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Structural properties of amorphous Na$_3$OCl electrolyte by first-principles and machine learning molecular dynamics
Authors:
T. -L. Pham,
M. Guerboub,
S. D. Wansi Wendj,
A. Bouzid,
C. Tugène,
M. Boero,
C. Massobrio,
Y. -H. Shin,
G. Ori
Abstract:
Solid-state electrolytes mark a significant leap forward in the field of electrochemical energy storage, offering improved safety and efficiency compared to conventional liquid electrolytes. Among these, antiperovskite electrolytes, particularly those based on Li and Na, have emerged as promising candidates due to their superior ionic conductivity and straightforward synthesis processes. This stud…
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Solid-state electrolytes mark a significant leap forward in the field of electrochemical energy storage, offering improved safety and efficiency compared to conventional liquid electrolytes. Among these, antiperovskite electrolytes, particularly those based on Li and Na, have emerged as promising candidates due to their superior ionic conductivity and straightforward synthesis processes. This study focuses on the amorphous phase of antiperovskite Na$_3$OCl, assessing its structural properties through a combination of first-principles molecular dynamics (FPMD) and machine learning interatomic potential (MLIP) simulations. Our comprehensive analysis spans models ranging from 135 to 3645 atoms, allowing for a detailed examination of X-ray and neutron structure factors, total and partial pair correlation functions, coordination numbers, and structural unit distributions. We demonstrate the minimal, albeit partially present, size effects on these structural features and validate the accuracy of the MLIP model in reproducing the intricate details of the amorphous Na$_3$OCl structure described at the FPMD level.
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Submitted 17 April, 2024;
originally announced April 2024.
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Two-qubit Gate of Combined Single Spin Rotation and Inter-dot Spin Exchange in a Double Quantum Dot
Authors:
R. Brunner,
Y. -S. Shin,
T. Obata,
M. Pioro-Ladrière,
T. Kubo,
K. Yoshida,
T. Taniyama,
Y. Tokura,
S. Tarucha
Abstract:
A crucial requirement for quantum information processing is the realization of multiple-qubit quantum gates. Here, we demonstrate an electron spin based all-electrical two-qubit gate consisting of single spin rotations and inter-dot spin exchange in a double quantum dot. A partially entangled output state is obtained by the application of the two-qubit gate to an initial, uncorrelated state. We fi…
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A crucial requirement for quantum information processing is the realization of multiple-qubit quantum gates. Here, we demonstrate an electron spin based all-electrical two-qubit gate consisting of single spin rotations and inter-dot spin exchange in a double quantum dot. A partially entangled output state is obtained by the application of the two-qubit gate to an initial, uncorrelated state. We find that the degree of entanglement is controllable by the exchange operation time. The approach represents a key step towards the realization of universal multiple qubit gates.
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Submitted 15 September, 2011;
originally announced September 2011.
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Electrically driven single electron spin resonance in a slanting Zeeman field
Authors:
M. Pioro-Ladriere,
T. Obata,
Y. Tokura,
Y. -S. Shin,
T. Kubo,
K. Yoshida,
T. Taniyama,
S. Tarucha
Abstract:
The rapidly rising fields of spintronics and quantum information science have led to a strong interest in develo** the ability to coherently manipulate electron spins. Electron spin resonance (ESR) is a powerful technique to manipulate spins that is commonly achieved by applying an oscillating magnetic field. However, the technique has proven very challenging when addressing individual spins.…
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The rapidly rising fields of spintronics and quantum information science have led to a strong interest in develo** the ability to coherently manipulate electron spins. Electron spin resonance (ESR) is a powerful technique to manipulate spins that is commonly achieved by applying an oscillating magnetic field. However, the technique has proven very challenging when addressing individual spins. In contrast, by mixing the spin and charge degrees of freedom in a controlled way through engineered non-uniform magnetic fields, electron spin can be manipulated electrically without the need of high-frequency magnetic fields. Here we realize electrically-driven addressable spin rotations on two individual electrons by integrating a micron-size ferromagnet to a double quantum dot device. We find that the electrical control and spin selectivity is enabled by the micro-magnet's stray magnetic field which can be tailored to multi-dots architecture. Our results demonstrate the feasibility of manipulating electron spins electrically in a scalable way.
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Submitted 7 May, 2008;
originally announced May 2008.
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A new limit of T-violating transverse muon polarization in the $K^{+}\toπ^{0}μ^{+} ν$ decay
Authors:
M. Abe,
M. Aliev,
V. Anisimovsky,
M. Aoki,
Y. Asano,
T. Baker,
M. Blecher,
P. Depommier,
M. Hasinoff,
K. Horie,
Y. Igarashi,
J. Imazato,
A. P. Ivashkin,
M. M. Khabibullin,
A. N. Khotjantsev,
Yu. G. Kudenko,
Y. Kuno,
K. S. Lee,
A. Levchenko,
G. Y. Lim,
J. A. Macdonald,
O. V. Mineev,
N. Okorokova,
C. Rangacharyulu,
S. Shimizu
, et al. (5 additional authors not shown)
Abstract:
A search for T-violating transverse muon polarization ($P_T$) in the $K^{+}\to π^{0}μ^{+}ν$ decay was performed using kaon decays at rest. A new improved value, $P_T= -0.0017\pm 0.0023 (stat)\pm 0.0011 (syst)$, was obtained giving an upper limit, $| P_T | < 0.0050$. The T-violation parameter was determined to be Im$ξ= -0.0053 \pm 0.0071(stat)\pm 0.0036(syst)$ giving an upper limit, $|$Im…
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A search for T-violating transverse muon polarization ($P_T$) in the $K^{+}\to π^{0}μ^{+}ν$ decay was performed using kaon decays at rest. A new improved value, $P_T= -0.0017\pm 0.0023 (stat)\pm 0.0011 (syst)$, was obtained giving an upper limit, $| P_T | < 0.0050$. The T-violation parameter was determined to be Im$ξ= -0.0053 \pm 0.0071(stat)\pm 0.0036(syst)$ giving an upper limit, $|$Im$ξ| <0.016$.
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Submitted 12 August, 2004;
originally announced August 2004.
