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Band alignment of grafted monocrystalline Si (001)/$β$-Ga$_2$O$_3$ (010) p-n heterojunction determined by X-ray photoelectron spectroscopy
Authors:
Jiarui Gong,
Jie Zhou,
Ashok Dheenan,
Moheb Sheikhi,
Fikadu Alema,
Tien Khee Ng,
Shubhra S. Pasayat,
Qiaoqiang Gan,
Andrei Osinsky,
Vincent Gambin,
Chirag Gupta,
Siddharth Rajan,
Boon S. Ooi,
Zhenqiang Ma
Abstract:
Beta-phase gallium oxide ($β$-Ga$_2$O$_3$) research has gained accelerated pace due to its superiorly large bandgap and commercial availability of large-diameter native substrates. However, the high acceptor activation energy obstructs the development of homojunction bipolar devices employing $β$-Ga$_2$O$_3$. The recently demonstrated semiconductor grafting technique provides an alternative and vi…
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Beta-phase gallium oxide ($β$-Ga$_2$O$_3$) research has gained accelerated pace due to its superiorly large bandgap and commercial availability of large-diameter native substrates. However, the high acceptor activation energy obstructs the development of homojunction bipolar devices employing $β$-Ga$_2$O$_3$. The recently demonstrated semiconductor grafting technique provides an alternative and viable approach towards lattice-mismatched $β$-Ga$_2$O$_3$-based p-n heterojunctions with high quality interfaces. Understanding and quantitatively characterizing the band alignment of the grafted heterojunctions is crucial for future bipolar device development employing the grafting method. In this work, we present a systematic study of the band alignment in the grafted monocrystalline Si/$β$-Ga$_2$O$_3$ heterostructure by employing X-ray photoelectron spectroscopy (XPS). The core level peaks and valence band spectra of the Si, $β$-Ga$_2$O$_3$, and the grafted heterojunction were carefully obtained and analyzed. The band diagrams of the Si/$β$-Ga$_2$O$_3$ heterostructure were constructed using two individual methods, the core level peak method and the valence band spectrum method, by utilizing the different portions of the measured data. The reconstructed band alignments of the Si/$β$-Ga$_2$O$_3$ heterostructure using the two different methods are identical within the error range. The band alignment is also consistent with the prediction from the electron affinity values of Si and $β$-Ga$_2$O$_3$. The study suggests that the interface defect density in grafted Si/$β$-Ga$_2$O$_3$ heterostructure is at a sufficiently low level such that Fermi level pinning at the interface has been completely avoided and the universal electron affinity rule can be safely employed to construct the band diagrams of grafted monocrystalline Si/$β$-Ga$_2$O$_3$ heterostructures.
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Submitted 1 December, 2023;
originally announced December 2023.
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Demonstration of a monocrystalline GaAs-$β$-Ga$_2$O$_3$ p-n heterojunction
Authors:
Jie Zhou,
Moheb Sheikhi,
Ashok Dheenan,
Haris Abbasi,
Jiarui Gong,
Yang Liu,
Carolina Adamo,
Patrick Marshall,
Nathan Wriedt,
Clincy Cheung,
Shuoyang Qiu,
Tien Khee Ng,
Qiaoqiang Gan,
Vincent Gambin,
Boon S. Ooi,
Siddharth Rajan,
Zhenqiang Ma
Abstract:
In this work, we report the fabrication and characterizations of a monocrystalline GaAs/$β$-Ga$_2$O$_3$ p-n heterojunction by employing semiconductor grafting technology. The heterojunction was created by lifting off and transfer printing a p-type GaAs single crystal nanomembrane to an Al$_2$O$_3$-coated n-type$β$-Ga$_2$O$_3$ epitaxial substrate. The resultant heterojunction diodes exhibit remarka…
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In this work, we report the fabrication and characterizations of a monocrystalline GaAs/$β$-Ga$_2$O$_3$ p-n heterojunction by employing semiconductor grafting technology. The heterojunction was created by lifting off and transfer printing a p-type GaAs single crystal nanomembrane to an Al$_2$O$_3$-coated n-type$β$-Ga$_2$O$_3$ epitaxial substrate. The resultant heterojunction diodes exhibit remarkable performance metrics, including an ideality factor of 1.23, a high rectification ratio of 8.04E9 at +/- 4V, and a turn on voltage of 2.35 V. Furthermore, at +5 V, the diode displays a large current density of 2500 A/cm$^2$ along with a low ON resistance of 2 m$Ω\cdot$cm$^2$.
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Submitted 5 October, 2023;
originally announced October 2023.
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Initial demonstration of AlGaAs-GaAsP-beta-Ga2O3 n-p-n double heterojunctions
Authors:
Jie Zhou,
Ashok Dheenan,
Jiarui Gong,
Carolina Adamo,
Patrick Marshall,
Moheb Sheikhi,
Tsung-Han Tsai,
Nathan Wriedt,
Clincy Cheung,
Shuoyang Qiu,
Tien Khee Ng,
Qiaoqiang Gan,
Gambin Vincent,
Boon S. Ooi,
Siddharth Rajan,
Zhenqiang Ma
Abstract:
Beta phase gallium oxides, an ultrawide-bandgap semiconductor, has great potential for future power and RF electronics applications but faces challenges in bipolar device applications due to the lack of p-type dopants. In this work, we demonstrate monocrystalline AlGaAs_GaAsP_beta phase gallium oxides n-p-n double-heterojunctions, synthesized using semiconductor grafting technology. By transfer pr…
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Beta phase gallium oxides, an ultrawide-bandgap semiconductor, has great potential for future power and RF electronics applications but faces challenges in bipolar device applications due to the lack of p-type dopants. In this work, we demonstrate monocrystalline AlGaAs_GaAsP_beta phase gallium oxides n-p-n double-heterojunctions, synthesized using semiconductor grafting technology. By transfer printing an n-AlGaAs_p-GaAsP nanomembrane to the n-beta phase-Ga$_2$O$_3$ epitaxial substrate, we simultaneously achieved AlGaAs_GaAsP epitaxial n-p junction diode with an ideality factor of 1.29 and a rectification ratio of 2.57E3 at +/- 2 V, and grafted GaAsP_beta_phase_gallium oxides p-n junction diode exhibiting an ideality factor of 1.36 and a rectification ratio of 4.85E2 at +/- 2 V.
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Submitted 14 August, 2023; v1 submitted 12 August, 2023;
originally announced August 2023.
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Security Vulnerability of FDD Massive MIMO Systems in Downlink Training Phase
Authors:
Mohammad Amin Sheikhi,
S. Mohammad Razavizadeh
Abstract:
We consider downlink channel training of a frequency division duplex (FDD) massive multiple-input-multiple-output (MIMO) system when a multi-antenna jammer is present in the network. The jammer intends to degrade mean square error (MSE) of the downlink channel training by designing an attack based on second-order statistics of its channel. The channels are assumed to be spatially correlated. First…
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We consider downlink channel training of a frequency division duplex (FDD) massive multiple-input-multiple-output (MIMO) system when a multi-antenna jammer is present in the network. The jammer intends to degrade mean square error (MSE) of the downlink channel training by designing an attack based on second-order statistics of its channel. The channels are assumed to be spatially correlated. First, a closed-form expression for the channel estimation MSE is derived and then the jammer determines the conditions under which the MSE is maximized. Numerical results demonstrate that the proposed jamming can severely increase the estimation MSE even if the optimal training signals with a large number of pilot symbols are used by the legitimate system.
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Submitted 9 December, 2018;
originally announced December 2018.
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Structural and Magnetic Study of Metallo-Organic YIG Powder Using 2-ethylhexanoate Carboxylate Based Precursors
Authors:
S. Hosseinzadeh,
P. Elahi,
M. Behboudni,
M. H. Sheikhi,
S. M. Mohseni
Abstract:
The crystallization and magnetic behavior of yttrium iron garnet (YIG) prepared by metallo-organic decomposition (MOD) method are discussed. The chemistry and physics related to synthesis of iron and yttrium carboxylates based on 2-ethylhexanoic acid (2EHA) are studied, since no literature was found which elucidates synthesis of metallo-organic precursor of YIG in spite of the literatures of doped…
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The crystallization and magnetic behavior of yttrium iron garnet (YIG) prepared by metallo-organic decomposition (MOD) method are discussed. The chemistry and physics related to synthesis of iron and yttrium carboxylates based on 2-ethylhexanoic acid (2EHA) are studied, since no literature was found which elucidates synthesis of metallo-organic precursor of YIG in spite of the literatures of doped YIG samples such as Bi-YIG. Typically, the metal carboxylates used in preparation of ceramic oxide materials are 2-ethylhexanoate (2EH) solvents. Herein, the synthesis, thermal behavior and solubility of yttrium and iron 2EH used in synthesis of YIG powder by MOD are reported. The crystallization and magnetic parameters, including saturation magnetization and coercivity of these samples, smoothly change as a function of the annealing temperature. It is observed that high sintering temperature of 1300 to 1400 °C promotes the diffraction peaks of YIG, therefore, we can conclude that the formation of YIG in MOD method increases the crystallization temperature. The maximum value of saturation magnetization and minimum value of coercivity and remanence are observed for the sample sintered at 1200°C which are 13.7 emu/g, 10.38 Oe and 1.5 emu/g, respectively. This study cites the drawbacks in chemical synthesis of metallo-organic based YIG production.
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Submitted 29 November, 2018;
originally announced November 2018.
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High Saturation Magnetization, Low Coercivity and Fine YIG Nanoparticles Prepared by Modifying Co-Precipitation Method
Authors:
S. Hosseinzadeh,
M. Behboudnia,
L. Jamilpanah,
M. H. Sheikhi,
E. Mohajerani,
K. Tian,
A. Tiwari,
P. Elahi,
S. M. Mohseni
Abstract:
Nanoparticles with their specific properties newly have drawn a great deal of attention of researchers [1-3]Yttrium iron Garnet magnetic nanoparticles (YIG-NPs) are promising materials with novel applications in microwave, spintronics, magnonics, and magneto-optical devices. However, achieving stable and remarkable magnetic YIG-NPs has been remaining as a great challenge. In this paper, synthesize…
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Nanoparticles with their specific properties newly have drawn a great deal of attention of researchers [1-3]Yttrium iron Garnet magnetic nanoparticles (YIG-NPs) are promising materials with novel applications in microwave, spintronics, magnonics, and magneto-optical devices. However, achieving stable and remarkable magnetic YIG-NPs has been remaining as a great challenge. In this paper, synthesized YIG-NPs by modifying co-precipitation (MCP) method is reported. Structural and magnetic properties of final products are compared to those of the materials prepared by citrate-nitrate (CN) method. Smaller crystals and particle size have been found by MCP method comparing to that of synthesized by CN method. Using a relatively low annealing temperatures for both sets of samples (~700 °C), the final YIG samples prepared by MCP method show more structural purity than those made by CN method. Higher saturation magnetization (Ms) and lower coercivity (Hc) are observed in MCP YIG sample (23.23 emu/g 36 and 30.1 Oe) than the CN prepared YIG sample (16.43 emu/g and 44.95 Oe). The Curie temperature is measured to be 569 °C for the MCP YIG sample determined from set of Ms measurement at different temperatures ranging from 80-600 K. These findings lead to significant improvement in quality of synthesized (synthetic methods) of YIG-NPs.
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Submitted 29 November, 2018;
originally announced November 2018.
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Optical Properties of Chiral Graphene Nanoribbons: a First Principal Study
Authors:
M. Berahman,
M. Asad,
M. H. Sheikhi
Abstract:
In this paper, optical properties of Chiral Graphene Nanoribbons both in longitude and transverse polarization have been studied using density functional theory calculation. It has been shown that the selection rule which have been reported before for Armchair and Zigzag Graphene Nanoribbons are no longer valid due to breaking symmetry on these new categorize of graphene nanoribbons. However, stil…
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In this paper, optical properties of Chiral Graphene Nanoribbons both in longitude and transverse polarization have been studied using density functional theory calculation. It has been shown that the selection rule which have been reported before for Armchair and Zigzag Graphene Nanoribbons are no longer valid due to breaking symmetry on these new categorize of graphene nanoribbons. However, still the edge states play a critical role in optical absorption. It have been illustrated that depending on the polarization of incident beam the absorption peaks are different while it is spread in the same energy range. It is also suggested that the absorption of light is sensitive to the chiral vector on the edges and direction of the light polarization. Due to breaking symmetry in chiral graphene nanoribbons, absorption peak is changed and it would be around 1000nm, introducing a new potential of graphene nanoribbons for optoelectronic devices.
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Submitted 19 May, 2012;
originally announced May 2012.