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Large Second Harmonic Kerr rotation in GaFeO3 thin films on YSZ buffered Silicon
Authors:
Darshan C. Kundaliya,
S. B. Ogale,
S. Dhar,
K. F. McDonald,
E. Knoesel,
T. Osedach,
S. E. Lofland,
S. R. Shinde,
T. Venkatesan
Abstract:
Epitaxial thin films of gallium iron oxide (GaFeO3) are grown on (001) silicon by pulsed laser deposition (PLD) using yttrium-stabilized zirconia (YSZ) buffer layer. The crystalline template buffer layer is in-situ PLD grown through the step of high temperature strip** of the intrinsic silicon surface oxide. The X-ray diffraction pattern shows c-axis orientation of YSZ and b-axis orientation o…
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Epitaxial thin films of gallium iron oxide (GaFeO3) are grown on (001) silicon by pulsed laser deposition (PLD) using yttrium-stabilized zirconia (YSZ) buffer layer. The crystalline template buffer layer is in-situ PLD grown through the step of high temperature strip** of the intrinsic silicon surface oxide. The X-ray diffraction pattern shows c-axis orientation of YSZ and b-axis orientation of GaFeO3 on Si (100) substrate. The ferromagnetic transition temperature (TC ~ 215 K) is in good agreement with the bulk data. The films show a large nonlinear second harmonic Kerr rotation of ~15 degrees in the ferromagnetic state.
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Submitted 5 August, 2005;
originally announced August 2005.
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Percolative Ferromagnetism in Anatase Co:TiO2
Authors:
S. R. Shinde,
S. B. Ogale,
Abhijit S. Ogale,
S. J. Welz,
A. Lussier,
Darshan C. Kundaliya,
H. Zheng,
S. Dhar,
M. S. R. Rao,
R. Ramesh,
Y. U. Idzerda,
N. D. Browning,
T. Venkatesan
Abstract:
We revisit the most widely investigated and controversial oxide diluted magnetic semiconductor (DMS), Co:TiO2, with a new high temperature film growth, and show that the corresponding material is not only an intrinsic DMS ferromagnet, but also supports a percolative mechanism of ferromagnetism. We establish the uniformity of dopant distribution across the film cross section by Z-contrast imaging…
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We revisit the most widely investigated and controversial oxide diluted magnetic semiconductor (DMS), Co:TiO2, with a new high temperature film growth, and show that the corresponding material is not only an intrinsic DMS ferromagnet, but also supports a percolative mechanism of ferromagnetism. We establish the uniformity of dopant distribution across the film cross section by Z-contrast imaging via scanning transmission electron microscopy (STEM) and electron energy loss spectroscopy (EELS) at spatial resolution of 0.4 nm and the oxidized 2+ valence state of cobalt by x-ray absorption spectroscopy (XAS). The dependence of magnetic properties on cobalt concentration is consistent with the defect polaron percolation model. The peculiar increase in the transport activation energy above a specific cobalt concentration further emphasizes the polaron contribution to magnetic order.
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Submitted 10 May, 2005;
originally announced May 2005.
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A new ferromagnetic insulator with giant magnetic moment-Co:HfO2
Authors:
M. S. Ramachandra Rao,
S. Dhar,
S. J. Welz,
S. B. Ogale,
Darshan C. Kundaliya,
S. R. Shinde,
S. E. Lofland,
C. J. Metting,
R. Erni,
N. D. Browning,
T. Venkatesan
Abstract:
The authors have withdrawn the paper.
The authors have withdrawn the paper.
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Submitted 14 September, 2004; v1 submitted 17 May, 2004;
originally announced May 2004.
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Electric Field Effect in Diluted Magnetic Insulator Anatase Co:TiO2
Authors:
T. Zhao,
S. R. Shinde,
S. B. Ogale,
H. Zheng,
T. Venkatesan,
R. Ramesh,
S. Das Sarma
Abstract:
An external electric field induced reversible modulation of room temperature magnetic moment is achieved in an epitaxial and insulating thin film of dilutely cobalt-doped anatase TiO2. This first demonstration of electric field effect in any oxide based diluted ferromagnet is realized in a high quality epitaxial heterostructure of PbZr0.2Ti0.8O3/Co:TiO2/SrRuO3 grown on (001) LaAlO3. The observed…
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An external electric field induced reversible modulation of room temperature magnetic moment is achieved in an epitaxial and insulating thin film of dilutely cobalt-doped anatase TiO2. This first demonstration of electric field effect in any oxide based diluted ferromagnet is realized in a high quality epitaxial heterostructure of PbZr0.2Ti0.8O3/Co:TiO2/SrRuO3 grown on (001) LaAlO3. The observed effect, which is about 15% in strength in a given heterostructure, can be modulated over several cycles. Possible mechanisms for electric field induced modulation of insulating ferromagnetism are discussed.
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Submitted 7 April, 2004;
originally announced April 2004.
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Co-occurrence of Superparamagnetism and Anomalous Hall Effect in Highly Reduced Cobalt Doped Rutile TiO2 Films
Authors:
S. R. Shinde,
S. B. Ogale,
J. S. Higgins,
H. Zheng,
A. J. Millis,
V. N. Kulkarni,
R. Ramesh,
R. L. Greene,
T. Venkatesan
Abstract:
We report a detailed magnetic and structural analysis of highly reduced Co doped rutile TiO2 films displaying an anomalous Hall effect (AHE). The temperature and field dependence of magnetization, and transmission electron microscopy clearly establish the presence of nano-sized superparamagnetic cobalt clusters of 8-10 nm size in the films at the interface. The co-occurrence of superparamagnetis…
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We report a detailed magnetic and structural analysis of highly reduced Co doped rutile TiO2 films displaying an anomalous Hall effect (AHE). The temperature and field dependence of magnetization, and transmission electron microscopy clearly establish the presence of nano-sized superparamagnetic cobalt clusters of 8-10 nm size in the films at the interface. The co-occurrence of superparamagnetism and AHE raises questions regarding the use of the AHE as a test of the intrinsic nature of ferromagnetism in diluted magnetic semiconductors.
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Submitted 1 March, 2004;
originally announced March 2004.
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Hall effect in cobalt-doped TiO$_{2-δ}$
Authors:
J. S. Higgins,
S. R. Shinde,
S. B. Ogale,
T. Venkatesan,
R. L. Greene
Abstract:
We report Hall effect measurements on thin films of cobalt-doped TiO$_{2-δ}$. Films with low carrier concentrations (10$^{18}$ - 10$^{19}$) yield a linear behavior in the Hall data while those having higher carrier concentrations (10$^{21}$ - 10$^{22}$) display anomalous behavior near zero field. In the entire range of carrier concentration, n-type conduction is observed. The appearance of the a…
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We report Hall effect measurements on thin films of cobalt-doped TiO$_{2-δ}$. Films with low carrier concentrations (10$^{18}$ - 10$^{19}$) yield a linear behavior in the Hall data while those having higher carrier concentrations (10$^{21}$ - 10$^{22}$) display anomalous behavior near zero field. In the entire range of carrier concentration, n-type conduction is observed. The appearance of the anomalous behavior is accompanied by a possible structural change from rutile TiO$_{2}$ to Ti$_[n}$O$_{2n-1}$ Magneli phase(s).
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Submitted 3 November, 2003;
originally announced November 2003.
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Temperature dependent optical studies of Ti$_{1-x}$Co$_x$O$_2$
Authors:
S. Guha,
K. Ghosh,
J. G. Keeth,
S. B. Ogale,
S. R. Shinde,
J. R. Simpson,
H. D. Drew,
T. Venkatesan
Abstract:
We present the results of Raman and photoluminescence (PL) studies on epitaxial anatase phase Ti$_{1-x}$Co$_x$O$_2$ films for $x$ = 0-0.07, grown by pulsed laser deposition. The low doped system ($x$=0.01 and 0.02) shows a Curie temperature of ~700 K in the as-grown state. The Raman spectra from the doped and undoped films confirm their anatase phase. The photoluminescence spectrum is characteri…
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We present the results of Raman and photoluminescence (PL) studies on epitaxial anatase phase Ti$_{1-x}$Co$_x$O$_2$ films for $x$ = 0-0.07, grown by pulsed laser deposition. The low doped system ($x$=0.01 and 0.02) shows a Curie temperature of ~700 K in the as-grown state. The Raman spectra from the doped and undoped films confirm their anatase phase. The photoluminescence spectrum is characterized by a broad emission from self-trapped excitons (STE) at 2.3 eV at temperatures below 120 K. This peak is characteristic of the anatase-phase TiO$_2$ and shows a small blueshift with increasing do** concentration. In addition to the emission from STE, the Co-doped samples show two emission lines at 2.77 eV and 2.94 eV that are absent in the undoped film indicative of a spin-flip energy.
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Submitted 10 March, 2003;
originally announced March 2003.
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High Temperature Ferromagnetism with Giant Magnetic Moment in Transparent Co-doped SnO2-d
Authors:
S. B. Ogale,
R. J. Choudhary,
J. P. Buban,
S. E. Lofland,
S. R. Shinde,
S. N. Kale,
V. N. Kulkarni,
J. Higgins,
C. Lanci,
J. R. Simpson,
N. D. Browning,
S. Das Sarma,
H. D. Drew,
R. L. Greene,
T. Venkatesan
Abstract:
Occurrence of room temperature ferromagnetism is demonstrated in pulsed laser deposited thin films of Sn1-xCoxO2-d (x<0.3). Interestingly, films of Sn0.95Co0.05O2-d grown on R-plane sapphire not only exhibit ferromagnetism with a Curie temperature close to 650 K, but also a giant magnetic moment of about 7 Bohr-Magneton/Co, not yet reported in any diluted magnetic semiconductor system. The films…
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Occurrence of room temperature ferromagnetism is demonstrated in pulsed laser deposited thin films of Sn1-xCoxO2-d (x<0.3). Interestingly, films of Sn0.95Co0.05O2-d grown on R-plane sapphire not only exhibit ferromagnetism with a Curie temperature close to 650 K, but also a giant magnetic moment of about 7 Bohr-Magneton/Co, not yet reported in any diluted magnetic semiconductor system. The films are semiconducting and optically highly transparent.
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Submitted 23 January, 2003;
originally announced January 2003.
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Magnetism in Cobalt doped Cu2O thin films without and with Al, V, Zn codopants
Authors:
S. N. Kale,
S. B. Ogale,
S. R. Shinde,
M. Sahasrabuddhe,
V. N. Kulkarni,
R. L. Greene,
T. Venkatesan
Abstract:
Thin films of 5 % Co doped Cu2O were grown on single crystal (001) MgO substrates by pulsed laser deposition, without and with 0.5 % codo** with Al, V or Zn. Structural, electrical, and magnetic properties were studied. The films showed phase pure character under the chosen optimum growth conditions. Spin glass like behavior was observed in Co doped films without codo**. A clear ferromagneti…
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Thin films of 5 % Co doped Cu2O were grown on single crystal (001) MgO substrates by pulsed laser deposition, without and with 0.5 % codo** with Al, V or Zn. Structural, electrical, and magnetic properties were studied. The films showed phase pure character under the chosen optimum growth conditions. Spin glass like behavior was observed in Co doped films without codo**. A clear ferromagnetic signal at room temperature was found only in the case of Co:Cu2O films codoped with Al.
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Submitted 23 January, 2003;
originally announced January 2003.
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Co-doped LaLa1-xSrxTiO3-d : A Diluted Magnetic Oxide System with High Curie Temperature
Authors:
Y. G. Zhao,
S. R. Shinde,
S. B. Ogale,
J. Higgins,
S. E. Lofland,
C. Lanci,
J. P. Buban,
N. D. Browning,
S. Das Sarma,
A. J. Millis,
V. N. Kulkarni,
R. J. Choudhary,
R. L. Greene,
T. Venkatesan
Abstract:
Ferromagnetism is observed at and above room temperature in pulsed laser deposited epitaxial films of Co-doped Ti-based oxide perovskite (La1-xSrxTiO3-d). The system has the characteristics of an intrinsic diluted magnetic semiconductor (metal) at low concentrations (<~ 2 %), but develops inhomogeneity at higher cobalt concentrations. The films range from being opaque metallic to transparent sem…
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Ferromagnetism is observed at and above room temperature in pulsed laser deposited epitaxial films of Co-doped Ti-based oxide perovskite (La1-xSrxTiO3-d). The system has the characteristics of an intrinsic diluted magnetic semiconductor (metal) at low concentrations (<~ 2 %), but develops inhomogeneity at higher cobalt concentrations. The films range from being opaque metallic to transparent semiconducting depending on the oxygen pressure during growth and are yet ferromagnetic.
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Submitted 31 July, 2003; v1 submitted 11 September, 2002;
originally announced September 2002.
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Optical band edge shift of anatase cobalt-doped titanium dioxide
Authors:
J. R. Simpson,
H. D. Drew,
S. R. Shinde,
R. J. Choudhary,
S. B. Ogale,
T. Venkatesan
Abstract:
We report on the optical properties of magnetic cobalt-doped anatase phase titanium dioxide Ti_{1-x}Co_{x}O_{2-d} films for low do** concentrations, 0 <= x <= 0.02, in the spectral range 0.2 to 5 eV. For well oxygenated films (d << 1) the optical conductivity is characterized by an absence of optical absorption below an onset of interband transitions at 3.6 eV and a blue shift of the optical b…
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We report on the optical properties of magnetic cobalt-doped anatase phase titanium dioxide Ti_{1-x}Co_{x}O_{2-d} films for low do** concentrations, 0 <= x <= 0.02, in the spectral range 0.2 to 5 eV. For well oxygenated films (d << 1) the optical conductivity is characterized by an absence of optical absorption below an onset of interband transitions at 3.6 eV and a blue shift of the optical band edge with increasing Co concentration. The absence of below band gap absorption is inconsistent with theoretical models which contain midgap magnetic impurity bands and suggests that strong on-site Coulomb interactions shift the O-band to Co-level optical transitions to energies above the gap.
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Submitted 27 August, 2003; v1 submitted 29 May, 2002;
originally announced May 2002.
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Ferromagnetism in laser deposited anatase Ti$_{1-x}$Co$_{x}$O$_{2-$δ$}$ films
Authors:
S. R. Shinde,
S. B. Ogale,
S. Das Sarma,
J. R. Simpson,
H. D. Drew,
S. E. Lofland,
C. Lanci,
J. P. Buban,
N. D. Browning,
V. N. Kulkarni,
J. Higgins,
R. P. Sharma,
R. L. Greene,
T. Venkatesan
Abstract:
Pulsed laser deposited films of Co doped anatase TiO2 are examined for Co substitutionality, ferromagnetism, transport, magnetotransport and optical properties. Our results show limited solubility (up to ~ 2 %) of Co in the as-grown films and formation of Co clusters thereafter. For Ti0.93Co0.07O2-d sample, which exhibits a Curie temperature (Tc) over 1180 K, we find the presence of 20-50 nm Co…
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Pulsed laser deposited films of Co doped anatase TiO2 are examined for Co substitutionality, ferromagnetism, transport, magnetotransport and optical properties. Our results show limited solubility (up to ~ 2 %) of Co in the as-grown films and formation of Co clusters thereafter. For Ti0.93Co0.07O2-d sample, which exhibits a Curie temperature (Tc) over 1180 K, we find the presence of 20-50 nm Co clusters as well as a small concentration of Co incorporated into the remaining matrix. After being subjected to the high temperature anneal during the first magnetization measurement, the very same sample shows a Tc ~ 650 K and almost full matrix incorporation of Co. This Tc is close to that of as-grown Ti0.99Co0.01O2-d sample (~ 700 K). The transport, magnetotransport and optical studies also reveal interesting effects of the matrix incorporation of Co. These results are indicative of an intrinsic Ti1-xCoxO2-d diluted magnetic semiconductor with Tc of about 650-700 K.
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Submitted 12 December, 2002; v1 submitted 27 March, 2002;
originally announced March 2002.
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Observation of large anisotropy in c-axis oriented thin films of MgB$_{2}$ prepared by an in situ pulsed laser deposition process
Authors:
S. R. Shinde,
S. B. Ogale,
A. Biswas,
R. L. Greene,
T. Venkatesan
Abstract:
A large anisotropy in the upper critical field (H$_{C2}$) is observed for MgB$_{2}$ films grown in situ by a pulsed laser deposition process involving growth and annealing of Mg and B multilayers. Measurements of resistivity as a function of temperature and magnetic field yield the estimated zero temperature values of H$_{C2}$ in the range 100 to 130 T and about 10 T, for the field in ab plane a…
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A large anisotropy in the upper critical field (H$_{C2}$) is observed for MgB$_{2}$ films grown in situ by a pulsed laser deposition process involving growth and annealing of Mg and B multilayers. Measurements of resistivity as a function of temperature and magnetic field yield the estimated zero temperature values of H$_{C2}$ in the range 100 to 130 T and about 10 T, for the field in ab plane and along c axis, respectively, depending on the criterion chosen for the transition temperature. The corresponding anisotropy parameter is thus in the range 9 to 13. The estimated coherence length in ab plane is about 50 Å, whereas that in the c direction is much smaller (\approx 5 Å). No significant magnetoresistance is observed in the normal state.
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Submitted 25 October, 2001;
originally announced October 2001.
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Superconducting MgB2 thin films by pulsed laser deposition
Authors:
S. R. Shinde,
S. B. Ogale,
R. L. Greene,
T. Venkatesan,
P. C. Canfield,
S. L. Budko,
G. Lapertot,
C. Petrovic
Abstract:
Growth of MgB2 thin films by pulsed laser deposition is examined under ex situ and in situ processing conditions. For the ex situ process, Boron films grown by PLD were annealed at 900 C with excess Mg. For the in situ process, different approaches involving ablation from a stoichiometric target under different growth conditions, as well as multilayer deposition involving interposed Mg layers we…
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Growth of MgB2 thin films by pulsed laser deposition is examined under ex situ and in situ processing conditions. For the ex situ process, Boron films grown by PLD were annealed at 900 C with excess Mg. For the in situ process, different approaches involving ablation from a stoichiometric target under different growth conditions, as well as multilayer deposition involving interposed Mg layers were examined and analyzed. Magnetic measurements on ex situ processed films show TC of ~39 K, while the current best in situ films show a susceptibility transition at ~ 22 K.
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Submitted 26 March, 2001;
originally announced March 2001.
