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A Probabilistic Sha** Approach for Optical Region-of-Interest Signaling
Authors:
Duc-Phuc Nguyen,
Yoshifumi Shiraki,
Jun Muramatsu,
Takehiro Moriya
Abstract:
We propose a probabilistic sha** approach for region-of-interest signaling, where a low-rate signal controls the desired probabilistic ranges of a high-rate data stream using a flexible distribution controller. In addition, we introduce run-length-aware values for frozen bit indices in systematic polar code to minimize the run-length without using run-length-limited code. Our compact system can…
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We propose a probabilistic sha** approach for region-of-interest signaling, where a low-rate signal controls the desired probabilistic ranges of a high-rate data stream using a flexible distribution controller. In addition, we introduce run-length-aware values for frozen bit indices in systematic polar code to minimize the run-length without using run-length-limited code. Our compact system can support soft-decision forward-error-correction decoding with excellent spectral efficiency compared with related work based on hybrid modulation schemes.
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Submitted 1 September, 2022;
originally announced September 2022.
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Design and Development of a Robotic Vehicle for Shallow-Water Marine Inspections
Authors:
Parag Tarwadi,
Yuta Shiraki,
Ori Ganoni,
Shanghai Wei,
Ho Seok Ahn,
Bruce MacDonald
Abstract:
Underwater marine inspections for ship hull or marine debris, etc. are one of the vital measures carried out to ensure the safety of marine structures and underwater species. This work details the design, development and qualification of a compact and economical observation class Remotely Operated Vehicle (ROV) prototype, intended for carrying out scientific research in shallow-waters. The ROV has…
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Underwater marine inspections for ship hull or marine debris, etc. are one of the vital measures carried out to ensure the safety of marine structures and underwater species. This work details the design, development and qualification of a compact and economical observation class Remotely Operated Vehicle (ROV) prototype, intended for carrying out scientific research in shallow-waters. The ROV has a real-time processor and controller onboard, which synchronizes the movement of the vehicle based on the commands from the surface station. The vehicle piloting is done using the onboard Raspberry pi camera and the support of some navigation sensors like Global Positioning System (GPS), inertial, temperature, depth and pressure. This prototype of ROV is a compact unit built using a limited number of components and is suitable for underwater inspection using a single camera. The developed ROV is initially tested in a pool.
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Submitted 9 July, 2020;
originally announced July 2020.
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Randomness and optimality in enhanced DNA ligation with crowding effects
Authors:
Takaharu Y. Shiraki,
Ken-ichiro Kamei,
Yusuke T. Maeda
Abstract:
Enzymatic ligation is essential for the synthesis of long DNA. However, the number of ligated products exponentially decays as the DNA synthesis proceeds in a random manner. The controlling of ligation randomness is of importance to suppress exponential decay and demonstrate an efficient synthesis of long DNA. Here, we report the analysis of randomness in sequential DNA ligations, named qPCR-based…
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Enzymatic ligation is essential for the synthesis of long DNA. However, the number of ligated products exponentially decays as the DNA synthesis proceeds in a random manner. The controlling of ligation randomness is of importance to suppress exponential decay and demonstrate an efficient synthesis of long DNA. Here, we report the analysis of randomness in sequential DNA ligations, named qPCR-based STatistical Analysis of Randomness (qPCR-bSTAR), by a probability distribution of ligated DNA concentration. We show that the exponential decay is suppressed in a solution of another polymer and DNA ligation is activated at an optimal crowded condition. Theoretical model of kinetic ligation explains that intermolecular attraction due to molecular crowding can be involved in the optimal balance of the ligation speed and the available ligase. Our finding indicates that crowding effects enhance the synthesis of long DNA that retains large genetic information.
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Submitted 7 December, 2019;
originally announced December 2019.
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Cubic Rashba spin-orbit interaction of two-dimensional hole gas in strained-Ge/SiGe quantum well
Authors:
Rai Moriya,
Kentarou Sawano,
Yusuke Hoshi,
Satoru Masubuchi,
Yasuhiro Shiraki,
Andreas Wild,
Christian Neumann,
Gerhard Abstreiter,
Dominique Bougeard,
Takaaki Koga,
Tomoki Machida
Abstract:
The spin-orbit interaction (SOI) of the two-dimensional hole gas in the inversion symmetric semiconductor Ge is studied in a strained-Ge/SiGe quantum well structure. We observed weak anti-localization (WAL) in the magnetoconductivity measurement, revealing that the WAL feature can be fully described by the k-cubic Rashba SOI theory. Furthermore, we demonstrated electric field control of the Rashba…
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The spin-orbit interaction (SOI) of the two-dimensional hole gas in the inversion symmetric semiconductor Ge is studied in a strained-Ge/SiGe quantum well structure. We observed weak anti-localization (WAL) in the magnetoconductivity measurement, revealing that the WAL feature can be fully described by the k-cubic Rashba SOI theory. Furthermore, we demonstrated electric field control of the Rashba SOI. Our findings reveal that the heavy hole (HH) in strained-Ge is a purely cubic-Rashba-system, which is consistent with the spin angular momentum mj = +-3/2 nature of the HH wave function.
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Submitted 7 August, 2014; v1 submitted 5 August, 2014;
originally announced August 2014.
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Charge-noise-free Lateral Quantum Dot Devices with Undoped Si/SiGe Wafer
Authors:
T. Obata,
K. Takeda,
J. Kamioka,
T. Kodera,
W. M. Akhtar,
K. Sawano,
S. Oda,
Y. Shiraki,
S. Tarucha
Abstract:
We develop quantum dots in a single layered MOS structure using an undoped Si/SiGe wafer. By applying a positive bias on the surface gates, electrons are accumulated in the Si channel. Clear Coulomb diamond and double dot charge stability diagrams are measured. The temporal fluctuation of the current is traced, to which we apply the Fourier transform analysis. The power spectrum of the noise signa…
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We develop quantum dots in a single layered MOS structure using an undoped Si/SiGe wafer. By applying a positive bias on the surface gates, electrons are accumulated in the Si channel. Clear Coulomb diamond and double dot charge stability diagrams are measured. The temporal fluctuation of the current is traced, to which we apply the Fourier transform analysis. The power spectrum of the noise signal is inversely proportional to the frequency, and is different from the inversely quadratic behavior known for quantum dots made in doped wafers. Our results indicate that the source of charge noise for the doped wafers is related to the 2DEG dopant.
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Submitted 12 November, 2013;
originally announced November 2013.
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In-plane magnetic field dependence of cyclotron relaxation time in a Si two-dimensional electron system
Authors:
Tasuku Chiba,
Ryuichi Masutomi,
Kentarou Sawano,
Yasuhiro Shiraki,
Tohru Okamoto
Abstract:
Cyclotron resonance of two-dimensional electrons is studied for a high-mobility Si/SiGe quantum well in the presence of an in-plane magnetic field, which induces spin polarization. The relaxation time $τ_{CR}$ shows a negative in-plane magnetic field dependence, which is similar to that of the transport scattering time $τ_t$ obtained from dc resistivity. The resonance magnetic field shows an unexp…
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Cyclotron resonance of two-dimensional electrons is studied for a high-mobility Si/SiGe quantum well in the presence of an in-plane magnetic field, which induces spin polarization. The relaxation time $τ_{CR}$ shows a negative in-plane magnetic field dependence, which is similar to that of the transport scattering time $τ_t$ obtained from dc resistivity. The resonance magnetic field shows an unexpected negative shift with increasing in-plane magnetic field.
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Submitted 10 July, 2013;
originally announced July 2013.
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Observation of new microsecond isomers among fission products of 345 MeV/nucleon 238U
Authors:
D. Kameda,
T. Kubo,
T. Ohnishi,
K. Kusaka,
A. Yoshida,
K. Yoshida,
M. Ohtake,
N. Fukuda,
H. Takeda,
K. Tanaka,
N. Inabe,
Y. Yanagisawa,
Y. Gono,
H. Watanabe,
H. Otsu,
H. Baba,
T. Ichihara,
Y. Yamaguchi,
M. Takechi,
S. Nishimura,
H. Ueno,
A. Yoshimi,
H. Sakurai,
T. Motobayashi,
T. Nakao
, et al. (35 additional authors not shown)
Abstract:
A search for isomeric gamma-decays among fission fragments from 345 MeV/nucleon 238U has been performed at the RIKEN Nishina Center RI Beam Factory. Fission fragments were selected and identified using the superconducting in-flight separator BigRIPS and were implanted in an aluminum stopper. Delayed gamma-rays were detected using three clover-type high-purity germanium detectors located at the foc…
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A search for isomeric gamma-decays among fission fragments from 345 MeV/nucleon 238U has been performed at the RIKEN Nishina Center RI Beam Factory. Fission fragments were selected and identified using the superconducting in-flight separator BigRIPS and were implanted in an aluminum stopper. Delayed gamma-rays were detected using three clover-type high-purity germanium detectors located at the focal plane within a time window of 20 microseconds following the implantation. We identified a total of 54 microsecond isomers with half-lives of ~0.1 - 10 microseconds, including discovery of 18 new isomers in very neutron-rich nuclei: 59Tim, 90Asm, 92Sem, 93Sem, 94Brm, 95Brm, 96Brm, 97Rbm, 108Nbm, 109Mom, 117Rum, 119Rum, 120Rhm, 122Rhm, 121Pdm, 124Pdm, 124Agm and 126Agm, and obtained a wealth of spectroscopic information such as half-lives, gamma-ray energies, gamma-ray relative intensities and gamma-gamma coincidences over a wide range of neutron-rich exotic nuclei. Proposed level schemes are presented for 59Tim, 82Gam, 92Brm, 94Brm, 95Brm, 97Rbm, 98Rbm, 108Nbm, 108Zrm, 109Mom, 117Rum, 119Rum, 120Rhm, 122Rhm, 121Pdm, 124Agm and 125Agm, based on the obtained spectroscopic information and the systematics in neighboring nuclei. Nature of the nuclear isomerism is discussed in relation to evolution of nuclear structure.
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Submitted 8 November, 2012;
originally announced November 2012.
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Metallic Behavior of Cyclotron Relaxation Time in Two-Dimensional Systems
Authors:
Ryuichi Masutomi,
Kohei Sasaki,
Ippei Yasuda,
Akihito Sekine,
Kentarou Sawano,
Yasuhiro Shiraki,
Tohru Okamoto
Abstract:
Cyclotron resonance of two-dimensional electrons is studied at low temperatures down to 0.4 K for a high-mobility Si/SiGe quantum well which exhibits a metallic temperature dependence of dc resistivity $ρ$. The relaxation time $τ_{\rm CR}$ shows a negative temperature dependence, which is similar to that of the transport scattering time $τ_t$ obtained from $ρ$. The ratio $τ_{\rm CR}/τ_t$ at 0.4 K…
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Cyclotron resonance of two-dimensional electrons is studied at low temperatures down to 0.4 K for a high-mobility Si/SiGe quantum well which exhibits a metallic temperature dependence of dc resistivity $ρ$. The relaxation time $τ_{\rm CR}$ shows a negative temperature dependence, which is similar to that of the transport scattering time $τ_t$ obtained from $ρ$. The ratio $τ_{\rm CR}/τ_t$ at 0.4 K increases as the electron density $N_s$ decreases, and exceeds unity when $N_s$ approaches the critical density for the metal-insulator transition.
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Submitted 24 May, 2011;
originally announced May 2011.
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Identification of 45 New Neutron-Rich Isotopes Produced by In-Flight Fission of a 238U Beam at 345 MeV/nucleon
Authors:
Tetsuya Ohnishi,
Toshiyuki Kubo*,
Kensuke Kusaka,
Atsushi Yoshida,
Koichi Yoshida,
Masao Ohtake,
Naoki Fukuda,
Hiroyuki Takeda,
Daisuke Kameda,
Kanenobu Tanaka,
Naohito Inabe,
Yoshiyuki Yanagisawa,
Yasuyuki Gono,
Hiroshi Watanabe,
Hideaki Otsu,
Hidetada Baba,
Takashi Ichihara,
Yoshitaka Yamaguchi,
Maya Takechi,
Shunji Nishimura,
Hideki Ueno,
Akihiro Yoshimi,
Hiroyoshi Sakurai,
Tohru Motobayashi,
Taro Nakao
, et al. (35 additional authors not shown)
Abstract:
A search for new isotopes using in-flight fission of a 345 MeV/nucleon 238U beam has been carried out at the RI Beam Factory at the RIKEN Nishina Center. Fission fragments were analyzed and identified by using the superconducting in-flight separator BigRIPS. We observed 45 new neutron-rich isotopes: 71Mn, 73,74Fe, 76Co, 79Ni, 81,82Cu, 84,85Zn, 87Ga, 90Ge, 95Se, 98Br, 101Kr, 103Rb, 106,107Sr, 108,1…
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A search for new isotopes using in-flight fission of a 345 MeV/nucleon 238U beam has been carried out at the RI Beam Factory at the RIKEN Nishina Center. Fission fragments were analyzed and identified by using the superconducting in-flight separator BigRIPS. We observed 45 new neutron-rich isotopes: 71Mn, 73,74Fe, 76Co, 79Ni, 81,82Cu, 84,85Zn, 87Ga, 90Ge, 95Se, 98Br, 101Kr, 103Rb, 106,107Sr, 108,109Y, 111,112Zr, 114,115Nb, 115,116,117Mo, 119,120Tc, 121,122,123,124Ru, 123,124,125,126Rh, 127,128Pd, 133Cd, 138Sn, 140Sb, 143Te, 145I, 148Xe, and 152Ba.
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Submitted 2 June, 2010;
originally announced June 2010.
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Cavity analysis on the robustness of random networks against targeted attacks: Influences of degree-degree correlations
Authors:
Yoshifumi Shiraki,
Yoshiyuki Kabashima
Abstract:
We developed a scheme for evaluating the size of the largest connected subnetwork (giant component) in random networks and the percolation threshold when sites (nodes) and/or bonds (edges) are removed from the networks based on the cavity method of statistical mechanics of disordered systems. An advantage of our scheme is the capability of handling targeted attacks on sites/bonds in the presence o…
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We developed a scheme for evaluating the size of the largest connected subnetwork (giant component) in random networks and the percolation threshold when sites (nodes) and/or bonds (edges) are removed from the networks based on the cavity method of statistical mechanics of disordered systems. An advantage of our scheme is the capability of handling targeted attacks on sites/bonds in the presence of degree correlations beyond naive analyses on random failures (crashes) in networks of no degree correlations. We apply our scheme particularly to random networks of bimodal degree distribution (two-peak networks), which have been proposed in earlier studies as robust networks against random failures of site and/or targeted attacks on sites, and show that the correlations among degrees affect a network's robustness against targeted attacks on sites or bonds non-trivially depending on details of network configurations.
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Submitted 17 October, 2010; v1 submitted 26 February, 2010;
originally announced February 2010.
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Excitonic Aharonov-Bohm Effect in Isotopically Pure 70Ge/Si Type-II Quantum Dots
Authors:
Satoru Miyamoto,
Oussama Moutanabbir,
Toyofumi Ishikawa,
Mikio Eto,
Eugene E. Haller,
Kentarou Sawano,
Yasuhiro Shiraki,
Kohei M. Itoh
Abstract:
We report on a magneto-photoluminescence study of isotopically pure 70Ge/Si self-assembled type-II quantum dots. Oscillatory behaviors attributed to the Aharonov-Bohm effect are simultaneously observed for the emission energy and intensity of excitons subject to an increasing magnetic field. When the magnetic flux penetrates through the ring-like trajectory of an electron moving around each quan…
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We report on a magneto-photoluminescence study of isotopically pure 70Ge/Si self-assembled type-II quantum dots. Oscillatory behaviors attributed to the Aharonov-Bohm effect are simultaneously observed for the emission energy and intensity of excitons subject to an increasing magnetic field. When the magnetic flux penetrates through the ring-like trajectory of an electron moving around each quantum dot, the ground state of an exciton experiences a change in its angular momentum. Our results provide the experimental evidence for the phase coherence of a localized electron wave function in group-IV Ge/Si self-assembled quantum structures.
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Submitted 11 February, 2010;
originally announced February 2010.
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Well-width dependence of valley splitting in Si/SiGe quantum wells
Authors:
Kohei Sasaki,
Ryuichi Masutomi,
Kiyohiko Toyama,
Kentarou Sawano,
Yasuhiro Shiraki,
Tohru Okamoto
Abstract:
The valley splitting in Si two-dimensional electron systems is studied using Si/SiGe single quantum wells (QWs) with different well widths. The energy gaps for 4 and 5.3 nm QWs, obtained from the temperature dependence of the longitudinal resistivity at the Landau level filling factor $ν=1$, are much larger than those for 10 and 20 nm QWs. This is consistent with the well-width dependence of the…
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The valley splitting in Si two-dimensional electron systems is studied using Si/SiGe single quantum wells (QWs) with different well widths. The energy gaps for 4 and 5.3 nm QWs, obtained from the temperature dependence of the longitudinal resistivity at the Landau level filling factor $ν=1$, are much larger than those for 10 and 20 nm QWs. This is consistent with the well-width dependence of the bare valley splitting estimated from the comparison with the Zeeman splitting in the Shubnikov-de Haas oscillations.
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Submitted 3 December, 2009; v1 submitted 10 November, 2009;
originally announced November 2009.
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Electrical Detection and Magnetic-Field Control of Spin States in Phosphorus-Doped Silicon
Authors:
H. Morishita,
L. S. Vlasenko,
H. Tanaka,
K. Semba,
K. Sawano,
Y. Shiraki,
M. Eto,
K. M. Itoh
Abstract:
Electron paramagnetic resonance of ensembles of phosphorus donors in silicon has been detected electrically with externally applied magnetic fields lower than 200 G. Because the spin Hamiltonian was dominated by the contact hyperfine term rather than by the Zeeman terms at such low magnetic fields, superposition states $ α| \uparrow \downarrow >+β| \downarrow \uparrow >$ and…
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Electron paramagnetic resonance of ensembles of phosphorus donors in silicon has been detected electrically with externally applied magnetic fields lower than 200 G. Because the spin Hamiltonian was dominated by the contact hyperfine term rather than by the Zeeman terms at such low magnetic fields, superposition states $ α| \uparrow \downarrow >+β| \downarrow \uparrow >$ and $-β| \uparrow \downarrow > + α| \downarrow \uparrow >$ were formed between phosphorus electron and nuclear spins, and electron paramagnetic resonance transitions between these superposition states and $| \uparrow \uparrow >$ or $| \downarrow \downarrow >$ states are observed clearly. A continuous change of $α$ and $β$ with the magnetic field was observed with a behavior fully consistent with theory of phosphorus donors in silicon.
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Submitted 28 October, 2009; v1 submitted 6 July, 2009;
originally announced July 2009.
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Insulating Phases Induced by Crossing of Partially Filled Landau Levels in a Si Quantum Well
Authors:
Tohru Okamoto,
Kohei Sasaki,
Kiyohiko Toyama,
Ryuichi Masutomi,
Kentarou Sawano,
Yasuhiro Shiraki
Abstract:
We study magnetotransport in a high mobility Si two-dimensional electron system by in situ tilting of the sample relative to the magnetic field. A pronounced dip in the longitudinal resistivity is observed during the Landau level crossing process for noninteger filling factors. Together with a Hall resistivity change which exhibits the particle-hole symmetry, this indicates that electrons or hol…
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We study magnetotransport in a high mobility Si two-dimensional electron system by in situ tilting of the sample relative to the magnetic field. A pronounced dip in the longitudinal resistivity is observed during the Landau level crossing process for noninteger filling factors. Together with a Hall resistivity change which exhibits the particle-hole symmetry, this indicates that electrons or holes in the relevant Landau levels become localized at the coincidence where the pseudospin-unpolarized state is expected to be stable.
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Submitted 3 June, 2009; v1 submitted 3 March, 2009;
originally announced March 2009.
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Electronic Transport Properties of the Ising Quantum Hall Ferromagnet in a Si Quantum Well
Authors:
Kiyohiko Toyama,
Takahisa Nishioka,
Kentarou Sawano,
Yasuhiro Shiraki,
Tohru Okamoto
Abstract:
Magnetotransport properties are investigated for a high mobility Si two dimensional electron systems in the vicinity of a Landau level crossing point. At low temperatures, the resistance peak having a strong anisotropy shows large hysteresis which is attributed to Ising quantum Hall ferromagnetism. The peak is split into two peaks in the paramagnetic regime. A mean field calculation for the peak…
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Magnetotransport properties are investigated for a high mobility Si two dimensional electron systems in the vicinity of a Landau level crossing point. At low temperatures, the resistance peak having a strong anisotropy shows large hysteresis which is attributed to Ising quantum Hall ferromagnetism. The peak is split into two peaks in the paramagnetic regime. A mean field calculation for the peak positions indicates that electron scattering is strong when the pseudospin is partially polarized. We also study the current-voltage characteristics which exhibit a wide voltage plateau.
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Submitted 2 July, 2008; v1 submitted 26 February, 2008;
originally announced February 2008.
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Spin-dependent edge-channel transport in a Si/SiGe quantum Hall system
Authors:
K. Hamaya,
S. Masubuchi,
K. Hirakawa,
S. Ishida,
Y. Arakawa,
K. Sawano,
Y. Shiraki,
T. Machida
Abstract:
We study the edge-channel transport of electrons in a high-mobility Si/SiGe two-dimensional electron system in the quantum Hall regime. By selectively populating the spin-resolved edge channels, we observe suppression of the scattering between two edge channels with spin-up and spin-down. In contrast, when the Zeeman splitting of the spin-resolved levels is enlarged with tilting magnetic field d…
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We study the edge-channel transport of electrons in a high-mobility Si/SiGe two-dimensional electron system in the quantum Hall regime. By selectively populating the spin-resolved edge channels, we observe suppression of the scattering between two edge channels with spin-up and spin-down. In contrast, when the Zeeman splitting of the spin-resolved levels is enlarged with tilting magnetic field direction, the spin orientations of both the relevant edge channels are switched to spin-down, and the inter-edge-channel scattering is strongly promoted. The evident spin dependence of the adiabatic edge-channel transport is an individual feature in silicon-based two-dimensional electron systems, originating from a weak spin-orbit interaction.
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Submitted 16 March, 2006;
originally announced March 2006.
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Metal-Insulator Transition and Spin Degree of Freedom in Silicon 2D Electron Systems
Authors:
Tohru Okamoto,
K. Hosoya,
S. Kawaji,
A. Yagi,
A. Yutani,
Y. Shiraki
Abstract:
Magnetotransport in 2DES's formed in Si-MOSFET's and Si/SiGe quantum wells at low temperatures is reported. Metallic temperature dependence of resistivity is observed for the n-Si/SiGe sample even in a parallel magnetic field of 9T, where the spins of electrons are expected to be polarized completely. Correlation between the spin polarization and minima in the diagonal resistivity observed by ro…
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Magnetotransport in 2DES's formed in Si-MOSFET's and Si/SiGe quantum wells at low temperatures is reported. Metallic temperature dependence of resistivity is observed for the n-Si/SiGe sample even in a parallel magnetic field of 9T, where the spins of electrons are expected to be polarized completely. Correlation between the spin polarization and minima in the diagonal resistivity observed by rotating the samples for various total strength of the magnetic field is also investigated.
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Submitted 29 June, 1999;
originally announced June 1999.
