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AFM-IR of EHD-Printed PbS Quantum Dots: Quantifying Ligand Exchange at the Nanoscale
Authors:
Lorenzo J. A. Ferraresi,
Gökhan Kara,
Nancy A. Burnham,
Roman Furrer,
Dmitry N. Dirin,
Fabio La Mattina,
Maksym V. Kovalenko,
Michel Calame,
Ivan Shorubalko
Abstract:
Colloidal quantum dots (cQDs) recently emerged as building blocks for semiconductor materials with tuneable properties. Electro-hydrodynamic printing can be used to obtain sub-micrometre patterns of cQDs without elaborate and aggressive photolithography steps. Post-deposition ligand exchange is necessary for the introduction of new functionalities into cQD solids. However, achieving a complete bul…
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Colloidal quantum dots (cQDs) recently emerged as building blocks for semiconductor materials with tuneable properties. Electro-hydrodynamic printing can be used to obtain sub-micrometre patterns of cQDs without elaborate and aggressive photolithography steps. Post-deposition ligand exchange is necessary for the introduction of new functionalities into cQD solids. However, achieving a complete bulk exchange is challenging and conventional infrared spectroscopy lacks the required spatial resolution. Infrared nanospectroscopy (AFM-IR) enables quantitative analysis of the evolution of vibrational signals and structural topography on the nano-metre scale upon ligand substitution on lead sulphide (PbS) cQDs. A solution of ethane-dithiol in acetonitrile demonstrated rapid (~60 s) and controllable exchange of approximately 90% of the ligands, encompassing structures up to ~800 nm in thickness. Prolonged exposures (>1 h) led to the degradation of the microstructures, with a systematic removal of cQDs regulated by surface-to-bulk ratios and solvent interactions. This study establishes a method for the development of devices through a combination of tuneable photoactive materials, additive manufacturing of microstructures, and their quantitative nanometre-scale analysis.
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Submitted 9 January, 2024;
originally announced January 2024.
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Scaling of Hybrid QDs-Graphene Photodetectors to Subwavelength Dimension
Authors:
Gökhan Kara,
Patrik Rohner,
Erfu Wu,
Dmitry N. Dirin,
Roman Furrer,
Dimos Poulikakos,
Maksym V. Kovalenko,
Michel Calame,
Ivan Shorubalko
Abstract:
Emerging colloidal quantum dot (cQD) photodetectors currently challenge established state-of-the-art infrared photodetectors in response speed, spectral tunability, simplicity of solution processable fabrication, and integration onto curved or flexible substrates. Hybrid phototransistors based on 2D materials and cQDs, in particular, are promising due to their inherent photogain enabling direct ph…
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Emerging colloidal quantum dot (cQD) photodetectors currently challenge established state-of-the-art infrared photodetectors in response speed, spectral tunability, simplicity of solution processable fabrication, and integration onto curved or flexible substrates. Hybrid phototransistors based on 2D materials and cQDs, in particular, are promising due to their inherent photogain enabling direct photosignal enhancement. The photogain is sensitive to both, measurement conditions and photodetector geometry. This makes the cross-comparison of devices reported in the literature rather involved. Here, the effect of device length L and width W scaling to subwavelength dimensions (sizes down to 500 nm) on the photoresponse of graphene-PbS cQD phototransistors was experimentally investigated. Photogain and responsivity were found to scale with 1/LW, whereas the photocurrent and specific detectivity were independent of geometrical parameters. The measurements were performed at scaled bias voltage conditions for comparable currents. Contact effects were found to limit the photoresponse for devices with L < 3 μm. The relation of gate voltage, bias current, light intensity, and frequency on the photoresponse was investigated in detail, and a photogating efficiency to assess the cQD-graphene interface is presented. In particular, the specific detectivity values in the range between 10^8 to 10^9 Jones (wavelength of 1550 nm, frequency 6 Hz, room temperature) were found to be limited by the charge transfer across the photoactive interface.
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Submitted 8 December, 2023;
originally announced December 2023.
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Strong lateral exchange coupling and current-induced switching in single-layer ferrimagnetic films with patterned compensation temperature
Authors:
Zhentao Liu,
Zhaochu Luo,
Ivan Shorubalko,
Christof Vockenhuber,
Laura J. Heyderman,
Pietro Gambardella,
Aleš Hrabec
Abstract:
Strong, adjustable magnetic couplings are of great importance to all devices based on magnetic materials. Controlling the coupling between adjacent regions of a single magnetic layer, however, is challenging. In this work, we demonstrate strong exchange-based coupling between arbitrarily shaped regions of a single ferrimagnetic layer. This is achieved by spatially patterning the compensation tempe…
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Strong, adjustable magnetic couplings are of great importance to all devices based on magnetic materials. Controlling the coupling between adjacent regions of a single magnetic layer, however, is challenging. In this work, we demonstrate strong exchange-based coupling between arbitrarily shaped regions of a single ferrimagnetic layer. This is achieved by spatially patterning the compensation temperature of the ferrimagnet by either oxidation or He+ irradiation. The coupling originates at the lateral interface between regions with different compensation temperature and scales inversely with their width. We show that this coupling generates large lateral exchange coupling fields and we demonstrate its application to control the switching of magnetically compensated dots with an electric current.
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Submitted 26 March, 2023;
originally announced March 2023.
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Tunable quantum dots from atomically precise graphene nanoribbons using a multi-gate architecture
Authors:
Jian Zhang,
Oliver Braun,
Gabriela Borin Barin,
Sara Sangtarash,
Jan Overbeck,
Rimah Darawish,
Michael Stiefel,
Roman Furrer,
Antonis Olziersky,
Klaus Müllen,
Ivan Shorubalko,
Abdalghani H. S. Daaoub,
Pascal Ruffieux,
Roman Fasel,
Hatef Sadeghi,
Mickael L. Perrin,
Michel Calame
Abstract:
Atomically precise graphene nanoribbons (GNRs) are increasingly attracting interest due to their largely modifiable electronic properties, which can be tailored by controlling their width and edge structure during chemical synthesis. In recent years, the exploitation of GNR properties for electronic devices has focused on GNR integration into field-effect-transistor (FET) geometries. However, such…
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Atomically precise graphene nanoribbons (GNRs) are increasingly attracting interest due to their largely modifiable electronic properties, which can be tailored by controlling their width and edge structure during chemical synthesis. In recent years, the exploitation of GNR properties for electronic devices has focused on GNR integration into field-effect-transistor (FET) geometries. However, such FET devices have limited electrostatic tunability due to the presence of a single gate. Here, we report on the device integration of 9-atom wide armchair graphene nanoribbons (9-AGNRs) into a multi-gate FET geometry, consisting of an ultra-narrow finger gate and two side gates. We use high-resolution electron-beam lithography (EBL) for defining finger gates as narrow as 12 nm and combine them with graphene electrodes for contacting the GNRs. Low-temperature transport spectroscopy measurements reveal quantum dot (QD) behavior with rich Coulomb diamond patterns, suggesting that the GNRs form QDs that are connected both in series and in parallel. Moreover, we show that the additional gates enable differential tuning of the QDs in the nanojunction, providing the first step towards multi-gate control of GNR-based multi-dot systems.
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Submitted 27 October, 2022; v1 submitted 7 October, 2022;
originally announced October 2022.
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Picosecond Time-Scale Resistive Switching Monitored in Real-Time
Authors:
Miklós Csontos,
Yannik Horst,
Nadia Jimenez Olalla,
Ueli Koch,
Ivan Shorubalko,
András Halbritter,
Juerg Leuthold
Abstract:
The resistance state of filamentary memristors can be tuned by relocating only a few atoms at interatomic distances in the active region of a conducting filament. Thereby the technology holds promise not only in its ultimate downscaling potential and energy efficiency but also in unprecedented speed. Yet, the breakthrough in high-frequency applications still requires the clarification of the domin…
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The resistance state of filamentary memristors can be tuned by relocating only a few atoms at interatomic distances in the active region of a conducting filament. Thereby the technology holds promise not only in its ultimate downscaling potential and energy efficiency but also in unprecedented speed. Yet, the breakthrough in high-frequency applications still requires the clarification of the dominant mechanisms and inherent limitations of ultra-fast resistive switching. Here we investigate bipolar, multilevel resistive switchings in tantalum pentoxide based memristors with picosecond time resolution. We experimentally demonstrate cyclic resistive switching operation due to 20 ps long voltage pulses of alternating polarity. Through the analysis of the real-time response of the memristor we find that the set switching can take place at the picosecond time-scale where it is only compromised by the bandwidth limitations of the experimental setup. In contrast, the completion of the reset transitions significantly exceeds the duration of the ultra-short voltage bias, demonstrating the dominant role of thermal diffusion and underlining the importance of dedicated thermal engineering for future high-frequency memristor circuit applications.
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Submitted 14 September, 2022;
originally announced September 2022.
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Engineering optically active defects in hexagonal boron nitride using focused ion beam and water
Authors:
Evgenii Glushkov,
Michal Macha,
Esther Rath,
Vytautas Navikas,
Nathan Ronceray,
Cheol Yeon Cheon,
Ahmed Aqeel,
Ahmet Avsar,
Kenji Watanabe,
Takashi Taniguchi,
Ivan Shorubalko,
Andras Kis,
Georg Fantner,
Aleksandra Radenovic
Abstract:
Hexagonal boron nitride (hBN) has emerged as a promising material platform for nanophotonics and quantum sensing, hosting optically-active defects with exceptional properties such as high brightness and large spectral tuning. However, precise control over deterministic spatial positioning of emitters in hBN remained elusive for a long time, limiting their proper correlative characterization and ap…
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Hexagonal boron nitride (hBN) has emerged as a promising material platform for nanophotonics and quantum sensing, hosting optically-active defects with exceptional properties such as high brightness and large spectral tuning. However, precise control over deterministic spatial positioning of emitters in hBN remained elusive for a long time, limiting their proper correlative characterization and applications in hybrid devices. Recently, focused ion beam (FIB) systems proved to be useful to engineer several types of spatially-defined emitters with various structural and photophysical properties. Here we systematically explore the physical processes leading to the creation of optically-active defects in hBN using FIB, and find that beam-substrate interaction plays a key role in the formation of defects. These findings are confirmed using transmission electron microscopy that reveals local mechanical deterioration of the hBN layers and local amorphization of ion beam irradiated hBN. Additionally, we show that upon exposure to water, amorphized hBN undergoes a structural and optical transition between two defect types with distinctive emission properties. Moreover, using super-resolution optical microscopy combined with atomic force microscopy, we pinpoint the exact location of emitters within the defect sites, confirming the role of defected edges as primary sources of fluorescent emission. This lays the foundation for FIB-assisted engineering of optically-active defects in hBN with high spatial and spectral control for applications ranging from integrated photonics, to quantum sensing to nanofluidics.
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Submitted 5 July, 2021;
originally announced July 2021.
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Optimized Graphene Electrodes for contacting Graphene Nanoribbons
Authors:
Oliver Braun,
Jan Overbeck,
Maria El Abbassi,
Silvan Käser,
Roman Furrer,
Antonis Olziersky,
Alexander Flasby,
Gabriela Borin Barin,
Rimah Darawish,
Klaus Müllen,
Pascal Ruffieux,
Roman Fasel,
Ivan Shorubalko,
Mickael L. Perrin,
Michel Calame
Abstract:
Atomically precise graphene nanoribbons are a promising emerging class of designer quantum materials with electronic properties that are tunable by chemical design. However, many challenges remain in the device integration of these materials, especially regarding contacting strategies. We report on the device integration of uniaxially aligned and non-aligned 9-atom wide armchair graphene nanoribbo…
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Atomically precise graphene nanoribbons are a promising emerging class of designer quantum materials with electronic properties that are tunable by chemical design. However, many challenges remain in the device integration of these materials, especially regarding contacting strategies. We report on the device integration of uniaxially aligned and non-aligned 9-atom wide armchair graphene nanoribbons (9-AGNRs) in a field-effect transistor geometry using electron beam lithography-defined graphene electrodes. This approach yields controlled electrode geometries and enables higher fabrication throughput compared to previous approaches using an electrical breakdown technique. Thermal annealing is found to be a crucial step for successful device operation resulting in electronic transport characteristics showing a strong gate dependence. Raman spectroscopy confirms the integrity of the graphene electrodes after patterning and of the GNRs after device integration. Our results demonstrate the importance of the GNR-graphene electrode interface and pave the way for GNR device integration with structurally well-defined electrodes.
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Submitted 25 February, 2021;
originally announced February 2021.
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Spatially map** the thermal conductivity of graphene by an opto-thermal method
Authors:
Oliver Braun,
Roman Furrer,
Pascal Butti,
Kishan R. Thodkar,
Ivan Shorubalko,
Ilaria Zardo,
Michel Calame,
Mickael L. Perrin
Abstract:
Map** the thermal transport properties of materials at the nanoscale is of critical importance for optimizing heat conduction in nanoscale devices. Several methods to determine the thermal conductivity of materials have been developed, most of them yielding an average value across the sample, thereby disregarding the role of local variations. Here, we present a method for the spatially-resolved…
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Map** the thermal transport properties of materials at the nanoscale is of critical importance for optimizing heat conduction in nanoscale devices. Several methods to determine the thermal conductivity of materials have been developed, most of them yielding an average value across the sample, thereby disregarding the role of local variations. Here, we present a method for the spatially-resolved assessment of the thermal conductivity of suspended graphene by using a combination of confocal Raman thermometry and a finite-element calculations-based fitting procedure. We demonstrate the working principle of our method by extracting the two-dimensional thermal conductivity map of one pristine suspended single-layer graphene sheet and one irradiated using helium ions. Our method paves the way for spatially resolving the thermal conductivity of other types of layered materials. This is particularly relevant for the design and engineering of nanoscale thermal circuits (e.g. thermal diodes).
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Submitted 15 March, 2021; v1 submitted 28 January, 2021;
originally announced January 2021.
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Nanoladder cantilevers made from diamond and silicon
Authors:
M. Héritier,
A. Eichler,
Y. Pan,
U. Grob,
I. Shorubalko,
M. D. Krass,
Y. Tao,
C. L. Degen
Abstract:
We present a "nanoladder" geometry that minimizes the mechanical dissipation of ultrasensitive cantilevers. A nanoladder cantilever consists of a lithographically patterned scaffold of rails and rungs with feature size $\sim$ 100 nm. Compared to a rectangular beam of the same dimensions, the mass and spring constant of a nanoladder are each reduced by roughly two orders of magnitude. We demonstrat…
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We present a "nanoladder" geometry that minimizes the mechanical dissipation of ultrasensitive cantilevers. A nanoladder cantilever consists of a lithographically patterned scaffold of rails and rungs with feature size $\sim$ 100 nm. Compared to a rectangular beam of the same dimensions, the mass and spring constant of a nanoladder are each reduced by roughly two orders of magnitude. We demonstrate a low force noise of $158 (+62)(-42)\,$zN and $190 (+42)(-33)\,$zN in a one-Hz bandwidth for devices made from silicon and diamond, respectively, measured at temperatures between 100--150 mK. As opposed to bottom-up mechanical resonators like nanowires or nanotubes, nanoladder cantilevers can be batch-fabricated using standard lithography, which is a critical factor for applications in scanning force microscopy.
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Submitted 30 November, 2017;
originally announced November 2017.
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Understanding the interaction between energetic ions and freestanding graphene towards practical 2D perforation
Authors:
Jakob Buchheim,
Roman M. Wyss,
Ivan Shorubalko,
Hyung Gyu Park
Abstract:
We report experimentally and theoretically the behavior of freestanding graphene subject to bombardment of energetic ions, investigating the ability of large-scale patterning of freestanding graphene with nanometer sized features by focused ion beam technology. A precise control over the He+ and Ga+ irradiation offered by focused ion beam techniques enables to investigate the interaction of the en…
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We report experimentally and theoretically the behavior of freestanding graphene subject to bombardment of energetic ions, investigating the ability of large-scale patterning of freestanding graphene with nanometer sized features by focused ion beam technology. A precise control over the He+ and Ga+ irradiation offered by focused ion beam techniques enables to investigate the interaction of the energetic particles and graphene suspended with no support and allows determining sputter yields of the 2D lattice. We find strong dependency of the 2D sputter yield on the species and kinetic energy of the incident ion beams. Freestanding graphene shows material semi-transparency to He+ at high energies (10-30 keV) allowing the passage of >97% He+ particles without creating destructive lattice vacancy. Large Ga+ ions (5-30 keV), in contrast, collide far more often with the graphene lattice to impart significantly higher sputter yield of ~50%. Binary collision theory applied to monolayer and few-layer graphene can successfully elucidate this collision mechanism, in great agreement with experiments. Raman spectroscopy analysis corroborates the passage of a large fraction of He+ ions across graphene without much damaging the lattice whereas several colliding ions create single vacancy defects. Physical understanding of the interaction between energetic particles and suspended graphene can practically lead to reproducible and efficient pattern generation of unprecedentedly small features on 2D materials by design, manifested by our perforation of sub-5-nm pore arrays. This capability of nanometer scale precision patterning of freestanding 2D lattices shows practical applicability of the focused ion beam technology to 2D material processing for device fabrication and integration.
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Submitted 12 January, 2016;
originally announced January 2016.
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Anisotropic Zeeman splitting in p-type GaAs quantum point contacts
Authors:
Y. Komijani,
M. Csontos,
I. Shorubalko,
U. Zuelicke,
T. Ihn,
K. Ensslin,
D. Reuter,
A. D. Wieck
Abstract:
Low-temperature electrical conductance spectroscopy measurements of quantum point contacts implemented in p-type GaAs/AlGaAs heterostructures are used to study the Zeeman splitting of 1D subbands for both in-plane and out-of-plane magnetic field orientations. The resulting in-plane g-factors agree qualitatively with those of previous experiments on quantum wires while the quantitative differences…
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Low-temperature electrical conductance spectroscopy measurements of quantum point contacts implemented in p-type GaAs/AlGaAs heterostructures are used to study the Zeeman splitting of 1D subbands for both in-plane and out-of-plane magnetic field orientations. The resulting in-plane g-factors agree qualitatively with those of previous experiments on quantum wires while the quantitative differences can be understood in terms of the enhanced quasi-1D confinement anisotropy. The influence of confinement potential on the anisotropy is discussed and an estimate for the out-of-plane g-factor is obtained which, in contrast to previous experiments, is closer to the theoretical prediction.
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Submitted 17 January, 2013;
originally announced January 2013.
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Rectification in three-terminal graphene junctions
Authors:
A. Jacobsen,
I. Shorubalko,
L. Maag,
U. Sennhauser,
K. Ensslin
Abstract:
Nonlinear electrical properties of graphene-based three-terminal nanojunctions are presented. Intrinsic rectification of voltage is observed up to room temperature. The sign and the efficiency of the rectification can be tuned by a gate. Changing the charge carrier type from holes to electrons results in a change of the rectification sign. At a bias < 20mV and at a temperature below 4.2K the sign…
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Nonlinear electrical properties of graphene-based three-terminal nanojunctions are presented. Intrinsic rectification of voltage is observed up to room temperature. The sign and the efficiency of the rectification can be tuned by a gate. Changing the charge carrier type from holes to electrons results in a change of the rectification sign. At a bias < 20mV and at a temperature below 4.2K the sign and the efficiency of the rectification are governed by universal conductance fluctuations.
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Submitted 22 July, 2010;
originally announced July 2010.
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Nanostructures in p-GaAs with improved tunability
Authors:
M. Csontos,
Y. Komijani,
I. Shorubalko,
K. Ensslin,
D. Reuter,
A. D. Wieck
Abstract:
A nano-fabrication technique is presented which enables the fabrication of highly tunable devices on p-type, C-doped GaAs/AlGaAs heterostructures containing shallow two-dimensional hole systems. The high tunability of these structures is provided by the complementary electrostatic effects of intrinsic in-plane gates and evaporated metallic top-gates. Quantum point contacts fabricated with this tec…
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A nano-fabrication technique is presented which enables the fabrication of highly tunable devices on p-type, C-doped GaAs/AlGaAs heterostructures containing shallow two-dimensional hole systems. The high tunability of these structures is provided by the complementary electrostatic effects of intrinsic in-plane gates and evaporated metallic top-gates. Quantum point contacts fabricated with this technique were tested by electrical conductance spectroscopy.
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Submitted 26 May, 2010;
originally announced May 2010.
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Evidence for localization and 0.7 anomaly in hole quantum point contacts
Authors:
Y. Komijani,
M. Csontos,
I. Shorubalko,
T. Ihn,
K. Ensslin,
Y. Meir,
D. Reuter,
A. D. Wieck
Abstract:
Quantum point contacts implemented in p-type GaAs/AlGaAs heterostructures are investigated by low-temperature electrical conductance spectroscopy measurements. Besides one-dimensional conductance quantization in units of $2e^{2}/h$ a pronounced extra plateau is found at about $0.7(2e^{2}/h)$ which possesses the characteristic properties of the so-called "0.7 anomaly" known from experiments with…
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Quantum point contacts implemented in p-type GaAs/AlGaAs heterostructures are investigated by low-temperature electrical conductance spectroscopy measurements. Besides one-dimensional conductance quantization in units of $2e^{2}/h$ a pronounced extra plateau is found at about $0.7(2e^{2}/h)$ which possesses the characteristic properties of the so-called "0.7 anomaly" known from experiments with n-type samples. The evolution of the 0.7 plateau in high perpendicular magnetic field reveals the existence of a quasi-localized state and supports the explanation of the 0.7 anomaly based on self-consistent charge localization. These observations are robust when lateral electrical fields are applied which shift the relative position of the electron wavefunction in the quantum point contact, testifying to the intrinsic nature of the underlying physics.
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Submitted 10 May, 2010; v1 submitted 17 August, 2009;
originally announced August 2009.
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Electron counting in quantum dots
Authors:
S. Gustavsson,
R. Leturcq,
M. Studer,
I. Shorubalko,
T. Ihn,
K. Ensslin,
D. C. Driscoll,
A. C. Gossard
Abstract:
We use time-resolved charge detection techniques to investigate single-electron tunneling in semiconductor quantum dots. The ability to detect individual charges in real-time makes it possible to count electrons one-by-one as they pass through the structure. The setup can thus be used as a high-precision current meter for measuring ultra-low currents, with resolution several orders of magnitude…
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We use time-resolved charge detection techniques to investigate single-electron tunneling in semiconductor quantum dots. The ability to detect individual charges in real-time makes it possible to count electrons one-by-one as they pass through the structure. The setup can thus be used as a high-precision current meter for measuring ultra-low currents, with resolution several orders of magnitude better than that of conventional current meters.
In addition to measuring the average current, the counting procedure also makes it possible to investigate correlations between charge carriers. In quantum dots, we find that the strong Coulomb interaction makes electrons try to avoid each other. This leads to electron anti-bunching, giving stronger correlations and reduced noise compared to a current carried by statistically independent electrons.
The charge detector is implemented by monitoring changes in conductance in a near-by capacitively coupled quantum point contact. We find that the quantum point contact not only serves as a detector but also causes a back-action onto the measured device. Electron scattering in the quantum point contact leads to emission of microwave radiation. The radiation is found to induce an electronic transition between two quantum dots, similar to the absorption of light in real atoms and molecules. Using a charge detector to probe the electron transitions, we can relate a single-electron tunneling event to the absorption of a single photon. Moreover, since the energy levels of the double quantum dot can be tuned by external gate voltages, we use the device as a frequency-selective single-photon detector operating at microwave energies.
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Submitted 28 May, 2009;
originally announced May 2009.
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Quantum dots investigated with charge detection techniques
Authors:
T. Ihn,
Simon Gustavsson,
Urszula Gasser,
Bruno Küng,
Thomas Müller,
Roland Schleser,
Martin Sigrist,
Ivan Shorubalko,
Renaud Leturcq,
Klaus Ensslin
Abstract:
The detection of the quantum dot charge state using a quantum point contact charge detector has opened a new exciting route for the investigation of quantum dot devices in recent years. In particular, time-resolved charge detection allowed the precise measurement of quantum dot shot noise at sub-femtoampere current levels, and the full counting statistics of the current. The technique can be app…
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The detection of the quantum dot charge state using a quantum point contact charge detector has opened a new exciting route for the investigation of quantum dot devices in recent years. In particular, time-resolved charge detection allowed the precise measurement of quantum dot shot noise at sub-femtoampere current levels, and the full counting statistics of the current. The technique can be applied to different material systems and holds promise for the future application in quantum dot based quantum information processing implementations. We review recent experiments employing this charge detection technique, including the self-interference of individual electrons and back-action phenomena.
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Submitted 20 May, 2009;
originally announced May 2009.
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Noise-induced spectral shift measured in a Double Quantum Dot
Authors:
Bruno Küng,
Simon Gustavsson,
Theodore Choi,
Ivan Shorubalko,
Thomas Ihn,
Silke Schön,
Fabian Hassler,
Gianni Blatter,
Klaus Ensslin
Abstract:
We measure the shot noise of a quantum point-contact using a capacitively coupled InAs double quantum dot as an on-chip sensor. Our measurement signals are the (bidirectional) interdot electronic tunneling rates which are determined by means of time-resolved charge sensing. The detector frequency is set by the relative detuning of the energy levels in the two dots. For nonzero detuning, the nois…
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We measure the shot noise of a quantum point-contact using a capacitively coupled InAs double quantum dot as an on-chip sensor. Our measurement signals are the (bidirectional) interdot electronic tunneling rates which are determined by means of time-resolved charge sensing. The detector frequency is set by the relative detuning of the energy levels in the two dots. For nonzero detuning, the noise in the quantum point contact generates inelastic tunneling in the double dot and thus causes an increase in the interdot tunneling rate. Conservation of spectral weight in the dots implies that this increase must be compensated by a decrease in the rate close to zero detuning, which is quantitatively confirmed in our experiment.
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Submitted 21 September, 2009; v1 submitted 23 April, 2009;
originally announced April 2009.
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Correlated Counting of Single Electrons in a Nanowire Double Quantum Dot
Authors:
Theodore Choi,
Ivan Shorubalko,
Simon Gustavsson,
Silke Schön,
Klaus Ensslin
Abstract:
We report on correlated real-time detection of individual electrons in an InAs nanowire double quantum dot. Two self-aligned quantum point contacts in an underlying two-dimensional electron gas material serve as highly sensitive charge detectors for the double quantum dot. Tunnel processes of individual electrons and all tunnel rates are determined by simultaneous measurements of the correlated…
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We report on correlated real-time detection of individual electrons in an InAs nanowire double quantum dot. Two self-aligned quantum point contacts in an underlying two-dimensional electron gas material serve as highly sensitive charge detectors for the double quantum dot. Tunnel processes of individual electrons and all tunnel rates are determined by simultaneous measurements of the correlated signals of the quantum point contacts.
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Submitted 10 December, 2008;
originally announced December 2008.
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Dynamics of coupled spins in quantum dots with strong spin-orbit interaction
Authors:
A. Pfund,
I. Shorubalko,
K. Ensslin,
R. Leturcq
Abstract:
We investigated the time dependence of two-electron spin states in a double quantum dot fabricated in an InAs nanowire. In this system, spin-orbit interaction has substantial influence on the spin states of confined electrons. Pum** single electrons through a Pauli spin-blockade configuration allowed to probe the dynamics of the two coupled spins via their influence on the pumped current. We o…
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We investigated the time dependence of two-electron spin states in a double quantum dot fabricated in an InAs nanowire. In this system, spin-orbit interaction has substantial influence on the spin states of confined electrons. Pum** single electrons through a Pauli spin-blockade configuration allowed to probe the dynamics of the two coupled spins via their influence on the pumped current. We observed spin-relaxation with a magnetic field dependence different from GaAs dots, which can be explained by spin-orbit interaction. Oscillations were detected for times shorter than the relaxation time, which we attribute to coherent evolution of the spin states.
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Submitted 23 July, 2008;
originally announced July 2008.
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Observation of excited states in a graphene quantum dot
Authors:
S. Schnez,
F. Molitor,
C. Stampfer,
J. Guettinger,
I. Shorubalko,
T. Ihn,
K. Ensslin
Abstract:
We demonstrate that excited states in single-layer graphene quantum dots can be detected via direct transport experiments. Coulomb diamond measurements show distinct features of sequential tunneling through an excited state. Moreover, the onset of inelastic cotunneling in the diamond region could be detected. For low magnetic fields, the positions of the single-particle energy levels fluctuate o…
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We demonstrate that excited states in single-layer graphene quantum dots can be detected via direct transport experiments. Coulomb diamond measurements show distinct features of sequential tunneling through an excited state. Moreover, the onset of inelastic cotunneling in the diamond region could be detected. For low magnetic fields, the positions of the single-particle energy levels fluctuate on the scale of a flux quantum penetrating the dot area. For higher magnetic fields, the transition to the formation of Landau levels is observed. Estimates based on the linear energy-momentum relation of graphene give carrier numbers of the order of 10 for our device.
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Submitted 11 March, 2009; v1 submitted 17 July, 2008;
originally announced July 2008.
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Detecting THz current fluctuations in a quantum point contact using a nanowire quantum dot
Authors:
S. Gustavsson,
I. Shorubalko,
R. Leturcq,
T. Ihn,
K. Ensslin,
S. Schön
Abstract:
We use a nanowire quantum dot to probe high-frequency current fluctuations in a nearby quantum point contact. The fluctuations drive charge transitions in the quantum dot, which are measured in real-time with single-electron detection techniques. The quantum point contact (GaAs) and the quantum dot (InAs) are fabricated in different material systems, which indicates that the interactions are med…
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We use a nanowire quantum dot to probe high-frequency current fluctuations in a nearby quantum point contact. The fluctuations drive charge transitions in the quantum dot, which are measured in real-time with single-electron detection techniques. The quantum point contact (GaAs) and the quantum dot (InAs) are fabricated in different material systems, which indicates that the interactions are mediated by photons rather than phonons. The large energy scales of the nanowire quantum dot allow radiation detection in the long-wavelength infrared regime.
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Submitted 9 May, 2008;
originally announced May 2008.
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Measuring current by counting electrons in a nanowire quantum dot
Authors:
S. Gustavsson,
I. Shorubalko,
R. Leturcq,
S. Schön,
K. Ensslin
Abstract:
We measure current by counting single electrons tunneling through an InAs nanowire quantum dot. The charge detector is realized by fabricating a quantum point contact in close vicinity to the nanowire. The results based on electron counting compare well to a direct measurements of the quantum dot current, when taking the finite bandwidth of the detector into account. The ability to detect single…
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We measure current by counting single electrons tunneling through an InAs nanowire quantum dot. The charge detector is realized by fabricating a quantum point contact in close vicinity to the nanowire. The results based on electron counting compare well to a direct measurements of the quantum dot current, when taking the finite bandwidth of the detector into account. The ability to detect single electrons also opens up possibilities for manipulating and detecting individual spins in nanowire quantum dots.
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Submitted 21 December, 2007;
originally announced December 2007.
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Self-aligned charge read-out for InAs nanowire quantum dots
Authors:
I. Shorubalko,
R. Leturcq,
A. Pfund,
D. Tyndall,
R. Krischek,
S. Schon,
K. Ensslin
Abstract:
A highly sensitive charge detector is realized for a quantum dot in an InAs nanowire. We have developed a self-aligned etching process to fabricate in a single step a quantum point contact in a two-dimensional electron gas and a quantum dot in an InAs nanowire. The quantum dot is strongly coupled to the underlying point contact which is used as a charge detector. The addition of one electron to…
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A highly sensitive charge detector is realized for a quantum dot in an InAs nanowire. We have developed a self-aligned etching process to fabricate in a single step a quantum point contact in a two-dimensional electron gas and a quantum dot in an InAs nanowire. The quantum dot is strongly coupled to the underlying point contact which is used as a charge detector. The addition of one electron to the quantum dot leads to a change of the conductance of the charge detector by typically 20%. The charge sensitivity of the detector is used to measure Coulomb diamonds as well as charging events outside the dot. Charge stability diagrams measured by transport through the quantum dot and charge detection merge perfectly.
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Submitted 18 March, 2008; v1 submitted 11 December, 2007;
originally announced December 2007.
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Two-dimensional imaging of the spin-orbit effective magnetic field
Authors:
L. Meier,
G. Salis,
E. Gini,
I. Shorubalko,
K. Ensslin
Abstract:
We report on spatially resolved measurements of the spin-orbit effective magnetic field in a GaAs/InGaAs quantum-well. Biased gate electrodes lead to an electric-field distribution in which the quantum-well electrons move according to the local orientation and magnitude of the electric field. This motion induces Rashba and Dresselhaus effective magnetic fields. The projection of the sum of these…
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We report on spatially resolved measurements of the spin-orbit effective magnetic field in a GaAs/InGaAs quantum-well. Biased gate electrodes lead to an electric-field distribution in which the quantum-well electrons move according to the local orientation and magnitude of the electric field. This motion induces Rashba and Dresselhaus effective magnetic fields. The projection of the sum of these fields onto an external magnetic field is monitored locally by measuring the electron spin-precession frequency using time-resolved Faraday rotation. A comparison with simulations shows good agreement with the experimental data.
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Submitted 7 December, 2007;
originally announced December 2007.
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Pauli spin-blockade in an InAs nanowire double quantum dot
Authors:
A. Pfund,
I. Shorubalko,
R. Leturcq,
K. Ensslin
Abstract:
We measure transport at finite bias through a double quantum dot formed by top-gates in an InAs nanowire. Pauli spin-bockade is confirmed with several electrons in the dot. This is expected due to the small exchange interactions in InAs and the large singlet-triplet splitting, which can be measured and tuned by a gate voltage.
We measure transport at finite bias through a double quantum dot formed by top-gates in an InAs nanowire. Pauli spin-bockade is confirmed with several electrons in the dot. This is expected due to the small exchange interactions in InAs and the large singlet-triplet splitting, which can be measured and tuned by a gate voltage.
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Submitted 20 September, 2007;
originally announced September 2007.
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Measurement of Rashba and Dresselhaus spin-orbit magnetic fields
Authors:
Lorenz Meier,
Gian Salis,
Ivan Shorubalko,
Emilio Gini,
Silke Schoen,
Klaus Ensslin
Abstract:
Spin-orbit coupling is a manifestation of special relativity. In the reference frame of a moving electron, electric fields transform into magnetic fields, which interact with the electron spin and lift the degeneracy of spin-up and spin-down states. In solid-state systems, the resulting spin-orbit fields are referred to as Dresselhaus or Rashba fields, depending on whether the electric fields or…
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Spin-orbit coupling is a manifestation of special relativity. In the reference frame of a moving electron, electric fields transform into magnetic fields, which interact with the electron spin and lift the degeneracy of spin-up and spin-down states. In solid-state systems, the resulting spin-orbit fields are referred to as Dresselhaus or Rashba fields, depending on whether the electric fields originate from bulk or structure inversion asymmetry, respectively. Yet, it remains a challenge to determine the absolute value of both contributions in a single sample. Here we show that both fields can be measured by optically monitoring the angular dependence of the electrons' spin precession on their direction of movement with respect to the crystal lattice. Furthermore, we demonstrate spin resonance induced by the spin-orbit fields. We apply our method to GaAs/InGaAs quantum-well electrons, but it can be used universally to characterise spin-orbit interactions in semiconductors, facilitating the design of spintronic devices.
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Submitted 16 September, 2007;
originally announced September 2007.
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Optimized stray-field-induced enhancement of the electron spin precession by buried Fe gates
Authors:
L. Meier,
G. Salis,
N. Moll,
C. Ellenberger,
I. Shorubalko,
U. Wahlen,
K. Ensslin,
E. Gini
Abstract:
The magnetic stray field from Fe gates is used to modify the spin precession frequency of InGaAs/GaAs quantum-well electrons in an external magnetic field. By using an etching process to position the gates directly in the plane of the quantum well, the stray-field influence on the spin precession increases significantly compared with results from previous studies with top-gated structures. In li…
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The magnetic stray field from Fe gates is used to modify the spin precession frequency of InGaAs/GaAs quantum-well electrons in an external magnetic field. By using an etching process to position the gates directly in the plane of the quantum well, the stray-field influence on the spin precession increases significantly compared with results from previous studies with top-gated structures. In line with numerical simulations, the stray-field-induced precession frequency increases as the gap between the ferromagnetic gates is reduced. The inhomogeneous stray field leads to additional spin dephasing.
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Submitted 13 September, 2007;
originally announced September 2007.
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Spin state mixing in InAs double quantum dots
Authors:
A. Pfund,
I. Shorubalko,
K. Ensslin,
R. Leturcq
Abstract:
We quantify the contributions of hyperfine and spin-orbit mediated singlet-triplet mixing in weakly coupled InAs quantum dots by electron transport spectroscopy in the Pauli spin blockade regime. In contrast to double dots in GaAs, the spin-orbit coupling is found to be more than two orders of magnitudes larger than the hyperfine mixing energy. It is already effective at magnetic fields of a few…
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We quantify the contributions of hyperfine and spin-orbit mediated singlet-triplet mixing in weakly coupled InAs quantum dots by electron transport spectroscopy in the Pauli spin blockade regime. In contrast to double dots in GaAs, the spin-orbit coupling is found to be more than two orders of magnitudes larger than the hyperfine mixing energy. It is already effective at magnetic fields of a few mT, where deviations from hyperfine mixing are observed.
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Submitted 7 April, 2007;
originally announced April 2007.
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Suppression of spin relaxation in an InAs nanowire double quantum dot
Authors:
A. Pfund,
I. Shorubalko,
K. Ensslin,
R. Leturcq
Abstract:
We investigate the triplet-singlet relaxation in a double quantum dot defined by top-gates in an InAs nanowire. In the Pauli spin blockade regime, the leakage current can be mainly attributed to spin relaxation. While at weak and strong inter-dot coupling relaxation is dominated by two individual mechanisms, the relaxation is strongly reduced at intermediate coupling and finite magnetic field. I…
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We investigate the triplet-singlet relaxation in a double quantum dot defined by top-gates in an InAs nanowire. In the Pauli spin blockade regime, the leakage current can be mainly attributed to spin relaxation. While at weak and strong inter-dot coupling relaxation is dominated by two individual mechanisms, the relaxation is strongly reduced at intermediate coupling and finite magnetic field. In addition we observe a charateristic bistability of the spin-non conserving current as a function of magnetic field. We propose a model where these features are explained by the polarization of nuclear spins enabled by the interplay between hyperfine and spin-orbit mediated relaxation.
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Submitted 3 January, 2007;
originally announced January 2007.
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Top-gate defined double quantum dots in InAs nanowires
Authors:
A. Pfund,
I. Shorubalko,
R. Leturcq,
K. Ensslin
Abstract:
We present low temperature transport measurements on double quantum dots in InAs nanowires grown by metal-organic vapor phase epitaxy. Two dots in series are created by lithographically defined top-gates with a procedure involving no extra insulating layer. We demonstrate the full tunability from strong to weak coupling between the dots. The quantum mechanical nature of the coupling leads to the…
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We present low temperature transport measurements on double quantum dots in InAs nanowires grown by metal-organic vapor phase epitaxy. Two dots in series are created by lithographically defined top-gates with a procedure involving no extra insulating layer. We demonstrate the full tunability from strong to weak coupling between the dots. The quantum mechanical nature of the coupling leads to the formation of a molecular state extending over both dots. The excitation spectra of the individual dots are observable by their signatures in the nonlinear transport.
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Submitted 19 September, 2006;
originally announced September 2006.
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Tunable few electron quantum dots in InAs nanowires
Authors:
I. Shorubalko,
A. Pfund,
R. Leturcq,
M. T. Borgström,
F. Gramm,
E. Müller,
E. Gini,
K. Ensslin
Abstract:
Quantum dots realized in InAs are versatile systems to study the effect of spin-orbit interaction on the spin coherence, as well as the possibility to manipulate single spins using an electric field. We present transport measurements on quantum dots realized in InAs nanowires. Lithographically defined top-gates are used to locally deplete the nanowire and to form tunneling barriers. By using thr…
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Quantum dots realized in InAs are versatile systems to study the effect of spin-orbit interaction on the spin coherence, as well as the possibility to manipulate single spins using an electric field. We present transport measurements on quantum dots realized in InAs nanowires. Lithographically defined top-gates are used to locally deplete the nanowire and to form tunneling barriers. By using three gates, we can form either single quantum dots, or two quantum dots in series along the nanowire. Measurements of the stability diagrams for both cases show that this method is suitable for producing high quality quantum dots in InAs.
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Submitted 19 September, 2006;
originally announced September 2006.
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Experimental investigation of the breakdown of the Onsager-Casimir relations
Authors:
C. A. Marlow,
R. P. Taylor,
M. Fairbanks,
I. Shorubalko,
H. Linke
Abstract:
We use magnetoconductance fluctuation measurements of phase-coherent semiconductor billiards to quantify the contributions to the nonlinear electric conductance that are asymmetric under reversal of magnetic field. We experimentally determine that the average asymmetric contribution is linear in magnetic field (for magnetic flux much larger than one flux quantum) and that its magnitude depends o…
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We use magnetoconductance fluctuation measurements of phase-coherent semiconductor billiards to quantify the contributions to the nonlinear electric conductance that are asymmetric under reversal of magnetic field. We experimentally determine that the average asymmetric contribution is linear in magnetic field (for magnetic flux much larger than one flux quantum) and that its magnitude depends on billiard geometry. In addition, we find an unexpected asymmetry in the power spectrum characteristics of the magnetoconductance with respect to reversal of magnetic field and bias voltage.
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Submitted 18 October, 2005;
originally announced October 2005.
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Symmetry of two terminal, non-linear electric conduction
Authors:
A. Lofgren,
C. A. Marlow,
I. Shorubalko,
R. P. Taylor,
P. Omling,
L. Samuelson,
H. Linke
Abstract:
The well-established symmetry relations for linear transport phenomena can not, in general, be applied in the non-linear regime. Here we propose a set of symmetry relations with respect to bias voltage and magnetic field for the non-linear conductance of two-terminal electric conductors. We experimentally confirm these relations using phase-coherent, semiconductor quantum dots.
The well-established symmetry relations for linear transport phenomena can not, in general, be applied in the non-linear regime. Here we propose a set of symmetry relations with respect to bias voltage and magnetic field for the non-linear conductance of two-terminal electric conductors. We experimentally confirm these relations using phase-coherent, semiconductor quantum dots.
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Submitted 24 November, 2003; v1 submitted 4 September, 2003;
originally announced September 2003.
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Quantum behavior in nanoscale ballistic rectifiers and artificial materials
Authors:
A. Löfgren,
I. Shorubalko,
P. Omling,
A. M. Song
Abstract:
Low-temperature experiments are performed on novel nanoscale nonlinear devices (ballistic rectifiers) as well as nano-structured artificial materials, fabricated from an InP/InGaAs quantum well wafer. A DC output is generated between the lower and upper contacts of these devices, when an AC voltage is applied between the left and right contacts. As the temperature is lowered from room temperatur…
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Low-temperature experiments are performed on novel nanoscale nonlinear devices (ballistic rectifiers) as well as nano-structured artificial materials, fabricated from an InP/InGaAs quantum well wafer. A DC output is generated between the lower and upper contacts of these devices, when an AC voltage is applied between the left and right contacts. As the temperature is lowered from room temperature, the DC output voltage of the ballistic rectifiers gradually changes from negative to positive. Since the negative output at high temperatures has been well understood in the framework of the classical ballistic electron transport, our results indicate that the electron transport comes into a new physical regime at low temperatures. Furthermore, we find that at even lower temperatures, the devices generate a pronounced oscillatory output as a function of the applied bias. Very similar phenomena are observed in the artificial nanomaterials, suggesting the existence of a common mechanism. We present a simple model based on quantum transport, which explains the key phenomena that we have observed at low temperatures.
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Submitted 21 March, 2003;
originally announced March 2003.
