Showing 1–2 of 2 results for author: Shihabudeen, P K
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Nitrogen doped In$_2$O$_3$-ZnO nanocomposite thin film based sensitive and selective ethanol sensor
Authors:
P. K. Shihabudeen,
Ayan Roy Chaudhuri
Abstract:
Nanocomposite metal oxide thin films exhibit assuring qualities in the field of gas sensors because of the collective opportunities provided by the heterointerface formation. In this work, we present the synthesis of nitrogen doped mesoporous In$_2$O$_3$-ZnO nano-composite thin films by simple wet chemical method using urea as the nitrogen precursor. SEM investigation suggests formation of mesopor…
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Nanocomposite metal oxide thin films exhibit assuring qualities in the field of gas sensors because of the collective opportunities provided by the heterointerface formation. In this work, we present the synthesis of nitrogen doped mesoporous In$_2$O$_3$-ZnO nano-composite thin films by simple wet chemical method using urea as the nitrogen precursor. SEM investigation suggests formation of mesoporous nano-composite thin films, where the uniformity of surface pore distribution depends on the relative proportion of In$_2$O$_3$ and ZnO in the composites. HRTEM investigation suggest formation of sharp interfaces between N-In$_2$O$_3$ and N-ZnO grains in the nano-composite thin films. The nano-composite thin films have been tested for their ethanol sensing performance over an extensive range of temperature, ethanol vapor concentration and relative humidity. Nitrogen doped nano-composite thin film with equal proportion of In$_2$O$_3$ and ZnO exhibits excellent ethanol sensing performance at a reasonable operating temperature (~94 % at 200 °C for 50 ppm of ethanol), fast response time (~two seconds), stability over time, enhanced resilience against humidity and selectivity to ethanol over various other volatile organic compounds.
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Submitted 24 January, 2022;
originally announced February 2022.
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Nitrogen incorporated Zinc oxide thin film for efficient ethanol detection
Authors:
P. K. Shihabudeen,
Mina Yaghoobi Notash,
Jaber Jahanbin Sardroodi,
Ayan Roy Chaudhuri
Abstract:
Zinc oxide which is a n-type semiconducting metal oxide (SMO) has been a promising material for detecting ethanol vapor. However, pure ZnO based ethanol sensors often suffer from high working temperature, cross sensitivity towards methanol and poor stability against humidity. Do** ZnO with various metal ions has been widely explored as a proficient approach to improve its ethanol sensing propert…
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Zinc oxide which is a n-type semiconducting metal oxide (SMO) has been a promising material for detecting ethanol vapor. However, pure ZnO based ethanol sensors often suffer from high working temperature, cross sensitivity towards methanol and poor stability against humidity. Do** ZnO with various metal ions has been widely explored as a proficient approach to improve its ethanol sensing properties, while anionic dopants have been rarely considered. Here in we demonstrate the effect of nitrogen do** on the ethanol sensing characteristics of ZnO thin films. Nitrogen doped ZnO (N-ZnO) thin films have been synthesized following sol-gel technique with urea as nitrogen precursor. Ethanol sensing characteristics of the N-ZnO thin film has been com-pared with pure ZnO sensor over a wide range of temperature and relative humidity conditions. The N-ZnO sensor exhibits significantly large ethanol sensing response at a lower operating temperature (~99 % at 225 °C vs ~81 % at 250 °C for ZnO), faster response time (12 s vs 33 s for ZnO), long term stability, improved resilience against humidity and selectivity towards ethanol over methanol and acetone. The experimental observations have been supplemented by estimating the adsorption energies of ethanol on ZnO and N-ZnO surface using density functional theory (DFT) calculations. We discuss that the microscopic origin of improved ethanol sensing of N-ZnO is related to the facile adsorption of ethanol molecules on the oxide surface which is promoted by modification of electronic properties of ZnO by the nitrogen dopant atoms.
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Submitted 18 December, 2021;
originally announced December 2021.