Spatially controlled fabrication of single NV centers in IIa HPHT diamond
Authors:
S. D. Trofimov,
S. A. Tarelkin,
S. V. Bolshedvorskii,
V. S. Bormashov,
S. Yu. Troshchiev,
A. V. Golovanov,
N. V. Luparev,
D. D. Prikhodko,
K. N. Boldyrev,
S. A. Terentiev,
A. V. Akimov,
N. I. Kargin,
N. S. Kukin,
A. S. Gusev,
A. A. Shemukhin,
Yu. V. Balakshin,
S. G. Buga,
V. D. Blank
Abstract:
Single NV centers in HPHT IIa diamond are fabricated by helium implantation through lithographic masks. The concentrations of created NV centers in different growth sectors of HPHT are compared quantitatively. It is shown that the purest {001} growth sector (GS) of HPHT diamond allows to create groups of single NV centers in predetermined locations. The {001} GS HPHT diamond is thus considered a g…
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Single NV centers in HPHT IIa diamond are fabricated by helium implantation through lithographic masks. The concentrations of created NV centers in different growth sectors of HPHT are compared quantitatively. It is shown that the purest {001} growth sector (GS) of HPHT diamond allows to create groups of single NV centers in predetermined locations. The {001} GS HPHT diamond is thus considered a good material for applications that involve single NV centers.
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Submitted 4 December, 2019; v1 submitted 27 November, 2019;
originally announced November 2019.
