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Elastic scattering of Laguerre-Gaussian electron packets on atoms
Authors:
N. Sheremet,
A. Chaikovskaia,
D. Grosman,
D. Karlovets
Abstract:
We explore elastic scattering of non-relativistic electrons in the form of standard Laguerre-Gaussian (sLG) and elegant Laguerre - Gaussian (eLG) packets on atomic targets in the generalized Born approximation and compare these results to the reference with Bessel-Gaussian (BG) packets. Scattering by hydrogen-like, iron, silver, and golden targets is considered. The incident electron carries a non…
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We explore elastic scattering of non-relativistic electrons in the form of standard Laguerre-Gaussian (sLG) and elegant Laguerre - Gaussian (eLG) packets on atomic targets in the generalized Born approximation and compare these results to the reference with Bessel-Gaussian (BG) packets. Scattering by hydrogen-like, iron, silver, and golden targets is considered. The incident electron carries a nonzero orbital angular momentum, while sLG and eLG packets have a definite radial quantum number n as well. In scattering of sLG and eLG wave packets by a macroscopic target sensitivity of the average cross section to the orbital angular momentum is observed, which is absent for BG packets. We highlight the opportunity to employ the differences in the experimental scattering results for the revelation of the properties of incident twisted electron wave packets
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Submitted 17 April, 2024;
originally announced April 2024.
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Elastic scattering of Airy electron packets on atoms
Authors:
D. Grosman,
N. Sheremet,
I. Pavlov,
D. Karlovets
Abstract:
The problem of elastic scattering of electron Airy beams on potential fields is considered for a hydrogen atom in the ground state and for Yukawa potential. It is demonstrated that the angular dependence of the scattering probability density is in general azimuthally asymmetric. When the position of the atom happens to coincide with one the minima of the probability density of the Airy beam the as…
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The problem of elastic scattering of electron Airy beams on potential fields is considered for a hydrogen atom in the ground state and for Yukawa potential. It is demonstrated that the angular dependence of the scattering probability density is in general azimuthally asymmetric. When the position of the atom happens to coincide with one the minima of the probability density of the Airy beam the asymmetric pattern is represented by four separated peaks. We show that this behaviour is very sensitive to the precision with which the relative position of the atom and the minima is defined and study how uncertainty in the position measured in terms of the transverse size of the wave-packet affects observation of azimuthal asymmetry. Finally, we consider a spatially localized target and discuss the difficulties of observing the azimuthal asymmetry for targets with sizes that exceed the critical value determined by the beam parameters and the position of the target center.
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Submitted 5 March, 2023; v1 submitted 29 November, 2022;
originally announced November 2022.
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The features of contact resistivity behavior at helium temperatures for InP- and GaAs-based ohmic contacts
Authors:
A. V. Sachenko,
A. E. Belyaev,
N. S. Boltovets,
S. A. Vitusevich,
R. V. Konakova,
S. V. Novitskii,
V. N. Sheremet
Abstract:
Contact resistivity rc of InP and GaAs based ohmic contacts was measured in the 4.2/300 K temperature range. Nonmonotonic dependences rc(T), with a minimum at temperature 50 K (150 K) for InP (GaAs) based contacts were obtained. The results can be explained within the framework of the mechanism of current flow through metal shunts (associated with dislocations) penetrating into the semiconductor b…
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Contact resistivity rc of InP and GaAs based ohmic contacts was measured in the 4.2/300 K temperature range. Nonmonotonic dependences rc(T), with a minimum at temperature 50 K (150 K) for InP (GaAs) based contacts were obtained. The results can be explained within the framework of the mechanism of current flow through metal shunts (associated with dislocations) penetrating into the semiconductor bulk, with allowance being made for electron freeze-out at helium temperatures. Contact ohmicity in the 4.2/30K temperature range is due to accumulation band bending near shunt ends at the metal/semiconductor interface.
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Submitted 8 January, 2014;
originally announced January 2014.
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Temperature dependence of contact resistance of Au-Ti-Pd2Si-n+-Si ohmic contacts
Authors:
A. E. Belyaev,
N. S. Boltovets,
R. V. Konakova,
Ya. Ya. Kudryk,
A. V. Sachenko,
V. N. Sheremet
Abstract:
We investigated temperature dependence of contact resistance of an Au-Ti-Pd2Si ohmic contact to heavily doped n+-Si. The contact resistance increases with temperature owing to conduction through the metal shunts. In this case, the limiting process is diffusion input of electrons to the metal shunts. The proposed mechanism of contact resistance formation seems to realize also in the case of wide-ga…
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We investigated temperature dependence of contact resistance of an Au-Ti-Pd2Si ohmic contact to heavily doped n+-Si. The contact resistance increases with temperature owing to conduction through the metal shunts. In this case, the limiting process is diffusion input of electrons to the metal shunts. The proposed mechanism of contact resistance formation seems to realize also in the case of wide-gap semiconductors with high concentration of surface states and dislocation density in the contact.
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Submitted 6 April, 2011;
originally announced April 2011.
