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Non-coplanar spin structure in a metallic thin film of triangular lattice antiferromagnet CrSe
Authors:
Yusuke Tajima,
Junichi Shiogai,
Kohei Ueda,
Hirotake Suzaki,
Kensuke Takaki,
Takeshi Seki,
Kazutaka Kudo,
Jobu Matsuno
Abstract:
An antiferromagnetic metal with two-dimensional triangular network offers a unique playground of intriguing magneto-transport properties and functionalities stemming from interplay between conducting electrons and intricate magnetic phases. A NiAs-type CrSe is one of the candidates owing to alternate stackings of Cr and Se triangular atomic networks in its crystal structure. While fabrication of C…
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An antiferromagnetic metal with two-dimensional triangular network offers a unique playground of intriguing magneto-transport properties and functionalities stemming from interplay between conducting electrons and intricate magnetic phases. A NiAs-type CrSe is one of the candidates owing to alternate stackings of Cr and Se triangular atomic networks in its crystal structure. While fabrication of CrSe thin films is indispensable to develop functional devices, studies on its thin-film properties have been limited to date due to the lack of metallic samples. Here, we report on realization of metallic conductivities of CrSe thin films, which allows to investigate their intrinsic magneto-transport properties. The metallic sample exhibits co-occurrence of a weak ferromagnetism with perpendicular magnetic anisotropy and the antiferromagnetic behavior, indicating the presence of non-coplanar spin structures. In addition, control of polarity and tilting angle of the non-coplanar spin structure is accomplished by a sign of cooling magnetic fields. The observed non-coplanar spin structure, which can be a source of emergent magnetic field acting on the conducting electrons, highlights a high potential of the triangular lattice antiferromagnet and provide unique platform for functional thin-film devices composed of NiAs-type derivative Cr chalcogenides and pnictides.
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Submitted 26 March, 2024;
originally announced March 2024.
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Impact of epitaxial strain relaxation on ferromagnetism in a freestanding La2/3Sr1/3MnO3 membrane
Authors:
Ryuji Atsumi,
Junichi Shiogai,
Takumi Yamazaki,
Takeshi Seki,
Kohei Ueda,
Jobu Matsuno
Abstract:
Manganite perovskites host emerging physical properties of strongly-correlated electrons with charge, spin, and lattice degrees of freedom. Using epitaxial lift-off technique, we report enhancement of saturation magnetization and ferromagnetic transition temperature of the freestanding La2/3Sr1/3MnO3 membrane compared with the as-grown film on SrTiO3 substrate involving lateral tensile strain. Str…
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Manganite perovskites host emerging physical properties of strongly-correlated electrons with charge, spin, and lattice degrees of freedom. Using epitaxial lift-off technique, we report enhancement of saturation magnetization and ferromagnetic transition temperature of the freestanding La2/3Sr1/3MnO3 membrane compared with the as-grown film on SrTiO3 substrate involving lateral tensile strain. Structural analysis reveals shrinkage of unit-cell volume by tensile strain relaxation in the freestanding membrane, which causes enhancement of the ferromagnetic interaction. The impact of the microscopic lattice deformation on the ferromagnetism of La2/3Sr1/3MnO3 indicates a high potential of this material for flexible electronics application with intriguing functionalities in strongly-correlated electron systems.
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Submitted 30 August, 2023;
originally announced August 2023.
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Two-dimensionality of metallic surface conduction in Co3Sn2S2 thin films
Authors:
Junya Ikeda,
Kohei Fujiwara,
Junichi Shiogai,
Takeshi Seki,
Kentaro Nomura,
Koki Takanashi,
Atsushi Tsukazaki
Abstract:
Two-dimensional (2D) surface of the topological materials is an attractive channel for the electrical conduction reflecting the linearly-dispersive electronic bands. By applying a reliable systematic thickness t dependent measurement of sheet conductance, here we elucidate the dimensionality of the electrical conduction paths of a Weyl semimetal Co3Sn2S2. Under the ferromagnetic phase, the 2D cond…
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Two-dimensional (2D) surface of the topological materials is an attractive channel for the electrical conduction reflecting the linearly-dispersive electronic bands. By applying a reliable systematic thickness t dependent measurement of sheet conductance, here we elucidate the dimensionality of the electrical conduction paths of a Weyl semimetal Co3Sn2S2. Under the ferromagnetic phase, the 2D conduction path clearly emerges in Co3Sn2S2 thin films, indicating a formation of the Fermi arcs projected from Weyl nodes. Comparison between 3D conductivity and 2D conductance provides the effective thickness of the surface conducting region being estimated to be approximately 20 nm, which is rather thicker than 5 nm in topological insulator Bi2Se3. This large value may come from the narrow gap at Weyl point and relatively weak spin-orbit interaction of the Co3Sn2S2. The emergent surface conduction will provide a pathway to activate quantum and spintronic transport features stemming from a Weyl node in thin-film-based devices.
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Submitted 3 June, 2021;
originally announced June 2021.
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Signature of band inversion in the perovskite thin-film alloys BaSn$_{1-x}$Pb$_x$O$_3$
Authors:
Junichi Shiogai,
Takumaru Chida,
Kenichiro Hashimoto,
Kohei Fujiwara,
Takahiko Sasaki,
Atsushi Tsukazaki
Abstract:
Perovskite oxides ABO$_3$ containing heavy B-site elements are a class of candidate materials to host topological metals with a large spin-orbit interaction. In contrast to the band insulator BaSnO$_3$, the semimetal BaPbO$_3$ is proposed to be a typical example with an inverted band structure, the conduction band of which is composed of mainly the O-2p orbital. In this study, we exemplify a band-…
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Perovskite oxides ABO$_3$ containing heavy B-site elements are a class of candidate materials to host topological metals with a large spin-orbit interaction. In contrast to the band insulator BaSnO$_3$, the semimetal BaPbO$_3$ is proposed to be a typical example with an inverted band structure, the conduction band of which is composed of mainly the O-2p orbital. In this study, we exemplify a band-gap modification by systematic structural, optical, and transport measurements in BaSn$_{1-x}$Pb$_x$O$_3$ films. A sudden suppression of the conductivity and an enhancement of the weak antilocalization effect at $x$ = 0.9 indicate the presence of a singular point in the electronic structure as a signature of the band inversion. Our findings provide an intriguing platform for combining topological aspects and electron correlation in perovskite oxides based on band-gap engineering.
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Submitted 16 March, 2020;
originally announced March 2020.
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Magnetic-field-induced topological phase transition in Fe-doped (Bi,Sb)$_2$Se$_3$ heterostructures
Authors:
Y. Satake,
J. Shiogai,
G. P. Mazur,
S. Kimura,
S. Awaji,
K. Fujiwara,
T. Nojima,
K. Nomura,
S. Souma,
T. Sato,
T. Dietl,
A. Tsukazaki
Abstract:
Three-dimensional topological insulators (3D-TIs) possess a specific topological order of electronic bands, resulting in gapless surface states via bulk-edge correspondence. Exotic phenomena have been realized in ferromagnetic TIs, such as the quantum anomalous Hall (QAH) effect with a chiral edge conduction and a quantized value of the Hall resistance ${R_{yx}}$. Here, we report on the emergence…
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Three-dimensional topological insulators (3D-TIs) possess a specific topological order of electronic bands, resulting in gapless surface states via bulk-edge correspondence. Exotic phenomena have been realized in ferromagnetic TIs, such as the quantum anomalous Hall (QAH) effect with a chiral edge conduction and a quantized value of the Hall resistance ${R_{yx}}$. Here, we report on the emergence of distinct topological phases in paramagnetic Fe-doped (Bi,Sb)${_2}$Se${_3}$ heterostructures with varying structure architecture, do**, and magnetic and electric fields. Starting from a 3D-TI, a two-dimensional insulator appears at layer thicknesses below a critical value, which turns into an Anderson insulator for Fe concentrations sufficiently large to produce localization by magnetic disorder. With applying a magnetic field, a topological transition from the Anderson insulator to the QAH state occurs, which is driven by the formation of an exchange gap owing to a giant Zeeman splitting and reduced magnetic disorder. Topological phase diagram of (Bi,Sb)${_2}$Se${_3}$ allows exploration of intricate interplay of topological protection, magnetic disorder, and exchange splitting.
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Submitted 21 February, 2020;
originally announced February 2020.
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Ordering phenomena of spin trimers accompanied by large geometrical Hall effect
Authors:
Shang Gao,
Max Hirschberger,
Oksana Zaharko,
Taro Nakajima,
Takashi Kurumaji,
Akiko Kikkawa,
Junichi Shiogai,
Atsushi Tsukazaki,
Shojiro Kimura,
Satoshi Awaji,
Yasujiro Taguchi,
Taka-hisa Arima,
Yoshinori Tokura
Abstract:
The wavefuntion of conduction electrons moving in the background of a non-coplanar spin structure can gain a quantal phase - Berry phase - as if the electrons were moving in a strong fictitious magnetic field. Such an emergent magnetic field effect is approximately proportional to the solid angle subtended by the spin moments on three neighbouring spin sites, termed the scalar spin chirality. The…
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The wavefuntion of conduction electrons moving in the background of a non-coplanar spin structure can gain a quantal phase - Berry phase - as if the electrons were moving in a strong fictitious magnetic field. Such an emergent magnetic field effect is approximately proportional to the solid angle subtended by the spin moments on three neighbouring spin sites, termed the scalar spin chirality. The entire spin chirality of the crystal, unless macroscopically canceled, causes the geometrical Hall effect of real-space Berry-phase origin, whereas the intrinsic anomalous Hall effect (AHE) in a conventional metallic ferromagnet is of the momentum-space Berry-phase origin induced by relativistic spin-orbit coupling (SOC). Here, we report the ordering phenomena of the spin-trimer scalar spin chirality and the consequent large geometrical Hall effect in the breathing kagomé lattice compound Dy$_3$Ru$_4$Al$_{12}$, where the Dy$^{3+}$ moments form non-coplanar spin trimers with local spin chirality. Using neutron diffraction, we show that the local spin chirality of the spin trimers as well as its ferroic/antiferroic orders can be switched by an external magnetic field, accompanying large changes in the geometrical Hall effect. Our finding reveals that systems composed of tunable spin trimers can be a fertile field to explore large emergent electromagnetic responses arising from real-space topological magnetic orders.
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Submitted 21 August, 2019;
originally announced August 2019.
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Fe-Sn nanocrystalline films for flexible magnetic sensors with high thermal stability
Authors:
Y. Satake,
K. Fujiwara,
J. Shiogai,
T. Seki,
A. Tsukazaki
Abstract:
The interplay of magnetism and spin-orbit coupling on an Fe kagome lattice in Fe3Sn2 crystal produces a unique band structure leading to an order of magnitude larger anomalous Hall effect than in conventional ferromagnetic metals. In this work, we demonstrate that Fe-Sn nanocrystalline films also exhibit a large anomalous Hall effect, being applicable to magnetic sensors that satisfy both high sen…
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The interplay of magnetism and spin-orbit coupling on an Fe kagome lattice in Fe3Sn2 crystal produces a unique band structure leading to an order of magnitude larger anomalous Hall effect than in conventional ferromagnetic metals. In this work, we demonstrate that Fe-Sn nanocrystalline films also exhibit a large anomalous Hall effect, being applicable to magnetic sensors that satisfy both high sensitivity and thermal stability. In the films prepared by a co-sputtering technique at room temperature, the partial development of crystalline lattice order appears as nanocrystals of Fe-Sn kagome layer. The tangent Hall angle, the ratio of Hall resistivity to longitudinal resistivity, is largely enhanced in the optimal alloy composition of close to Fe3Sn2, exemplifying the kagome origin even though the films are composed of nanocrystal and amorphous-like domains. These ferromagnetic Fe-Sn films possess great advantages as a Hall sensor over semiconductors in thermal stability owing to the weak temperature dependence of the anomalous Hall responses. Moreover, the room-temperature fabrication enables us to develop a mechanically flexible Hall sensor on an organic substrate. These demonstrations manifest the potential of kagome metal as an untapped reservoir for designing new functional devices.
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Submitted 6 March, 2019;
originally announced March 2019.
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Fabrication of tetragonal FeSe - FeS alloy films with high sulfur contents by alternate deposition
Authors:
Kohei Fujiwara,
Junichi Shiogai,
Atsushi Tsukazaki
Abstract:
We report the synthesis of tetragonal $\mathrm{FeS}_x\mathrm{Se}_{1-x}$ films ($x \leq 0.78$) by pulsed-laser deposition. To fabricate the tetragonal alloy films with tetragonal FeSe and hexagonal FeS targets, we adopted an alternate deposition technique with FeSe buffer layer on MgO(001). The overall film composition is controlled by the thickness ratio of FeS / FeSe layers. The out-of-plane latt…
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We report the synthesis of tetragonal $\mathrm{FeS}_x\mathrm{Se}_{1-x}$ films ($x \leq 0.78$) by pulsed-laser deposition. To fabricate the tetragonal alloy films with tetragonal FeSe and hexagonal FeS targets, we adopted an alternate deposition technique with FeSe buffer layer on MgO(001). The overall film composition is controlled by the thickness ratio of FeS / FeSe layers. The out-of-plane lattice parameter of the films follows Vegard's law, demonstrating homogeneous alloying by inter-diffusion. The sulfur solid solubility reaches $x = 0.78$ in the $\mathrm{FeS}_x\mathrm{Se}_{1-x}$ films, which is by far larger than $x \approx 0.40$ in bulk governed by the tetragonal phase instability.
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Submitted 1 August, 2017;
originally announced August 2017.
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Quantum Hall effect in a bulk antiferromagnet EuMnBi$_2$ with magnetically confined two-dimensional Dirac fermions
Authors:
H. Masuda,
H. Sakai,
M. Tokunaga,
Y. Yamasaki,
A. Miyake,
J. Shiogai,
S. Nakamura,
S. Awaji,
A. Tsukazaki,
H. Nakao,
Y. Murakami,
T. H. Arima,
Y. Tokura,
S. Ishiwata
Abstract:
For the innovation of spintronic technologies, Dirac materials, in which the low-energy excitation is described as relativistic Dirac fermions, are one of the most promising systems, because of the fascinating magnetotransport associated with the extremely high mobility. To incorporate Dirac fermions into spintronic applications, their quantum transport phenomena are desired to be manipulated to a…
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For the innovation of spintronic technologies, Dirac materials, in which the low-energy excitation is described as relativistic Dirac fermions, are one of the most promising systems, because of the fascinating magnetotransport associated with the extremely high mobility. To incorporate Dirac fermions into spintronic applications, their quantum transport phenomena are desired to be manipulated to a large extent by magnetic order in a solid. We here report a bulk half-integer quantum Hall effect in a layered antiferromagnet EuMnBi$_2$, in which field-controllable Eu magnetic order significantly suppresses the interlayer coupling between the Bi layers with Dirac fermions. In addition to the high mobility more than 10,000 cm$^2$/Vs, Landau level splittings presumably due to the lifting of spin and valley degeneracy are noticeable even in a bulk magnet. These results will pave a route to the engineering of magnetically functionalized Dirac materials.
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Submitted 12 March, 2017;
originally announced March 2017.
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Electric-field-induced superconductivity in electrochemically-etched ultrathin FeSe films on SrTiO3 and MgO
Authors:
J. Shiogai,
Y. Ito,
T. Mitsuhashi,
T. Nojima,
A. Tsukazaki
Abstract:
Among the recently discovered iron-based superconductors, ultrathin films of FeSe grown on SrTiO3 substrates have uniquely evolved into a high superconducting-transition-temperature (TC) material. The mechanisms for the high-TC superconductivity are ongoing debate mainly with the superconducting gap characterized with in-situ analysis for FeSe films grown by bottom-up molecular-beam epitaxy. Here,…
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Among the recently discovered iron-based superconductors, ultrathin films of FeSe grown on SrTiO3 substrates have uniquely evolved into a high superconducting-transition-temperature (TC) material. The mechanisms for the high-TC superconductivity are ongoing debate mainly with the superconducting gap characterized with in-situ analysis for FeSe films grown by bottom-up molecular-beam epitaxy. Here, we demonstrate the alternative access to investigate the high-TC superconductivity in ultrathin FeSe with top-down electrochemical etching technique in three-terminal transistor configuration. In addition to the high-TC FeSe on SrTiO3, the electrochemically etched ultrathin FeSe transistor on MgO also exhibits superconductivity around 40 K, implying that the application of electric-field effectively contributes to the high-TC superconductivity in ultrathin FeSe regardless of substrate material. Moreover, the observable critical thickness for the high-TC superconductivity is expanded up to 10-unit-cells under applying electric-field and the insulator-superconductor transition is electrostatically controlled. The present demonstration implies that the electric-field effect on both conduction and valence bands plays a crucial role for inducing high-TC superconductivity in FeSe.
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Submitted 1 October, 2015;
originally announced October 2015.
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Magnetic field-induced insulator-semimetal transition in a pyrochlore Nd2Ir2O7
Authors:
K. Ueda,
J. Fujioka,
B. -J. Yang,
J. Shiogai,
A. Tsukazaki,
S. Nakamura,
S. Awaji,
N. Nagaosa,
Y. Tokura
Abstract:
We have investigated magneto-transport properties in a single crystal of pyrochore-type Nd2Ir2O7. The metallic conduction is observed on the antiferromagnetic domain walls of the all-in all-out type Ir-5d moment ordered insulating bulk state, that can be finely controlled by external magnetic field along [111]. On the other hand, an applied field along [001] induces the bulk phase transition from…
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We have investigated magneto-transport properties in a single crystal of pyrochore-type Nd2Ir2O7. The metallic conduction is observed on the antiferromagnetic domain walls of the all-in all-out type Ir-5d moment ordered insulating bulk state, that can be finely controlled by external magnetic field along [111]. On the other hand, an applied field along [001] induces the bulk phase transition from insulator to semimetal as a consequence of the field-induced modification of Nd-4f and Ir-5d moment configurations. A theoretical calculation consistently describing the experimentally observed features suggests a variety of exotic topological states as functions of electron correlation and Ir-5d moment orders which can be finely tuned by choice of rare-earth ion and by magnetic field, respectively.
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Submitted 24 June, 2015;
originally announced June 2015.
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Shot Noise Induced by Nonequilibrium Spin Accumulation
Authors:
Tomonori Arakawa,
Junichi Shiogai,
Mariusz Ciorga,
Martin Utz,
Dieter Schuh,
Makoto Kohda,
Junsaku Nitta,
Dominique Bougeard,
Dieter Weiss,
Teruo Ono,
Kensuke Kobayashi
Abstract:
When an electric current passes across a potential barrier, the partition process of electrons at the barrier gives rise to the shot noise, reflecting the discrete nature of the electric charge. Here we report the observation of excess shot noise connected with a spin current which is induced by a nonequilibrium spin accumulation in an all-semiconductor lateral spin-valve device. We find that this…
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When an electric current passes across a potential barrier, the partition process of electrons at the barrier gives rise to the shot noise, reflecting the discrete nature of the electric charge. Here we report the observation of excess shot noise connected with a spin current which is induced by a nonequilibrium spin accumulation in an all-semiconductor lateral spin-valve device. We find that this excess shot noise is proportional to the spin current. Additionally, we determine quantitatively the spin-injection-induced electron temperature by measuring the current noise. Our experiments show that spin accumulation driven shot noise provides a novel means of investigating nonequilibrium spin transport.
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Submitted 24 January, 2015; v1 submitted 2 July, 2014;
originally announced July 2014.
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Giant enhancement of spin detection sensitivity in (Ga,Mn)As/GaAs Esaki diodes
Authors:
Junichi Shiogai,
Mariusz Ciorga,
Martin Utz,
Dieter Schuh,
Makoto Kohda,
Dominique Bougeard,
Tsutomu Nojima,
Junsaku Nitta,
Dieter Weiss
Abstract:
We investigate the correlation between spin signals measured in three-terminal (3T) geometry by the Hanle effect and the spin accumulation generated in a semiconductor channel in a lateral (Ga,Mn)As/GaAs Esaki diode device. We systematically compare measurements using a 3T configuration, probing spin accumulation directly beneath the injecting contact, with results from nonlocal measurements, wher…
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We investigate the correlation between spin signals measured in three-terminal (3T) geometry by the Hanle effect and the spin accumulation generated in a semiconductor channel in a lateral (Ga,Mn)As/GaAs Esaki diode device. We systematically compare measurements using a 3T configuration, probing spin accumulation directly beneath the injecting contact, with results from nonlocal measurements, where solely spin accumulation in the GaAs channel is probed. We find that the spin signal detected in the 3T configuration is dominated by a bias-dependent spin detection sensitivity, which in turn is strongly correlated with charge-transport properties of the junction. This results in a particularly strong enhancement of the detected spin signal in a region of increased differential resistance. We find additionally that two-step tunneling via localized states (LS) in the gap of (Ga,Mn)As does not compromise spin injection into the semiconductor conduction band.
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Submitted 20 December, 2013; v1 submitted 23 October, 2013;
originally announced October 2013.
