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Noise insights into electronic transport
Authors:
S. U. Piatrusha,
L. V. Ginzburg,
E. S. Tikhonov,
D. V. Shovkun,
G. Koblmueller,
A. V. Bubis,
A. K. Grebenko,
A. G. Nasibulin,
V. S. Khrapai
Abstract:
Typical experimental measurement is set up as a study of the system's response to a stationary external excitation. This approach considers any random fluctuation of the signal as spurious contribution which is to be eliminated via time-averaging or, equivalently, bandwidth reduction. Beyond that lies a conceptually different paradigm -- the measurement of the system's spontaneous fluctuations. Th…
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Typical experimental measurement is set up as a study of the system's response to a stationary external excitation. This approach considers any random fluctuation of the signal as spurious contribution which is to be eliminated via time-averaging or, equivalently, bandwidth reduction. Beyond that lies a conceptually different paradigm -- the measurement of the system's spontaneous fluctuations. The goal of this overview article is to demonstrate how current noise measurements bring insight into hidden features of electronic transport in various mesoscopic conductors, ranging from 2D topological insulators to individual carbon nanotubes.
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Submitted 6 June, 2018;
originally announced June 2018.
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Local noise in a diffusive conductor
Authors:
E. S. Tikhonov,
D. V. Shovkun,
D. Ercolani,
F. Rossella,
M. Rocci,
L. Sorba,
S. Roddaro,
V. S. Khrapai
Abstract:
The control and measurement of local non-equilibrium configurations is of utmost importance in applications on energy harvesting, thermoelectrics and heat management in nano-electronics. This challenging task can be achieved with the help of various local probes, prominent examples including superconducting or quantum dot based tunnel junctions, classical and quantum resistors, and Raman thermogra…
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The control and measurement of local non-equilibrium configurations is of utmost importance in applications on energy harvesting, thermoelectrics and heat management in nano-electronics. This challenging task can be achieved with the help of various local probes, prominent examples including superconducting or quantum dot based tunnel junctions, classical and quantum resistors, and Raman thermography. Beyond time-averaged properties, valuable information can also be gained from spontaneous fluctuations of current (noise). From these perspective, however, a fundamental constraint is set by current conservation, which makes noise a characteristic of the whole conductor, rather than some part of it. Here we demonstrate how to remove this obstacle and pick up a local noise temperature of a current biased diffusive conductor with the help of a miniature noise probe. This approach is virtually noninvasive and extends primary local measurements towards strongly non-equilibrium regimes.
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Submitted 15 July, 2016; v1 submitted 25 April, 2016;
originally announced April 2016.
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Andreev reflection in s-type superconductor proximized 3D topological insulator
Authors:
E. S. Tikhonov,
D. V. Shovkun,
V. S. Khrapai,
M. Snelder,
M. P. Stehno,
A. Brinkman,
Y. Huang,
M. S. Golden,
A. A. Golubov
Abstract:
We investigate transport and shot noise in lateral N-TI-S contacts, where N is a normal metal, TI is a Bi-based three dimensional topological insulator (3D TI), and S is an s-type superconductor. In normal state, the devices are in the elastic diffusive transport regime, as demonstrated by a nearly universal value of the shot noise Fano factor $F_{\rm N}\approx1/3$ in magnetic field and in referen…
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We investigate transport and shot noise in lateral N-TI-S contacts, where N is a normal metal, TI is a Bi-based three dimensional topological insulator (3D TI), and S is an s-type superconductor. In normal state, the devices are in the elastic diffusive transport regime, as demonstrated by a nearly universal value of the shot noise Fano factor $F_{\rm N}\approx1/3$ in magnetic field and in reference normal contact. In the absence of magnetic field, we identify the Andreev reflection (AR) regime, which gives rise to the effective charge doubling in shot noise measurements. Surprisingly, the Fano factor $F_{\rm AR}\approx0.22\pm0.02$ is considerably reduced in the AR regime compared to $F_{\rm N}$, in contrast to previous AR experiments in normal metals and semiconductors. We suggest that this effect is related to a finite thermal conduction of the proximized, superconducting TI owing to a residual density of states at low energies.
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Submitted 29 August, 2016; v1 submitted 1 April, 2016;
originally announced April 2016.
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Noise thermometry applied to thermoelectric measurements in InAs nanowires
Authors:
E. S. Tikhonov,
D. V. Shovkun,
V. S. Khrapai,
D. Ercolani,
F. Rossella,
M. Rocci,
L. Sorba,
S. Roddaro
Abstract:
We apply noise thermometry to characterize charge and thermoelectric transport in single InAs nanowires (NWs) at a bath temperature of 4.2 K. Shot noise measurements identify elastic diffusive transport in our NWs with negligible electron-phonon interaction. This enables us to set up a measurement of the diffusion thermopower. Unlike in previous approaches, we make use of a primary electronic nois…
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We apply noise thermometry to characterize charge and thermoelectric transport in single InAs nanowires (NWs) at a bath temperature of 4.2 K. Shot noise measurements identify elastic diffusive transport in our NWs with negligible electron-phonon interaction. This enables us to set up a measurement of the diffusion thermopower. Unlike in previous approaches, we make use of a primary electronic noise thermometry to calibrate a thermal bias across the NW. In particular, this enables us to apply a contact heating scheme, which is much more efficient in creating the thermal bias as compared to conventional substrate heating. The measured thermoelectric Seebeck coefficient exhibits strong mesoscopic fluctuations in dependence on the back-gate voltage that is used to tune the NW carrier density. We analyze the transport and thermoelectric data in terms of approximate Mott's thermopower relation and to evaluate a gate-voltage to Fermi energy conversion factor.
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Submitted 29 February, 2016;
originally announced February 2016.
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Shot noise of the edge transport in the inverted band HgTe quantum wells
Authors:
E. S. Tikhonov,
D. V. Shovkun,
Z. D. Kvon,
N. N. Mikhailov,
S. A. Dvoretsky,
V. S. Khrapai
Abstract:
We investigate the current noise in HgTe-based quantum wells with an inverted band structure in the regime of disordered edge transport. Consistent with previous experiments, the edge resistance strongly exceeds $h/e^2$ and weakly depends on the temperature. The shot noise is well below the Poissonian value and characterized by the Fano factor with gate voltage and sample to sample variations in t…
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We investigate the current noise in HgTe-based quantum wells with an inverted band structure in the regime of disordered edge transport. Consistent with previous experiments, the edge resistance strongly exceeds $h/e^2$ and weakly depends on the temperature. The shot noise is well below the Poissonian value and characterized by the Fano factor with gate voltage and sample to sample variations in the range $0.1<F<0.3$. Given the fact that our devices are shorter than the most pessimistic estimate of the ballistic dephasing length, these observations exclude the possibility of one-dimensional helical edge transport. Instead, we suggest that a disordered multi-mode conduction is responsible for the edge transport in our experiment.
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Submitted 8 May, 2015; v1 submitted 24 February, 2015;
originally announced February 2015.
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Nonlinear transport and noise thermometry in quasi-classical ballistic point contacts
Authors:
E. S. Tikhonov,
M. Yu. Melnikov,
D. V. Shovkun,
L. Sorba,
G. Biasiol,
V. S. Khrapai
Abstract:
We study nonlinear transport and non-equilibrium current noise in quasi-classical point contacts (PCs) defined in a low-density high-quality two-dimensional electron system in GaAs. At not too high bias voltages $V$ across the PC the noise temperature is determined by a Joule heat power and almost independent on the PC resistance that can be associated with a self-heating of the electronic system.…
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We study nonlinear transport and non-equilibrium current noise in quasi-classical point contacts (PCs) defined in a low-density high-quality two-dimensional electron system in GaAs. At not too high bias voltages $V$ across the PC the noise temperature is determined by a Joule heat power and almost independent on the PC resistance that can be associated with a self-heating of the electronic system. This commonly accepted scenario breaks down at increasing $V$, where we observe extra noise accompanied by a strong decrease of the PC's differential resistance. The spectral density of the extra noise is roughly proportional to the nonlinear current contribution in the PC $δS\approx2F^*|eδI|\sim V^2$ with the effective Fano factor $F^*<1$, indicating that a random scattering process is involved. A small perpendicular magnetic field is found to suppress both $δI$ and $δS$. Our observations are consistent with a concept of a drag-like mechanism of the nonlinear transport mediated by electron-electron scattering in the leads of quasi-classical PCs.
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Submitted 9 October, 2014; v1 submitted 10 June, 2014;
originally announced June 2014.
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Finite-size effect in shot noise in hop** conduction
Authors:
E. S. Tikhonov,
V. S. Khrapai,
D. V. Shovkun,
D. Schuh
Abstract:
We study a current shot noise in a macroscopic insulator based on a two-dimensional electron system in GaAs in a variable range hop** (VRH) regime. At low temperature and in a sufficiently depleted sample a shot noise close to a full Poissonian value is measured. This suggests an observation of a finite-size effect in shot noise in the VRH conduction and demonstrates a possibility of accurate qu…
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We study a current shot noise in a macroscopic insulator based on a two-dimensional electron system in GaAs in a variable range hop** (VRH) regime. At low temperature and in a sufficiently depleted sample a shot noise close to a full Poissonian value is measured. This suggests an observation of a finite-size effect in shot noise in the VRH conduction and demonstrates a possibility of accurate quasiparticle charge measurements in the insulating regime.
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Submitted 20 June, 2013; v1 submitted 21 February, 2013;
originally announced February 2013.
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Shot noise measurements in a wide-channel transistor near pinch-off
Authors:
V. S. Khrapai,
D. V. Shovkun
Abstract:
We study a shot noise of a wide channel gated high-frequency transistor at temperature of 4.2K near pinch-off. In this regime, a transition from the metallic to the insulating state is expected to occur, accompanied by the increase of the partition noise. The dependence of the noise spectral density on current is found to be slightly nonlinear. At low currents, the differential Fano factor is enha…
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We study a shot noise of a wide channel gated high-frequency transistor at temperature of 4.2K near pinch-off. In this regime, a transition from the metallic to the insulating state is expected to occur, accompanied by the increase of the partition noise. The dependence of the noise spectral density on current is found to be slightly nonlinear. At low currents, the differential Fano factor is enhanced compared to the universal value 1/3 for metallic diffusive conductors. We explain this result by the effect of thermal fluctuations in a nonlinear regime near pinch-off, without calling for the enhanced partition noise.
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Submitted 28 August, 2010;
originally announced August 2010.
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Intergrain effects in the AC susceptibility of polycrystalline LaFeAsO_{0.94}F_{0.06}: comparison with cuprate superconductors
Authors:
G. Bonsignore,
A. Agliolo Gallitto M. Li Vigni,
J. L. Luo,
G. F. Chen,
N. L. Wang,
D. V. Shovkun
Abstract:
The AC susceptibility at zero DC magnetic field of a polycrystalline sample of LaFeAsO_{0.94}F_{0.06} (T_c = 24 K) has been investigated as a function of the temperature, the amplitude of the AC magnetic field (in the range Hac = 0.003 - 4 Oe) and the frequency (in the range f = 10 kHz - 100 kHz). The temperature dependence of the AC susceptibility exhibits the typical two-step transition arising…
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The AC susceptibility at zero DC magnetic field of a polycrystalline sample of LaFeAsO_{0.94}F_{0.06} (T_c = 24 K) has been investigated as a function of the temperature, the amplitude of the AC magnetic field (in the range Hac = 0.003 - 4 Oe) and the frequency (in the range f = 10 kHz - 100 kHz). The temperature dependence of the AC susceptibility exhibits the typical two-step transition arising from the combined response of superconduncting grains and intergranular weak-coupled medium. The intergranular part of the susceptibility strongly depends on both the amplitude and the frequency of the AC driving field, from few Kelvin below T_c down to T = 4.2 K. Our results show that, in the investigated sample, the intergrain critical current is not determined by pinning of Josephson vortices but by Josephson critical current across neighboring grains.
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Submitted 21 May, 2010;
originally announced May 2010.
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Observation of a Transition from BCS to HTSC-like Superconductivity in Ba_{1-x}K_xBiO_3 Single Crystals
Authors:
G. E. Tsydynzhapov,
A. F. Shevchun,
M. R. Trunin,
V. N. Zverev,
D. V. Shovkun,
N. V. Barkovskiy,
L. A. Klinkova
Abstract:
A study of temperature dependences of the upper critical field B_{c2}(T) and surface impedance Z(T)=R(T)+iX(T) in Ba_{1-x}K_xBiO_3 single crystals that have transition temperatures in the range 6 < T_c < 32 K (roughly 0.6>x>0.4) reveals a transition from BCS to unusual type of superconductivity. B_{c2}(T) curves corresponding to the crystals that have T_c>20 K have positive curvature (like in so…
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A study of temperature dependences of the upper critical field B_{c2}(T) and surface impedance Z(T)=R(T)+iX(T) in Ba_{1-x}K_xBiO_3 single crystals that have transition temperatures in the range 6 < T_c < 32 K (roughly 0.6>x>0.4) reveals a transition from BCS to unusual type of superconductivity. B_{c2}(T) curves corresponding to the crystals that have T_c>20 K have positive curvature (like in some HTSC), and those of the crystals with T_c<15 K fall on the usual Werthamer-Helfand-Hohenberg curve. R(T) and X(T) dependences of the crystals with T_c~30 K and T_c~11 K are respectively linear (like in HTSC) and exponential (BCS) in the temperature range T << T_c. The experimental results are discussed in connection with the extended saddle point model by Abrikosov.
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Submitted 14 June, 2006;
originally announced June 2006.
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Characteristic features of the temperature dependence of the surface impedance in polycrystalline MgB$_2$ samples
Authors:
Yu. A. Nefyodov,
M. R. Trunin,
A. F. Shevchun,
D. V. Shovkun,
N. N. Kolesnikov,
M. P. Kulakov,
A. Agliolo Gallitto,
S. Fricano
Abstract:
The real $R_s(T)$ and imaginary $X_s(T)$ parts of the surface impedance $Z_s(T)=R_s(T)+iX_s(T)$ in polycrystalline MgB$_2$ samples of different density with the critical temperature $T_c\approx 38$ K are measured at the frequency of 9.4 GHz and in the temperature range $5\le T<200$ K. The normal skin-effect condition $R_s(T)=X_s(T)$ at $T\ge T_c$ holds only for the samples of the highest density…
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The real $R_s(T)$ and imaginary $X_s(T)$ parts of the surface impedance $Z_s(T)=R_s(T)+iX_s(T)$ in polycrystalline MgB$_2$ samples of different density with the critical temperature $T_c\approx 38$ K are measured at the frequency of 9.4 GHz and in the temperature range $5\le T<200$ K. The normal skin-effect condition $R_s(T)=X_s(T)$ at $T\ge T_c$ holds only for the samples of the highest density with roughness sizes not more than 0.1 $μ$m. For such samples extrapolation $T\to 0$ of the linear at $T<T_c/2$ temperature dependences $λ_L(T)=X_s(T)/ωμ_0$ and $R_s(T)$ results in values of the London penetration depth $λ_L(0)\approx 600$ Åand residual surface resistance $R_{res}\approx 0.8$ m$Ω$. In the entire temperature range the dependences $R_s(T)$ and $X_s(T)$ are well described by the modified two-fluid model.
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Submitted 5 February, 2002; v1 submitted 3 July, 2001;
originally announced July 2001.
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Superconductivity in the Re-B system
Authors:
G. K. Strukova,
V. F. Degtyareva,
D. V. Shovkun,
V. N. Zverev,
V. M. Kiiko,
A. M. Ionov,
A. N. Chaika
Abstract:
Superconductivity was found for a rhenium boride Re3B at Tc=4.7 K and for ReB2 with Tc in the range from 4.5 to 6.3 K depending on the boron concentrations. Both compounds have the structure different from that of the simple layered diborides, in particular from MgB2.
Superconductivity was found for a rhenium boride Re3B at Tc=4.7 K and for ReB2 with Tc in the range from 4.5 to 6.3 K depending on the boron concentrations. Both compounds have the structure different from that of the simple layered diborides, in particular from MgB2.
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Submitted 15 May, 2001;
originally announced May 2001.
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Triple approach to determination of the c-axis penetration depth in BSCCO crystals
Authors:
M. R. Trunin,
Yu. A. Nefyodov,
D. V. Shovkun,
A. A. Zhukov,
N. Bontemps,
A. Buzdin,
M. Daumens,
H. Enriquez,
T. Tamegai
Abstract:
The c-axis penetration depth $λ_c$ in Bi$_2$Sr$_2$CaCu$_2$O$_{8+δ}$ (BSCCO) single crystals as a function of temperature has been determined using three high-frequency techniques, namely: (i) measurements of the ac-susceptibility at a frequency of 100 kHz for different sample alignments with respect to the ac magnetic field; (ii) measurements of the surface impedance in both superconducting and…
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The c-axis penetration depth $λ_c$ in Bi$_2$Sr$_2$CaCu$_2$O$_{8+δ}$ (BSCCO) single crystals as a function of temperature has been determined using three high-frequency techniques, namely: (i) measurements of the ac-susceptibility at a frequency of 100 kHz for different sample alignments with respect to the ac magnetic field; (ii) measurements of the surface impedance in both superconducting and normal states of BSCCO crystals at 9.4 GHz; (iii) measurements of the surface barrier field $H_J(T)\propto 1/λ_c(T)$ at which Josephson vortices penetrate into the sample. Careful analysis of these measurements, including both numerical solution of the electrodynamic problem of the magnetic field distribution in an anisotropic plate at an arbitrary temperature and influence of defects in the sample, has allowed us to estimate $λ_c(0)\approx 50 μ$m in BSCCO crystals overdoped with oxygen ($T_c\approx 84$ K) and $λ_c(0)\approx 150 μ$m at the optimal do** level ($T_c\approx 90$ K). The results obtained by different techniques are in reasonable agreement.
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Submitted 23 June, 2000;
originally announced June 2000.
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Penetration of Josephson vortices and measurement of the c-axis penetration depth in $Bi_{2}Sr_{2}CaCu_{2}O_{8+δ}$: Interplay of Josephson coupling, surface barrier and defects
Authors:
H. Enriquez,
N. Bontemps,
A. A. Zhukov,
D. V. Shovkun,
M. R. Trunin,
A. Buzdin,
M. Daumens,
T. Tamegai
Abstract:
The first penetration field H_{J}(T) of Josephson vortices is measured through the onset of microwave absorption in the locked state, in slightly overdoped $\rm{Bi_{2}Sr_{2}CaCu_{2}O_{8+δ}}$ single crystals (T_{c} ~ 84 K). The magnitude of H_{J}(T) is too large to be accounted for by the first thermodynamic critical field H_{c1}(T). We discuss the possibility of a Bean-Livingston barrier, also s…
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The first penetration field H_{J}(T) of Josephson vortices is measured through the onset of microwave absorption in the locked state, in slightly overdoped $\rm{Bi_{2}Sr_{2}CaCu_{2}O_{8+δ}}$ single crystals (T_{c} ~ 84 K). The magnitude of H_{J}(T) is too large to be accounted for by the first thermodynamic critical field H_{c1}(T). We discuss the possibility of a Bean-Livingston barrier, also supported by irreversible behavior upon flux exit, and the role of defects, which relates H_{J}(T) to the c-axis penetration depth $λ_{c}(T)$. The temperature dependence of the latter, determined by a cavity perturbation technique and a theoretical estimate of the defect-limited penetration field are used to deduce from H_{J}(T) the absolute value of $λ_{c}(0)=(35 \pm 15) μm$.
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Submitted 23 June, 2000;
originally announced June 2000.
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c-axis penetration depth in Bi$_2$Sr$_2$CaCu$_2$O$_{8+δ}$ single crystals measured by ac-susceptibility and cavity perturbation technique
Authors:
D. V. Shovkun,
M. R. Trunin,
A. A. Zhukov,
Yu. A. Nefyodov,
N. Bontemps,
H. Enriquez,
A. Buzdin,
M. Daumens,
T. Tamegai
Abstract:
The $c$-axis penetration depth $Δλ_c$ in Bi$_2$Sr$_2$CaCu$_2$O$_{8+δ}$ (BSCCO) single crystals as a function of temperature has been determined using two techniques, namely, measurements of the ac-susceptibility at a frequency of 100 kHz and the surface impedance at 9.4 GHz. Both techniques yield an almost linear function $Δλ_c(T)\propto T$ in the temperature range T<0.5 T_c. Electrodynamic anal…
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The $c$-axis penetration depth $Δλ_c$ in Bi$_2$Sr$_2$CaCu$_2$O$_{8+δ}$ (BSCCO) single crystals as a function of temperature has been determined using two techniques, namely, measurements of the ac-susceptibility at a frequency of 100 kHz and the surface impedance at 9.4 GHz. Both techniques yield an almost linear function $Δλ_c(T)\propto T$ in the temperature range T<0.5 T_c. Electrodynamic analysis of the impedance anisotropy has allowed us to estimate $λ_c(0)\approx 50 μ$m in BSCCO crystals overdoped with oxygen ($T_c\approx 84$ K) and $λ_c(0)\approx 150 μ$m at the optimal do** level ($T_c\approx 90$ K).
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Submitted 23 June, 2000;
originally announced June 2000.
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Low-temperature resistivity of single crystals YBa_2Cu_3O_{6+x} in the normal state
Authors:
V. F. Gantmakher,
L. P. Kozeeva,
A. N. Lavrov,
D. A. Pushin,
D. V. Shovkun,
G. E. Tsydynzhapov,
.
Abstract:
A scan of the superconductor -- nonsuperconductor transformation in single crystals YBa_2Cu_3O_{6+x} (x about 0.37) was done in two alternative ways, namely, by applying the magnetic field and by reducing the hole concentration through the oxygen rearrangement. The in-plane normal-state resistivity ρ_{ab} obtained in both cases was quite similar; its temperature dependence can be fitted by logar…
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A scan of the superconductor -- nonsuperconductor transformation in single crystals YBa_2Cu_3O_{6+x} (x about 0.37) was done in two alternative ways, namely, by applying the magnetic field and by reducing the hole concentration through the oxygen rearrangement. The in-plane normal-state resistivity ρ_{ab} obtained in both cases was quite similar; its temperature dependence can be fitted by logarithmic law in the temperature range of almost two decades. However, a different representation of the σ_{ab}=1/ρ_{ab} by a power law typical for a 3D-material near a metal -- insulator transition is also plausible. The vertical conductivity σ_c=1/ρ_c followed the power law and neither σ_c(T), nor ρ_c(T) could be fitted by log(T). It follows from the ρ_c measurements that the transformation at T=0 is split into two transitions: superconductor -- normal-metal and normal-metal -- insulator. In our samples, they are distanced in the oxygen content by Δx\approx0.025.
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Submitted 19 October, 1998; v1 submitted 20 May, 1997;
originally announced May 1997.