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180$^\circ$-twisted bilayer ReSe$_2$ as an artificial noncentrosymmetric semiconductor
Authors:
S. Akatsuka,
M. Sakano,
T. Yamamoto,
T. Nomoto,
R. Arita,
R. Murata,
T. Sasagawa,
K. Watanabe,
T. Taniguchi,
M. Kitamura,
K. Horiba,
K. Sugawara,
S. Souma,
T. Sato,
H. Kumigashira,
K. Shinokita,
H. Wang,
K. Matsuda,
S. Masubuchi,
T. Machida,
K. Ishizaka
Abstract:
We have fabricated a 180$^\circ$-twisted bilayer ReSe$_2$ by stacking two centrosymmetric monolayer ReSe$_2$ flakes in opposite directions, which is expected to lose spatial inversion symmetry. By the second harmonic generation and angle-resolved photoemission spectroscopy, we successfully observed spatial inversion symmetry breaking and emergent band dispersions. The band calculation shows the fi…
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We have fabricated a 180$^\circ$-twisted bilayer ReSe$_2$ by stacking two centrosymmetric monolayer ReSe$_2$ flakes in opposite directions, which is expected to lose spatial inversion symmetry. By the second harmonic generation and angle-resolved photoemission spectroscopy, we successfully observed spatial inversion symmetry breaking and emergent band dispersions. The band calculation shows the finite lifting of spin degeneracy (~50 meV) distinct from natural monolayer and bilayer ReSe$_2$. Our results demonstrate that the spin-momentum locked state, which leads to spintronic functions and Berry-curvature-related phenomena, can be realized even with the stacking of centrosymmetric monolayers.
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Submitted 27 September, 2023;
originally announced September 2023.
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Quantum coherence and interference of a single moiré exciton in nano-fabricated twisted semiconductor heterobilayers
Authors:
Haonan Wang,
Heejun Kim,
Duanfei Dong,
Keisuke Shinokita,
Kenji Watanabe,
Takashi Taniguchi,
Kazunari Matsuda
Abstract:
Moiré potential acts as periodic quantum confinement for optically generated exciton, generating spatially ordered zero-dimensional quantum system. However, broad emission spectrum arising from inhomogeneity among moiré potential hinders the exploration of the intrinsic properties of moiré exciton. In this study, we have demonstrated a new method to realize the optical observation of quantum coher…
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Moiré potential acts as periodic quantum confinement for optically generated exciton, generating spatially ordered zero-dimensional quantum system. However, broad emission spectrum arising from inhomogeneity among moiré potential hinders the exploration of the intrinsic properties of moiré exciton. In this study, we have demonstrated a new method to realize the optical observation of quantum coherence and interference of a single moiré exciton in twisted semiconducting heterobilayer beyond the diffraction limit of light. A significant single and sharp photoluminescence peak from a single moiré exciton has been demonstrated after nano-fabrication. We present the longer duration of quantum coherence of a single moiré exciton, which reaches beyond 10 ps and the accelerated decoherence process with elevating temperature and excitation power density. Moreover, the quantum interference has revealed the coupling between moiré excitons in different moiré potential minima. The observed quantum coherence and interference of moiré exciton will facilitate potential application toward quantum technologies based on moiré quantum systems.
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Submitted 6 September, 2023;
originally announced September 2023.
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Dynamics of moire trion and its valley polarization in microfabricated WSe2/MoSe2 heterobilayer
Authors:
Heejun Kim,
Duanfei Dong,
Yuki Okamura,
Keisuke Shinokita,
Kenji Watanabe,
Takashi Taniguchi,
Kazunari Matsuda
Abstract:
The moire potential, induced by stacking two monolayer semiconductors with slightly different lattice mismatches, acts as periodic quantum confinement for optically generated excitons, resulting in spatially ordered zero-dimensional quantum systems. However, there are limitations to exploring intrinsic optical properties of moire excitons due to ensemble averaged and broadened emissions from many…
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The moire potential, induced by stacking two monolayer semiconductors with slightly different lattice mismatches, acts as periodic quantum confinement for optically generated excitons, resulting in spatially ordered zero-dimensional quantum systems. However, there are limitations to exploring intrinsic optical properties of moire excitons due to ensemble averaged and broadened emissions from many peaks caused by the inhomogeneity of the moire potential. In this study, we proposed a microfabrication technique based on focused Ga+ ion beams, which enables us to control the number of peaks originating from the moire potential and thus explore unknown moire optical characteristics of WSe2/MoSe2 heterobilayers. By taking advantage of this approach, we reveal emissions from a single moire exciton and charged moire exciton (trion) under electrostatic do** conditions. We show the momentum dark moire trion state above the bright trion state with a splitting energy of approximately 4 meV and clarify that the dynamics are determined by the initial trion population in the bright state. Furthermore, the degree of negative circularly polarized emissions and their valley dynamics of moire trions are dominated by a very long valley relaxation process lasting ~700 ns. Our findings on microfabricated heterobilayers could be viewed as an extension of our groundbreaking efforts in the field of quantum optics application using moire superlattices.
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Submitted 26 January, 2023;
originally announced January 2023.
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Moiré exciton dynamics and moiré exciton-phonon interaction in a WSe$_2$/MoSe$_2$ heterobilayer
Authors:
Keisuke Shinokita,
Yuhei Miyauchi,
Kenji Watanabe,
Takashi Taniguchi,
Kazunari Matsuda
Abstract:
Moiré patterns with angular mismatch in van der Waals heterostructures composed of atomically thin semiconducting materials are a fascinating platform to engineer the optically generated excitonic properties towards novel quantum phenomena. The moiré pattern as a periodic trap potential can give rise to spatially ordered zero-dimensional (0D) exciton ensembles, which offers the possibility for den…
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Moiré patterns with angular mismatch in van der Waals heterostructures composed of atomically thin semiconducting materials are a fascinating platform to engineer the optically generated excitonic properties towards novel quantum phenomena. The moiré pattern as a periodic trap potential can give rise to spatially ordered zero-dimensional (0D) exciton ensembles, which offers the possibility for dense coherent quantum emitters and quantum simulation of many-body physics. The intriguing moiré exciton properties are affected by their dynamics and exciton-phonon interaction. However, the moiré exciton dynamics and the interaction between the moiré exciton and phonon are still elusive. Here, we report the moiré exciton and phonon interaction in a twisted WSe$_2$/MoSe$_2$ heterobilayer based on near-resonant photoluminescence excitation spectroscopy. We observed the selective excitation of the ground state of the moiré exciton at phonon resonance. The otherwise negligible small absorption below the continuum state is a hallmark of the density of states of a 0D-like system. In addition, the excitation power dependence of the PL spectra reveals the dynamics of moiré exciton ensembles between different potential minima with discrete energy levels via the resonant phonon scattering process. The results presented here of the moiré exciton dynamics under suppressed phonon interaction could pave a new way for the exploration of novel quantum phenomena of the moiré exciton towards potential applications in quantum optics.
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Submitted 15 December, 2020;
originally announced December 2020.
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Exciton diffusion in a hBN-encapsulated monolayer MoSe2
Authors:
T. Hotta,
S. Higuchi,
A. Ueda,
K. Shinokita,
Y. Miyauchi,
K. Matsuda,
K. Ueno,
T. Taniguchi,
K. Watanabe,
R. Kitaura
Abstract:
Excitons, quasi particles composed of an electron and a hole, play an important role in optical responses in low-dimensional nanostructures. In this work, we have investigated exciton diffusion in a monolayer MoSe2 encapsulated between flakes of hexagonal boron nitrides (hBN/MoSe2/hBN). Through PL imaging and numerical solving the 2D diffusion equation, we revealed that temperature dependence of e…
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Excitons, quasi particles composed of an electron and a hole, play an important role in optical responses in low-dimensional nanostructures. In this work, we have investigated exciton diffusion in a monolayer MoSe2 encapsulated between flakes of hexagonal boron nitrides (hBN/MoSe2/hBN). Through PL imaging and numerical solving the 2D diffusion equation, we revealed that temperature dependence of exciton mobility in the hBN/MoSe2/hBN shows non-saturating increase at low temperature, which is qualitatively different from those of quantum wells composed of compound semiconductors. Ultraflat structure of monolayer MoSe2 in the hBN/MoSe2/hBN probably leads to the suppression of charged-impurity scattering and surface-roughness scattering.
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Submitted 1 May, 2020; v1 submitted 27 April, 2020;
originally announced April 2020.
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Large Enhancement of the Photoluminescence Emission of Photoexcited Undoped GaAs Quantum Wells Induced by an Intense Single-Cycle Terahertz Pulse
Authors:
K. Shinokita,
H. Hirori,
K. Tanaka,
T. Mochizuki,
C. Kim,
H. Akiyama,
L. N. Pfeiffer,
K. W. West
Abstract:
Intense terahetz (THz) pulses induce a photoluminescence (PL) flash from undoped high-quality GaAs/AlGaAs quantum wells under continuous wave laser excitation. The number of excitons increases 10000-fold from that of the steady state under only laser excitation. The THz electric field dependence and the relaxation dynamics of the PL flash intensity suggest that the strong electric field of the THz…
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Intense terahetz (THz) pulses induce a photoluminescence (PL) flash from undoped high-quality GaAs/AlGaAs quantum wells under continuous wave laser excitation. The number of excitons increases 10000-fold from that of the steady state under only laser excitation. The THz electric field dependence and the relaxation dynamics of the PL flash intensity suggest that the strong electric field of the THz pulse ionizes impurity states during the one-picosecond period of the THz pulse and release carriers from a giant reservoir containing impurity states in the AlGaAs layers.
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Submitted 15 July, 2013;
originally announced July 2013.
