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Nanopatterning of multicomponent van der Waals heterostructures using atomic force microscopy
Authors:
A. L. Shilov,
L. Elesin,
A. Grebenko,
V. I. Kleshch,
M. A. Kashchenko,
I. Mazurenko,
E. Titova,
E. Zharkova,
D. S. Yakovlev,
K. S. Novoselov,
D. A. Ghazaryan,
V. Dremov,
D. A. Bandurin
Abstract:
Multilayer van der Waals (vdW) heterostructures have become an important platform in which to study novel fundamental effects emerging at the nanoscale. Standard nanopatterning techniques relying on electron-beam lithography and reactive ion etching, widely applied to pattern such heterostructures, however, impose some limitations on the edge accuracy and resolution, as revealed through numerous e…
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Multilayer van der Waals (vdW) heterostructures have become an important platform in which to study novel fundamental effects emerging at the nanoscale. Standard nanopatterning techniques relying on electron-beam lithography and reactive ion etching, widely applied to pattern such heterostructures, however, impose some limitations on the edge accuracy and resolution, as revealed through numerous experiments with vdW quantum dots and point contacts. Here we present an alternative approach for electrode-free nanopatterning of thick multilayer vdW heterostructures based on atomic force microscopy (AFM). By applying an AC voltage of a relatively small frequency (1-10 kHz) between the sharp platinum tip and the substrate, we realize high-resolution ($\lesssim 100$ nm) etching of thick multicomponent heterostructures if the latter are deposited onto graphite slabs. Importantly, unlike more conventional electrode-free local anodic oxidation, our method does not require a special environment with excess humidity, can be applied at ambient conditions, and enables the patterning of multilayer heterostructures composed of graphene, graphite, hexagonal boron nitride (hBN), NbSe$_{2}$, WSe$_{2}$, and more.
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Submitted 24 June, 2024;
originally announced June 2024.
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Anomalous terahertz photoconductivity caused by the superballistic flow of hydrodynamic electrons in graphene
Authors:
M. Kravtsov,
A. L. Shilov,
Y. Yang,
T. Pryadilin,
M. A. Kashchenko,
O. Popova,
M. Titova,
D. Voropaev,
Y. Wang,
K. Shein,
I. Gayduchenko,
G. N. Goltsman,
M. Lukianov,
A. Kudriashov,
T. Taniguchi,
K. Watanabe,
D. A. Svintsov,
A. Principi,
S. Adam,
K. S. Novoselov,
D. A. Bandurin
Abstract:
Light incident upon materials can induce changes in their electrical conductivity, a phenomenon referred to as photoresistance. In semiconductors, the photoresistance is negative, as light-induced promotion of electrons across the band gap enhances the number of charge carriers participating in transport. In superconductors, the photoresistance is positive because of the destruction of the superco…
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Light incident upon materials can induce changes in their electrical conductivity, a phenomenon referred to as photoresistance. In semiconductors, the photoresistance is negative, as light-induced promotion of electrons across the band gap enhances the number of charge carriers participating in transport. In superconductors, the photoresistance is positive because of the destruction of the superconducting state, whereas in normal metals it is vanishing. Here we report a qualitative deviation from the standard behavior in metallic graphene. We show that Dirac electrons exposed to continuous wave (CW) terahertz (THz) radiation can be thermally decoupled from the lattice by 50~K which activates hydrodynamic electron transport. In this regime, the resistance of graphene constrictions experiences a decrease caused by the THz-driven superballistic flow of correlated electrons. We analyze the dependencies of the negative photoresistance on the carrier density, and the radiation power and show that our superballistic devices operate as sensitive phonon-cooled bolometers and can thus offer a picosecond-scale response time. Beyond their fundamental implications, our findings underscore the practicality of electron hydrodynamics in designing ultra-fast THz sensors and electron thermometers.
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Submitted 29 March, 2024; v1 submitted 27 March, 2024;
originally announced March 2024.
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High-mobility compensated semimetals, orbital magnetization, and umklapp scattering in bilayer graphene moire superlattices
Authors:
A. L. Shilov,
M. A. Kashchenko,
P. A. Pantaleón,
M. Kravtsov,
A. Kudriashov,
Z. Zhan,
T. Taniguchi,
K. Watanabe,
S. Slizovskiy,
K. S. Novoselov,
V. I. Fal'ko,
F. Guinea,
D. A. Bandurin
Abstract:
Twist-controlled moire superlattices (MS) have emerged as a versatile platform in which to realize artificial systems with complex electronic spectra. Bernal-stacked bilayer graphene (BLG) and hexagonal boron nitride (hBN) form an interesting example of the MS that has recently featured a set of unexpected behaviors, such as unconventional ferroelectricity and electronic ratchet effect. Yet, the u…
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Twist-controlled moire superlattices (MS) have emerged as a versatile platform in which to realize artificial systems with complex electronic spectra. Bernal-stacked bilayer graphene (BLG) and hexagonal boron nitride (hBN) form an interesting example of the MS that has recently featured a set of unexpected behaviors, such as unconventional ferroelectricity and electronic ratchet effect. Yet, the understanding of the BLG/hBN MS electronic properties has, at present, remained fairly limited. Here we develop a multi-messenger approach that combines standard magnetotransport techniques with low-energy sub-THz excitation to get insights into the properties of this MS. We show that BLG/hBN lattice alignment results in the emergence of compensated semimetals at some integer fillings of the moire bands separated by van Hove singularities where Lifshitz transition occurs. A particularly pronounced semimetal develops when 8 electrons reside in the moire unit cell, where coexisting high-mobility electron and hole systems feature a strong magnetoresistance reaching 2350 % already at B=0.25 T. Next, by measuring the THz-driven Nernst effect in remote bands, we observe valley splitting, pointing to an orbital magnetization characterized by a strongly enhanced effective g-factor of 340. Last, using THz photoresistance measurements, we show that the high-temperature conductivity of the BLG/hBN MS is limited by electron-electron umklapp processes. Our multi-facet analysis introduces THz-driven magnetotransport as a convenient tool to probe the band structure and interaction effects in vdW materials and provides a comprehension of the BLG/hBN MS.
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Submitted 8 November, 2023;
originally announced November 2023.
