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Investigation of n-type dilute magnetic semiconductor property observed in amorphous AlNO alloy thin film incorporated with dilute nitrogen at 300K
Authors:
Deena Nath,
U. P. Deshpande,
N. V. Chandra Shekar,
Sujay Chakravarty
Abstract:
In the present work, a thin film was deposited on quartz substrate by reactive RF magnetron sputtering of high purity (99.999%) aluminium target using ultra-high pure (Ar + N2) gas mixture. The percentage ratio of Ar and N2 in the gas mixture was 95% and 5%, respectively. Chemical characterization using x-ray photoelectron spectroscopy (XPS) and energy-dispersive xray (EDX) spectroscopy reveals th…
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In the present work, a thin film was deposited on quartz substrate by reactive RF magnetron sputtering of high purity (99.999%) aluminium target using ultra-high pure (Ar + N2) gas mixture. The percentage ratio of Ar and N2 in the gas mixture was 95% and 5%, respectively. Chemical characterization using x-ray photoelectron spectroscopy (XPS) and energy-dispersive xray (EDX) spectroscopy reveals that in the presence of dilute nitrogen, Al prefers to react with residual oxygen to form Al2O3 while the nitrogen is incorporated in it. The stoichiometry of bulk film is Al2N0.38O3.1. Magnetic and electrical properties measurement shows that the film exhibits ntype dilute magnetic semiconductor (DMS) property at 300K. The film has low electrical resistivity of 6.3 Ω-cm and high carrier mobility of 5.7*106 cm2V-1s-1 at 300K. A density functional theory (DFT) calculation was performed to investigate the origin of observed magnetism in the film. From first-principles calculation based on DFT, it is found that for thermodynamic stability dilute nitrogen incorporated in Al2O3 preferred to sit at the interstitial site, which is responsible for observed magnetic property. Present study reported here provides a new insight to prepare rarely observed n-type DMS at room temperature by incorporating nitrogen interstitials in Al2O3, which is desirable for potential application in the field of spintronics.
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Submitted 16 October, 2020;
originally announced October 2020.
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Pressure Induced Metallization of BaMn2As2
Authors:
A. T. Satya,
Awadhesh Mani,
A. Arulraj,
N. V. Chandra Shekar,
K. Vinod,
C. S. Sundar,
A. Bharathi
Abstract:
The temperature and pressure dependent electrical resistivity rho(T,P) studies have been performed on BaMn2As2 single crystal in the 4.2 to 300 K range upto of 8.2 GPa to investigate the evolution of its ground state properties. The rho(T) shows a negative co-efficient of resistivity under pressure upto 3.2 GPa. The occurrence of an insulator to metal transition (MIT) in an external P ~4.5 GPa is…
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The temperature and pressure dependent electrical resistivity rho(T,P) studies have been performed on BaMn2As2 single crystal in the 4.2 to 300 K range upto of 8.2 GPa to investigate the evolution of its ground state properties. The rho(T) shows a negative co-efficient of resistivity under pressure upto 3.2 GPa. The occurrence of an insulator to metal transition (MIT) in an external P ~4.5 GPa is indicated by a change in the temperature co-efficient in the rho(T) data at ~36 K . However complete metallization in entire temperature range is seen at a P~5.8 GPa. High pressure XRD studies carried out at room temperature also shows an anomaly in the pressure versus volume curve around P ~ 5 GPa, without a change in crystal structure, indicative of an electronic transition. Further, a clear precipitous drop in rho(T) at ~17 K is seen for P ~5.8 GPa which suggests the possibility of the system going over to a superconducting ground state.
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Submitted 19 November, 2011; v1 submitted 22 October, 2011;
originally announced October 2011.
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An Automated Laboratory Laser Heating Arrangement for Materials Synthesis at High Temperatures and High Pressures
Authors:
N. Subramanian,
Mrithula Ummru,
R. Bindu,
N. R. Sanjay Kumar,
M. Sekar,
N. V. Chandra Shekar,
P. Ch. Sahu
Abstract:
This paper describes the automation of a laser heating arrangement for synthesizing and studying materials at high pressures (up to ~ 1 Mbar) and high temperatures (up to ~ 5000 K). In this arrangement, a diamond anvil high-pressure cell (DAC) containing a microscopic sample of typical diameter ~50-100 micrometer, is mounted on a precision X-Y nanomotor stage that forms part of an IR laser heati…
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This paper describes the automation of a laser heating arrangement for synthesizing and studying materials at high pressures (up to ~ 1 Mbar) and high temperatures (up to ~ 5000 K). In this arrangement, a diamond anvil high-pressure cell (DAC) containing a microscopic sample of typical diameter ~50-100 micrometer, is mounted on a precision X-Y nanomotor stage that forms part of an IR laser heating optical assembly. Automation of this stage has been accomplished using a LabVIEW virtual instrument program to manipulate the X and Y stages using nanopositioning systems. This has a major feature of enabling a rastered heating of the sample over a user-defined circular area, without any operator intervention in addition to a virtual joystick to position the sample with respect to the laser spot. This auto-rastering feature has the advantage of offering uniform exposure of a circular area of the sample to the incident heating laser beam apart from drastic reduction in scan time compared to a manual scan. The diameter of the circle can be varied from a maximum of ~24 mm down to the focal spot size of the laser (~few micrometers), enabling thereby usage of the laser heating arrangement for heating microscopic samples under high-pressure in a DAC, as well as bulk samples at atmospheric pressure. Examples for both macro and micro scale automated laser-heating experiments have been presented. In particular, at the micro scale, auto-raster heated carbon samples at ~ 17 GPa and ~2000 K showed excellent signatures of diamond formation compared to manually raster heated samples, highlighting the unique advantage of auto-raster heating.
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Submitted 8 May, 2008;
originally announced May 2008.
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Soft modes and NTE in Zn(CN)2 from Raman spectroscopy and first principles calculations
Authors:
T. R. Ravindran,
A. K. Arora,
Sharat Chandra,
M. C. Valsakumar,
N. V. Chandra Shekar
Abstract:
We have studied Zn(CN)2 at high pressure using Raman spectroscopy, and report Gruneisen parameters of the soft phonons. The phonon frequencies and eigen vectors obtained from ab-initio calculations are used for the assignment of the observed phonon spectra. Out of the eleven zone-centre optical modes, six modes exhibit negative Gruneisen parameter. The calculations suggest that the soft phonons…
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We have studied Zn(CN)2 at high pressure using Raman spectroscopy, and report Gruneisen parameters of the soft phonons. The phonon frequencies and eigen vectors obtained from ab-initio calculations are used for the assignment of the observed phonon spectra. Out of the eleven zone-centre optical modes, six modes exhibit negative Gruneisen parameter. The calculations suggest that the soft phonons correspond to the librational and translational modes of CN rigid unit, with librational modes contributing more to thermal expansion. A rapid disordering of the lattice is found above 1.6 GPa from X-ray diffraction.
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Submitted 2 April, 2007;
originally announced April 2007.
