They can be assembled to form heterostructures and combine the unique properties of the constituent monolayers. We review the working principles of micro-photoluminescence spectroscopy and optical absorption experiments. We discuss the physical origin of the main absorption and emission features in the optical spectra and how they can be tuned. We explain key-aspects of practical set-ups for performing experiments in different conditions such as variable temperatures or in applied magnetic fields and how parameters such as detection spot size and excitation laser wavelength impact the optical spectra. We describe the important influence of the direct sample environment, such as substrates and encapsulation layers, on the emission and absorption mechanisms. A survey of optical techniques that probe the coupling between layers and analyse carrier polarisation dynamics for spin- and valleytronics is provided.
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Submitted 30 June, 2020;
originally announced June 2020.
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Giant Stark splitting of an exciton in bilayer MoS$_2$
Authors:
Nadine Leisgang,
Shivangi Shree,
Ioannis Paradisanos,
Lukas Sponfeldner,
Cedric Robert,
Delphine Lagarde,
Andrea Balocchi,
Kenji Watanabe,
Takashi Taniguchi,
Xavier Marie,
Richard J. Warburton,
Iann C. Gerber,
Bernhard Urbaszek
Abstract:
Transition metal dichalcogenides (TMDs) constitute a versatile platform for atomically thin optoelectronics devices and spin-valley memory applications. In monolayers optical absorption is strong, but the transition energy is not tunable as the neutral exciton has essentially no out-of-plane electric dipole. In contrast, interlayer exciton transitions in heterobilayers are widely tunable in applie…
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Transition metal dichalcogenides (TMDs) constitute a versatile platform for atomically thin optoelectronics devices and spin-valley memory applications. In monolayers optical absorption is strong, but the transition energy is not tunable as the neutral exciton has essentially no out-of-plane electric dipole. In contrast, interlayer exciton transitions in heterobilayers are widely tunable in applied electric fields, but their coupling to light is considerably reduced. Here, we show tuning over 120 meV of interlayer excitons with high oscillator strength in bilayer MoS2. These shifts are due to the quantum confined Stark effect, here the electron is localised to one of the layers yet the hole is delocalised across the bilayer. We optically probe the interaction between intra- and interlayer excitons as they are energetically tuned into resonance. This allows studying their mixing supported by beyond standard density functional theory calculations including excitonic effects. In MoS2 trilayers our experiments uncover two types of interlayer excitons with and without in-built electric dipoles, respectively. Highly tunable excitonic transitions with large oscillator strength and in-built dipoles, that lead to considerable exciton-exciton interactions, hold great promise for non-linear optics with polaritons.
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Submitted 18 June, 2021; v1 submitted 6 February, 2020;
originally announced February 2020.
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Controlling interlayer excitons in MoS2 layers grown by chemical vapor deposition
Authors:
Ioannis Paradisanos,
Shivangi Shree,
Antony George,
Nadine Leisgang,
Cedric Robert,
Kenji Watanabe,
Takashi Taniguchi,
Richard J. Warburton,
Andrey Turchanin,
Xavier Marie,
Iann C. Gerber,
Bernhard Urbaszek
Abstract:
Combining MoS$_2$ monolayers to form multilayers allows to access new functionalities. In this work, we examine the correlation between the stacking order and the interlayer coupling of valence states in MoS$_2$ homobilayer samples grown by chemical vapor deposition (CVD) and artificially stacked bilayers from CVD monolayers. We show that hole delocalization over the bilayer is allowed in 2H stack…
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Combining MoS$_2$ monolayers to form multilayers allows to access new functionalities. In this work, we examine the correlation between the stacking order and the interlayer coupling of valence states in MoS$_2$ homobilayer samples grown by chemical vapor deposition (CVD) and artificially stacked bilayers from CVD monolayers. We show that hole delocalization over the bilayer is allowed in 2H stacking and results in strong interlayer exciton absorption and also in a larger A-B exciton separation as compared to 3R bilayers, where both holes and electrons are confined to the individual layers. Comparing 2H and 3R reflectivity spectra allows to extract an interlayer coupling energy of about $t_\perp=49$ meV. Obtaining very similar results for as-grown and artificially stacked bilayers is promising for assembling large area van der Waals structures with CVD material, using interlayer exciton absorption and A-B exciton separation as indicators for interlayer coupling. Beyond DFT calculations including excitonic effects confirm signatures of efficient interlayer coupling for 2H stacking in agreement with our experiments.
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Submitted 24 January, 2020;
originally announced January 2020.
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Accessing high optical quality of MoS2 monolayers grown by chemical vapor deposition
Authors:
Shivangi Shree,
Antony George,
Tibor Lehnert,
Christof Neumann,
Meryem Benelajla,
Cedric Robert,
Xavier Marie,
Kenji Watanabe,
Takashi Taniguchi,
Ute Kaiser,
Bernhard Urbaszek,
Andrey Turchanin
Abstract:
Chemical vapor deposition (CVD) allows growing transition metal dichalcogenides (TMDs) over large surface areas on inexpensive substrates. In this work, we correlate the structural quality of CVD grown MoS$_2$ monolayers (MLs) on SiO$_2$/Si wafers studied by high-resolution transmission electron microscopy (HRTEM) with high optical quality revealed in optical emission and absorption from cryogenic…
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Chemical vapor deposition (CVD) allows growing transition metal dichalcogenides (TMDs) over large surface areas on inexpensive substrates. In this work, we correlate the structural quality of CVD grown MoS$_2$ monolayers (MLs) on SiO$_2$/Si wafers studied by high-resolution transmission electron microscopy (HRTEM) with high optical quality revealed in optical emission and absorption from cryogenic to ambient temperatures. We determine a defect concentration of the order of 10$^{13}$ cm$^{-2}$ for our samples with HRTEM. To have access to the intrinsic optical quality of the MLs, we remove the MLs from the SiO$_2$ growth substrate and encapsulate them in hBN flakes with low defect density, to reduce the detrimental impact of dielectric disorder. We show optical transition linewidth of 5 meV at low temperature (T=4 K) for the free excitons in emission and absorption. This is comparable to the best ML samples obtained by mechanical exfoliation of bulk material. The CVD grown MoS$_2$ ML photoluminescence is dominated by free excitons and not defects even at low temperature. High optical quality of the samples is further confirmed by the observation of excited exciton states of the Rydberg series. We optically generate valley coherence and valley polarization in our CVD grown MoS$_2$ layers, showing the possibility for studying spin and valley physics in CVD samples of large surface area.
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Submitted 7 July, 2019;
originally announced July 2019.
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Revealing exciton masses and dielectric properties of monolayer semiconductors with high magnetic fields
Authors:
M. Goryca,
J. Li,
A. V. Stier,
T. Taniguchi,
K. Watanabe,
E. Courtade,
S. Shree,
C. Robert,
B. Urbaszek,
X. Marie,
S. A. Crooker
Abstract:
In semiconductor physics, many essential optoelectronic material parameters can be experimentally revealed via optical spectroscopy in sufficiently large magnetic fields. For monolayer transition-metal dichalcogenide semiconductors, this field scale is substantial --tens of teslas or more-- due to heavy carrier masses and huge exciton binding energies. Here we report absorption spectroscopy of mon…
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In semiconductor physics, many essential optoelectronic material parameters can be experimentally revealed via optical spectroscopy in sufficiently large magnetic fields. For monolayer transition-metal dichalcogenide semiconductors, this field scale is substantial --tens of teslas or more-- due to heavy carrier masses and huge exciton binding energies. Here we report absorption spectroscopy of monolayer MoS$_2$, MoSe$_2$, MoTe$_2$, and WS$_2$ in very high magnetic fields to 91~T. We follow the diamagnetic shifts and valley Zeeman splittings of not only the exciton's $1s$ ground state but also its excited $2s$, $3s$, ..., $ns$ Rydberg states. This provides a direct experimental measure of the effective (reduced) exciton masses and dielectric properties. Exciton binding energies, exciton radii, and free-particle bandgaps are also determined. The measured exciton masses are heavier than theoretically predicted, especially for Mo-based monolayers. These results provide essential and quantitative parameters for the rational design of opto-electronic van der Waals heterostructures incorporating 2D semiconductors.
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Submitted 28 August, 2019; v1 submitted 5 April, 2019;
originally announced April 2019.
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Interlayer excitons in bilayer MoS2 with strong oscillator strength up to room temperature
Authors:
Iann C. Gerber,
Emmanuel Courtade,
Shivangi Shree,
Cedric Robert,
Takashi Taniguchi,
Kenji Watanabe,
Andrea Balocchi,
Pierre Renucci,
Delphine Lagarde,
Xavier Marie,
Bernhard Urbaszek
Abstract:
Coulomb bound electron-hole pairs, excitons, govern the optical properties of semi-conducting transition metal dichalcogenides like MoS$_2$ and WSe$_2$. We study optical transitions at the K-point for 2H homobilayer MoS$_2$ in Density Functional Theory (DFT) including excitonic effects and compare with reflectivity measurements in high quality samples encapsulated in hexagonal BN. In both calculat…
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Coulomb bound electron-hole pairs, excitons, govern the optical properties of semi-conducting transition metal dichalcogenides like MoS$_2$ and WSe$_2$. We study optical transitions at the K-point for 2H homobilayer MoS$_2$ in Density Functional Theory (DFT) including excitonic effects and compare with reflectivity measurements in high quality samples encapsulated in hexagonal BN. In both calculated and measured spectra we find a strong interlayer exciton transition in energy between A and B intralayer excitons, observable for T$=4 -300$ K, whereas no such transition is observed for the monolayer in the same structure in this energy range. The interlayer excitons consist of an electron localized in one layer and a hole state delocalized over the bilayer, which results in the unusual combination of high oscillator strength and a static dipole moment. We also find signatures of interlayer excitons involving the second highest valence band (B) and compare absorption calculations for different bilayer stackings. For homotrilayer MoS$_2$ we also observe interlayer excitons and an energy splitting between different intralayer A-excitons originating from the middle and outer layers, respectively.
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Submitted 6 February, 2019; v1 submitted 15 November, 2018;
originally announced November 2018.
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Exciton states in monolayer MoSe2 and MoTe2 probed by upconversion spectroscopy
Authors:
B. Han,
C. Robert,
E. Courtade,
M. Manca,
S. Shree,
T. Amand,
P. Renucci,
T. Taniguchi,
K. Watanabe,
X. Marie,
L. E. Golub,
M. M. Glazov,
B. Urbaszek
Abstract:
Transitions metal dichalcogenides (TMDs) are direct semiconductors in the atomic monolayer (ML) limit with fascinating optical and spin-valley properties. The strong optical absorption of up to 20 % for a single ML is governed by excitons, electron-hole pairs bound by Coulomb attraction. Excited exciton states in MoSe$_2$ and MoTe$_2$ monolayers have so far been elusive due to their low oscillator…
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Transitions metal dichalcogenides (TMDs) are direct semiconductors in the atomic monolayer (ML) limit with fascinating optical and spin-valley properties. The strong optical absorption of up to 20 % for a single ML is governed by excitons, electron-hole pairs bound by Coulomb attraction. Excited exciton states in MoSe$_2$ and MoTe$_2$ monolayers have so far been elusive due to their low oscillator strength and strong inhomogeneous broadening. Here we show that encapsulation in hexagonal boron nitride results in emission line width of the A:1$s$ exciton below 1.5 meV and 3 meV in our MoSe$_2$ and MoTe$_2$ monolayer samples, respectively. This allows us to investigate the excited exciton states by photoluminescence upconversion spectroscopy for both monolayer materials. The excitation laser is tuned into resonance with the A:1$s$ transition and we observe emission of excited exciton states up to 200 meV above the laser energy. We demonstrate bias control of the efficiency of this non-linear optical process. At the origin of upconversion our model calculations suggest an exciton-exciton (Auger) scattering mechanism specific to TMD MLs involving an excited conduction band thus generating high energy excitons with small wave-vectors. The optical transitions are further investigated by white light reflectivity, photoluminescence excitation and resonant Raman scattering confirming their origin as excited excitonic states in monolayer thin semiconductors.
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Submitted 11 May, 2018;
originally announced May 2018.
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Exciton-phonon coupling in MoSe2 monolayers
Authors:
S. Shree,
M. Semina,
C. Robert,
B. Han,
T. Amand,
A. Balocchi,
M. Manca,
E. Courtade,
X. Marie,
T. Taniguchi,
K. Watanabe,
M. M. Glazov,
B. Urbaszek
Abstract:
We study experimentally and theoretically the exciton-phonon interaction in MoSe2 monolayers encapsulated in hexagonal BN, which has an important impact on both optical absorption and emission processes. The exciton transition linewidth down to 1 meV at low temperatures makes it possible to observe high energy tails in absorption and emission extending over several meV, not masked by inhomogeneous…
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We study experimentally and theoretically the exciton-phonon interaction in MoSe2 monolayers encapsulated in hexagonal BN, which has an important impact on both optical absorption and emission processes. The exciton transition linewidth down to 1 meV at low temperatures makes it possible to observe high energy tails in absorption and emission extending over several meV, not masked by inhomogeneous broadening. We develop an analytical theory of the exciton-phonon interaction accounting for the deformation potential induced by the longitudinal acoustic phonons, which plays an important role in exciton formation. The theory allows fitting absorption and emission spectra and permits estimating the deformation potential in MoSe2 monolayers. We underline the reasons why exciton-phonon coupling is much stronger in two-dimensional transition metal dichalcodenides as compared to conventional quantum well structures. The importance of exciton-phonon interactions is further highlighted by the observation of a multitude of Raman features in the photoluminescence excitation experiments.
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Submitted 17 April, 2018;
originally announced April 2018.
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Electrically tunable dynamic nuclear spin polarization in GaAs quantum dots at zero magnetic field
Authors:
M. Manca,
G. Wang,
T. Kuroda,
S. Shree,
A. Balocchi,
P. Renucci,
X. Marie,
M. V. Durnev,
M. M. Glazov,
K. Sakoda,
T. Mano,
T. Amand,
B. Urbaszek
Abstract:
In III-V semiconductor nano-structures the electron and nuclear spin dynamics are strongly coupled. Both spin systems can be controlled optically. The nuclear spin dynamics is widely studied, but little is known about the initialization mechanisms. Here we investigate optical pum** of carrier and nuclear spins in charge tunable GaAs dots grown on 111A substrates. We demonstrate dynamic nuclear p…
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In III-V semiconductor nano-structures the electron and nuclear spin dynamics are strongly coupled. Both spin systems can be controlled optically. The nuclear spin dynamics is widely studied, but little is known about the initialization mechanisms. Here we investigate optical pum** of carrier and nuclear spins in charge tunable GaAs dots grown on 111A substrates. We demonstrate dynamic nuclear polarization (DNP) at zero magnetic field in a single quantum dot for the positively charged exciton X$^+$ state transition. We tune the DNP in both amplitude and sign by variation of an applied bias voltage V$_g$. Variation of $Δ$V$_g$ of the order of 100 mV changes the Overhauser splitting (nuclear spin polarization) from -30 $μ$eV (-22 %) to +10 $μ$eV (+7 %), although the X$^+$ photoluminescence polarization does not change sign over this voltage range. This indicates that absorption in the structure and energy relaxation towards the X$^+$ ground state might provide favourable scenarios for efficient electron-nuclear spin flip-flops, generating DNP during the first tens of ps of the X$^+$ lifetime which is of the order of hundreds of ps. Voltage control of DNP is further confirmed in Hanle experiments.
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Submitted 27 March, 2018; v1 submitted 2 February, 2018;
originally announced February 2018.
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Identifying optical signatures of momentum-dark excitons in transition metal dichalcogenide monolayers
Authors:
Jessica Lindlau,
Cedric Robert,
Victor Funk,
Jonathan Förste,
Michael Förg,
Léo Colombier,
Andre Neumann,
Emmanuel Courtade,
Shivangi Shree,
Takashi Taniguchi,
Kenji Watanabe,
Mikhail M. Glazov,
Xavier Marie,
Bernhard Urbaszek,
Alexander Högele
Abstract:
Transition metal dichalcogenide (TMD) monolayers (MLs) exhibit rich photoluminescence spectra associated with interband optical transitions of direct-gap semiconductors. Upon absorption of photons, direct excitons with zero center-of-mass momentum are formed by photo-excited electrons in the conduction band and the respective unoccupied states in the valence band of the same valley. Different spin…
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Transition metal dichalcogenide (TMD) monolayers (MLs) exhibit rich photoluminescence spectra associated with interband optical transitions of direct-gap semiconductors. Upon absorption of photons, direct excitons with zero center-of-mass momentum are formed by photo-excited electrons in the conduction band and the respective unoccupied states in the valence band of the same valley. Different spin configurations of such momentum-direct excitons as well as their charged counterparts provide a powerful platform for spin-valley and microcavity physics in two-dimensional materials. The corresponding spectral signatures, however, are insufficient to explain the main characteristic peaks observed in the photoluminescence spectra of ML TMDs on the basis of momentum-\textit{direct} excitons alone. Here, we show that the notion of momentum-\textit{indirect} excitons is important for the understanding of the versatile photoluminescence features. Taking into account phonon-assisted radiative recombination pathways for electrons and holes from dissimilar valleys, we interpret unidentified peaks in the emission spectra as acoustic and optical phonon sidebands of momentum-dark excitons. Our approach will facilitate the interpretation of optical, valley and spin phenomena in TMDs arising from bright and dark exciton manifolds.
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Submitted 25 October, 2017; v1 submitted 3 October, 2017;
originally announced October 2017.
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An Opportunistic-Non Orthogonal Multiple Access based Cooperative Relaying system over Rician Fading Channels
Authors:
Pranav Kumar Jha,
S Sushmitha Shree,
D. Sriram Kumar
Abstract:
Non-orthogonal Multiple Access (NOMA) has become a salient technology for improving the spectral efficiency of the next generation 5G wireless communication networks. In this paper, the achievable average rate of an Opportunistic Non-Orthogonal Multiple Access (O-NOMA) based Cooperative Relaying System (CRS) is studied under Rician fading channels with Channel State Information (CSI) available at…
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Non-orthogonal Multiple Access (NOMA) has become a salient technology for improving the spectral efficiency of the next generation 5G wireless communication networks. In this paper, the achievable average rate of an Opportunistic Non-Orthogonal Multiple Access (O-NOMA) based Cooperative Relaying System (CRS) is studied under Rician fading channels with Channel State Information (CSI) available at the source terminal. Based on CSI, for opportunistic transmission, the source immediately chooses either the direct transmission or the cooperative NOMA transmission using the relay, which can provide better achievable average rate performance than the existing Conventional-NOMA (C-NOMA) based CRS with no CSI at the source node. Furthermore, a mathematical expression is also derived for the achievable average rate and the results are compared with C-NOMA based CRS with no CSI at the transmitter end, over a range of increasing power allocation coefficients, transmit Signal-to-Noise Ratios (SNRs) and average channel powers. Numerical results show that the CRS using O-NOMA with CSI achieves better spectral efficiency in terms of the achievable average rate than the Conventional-NOMA based CRS without CSI. To check the consistency of the derived analytical results, Monte Carlo simulations are performed which verify that the results are consistent and matched well with the simulation results.
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Submitted 15 January, 2018; v1 submitted 29 September, 2017;
originally announced September 2017.
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Achievable Rate Analysis of Cooperative Relay Assisted Opportunistic-NOMA under Rician Fading Channels with Channel State Information
Authors:
Pranav Kumar Jha,
S Sushmitha Shree,
D. Sriram Kumar
Abstract:
The average achievable rate of an Opportunistic Non-Orthogonal Multiple Access (O-NOMA) based Cooperative Relaying System (CRS) with Channel State Information (CSI) known at the transmitter end is analyzed under Rician fading channels. For opportunistic transmission of data signals, CSI is used for the source-to-relay and source-to-destination links, which helps the transmitter to select the best…
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The average achievable rate of an Opportunistic Non-Orthogonal Multiple Access (O-NOMA) based Cooperative Relaying System (CRS) with Channel State Information (CSI) known at the transmitter end is analyzed under Rician fading channels. For opportunistic transmission of data signals, CSI is used for the source-to-relay and source-to-destination links, which helps the transmitter to select the best out of the cooperative NOMA transmission and the direct transmission of signals, instantaneously. The average achievable rate of the O-NOMA and conventional NOMA (C-NOMA) based CRSs is considered for the performance comparison and the exact and asymptotic analytical expressions of the achievable rates has been provided. Asymptotic results are verified through Monte Carlo simulations for various channel powers and power allocation coefficients. Numerical results verify that the derived analytical results are matched well with the Monte Carlo simulations and shows that O-NOMA-based CRS achieves better rate performance than C-NOMA-based CRS with the increasing power allocation coefficients, transmit Signal-to-Noise Ratios (SNRs) and channel powers.
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Submitted 8 November, 2017; v1 submitted 24 September, 2017;
originally announced September 2017.
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An exhaustive survey of trust models in p2p network
Authors:
S. Udhaya Shree,
Dr. M. S. Saleem Basha
Abstract:
Most of the peers accessing the services are under the assumption that the service accessed in a P2P network is utmost secured. By means of prevailing hard security mechanisms, security goals like authentication, authorization, privacy, non repudiation of services and other hard security issues are resolved. But these mechanisms fail to provide soft security. An exhaustive survey of existing trust…
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Most of the peers accessing the services are under the assumption that the service accessed in a P2P network is utmost secured. By means of prevailing hard security mechanisms, security goals like authentication, authorization, privacy, non repudiation of services and other hard security issues are resolved. But these mechanisms fail to provide soft security. An exhaustive survey of existing trust and reputation models in P2P network regarding service provisioning is presented and challenges are listed.p2p Trust issues like trust bootstrap**, trust evidence procurement, trust assessment, trust interaction outcome evaluation and other trust based classification of peers behaviour into trusted, inconsistent, un trusted, malicious, betraying, redemptive are discussed.
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Submitted 13 October, 2014;
originally announced November 2014.
