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Compressive-Sensing-Enhanced First-Principles Calculation of Photoluminescence Spectra in Color Centers: A Comparison between Theory and Experiment for the G Center in Silicon
Authors:
Jiongzhi Zheng,
Lukasz Komza,
Yihuang Xiong,
Natalya Sheremetyeva,
Changpeng Lin,
Sinéad M. Griffin,
Alp Sipahigil,
Geoffroy Hautier
Abstract:
Photoluminescence (PL) spectra are a versatile tool for exploring the electronic and optical properties of quantum defect systems. In this work, we investigate the PL spectra of the G center in silicon by combining first-principles computations with a machine-learned compressive-sensing technique and experiment. We show that the compressive-sensing technique provides a speed up of approximately 20…
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Photoluminescence (PL) spectra are a versatile tool for exploring the electronic and optical properties of quantum defect systems. In this work, we investigate the PL spectra of the G center in silicon by combining first-principles computations with a machine-learned compressive-sensing technique and experiment. We show that the compressive-sensing technique provides a speed up of approximately 20 times compared with the finite-displacement method with similar numerical accuracy. We compare theory and experiment and show good agreement for the historically proposed configuration B of the G center. In particular, we attribute the experimentally observed E-line of the G center to a local vibration mode mainly involving two substitutional C atoms and one interstitial Si atom. Our theoretical results also well reproduce and explain the experimental E-line energy shifts originating from the carbon isotopic effect. In addition, our results demonstrate that some highly anharmonic modes that are apparent in computed spectra could be absent experimentally because of their short lifetime. Our work not only provides a deeper understanding of the G-center defect but also paves the way to accelerate the calculation of PL spectra for color centers.
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Submitted 16 February, 2024; v1 submitted 12 February, 2024;
originally announced February 2024.
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High-throughput identification of spin-photon interfaces in silicon
Authors:
Yihuang Xiong,
Céline Bourgois,
Natalya Sheremetyeva,
Wei Chen,
Diana Dahliah,
Hanbin Song,
Sinéad M. Griffin,
Alp Sipahigil,
Geoffroy Hautier
Abstract:
Color centers in host semiconductors are prime candidates for spin-photon interfaces that would enable numerous quantum applications. The discovery of an optimal spin-photon interface in silicon would move quantum information technologies towards a mature semiconductor technology. However, the space of possible charged defects in a host is very large, making the identification of promising quantum…
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Color centers in host semiconductors are prime candidates for spin-photon interfaces that would enable numerous quantum applications. The discovery of an optimal spin-photon interface in silicon would move quantum information technologies towards a mature semiconductor technology. However, the space of possible charged defects in a host is very large, making the identification of promising quantum defects from experiments only extremely challenging. Here, we use high-throughput first principles computational screening to identify spin-photon interfaces among more than 1000 substitutional and interstitial charged defects in silicon. We evaluate the most promising defects by considering their optical properties, spin multiplicity, and formation energies. The use of a single-shot hybrid functional approach is critical in enabling the screening of a large number of defects with a reasonable accuracy in the calculated optical and electronic properties. We identify three new promising spin-photon interface as potential bright emitters in the telecom band: $\rm Ti_{i}^{+}$, $\rm Fe_{i}^{0}$, and $\rm Ru_{i}^{0}$. These candidates are excited through defect-bound excitons, stressing the importance of considering these type of defects in silicon if operations in the telecom band is targeted. Our work paves the way to further large scale computational screening for quantum defects in silicon and other hosts.
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Submitted 2 March, 2023;
originally announced March 2023.
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Prediction of topological phases in metastable ferromagnetic MPX$_3$ monolayers
Authors:
Natalya Sheremetyeva,
Ilyoun Na,
Anay Saraf,
Sinéad M. Griffin,
Geoffroy Hautier
Abstract:
Density functional theory calculations are carried out to study the electronic and topological properties of $M$P$X_3$ ($M$ = Mn, Fe, Co, Ni, and $X$ = S, Se) monolayers in the ferromagnetic (FM) metastable magnetic state. We find that FM MnPSe$_3$ monolayers host topological semimetal signatures that are gapped out when spin-orbit coupling (SOC) is included. These findings are supported by explic…
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Density functional theory calculations are carried out to study the electronic and topological properties of $M$P$X_3$ ($M$ = Mn, Fe, Co, Ni, and $X$ = S, Se) monolayers in the ferromagnetic (FM) metastable magnetic state. We find that FM MnPSe$_3$ monolayers host topological semimetal signatures that are gapped out when spin-orbit coupling (SOC) is included. These findings are supported by explicit calculations of the Berry curvature and the Chern number. The choice of the Hubbard-$U$ parameter to describe the $d$-electrons is thoroughly discussed, as well as the influence of using a hybrid-functional approach. The presence of band inversions and the associated topological features are found to be formalism-dependent. Nevertheless, routes to achieve the topological phase via the application of external biaxial strain are demonstrated. Within the hybrid-functional picture, topological band structures are recovered under a pressure of 15% (17 GPa). The present work provides a potential avenue for uncovering new topological phases in metastable ferromagnetic phases.
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Submitted 7 December, 2022; v1 submitted 5 December, 2022;
originally announced December 2022.
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Low-frequency Raman signature of Ag-intercalated few-layer MoS$_2$
Authors:
Natalya Sheremetyeva,
Drake Niedzielski,
Damien Tristant,
Liangbo Liang,
Lauren E. Kerstetter,
Suzanne E. Mohney,
Vincent Meunier
Abstract:
Density functional theory based calculations and experimental analysis on a limited number of real samples are performed to study how the presence of silver intercalated in the van der Waals gap of few-layer MoS$_2$ affects the low-frequency Raman active modes of this material. Silver is found to predominantly affect the breathing-like and shear-like vibrational modes of MoS$_2$. These modes corre…
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Density functional theory based calculations and experimental analysis on a limited number of real samples are performed to study how the presence of silver intercalated in the van der Waals gap of few-layer MoS$_2$ affects the low-frequency Raman active modes of this material. Silver is found to predominantly affect the breathing-like and shear-like vibrational modes of MoS$_2$. These modes correspond to quasi-rigid movements of each individual layer with a restoring force (and, in turn, frequency) that is determined by modulations in the weak interlayer interactions. Noticeable red-shifts with increasing Ag concentration are found for all low-frequency modes. This finding indicates the potential for low-frequency vibrations as useful gauges for practical determination of silver concentration using low-frequency Raman spectroscopy. This work also describes a semi-classical linear chain model that allows to extrapolate results to a large number of layers. Further, first-principles calculations show how Raman spectroscopy can be used to characterize the quality of the two-dimensional interface between MoS$_2$ and a silver substrate.
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Submitted 23 December, 2021;
originally announced December 2021.
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Machine-learning models for Raman spectra analysis of twisted bilayer graphene
Authors:
Natalya Sheremetyeva,
Michael Lamparski,
Colin Daniels,
Benoit Van Troeye,
Vincent Meunier
Abstract:
The vibrational properties of twisted bilayer graphene (tBLG) show complex features, due to the intricate energy landscape of its low-symmetry configurations. A machine learning-based approach is developed to provide a continuous model between the twist angle and the simulated Raman spectra of tBLGs. Extracting the structural information of the twist angle from Raman spectra corresponds to solving…
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The vibrational properties of twisted bilayer graphene (tBLG) show complex features, due to the intricate energy landscape of its low-symmetry configurations. A machine learning-based approach is developed to provide a continuous model between the twist angle and the simulated Raman spectra of tBLGs. Extracting the structural information of the twist angle from Raman spectra corresponds to solving a complicated inverse problem. Once trained, the machine learning regressors (MLRs) quickly provide predictions without human bias and with an average of 98% of the data variance being explained by the model. The significant spectral features learned by MLRs are analyzed revealing the intensity profile near the calculated G-band to be the most important feature. The trained models are tested on noise-containing test data demonstrating their robustness. The transferability of the present models to experimental Raman spectra is discussed in the context of validation of the level of theory used for the construction of the analyzed database. This work serves as a proof of concept that machine-learning analysis is a potentially powerful tool for interpretation of Raman spectra of tBLG and other 2D materials.
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Submitted 7 July, 2020;
originally announced July 2020.