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Electrothermal Transport Induced Material Re Configuration and Performance Degradation of CVD Grown Monolayer MoS2 Transistors
Authors:
Ansh,
Jeevesh Kumar,
Gaurav Sheoran,
Mayank Shrivastava
Abstract:
We report, for CVD-grown monolayer MoS2, the very first results on temporal degradation of material and device performance under electrical stress. Both low and high field regimes of operation are explored at different temperatures, gate bias and stress cycles. During low field operation, current is found to saturate after hundreds of seconds of operation with the current decay time constant being…
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We report, for CVD-grown monolayer MoS2, the very first results on temporal degradation of material and device performance under electrical stress. Both low and high field regimes of operation are explored at different temperatures, gate bias and stress cycles. During low field operation, current is found to saturate after hundreds of seconds of operation with the current decay time constant being a function of temperature and stress cycle. Current saturation after several seconds during low field operation occurs when a thermal equilibrium is established. However, high field operation, especially at low temperature, leads to impact ionization assisted material and device degradation. It is found that high field operation at low temperature results in amorphization of the channel and is verified by device and Kelvin Probe Force Microscopy (KPFM) analyses. In general, a prolonged room temperature operation of CVD-grown MoS2 transistors lead to degraded gate control, higher OFF state current and negative shift in threshold voltage (VT). This is further verified, through micro-Raman and Photoluminescence spectroscopy, which suggest that a steady state DC electrical stress leads to the formation of localized low resistance regions in the channel and a subsequent loss of transistor characteristics. Our findings unveil unique mechanism by which CVD MoS2 undergoes material degradation under electrical stress and subsequent breakdown of transistor behavior. Such an understanding of material and device reliability helps in determining the safe operating regime from device as well as circuit perspective.
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Submitted 30 June, 2020;
originally announced June 2020.
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Early Detection of Cancerous Tissues in Human Breast utilizing Near field Microwave Holography
Authors:
Vineeta Kumari,
Aijaz Ahmed,
Tirupathiraju Kanumuri,
Chandra Shakher,
Gyanendra Sheoran
Abstract:
This work demonstrates an application of near field indirect microwave holography for the detection of malignant tissues in the human breast in an effective way. The holograms are recorded by two directive antennas aligned along each other's boresight while performing a raster scan over a 2D plane utilizing XY-linear motorized translation stage and a uniform reference wave. The whole information i…
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This work demonstrates an application of near field indirect microwave holography for the detection of malignant tissues in the human breast in an effective way. The holograms are recorded by two directive antennas aligned along each other's boresight while performing a raster scan over a 2D plane utilizing XY-linear motorized translation stage and a uniform reference wave. The whole information i.e. amplitude and phase of an object has been provided by indirect holography at microwave frequencies. The extracted phase values are used to determine the dielectric permittivity values which are further utilized for the identification and validating the positions of malignant tissues in the breast phantom. The experimental evaluations performed on the in-house designed and developed tissue mimicking 3D printed breast phantoms. The experimental results demonstrate the ability of microwave holography using directive antennas in locating and identifying the tumors up to the minimum size of 4mm and a maximum depth of 25mm in fabricated phantom. The preliminary results present the potential of the Near Field Indirect Holographic Imaging (NFIHI) in order to develop an efficient and economical tool for breast cancer detection.
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Submitted 22 April, 2019;
originally announced April 2019.
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SAR Analysis of Directive Antenna on Anatomically Real Breast Phantoms for Microwave Holography
Authors:
Vineeta Kumari,
Gyanendra Sheoran,
Tirupathiraju Kanumuri
Abstract:
Microwave imaging is emerging as a promising substitution diagnostic tool, for breast cancer detection. It has ignited the interest in the interaction of the microwaves with biological tissues and their respective effects on the human body which requires the investigation of safety issues on human health under the exposure of antenna's microwave radiation. In this work a specifically designed dire…
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Microwave imaging is emerging as a promising substitution diagnostic tool, for breast cancer detection. It has ignited the interest in the interaction of the microwaves with biological tissues and their respective effects on the human body which requires the investigation of safety issues on human health under the exposure of antenna's microwave radiation. In this work a specifically designed directive and ultra-wideband antenna is developed for microwave holographic system. A detailed simulation analysis of Specific Absorption Rate (SAR) and temperature variation due to the radiation exposure of the designed antenna on self-designed anatomically real breast phantoms and Computer Simulation Technology (CST) voxel breast models are done in CST environment. Thereafter, the antenna and anatomical phantom are fabricated for the experimental verification of the simulation analysis of SAR. It is found that the SAR due to the radiation of the designed antenna lies in the permissible limit and the variation in temperature is only 0.096%. Hence, the antenna can be used in microwave holography for breast cancer detection.
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Submitted 22 May, 2019; v1 submitted 11 March, 2019;
originally announced March 2019.
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Indirect Microwave Holography with Resolution Enhancement in Metallic Imaging
Authors:
Vineeta Kumari,
Aijaz Ahmed,
Gyanendra Sheoran,
Tirupathiraju Kanumuri,
Chandra shakher
Abstract:
The development of compact indirect microwave holographic set-up by the implementation of low cost, specifically designed directive antennae as transmitter and receiver is proposed. Microwave holograms are recorded by 2D scanning over a plane using motorized translation stage. The recorded interference pattern i.e. holograms are then processed numerically to reconstruct the amplitude and phase inf…
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The development of compact indirect microwave holographic set-up by the implementation of low cost, specifically designed directive antennae as transmitter and receiver is proposed. Microwave holograms are recorded by 2D scanning over a plane using motorized translation stage. The recorded interference pattern i.e. holograms are then processed numerically to reconstruct the amplitude and phase information employing the angular spectrum diffraction method. The quality of the reconstructed amplitude image is further enhanced through the deep neural network, in order to combat with the low resolution of reconstructed images. The qualitative experimental results exploit the possibility of develo** the miniaturized, and low cost indirect microwave holographic system for near field applications.
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Submitted 21 November, 2019; v1 submitted 13 February, 2019;
originally announced February 2019.
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Chalcogen Assisted Enhanced Atomic Orbital Interaction at TMDs - Metal Interface & Chalcogen Passivation of TMD Channel For Overall Performance Boost of 2D TMD FETs
Authors:
Ansh,
Jeevesh Kumar,
Gaurav Sheoran,
Harsha B. Variar,
Ravi K. Mishra,
Hemanjaneyulu Kuruva,
Adil Meersha,
Abhishek Mishra,
Srinivasan Raghavan,
Mayank Shrivastava
Abstract:
Metal-semiconductor interface is a bottleneck for efficient transport of charge carriers through Transition Metal Dichalcogenide (TMD) based field-effect transistors (FETs). Injection of charge carriers across such interfaces is mostly limited by Schottky barrier at the contacts which must be reduced to achieve highly efficient contacts for carrier injection into the channel. Here we introduce a u…
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Metal-semiconductor interface is a bottleneck for efficient transport of charge carriers through Transition Metal Dichalcogenide (TMD) based field-effect transistors (FETs). Injection of charge carriers across such interfaces is mostly limited by Schottky barrier at the contacts which must be reduced to achieve highly efficient contacts for carrier injection into the channel. Here we introduce a universal approach involving dry chemistry to enhance atomic orbital interaction between various TMDs (MoS2, WS2, MoSe2 and WSe2) & metal contacts has been experimentally demonstrated. Quantum chemistry between TMDs, Chalcogens and metals has been explored using detailed atomistic (DFT & NEGF) simulations, which is then verified using Raman, PL and XPS investigations. Atomistic investigations revealed lower contact resistance due to enhanced orbital interaction and unique physics of charge sharing between constituent atoms in TMDs with introduced Chalcogen atoms which is subsequently validated through experiments. Besides contact engineering, which lowered contact resistance by 72, 86, 1.8, 13 times in MoS2, WS2, MoSe2 and WSe2 respectively, a novel approach to cure / passivate dangling bonds present at the 2D TMD channel surface has been demonstrated. While the contact engineering improved the ON-state performance (ION, gm, mobility and RON) of 2D TMD FETs by orders of magnitude, Chalcogen based channel passivation was found to improve gate control (IOFF, SS, & VTH) significantly. This resulted in an overall performance boost. The engineered TMD FETs were shown to have performance on par with best reported till date.
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Submitted 7 January, 2019;
originally announced January 2019.
