Showing 1–14 of 14 results for author: Shorokhov, A V

Partial electron localization in a finite-size superlattice placed in an electric field

Authors: K. R. Vlasov, M. A. Pyataev, A. V. Shorokhov

Abstract: Partial electron localization in a finite-size superlattice placed in an electric field is considered. The role of electric field in forming of quasilocalized states is investigated. A quantitative criterion for the degree of partial localization is suggested based on analysis of maximal probability density of finding an electron at a given point. It is found that with increase in the electric fie… ▽ More Partial electron localization in a finite-size superlattice placed in an electric field is considered. The role of electric field in forming of quasilocalized states is investigated. A quantitative criterion for the degree of partial localization is suggested based on analysis of maximal probability density of finding an electron at a given point. It is found that with increase in the electric field the degree of localization does not increase monotonically. Furthermore, the localization is affected stronger by the amplitude of superlattice potential than by the electric field. △ Less

Submitted 15 September, 2017; originally announced September 2017.

Comments: 11 pages (one-column), 6 figures (colored), submitted to Semiconductors

Phonon assisted resonant tunnelling and its phonons control

Authors: F. V. Kusmartsev, V. D. Krevchik, M. B. Semenov, D. O. Filatov, A. V. Shorokhov, A. A. Bukharaev, Y. Dakhnovsky, A. V. Nikolaev, N. A. Pyataev, R. V. Zaytsev, P. V. Krevchik, I. A. Egorov, K. Yamamoto, A. K. Aringazin

Abstract: We observe a series of sharp resonant features in the tunnelling differential conductance of InAs quantum dots. We found that dissipative quantum tunnelling has a strong influence on the operation of nano-devices. Because of such tunnelling the current-voltage characteristics of tunnel contact created between atomic force microscope tip and a surface of InAs/GaAs quantum dots display many interest… ▽ More We observe a series of sharp resonant features in the tunnelling differential conductance of InAs quantum dots. We found that dissipative quantum tunnelling has a strong influence on the operation of nano-devices. Because of such tunnelling the current-voltage characteristics of tunnel contact created between atomic force microscope tip and a surface of InAs/GaAs quantum dots display many interesting peaks. We found that the number, position, and heights of these peaks are associated with the phonon modes involved. To describe the found effect we use a quasi-classical approximation. There the tunnelling current is related to a creation of a dilute instanton-anti-instanton gas. Our experimental data are well described with exactly solvable model where one charged particle is weakly interacting with two promoting phonon modes associated with external medium. We conclude that the characteristics of the tunnel nanoelectronic devices can thus be controlled by a proper choice of phonons existing in materials, which are involved. △ Less

Submitted 2 October, 2016; originally announced October 2016.

Comments: 6 pages, 4 figures, JETP Lett. (2016)

Physical Principles of the Amplification of Electromagnetic Radiation Due to Negative Electron Masses in a Semiconductor Superlattice

Authors: A. V. Shorokhov, M. A. Pyataev, N. N. Khvastunov, T. Hyart, F. V. Kusmartsev, K. N. Alekseev

Abstract: In a superlattice placed in crossed electric and magnetic fields, under certain conditions, the inversion of electron population can appear at which the average energy of electrons is above the middle of the miniband and the effective mass of the electron is negative. This is the implementation of the negative effective mass amplifier and generator (NEMAG) in the superlattice. It can result in the… ▽ More In a superlattice placed in crossed electric and magnetic fields, under certain conditions, the inversion of electron population can appear at which the average energy of electrons is above the middle of the miniband and the effective mass of the electron is negative. This is the implementation of the negative effective mass amplifier and generator (NEMAG) in the superlattice. It can result in the amplification and generation of terahertz radiation even in the absence of negative differential conductivity. △ Less

Submitted 16 March, 2015; originally announced March 2015.

Comments: 5 pages, 3 figures

Journal ref: JETP Letters, Volume 100, Issue 12, pp 766-770 (2014)

Effect of temperature on resonant electron transport through stochastic conduction channels in superlattices

Authors: A. O. Selskii, A. A. Koronovskii, A. E. Hramov, O. I. Moskalenko, K. N. Alekseev, M. T. Greenaway, T. M. Fromhold, A. V. Shorokhov, N. N. Khvastunov, A. G. Balanov

Abstract: We show that resonant electron transport in semiconductor superlattices with an applied electric and tilted magnetic field can, surprisingly, become more pronounced as the lattice and conduction electron temperature increases from 4.2 K to room temperature and beyond. It has previously been demonstrated that at certain critical field parameters, the semiclassical trajectories of electrons in the l… ▽ More We show that resonant electron transport in semiconductor superlattices with an applied electric and tilted magnetic field can, surprisingly, become more pronounced as the lattice and conduction electron temperature increases from 4.2 K to room temperature and beyond. It has previously been demonstrated that at certain critical field parameters, the semiclassical trajectories of electrons in the lowest miniband of the superlattice change abruptly from fully localised to completely unbounded. The unbounded electron orbits propagate through intricate web patterns, known as stochastic webs, in phase space, which act as conduction channels for the electrons and produce a series of resonant peaks in the electron drift velocity versus electric field curves. Here, we show that increasing the lattice temperature strengthens these resonant peaks due to a subtle interplay between thermal population of the conduction channels and transport along them. This enhances both the electron drift velocity and the influence of the stochastic webs on the current-voltage characteristics, which we calculate by making self-consistent solutions of the coupled electron transport and Poisson equations throughout the superlattice. These solutions reveal that increasing the temperature also transforms the collective electron dynamics by changing both the threshold voltage required for the onset of self-sustained current oscillations, produced by propagating charge domains, and the oscillation frequency. △ Less

Submitted 12 August, 2011; originally announced August 2011.

Comments: 8 figures, 12 pages

Intraband resonance Raman scattering in anisotropic quantum dots

Authors: A. V. Shorokhov, V. A. Margulis

Abstract: We have developed a theory of the one-phonon intraband resonance Raman scattering (IRRS) in anisotropic quantum dots subjected to an arbitrarily directed magnetic field. The differential Raman cross section is obtained. The resonance structure of the Raman cross section is studied. It is shown that the quantum dot subjected in a magnetic field can be used as the detector of phonon modes. The int… ▽ More We have developed a theory of the one-phonon intraband resonance Raman scattering (IRRS) in anisotropic quantum dots subjected to an arbitrarily directed magnetic field. The differential Raman cross section is obtained. The resonance structure of the Raman cross section is studied. It is shown that the quantum dot subjected in a magnetic field can be used as the detector of phonon modes. The interesting multiplet structure of the resonance peaks is studied. △ Less

Submitted 7 January, 2010; originally announced January 2010.

Comments: 5 pages; 5 figures

Theoretical backgrounds of nonlinear THz spectroscopy of semiconductor superlattices

Authors: Alexey V. Shorokhov, Kirill N. Alekseev

Abstract: We consider terahertz absorption and gain in a single miniband of semiconductor superlattice subject to a bichromatic electric field in the most general case of commensurate frequencies of the probe and pump fields. Using an exact solution of Boltzmann transport equation, we show that in the small-signal limit the formulas for absorption always contain two distinct terms related to the parametri… ▽ More We consider terahertz absorption and gain in a single miniband of semiconductor superlattice subject to a bichromatic electric field in the most general case of commensurate frequencies of the probe and pump fields. Using an exact solution of Boltzmann transport equation, we show that in the small-signal limit the formulas for absorption always contain two distinct terms related to the parametric and incoherent interactions of miniband electrons with the alternating pump field. It provides a theoretical background for a control of THz gain without switching to the negative differential conductivity state. For pedagogical reasons we present derivations of formulas in detail. △ Less

Submitted 10 November, 2008; originally announced November 2008.

Comments: 14 pages

Journal ref: Intern J Mod Phys B 23 (2009) 4448-4458

Spin-hybrid-phonon resonance in anisotropic quantum dots

Authors: V. A. Margulis, A. V. Shorokhov

Abstract: We have studied the absorption of electromagnetic radiation of an anisotropic quantum dot taking into account the spin-flip processes that is associated with the interaction of the electrons with optical phonons. It is shown that these processes lead to the resonance absorption. Explicit formula is derived for the absorption coefficient. The positions of the resonances peaks are found. We have studied the absorption of electromagnetic radiation of an anisotropic quantum dot taking into account the spin-flip processes that is associated with the interaction of the electrons with optical phonons. It is shown that these processes lead to the resonance absorption. Explicit formula is derived for the absorption coefficient. The positions of the resonances peaks are found. △ Less

Submitted 4 January, 2008; originally announced January 2008.

Hybrid-impurity resonances in anisotropic quantum dots

Authors: V. A. Margulis, A. V. Shorokhov

Abstract: The absorption of electromagnetic radiation of an anisotropic quantum dot is theoretically investigated taking into account the processes associated with simultaneous scattering from ionized impurities. It is shown that the scattering of electrons by impurities leads to the resonance absorption even if we have only one impurity in the quantum dot. Explicit formula is derived for the absorption c… ▽ More The absorption of electromagnetic radiation of an anisotropic quantum dot is theoretically investigated taking into account the processes associated with simultaneous scattering from ionized impurities. It is shown that the scattering of electrons by impurities leads to the resonance absorption even if we have only one impurity in the quantum dot. Explicit formula is derived for the absorption coefficient. The positions of the resonances peaks are found. The effects of external magnetic field on the resonance absorption are studied. △ Less

Submitted 16 May, 2008; v1 submitted 28 December, 2007; originally announced December 2007.

Comments: Submitted to Physica E. 11 pages, 2 figures. New references, figures and paragraphes, minor corrections

Terahertz Parametric Gain in Semiconductor Superlattices

Authors: Timo Hyart, Alexey V. Shorokhov, Kirill N. Alekseev

Abstract: We consider a high-frequency response of electrons in a single miniband of superlattice subject to dc and ac electric fields. Action of ac electric field causes oscillations of electron's effective mass in miniband, which result in a parametric resonance. We have established a theoretical feasibility of phase-sensitive parametric amplification at the resonance. The parametric amplification does… ▽ More We consider a high-frequency response of electrons in a single miniband of superlattice subject to dc and ac electric fields. Action of ac electric field causes oscillations of electron's effective mass in miniband, which result in a parametric resonance. We have established a theoretical feasibility of phase-sensitive parametric amplification at the resonance. The parametric amplification does not require operation in conditions of negative differential conductance. Therefore a formation of destructive domains of high electric field inside the superlattice can be prevented. Here we concentrate on the parametric up- and down-conversion of electromagnetic radiation from available frequencies to desirable THz frequency range. △ Less

Submitted 20 June, 2007; originally announced June 2007.

Comments: Submitted to Conference Digest of IRMMW-THz 2007 Cardiff, 2 pages, 3 figures

Journal ref: Conference Digest of the 2007 Joint 32nd International Conference on Infrared and Millimeter Waves, and 15th International Conference on Terahertz Electronics, Vol. 1, 472-473 (2007)

Theory of parametric amplification in in superlattices

Authors: Timo Hyart, Alexey V. Shorokhov, Kirill N. Alekseev

Abstract: We consider a high-frequency response of electrons in a single miniband of superlattice subject to dc and ac electric fields. We show that Bragg reflections in miniband result in a parametric resonance which is detectable using ac probe field. We establish theoretical feasibility of phase-sensitive THz amplification at the resonance. The parametric amplification does not require operation in con… ▽ More We consider a high-frequency response of electrons in a single miniband of superlattice subject to dc and ac electric fields. We show that Bragg reflections in miniband result in a parametric resonance which is detectable using ac probe field. We establish theoretical feasibility of phase-sensitive THz amplification at the resonance. The parametric amplification does not require operation in conditions of negative differential conductance. This prevents a formation of destructive high-field domains inside the superlattice. △ Less

Submitted 8 June, 2007; v1 submitted 18 December, 2006; originally announced December 2006.

Comments: 4 pages, 4 figures. V2: typo in axis caption of fig 2 is corrected. V3: typo in ref 9 is corrected, stylistic changes in the main text, new refs 18-21 are added, and change in the title

Journal ref: Phys. Rev. Lett. 98 (2007) 220404

Quantum derivatives and high-frequency gain in semiconductor superlattices

Authors: A. V. Shorokhov, K. N. Alekseev

Abstract: We derive simple difference formulas describing a small-signal absorption of THz field in a semiconductor superlattice driven by a microwave pump. We give a transparent geometric interpretation of these formulas that allows a search of optimum conditions for the gain employing only a simple qualitative analysis. Our theoretical approach provides a powerful tool for finding the correspondence bet… ▽ More We derive simple difference formulas describing a small-signal absorption of THz field in a semiconductor superlattice driven by a microwave pump. We give a transparent geometric interpretation of these formulas that allows a search of optimum conditions for the gain employing only a simple qualitative analysis. Our theoretical approach provides a powerful tool for finding the correspondence between quasistatic and dynamic regimes in ac-driven semiconductor superlattices. △ Less

Submitted 23 February, 2006; originally announced February 2006.

Comments: Submitted to proceedings of 4th Int. Symp. Nanostructures: Physics and Technology (St Petersburg, Russia, June 26-30, 2006). For detailed consideration see in cond-mat/0602209

High-frequency absorption and gain in superlattices: Semiquasistatic approach

Authors: A. V. Shorokhov, K. N. Alekseev

Abstract: We consider a generation and an amplification of THz radiation in semiconductor superlattices under the action of microwave pump field. Electrons belonging to a single miniband of the superlattice interact quasistatically with the pump field and dynamically with a signal THz field. Within this semiquasistic approach we derive elegant difference formulas describing absorption (gain) of the weak T… ▽ More We consider a generation and an amplification of THz radiation in semiconductor superlattices under the action of microwave pump field. Electrons belonging to a single miniband of the superlattice interact quasistatically with the pump field and dynamically with a signal THz field. Within this semiquasistic approach we derive elegant difference formulas describing absorption (gain) of the weak THz signal. We present an instructive geometric interpretation of the absorption formulas which allows a search of optimum conditions for the gain employing only a simple qualitative analysis. Our theoretical findings contribute to the development of sources and detectors of THz radiation that are using nonlinear electric properties of semiconductor superlattices. △ Less

Submitted 8 February, 2006; originally announced February 2006.

Comments: 28 pages, 11 figures, submitted to Physica E

Journal ref: Physica E 33 (2006) 284-295

Suppressed absolute negative conductance and generation of high-frequency radiation in semiconductor superlattices

Authors: Kirill N. Alekseev, Maxim V. Gorkunov, Natalia V. Demarina, Timo Hyart, Natalia V. Alexeeva, Aleksey V. Shorokhov

Abstract: We show that space-charge instabilities (electric field domains) in semiconductor superlattices are the attribute of absolute negative conductance induced by small constant and large alternating electric fields. We propose the efficient method for suppression of this destructive phenomenon in order to obtain a generation at microwave and THz frequencies in devices operating at room temperature.… ▽ More We show that space-charge instabilities (electric field domains) in semiconductor superlattices are the attribute of absolute negative conductance induced by small constant and large alternating electric fields. We propose the efficient method for suppression of this destructive phenomenon in order to obtain a generation at microwave and THz frequencies in devices operating at room temperature. We theoretically proved that an unbiased superlattice with a moderate do** subjected to a microwave pump field provides a strong gain at third, fifth, seventh, etc. harmonics of the pump frequency in the conditions of suppressed domains. △ Less

Submitted 24 April, 2006; v1 submitted 3 January, 2006; originally announced January 2006.

Comments: 8 pages. Development of cond-mat/0503216 . Version 2: Final version, erratum is included

Journal ref: Europhysics Letters 73 (2006) 934-940; Erratum: 74 (2006) 567

Geometrical phase for a three-dimensional anisotropic quantum well

Authors: V. A. Geyler, A. V. Shorokhov

Abstract: A three-dimensional anisotropic quantum well placed in an adiabatically precessing uniform magnetic field is considered and an explicit formula for the Berry phase is obtained. To get the Berry phase, a purely algebraic algorithm of reducing a quadratic Hamiltonian to the canonical form via symplectic transformations of the phase space is presented. A three-dimensional anisotropic quantum well placed in an adiabatically precessing uniform magnetic field is considered and an explicit formula for the Berry phase is obtained. To get the Berry phase, a purely algebraic algorithm of reducing a quadratic Hamiltonian to the canonical form via symplectic transformations of the phase space is presented. △ Less

Submitted 30 September, 2004; originally announced September 2004.

Comments: 14 pages, no figures